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IXKH20N60C5 IXKH20N60C5 IXYS IXK(H)20N60C5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO247-3
Type of transistor: N-MOSFET
Power dissipation: 208W
Case: TO247-3
Mounting: THT
Kind of package: tube
On-state resistance: 0.2Ω
Gate charge: 32nC
Polarisation: unipolar
Features of semiconductor devices: super junction coolmos
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 600V
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IXTP60N20T IXTP60N20T IXYS IXTA(P,Q)60N20T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO220AB; 118ns
Mounting: THT
Power dissipation: 500W
Gate charge: 73nC
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 60A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 40mΩ
Reverse recovery time: 118ns
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IXTQ60N20T IXTQ60N20T IXYS IXTA(P,Q)60N20T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO3P; 118ns
Features of semiconductor devices: thrench gate power mosfet
Drain current: 60A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO3P
On-state resistance: 40mΩ
Reverse recovery time: 118ns
Mounting: THT
Power dissipation: 500W
Gate charge: 73nC
Polarisation: unipolar
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IXFT50N60P3 IXFT50N60P3 IXYS IXFH(T,Q)50N60P3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO268
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Case: TO268
Mounting: SMD
Kind of package: tube
Drain-source voltage: 600V
On-state resistance: 0.16Ω
Gate charge: 94nC
Polarisation: unipolar
Drain current: 50A
Kind of channel: enhancement
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IXFT50N60X IXFT50N60X IXYS IXFH(Q,T)50N60X.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 660W; TO268; 195ns
Type of transistor: N-MOSFET
Power dissipation: 660W
Case: TO268
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Drain-source voltage: 600V
On-state resistance: 73mΩ
Reverse recovery time: 195ns
Gate charge: 116nC
Polarisation: unipolar
Drain current: 50A
Kind of channel: enhancement
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IXXA50N60B3 IXXA50N60B3 IXYS IXXA(p,h)50N60B3.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO263
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO263
Gate-emitter voltage: ±20V
Mounting: SMD
Kind of package: tube
Pulsed collector current: 200A
Turn-on time: 75ns
Turn-off time: 320ns
Gate charge: 70nC
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IXXH50N60B3 IXXH50N60B3 IXYS IXXA(p,h)50N60B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 200A
Turn-on time: 75ns
Turn-off time: 320ns
Gate charge: 70nC
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IXXH50N60B3D1 IXXH50N60B3D1 IXYS IXXH50N60B3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 200A
Turn-on time: 75ns
Turn-off time: 320ns
Gate charge: 70nC
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IXXH50N60C3 IXXH50N60C3 IXYS IXXH50N60C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 200A
Turn-on time: 69ns
Turn-off time: 170ns
Gate charge: 64nC
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IXXH50N60C3D1 IXXH50N60C3D1 IXYS IXXH50N60C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 200A
Turn-on time: 69ns
Turn-off time: 170ns
Gate charge: 64nC
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IXXP50N60B3 IXXP50N60B3 IXYS IXXA(p,h)50N60B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 200A
Turn-on time: 75ns
Turn-off time: 320ns
Gate charge: 70nC
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IXXH150N60C3 IXXH150N60C3 IXYS IXXH150N60C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 150A; 1.36kW; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 150A
Power dissipation: 1.36kW
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 700A
Turn-on time: 0.1µs
Turn-off time: 230ns
Gate charge: 200nC
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IXYN150N60B3 IXYN150N60B3 IXYS IXYN150N60B3.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 140A; SOT227B
Technology: GenX3™; XPT™
Collector current: 140A
Power dissipation: 830W
Case: SOT227B
Gate-emitter voltage: ±20V
Mechanical mounting: screw
Pulsed collector current: 750A
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Semiconductor structure: single transistor
Type of semiconductor module: IGBT
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IXYP20N65C3D1 IXYP20N65C3D1 IXYS IXY_20N65C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 200W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 105A
Turn-on time: 51ns
Turn-off time: 132ns
Gate charge: 30nC
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IXYP20N65C3D1M IXYP20N65C3D1M IXYS IXYP20N65C3D1M.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 9A; 50W; TO220FP
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 50W
Case: TO220FP
Mounting: THT
Kind of package: tube
Collector current: 9A
Collector-emitter voltage: 650V
Gate charge: 30nC
Pulsed collector current: 105A
Turn-on time: 51ns
Turn-off time: 132ns
Gate-emitter voltage: ±20V
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IXFK120N65X2 IXFK120N65X2 IXYS IXFK120N65X2_IXFX120N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 120A; 1250W; TO264
Mounting: THT
Power dissipation: 1.25kW
Gate charge: 240nC
Polarisation: unipolar
Technology: HiPerFET™; X2-Class
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO264
On-state resistance: 24mΩ
Reverse recovery time: 220ns
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IXTX120N65X2 IXTX120N65X2 IXYS IXT_120N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 120A; 1250W; PLUS247™; 505ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 120A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 505ns
Features of semiconductor devices: ultra junction x-class
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IXFK78N50P3 IXFK78N50P3 IXYS IXFK(X)78N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 78A; 1130W; TO264
Mounting: THT
Power dissipation: 1.13kW
Gate charge: 147nC
Polarisation: unipolar
Drain current: 78A
Kind of channel: enhancement
Drain-source voltage: 500V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 68mΩ
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IXFK98N50P3 IXFK98N50P3 IXYS IXFK(X)98N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 98A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 98A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
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IXFX78N50P3 IXFX78N50P3 IXYS IXFK(X)78N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 78A; 1130W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 78A
Power dissipation: 1.13kW
Case: PLUS247™
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Kind of channel: enhancement
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IXFX98N50P3 IXFX98N50P3 IXYS IXFK(X)98N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 98A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 98A
Power dissipation: 1.3kW
Case: PLUS247™
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
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DSB15IM45IB DSB15IM45IB IXYS DSB15IM45IB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; TO262; Ufmax: 0.55V; 70W
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: single diode
Case: TO262
Max. forward voltage: 0.55V
Max. forward impulse current: 340A
Power dissipation: 70W
Kind of package: tube
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IXFN210N30P3 IXFN210N30P3 IXYS IXFN210N30P3.pdf Category: Transistor modules
Description: Module; single transistor; 300V; 192A; SOT227B; screw; Idm: 550A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 192A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 14.5mΩ
Pulsed drain current: 550A
Power dissipation: 1.5kW
Technology: HiPerFET™; Polar3™
Kind of channel: enhancement
Gate charge: 268nC
Reverse recovery time: 250ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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IXFX27N80Q IXFX27N80Q IXYS IXFK(X)27N80Q.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Power dissipation: 481W
Case: PLUS247™
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 170nC
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IXYA50N65C3 IXYA50N65C3 IXYS IXY_50N65C3.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO263-2
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO263-2
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: SMD
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
Technology: GenX3™; Planar; XPT™
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IXYH50N65C3 IXYH50N65C3 IXYS IXY_50N65C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
Technology: GenX3™; Planar; XPT™
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IXGX320N60B3 IXGX320N60B3 IXYS IXGK(x)320N60B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 320A; 1.7kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 1.7kW
Case: PLUS247™
Mounting: THT
Kind of package: tube
Gate charge: 585nC
Pulsed collector current: 1.2kA
Turn-on time: 107ns
Turn-off time: 595ns
Gate-emitter voltage: ±20V
Collector current: 320A
Collector-emitter voltage: 600V
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IXFA34N65X2 IXFA34N65X2 IXYS IXFA34N65X2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 164ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Case: TO263
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 164ns
Power dissipation: 540W
Gate charge: 56nC
Features of semiconductor devices: ultra junction x-class
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IXFH34N65X2 IXFH34N65X2 IXYS IXF_34N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 540W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 164ns
Power dissipation: 540W
Gate charge: 56nC
Technology: HiPerFET™; X2-Class
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IXTH34N65X2 IXTH34N65X2 IXYS IXT_34N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO247-3; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Case: TO247-3
On-state resistance: 96mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Power dissipation: 540W
Gate charge: 54nC
Features of semiconductor devices: ultra junction x-class
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IXTP24N65X2 IXTP24N65X2 IXYS IXT_24N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Power dissipation: 390W
Gate charge: 36nC
Technology: X2-Class
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IXTP90N055T2 IXTP90N055T2 IXYS IXTA(I,P,Y)90N055T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 90A; 150W; TO220AB; 37ns
Mounting: THT
Power dissipation: 150W
Gate charge: 42nC
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 90A
Kind of channel: enhancement
Drain-source voltage: 55V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 8.4mΩ
Reverse recovery time: 37ns
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IXTR90P20P IXTR90P20P IXYS IXTR90P20P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -53A; 312W; 315ns
Mounting: THT
Power dissipation: 312W
Gate charge: 205nC
Polarisation: unipolar
Technology: PolarP™
Drain current: -53A
Kind of channel: enhancement
Drain-source voltage: -200V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: ISOPLUS247™
On-state resistance: 48mΩ
Reverse recovery time: 315ns
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IXTA05N100HV IXTA05N100HV IXYS IXTA(P)05N100_HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263HV; 710ns
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO263HV
On-state resistance: 17Ω
Reverse recovery time: 710ns
Power dissipation: 40W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 0.75A
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IXFN220N20X3 IXFN220N20X3 IXYS IXFN220N20X3.pdf 200VProductBrief.pdf Category: Transistor modules
Description: Module; single transistor; 200V; 160A; SOT227B; screw; Idm: 500A
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±30V
Reverse recovery time: 128ns
Gate charge: 204nC
On-state resistance: 6.2mΩ
Technology: HiPerFET™; X3-Class
Drain current: 160A
Pulsed drain current: 500A
Drain-source voltage: 200V
Power dissipation: 390W
Type of semiconductor module: MOSFET transistor
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IXTX8N150L IXTX8N150L IXYS IXTK(X)8N150L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 8A; 700W; PLUS247™; 1.7us
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Type of transistor: N-MOSFET
Case: PLUS247™
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 250nC
Reverse recovery time: 1.7µs
On-state resistance: 3.6Ω
Power dissipation: 700W
Drain current: 8A
Drain-source voltage: 1.5kV
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IXTP24N65X2M IXTP24N65X2M IXYS IXTP24N65X2M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 37W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Power dissipation: 37W
Gate charge: 36nC
Technology: X2-Class
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IXGH36N60B3 IXGH36N60B3 IXYS IXGH36N60B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 200A
Turn-on time: 45ns
Turn-off time: 350ns
Gate charge: 80nC
Technology: GenX3™; PT
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IXGH36N60B3C1 IXGH36N60B3C1 IXYS IXGx36N60B3C1-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 200A
Turn-on time: 47ns
Turn-off time: 350ns
Gate charge: 80nC
Technology: GenX3™; PT
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IXFL82N60P IXFL82N60P IXYS IXFL82N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 55A; 625W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 55A
Case: ISOPLUS264™
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 240nC
Kind of channel: enhancement
Power dissipation: 625W
Kind of package: tube
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IXFN50N120SK IXFN50N120SK IXYS IXFN50N120SK.pdf Category: Transistor modules
Description: Module; single transistor; 1.2kV; 48A; SOT227B; screw; SiC; 115nC
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 48A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 50mΩ
Technology: SiC
Gate-source voltage: -5...20V
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 54ns
Gate charge: 115nC
Kind of channel: enhancement
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IXTQ34N65X2M IXTQ34N65X2M IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixtq34n65x2m_datasheet.pdf?assetguid=9e2804bf-85d4-45e2-ba6f-de4ee48d3cec Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; Idm: 48A; 40W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 96mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 48A
Power dissipation: 40W
Gate charge: 54nC
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IXFB82N60Q3 IXFB82N60Q3 IXYS IXFB82N60Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 600V; 82A; 1560W; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 82A
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 275nC
Kind of channel: enhancement
Power dissipation: 1.56kW
Technology: HiPerFET™; Q3-Class
Kind of package: tube
Reverse recovery time: 300ns
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IXFN66N85X IXFN66N85X IXYS IXFN66N85X.pdf Category: Transistor modules
Description: Module; single transistor; 850V; 65A; SOT227B; screw; Idm: 140A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 850V
Drain current: 65A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 65mΩ
Pulsed drain current: 140A
Power dissipation: 830W
Technology: HiPerFET™; X-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate charge: 230nC
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IXFP26N65X2 IXFP26N65X2 IXYS 238_K248734.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26A; Idm: 36A; 460W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 36A
Power dissipation: 460W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
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IXFN40N110P IXFN40N110P IXYS IXFN40N110P.pdf Category: Transistor modules
Description: Module; single transistor; 1.1kV; 34A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.1kV
Drain current: 34A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.26Ω
Pulsed drain current: 100A
Power dissipation: 890W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Kind of channel: enhancement
Reverse recovery time: 300ns
Gate charge: 310nC
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IXFN40N110Q3 IXFN40N110Q3 IXYS IXFN40N110Q3.pdf Category: Transistor modules
Description: Module; single transistor; 1.1kV; 35A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.1kV
Drain current: 35A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.26Ω
Pulsed drain current: 100A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Kind of channel: enhancement
Reverse recovery time: 434ns
Gate charge: 300nC
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IXFH26N60P IXFH26N60P IXYS IXFH26N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 26A; 460W; TO247-3
Type of transistor: N-MOSFET
Power dissipation: 460W
Case: TO247-3
Mounting: THT
Kind of package: tube
Drain current: 26A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Reverse recovery time: 200ns
Gate charge: 72nC
Polarisation: unipolar
Technology: PolarHV™
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IXFK64N60P3 IXFK64N60P3 IXYS IXF_64N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 64A; 1130W; TO264
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.13kW
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
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IXFH28N60P3 IXFH28N60P3 IXYS IXFH(Q)28N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; 695W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Case: TO247-3
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 695W
Gate charge: 50nC
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IXFB82N60P IXFB82N60P IXYS IXFB82N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 82A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 82A
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 240nC
Kind of channel: enhancement
Power dissipation: 1.25kW
Technology: HiPerFET™; Polar™
Kind of package: tube
Reverse recovery time: 200ns
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IXFH36N60P IXFH36N60P IXYS IXFH(K,T)36N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO247-3
Type of transistor: N-MOSFET
Power dissipation: 650W
Case: TO247-3
Mounting: THT
Kind of package: tube
Drain current: 36A
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 0.19Ω
Gate charge: 102nC
Polarisation: unipolar
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IXFN180N25T IXFN180N25T IXYS IXFN180N25T.pdf Category: Transistor modules
Description: Module; single transistor; 250V; 168A; SOT227B; screw; Idm: 500A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 250V
Drain current: 168A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 12.9mΩ
Pulsed drain current: 500A
Power dissipation: 900W
Technology: GigaMOS™
Gate-source voltage: ±30V
Mechanical mounting: screw
Kind of channel: enhancement
Reverse recovery time: 200ns
Gate charge: 364nC
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IXFA34N65X3 IXFA34N65X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfa34n65x3-datasheet?assetguid=7bd01bfc-f3d8-4755-8e6c-5e250cb5176f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Pulsed drain current: 48A
Power dissipation: 446W
Gate charge: 29nC
Technology: HiPerFET™; X3-Class
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IXFH34N65X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh34n65x3-datasheet?assetguid=965e45cd-8715-4cf1-b85d-adaafdfc5ec2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Pulsed drain current: 48A
Power dissipation: 446W
Gate charge: 29nC
Technology: HiPerFET™; X3-Class
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IXKH47N60C IXKH47N60C IXYS IXKH47N60C.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 290W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 250nC
Features of semiconductor devices: super junction coolmos
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IXFH22N50P IXFH22N50P IXYS IXFH22N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 350W
Gate charge: 50nC
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IXFH40N50Q IXFH40N50Q IXYS IXFH40N50Q.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
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IXTH40N50L2 IXTH40N50L2 IXYS IXTH(T,Q)40N50L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
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IXTQ40N50L2 IXTQ40N50L2 IXYS IXTH(T,Q)40N50L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO3P
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
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IXKH20N60C5 IXK(H)20N60C5.pdf
IXKH20N60C5
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO247-3
Type of transistor: N-MOSFET
Power dissipation: 208W
Case: TO247-3
Mounting: THT
Kind of package: tube
On-state resistance: 0.2Ω
Gate charge: 32nC
Polarisation: unipolar
Features of semiconductor devices: super junction coolmos
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 600V
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IXTP60N20T IXTA(P,Q)60N20T.pdf
IXTP60N20T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO220AB; 118ns
Mounting: THT
Power dissipation: 500W
Gate charge: 73nC
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 60A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 40mΩ
Reverse recovery time: 118ns
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IXTQ60N20T IXTA(P,Q)60N20T.pdf
IXTQ60N20T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO3P; 118ns
Features of semiconductor devices: thrench gate power mosfet
Drain current: 60A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO3P
On-state resistance: 40mΩ
Reverse recovery time: 118ns
Mounting: THT
Power dissipation: 500W
Gate charge: 73nC
Polarisation: unipolar
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IXFT50N60P3 IXFH(T,Q)50N60P3.pdf
IXFT50N60P3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO268
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Case: TO268
Mounting: SMD
Kind of package: tube
Drain-source voltage: 600V
On-state resistance: 0.16Ω
Gate charge: 94nC
Polarisation: unipolar
Drain current: 50A
Kind of channel: enhancement
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IXFT50N60X IXFH(Q,T)50N60X.pdf
IXFT50N60X
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 660W; TO268; 195ns
Type of transistor: N-MOSFET
Power dissipation: 660W
Case: TO268
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Drain-source voltage: 600V
On-state resistance: 73mΩ
Reverse recovery time: 195ns
Gate charge: 116nC
Polarisation: unipolar
Drain current: 50A
Kind of channel: enhancement
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IXXA50N60B3 IXXA(p,h)50N60B3.pdf
IXXA50N60B3
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO263
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO263
Gate-emitter voltage: ±20V
Mounting: SMD
Kind of package: tube
Pulsed collector current: 200A
Turn-on time: 75ns
Turn-off time: 320ns
Gate charge: 70nC
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IXXH50N60B3 IXXA(p,h)50N60B3.pdf
IXXH50N60B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 200A
Turn-on time: 75ns
Turn-off time: 320ns
Gate charge: 70nC
Produkt ist nicht verfügbar
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IXXH50N60B3D1 IXXH50N60B3D1.pdf
IXXH50N60B3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 200A
Turn-on time: 75ns
Turn-off time: 320ns
Gate charge: 70nC
Produkt ist nicht verfügbar
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IXXH50N60C3 IXXH50N60C3.pdf
IXXH50N60C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 200A
Turn-on time: 69ns
Turn-off time: 170ns
Gate charge: 64nC
Produkt ist nicht verfügbar
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IXXH50N60C3D1 IXXH50N60C3D1.pdf
IXXH50N60C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 200A
Turn-on time: 69ns
Turn-off time: 170ns
Gate charge: 64nC
Produkt ist nicht verfügbar
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IXXP50N60B3 IXXA(p,h)50N60B3.pdf
IXXP50N60B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 200A
Turn-on time: 75ns
Turn-off time: 320ns
Gate charge: 70nC
Produkt ist nicht verfügbar
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IXXH150N60C3 IXXH150N60C3.pdf
IXXH150N60C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 150A; 1.36kW; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 150A
Power dissipation: 1.36kW
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 700A
Turn-on time: 0.1µs
Turn-off time: 230ns
Gate charge: 200nC
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IXYN150N60B3 IXYN150N60B3.pdf
IXYN150N60B3
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 140A; SOT227B
Technology: GenX3™; XPT™
Collector current: 140A
Power dissipation: 830W
Case: SOT227B
Gate-emitter voltage: ±20V
Mechanical mounting: screw
Pulsed collector current: 750A
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Semiconductor structure: single transistor
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
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IXYP20N65C3D1 IXY_20N65C3D1.pdf
IXYP20N65C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 200W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 105A
Turn-on time: 51ns
Turn-off time: 132ns
Gate charge: 30nC
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IXYP20N65C3D1M IXYP20N65C3D1M.pdf
IXYP20N65C3D1M
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 9A; 50W; TO220FP
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 50W
Case: TO220FP
Mounting: THT
Kind of package: tube
Collector current: 9A
Collector-emitter voltage: 650V
Gate charge: 30nC
Pulsed collector current: 105A
Turn-on time: 51ns
Turn-off time: 132ns
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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IXFK120N65X2 IXFK120N65X2_IXFX120N65X2.pdf
IXFK120N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 120A; 1250W; TO264
Mounting: THT
Power dissipation: 1.25kW
Gate charge: 240nC
Polarisation: unipolar
Technology: HiPerFET™; X2-Class
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO264
On-state resistance: 24mΩ
Reverse recovery time: 220ns
Produkt ist nicht verfügbar
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IXTX120N65X2 IXT_120N65X2.pdf
IXTX120N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 120A; 1250W; PLUS247™; 505ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 120A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 505ns
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
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IXFK78N50P3 IXFK(X)78N50P3.pdf
IXFK78N50P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 78A; 1130W; TO264
Mounting: THT
Power dissipation: 1.13kW
Gate charge: 147nC
Polarisation: unipolar
Drain current: 78A
Kind of channel: enhancement
Drain-source voltage: 500V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 68mΩ
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IXFK98N50P3 IXFK(X)98N50P3.pdf
IXFK98N50P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 98A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 98A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFX78N50P3 IXFK(X)78N50P3.pdf
IXFX78N50P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 78A; 1130W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 78A
Power dissipation: 1.13kW
Case: PLUS247™
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFX98N50P3 IXFK(X)98N50P3.pdf
IXFX98N50P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 98A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 98A
Power dissipation: 1.3kW
Case: PLUS247™
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DSB15IM45IB DSB15IM45IB.pdf
DSB15IM45IB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; TO262; Ufmax: 0.55V; 70W
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: single diode
Case: TO262
Max. forward voltage: 0.55V
Max. forward impulse current: 340A
Power dissipation: 70W
Kind of package: tube
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IXFN210N30P3 IXFN210N30P3.pdf
IXFN210N30P3
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 300V; 192A; SOT227B; screw; Idm: 550A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 192A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 14.5mΩ
Pulsed drain current: 550A
Power dissipation: 1.5kW
Technology: HiPerFET™; Polar3™
Kind of channel: enhancement
Gate charge: 268nC
Reverse recovery time: 250ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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IXFX27N80Q IXFK(X)27N80Q.pdf
IXFX27N80Q
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Power dissipation: 481W
Case: PLUS247™
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 170nC
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IXYA50N65C3 IXY_50N65C3.pdf
IXYA50N65C3
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO263-2
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO263-2
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: SMD
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
Technology: GenX3™; Planar; XPT™
Produkt ist nicht verfügbar
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IXYH50N65C3 IXY_50N65C3.pdf
IXYH50N65C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
Technology: GenX3™; Planar; XPT™
Produkt ist nicht verfügbar
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IXGX320N60B3 IXGK(x)320N60B3.pdf
IXGX320N60B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 320A; 1.7kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 1.7kW
Case: PLUS247™
Mounting: THT
Kind of package: tube
Gate charge: 585nC
Pulsed collector current: 1.2kA
Turn-on time: 107ns
Turn-off time: 595ns
Gate-emitter voltage: ±20V
Collector current: 320A
Collector-emitter voltage: 600V
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IXFA34N65X2 IXFA34N65X2.pdf
IXFA34N65X2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 164ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Case: TO263
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 164ns
Power dissipation: 540W
Gate charge: 56nC
Features of semiconductor devices: ultra junction x-class
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IXFH34N65X2 IXF_34N65X2.pdf
IXFH34N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 540W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 164ns
Power dissipation: 540W
Gate charge: 56nC
Technology: HiPerFET™; X2-Class
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IXTH34N65X2 IXT_34N65X2.pdf
IXTH34N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO247-3; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Case: TO247-3
On-state resistance: 96mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Power dissipation: 540W
Gate charge: 54nC
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
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IXTP24N65X2 IXT_24N65X2.pdf
IXTP24N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Power dissipation: 390W
Gate charge: 36nC
Technology: X2-Class
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IXTP90N055T2 IXTA(I,P,Y)90N055T2.pdf
IXTP90N055T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 90A; 150W; TO220AB; 37ns
Mounting: THT
Power dissipation: 150W
Gate charge: 42nC
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 90A
Kind of channel: enhancement
Drain-source voltage: 55V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 8.4mΩ
Reverse recovery time: 37ns
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IXTR90P20P IXTR90P20P.pdf
IXTR90P20P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -53A; 312W; 315ns
Mounting: THT
Power dissipation: 312W
Gate charge: 205nC
Polarisation: unipolar
Technology: PolarP™
Drain current: -53A
Kind of channel: enhancement
Drain-source voltage: -200V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: ISOPLUS247™
On-state resistance: 48mΩ
Reverse recovery time: 315ns
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IXTA05N100HV IXTA(P)05N100_HV.pdf
IXTA05N100HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263HV; 710ns
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO263HV
On-state resistance: 17Ω
Reverse recovery time: 710ns
Power dissipation: 40W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 0.75A
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IXFN220N20X3 IXFN220N20X3.pdf 200VProductBrief.pdf
IXFN220N20X3
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 200V; 160A; SOT227B; screw; Idm: 500A
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±30V
Reverse recovery time: 128ns
Gate charge: 204nC
On-state resistance: 6.2mΩ
Technology: HiPerFET™; X3-Class
Drain current: 160A
Pulsed drain current: 500A
Drain-source voltage: 200V
Power dissipation: 390W
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
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IXTX8N150L IXTK(X)8N150L.pdf
IXTX8N150L
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 8A; 700W; PLUS247™; 1.7us
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Type of transistor: N-MOSFET
Case: PLUS247™
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 250nC
Reverse recovery time: 1.7µs
On-state resistance: 3.6Ω
Power dissipation: 700W
Drain current: 8A
Drain-source voltage: 1.5kV
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IXTP24N65X2M IXTP24N65X2M.pdf
IXTP24N65X2M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 37W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Power dissipation: 37W
Gate charge: 36nC
Technology: X2-Class
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IXGH36N60B3 IXGH36N60B3.pdf
IXGH36N60B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 200A
Turn-on time: 45ns
Turn-off time: 350ns
Gate charge: 80nC
Technology: GenX3™; PT
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IXGH36N60B3C1 IXGx36N60B3C1-DTE.pdf
IXGH36N60B3C1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 200A
Turn-on time: 47ns
Turn-off time: 350ns
Gate charge: 80nC
Technology: GenX3™; PT
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IXFL82N60P IXFL82N60P.pdf
IXFL82N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 55A; 625W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 55A
Case: ISOPLUS264™
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 240nC
Kind of channel: enhancement
Power dissipation: 625W
Kind of package: tube
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IXFN50N120SK IXFN50N120SK.pdf
IXFN50N120SK
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 1.2kV; 48A; SOT227B; screw; SiC; 115nC
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 48A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 50mΩ
Technology: SiC
Gate-source voltage: -5...20V
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 54ns
Gate charge: 115nC
Kind of channel: enhancement
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IXTQ34N65X2M littelfuse_discrete_mosfets_n-channel_ultra_junction_ixtq34n65x2m_datasheet.pdf?assetguid=9e2804bf-85d4-45e2-ba6f-de4ee48d3cec
IXTQ34N65X2M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; Idm: 48A; 40W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 96mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 48A
Power dissipation: 40W
Gate charge: 54nC
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IXFB82N60Q3 IXFB82N60Q3.pdf
IXFB82N60Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 600V; 82A; 1560W; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 82A
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 275nC
Kind of channel: enhancement
Power dissipation: 1.56kW
Technology: HiPerFET™; Q3-Class
Kind of package: tube
Reverse recovery time: 300ns
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IXFN66N85X IXFN66N85X.pdf
IXFN66N85X
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 850V; 65A; SOT227B; screw; Idm: 140A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 850V
Drain current: 65A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 65mΩ
Pulsed drain current: 140A
Power dissipation: 830W
Technology: HiPerFET™; X-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate charge: 230nC
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IXFP26N65X2 238_K248734.pdf
IXFP26N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26A; Idm: 36A; 460W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 36A
Power dissipation: 460W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
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IXFN40N110P IXFN40N110P.pdf
IXFN40N110P
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 1.1kV; 34A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.1kV
Drain current: 34A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.26Ω
Pulsed drain current: 100A
Power dissipation: 890W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Kind of channel: enhancement
Reverse recovery time: 300ns
Gate charge: 310nC
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IXFN40N110Q3 IXFN40N110Q3.pdf
IXFN40N110Q3
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 1.1kV; 35A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.1kV
Drain current: 35A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.26Ω
Pulsed drain current: 100A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Kind of channel: enhancement
Reverse recovery time: 434ns
Gate charge: 300nC
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IXFH26N60P IXFH26N60P.pdf
IXFH26N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 26A; 460W; TO247-3
Type of transistor: N-MOSFET
Power dissipation: 460W
Case: TO247-3
Mounting: THT
Kind of package: tube
Drain current: 26A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Reverse recovery time: 200ns
Gate charge: 72nC
Polarisation: unipolar
Technology: PolarHV™
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IXFK64N60P3 IXF_64N60P3.pdf
IXFK64N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 64A; 1130W; TO264
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.13kW
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
auf Bestellung 196 Stücke:
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IXFH28N60P3 IXFH(Q)28N60P3.pdf
IXFH28N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; 695W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Case: TO247-3
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 695W
Gate charge: 50nC
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IXFB82N60P IXFB82N60P.pdf
IXFB82N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 82A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 82A
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 240nC
Kind of channel: enhancement
Power dissipation: 1.25kW
Technology: HiPerFET™; Polar™
Kind of package: tube
Reverse recovery time: 200ns
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IXFH36N60P IXFH(K,T)36N60P.pdf
IXFH36N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO247-3
Type of transistor: N-MOSFET
Power dissipation: 650W
Case: TO247-3
Mounting: THT
Kind of package: tube
Drain current: 36A
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 0.19Ω
Gate charge: 102nC
Polarisation: unipolar
auf Bestellung 266 Stücke:
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IXFN180N25T IXFN180N25T.pdf
IXFN180N25T
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 250V; 168A; SOT227B; screw; Idm: 500A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 250V
Drain current: 168A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 12.9mΩ
Pulsed drain current: 500A
Power dissipation: 900W
Technology: GigaMOS™
Gate-source voltage: ±30V
Mechanical mounting: screw
Kind of channel: enhancement
Reverse recovery time: 200ns
Gate charge: 364nC
auf Bestellung 23 Stücke:
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IXFA34N65X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfa34n65x3-datasheet?assetguid=7bd01bfc-f3d8-4755-8e6c-5e250cb5176f
IXFA34N65X3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Pulsed drain current: 48A
Power dissipation: 446W
Gate charge: 29nC
Technology: HiPerFET™; X3-Class
Produkt ist nicht verfügbar
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IXFH34N65X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh34n65x3-datasheet?assetguid=965e45cd-8715-4cf1-b85d-adaafdfc5ec2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Pulsed drain current: 48A
Power dissipation: 446W
Gate charge: 29nC
Technology: HiPerFET™; X3-Class
Produkt ist nicht verfügbar
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IXKH47N60C IXKH47N60C.pdf
IXKH47N60C
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 290W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 250nC
Features of semiconductor devices: super junction coolmos
Produkt ist nicht verfügbar
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IXFH22N50P IXFH22N50P.pdf
IXFH22N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 350W
Gate charge: 50nC
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IXFH40N50Q IXFH40N50Q.pdf
IXFH40N50Q
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTH40N50L2 IXTH(T,Q)40N50L2.pdf
IXTH40N50L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
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IXTQ40N50L2 IXTH(T,Q)40N50L2.pdf
IXTQ40N50L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO3P
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
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