IXSJ43N120R1 IXYS

Description: 1200V 36M (43A @ 25C) SIC MOSFET, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), Rds On (Max) @ Id, Vgs: 47mOhm @ 1A, 18V, Power Dissipation (Max): 142W (Tc), Vgs(th) (Max) @ Id: 4.8V @ 11.1mA, Supplier Device Package: ISO247-3L, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +12V, -4V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2453 pF @ 800 V.