Produkte > IXYS > IXTK100N25P
IXTK100N25P

IXTK100N25P IXYS

media?resourcetype=datasheets&itemid=A81F4223-C5D3-44C0-A60C-AE41A30745EF&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXT-100N25P-Datasheet.PDF
Hersteller: IXYS
Description: MOSFET N-CH 250V 100A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 500mA, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+27.64 EUR
25+17.27 EUR
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details IXTK100N25P IXYS

Description: MOSFET N-CH 250V 100A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 27mOhm @ 500mA, 10V, Power Dissipation (Max): 600W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-264 (IXTK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V.

Weitere Produktangebote IXTK100N25P

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
IXTK100N25P IXTQ100N25P.pdf Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTK100N25P IXTK100N25P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_standard_ixt_100n25p_datasheet.pdf.pdf Description: MOSFET N-CH 250V 100A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 500mA, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 25 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXTK100N25P IXTK100N25P IXYS Littelfuse_Discrete_MOSFETs_N_Channel_Standard_IXT_100N25P_Datasheet.PDF MOSFETs 100 Amps 250V 0.027 Rds
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTK100N25P IXTQ100N25P.pdf
Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTK100N25P littelfuse_discrete_mosfets_n-channel_standard_ixt_100n25p_datasheet.pdf.pdf
IXTK100N25P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 250V 100A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 500mA, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXTK100N25P Littelfuse_Discrete_MOSFETs_N_Channel_Standard_IXT_100N25P_Datasheet.PDF
IXTK100N25P
Hersteller: IXYS
MOSFETs 100 Amps 250V 0.027 Rds
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH