| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXTQ36N30P | IXYS |
Description: MOSFET N-CH 300V 36A TO3PPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: TO-3P Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V |
auf Bestellung 304 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN360N10T | IXYS |
Description: MOSFET N-CH 100V 360A SOT-227BPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 360A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 180A, 10V Power Dissipation (Max): 830W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: SOT-227B Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 505 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 36000 pF @ 25 V |
auf Bestellung 772 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFP18N65X2M | IXYS |
Description: MOSFET N-CH 650V 18A TO220Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 10V Power Dissipation (Max): 290W (Tc) Vgs(th) (Max) @ Id: 5V @ 1.5mA Supplier Device Package: TO-220 Isolated Tab Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFA18N65X2 | IXYS |
Description: MOSFET N-CH 650V 18A TO263Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 10V Power Dissipation (Max): 290W (Tc) Vgs(th) (Max) @ Id: 5V @ 1.5mA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFH18N65X2 | IXYS |
Description: MOSFET N-CH 650V 18A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 10V Power Dissipation (Max): 290W (Tc) Vgs(th) (Max) @ Id: 5V @ 1.5mA Supplier Device Package: TO-247 (IXTH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXTH60N20L2 | IXYS |
Description: MOSFET N-CH 200V 60A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 10V Power Dissipation (Max): 540W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247 (IXTH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTQ60N20T | IXYS |
Description: MOSFET N-CH 200V 60A TO3PPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 10V Power Dissipation (Max): 500W (Ta) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3P Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4530 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXTA60N20T-TRL | IXYS |
Description: MOSFET N-CH 200V 60A TO263Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4530 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXTH110N10L2 | IXYS |
Description: MOSFET N-CH 100V 110A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 500mA, 10V Power Dissipation (Max): 600W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247 (IXTH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V |
auf Bestellung 1950 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH110N10P | IXYS |
Description: MOSFET N-CH 100V 110A TO247ADPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 500mA, 10V Power Dissipation (Max): 480W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-247AD (IXFH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXTT110N10L2-TRL | IXYS |
Description: MOSFET N-CH 100V 110A TO268Packaging: Tape & Reel (TR) Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 55A, 10V Power Dissipation (Max): 600W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-268 (IXTT) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXTT110N10L2-TRL | IXYS |
Description: MOSFET N-CH 100V 110A TO268Packaging: Cut Tape (CT) Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 55A, 10V Power Dissipation (Max): 600W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-268 (IXTT) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXFB60N80P | IXYS |
Description: MOSFET N-CH 800V 60A PLUS264Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 30A, 10V Power Dissipation (Max): 1250W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: PLUS264™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXFK32N80P | IXYS |
Description: MOSFET N-CH 800V 32A TO264AAPackaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 16A, 10V Power Dissipation (Max): 830W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: TO-264AA (IXFK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA10N80P-TRL | IXYS |
Description: MOSFET N-CH 800V 10A TO263Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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MCNA220PD2200YB | IXYS |
Description: SCR MODULE 2.2KV 345A Y4-M6Packaging: Box Package / Case: Y4-M6 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 140°C (TJ) Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 7200A, 7780A Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 220 A Voltage - Gate Trigger (Vgt) (Max): 2 V Current - On State (It (RMS)) (Max): 345 A Voltage - Off State: 2.2 kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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MCNA40PD2200TB | IXYS |
Description: SCR MODULE 2.2KV 63A TO-240AAPackaging: Box Package / Case: TO-240AA Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 140°C (TJ) Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 100 mA Current - Gate Trigger (Igt) (Max): 70 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 500A, 540A Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 40 A Voltage - Gate Trigger (Vgt) (Max): 1.4 V Current - On State (It (RMS)) (Max): 63 A Voltage - Off State: 2.2 kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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MCNA55PD2200TB | IXYS |
Description: SCR MODULE 2.2KV 86A TO-240AAPackaging: Box Package / Case: TO-240AA Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 140°C (TJ) Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 95 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1000A, 1080A Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 55 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Current - On State (It (RMS)) (Max): 86 A Voltage - Off State: 2.2 kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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MCNA75PD2200TB | IXYS |
Description: SCR MODULE 2.2KV 118A TO-240AAPackaging: Box Package / Case: TO-240AA Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 140°C (TJ) Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 95 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1400A, 1510A Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 75 A Voltage - Gate Trigger (Vgt) (Max): 1.4 V Current - On State (It (RMS)) (Max): 118 A Voltage - Off State: 2.2 kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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MCNA95PD2200TB | IXYS |
Description: SCR MODULE 2.2KV 149A TO-240AAPackaging: Box Package / Case: TO-240AA Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 140°C (TJ) Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1700A, 1840A Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 95 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Current - On State (It (RMS)) (Max): 149 A Voltage - Off State: 2.2 kV |
auf Bestellung 72 Stücke: Lieferzeit 10-14 Tag (e) |
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MCNA650PD2200CB | IXYS |
Description: SCR MODULE 2.2KV 1200A COMPACKPackaging: Box Package / Case: ComPack Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 140°C (TJ) Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 300 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 16000A, 17300A Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 650 A Voltage - Gate Trigger (Vgt) (Max): 2 V Current - On State (It (RMS)) (Max): 1200 A Voltage - Off State: 2.2 kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXKH70N60C5 | IXYS |
Description: MOSFET N-CH 600V 70A TO247ADPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V Vgs(th) (Max) @ Id: 3.5V @ 3mA Supplier Device Package: TO-247AD Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXTA80N10T-TRL | IXYS |
Description: MOSFET N-CH 100V 80A TO263Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXTA180N10T7-TRL | IXYS |
Description: MOSFET N-CH 100V 180A TO263-7Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V Power Dissipation (Max): 480W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263-7 (IXTA) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXFA180N10T2-TRL | IXYS |
Description: MOSFET N-CH 100V 180A TO263Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V Power Dissipation (Max): 480W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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GUO40-12NO1 | IXYS |
Bridge Rectifiers 40 Amps 1200V |
auf Bestellung 1860 Stücke: Lieferzeit 10-14 Tag (e) |
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FBE22-06N1 | IXYS |
Bridge Rectifiers RECTIFIER BRIDGE ISOPLUS i4-PAC |
auf Bestellung 513 Stücke: Lieferzeit 10-14 Tag (e) |
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VUO190-08NO7 | IXYS |
Bridge Rectifiers 190 Amps 800V |
auf Bestellung 22 Stücke: Lieferzeit 10-14 Tag (e) |
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VUB72-16NOXT | IXYS |
Bridge Rectifiers Standard Rectifier Bridge+Brake Unit |
auf Bestellung 38 Stücke: Lieferzeit 10-14 Tag (e) |
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VUO160-08NO7 | IXYS |
Bridge Rectifiers 160 Amps 800V |
auf Bestellung 40 Stücke: Lieferzeit 10-14 Tag (e) |
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GBO25-12NO1 | IXYS |
Bridge Rectifiers 25 Amps 1600V |
auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) |
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VUO190-12NO7 | IXYS |
Bridge Rectifiers 190 Amps 1200V |
auf Bestellung 123 Stücke: Lieferzeit 10-14 Tag (e) |
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VUE75-06NO7 | IXYS |
Bridge Rectifiers 75 Amps 600V |
auf Bestellung 1496 Stücke: Lieferzeit 10-14 Tag (e) |
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VBE100-06NO7 | IXYS |
Bridge Rectifiers 100 Amps 600V |
auf Bestellung 49 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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VUO86-16NO7 | IXYS |
Bridge Rectifiers 3 PHS REC BRDG 1600V, 86A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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FUO50-16N | IXYS |
Bridge Rectifiers 50 Amps 1600V |
auf Bestellung 202 Stücke: Lieferzeit 10-14 Tag (e) |
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VBE60-06A | IXYS |
Bridge Rectifiers 60 Amps 600V |
auf Bestellung 540 Stücke: Lieferzeit 10-14 Tag (e) |
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VUO35-12NO7 | IXYS |
Bridge Rectifiers 35 Amps 1200V |
auf Bestellung 30 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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VUO121-16NO1 | IXYS |
Bridge Rectifiers 121 Amps 1600V |
auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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VUO34-18NO1 | IXYS |
Bridge Rectifiers 34 Amps 1800V |
auf Bestellung 109 Stücke: Lieferzeit 10-14 Tag (e) |
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VUB72-12NOXT | IXYS |
Bridge Rectifiers Standard Rectifier Bridge+Brake Unit |
auf Bestellung 11 Stücke: Lieferzeit 10-14 Tag (e) |
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VUO110-16NO7 | IXYS |
Bridge Rectifiers 110 Amps 1600V |
auf Bestellung 18 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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FBS16-06SC | IXYS |
Bridge Rectifiers 16 Amps 600V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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VUE130-12NO7 | IXYS |
Bridge Rectifiers 130 Amps 1200V |
auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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VBO125-12NO7 | IXYS |
Bridge Rectifiers 125 Amps 1200V |
auf Bestellung 49 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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VUM33-06PH | IXYS |
Bridge Rectifiers Power MOSFET Stage for Boost Converters |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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VUO28-12NO7 | IXYS |
Bridge Rectifiers 28 Amps 1200V |
auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
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MCMA120UJ1800ED | IXYS |
SCR Modules Thyristor Module |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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VBO20-12NO2 | IXYS |
Bridge Rectifiers 20 Amps 1200V |
auf Bestellung 26 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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VUO105-12NO7 | IXYS |
Bridge Rectifiers 105 Amps 1200V |
auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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VBO22-16NO8 | IXYS |
Bridge Rectifiers 22 Amps 1600V |
auf Bestellung 43 Stücke: Lieferzeit 10-14 Tag (e) |
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VBO105-16NO7 | IXYS |
Bridge Rectifiers 105 Amps 1600V |
auf Bestellung 19 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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MCMA260PD1600YB | IXYS |
SCR Modules Thyristor/Diode Module |
auf Bestellung 13 Stücke: Lieferzeit 10-14 Tag (e) |
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VUO120-12NO2T | IXYS |
Bridge Rectifiers 3 Phase Rectifier Bridge w/ NTC |
auf Bestellung 12 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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VUO55-16NO7 | IXYS |
Bridge Rectifiers 55 Amps 1600V |
auf Bestellung 29 Stücke: Lieferzeit 10-14 Tag (e) |
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VBO13-12AO2 | IXYS |
Bridge Rectifiers 13 Amps 1200V |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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VUO36-16NO8 | IXYS |
Bridge Rectifiers 36 Amps 1600V |
auf Bestellung 1379 Stücke: Lieferzeit 10-14 Tag (e) |
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VUI72-16NOXT | IXYS |
Bridge Rectifiers Standard Rectifier Bridge+Brake Unit |
auf Bestellung 15 Stücke: Lieferzeit 10-14 Tag (e) |
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VUO52-16NO1 | IXYS |
Bridge Rectifiers 52 Amps 1600V |
auf Bestellung 71 Stücke: Lieferzeit 10-14 Tag (e) |
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VBE55-06NO7 | IXYS |
Bridge Rectifiers 68 Amps 600V |
auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXTQ36N30P |
![]() |
Hersteller: IXYS
Description: MOSFET N-CH 300V 36A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
Description: MOSFET N-CH 300V 36A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
auf Bestellung 304 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 9.4 EUR |
| 30+ | 5.35 EUR |
| 120+ | 4.46 EUR |
| IXFN360N10T |
![]() |
Hersteller: IXYS
Description: MOSFET N-CH 100V 360A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 180A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 505 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 36000 pF @ 25 V
Description: MOSFET N-CH 100V 360A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 180A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 505 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 36000 pF @ 25 V
auf Bestellung 772 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 42.63 EUR |
| 10+ | 31.18 EUR |
| 100+ | 26.5 EUR |
| IXFP18N65X2M |
![]() |
Hersteller: IXYS
Description: MOSFET N-CH 650V 18A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-220 Isolated Tab
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 25 V
Description: MOSFET N-CH 650V 18A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-220 Isolated Tab
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFA18N65X2 |
![]() |
Hersteller: IXYS
Description: MOSFET N-CH 650V 18A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 25 V
Description: MOSFET N-CH 650V 18A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFH18N65X2 |
![]() |
Hersteller: IXYS
Description: MOSFET N-CH 650V 18A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 25 V
Description: MOSFET N-CH 650V 18A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTH60N20L2 |
![]() |
Hersteller: IXYS
Description: MOSFET N-CH 200V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
Description: MOSFET N-CH 200V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 30.15 EUR |
| 30+ | 18.97 EUR |
| 120+ | 17.08 EUR |
| IXTQ60N20T |
![]() |
Hersteller: IXYS
Description: MOSFET N-CH 200V 60A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 10V
Power Dissipation (Max): 500W (Ta)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4530 pF @ 25 V
Description: MOSFET N-CH 200V 60A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 10V
Power Dissipation (Max): 500W (Ta)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4530 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTA60N20T-TRL |
![]() |
Hersteller: IXYS
Description: MOSFET N-CH 200V 60A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4530 pF @ 25 V
Description: MOSFET N-CH 200V 60A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4530 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTH110N10L2 |
![]() |
Hersteller: IXYS
Description: MOSFET N-CH 100V 110A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 500mA, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
Description: MOSFET N-CH 100V 110A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 500mA, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
auf Bestellung 1950 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 30.15 EUR |
| 30+ | 18.97 EUR |
| 120+ | 17.08 EUR |
| IXFH110N10P |
![]() |
Hersteller: IXYS
Description: MOSFET N-CH 100V 110A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 500mA, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 25 V
Description: MOSFET N-CH 100V 110A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 500mA, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTT110N10L2-TRL |
![]() |
Hersteller: IXYS
Description: MOSFET N-CH 100V 110A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 55A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268 (IXTT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
Description: MOSFET N-CH 100V 110A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 55A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268 (IXTT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTT110N10L2-TRL |
![]() |
Hersteller: IXYS
Description: MOSFET N-CH 100V 110A TO268
Packaging: Cut Tape (CT)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 55A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268 (IXTT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
Description: MOSFET N-CH 100V 110A TO268
Packaging: Cut Tape (CT)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 55A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268 (IXTT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFB60N80P |
![]() |
Hersteller: IXYS
Description: MOSFET N-CH 800V 60A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 30A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS264™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V
Description: MOSFET N-CH 800V 60A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 30A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS264™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFK32N80P |
![]() |
Hersteller: IXYS
Description: MOSFET N-CH 800V 32A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 16A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V
Description: MOSFET N-CH 800V 32A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 16A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 26.17 EUR |
| 25+ | 16.61 EUR |
| 100+ | 14.34 EUR |
| IXFA10N80P-TRL |
![]() |
Hersteller: IXYS
Description: MOSFET N-CH 800V 10A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
Description: MOSFET N-CH 800V 10A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCNA220PD2200YB |
![]() |
Hersteller: IXYS
Description: SCR MODULE 2.2KV 345A Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7200A, 7780A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 220 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 345 A
Voltage - Off State: 2.2 kV
Description: SCR MODULE 2.2KV 345A Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7200A, 7780A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 220 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 345 A
Voltage - Off State: 2.2 kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCNA40PD2200TB |
![]() |
Hersteller: IXYS
Description: SCR MODULE 2.2KV 63A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 70 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 500A, 540A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 40 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 63 A
Voltage - Off State: 2.2 kV
Description: SCR MODULE 2.2KV 63A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 70 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 500A, 540A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 40 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 63 A
Voltage - Off State: 2.2 kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCNA55PD2200TB |
![]() |
Hersteller: IXYS
Description: SCR MODULE 2.2KV 86A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1000A, 1080A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 55 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 86 A
Voltage - Off State: 2.2 kV
Description: SCR MODULE 2.2KV 86A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1000A, 1080A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 55 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 86 A
Voltage - Off State: 2.2 kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCNA75PD2200TB |
![]() |
Hersteller: IXYS
Description: SCR MODULE 2.2KV 118A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1400A, 1510A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 75 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 118 A
Voltage - Off State: 2.2 kV
Description: SCR MODULE 2.2KV 118A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1400A, 1510A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 75 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 118 A
Voltage - Off State: 2.2 kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCNA95PD2200TB |
![]() |
Hersteller: IXYS
Description: SCR MODULE 2.2KV 149A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1700A, 1840A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 95 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 149 A
Voltage - Off State: 2.2 kV
Description: SCR MODULE 2.2KV 149A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1700A, 1840A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 95 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 149 A
Voltage - Off State: 2.2 kV
auf Bestellung 72 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 36+ | 54.47 EUR |
| MCNA650PD2200CB |
![]() |
Hersteller: IXYS
Description: SCR MODULE 2.2KV 1200A COMPACK
Packaging: Box
Package / Case: ComPack
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16000A, 17300A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 650 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 1200 A
Voltage - Off State: 2.2 kV
Description: SCR MODULE 2.2KV 1200A COMPACK
Packaging: Box
Package / Case: ComPack
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16000A, 17300A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 650 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 1200 A
Voltage - Off State: 2.2 kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXKH70N60C5 |
![]() |
Hersteller: IXYS
Description: MOSFET N-CH 600V 70A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
Description: MOSFET N-CH 600V 70A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTA80N10T-TRL |
![]() |
Hersteller: IXYS
Description: MOSFET N-CH 100V 80A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 25 V
Description: MOSFET N-CH 100V 80A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTA180N10T7-TRL |
![]() |
Hersteller: IXYS
Description: MOSFET N-CH 100V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Description: MOSFET N-CH 100V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFA180N10T2-TRL |
![]() |
Hersteller: IXYS
Description: MOSFET N-CH 100V 180A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
Description: MOSFET N-CH 100V 180A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GUO40-12NO1 |
![]() |
Hersteller: IXYS
Bridge Rectifiers 40 Amps 1200V
Bridge Rectifiers 40 Amps 1200V
auf Bestellung 1860 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 27.3 EUR |
| 10+ | 24.11 EUR |
| FBE22-06N1 |
![]() |
Hersteller: IXYS
Bridge Rectifiers RECTIFIER BRIDGE ISOPLUS i4-PAC
Bridge Rectifiers RECTIFIER BRIDGE ISOPLUS i4-PAC
auf Bestellung 513 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 23.07 EUR |
| 10+ | 22.7 EUR |
| 25+ | 18.43 EUR |
| VUO190-08NO7 |
![]() |
Hersteller: IXYS
Bridge Rectifiers 190 Amps 800V
Bridge Rectifiers 190 Amps 800V
auf Bestellung 22 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 122.69 EUR |
| 10+ | 115.23 EUR |
| 25+ | 111.97 EUR |
| 50+ | 111.11 EUR |
| 100+ | 107.01 EUR |
| VUB72-16NOXT |
![]() |
Hersteller: IXYS
Bridge Rectifiers Standard Rectifier Bridge+Brake Unit
Bridge Rectifiers Standard Rectifier Bridge+Brake Unit
auf Bestellung 38 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 83.78 EUR |
| 10+ | 75.4 EUR |
| 24+ | 69.48 EUR |
| 48+ | 67.83 EUR |
| 120+ | 60.24 EUR |
| VUO160-08NO7 |
![]() |
Hersteller: IXYS
Bridge Rectifiers 160 Amps 800V
Bridge Rectifiers 160 Amps 800V
auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 89.5 EUR |
| 10+ | 79.69 EUR |
| GBO25-12NO1 |
![]() |
Hersteller: IXYS
Bridge Rectifiers 25 Amps 1600V
Bridge Rectifiers 25 Amps 1600V
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 21.28 EUR |
| 10+ | 14.29 EUR |
| 25+ | 13.76 EUR |
| 112+ | 12.06 EUR |
| VUO190-12NO7 |
![]() |
Hersteller: IXYS
Bridge Rectifiers 190 Amps 1200V
Bridge Rectifiers 190 Amps 1200V
auf Bestellung 123 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 128.8 EUR |
| 10+ | 123.24 EUR |
| 25+ | 120.01 EUR |
| 50+ | 115.93 EUR |
| 100+ | 105.34 EUR |
| 250+ | 104.91 EUR |
| VUE75-06NO7 |
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Hersteller: IXYS
Bridge Rectifiers 75 Amps 600V
Bridge Rectifiers 75 Amps 600V
auf Bestellung 1496 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 32.21 EUR |
| 10+ | 21.33 EUR |
| 100+ | 20.96 EUR |
| VBE100-06NO7 |
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Hersteller: IXYS
Bridge Rectifiers 100 Amps 600V
Bridge Rectifiers 100 Amps 600V
auf Bestellung 49 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| VUO86-16NO7 |
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Hersteller: IXYS
Bridge Rectifiers 3 PHS REC BRDG 1600V, 86A
Bridge Rectifiers 3 PHS REC BRDG 1600V, 86A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FUO50-16N |
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Hersteller: IXYS
Bridge Rectifiers 50 Amps 1600V
Bridge Rectifiers 50 Amps 1600V
auf Bestellung 202 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 36.19 EUR |
| 10+ | 35.29 EUR |
| 25+ | 25.03 EUR |
| 100+ | 24.78 EUR |
| VBE60-06A |
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Hersteller: IXYS
Bridge Rectifiers 60 Amps 600V
Bridge Rectifiers 60 Amps 600V
auf Bestellung 540 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 49.63 EUR |
| 10+ | 38.61 EUR |
| VUO35-12NO7 |
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Hersteller: IXYS
Bridge Rectifiers 35 Amps 1200V
Bridge Rectifiers 35 Amps 1200V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| VUO121-16NO1 |
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Hersteller: IXYS
Bridge Rectifiers 121 Amps 1600V
Bridge Rectifiers 121 Amps 1600V
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 118.73 EUR |
| 12+ | 90.59 EUR |
| VUO34-18NO1 |
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Hersteller: IXYS
Bridge Rectifiers 34 Amps 1800V
Bridge Rectifiers 34 Amps 1800V
auf Bestellung 109 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 53.24 EUR |
| 10+ | 38.44 EUR |
| VUB72-12NOXT |
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Hersteller: IXYS
Bridge Rectifiers Standard Rectifier Bridge+Brake Unit
Bridge Rectifiers Standard Rectifier Bridge+Brake Unit
auf Bestellung 11 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 74.92 EUR |
| 10+ | 69.91 EUR |
| 24+ | 62.9 EUR |
| 48+ | 61.72 EUR |
| VUO110-16NO7 |
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Hersteller: IXYS
Bridge Rectifiers 110 Amps 1600V
Bridge Rectifiers 110 Amps 1600V
auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| FBS16-06SC |
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Hersteller: IXYS
Bridge Rectifiers 16 Amps 600V
Bridge Rectifiers 16 Amps 600V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| VUE130-12NO7 |
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Hersteller: IXYS
Bridge Rectifiers 130 Amps 1200V
Bridge Rectifiers 130 Amps 1200V
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 68.06 EUR |
| 10+ | 59.12 EUR |
| 100+ | 53.38 EUR |
| VBO125-12NO7 |
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Hersteller: IXYS
Bridge Rectifiers 125 Amps 1200V
Bridge Rectifiers 125 Amps 1200V
auf Bestellung 49 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| VUM33-06PH |
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Hersteller: IXYS
Bridge Rectifiers Power MOSFET Stage for Boost Converters
Bridge Rectifiers Power MOSFET Stage for Boost Converters
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 108.59 EUR |
| 10+ | 83.9 EUR |
| 20+ | 83.74 EUR |
| VUO28-12NO7 |
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Hersteller: IXYS
Bridge Rectifiers 28 Amps 1200V
Bridge Rectifiers 28 Amps 1200V
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 29.13 EUR |
| 10+ | 18.41 EUR |
| 100+ | 17.48 EUR |
| MCMA120UJ1800ED |
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Hersteller: IXYS
SCR Modules Thyristor Module
SCR Modules Thyristor Module
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 142.44 EUR |
| 12+ | 114.58 EUR |
| VBO20-12NO2 |
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Hersteller: IXYS
Bridge Rectifiers 20 Amps 1200V
Bridge Rectifiers 20 Amps 1200V
auf Bestellung 26 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| VUO105-12NO7 |
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Hersteller: IXYS
Bridge Rectifiers 105 Amps 1200V
Bridge Rectifiers 105 Amps 1200V
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| VBO22-16NO8 |
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Hersteller: IXYS
Bridge Rectifiers 22 Amps 1600V
Bridge Rectifiers 22 Amps 1600V
auf Bestellung 43 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 23.55 EUR |
| 10+ | 13.68 EUR |
| 100+ | 13.66 EUR |
| VBO105-16NO7 |
![]() |
Hersteller: IXYS
Bridge Rectifiers 105 Amps 1600V
Bridge Rectifiers 105 Amps 1600V
auf Bestellung 19 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| MCMA260PD1600YB |
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Hersteller: IXYS
SCR Modules Thyristor/Diode Module
SCR Modules Thyristor/Diode Module
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 143 EUR |
| 12+ | 138.95 EUR |
| VUO120-12NO2T |
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Hersteller: IXYS
Bridge Rectifiers 3 Phase Rectifier Bridge w/ NTC
Bridge Rectifiers 3 Phase Rectifier Bridge w/ NTC
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| VUO55-16NO7 |
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Hersteller: IXYS
Bridge Rectifiers 55 Amps 1600V
Bridge Rectifiers 55 Amps 1600V
auf Bestellung 29 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 73.99 EUR |
| 10+ | 69.03 EUR |
| 30+ | 67.58 EUR |
| 100+ | 64.49 EUR |
| VBO13-12AO2 |
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Hersteller: IXYS
Bridge Rectifiers 13 Amps 1200V
Bridge Rectifiers 13 Amps 1200V
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| VUO36-16NO8 |
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Hersteller: IXYS
Bridge Rectifiers 36 Amps 1600V
Bridge Rectifiers 36 Amps 1600V
auf Bestellung 1379 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 27.83 EUR |
| 10+ | 27.28 EUR |
| 50+ | 16.65 EUR |
| 100+ | 16.63 EUR |
| VUI72-16NOXT |
![]() |
Hersteller: IXYS
Bridge Rectifiers Standard Rectifier Bridge+Brake Unit
Bridge Rectifiers Standard Rectifier Bridge+Brake Unit
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 72.99 EUR |
| 24+ | 59.45 EUR |
| VUO52-16NO1 |
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Hersteller: IXYS
Bridge Rectifiers 52 Amps 1600V
Bridge Rectifiers 52 Amps 1600V
auf Bestellung 71 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 46.27 EUR |
| 10+ | 45.25 EUR |
| 24+ | 41.2 EUR |
| 120+ | 40.34 EUR |
| VBE55-06NO7 |
![]() |
Hersteller: IXYS
Bridge Rectifiers 68 Amps 600V
Bridge Rectifiers 68 Amps 600V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 34.23 EUR |
| 10+ | 31.47 EUR |



































