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Technische Details IXTT140P10T IXYS
Description: MOSFET P-CH 100V 140A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 140A (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 70A, 10V, Power Dissipation (Max): 568W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-268AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 31400 pF @ 25 V.
Weitere Produktangebote IXTT140P10T nach Preis ab 20.33 EUR bis 37.08 EUR
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IXTT140P10T | Hersteller : IXYS |
 Description: MOSFET P-CH 100V 140A TO268Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 70A, 10V Power Dissipation (Max): 568W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-268AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 31400 pF @ 25 V |
auf Bestellung 1864 Stücke: Lieferzeit 10-14 Tag (e) |
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