
IXFH110N10P IXYS

Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 110A; 480W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhancement
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 284 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis |
---|---|
8+ | 9.37 EUR |
12+ | 6.18 EUR |
13+ | 5.83 EUR |
120+ | 5.72 EUR |
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Technische Details IXFH110N10P IXYS
Description: MOSFET N-CH 100V 110A TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 500mA, 10V, Power Dissipation (Max): 480W (Tc), Vgs(th) (Max) @ Id: 5V @ 4mA, Supplier Device Package: TO-247AD (IXFH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 25 V.
Weitere Produktangebote IXFH110N10P nach Preis ab 5.72 EUR bis 14.91 EUR
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IXFH110N10P | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 110A; 480W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 110A Power dissipation: 480W Case: TO247-3 On-state resistance: 15mΩ Mounting: THT Gate charge: 110nC Kind of channel: enhancement Kind of package: tube |
auf Bestellung 284 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH110N10P | Hersteller : IXYS |
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auf Bestellung 2792 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH110N10P | Hersteller : Littelfuse Inc. |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 500mA, 10V Power Dissipation (Max): 480W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-247AD (IXFH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 25 V |
auf Bestellung 70 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH110N10P | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXFH110N10P | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |