IXFA180N10T2-TRL IXYS
Hersteller: IXYS
Description: MOSFET N-CH 100V 180A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
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Technische Details IXFA180N10T2-TRL IXYS
Description: MOSFET N-CH 100V 180A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V, Power Dissipation (Max): 480W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V.
Weitere Produktangebote IXFA180N10T2-TRL
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IXFA180N10T2-TRL | IXYS |
MOSFETs IXFA180N10T2 TRL |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
IXFA180N10T2-TRL | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 100V; 180A; 480W; D2PAK,TO263; 66ns Type of transistor: N-MOSFET Drain-source voltage: 100V Drain current: 180A Power dissipation: 480W Case: D2PAK; TO263 Gate-source voltage: 20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 185nC Kind of channel: enhancement Reverse recovery time: 66ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXFA180N10T2-TRL |
|
Hersteller: IXYS
MOSFETs IXFA180N10T2 TRL
MOSFETs IXFA180N10T2 TRL
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXFA180N10T2-TRL |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 180A; 480W; D2PAK,TO263; 66ns
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 185nC
Kind of channel: enhancement
Reverse recovery time: 66ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 180A; 480W; D2PAK,TO263; 66ns
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 185nC
Kind of channel: enhancement
Reverse recovery time: 66ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH