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IXBH6N170 IXBH6N170 IXYS IXBH6N170_IXBT6N170.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 6A; 75W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate charge: 17nC
Turn-on time: 104ns
Turn-off time: 700ns
Collector current: 6A
Gate-emitter voltage: ±20V
Pulsed collector current: 36A
Power dissipation: 75W
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
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IXFT340N075T2 IXFT340N075T2 IXYS IXFH(T)340N075T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 340A; 935W; TO268; 75ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 340A
Power dissipation: 935W
Case: TO268
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 75ns
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IXFH180N20X3 IXFH180N20X3 IXYS IXF_180N20X3_HV.pdf 200VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 180A; 780W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Reverse recovery time: 94ns
Gate charge: 154nC
On-state resistance: 7.5mΩ
Drain current: 180A
Power dissipation: 780W
Technology: HiPerFET™; X3-Class
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6+14.13 EUR
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IXTH80N20L IXTH80N20L IXYS IXTH(T)80N20L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 80A; 520W; TO247-3; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate charge: 180nC
On-state resistance: 32mΩ
Drain current: 80A
Power dissipation: 520W
Features of semiconductor devices: linear power mosfet
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IXTT80N20L IXTT80N20L IXYS IXTH(T)80N20L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 80A; 520W; TO268; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Case: TO268
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate charge: 180nC
On-state resistance: 32mΩ
Drain current: 80A
Power dissipation: 520W
Features of semiconductor devices: linear power mosfet
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IXFT180N20X3HV IXFT180N20X3HV IXYS IXF_180N20X3_HV.pdf 200VProductBrief.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 180A; 780W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Case: TO268
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Reverse recovery time: 94ns
Gate charge: 154nC
On-state resistance: 7.5mΩ
Drain current: 180A
Power dissipation: 780W
Technology: HiPerFET™; X3-Class
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CPC1303GRTR CPC1303GRTR IXYS CPC1303GR.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 30V; SO4
Type of optocoupler: optocoupler
Mounting: SMD
Case: SO4
Kind of output: transistor
Turn-on time: 2µs
Turn-off time: 8µs
Number of channels: 1
Collector-emitter voltage: 30V
CTR@If: 200-2500%@0.2mA
Insulation voltage: 5kV
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IXFQ140N20X3 IXFQ140N20X3 IXYS IXF_140N20X3_HV.pdf 200VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO3P
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
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IXFH140N20X3 IXFH140N20X3 IXYS IXF_140N20X3_HV.pdf 200VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Technology: HiPerFET™; X3-Class
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IXFN140N20P IXFN140N20P IXYS IXFN140N20P.pdf description Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 115A; SOT227B; screw; Idm: 280A
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 115A
Pulsed drain current: 280A
Power dissipation: 680W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Gate charge: 240nC
Kind of channel: enhancement
Reverse recovery time: 150ns
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Technology: HiPerFET™; Polar™
Electrical mounting: screw
Mechanical mounting: screw
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IXFR140N20P IXFR140N20P IXYS IXFR140N20P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 90A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
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IXFK140N20P IXFK140N20P IXYS IXFK140N20P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 140A; 830W; TO264
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 240nC
On-state resistance: 18mΩ
Drain current: 140A
Drain-source voltage: 200V
Power dissipation: 830W
Kind of package: tube
Case: TO264
Kind of channel: enhancement
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IXFT140N20X3HV IXFT140N20X3HV IXYS IXF_140N20X3_HV.pdf 200VProductBrief.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO268
Mounting: SMD
Drain current: 140A
Kind of channel: enhancement
Power dissipation: 520W
Technology: HiPerFET™; X3-Class
Type of transistor: N-MOSFET
Case: TO268
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 90ns
Gate charge: 127nC
On-state resistance: 9.6mΩ
Gate-source voltage: ±20V
Drain-source voltage: 200V
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IXTK140N20P IXTK140N20P IXYS IXTK140N20P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 140A; 800W; TO264
Mounting: THT
Technology: PolarHT™
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 180ns
Gate charge: 240nC
On-state resistance: 18mΩ
Gate-source voltage: ±20V
Drain current: 140A
Drain-source voltage: 200V
Power dissipation: 800W
Kind of package: tube
Case: TO264
Kind of channel: enhancement
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IXGH48N60A3 IXGH48N60A3 IXYS IXGA(P,H)48N60A3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
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IXGH48N60A3D1 IXGH48N60A3D1 IXYS IXGH48N60A3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
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DSS16-0045AS-TRL IXYS media?resourcetype=datasheets&itemid=c16e9d10-00d5-476f-bb47-f1fb327bacda&filename=power_semiconductor_discrete_diode_dss16-0045as_datasheet.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 45V; 1.5A
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 45V
Load current: 1.5A
Semiconductor structure: single diode
Max. forward voltage: 0.67V
Max. forward impulse current: 280A
Kind of package: reel; tape
Capacitance: 710pF
Leakage current: 0.5mA
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DSS16-01AS-TRL IXYS Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 16A
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 16A
Semiconductor structure: single diode
Max. forward voltage: 0.79V
Max. forward impulse current: 230A
Kind of package: reel; tape
Capacitance: 334pF
Leakage current: 0.5mA
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IXFA22N65X2 IXFA22N65X2 IXYS IXF_22N65X2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 390W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Technology: HiPerFET™; X2-Class
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DPS30I600HA IXYS Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 450A; TO247-2; 120ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Kind of package: tube
Max. forward impulse current: 0.45kA
Case: TO247-2
Reverse recovery time: 120ns
Technology: FRED
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IXFB44N100P IXFB44N100P IXYS IXFB44N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 44A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 305nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
auf Bestellung 29 Stücke:
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3+32.26 EUR
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DSP25-16A DSP25-16A IXYS Littelfuse-Power-Semiconductors-DSP25-12A-Datasheet?assetguid=e596c328-6ce1-40f9-b9cf-5c4bf362b9c8 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 25A; tube; Ifsm: 300A; TO247-3; 160W
Mounting: THT
Type of diode: rectifying
Kind of package: tube
Max. forward voltage: 1.23V
Load current: 25A
Power dissipation: 160W
Max. forward impulse current: 0.3kA
Max. off-state voltage: 1.6kV
Case: TO247-3
Semiconductor structure: double series
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DSP25-12A DSP25-12A IXYS DSP25-12A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 25A; tube; Ifsm: 300A; TO247-3; 160W
Mounting: THT
Type of diode: rectifying
Kind of package: tube
Max. forward voltage: 1.16V
Load current: 25A
Power dissipation: 160W
Max. forward impulse current: 0.3kA
Max. off-state voltage: 1.2kV
Case: TO247-3
Semiconductor structure: double series
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DSP25-16AR DSP25-16AR IXYS Littelfuse-Power-Semiconductors-DSP25-12A-Datasheet?assetguid=e596c328-6ce1-40f9-b9cf-5c4bf362b9c8 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 28Ax2; tube; Ifsm: 300A; ISOPLUS247™
Mounting: THT
Type of diode: rectifying
Kind of package: tube
Max. forward voltage: 1.23V
Load current: 28A x2
Power dissipation: 100W
Max. forward impulse current: 0.3kA
Max. off-state voltage: 1.6kV
Case: ISOPLUS247™
Semiconductor structure: double series
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DSP25-12AT-TUB DSP25-12AT-TUB IXYS DSP25-12AT.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A
Mounting: SMD
Type of diode: rectifying
Max. forward voltage: 1.16V
Load current: 25A
Power dissipation: 160W
Max. forward impulse current: 0.3kA
Max. off-state voltage: 1.2kV
Case: D3PAK
Semiconductor structure: double series
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DSP25-16AT-TUB DSP25-16AT-TUB IXYS DSP25-16AT.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A
Mounting: SMD
Type of diode: rectifying
Max. forward voltage: 1.16V
Load current: 25A
Power dissipation: 160W
Max. forward impulse current: 0.3kA
Max. off-state voltage: 1.6kV
Case: D3PAK
Semiconductor structure: double series
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DSP25-12AT-TRL IXYS media?resourcetype=datasheets&itemid=e596c328-6ce1-40f9-b9cf-5c4bf362b9c8&filename=Littelfuse-Power-Semiconductors-DSP25-12A-Datasheet Category: SMD universal diodes
Description: Diode: rectifying; SMD; D3PAK,TO268AA; reel,tape
Mounting: SMD
Type of diode: rectifying
Kind of package: reel; tape
Case: D3PAK; TO268AA
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DSP25-16AT-TRL IXYS media?resourcetype=datasheets&itemid=e596c328-6ce1-40f9-b9cf-5c4bf362b9c8&filename=Littelfuse-Power-Semiconductors-DSP25-12A-Datasheet Category: SMD universal diodes
Description: Diode: rectifying; SMD; D3PAK,TO268AA; reel,tape
Mounting: SMD
Type of diode: rectifying
Kind of package: reel; tape
Case: D3PAK; TO268AA
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IXFR24N100Q3 IXFR24N100Q3 IXYS IXFR24N100Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 500W; ISOPLUS247™
Type of transistor: N-MOSFET
Power dissipation: 500W
Case: ISOPLUS247™
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Drain-source voltage: 1kV
Polarisation: unipolar
Kind of channel: enhancement
On-state resistance: 0.49Ω
Drain current: 18A
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IXFN24N100 IXFN24N100 IXYS IXFN24N100-DTE.pdf description Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 24A; SOT227B; screw; Idm: 96A; 568W
Power dissipation: 568W
Case: SOT227B
Gate charge: 250nC
Gate-source voltage: ±30V
Pulsed drain current: 96A
Drain-source voltage: 1kV
Polarisation: unipolar
Technology: HiPerFET™
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Kind of channel: enhancement
Reverse recovery time: 250ns
On-state resistance: 390mΩ
Drain current: 24A
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IXFK24N100Q3 IXFK24N100Q3 IXYS IXFK(X)24N100Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 1000W; TO264
Type of transistor: N-MOSFET
Power dissipation: 1kW
Case: TO264
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Drain-source voltage: 1kV
Polarisation: unipolar
Kind of channel: enhancement
On-state resistance: 440mΩ
Drain current: 24A
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IXTX24N100 IXTX24N100 IXYS IXTX24N100.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 568W; PLUS247™; 850ns
Type of transistor: N-MOSFET
Power dissipation: 568W
Case: PLUS247™
Mounting: THT
Gate charge: 267nC
Kind of package: tube
Drain-source voltage: 1kV
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Kind of channel: enhancement
Reverse recovery time: 850ns
On-state resistance: 0.4Ω
Drain current: 24A
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IXFX24N100Q3 IXFX24N100Q3 IXYS IXFK(X)24N100Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 1000W; PLUS247™
Type of transistor: N-MOSFET
Power dissipation: 1kW
Case: PLUS247™
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Drain-source voltage: 1kV
Polarisation: unipolar
Kind of channel: enhancement
On-state resistance: 440mΩ
Drain current: 24A
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IXYX120N120C3 IXYX120N120C3 IXYS IXYK(x)120N120C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Mounting: THT
Turn-on time: 105ns
Turn-off time: 346ns
Gate charge: 412nC
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 700A
Power dissipation: 1.5kW
Collector-emitter voltage: 1.2kV
Case: PLUS247™
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IXYX120N120B3 IXYX120N120B3 IXYS IXYX120N120B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Mounting: THT
Turn-on time: 84ns
Turn-off time: 826ns
Gate charge: 400nC
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 800A
Power dissipation: 1.5kW
Collector-emitter voltage: 1.2kV
Case: PLUS247™
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IXTX120P20T IXTX120P20T IXYS IXT_120P20T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W
Mounting: THT
Case: PLUS247™
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -120A
Reverse recovery time: 300ns
Gate charge: 740nC
On-state resistance: 30mΩ
Gate-source voltage: ±15V
Power dissipation: 1.04kW
auf Bestellung 28 Stücke:
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DPG10I200PA DPG10I200PA IXYS Littelfuse-Power-Semiconductors-DPG10I200PA-Datasheet?assetguid=EC448438-07B9-4C8C-BA5D-4A6822B3E045 Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 140A; TO220AC; 65W
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220AC
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 35ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 1.27V
Load current: 10A
Power dissipation: 65W
Max. forward impulse current: 140A
Max. off-state voltage: 200V
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DPG10I400PA DPG10I400PA IXYS DPG10I400PA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 150A; TO220AC; 65W
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220AC
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 45ns
Max. forward voltage: 1.03V
Load current: 10A
Power dissipation: 65W
Max. forward impulse current: 150A
Max. off-state voltage: 0.4kV
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34+2.14 EUR
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DPG10P400PJ DPG10P400PJ IXYS DPG10P400PJ.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 130A; ISOPLUS220™
Mounting: THT
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: ISOPLUS220™
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 45ns
Max. forward voltage: 1.28V
Load current: 10A
Power dissipation: 60W
Max. forward impulse current: 130A
Max. off-state voltage: 0.4kV
auf Bestellung 18 Stücke:
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DPG10I300PA DPG10I300PA IXYS DPG10I300PA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10A; tube; Ifsm: 140A; TO220AC; 65W
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220AC
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 35ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 1.27V
Load current: 10A
Power dissipation: 65W
Max. forward impulse current: 140A
Max. off-state voltage: 300V
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23+3.1 EUR
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DPG10I200PM DPG10I200PM IXYS DPG10I200PM.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 140A; TO220FP-2; 35W
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220FP-2
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 35ns
Max. forward voltage: 1.27V
Load current: 10A
Power dissipation: 35W
Max. forward impulse current: 140A
Max. off-state voltage: 200V
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35+2.07 EUR
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DPG10I400PM DPG10I400PM IXYS DPG10I400PM.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 150A; TO220FP-2; 35W
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220FP-2
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 45ns
Max. forward voltage: 1.32V
Load current: 10A
Power dissipation: 35W
Max. forward impulse current: 150A
Max. off-state voltage: 0.4kV
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DPG10I600APA IXYS Category: THT universal diodes
Description: Diode: rectifying; THT; tube; TO220AB; FRED
Mounting: THT
Technology: FRED
Case: TO220AB
Type of diode: rectifying
Kind of package: tube
Produkt ist nicht verfügbar
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DPG10IM300UC-TRL IXYS Littelfuse-Power-Semiconductors-DPG10IM300UC-Datasheet?assetguid=4F368F7B-B10F-46AB-A8F1-CBCA0C2C4559 Category: SMD universal diodes
Description: Diode: rectifying; SMD; TO252; FRED; reel,tape
Mounting: SMD
Technology: FRED
Case: TO252
Type of diode: rectifying
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DPG10IM300UC-TUB IXYS Category: SMD universal diodes
Description: Diode: rectifying; SMD; TO252; FRED; tube
Mounting: SMD
Technology: FRED
Case: TO252
Type of diode: rectifying
Kind of package: tube
Produkt ist nicht verfügbar
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CPC2907B CPC2907B IXYS CPC2907B.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 2000mA; OptoMOS
Case: PowerSO8
Mounting: SMT
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 0.25ms
Turn-on time: 2.5ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
On-state resistance: 0.15Ω
Max. operating current: 2A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 4kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
auf Bestellung 8 Stücke:
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7+11.47 EUR
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IXBH16N170 IXBH16N170 IXYS IXBH16N170_IXBT16N170.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 16A; 250W; TO247-3
Mounting: THT
Collector current: 16A
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Power dissipation: 250W
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™; FRED
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Turn-on time: 220ns
Gate charge: 72nC
Turn-off time: 940ns
auf Bestellung 330 Stücke:
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IXBH16N170A IXBH16N170A IXYS IXBH(T)16N170A.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO247-3
Mounting: THT
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 150W
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Turn-on time: 43ns
Gate charge: 65nC
Turn-off time: 370ns
Produkt ist nicht verfügbar
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DSEE30-12A DSEE30-12A IXYS DSEE30-12A.PDF Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-3; 165W
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Type of diode: rectifying
Mounting: THT
Case: TO247-3
Reverse recovery time: 30ns
Max. forward voltage: 2.5V
Load current: 30A
Power dissipation: 165W
Max. forward impulse current: 200A
Kind of package: tube
Max. off-state voltage: 1.2kV
Semiconductor structure: double series
auf Bestellung 2 Stücke:
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2+35.75 EUR
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MEE300-06DA IXYS PCN241015_Y4-M6 screw.pdf MEx300-06DA.pdf Category: Diode modules
Description: Module: diode; double series; 600V; If: 304A; Y4-M6; Ufmax: 1.19V
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Case: Y4-M6
Max. forward voltage: 1.19V
Load current: 304A
Max. forward impulse current: 2.4kA
Kind of package: bulk
Max. off-state voltage: 0.6kV
Semiconductor structure: double series
Produkt ist nicht verfügbar
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IXTQ50N20P IXTQ50N20P IXYS IXTA50N20P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
auf Bestellung 215 Stücke:
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30+3.68 EUR
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IXTP50N20P IXTP50N20P IXYS IXTA50N20P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO220AB
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
auf Bestellung 154 Stücke:
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IXTP50N25T IXTP50N25T IXYS IXTA(H,P,Q)50N25T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO220AB; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 166ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 287 Stücke:
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13+5.72 EUR
15+4.8 EUR
50+3.9 EUR
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IXTA50N20P IXTA50N20P IXYS IXTA50N20P-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
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IXTP50N20PM IXTP50N20PM IXYS IXTP50N20PM-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 20A; 90W; TO220FP
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20A
Power dissipation: 90W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
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IXTA50N25T IXTA50N25T IXYS IXTA(H,P,Q)50N25T.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO263; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO263
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 166ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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DSB15IM30UC-TRL IXYS dsb15im30uc-datasheet?assetguid=8aadd54f-0b28-4f5d-803e-b6fbf3b94b15 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63; SMD; 30V; 15A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 15A
Semiconductor structure: single diode
Case: DPAK; SC63
Max. forward voltage: 0.51V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Leakage current: 5mA
Produkt ist nicht verfügbar
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DPF240X400NA DPF240X400NA IXYS DPF240X400NA.pdf Category: Diode modules
Description: Module: diode; double independent; 400V; If: 120Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Electrical mounting: screw
Mechanical mounting: screw
Case: SOT227B
Kind of package: tube
Max. forward voltage: 1.06V
Load current: 120A x2
Max. load current: 240A
Max. off-state voltage: 0.4kV
Max. forward impulse current: 1.2kA
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
2+47.88 EUR
Mindestbestellmenge: 2
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LBA716S LBA716S IXYS lba716.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 60V AC; max. 60V DC
Mounting: SMT
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 0.4Ω
Max. operating current: 1A
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Case: DIP8
auf Bestellung 195 Stücke:
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50+6.88 EUR
100+6.54 EUR
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LCB716S LCB716S IXYS LCB716.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 500mA; max.60VAC
Contacts configuration: SPST-NC
Mounting: SMT
Operating temperature: -40...85°C
Turn-off time: 3ms
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 2Ω
Max. operating current: 0.5A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 3.75kV
Turn-on time: 3ms
Manufacturer series: OptoMOS
Case: DIP6
Kind of output: MOSFET
Type of relay: solid state
auf Bestellung 115 Stücke:
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9+8.72 EUR
50+7.99 EUR
100+6.84 EUR
Mindestbestellmenge: 9
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IXBH6N170 IXBH6N170_IXBT6N170.pdf
IXBH6N170
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 6A; 75W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate charge: 17nC
Turn-on time: 104ns
Turn-off time: 700ns
Collector current: 6A
Gate-emitter voltage: ±20V
Pulsed collector current: 36A
Power dissipation: 75W
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
Produkt ist nicht verfügbar
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IXFT340N075T2 IXFH(T)340N075T2.pdf
IXFT340N075T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 340A; 935W; TO268; 75ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 340A
Power dissipation: 935W
Case: TO268
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 75ns
Produkt ist nicht verfügbar
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IXFH180N20X3 IXF_180N20X3_HV.pdf 200VProductBrief.pdf
IXFH180N20X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 180A; 780W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Reverse recovery time: 94ns
Gate charge: 154nC
On-state resistance: 7.5mΩ
Drain current: 180A
Power dissipation: 780W
Technology: HiPerFET™; X3-Class
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.09 EUR
6+14.13 EUR
Mindestbestellmenge: 4
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IXTH80N20L IXTH(T)80N20L.pdf
IXTH80N20L
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 80A; 520W; TO247-3; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate charge: 180nC
On-state resistance: 32mΩ
Drain current: 80A
Power dissipation: 520W
Features of semiconductor devices: linear power mosfet
Produkt ist nicht verfügbar
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IXTT80N20L IXTH(T)80N20L.pdf
IXTT80N20L
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 80A; 520W; TO268; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Case: TO268
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate charge: 180nC
On-state resistance: 32mΩ
Drain current: 80A
Power dissipation: 520W
Features of semiconductor devices: linear power mosfet
Produkt ist nicht verfügbar
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IXFT180N20X3HV IXF_180N20X3_HV.pdf 200VProductBrief.pdf
IXFT180N20X3HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 180A; 780W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Case: TO268
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Reverse recovery time: 94ns
Gate charge: 154nC
On-state resistance: 7.5mΩ
Drain current: 180A
Power dissipation: 780W
Technology: HiPerFET™; X3-Class
Produkt ist nicht verfügbar
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CPC1303GRTR CPC1303GR.pdf
CPC1303GRTR
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 30V; SO4
Type of optocoupler: optocoupler
Mounting: SMD
Case: SO4
Kind of output: transistor
Turn-on time: 2µs
Turn-off time: 8µs
Number of channels: 1
Collector-emitter voltage: 30V
CTR@If: 200-2500%@0.2mA
Insulation voltage: 5kV
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.93 EUR
51+1.42 EUR
Mindestbestellmenge: 38
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IXFQ140N20X3 IXF_140N20X3_HV.pdf 200VProductBrief.pdf
IXFQ140N20X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO3P
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.96 EUR
7+11.48 EUR
10+10.31 EUR
30+10.18 EUR
Mindestbestellmenge: 6
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IXFH140N20X3 IXF_140N20X3_HV.pdf 200VProductBrief.pdf
IXFH140N20X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Technology: HiPerFET™; X3-Class
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.17 EUR
10+11.17 EUR
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IXFN140N20P description IXFN140N20P.pdf
IXFN140N20P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 115A; SOT227B; screw; Idm: 280A
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 115A
Pulsed drain current: 280A
Power dissipation: 680W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Gate charge: 240nC
Kind of channel: enhancement
Reverse recovery time: 150ns
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Technology: HiPerFET™; Polar™
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXFR140N20P IXFR140N20P.pdf
IXFR140N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 90A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFK140N20P IXFK140N20P.pdf
IXFK140N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 140A; 830W; TO264
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 240nC
On-state resistance: 18mΩ
Drain current: 140A
Drain-source voltage: 200V
Power dissipation: 830W
Kind of package: tube
Case: TO264
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFT140N20X3HV IXF_140N20X3_HV.pdf 200VProductBrief.pdf
IXFT140N20X3HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO268
Mounting: SMD
Drain current: 140A
Kind of channel: enhancement
Power dissipation: 520W
Technology: HiPerFET™; X3-Class
Type of transistor: N-MOSFET
Case: TO268
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 90ns
Gate charge: 127nC
On-state resistance: 9.6mΩ
Gate-source voltage: ±20V
Drain-source voltage: 200V
Produkt ist nicht verfügbar
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IXTK140N20P IXTK140N20P-DTE.pdf
IXTK140N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 140A; 800W; TO264
Mounting: THT
Technology: PolarHT™
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 180ns
Gate charge: 240nC
On-state resistance: 18mΩ
Gate-source voltage: ±20V
Drain current: 140A
Drain-source voltage: 200V
Power dissipation: 800W
Kind of package: tube
Case: TO264
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXGH48N60A3 IXGA(P,H)48N60A3.pdf
IXGH48N60A3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
Produkt ist nicht verfügbar
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IXGH48N60A3D1 IXGH48N60A3D1.pdf
IXGH48N60A3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
Produkt ist nicht verfügbar
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DSS16-0045AS-TRL media?resourcetype=datasheets&itemid=c16e9d10-00d5-476f-bb47-f1fb327bacda&filename=power_semiconductor_discrete_diode_dss16-0045as_datasheet.pdf
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 45V; 1.5A
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 45V
Load current: 1.5A
Semiconductor structure: single diode
Max. forward voltage: 0.67V
Max. forward impulse current: 280A
Kind of package: reel; tape
Capacitance: 710pF
Leakage current: 0.5mA
Produkt ist nicht verfügbar
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DSS16-01AS-TRL
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 16A
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 16A
Semiconductor structure: single diode
Max. forward voltage: 0.79V
Max. forward impulse current: 230A
Kind of package: reel; tape
Capacitance: 334pF
Leakage current: 0.5mA
Produkt ist nicht verfügbar
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IXFA22N65X2 IXF_22N65X2.pdf
IXFA22N65X2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 390W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Technology: HiPerFET™; X2-Class
Produkt ist nicht verfügbar
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DPS30I600HA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 450A; TO247-2; 120ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Kind of package: tube
Max. forward impulse current: 0.45kA
Case: TO247-2
Reverse recovery time: 120ns
Technology: FRED
Produkt ist nicht verfügbar
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IXFB44N100P IXFB44N100P.pdf
IXFB44N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 44A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 305nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+32.26 EUR
10+28.23 EUR
25+27.1 EUR
Mindestbestellmenge: 3
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DSP25-16A Littelfuse-Power-Semiconductors-DSP25-12A-Datasheet?assetguid=e596c328-6ce1-40f9-b9cf-5c4bf362b9c8
DSP25-16A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 25A; tube; Ifsm: 300A; TO247-3; 160W
Mounting: THT
Type of diode: rectifying
Kind of package: tube
Max. forward voltage: 1.23V
Load current: 25A
Power dissipation: 160W
Max. forward impulse current: 0.3kA
Max. off-state voltage: 1.6kV
Case: TO247-3
Semiconductor structure: double series
auf Bestellung 231 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.99 EUR
17+4.38 EUR
Mindestbestellmenge: 15
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DSP25-12A DSP25-12A.pdf
DSP25-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 25A; tube; Ifsm: 300A; TO247-3; 160W
Mounting: THT
Type of diode: rectifying
Kind of package: tube
Max. forward voltage: 1.16V
Load current: 25A
Power dissipation: 160W
Max. forward impulse current: 0.3kA
Max. off-state voltage: 1.2kV
Case: TO247-3
Semiconductor structure: double series
auf Bestellung 227 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.66 EUR
17+4.38 EUR
Mindestbestellmenge: 16
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DSP25-16AR Littelfuse-Power-Semiconductors-DSP25-12A-Datasheet?assetguid=e596c328-6ce1-40f9-b9cf-5c4bf362b9c8
DSP25-16AR
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 28Ax2; tube; Ifsm: 300A; ISOPLUS247™
Mounting: THT
Type of diode: rectifying
Kind of package: tube
Max. forward voltage: 1.23V
Load current: 28A x2
Power dissipation: 100W
Max. forward impulse current: 0.3kA
Max. off-state voltage: 1.6kV
Case: ISOPLUS247™
Semiconductor structure: double series
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.31 EUR
10+8.95 EUR
Mindestbestellmenge: 7
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DSP25-12AT-TUB DSP25-12AT.pdf
DSP25-12AT-TUB
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A
Mounting: SMD
Type of diode: rectifying
Max. forward voltage: 1.16V
Load current: 25A
Power dissipation: 160W
Max. forward impulse current: 0.3kA
Max. off-state voltage: 1.2kV
Case: D3PAK
Semiconductor structure: double series
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.68 EUR
10+7.82 EUR
11+6.91 EUR
30+6.32 EUR
Mindestbestellmenge: 9
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DSP25-16AT-TUB DSP25-16AT.pdf
DSP25-16AT-TUB
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A
Mounting: SMD
Type of diode: rectifying
Max. forward voltage: 1.16V
Load current: 25A
Power dissipation: 160W
Max. forward impulse current: 0.3kA
Max. off-state voltage: 1.6kV
Case: D3PAK
Semiconductor structure: double series
Produkt ist nicht verfügbar
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DSP25-12AT-TRL media?resourcetype=datasheets&itemid=e596c328-6ce1-40f9-b9cf-5c4bf362b9c8&filename=Littelfuse-Power-Semiconductors-DSP25-12A-Datasheet
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; D3PAK,TO268AA; reel,tape
Mounting: SMD
Type of diode: rectifying
Kind of package: reel; tape
Case: D3PAK; TO268AA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DSP25-16AT-TRL media?resourcetype=datasheets&itemid=e596c328-6ce1-40f9-b9cf-5c4bf362b9c8&filename=Littelfuse-Power-Semiconductors-DSP25-12A-Datasheet
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; D3PAK,TO268AA; reel,tape
Mounting: SMD
Type of diode: rectifying
Kind of package: reel; tape
Case: D3PAK; TO268AA
Produkt ist nicht verfügbar
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IXFR24N100Q3 IXFR24N100Q3.pdf
IXFR24N100Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 500W; ISOPLUS247™
Type of transistor: N-MOSFET
Power dissipation: 500W
Case: ISOPLUS247™
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Drain-source voltage: 1kV
Polarisation: unipolar
Kind of channel: enhancement
On-state resistance: 0.49Ω
Drain current: 18A
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+31.95 EUR
10+28.87 EUR
Mindestbestellmenge: 3
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IXFN24N100 description IXFN24N100-DTE.pdf
IXFN24N100
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 24A; SOT227B; screw; Idm: 96A; 568W
Power dissipation: 568W
Case: SOT227B
Gate charge: 250nC
Gate-source voltage: ±30V
Pulsed drain current: 96A
Drain-source voltage: 1kV
Polarisation: unipolar
Technology: HiPerFET™
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Kind of channel: enhancement
Reverse recovery time: 250ns
On-state resistance: 390mΩ
Drain current: 24A
Produkt ist nicht verfügbar
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IXFK24N100Q3 IXFK(X)24N100Q3.pdf
IXFK24N100Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 1000W; TO264
Type of transistor: N-MOSFET
Power dissipation: 1kW
Case: TO264
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Drain-source voltage: 1kV
Polarisation: unipolar
Kind of channel: enhancement
On-state resistance: 440mΩ
Drain current: 24A
Produkt ist nicht verfügbar
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IXTX24N100 IXTX24N100.pdf
IXTX24N100
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 568W; PLUS247™; 850ns
Type of transistor: N-MOSFET
Power dissipation: 568W
Case: PLUS247™
Mounting: THT
Gate charge: 267nC
Kind of package: tube
Drain-source voltage: 1kV
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Kind of channel: enhancement
Reverse recovery time: 850ns
On-state resistance: 0.4Ω
Drain current: 24A
Produkt ist nicht verfügbar
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IXFX24N100Q3 IXFK(X)24N100Q3.pdf
IXFX24N100Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 1000W; PLUS247™
Type of transistor: N-MOSFET
Power dissipation: 1kW
Case: PLUS247™
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Drain-source voltage: 1kV
Polarisation: unipolar
Kind of channel: enhancement
On-state resistance: 440mΩ
Drain current: 24A
Produkt ist nicht verfügbar
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IXYX120N120C3 IXYK(x)120N120C3.pdf
IXYX120N120C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Mounting: THT
Turn-on time: 105ns
Turn-off time: 346ns
Gate charge: 412nC
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 700A
Power dissipation: 1.5kW
Collector-emitter voltage: 1.2kV
Case: PLUS247™
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+38.91 EUR
3+36.57 EUR
Mindestbestellmenge: 2
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IXYX120N120B3 IXYX120N120B3.pdf
IXYX120N120B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Mounting: THT
Turn-on time: 84ns
Turn-off time: 826ns
Gate charge: 400nC
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 800A
Power dissipation: 1.5kW
Collector-emitter voltage: 1.2kV
Case: PLUS247™
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+40.27 EUR
3+36.26 EUR
10+32.03 EUR
Mindestbestellmenge: 2
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IXTX120P20T IXT_120P20T.pdf
IXTX120P20T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W
Mounting: THT
Case: PLUS247™
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -120A
Reverse recovery time: 300ns
Gate charge: 740nC
On-state resistance: 30mΩ
Gate-source voltage: ±15V
Power dissipation: 1.04kW
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+28.6 EUR
10+27.04 EUR
Mindestbestellmenge: 3
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DPG10I200PA Littelfuse-Power-Semiconductors-DPG10I200PA-Datasheet?assetguid=EC448438-07B9-4C8C-BA5D-4A6822B3E045
DPG10I200PA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 140A; TO220AC; 65W
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220AC
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 35ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 1.27V
Load current: 10A
Power dissipation: 65W
Max. forward impulse current: 140A
Max. off-state voltage: 200V
auf Bestellung 190 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.9 EUR
44+1.63 EUR
51+1.42 EUR
100+1.32 EUR
Mindestbestellmenge: 38
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DPG10I400PA DPG10I400PA.pdf
DPG10I400PA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 150A; TO220AC; 65W
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220AC
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 45ns
Max. forward voltage: 1.03V
Load current: 10A
Power dissipation: 65W
Max. forward impulse current: 150A
Max. off-state voltage: 0.4kV
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.36 EUR
34+2.14 EUR
41+1.77 EUR
50+1.44 EUR
Mindestbestellmenge: 31
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DPG10P400PJ DPG10P400PJ.pdf
DPG10P400PJ
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 130A; ISOPLUS220™
Mounting: THT
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: ISOPLUS220™
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 45ns
Max. forward voltage: 1.28V
Load current: 10A
Power dissipation: 60W
Max. forward impulse current: 130A
Max. off-state voltage: 0.4kV
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.64 EUR
12+5.96 EUR
14+5.28 EUR
Mindestbestellmenge: 11
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DPG10I300PA DPG10I300PA.pdf
DPG10I300PA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10A; tube; Ifsm: 140A; TO220AC; 65W
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220AC
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 35ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 1.27V
Load current: 10A
Power dissipation: 65W
Max. forward impulse current: 140A
Max. off-state voltage: 300V
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.1 EUR
Mindestbestellmenge: 23
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DPG10I200PM DPG10I200PM.pdf
DPG10I200PM
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 140A; TO220FP-2; 35W
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220FP-2
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 35ns
Max. forward voltage: 1.27V
Load current: 10A
Power dissipation: 35W
Max. forward impulse current: 140A
Max. off-state voltage: 200V
auf Bestellung 56 Stücke:
Lieferzeit 14-21 Tag (e)
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35+2.07 EUR
56+1.27 EUR
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DPG10I400PM DPG10I400PM.pdf
DPG10I400PM
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 150A; TO220FP-2; 35W
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220FP-2
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 45ns
Max. forward voltage: 1.32V
Load current: 10A
Power dissipation: 35W
Max. forward impulse current: 150A
Max. off-state voltage: 0.4kV
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.79 EUR
32+2.26 EUR
39+1.84 EUR
Mindestbestellmenge: 26
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DPG10I600APA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; tube; TO220AB; FRED
Mounting: THT
Technology: FRED
Case: TO220AB
Type of diode: rectifying
Kind of package: tube
Produkt ist nicht verfügbar
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DPG10IM300UC-TRL Littelfuse-Power-Semiconductors-DPG10IM300UC-Datasheet?assetguid=4F368F7B-B10F-46AB-A8F1-CBCA0C2C4559
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; TO252; FRED; reel,tape
Mounting: SMD
Technology: FRED
Case: TO252
Type of diode: rectifying
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DPG10IM300UC-TUB
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; TO252; FRED; tube
Mounting: SMD
Technology: FRED
Case: TO252
Type of diode: rectifying
Kind of package: tube
Produkt ist nicht verfügbar
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CPC2907B CPC2907B.pdf
CPC2907B
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 2000mA; OptoMOS
Case: PowerSO8
Mounting: SMT
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 0.25ms
Turn-on time: 2.5ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
On-state resistance: 0.15Ω
Max. operating current: 2A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 4kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.47 EUR
Mindestbestellmenge: 7
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IXBH16N170 IXBH16N170_IXBT16N170.pdf
IXBH16N170
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 16A; 250W; TO247-3
Mounting: THT
Collector current: 16A
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Power dissipation: 250W
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™; FRED
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Turn-on time: 220ns
Gate charge: 72nC
Turn-off time: 940ns
auf Bestellung 330 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.7 EUR
5+15.9 EUR
10+14.39 EUR
Mindestbestellmenge: 4
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IXBH16N170A IXBH(T)16N170A.pdf
IXBH16N170A
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO247-3
Mounting: THT
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 150W
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Turn-on time: 43ns
Gate charge: 65nC
Turn-off time: 370ns
Produkt ist nicht verfügbar
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DSEE30-12A DSEE30-12A.PDF
DSEE30-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-3; 165W
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Type of diode: rectifying
Mounting: THT
Case: TO247-3
Reverse recovery time: 30ns
Max. forward voltage: 2.5V
Load current: 30A
Power dissipation: 165W
Max. forward impulse current: 200A
Kind of package: tube
Max. off-state voltage: 1.2kV
Semiconductor structure: double series
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
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MEE300-06DA PCN241015_Y4-M6 screw.pdf MEx300-06DA.pdf
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 600V; If: 304A; Y4-M6; Ufmax: 1.19V
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Case: Y4-M6
Max. forward voltage: 1.19V
Load current: 304A
Max. forward impulse current: 2.4kA
Kind of package: bulk
Max. off-state voltage: 0.6kV
Semiconductor structure: double series
Produkt ist nicht verfügbar
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IXTQ50N20P IXTA50N20P-DTE.pdf
IXTQ50N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
auf Bestellung 215 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.78 EUR
18+4.12 EUR
30+3.68 EUR
60+3.59 EUR
Mindestbestellmenge: 13
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IXTP50N20P IXTA50N20P-DTE.pdf
IXTP50N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO220AB
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
auf Bestellung 154 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.89 EUR
18+4.02 EUR
50+3.55 EUR
100+3.35 EUR
Mindestbestellmenge: 15
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IXTP50N25T IXTA(H,P,Q)50N25T.pdf
IXTP50N25T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO220AB; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 166ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 287 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.72 EUR
15+4.8 EUR
50+3.9 EUR
Mindestbestellmenge: 13
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IXTA50N20P IXTA50N20P-DTE.pdf
IXTA50N20P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
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IXTP50N20PM IXTP50N20PM-DTE.pdf
IXTP50N20PM
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 20A; 90W; TO220FP
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20A
Power dissipation: 90W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
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IXTA50N25T IXTA(H,P,Q)50N25T.pdf
IXTA50N25T
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO263; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO263
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 166ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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DSB15IM30UC-TRL dsb15im30uc-datasheet?assetguid=8aadd54f-0b28-4f5d-803e-b6fbf3b94b15
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63; SMD; 30V; 15A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 15A
Semiconductor structure: single diode
Case: DPAK; SC63
Max. forward voltage: 0.51V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Leakage current: 5mA
Produkt ist nicht verfügbar
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DPF240X400NA DPF240X400NA.pdf
DPF240X400NA
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 400V; If: 120Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Electrical mounting: screw
Mechanical mounting: screw
Case: SOT227B
Kind of package: tube
Max. forward voltage: 1.06V
Load current: 120A x2
Max. load current: 240A
Max. off-state voltage: 0.4kV
Max. forward impulse current: 1.2kA
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+47.88 EUR
Mindestbestellmenge: 2
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LBA716S lba716.pdf
LBA716S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 60V AC; max. 60V DC
Mounting: SMT
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 0.4Ω
Max. operating current: 1A
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Case: DIP8
auf Bestellung 195 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.07 EUR
10+8.49 EUR
50+6.88 EUR
100+6.54 EUR
Mindestbestellmenge: 8
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LCB716S LCB716.pdf
LCB716S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 500mA; max.60VAC
Contacts configuration: SPST-NC
Mounting: SMT
Operating temperature: -40...85°C
Turn-off time: 3ms
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 2Ω
Max. operating current: 0.5A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 3.75kV
Turn-on time: 3ms
Manufacturer series: OptoMOS
Case: DIP6
Kind of output: MOSFET
Type of relay: solid state
auf Bestellung 115 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.72 EUR
50+7.99 EUR
100+6.84 EUR
Mindestbestellmenge: 9
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