IXTK100N25P IXYS
Hersteller: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 100A; 600W; TO264
Mounting: THT
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO264
Reverse recovery time: 200ns
Drain-source voltage: 250V
Drain current: 100A
On-state resistance: 27mΩ
Type of transistor: N-MOSFET
Power dissipation: 600W
Polarisation: unipolar
Kind of package: tube
Gate charge: 185nC
Technology: PolarHT™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 251 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 16.57 EUR |
| 7+ | 11.17 EUR |
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Technische Details IXTK100N25P IXYS
Description: MOSFET N-CH 250V 100A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 27mOhm @ 500mA, 10V, Power Dissipation (Max): 600W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-264 (IXTK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V.
Weitere Produktangebote IXTK100N25P nach Preis ab 11.17 EUR bis 20.93 EUR
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IXTK100N25P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 100A; 600W; TO264 Mounting: THT Kind of channel: enhanced Gate-source voltage: ±20V Case: TO264 Reverse recovery time: 200ns Drain-source voltage: 250V Drain current: 100A On-state resistance: 27mΩ Type of transistor: N-MOSFET Power dissipation: 600W Polarisation: unipolar Kind of package: tube Gate charge: 185nC Technology: PolarHT™ |
auf Bestellung 251 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTK100N25P | Hersteller : IXYS |
Description: MOSFET N-CH 250V 100A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 500mA, 10V Power Dissipation (Max): 600W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-264 (IXTK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V |
auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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