auf Bestellung 1064 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 61.04 EUR |
10+ | 54.24 EUR |
25+ | 49.47 EUR |
50+ | 48.75 EUR |
100+ | 47.1 EUR |
250+ | 44.19 EUR |
500+ | 40.71 EUR |
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Technische Details IXTK60N50L2 IXYS
Description: MOSFET N-CH 500V 60A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V, Power Dissipation (Max): 960W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-264 (IXTK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 610 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V.
Weitere Produktangebote IXTK60N50L2 nach Preis ab 47.77 EUR bis 61.44 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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IXTK60N50L2 | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 500V 60A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V Power Dissipation (Max): 960W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-264 (IXTK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 610 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V |
auf Bestellung 434 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTK60N50L2 | Hersteller : Littelfuse | Trans MOSFET N-CH 500V 60A 3-Pin(3+Tab) TO-264AA |
Produkt ist nicht verfügbar |
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IXTK60N50L2 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; TO264; 980ns Mounting: THT Polarisation: unipolar Kind of package: tube Case: TO264 Kind of channel: enhanced Reverse recovery time: 980ns Drain-source voltage: 500V Drain current: 60A On-state resistance: 0.1Ω Type of transistor: N-MOSFET Power dissipation: 960W Features of semiconductor devices: linear power mosfet Gate charge: 610nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTK60N50L2 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; TO264; 980ns Mounting: THT Polarisation: unipolar Kind of package: tube Case: TO264 Kind of channel: enhanced Reverse recovery time: 980ns Drain-source voltage: 500V Drain current: 60A On-state resistance: 0.1Ω Type of transistor: N-MOSFET Power dissipation: 960W Features of semiconductor devices: linear power mosfet Gate charge: 610nC |
Produkt ist nicht verfügbar |