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Technische Details IXFK360N15T2 IXYS
Description: MOSFET N-CH 150V 360A TO264AA, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 360A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 60A, 10V, Power Dissipation (Max): 1670W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: TO-264AA (IXFK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 715 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 47500 pF @ 25 V.
Weitere Produktangebote IXFK360N15T2 nach Preis ab 41.66 EUR bis 68.2 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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IXFK360N15T2 | IXYS |
 Description: MOSFET N-CH 150V 360A TO264AAPackaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 360A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 60A, 10V Power Dissipation (Max): 1670W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: TO-264AA (IXFK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 715 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 47500 pF @ 25 V |
auf Bestellung 544 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXFK360N15T2 | IXYS/Littelfuse |
N-канальний ПТ, Udss, В = 10, Id = 360 А, Qg, нКл = 715 @ 10 В, Rds = 4 мОм @ 60 А, 10 В, Ugs(th) = 5 В @ 8 мА, Р, Вт = 1670, Тексп, °C = -55...+175, Тип монт. = Вивідний,... Транзистори Корпус: TO-264-3 Очікується: 100 Од. вим: шт Anzahl je Verpackung: 25 Stücke |
verfügbar 1 Stücke: |
Im Einkaufswagen Stück im Wert von UAH |
| IXFK360N15T2 |
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Hersteller: IXYS
Description: MOSFET N-CH 150V 360A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 60A, 10V
Power Dissipation (Max): 1670W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 715 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 47500 pF @ 25 V
Description: MOSFET N-CH 150V 360A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 60A, 10V
Power Dissipation (Max): 1670W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 715 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 47500 pF @ 25 V
auf Bestellung 544 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 68.2 EUR |
| 25+ | 45.8 EUR |
| 50+ | 42.91 EUR |
| 100+ | 41.66 EUR |
| IXFK360N15T2 |
|
Hersteller: IXYS/Littelfuse
N-канальний ПТ, Udss, В = 10, Id = 360 А, Qg, нКл = 715 @ 10 В, Rds = 4 мОм @ 60 А, 10 В, Ugs(th) = 5 В @ 8 мА, Р, Вт = 1670, Тексп, °C = -55...+175, Тип монт. = Вивідний,... Транзистори Корпус: TO-264-3 Очікується: 100 Од. вим: шт
Anzahl je Verpackung: 25 Stücke
N-канальний ПТ, Udss, В = 10, Id = 360 А, Qg, нКл = 715 @ 10 В, Rds = 4 мОм @ 60 А, 10 В, Ugs(th) = 5 В @ 8 мА, Р, Вт = 1670, Тексп, °C = -55...+175, Тип монт. = Вивідний,... Транзистори Корпус: TO-264-3 Очікується: 100 Од. вим: шт
Anzahl je Verpackung: 25 Stücke
verfügbar 1 Stücke: