IXFP3N120 IXYS
Hersteller: IXYS
Description: MOSFET N-CH 1200V 3A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 500mA, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
| Anzahl | Privatkunde |
|---|---|
| 2+ | 17.3 EUR |
| 50+ | 9.56 EUR |
| 100+ | 8.81 EUR |
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Technische Details IXFP3N120 IXYS
Description: MOSFET N-CH 1200V 3A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Rds On (Max) @ Id, Vgs: 4.5Ohm @ 500mA, 10V, Power Dissipation (Max): 200W (Tc), Vgs(th) (Max) @ Id: 5V @ 1.5mA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V.
Weitere Produktangebote IXFP3N120 nach Preis ab 10.86 EUR bis 20.94 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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IXFP3N120 | IXYS |
MOSFETs 3 Amps 1200V 4.50 Rds |
auf Bestellung 415 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXFP3N120 |
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Hersteller: IXYS
MOSFETs 3 Amps 1200V 4.50 Rds
MOSFETs 3 Amps 1200V 4.50 Rds
auf Bestellung 415 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 20.94 EUR |
| 10+ | 12.15 EUR |
| 100+ | 10.86 EUR |