IXBK64N250 IXYS
Hersteller: IXYS
Description: IGBT 2500V 75A TO-264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 64A
Supplier Device Package: TO-264AA
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Power - Max: 735 W
Description: IGBT 2500V 75A TO-264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 64A
Supplier Device Package: TO-264AA
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Power - Max: 735 W
auf Bestellung 285 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 224.42 EUR |
| 25+ | 198.89 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXBK64N250 IXYS
Category: THT IGBT transistors, Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 64A; 735W; TO264, Mounting: THT, Power dissipation: 735W, Kind of package: tube, Features of semiconductor devices: high voltage, Gate charge: 400nC, Technology: BiMOSFET™; FRED, Case: TO264, Collector-emitter voltage: 2.5kV, Gate-emitter voltage: ±25V, Collector current: 64A, Pulsed collector current: 600A, Turn-on time: 632ns, Turn-off time: 397ns, Type of transistor: IGBT, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IXBK64N250 nach Preis ab 243.85 EUR bis 243.85 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
|---|---|---|---|---|---|---|---|---|---|
 |
IXBK64N250 | Hersteller : IXYS |
 IGBTs BIMOSFET 2500V 75A |
auf Bestellung 41 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||
 |
IXBK64N250 | Hersteller : Littelfuse |
Trans IGBT Chip N-CH 2500V 156A 735000mW 3-Pin(3+Tab) TO-264 |
Produkt ist nicht verfügbar |
|||||
 |
IXBK64N250 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 64A; 735W; TO264 Mounting: THT Power dissipation: 735W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 400nC Technology: BiMOSFET™; FRED Case: TO264 Collector-emitter voltage: 2.5kV Gate-emitter voltage: ±25V Collector current: 64A Pulsed collector current: 600A Turn-on time: 632ns Turn-off time: 397ns Type of transistor: IGBT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||
|
|
IXBK64N250 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 64A; 735W; TO264 Mounting: THT Power dissipation: 735W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 400nC Technology: BiMOSFET™; FRED Case: TO264 Collector-emitter voltage: 2.5kV Gate-emitter voltage: ±25V Collector current: 64A Pulsed collector current: 600A Turn-on time: 632ns Turn-off time: 397ns Type of transistor: IGBT |
Produkt ist nicht verfügbar |