auf Bestellung 221 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 20.87 EUR |
| 10+ | 18.37 EUR |
| 30+ | 13.83 EUR |
| 60+ | 13.53 EUR |
| 120+ | 13.43 EUR |
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Technische Details IXTT10P60 IXYS
Description: MOSFET P-CH 600V 10A TO268, Packaging: Tube, Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-268AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V.
Weitere Produktangebote IXTT10P60
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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IXTT10P60 | Hersteller : Littelfuse |
 Trans MOSFET P-CH Si 600V 10A 3-Pin(2+Tab) TO-268 |
auf Bestellung 270 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTT10P60 | Hersteller : Littelfuse |
Trans MOSFET P-CH Si 600V 10A 3-Pin(2+Tab) TO-268 |
Produkt ist nicht verfügbar |
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| IXTT10P60 | Hersteller : IXYS |
IXTT10P60 SMD P channel transistors |
Produkt ist nicht verfügbar |
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IXTT10P60 | Hersteller : IXYS |
Description: MOSFET P-CH 600V 10A TO268 Packaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-268AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V |
Produkt ist nicht verfügbar |