Technische Details IXTT16N50D2 IXYS
Description: MOSFET N-CH 500V 16A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Depletion Mode, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 240mOhm @ 8A, 0V, Power Dissipation (Max): 695W (Tc), Supplier Device Package: TO-268AA, Drive Voltage (Max Rds On, Min Rds On): 0V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 199 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 25 V.
Weitere Produktangebote IXTT16N50D2 nach Preis ab 32.26 EUR bis 46.39 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IXTT16N50D2 | IXYS |
Description: MOSFET N-CH 500V 16A TO268Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 8A, 0V Power Dissipation (Max): 695W (Tc) Supplier Device Package: TO-268AA Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 199 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 25 V |
auf Bestellung 216 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IXTT16N50D2 |
![]() |
Hersteller: IXYS
Description: MOSFET N-CH 500V 16A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 8A, 0V
Power Dissipation (Max): 695W (Tc)
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 199 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 25 V
Description: MOSFET N-CH 500V 16A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 8A, 0V
Power Dissipation (Max): 695W (Tc)
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 199 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 25 V
auf Bestellung 216 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 46.39 EUR |
| 10+ | 37.29 EUR |
| 30+ | 34.64 EUR |
| 120+ | 32.26 EUR |



