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IXSA60N65L2-7TR IXSA60N65L2-7TR IXYS power-semiconductor-sic-mosfet-ixsa60n65l2-7tr-datasheet?assetguid=13dbac17-813e-4c03-8ede-0725d4259010 Description: 650V 40M (80A @ 25C) SIC MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 18V
Power Dissipation (Max): 249W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 7.5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 94.7 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 600 V
auf Bestellung 880 Stücke:
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IXSH60N65L2KHV IXSH60N65L2KHV IXYS Littlefuse_7-24-2025_Power_Semiconductor_SiC_MOSFET_IXSH60N65L2KHV_Datasheet.pdf Description: 650V 40M (40A @ 25C) SIC MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 18V
Power Dissipation (Max): 249W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 7.5mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 94.7 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 600 V
auf Bestellung 100 Stücke:
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IXTP36N30P IXTP36N30P IXYS littelfuse-discrete-mosfets-ixt-36n30p-datasheet?assetguid=bf954b1e-fc82-433f-b03c-f41721f34fc0 Description: MOSFET N-CH 300V 36A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
auf Bestellung 308 Stücke:
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IXFH30N50Q3 IXFH30N50Q3 IXYS littelfuse-discrete-mosfets-ixf-30n50q3-datasheet?assetguid=5b0b5bfa-14d1-4221-a3ae-274cbbd7b5ae Description: MOSFET N-CH 500V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V
Power Dissipation (Max): 690W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
auf Bestellung 48 Stücke:
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IXFH30N50P IXFH30N50P IXYS 99414.pdf Description: MOSFET N-CH 500V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
auf Bestellung 188 Stücke:
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IXFK140N30P IXFK140N30P IXYS DS99557FIXFKFX140N30P.pdf Description: MOSFET N-CH 300V 140A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 70A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14800 pF @ 25 V
auf Bestellung 541 Stücke:
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IXTA1N120P IXTA1N120P IXYS IXTA1N120P%2C%20IXTP1N120P.pdf Description: MOSFET N-CH 1200V 1A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 17.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
auf Bestellung 1728 Stücke:
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100+4.47 EUR
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IXTH96P085T IXTH96P085T IXYS littelfuse-discrete-mosfets-ixt-96p085t-datasheet?assetguid=961f5f5c-1ad9-4e7d-b8e3-2e5ee68588a7 Description: MOSFET P-CH 85V 96A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 500mA, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
auf Bestellung 2449 Stücke:
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IXTH68P20T IXTH68P20T IXYS DS100370AIXTHT68P20T.pdf Description: MOSFET P-CH 200V 68A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 34A, 10V
Power Dissipation (Max): 568W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 33400 pF @ 25 V
auf Bestellung 660 Stücke:
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IXFP72N30X3 IXFP72N30X3 IXYS littelfuse-discrete-mosfets-ixf-72n30x3-datasheet?assetguid=095debe6-6813-4074-9f25-63bb3df15119 Description: MOSFET N-CH 300V 72A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 36A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
auf Bestellung 2450 Stücke:
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IXTT11P50 IXTT11P50 IXYS IXTx11P50_Rev2005.pdf Description: MOSFET P-CH 500V 11A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
auf Bestellung 504 Stücke:
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IXFN210N30X3 IXFN210N30X3 IXYS littelfuse-discrete-mosfets-ixfn210n30x3-datasheet?assetguid=e87aeb6d-7459-4c92-990b-ae67617ef900 Description: MOSFET N-CH 300V 210A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 105A, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24200 pF @ 25 V
auf Bestellung 190 Stücke:
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IXTP10P50P IXTP10P50P IXYS littelfuse-discrete-mosfets-ixt-10p50p-datasheet?assetguid=02d9f7f4-854a-4f4b-b3f3-dc66c452f634 Description: MOSFET P-CH 500V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
auf Bestellung 432 Stücke:
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50+6.48 EUR
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IXTP01N100D IXTP01N100D IXYS littelfuse-discrete-mosfets-ixt-01n100d-datasheet?assetguid=90f68c0c-66ed-4288-bfb0-3c2769323c27 Description: MOSFET N-CH 1000V 400MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 80Ohm @ 50mA, 0V
Power Dissipation (Max): 1.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
auf Bestellung 45 Stücke:
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IXTH200N10T IXTH200N10T IXYS DS99654AIXTHTQ200N10T.pdf Description: MOSFET N-CH 100V 200A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 550W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
auf Bestellung 5528 Stücke:
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IXTX200N10L2 IXTX200N10L2 IXYS DS100239IXTKTX200N10L2.pdf Description: MOSFET N-CH 100V 200A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 540 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
auf Bestellung 218 Stücke:
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IXTQ52P10P IXTQ52P10P IXYS Littelfuse-Discrete-MOSFETs-P-Channel-IXT-52P10P-Datasheet.PDF?assetguid=B047FBE5-952B-40C8-BFA0-176E9733DB4B Description: MOSFET P-CH 100V 52A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 52A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2845 pF @ 25 V
auf Bestellung 1615 Stücke:
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IXTQ170N10P IXTQ170N10P IXYS littelfuse-discrete-mosfets-ixt-170n10p-datasheet?assetguid=175ebd9e-7358-496e-8ac0-7b03e2fb1949 Description: MOSFET N-CH 100V 170A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 500mA, 10V
Power Dissipation (Max): 715W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
auf Bestellung 520 Stücke:
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IXTH75N10L2 IXTH75N10L2 IXYS littelfuse-discrete-mosfets-ixt-75n10-datasheet?assetguid=ea051e16-aaa9-4983-a975-8d0c07325d72 Description: MOSFET N-CH 100V 75A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 500mA, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 25 V
auf Bestellung 2390 Stücke:
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IXTH12N70X2 IXTH12N70X2 IXYS ixty2n65x2.pdf Description: MOSFET N-CH 700V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 25 V
Produkt ist nicht verfügbar
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IXTP12N70X2 IXTP12N70X2 IXYS ixty2n65x2.pdf Description: MOSFET N-CH 700V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 25 V
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IXTP12N70X2M IXTP12N70X2M IXYS ixty2n65x2.pdf Description: MOSFET N-CH 700V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 25 V
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IXFN82N60P IXFN82N60P IXYS DS99559FIXFN82N60P.pdf description Description: MOSFET N-CH 600V 72A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 41A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
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DE150-102N02A DE150-102N02A IXYS Description: RF MOSFET DE150
Packaging: Tube
Package / Case: 6-SMD, Flat Lead Exposed Pad
Current Rating (Amps): 2A
Configuration: N-Channel
Power - Output: 200W
Technology: MOSFET (Metal Oxide)
Supplier Device Package: DE150
Voltage - Rated: 1000 V
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DE150-501N04A DE150-501N04A IXYS Description: RF MOSFET DE150
Packaging: Tube
Package / Case: 6-SMD, Flat Lead Exposed Pad
Current Rating (Amps): 4.5A
Configuration: N-Channel
Power - Output: 200W
Technology: MOSFET (Metal Oxide)
Supplier Device Package: DE150
Voltage - Rated: 500 V
Current - Test: 25 µA
Produkt ist nicht verfügbar
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IXTY01N100D IXTY01N100D IXYS littelfuse-discrete-mosfets-ixt-01n100d-datasheet?assetguid=90f68c0c-66ed-4288-bfb0-3c2769323c27 Description: MOSFET N-CH 1000V 400MA TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 80Ohm @ 50mA, 0V
Power Dissipation (Max): 1.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
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IXFN64N60P IXFN64N60P IXYS 99443.pdf description Description: MOSFET N-CH 600V 50A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 96mOhm @ 500mA, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
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IRFP264 IRFP264 IXYS IRFP264.pdf Description: MOSFET N-CH 250V 38A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 23A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
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IXYA20N65C3D1 IXYA20N65C3D1 IXYS media?resourcetype=datasheets&itemid=240AF429-77F9-404E-8BCC-BC19E7D8DE31&filename=Littelfuse-Discrete-IGBTs-XPT-IXY-20N65C3D1-Datasheet.PDF Description: IGBT 650V 50A TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 19ns/80ns
Switching Energy: 430µJ (on), 650µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 30 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 200 W
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IXFH50N50P3 IXFH50N50P3 IXYS littelfuse-discrete-mosfets-ixf-50n50p3-datasheet?assetguid=9f18c4f6-a40a-4871-ba8b-9eaf25daedcd Description: MOSFET N-CH 500V 50A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 25A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4335 pF @ 25 V
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IXFH46N30T IXFH46N30T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_46n30t_datasheet.pdf?assetguid=b3489569-af05-4180-9a6f-ffb53d321d7d Description: MOSFET N-CH 300V 46A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 23A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4770 pF @ 25 V
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IXTK150N15P IXTK150N15P IXYS media?resourcetype=datasheets&itemid=B47B8961-166C-42F8-9EC8-E2A693E15E6F&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXT-150N15P-Datasheet.PDF Description: MOSFET N-CH 150V 150A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 500mA, 10V
Power Dissipation (Max): 714W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
Produkt ist nicht verfügbar
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IXTY18P10T IXTY18P10T IXYS littelfuse-discrete-mosfets-ixt-18p10t-datasheet?assetguid=5c1b0780-b7a9-4cdb-8b92-3cdd987c0682 Description: MOSFET P-CH 100V 18A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 9A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 2581 Stücke:
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IXTP32P05T IXTP32P05T IXYS littelfuse-discrete-mosfets-ixt-32p05t-datasheet?assetguid=fa53f3f7-709e-4044-816c-ad0434045c15 Description: MOSFET P-CH 50V 32A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 500mA, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 25 V
auf Bestellung 2866 Stücke:
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LPBC31 LPBC31 IXYS ld-ls-datasheet?assetguid=15cfd786-1944-4fd3-b50e-f49d84e28d73 Description: CONN TERM BLK COVER CLEAR 1POS
Packaging: Box
Color: Clear
For Use With/Related Products: POWR-BLOKS® LD and LS Series
Number of Positions: 1
Type: Cover
Produkt ist nicht verfügbar
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LPBC32 IXYS ld-ls-datasheet?assetguid=15cfd786-1944-4fd3-b50e-f49d84e28d73 Description: CONN TERM BLK COVER CLEAR 2POS
Packaging: Box
Color: Clear
For Use With/Related Products: POWR-BLOKS® LD and LS Series
Number of Positions: 2
Type: Cover
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LPBC41 IXYS ld-ls-datasheet?assetguid=15cfd786-1944-4fd3-b50e-f49d84e28d73 Description: CONN TERM BLK COVER CLEAR 1POS
Packaging: Box
Color: Clear
For Use With/Related Products: POWR-BLOKS® LD and LS Series
Number of Positions: 1
Type: Cover
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LPBC02 LPBC02 IXYS ld-ls-datasheet?assetguid=15cfd786-1944-4fd3-b50e-f49d84e28d73 Description: CONN TERM BLK COVER CLEAR 2POS
Packaging: Box
Color: Clear
For Use With/Related Products: POWR-BLOKS® LD and LS Series
Number of Positions: 2
Type: Cover
Produkt ist nicht verfügbar
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IXD0579MTR IXD0579MTR IXYS ixd0579m-datasheet?assetguid=37ec1db7-6cff-4a49-bb31-4a6570087eff Description: HALF-BRIDGE DRIVER 100V 1A TDFN-
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 6.5V ~ 18V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 100 V
Supplier Device Package: 10-TDFN (3x3)
Rise / Fall Time (Typ): 19ns, 15ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.5A, 2.5A
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IXD0579MTR IXD0579MTR IXYS ixd0579m-datasheet?assetguid=37ec1db7-6cff-4a49-bb31-4a6570087eff Description: HALF-BRIDGE DRIVER 100V 1A TDFN-
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 6.5V ~ 18V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 100 V
Supplier Device Package: 10-TDFN (3x3)
Rise / Fall Time (Typ): 19ns, 15ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.5A, 2.5A
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IXTA80N10T IXTA80N10T IXYS IXTA80N10T.pdf Description: MOSFET N-CH 100V 80A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 25 V
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IXKH35N60C5 IXKH35N60C5 IXYS IXKH35N60C5.pdf Description: MOSFET N-CH 600V 35A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 1.2mA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
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IXTP28P065T IXTP28P065T IXYS littelfuse-discrete-mosfets-ixt-28p065t-datasheet?assetguid=cc1f3fbc-381e-4c61-a84b-94c3193be3b7 Description: MOSFET P-CH 65V 28A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 14A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
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IXTY14N60X2 IXTY14N60X2 IXYS ixty2n65x2.pdf Description: MOSFET N-CH 600V 14A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V
auf Bestellung 1923 Stücke:
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70+4.51 EUR
140+4.13 EUR
560+3.55 EUR
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IXFA14N60P-TRL IXFA14N60P-TRL IXYS littelfuse-discrete-mosfets-ixf-14n60p-datasheet?assetguid=9b66dd8c-b998-4e01-b450-afadebd1db30 Description: MOSFET N-CH 600V 14A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 7A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
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IXFX520N075T2 IXFX520N075T2 IXYS Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXF-520N075T2-Datasheet.PDF?assetguid=90615EDF-C082-4159-945F-6CE8C6ED0F56 Description: MOSFET N-CH 75V 520A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 520A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 100A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 41000 pF @ 25 V
auf Bestellung 354 Stücke:
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IXTK60N50L2 IXTK60N50L2 IXYS DS100087AIXTKTX60N50L2.pdf Description: MOSFET N-CH 500V 60A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 610 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V
auf Bestellung 523 Stücke:
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IXFN64N50P IXFN64N50P IXYS Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFN64N50P-Datasheet.PDF?assetguid=C3F76E7E-02FB-4FB9-BB27-8D8D85DFFDE8 description Description: MOSFET N-CH 500V 61A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 32A, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V
auf Bestellung 1040 Stücke:
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IXTQ88N30P IXTQ88N30P IXYS media?resourcetype=datasheets&itemid=9217C088-31F7-40FF-AEF6-3D755C2C3250&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXT-88N30P-Datasheet.PDF Description: MOSFET N-CH 300V 88A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 44A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
auf Bestellung 720 Stücke:
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IXFH270N06T3 IXFH270N06T3 IXYS media?resourcetype=datasheets&itemid=389149E3-6BDB-45C1-88B8-C8699DB13435&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXF-270N06T3-Datasheet.PDF Description: MOSFET N-CH 60V 270A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
auf Bestellung 303 Stücke:
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60+5.53 EUR
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IXCP10M45S IXCP10M45S IXYS Littelfuse-Power-Semi-IXCP10M45S-IXCY10M45s?assetguid=731077FA-A99E-41C1-BC82-960F7ED0C52C Description: IC CURRENT REGULATOR TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Function: Current Regulator
Voltage - Input: 450V
Current - Output: 100mA
Operating Temperature: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Produkt ist nicht verfügbar
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IXTA6N50D2-TRL IXTA6N50D2-TRL IXYS littelfuse-discrete-mosfets-ixt-6n50-datasheet?assetguid=55bbd511-42cb-4098-a3a2-75365a398f37 Description: MOSFET N-CH 500V 6A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3A, 0V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
auf Bestellung 800 Stücke:
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800+7.27 EUR
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IXTA6N50D2-TRL IXTA6N50D2-TRL IXYS littelfuse-discrete-mosfets-ixt-6n50-datasheet?assetguid=55bbd511-42cb-4098-a3a2-75365a398f37 Description: MOSFET N-CH 500V 6A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3A, 0V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
auf Bestellung 830 Stücke:
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IXTP08N100D2 IXTP08N100D2 IXYS littelfuse-discrete-mosfets-ixt-08n100-datasheet?assetguid=5f3f8653-b9a5-4c21-928a-8f26a664dbdc Description: MOSFET N-CH 1000V 800MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-220-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
auf Bestellung 828 Stücke:
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IXTA3N50D2 IXTA3N50D2 IXYS littelfuse-discrete-mosfets-ixt-3n50-datasheet?assetguid=7d9bbc87-6f24-48dc-8dcf-2bc5554e3a93 Description: MOSFET N-CH 500V 3A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 0V
Power Dissipation (Max): 125W (Tc)
Supplier Device Package: TO-263AA
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 25 V
auf Bestellung 1346 Stücke:
Lieferzeit 10-14 Tag (e)
2+8.91 EUR
50+4.71 EUR
100+4.3 EUR
500+3.59 EUR
1000+3.47 EUR
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IXTP6N100D2 IXTP6N100D2 IXYS littelfuse-discrete-mosfets-ixt-6n100-datasheet?assetguid=c49ba42b-7a18-44bb-be04-da2e6496f67b Description: MOSFET N-CH 1000V 6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 0V
Power Dissipation (Max): 300W (Tc)
Supplier Device Package: TO-220-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
auf Bestellung 522 Stücke:
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2+15.36 EUR
50+8.55 EUR
100+7.89 EUR
500+7.13 EUR
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IXTH6N100D2 IXTH6N100D2 IXYS littelfuse-discrete-mosfets-ixt-6n100-datasheet?assetguid=c49ba42b-7a18-44bb-be04-da2e6496f67b Description: MOSFET N-CH 1000V 6A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 0V
Power Dissipation (Max): 300W (Tc)
Supplier Device Package: TO-247 (IXTH)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
auf Bestellung 1067 Stücke:
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2+17.41 EUR
30+10.44 EUR
120+8.91 EUR
510+8.4 EUR
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IXBK64N250 IXBK64N250 IXYS littelfuse-discrete-igbts-ixb-64n250-datasheet?assetguid=6f198893-d712-49ff-908d-12cba0a8ef2b Description: IGBT 2500V 75A TO-264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 64A
Supplier Device Package: TO-264AA
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Power - Max: 735 W
auf Bestellung 79 Stücke:
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1+135.06 EUR
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IXTY90N055T2 IXTY90N055T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_90n055t2_datasheet.pdf?assetguid=9b1b04f2-0e89-452f-ada4-b4c85bbb26c6 Description: MOSFET N-CH 55V 90A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 25 V
auf Bestellung 1569 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.73 EUR
70+2.25 EUR
140+2.03 EUR
560+1.71 EUR
1050+1.59 EUR
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IXFH90N65X3 IXFH90N65X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh90n65x3-datasheet?assetguid=d4c565e9-7fdb-4ff8-bc54-16d1603a6ce2 Description: MOSFET 90A 650V X3 TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 45A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 4mA
Supplier Device Package: TO-247 (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6080 pF @ 25 V
auf Bestellung 289 Stücke:
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1+27.49 EUR
30+17.15 EUR
120+15.18 EUR
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IXSA60N65L2-7TR power-semiconductor-sic-mosfet-ixsa60n65l2-7tr-datasheet?assetguid=13dbac17-813e-4c03-8ede-0725d4259010
IXSA60N65L2-7TR
Hersteller: IXYS
Description: 650V 40M (80A @ 25C) SIC MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 18V
Power Dissipation (Max): 249W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 7.5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 94.7 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 600 V
auf Bestellung 880 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.48 EUR
10+9.23 EUR
100+7.36 EUR
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IXSH60N65L2KHV Littlefuse_7-24-2025_Power_Semiconductor_SiC_MOSFET_IXSH60N65L2KHV_Datasheet.pdf
IXSH60N65L2KHV
Hersteller: IXYS
Description: 650V 40M (40A @ 25C) SIC MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 18V
Power Dissipation (Max): 249W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 7.5mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 94.7 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 600 V
auf Bestellung 100 Stücke:
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Anzahl Preis
2+13.64 EUR
10+9.34 EUR
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IXTP36N30P littelfuse-discrete-mosfets-ixt-36n30p-datasheet?assetguid=bf954b1e-fc82-433f-b03c-f41721f34fc0
IXTP36N30P
Hersteller: IXYS
Description: MOSFET N-CH 300V 36A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
auf Bestellung 308 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+8.82 EUR
50+4.64 EUR
100+4.24 EUR
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IXFH30N50Q3 littelfuse-discrete-mosfets-ixf-30n50q3-datasheet?assetguid=5b0b5bfa-14d1-4221-a3ae-274cbbd7b5ae
IXFH30N50Q3
Hersteller: IXYS
Description: MOSFET N-CH 500V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V
Power Dissipation (Max): 690W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
auf Bestellung 48 Stücke:
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Anzahl Preis
1+22.35 EUR
30+13.68 EUR
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IXFH30N50P 99414.pdf
IXFH30N50P
Hersteller: IXYS
Description: MOSFET N-CH 500V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
auf Bestellung 188 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.29 EUR
30+9.06 EUR
120+7.69 EUR
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IXFK140N30P DS99557FIXFKFX140N30P.pdf
IXFK140N30P
Hersteller: IXYS
Description: MOSFET N-CH 300V 140A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 70A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14800 pF @ 25 V
auf Bestellung 541 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+35.2 EUR
25+22.86 EUR
100+20.71 EUR
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IXTA1N120P IXTA1N120P%2C%20IXTP1N120P.pdf
IXTA1N120P
Hersteller: IXYS
Description: MOSFET N-CH 1200V 1A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 17.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
auf Bestellung 1728 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.26 EUR
50+4.89 EUR
100+4.47 EUR
500+3.74 EUR
1000+3.62 EUR
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IXTH96P085T littelfuse-discrete-mosfets-ixt-96p085t-datasheet?assetguid=961f5f5c-1ad9-4e7d-b8e3-2e5ee68588a7
IXTH96P085T
Hersteller: IXYS
Description: MOSFET P-CH 85V 96A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 500mA, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
auf Bestellung 2449 Stücke:
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Anzahl Preis
2+13.82 EUR
30+8.11 EUR
120+6.85 EUR
510+6.17 EUR
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IXTH68P20T DS100370AIXTHT68P20T.pdf
IXTH68P20T
Hersteller: IXYS
Description: MOSFET P-CH 200V 68A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 34A, 10V
Power Dissipation (Max): 568W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 33400 pF @ 25 V
auf Bestellung 660 Stücke:
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1+29.06 EUR
30+18.19 EUR
120+16.21 EUR
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IXFP72N30X3 littelfuse-discrete-mosfets-ixf-72n30x3-datasheet?assetguid=095debe6-6813-4074-9f25-63bb3df15119
IXFP72N30X3
Hersteller: IXYS
Description: MOSFET N-CH 300V 72A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 36A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
auf Bestellung 2450 Stücke:
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Anzahl Preis
2+16.26 EUR
50+9.08 EUR
100+8.39 EUR
500+7.64 EUR
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IXTT11P50 IXTx11P50_Rev2005.pdf
IXTT11P50
Hersteller: IXYS
Description: MOSFET P-CH 500V 11A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
auf Bestellung 504 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+21.01 EUR
30+12.77 EUR
120+10.97 EUR
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IXFN210N30X3 littelfuse-discrete-mosfets-ixfn210n30x3-datasheet?assetguid=e87aeb6d-7459-4c92-990b-ae67617ef900
IXFN210N30X3
Hersteller: IXYS
Description: MOSFET N-CH 300V 210A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 105A, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24200 pF @ 25 V
auf Bestellung 190 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+68.46 EUR
10+51.51 EUR
100+47.87 EUR
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IXTP10P50P littelfuse-discrete-mosfets-ixt-10p50p-datasheet?assetguid=02d9f7f4-854a-4f4b-b3f3-dc66c452f634
IXTP10P50P
Hersteller: IXYS
Description: MOSFET P-CH 500V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
auf Bestellung 432 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.95 EUR
50+6.48 EUR
100+5.95 EUR
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IXTP01N100D littelfuse-discrete-mosfets-ixt-01n100d-datasheet?assetguid=90f68c0c-66ed-4288-bfb0-3c2769323c27
IXTP01N100D
Hersteller: IXYS
Description: MOSFET N-CH 1000V 400MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 80Ohm @ 50mA, 0V
Power Dissipation (Max): 1.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
auf Bestellung 45 Stücke:
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Anzahl Preis
2+12.55 EUR
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IXTH200N10T DS99654AIXTHTQ200N10T.pdf
IXTH200N10T
Hersteller: IXYS
Description: MOSFET N-CH 100V 200A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 550W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
auf Bestellung 5528 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.47 EUR
30+9.17 EUR
120+7.78 EUR
510+7.16 EUR
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IXTX200N10L2 DS100239IXTKTX200N10L2.pdf
IXTX200N10L2
Hersteller: IXYS
Description: MOSFET N-CH 100V 200A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 540 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
auf Bestellung 218 Stücke:
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Anzahl Preis
1+52.04 EUR
30+34.29 EUR
120+33.89 EUR
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IXTQ52P10P Littelfuse-Discrete-MOSFETs-P-Channel-IXT-52P10P-Datasheet.PDF?assetguid=B047FBE5-952B-40C8-BFA0-176E9733DB4B
IXTQ52P10P
Hersteller: IXYS
Description: MOSFET P-CH 100V 52A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 52A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2845 pF @ 25 V
auf Bestellung 1615 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.85 EUR
30+7.51 EUR
120+6.33 EUR
510+5.64 EUR
Mindestbestellmenge: 2
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IXTQ170N10P littelfuse-discrete-mosfets-ixt-170n10p-datasheet?assetguid=175ebd9e-7358-496e-8ac0-7b03e2fb1949
IXTQ170N10P
Hersteller: IXYS
Description: MOSFET N-CH 100V 170A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 500mA, 10V
Power Dissipation (Max): 715W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
auf Bestellung 520 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.83 EUR
30+11.36 EUR
120+9.73 EUR
510+9.31 EUR
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IXTH75N10L2 littelfuse-discrete-mosfets-ixt-75n10-datasheet?assetguid=ea051e16-aaa9-4983-a975-8d0c07325d72
IXTH75N10L2
Hersteller: IXYS
Description: MOSFET N-CH 100V 75A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 500mA, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 25 V
auf Bestellung 2390 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+26.26 EUR
30+16.31 EUR
120+14.31 EUR
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IXTH12N70X2 ixty2n65x2.pdf
IXTH12N70X2
Hersteller: IXYS
Description: MOSFET N-CH 700V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 25 V
Produkt ist nicht verfügbar
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IXTP12N70X2 ixty2n65x2.pdf
IXTP12N70X2
Hersteller: IXYS
Description: MOSFET N-CH 700V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 25 V
Produkt ist nicht verfügbar
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IXTP12N70X2M ixty2n65x2.pdf
IXTP12N70X2M
Hersteller: IXYS
Description: MOSFET N-CH 700V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 25 V
Produkt ist nicht verfügbar
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IXFN82N60P description DS99559FIXFN82N60P.pdf
IXFN82N60P
Hersteller: IXYS
Description: MOSFET N-CH 600V 72A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 41A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
auf Bestellung 1048 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+59.35 EUR
10+44.29 EUR
100+40.15 EUR
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DE150-102N02A
DE150-102N02A
Hersteller: IXYS
Description: RF MOSFET DE150
Packaging: Tube
Package / Case: 6-SMD, Flat Lead Exposed Pad
Current Rating (Amps): 2A
Configuration: N-Channel
Power - Output: 200W
Technology: MOSFET (Metal Oxide)
Supplier Device Package: DE150
Voltage - Rated: 1000 V
Produkt ist nicht verfügbar
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DE150-501N04A
DE150-501N04A
Hersteller: IXYS
Description: RF MOSFET DE150
Packaging: Tube
Package / Case: 6-SMD, Flat Lead Exposed Pad
Current Rating (Amps): 4.5A
Configuration: N-Channel
Power - Output: 200W
Technology: MOSFET (Metal Oxide)
Supplier Device Package: DE150
Voltage - Rated: 500 V
Current - Test: 25 µA
Produkt ist nicht verfügbar
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IXTY01N100D littelfuse-discrete-mosfets-ixt-01n100d-datasheet?assetguid=90f68c0c-66ed-4288-bfb0-3c2769323c27
IXTY01N100D
Hersteller: IXYS
Description: MOSFET N-CH 1000V 400MA TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 80Ohm @ 50mA, 0V
Power Dissipation (Max): 1.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
Produkt ist nicht verfügbar
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IXFN64N60P description 99443.pdf
IXFN64N60P
Hersteller: IXYS
Description: MOSFET N-CH 600V 50A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 96mOhm @ 500mA, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
auf Bestellung 468 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+50.64 EUR
10+37.42 EUR
100+32.93 EUR
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IRFP264 IRFP264.pdf
IRFP264
Hersteller: IXYS
Description: MOSFET N-CH 250V 38A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 23A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Produkt ist nicht verfügbar
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IXYA20N65C3D1 media?resourcetype=datasheets&itemid=240AF429-77F9-404E-8BCC-BC19E7D8DE31&filename=Littelfuse-Discrete-IGBTs-XPT-IXY-20N65C3D1-Datasheet.PDF
IXYA20N65C3D1
Hersteller: IXYS
Description: IGBT 650V 50A TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 19ns/80ns
Switching Energy: 430µJ (on), 650µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 30 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 200 W
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
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IXFH50N50P3 littelfuse-discrete-mosfets-ixf-50n50p3-datasheet?assetguid=9f18c4f6-a40a-4871-ba8b-9eaf25daedcd
IXFH50N50P3
Hersteller: IXYS
Description: MOSFET N-CH 500V 50A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 25A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4335 pF @ 25 V
Produkt ist nicht verfügbar
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IXFH46N30T littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_46n30t_datasheet.pdf?assetguid=b3489569-af05-4180-9a6f-ffb53d321d7d
IXFH46N30T
Hersteller: IXYS
Description: MOSFET N-CH 300V 46A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 23A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4770 pF @ 25 V
auf Bestellung 268 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.06 EUR
30+7.64 EUR
120+6.45 EUR
Mindestbestellmenge: 2
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IXTK150N15P media?resourcetype=datasheets&itemid=B47B8961-166C-42F8-9EC8-E2A693E15E6F&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXT-150N15P-Datasheet.PDF
IXTK150N15P
Hersteller: IXYS
Description: MOSFET N-CH 150V 150A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 500mA, 10V
Power Dissipation (Max): 714W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
Produkt ist nicht verfügbar
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IXTY18P10T littelfuse-discrete-mosfets-ixt-18p10t-datasheet?assetguid=5c1b0780-b7a9-4cdb-8b92-3cdd987c0682
IXTY18P10T
Hersteller: IXYS
Description: MOSFET P-CH 100V 18A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 9A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 2581 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.53 EUR
70+3.73 EUR
140+3.4 EUR
560+2.91 EUR
1050+2.74 EUR
Mindestbestellmenge: 3
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IXTP32P05T littelfuse-discrete-mosfets-ixt-32p05t-datasheet?assetguid=fa53f3f7-709e-4044-816c-ad0434045c15
IXTP32P05T
Hersteller: IXYS
Description: MOSFET P-CH 50V 32A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 500mA, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 25 V
auf Bestellung 2866 Stücke:
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Anzahl Preis
4+5.28 EUR
50+2.65 EUR
100+2.4 EUR
500+1.95 EUR
1000+1.81 EUR
2000+1.7 EUR
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LPBC31 ld-ls-datasheet?assetguid=15cfd786-1944-4fd3-b50e-f49d84e28d73
LPBC31
Hersteller: IXYS
Description: CONN TERM BLK COVER CLEAR 1POS
Packaging: Box
Color: Clear
For Use With/Related Products: POWR-BLOKS® LD and LS Series
Number of Positions: 1
Type: Cover
Produkt ist nicht verfügbar
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LPBC32 ld-ls-datasheet?assetguid=15cfd786-1944-4fd3-b50e-f49d84e28d73
Hersteller: IXYS
Description: CONN TERM BLK COVER CLEAR 2POS
Packaging: Box
Color: Clear
For Use With/Related Products: POWR-BLOKS® LD and LS Series
Number of Positions: 2
Type: Cover
Produkt ist nicht verfügbar
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LPBC41 ld-ls-datasheet?assetguid=15cfd786-1944-4fd3-b50e-f49d84e28d73
Hersteller: IXYS
Description: CONN TERM BLK COVER CLEAR 1POS
Packaging: Box
Color: Clear
For Use With/Related Products: POWR-BLOKS® LD and LS Series
Number of Positions: 1
Type: Cover
Produkt ist nicht verfügbar
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LPBC02 ld-ls-datasheet?assetguid=15cfd786-1944-4fd3-b50e-f49d84e28d73
LPBC02
Hersteller: IXYS
Description: CONN TERM BLK COVER CLEAR 2POS
Packaging: Box
Color: Clear
For Use With/Related Products: POWR-BLOKS® LD and LS Series
Number of Positions: 2
Type: Cover
Produkt ist nicht verfügbar
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IXD0579MTR ixd0579m-datasheet?assetguid=37ec1db7-6cff-4a49-bb31-4a6570087eff
IXD0579MTR
Hersteller: IXYS
Description: HALF-BRIDGE DRIVER 100V 1A TDFN-
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 6.5V ~ 18V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 100 V
Supplier Device Package: 10-TDFN (3x3)
Rise / Fall Time (Typ): 19ns, 15ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.5A, 2.5A
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.62 EUR
6000+0.61 EUR
9000+0.6 EUR
15000+0.59 EUR
Mindestbestellmenge: 3000
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IXD0579MTR ixd0579m-datasheet?assetguid=37ec1db7-6cff-4a49-bb31-4a6570087eff
IXD0579MTR
Hersteller: IXYS
Description: HALF-BRIDGE DRIVER 100V 1A TDFN-
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 6.5V ~ 18V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 100 V
Supplier Device Package: 10-TDFN (3x3)
Rise / Fall Time (Typ): 19ns, 15ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.5A, 2.5A
auf Bestellung 26945 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.34 EUR
19+0.96 EUR
25+0.86 EUR
100+0.76 EUR
250+0.71 EUR
500+0.68 EUR
1000+0.65 EUR
Mindestbestellmenge: 14
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IXTA80N10T IXTA80N10T.pdf
IXTA80N10T
Hersteller: IXYS
Description: MOSFET N-CH 100V 80A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 25 V
auf Bestellung 90 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.13 EUR
50+3.69 EUR
Mindestbestellmenge: 3
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IXKH35N60C5 IXKH35N60C5.pdf
IXKH35N60C5
Hersteller: IXYS
Description: MOSFET N-CH 600V 35A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 1.2mA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
Produkt ist nicht verfügbar
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IXTP28P065T littelfuse-discrete-mosfets-ixt-28p065t-datasheet?assetguid=cc1f3fbc-381e-4c61-a84b-94c3193be3b7
IXTP28P065T
Hersteller: IXYS
Description: MOSFET P-CH 65V 28A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 14A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
Produkt ist nicht verfügbar
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IXTY14N60X2 ixty2n65x2.pdf
IXTY14N60X2
Hersteller: IXYS
Description: MOSFET N-CH 600V 14A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V
auf Bestellung 1923 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+8.92 EUR
70+4.51 EUR
140+4.13 EUR
560+3.55 EUR
1050+3.47 EUR
Mindestbestellmenge: 2
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IXFA14N60P-TRL littelfuse-discrete-mosfets-ixf-14n60p-datasheet?assetguid=9b66dd8c-b998-4e01-b450-afadebd1db30
IXFA14N60P-TRL
Hersteller: IXYS
Description: MOSFET N-CH 600V 14A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 7A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Produkt ist nicht verfügbar
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IXFX520N075T2 Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXF-520N075T2-Datasheet.PDF?assetguid=90615EDF-C082-4159-945F-6CE8C6ED0F56
IXFX520N075T2
Hersteller: IXYS
Description: MOSFET N-CH 75V 520A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 520A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 100A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 41000 pF @ 25 V
auf Bestellung 354 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+25.13 EUR
30+15.57 EUR
120+13.55 EUR
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IXTK60N50L2 DS100087AIXTKTX60N50L2.pdf
IXTK60N50L2
Hersteller: IXYS
Description: MOSFET N-CH 500V 60A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 610 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V
auf Bestellung 523 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+54.07 EUR
25+36.43 EUR
100+35.7 EUR
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IXFN64N50P description Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFN64N50P-Datasheet.PDF?assetguid=C3F76E7E-02FB-4FB9-BB27-8D8D85DFFDE8
IXFN64N50P
Hersteller: IXYS
Description: MOSFET N-CH 500V 61A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 32A, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V
auf Bestellung 1040 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+44.67 EUR
10+32.77 EUR
100+28.11 EUR
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IXTQ88N30P media?resourcetype=datasheets&itemid=9217C088-31F7-40FF-AEF6-3D755C2C3250&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXT-88N30P-Datasheet.PDF
IXTQ88N30P
Hersteller: IXYS
Description: MOSFET N-CH 300V 88A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 44A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
auf Bestellung 720 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+20.15 EUR
30+12.24 EUR
120+10.5 EUR
510+10.17 EUR
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IXFH270N06T3 media?resourcetype=datasheets&itemid=389149E3-6BDB-45C1-88B8-C8699DB13435&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXF-270N06T3-Datasheet.PDF
IXFH270N06T3
Hersteller: IXYS
Description: MOSFET N-CH 60V 270A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
auf Bestellung 303 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+5.91 EUR
60+5.53 EUR
Mindestbestellmenge: 30
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IXCP10M45S Littelfuse-Power-Semi-IXCP10M45S-IXCY10M45s?assetguid=731077FA-A99E-41C1-BC82-960F7ED0C52C
IXCP10M45S
Hersteller: IXYS
Description: IC CURRENT REGULATOR TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Function: Current Regulator
Voltage - Input: 450V
Current - Output: 100mA
Operating Temperature: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Produkt ist nicht verfügbar
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IXTA6N50D2-TRL littelfuse-discrete-mosfets-ixt-6n50-datasheet?assetguid=55bbd511-42cb-4098-a3a2-75365a398f37
IXTA6N50D2-TRL
Hersteller: IXYS
Description: MOSFET N-CH 500V 6A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3A, 0V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+7.27 EUR
Mindestbestellmenge: 800
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IXTA6N50D2-TRL littelfuse-discrete-mosfets-ixt-6n50-datasheet?assetguid=55bbd511-42cb-4098-a3a2-75365a398f37
IXTA6N50D2-TRL
Hersteller: IXYS
Description: MOSFET N-CH 500V 6A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3A, 0V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
auf Bestellung 830 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.58 EUR
10+10.75 EUR
100+8.9 EUR
Mindestbestellmenge: 2
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IXTP08N100D2 littelfuse-discrete-mosfets-ixt-08n100-datasheet?assetguid=5f3f8653-b9a5-4c21-928a-8f26a664dbdc
IXTP08N100D2
Hersteller: IXYS
Description: MOSFET N-CH 1000V 800MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-220-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
auf Bestellung 828 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.47 EUR
50+2.77 EUR
100+2.51 EUR
500+2.05 EUR
Mindestbestellmenge: 4
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IXTA3N50D2 littelfuse-discrete-mosfets-ixt-3n50-datasheet?assetguid=7d9bbc87-6f24-48dc-8dcf-2bc5554e3a93
IXTA3N50D2
Hersteller: IXYS
Description: MOSFET N-CH 500V 3A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 0V
Power Dissipation (Max): 125W (Tc)
Supplier Device Package: TO-263AA
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 25 V
auf Bestellung 1346 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+8.91 EUR
50+4.71 EUR
100+4.3 EUR
500+3.59 EUR
1000+3.47 EUR
Mindestbestellmenge: 2
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IXTP6N100D2 littelfuse-discrete-mosfets-ixt-6n100-datasheet?assetguid=c49ba42b-7a18-44bb-be04-da2e6496f67b
IXTP6N100D2
Hersteller: IXYS
Description: MOSFET N-CH 1000V 6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 0V
Power Dissipation (Max): 300W (Tc)
Supplier Device Package: TO-220-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
auf Bestellung 522 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.36 EUR
50+8.55 EUR
100+7.89 EUR
500+7.13 EUR
Mindestbestellmenge: 2
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IXTH6N100D2 littelfuse-discrete-mosfets-ixt-6n100-datasheet?assetguid=c49ba42b-7a18-44bb-be04-da2e6496f67b
IXTH6N100D2
Hersteller: IXYS
Description: MOSFET N-CH 1000V 6A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 0V
Power Dissipation (Max): 300W (Tc)
Supplier Device Package: TO-247 (IXTH)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
auf Bestellung 1067 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+17.41 EUR
30+10.44 EUR
120+8.91 EUR
510+8.4 EUR
Mindestbestellmenge: 2
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IXBK64N250 littelfuse-discrete-igbts-ixb-64n250-datasheet?assetguid=6f198893-d712-49ff-908d-12cba0a8ef2b
IXBK64N250
Hersteller: IXYS
Description: IGBT 2500V 75A TO-264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 64A
Supplier Device Package: TO-264AA
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Power - Max: 735 W
auf Bestellung 79 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+135.06 EUR
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IXTY90N055T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_90n055t2_datasheet.pdf?assetguid=9b1b04f2-0e89-452f-ada4-b4c85bbb26c6
IXTY90N055T2
Hersteller: IXYS
Description: MOSFET N-CH 55V 90A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 25 V
auf Bestellung 1569 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.73 EUR
70+2.25 EUR
140+2.03 EUR
560+1.71 EUR
1050+1.59 EUR
Mindestbestellmenge: 4
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IXFH90N65X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh90n65x3-datasheet?assetguid=d4c565e9-7fdb-4ff8-bc54-16d1603a6ce2
IXFH90N65X3
Hersteller: IXYS
Description: MOSFET 90A 650V X3 TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 45A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 4mA
Supplier Device Package: TO-247 (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6080 pF @ 25 V
auf Bestellung 289 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+27.49 EUR
30+17.15 EUR
120+15.18 EUR
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