Technische Details DE150-102N02A IXYS
Description: RF MOSFET DE150, Packaging: Tube, Package / Case: 6-SMD, Flat Lead Exposed Pad, Current Rating (Amps): 2A, Configuration: N-Channel, Power - Output: 200W, Technology: MOSFET (Metal Oxide), Supplier Device Package: DE150, Voltage - Rated: 1000 V.
Weitere Produktangebote DE150-102N02A
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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DE150-102N02A | IXYS |
Description: RF MOSFET DE150 Packaging: Tube Package / Case: 6-SMD, Flat Lead Exposed Pad Current Rating (Amps): 2A Configuration: N-Channel Power - Output: 200W Technology: MOSFET (Metal Oxide) Supplier Device Package: DE150 Voltage - Rated: 1000 V |
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Im Einkaufswagen Stück im Wert von UAH |
| DE150-102N02A |
Hersteller: IXYS
Description: RF MOSFET DE150
Packaging: Tube
Package / Case: 6-SMD, Flat Lead Exposed Pad
Current Rating (Amps): 2A
Configuration: N-Channel
Power - Output: 200W
Technology: MOSFET (Metal Oxide)
Supplier Device Package: DE150
Voltage - Rated: 1000 V
Description: RF MOSFET DE150
Packaging: Tube
Package / Case: 6-SMD, Flat Lead Exposed Pad
Current Rating (Amps): 2A
Configuration: N-Channel
Power - Output: 200W
Technology: MOSFET (Metal Oxide)
Supplier Device Package: DE150
Voltage - Rated: 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH



