IXFP50N20X3 IXYS

Description: DISCMSFT NCHULTRJNCTX3CLASS TO-2, Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220-3 (IXFP), Vgs(th) (Max) @ Id: 4.5V @ 1mA, Power Dissipation (Max): 240W (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ).