IXFH16N120P IXYS
Hersteller: IXYSDescription: MOSFET N-CH 1200V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 8A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
auf Bestellung 583 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 31.42 EUR |
| 30+ | 19.83 EUR |
| 120+ | 18 EUR |
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Technische Details IXFH16N120P IXYS
Description: MOSFET N-CH 1200V 16A TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 950mOhm @ 8A, 10V, Power Dissipation (Max): 660W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 1mA, Supplier Device Package: TO-247AD (IXFH), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V.
Weitere Produktangebote IXFH16N120P nach Preis ab 29.52 EUR bis 33.49 EUR
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IXFH16N120P | Hersteller : IXYS |
MOSFETs 1 |
auf Bestellung 300 Stücke: Lieferzeit 517-521 Tag (e) |
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IXFH16N120P | Hersteller : Littelfuse |
Trans MOSFET N-CH 1.2KV 16A 3-Pin(3+Tab) TO-247AD |
Produkt ist nicht verfügbar |
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IXFH16N120P | Hersteller : Ixys Corporation |
Trans MOSFET N-CH 1.2KV 16A 3-Pin(3+Tab) TO-247AD |
Produkt ist nicht verfügbar |
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IXFH16N120P | Hersteller : Littelfuse |
Trans MOSFET N-CH 1.2KV 16A 3-Pin(3+Tab) TO-247AD |
Produkt ist nicht verfügbar |