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IXTP32P05T

IXTP32P05T IXYS

Littelfuse_Discrete_MOSFETs_P_Channel_IXT_32P05T_Datasheet.PDF
Hersteller: IXYS
MOSFETs 32 Amps 50V 0.036 Rds
auf Bestellung 4945 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.24 EUR
10+2.66 EUR
100+2.38 EUR
500+2.15 EUR
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Technische Details IXTP32P05T IXYS

Description: MOSFET P-CH 50V 32A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Rds On (Max) @ Id, Vgs: 39mOhm @ 500mA, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 50 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 25 V.

Weitere Produktangebote IXTP32P05T nach Preis ab 1.7 EUR bis 6.51 EUR

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IXTP32P05T IXTP32P05T Hersteller : IXYS littelfuse-discrete-mosfets-ixt-32p05t-datasheet?assetguid=fa53f3f7-709e-4044-816c-ad0434045c15 Description: MOSFET P-CH 50V 32A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 500mA, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 25 V
auf Bestellung 2866 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.28 EUR
50+2.65 EUR
100+2.4 EUR
500+1.95 EUR
1000+1.81 EUR
2000+1.7 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXTP32P05T IXTP32P05T Hersteller : IXYS IXT_32P05T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -32A; 83W; TO220AB
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Case: TO220AB
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -32A
Reverse recovery time: 26ns
Gate charge: 46nC
On-state resistance: 39mΩ
Gate-source voltage: ±15V
Power dissipation: 83W
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.51 EUR
Mindestbestellmenge: 11
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