IXTP6N100D2 IXYS
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO220AB; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 41ns
| Anzahl | Privatkunde |
|---|---|
| 7+ | 12.38 EUR |
| 9+ | 10.08 EUR |
| 10+ | 8.97 EUR |
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Technische Details IXTP6N100D2 IXYS
Description: MOSFET N-CH 1000V 6A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Depletion Mode, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 0V, Power Dissipation (Max): 300W (Tc), Supplier Device Package: TO-220-3, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V.
Weitere Produktangebote IXTP6N100D2 nach Preis ab 11.35 EUR bis 21.8 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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IXTP6N100D2 | IXYS |
MOSFETs N-CH MOSFETS (D2) 1000V 6A |
auf Bestellung 228 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP6N100D2 | IXYS |
Description: MOSFET N-CH 1000V 6A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 0V Power Dissipation (Max): 300W (Tc) Supplier Device Package: TO-220-3 Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V |
auf Bestellung 312 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXTP6N100D2 |
|
Hersteller: IXYS
MOSFETs N-CH MOSFETS (D2) 1000V 6A
MOSFETs N-CH MOSFETS (D2) 1000V 6A
auf Bestellung 228 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 21.42 EUR |
| 10+ | 12.42 EUR |
| 100+ | 11.96 EUR |
| IXTP6N100D2 |
|
Hersteller: IXYS
Description: MOSFET N-CH 1000V 6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 0V
Power Dissipation (Max): 300W (Tc)
Supplier Device Package: TO-220-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
Description: MOSFET N-CH 1000V 6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 0V
Power Dissipation (Max): 300W (Tc)
Supplier Device Package: TO-220-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
auf Bestellung 312 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 21.8 EUR |
| 50+ | 12.27 EUR |
| 100+ | 11.35 EUR |