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Technische Details IXTT16N50D2 IXYS
Description: MOSFET N-CH 500V 16A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Depletion Mode, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 240mOhm @ 8A, 0V, Power Dissipation (Max): 695W (Tc), Supplier Device Package: TO-268AA, Drive Voltage (Max Rds On, Min Rds On): 0V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 199 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 25 V.
Weitere Produktangebote IXTT16N50D2 nach Preis ab 33.67 EUR bis 33.67 EUR
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IXTT16N50D2 | Hersteller : IXYS |
 Description: MOSFET N-CH 500V 16A TO268Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 8A, 0V Power Dissipation (Max): 695W (Tc) Supplier Device Package: TO-268AA Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 199 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 25 V |
auf Bestellung 9 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTT16N50D2 | Hersteller : Littelfuse |
Trans MOSFET N-CH 500V 3-Pin(2+Tab) TO-268 |
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IXTT16N50D2 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO268; 130ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Power dissipation: 695W Case: TO268 On-state resistance: 0.3Ω Mounting: SMD Kind of package: tube Kind of channel: depletion Reverse recovery time: 130ns |
Produkt ist nicht verfügbar |