IXFH240N15X3 IXYS

Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 240A; Idm: 420A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Pulsed drain current: 420A
Power dissipation: 780W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 97ns
Technology: HiPerFET™; X3-Class
Anzahl je Verpackung: 1 Stücke
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Technische Details IXFH240N15X3 IXYS
Description: MOSFET N-CH 150V 240A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 240A (Tc), Rds On (Max) @ Id, Vgs: 5.4mOhm @ 120A, 10V, Power Dissipation (Max): 780W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 4mA, Supplier Device Package: TO-247 (IXTH), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9580 pF @ 25 V.
Weitere Produktangebote IXFH240N15X3
Foto | Bezeichnung | Hersteller | Beschreibung |
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IXFH240N15X3 | Hersteller : Littelfuse Inc. |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 120A, 10V Power Dissipation (Max): 780W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-247 (IXTH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9580 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFH240N15X3 | Hersteller : IXYS |
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Produkt ist nicht verfügbar |
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IXFH240N15X3 | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 240A; Idm: 420A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 240A Pulsed drain current: 420A Power dissipation: 780W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 5.4mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 97ns Technology: HiPerFET™; X3-Class |
Produkt ist nicht verfügbar |