IXTP36P15P IXYS
Hersteller: IXYSCategory: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO220AB
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 55nC
Reverse recovery time: 228ns
auf Bestellung 218 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 8.12 EUR |
| 15+ | 4.92 EUR |
| 50+ | 4.83 EUR |
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Technische Details IXTP36P15P IXYS
Description: MOSFET P-CH 150V 36A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V.
Weitere Produktangebote IXTP36P15P nach Preis ab 4.83 EUR bis 11.88 EUR
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IXTP36P15P | Hersteller : IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO220AB Type of transistor: P-MOSFET Technology: PolarP™ Polarisation: unipolar Drain-source voltage: -150V Drain current: -36A Power dissipation: 300W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 55nC Reverse recovery time: 228ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 218 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTP36P15P | Hersteller : IXYS |
Description: MOSFET P-CH 150V 36A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V |
auf Bestellung 459 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP36P15P | Hersteller : IXYS |
MOSFETs -36.0 Amps -150V 0.110 Rds |
auf Bestellung 51 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP36P15P | Hersteller : Littelfuse |
Trans MOSFET P-CH 150V 36A 3-Pin(3+Tab) TO-220 |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP36P15P | Hersteller : Littelfuse |
Trans MOSFET P-CH 150V 36A 3-Pin(3+Tab) TO-220 |
Produkt ist nicht verfügbar |
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IXTP36P15P | Hersteller : Littelfuse |
Trans MOSFET P-CH 150V 36A 3-Pin(3+Tab) TO-220 |
Produkt ist nicht verfügbar |