
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 24.38 EUR |
30+ | 16.68 EUR |
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Technische Details IXFX520N075T2 IXYS
Description: MOSFET N-CH 75V 520A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 520A (Tc), Rds On (Max) @ Id, Vgs: 2.2mOhm @ 100A, 10V, Power Dissipation (Max): 1250W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: PLUS247™-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 41000 pF @ 25 V.
Weitere Produktangebote IXFX520N075T2 nach Preis ab 16.01 EUR bis 24.66 EUR
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IXFX520N075T2 | Hersteller : Littelfuse Inc. |
![]() Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 520A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 100A, 10V Power Dissipation (Max): 1250W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: PLUS247™-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 41000 pF @ 25 V |
auf Bestellung 83 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFX520N075T2 Produktcode: 168486
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IXFX520N075T2 | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXFX520N075T2 | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXFX520N075T2 | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 520A; 1250W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 520A Power dissipation: 1.25kW Case: PLUS247™ On-state resistance: 2.2mΩ Mounting: THT Gate charge: 545nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFX520N075T2 | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 520A; 1250W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 520A Power dissipation: 1.25kW Case: PLUS247™ On-state resistance: 2.2mΩ Mounting: THT Gate charge: 545nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet |
Produkt ist nicht verfügbar |