| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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CPC1035N | IXYS |
 Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC Type of relay: solid state Max. operating current: 0.1A Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source Body dimensions: 4.09x3.81x2.03mm Manufacturer series: OptoMOS Operating temperature: -40...85°C Insulation voltage: 1.5kV Turn-on time: 2ms Case: SOP4 Turn-off time: 1ms Control current max.: 50mA On-state resistance: 35Ω Mounting: SMT Kind of output: MOSFET Contacts configuration: SPST-NO |
auf Bestellung 1071 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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CPC1035NTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: SOP4 Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 2ms Turn-off time: 1ms Kind of output: MOSFET Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXTK90P20P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; TO264 Mounting: THT Case: TO264 Kind of package: tube Kind of channel: enhancement Drain-source voltage: -200V Type of transistor: P-MOSFET Gate-source voltage: ±20V On-state resistance: 44mΩ Reverse recovery time: 315ns Power dissipation: 890W Gate charge: 205nC Polarisation: unipolar Technology: PolarP™ Drain current: -90A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXGX120N120A3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; PLUS247™ Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 120A Power dissipation: 830W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 600A Mounting: THT Gate charge: 420nC Kind of package: tube Turn-on time: 105ns Turn-off time: 1365ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXGX120N120B3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; PLUS247™ Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 120A Power dissipation: 830W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 370A Mounting: THT Gate charge: 470nC Kind of package: tube Turn-on time: 122ns Turn-off time: 885ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXGX120N60A3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 120A; 780W; PLUS247™ Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 120A Power dissipation: 780W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 600A Mounting: THT Gate charge: 450nC Kind of package: tube Turn-on time: 123ns Turn-off time: 830ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXYH24N90C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 24A; 240W; TO247-3 Type of transistor: IGBT Case: TO247-3 Mounting: THT Gate charge: 40nC Technology: GenX3™; Planar; XPT™ Pulsed collector current: 110A Turn-on time: 60ns Kind of package: tube Turn-off time: 215ns Gate-emitter voltage: ±20V Collector current: 24A Collector-emitter voltage: 900V Power dissipation: 240W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXYH24N90C3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 24A; 200W; TO247-3 Type of transistor: IGBT Case: TO247-3 Mounting: THT Gate charge: 40nC Technology: GenX3™; Planar; XPT™ Pulsed collector current: 105A Turn-on time: 60ns Kind of package: tube Turn-off time: 215ns Gate-emitter voltage: ±20V Collector current: 24A Collector-emitter voltage: 900V Power dissipation: 200W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXFR15N100Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 400W; ISOPLUS247™ Mounting: THT Polarisation: unipolar Drain current: 10A Kind of channel: enhancement Drain-source voltage: 1kV Type of transistor: N-MOSFET Kind of package: tube Case: ISOPLUS247™ On-state resistance: 1.2Ω Power dissipation: 400W Gate charge: 64nC |
auf Bestellung 22 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFA7N80P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO263; 250ns Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 7A Power dissipation: 200W Case: TO263 Gate-source voltage: ±30V On-state resistance: 1.44Ω Mounting: SMD Kind of package: tube Kind of channel: enhancement Reverse recovery time: 250ns Gate charge: 32nC |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFP7N80P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO220AB Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 7A Power dissipation: 200W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1.44Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Reverse recovery time: 250ns Gate charge: 32nC |
auf Bestellung 21 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFA24N60X | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 400W; TO263; 140ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Power dissipation: 400W Case: TO263 On-state resistance: 0.175Ω Mounting: SMD Gate charge: 47nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 140ns Features of semiconductor devices: ultra junction x-class |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFA12N65X2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 12A Power dissipation: 180W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.31Ω Mounting: SMD Kind of package: tube Kind of channel: enhancement Reverse recovery time: 155ns Gate charge: 18.5nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFP12N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO220AB Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 12A Power dissipation: 180W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.31Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Reverse recovery time: 155ns Gate charge: 18.5nC |
auf Bestellung 213 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFP12N65X2M | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 40W; TO220AB Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 12A Power dissipation: 40W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.31Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Reverse recovery time: 155ns Gate charge: 18.5nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXTA12N65X2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 180W; TO263; 270ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 12A Power dissipation: 180W Case: TO263 On-state resistance: 0.3Ω Mounting: SMD Kind of package: tube Kind of channel: enhancement Reverse recovery time: 270ns Features of semiconductor devices: ultra junction x-class |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTH12N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO247-3 Type of transistor: N-MOSFET Technology: X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 12A Power dissipation: 180W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Reverse recovery time: 270ns Gate charge: 17.7nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTP12N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 180W; TO220AB; 270ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 12A Power dissipation: 180W Case: TO220AB On-state resistance: 0.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Reverse recovery time: 270ns Features of semiconductor devices: ultra junction x-class |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTP12N65X2M | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 24A; 40W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 12A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 24A Gate charge: 17.7nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXXP12N65B4D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 12A; 160W; TO220-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Power dissipation: 160W Case: TO220-3 Mounting: THT Kind of package: tube Collector current: 12A Collector-emitter voltage: 650V Gate charge: 34nC Pulsed collector current: 70A Turn-on time: 44ns Turn-off time: 245ns Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFH30N60P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO247-3 Type of transistor: N-MOSFET Power dissipation: 500W Case: TO247-3 Mounting: THT Kind of package: tube Polarisation: unipolar Drain current: 30A Kind of channel: enhancement Drain-source voltage: 600V On-state resistance: 0.24Ω Gate charge: 82nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXFH30N60X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO247-3; 145ns Type of transistor: N-MOSFET Power dissipation: 500W Case: TO247-3 Mounting: THT Kind of package: tube Polarisation: unipolar Features of semiconductor devices: ultra junction x-class Drain current: 30A Kind of channel: enhancement Drain-source voltage: 600V On-state resistance: 155mΩ Reverse recovery time: 145ns Gate charge: 56nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFP30N60X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO220AB; 145ns Type of transistor: N-MOSFET Power dissipation: 500W Case: TO220AB Mounting: THT Kind of package: tube Polarisation: unipolar Features of semiconductor devices: ultra junction x-class Drain current: 30A Kind of channel: enhancement Drain-source voltage: 600V On-state resistance: 155mΩ Reverse recovery time: 145ns Gate charge: 56nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFR30N60P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 166W; ISOPLUS247™ Type of transistor: N-MOSFET Power dissipation: 166W Case: ISOPLUS247™ Mounting: THT Kind of package: tube Polarisation: unipolar Drain current: 15A Kind of channel: enhancement Drain-source voltage: 600V On-state resistance: 0.25Ω Gate charge: 85nC |
auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXKH30N60C5 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 310W; TO247-3 Type of transistor: N-MOSFET Power dissipation: 310W Case: TO247-3 Mounting: THT Kind of package: tube Polarisation: unipolar Features of semiconductor devices: super junction coolmos Drain current: 30A Kind of channel: enhancement Drain-source voltage: 600V On-state resistance: 0.125Ω Gate charge: 53nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTH30N60L2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 710ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 540W Case: TO247-3 On-state resistance: 0.24Ω Mounting: THT Gate charge: 335nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 710ns Features of semiconductor devices: linear power mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFA18N60X | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO263; 127ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Power dissipation: 320W Case: TO263 On-state resistance: 0.23Ω Mounting: SMD Kind of package: tube Kind of channel: enhancement Reverse recovery time: 127ns Gate charge: 35nC Features of semiconductor devices: ultra junction x-class |
auf Bestellung 75 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFH18N60P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 360W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Power dissipation: 360W Case: TO247-3 On-state resistance: 0.4Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 50nC |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTQ18N60P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 360W; TO3P; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Power dissipation: 360W Case: TO3P On-state resistance: 0.42Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Reverse recovery time: 0.5µs Gate charge: 49nC Features of semiconductor devices: standard power mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXBH10N170 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 140W; TO247-3 Type of transistor: IGBT Technology: BiMOSFET™ Power dissipation: 140W Case: TO247-3 Mounting: THT Gate charge: 30nC Kind of package: tube Pulsed collector current: 40A Turn-on time: 63ns Turn-off time: 1.8µs Gate-emitter voltage: ±20V Collector current: 10A Collector-emitter voltage: 1.7kV Features of semiconductor devices: high voltage |
auf Bestellung 17 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXBH10N300HV | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 3kV; 10A; 180W; TO247HV Type of transistor: IGBT Technology: BiMOSFET™ Power dissipation: 180W Case: TO247HV Mounting: THT Gate charge: 46nC Kind of package: tube Pulsed collector current: 88A Turn-on time: 805ns Turn-off time: 2.13µs Gate-emitter voltage: ±20V Collector current: 10A Collector-emitter voltage: 3kV Features of semiconductor devices: high voltage |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFH140N10P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 140A; 600W; TO247-3 Type of transistor: N-MOSFET Drain-source voltage: 100V Drain current: 140A Power dissipation: 600W Case: TO247-3 On-state resistance: 11mΩ Mounting: THT Gate charge: 155nC Kind of channel: enhancement Polarisation: unipolar Technology: HiPerFET™; Polar™ Kind of package: tube |
auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFT140N10P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 600W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 140A Power dissipation: 600W Case: TO268 On-state resistance: 11mΩ Mounting: SMD Gate charge: 155nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXGR48N60C3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 26A; 125W; ISOPLUS247™ Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 26A Power dissipation: 125W Case: ISOPLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 230A Mounting: THT Gate charge: 77nC Kind of package: tube Turn-on time: 45ns Turn-off time: 187ns |
auf Bestellung 270 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXXH40N65B4 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 455W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 225A Mounting: THT Kind of package: tube Turn-off time: 252ns Gate charge: 66nC Turn-on time: 67ns |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFA16N60P3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO263 Type of transistor: N-MOSFET Power dissipation: 347W Case: TO263 Mounting: SMD Kind of package: tube Drain current: 16A Kind of channel: enhancement Drain-source voltage: 600V On-state resistance: 470mΩ Gate charge: 36nC Polarisation: unipolar |
auf Bestellung 66 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFP16N60P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO220AB Type of transistor: N-MOSFET Power dissipation: 347W Case: TO220AB Mounting: THT Kind of package: tube Drain current: 16A Kind of channel: enhancement Drain-source voltage: 600V On-state resistance: 470mΩ Gate charge: 36nC Polarisation: unipolar |
auf Bestellung 258 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFN20N120P | IXYS |
Category: Transistor modules Description: Module; single transistor; 1.2kV; 20A; SOT227B; screw; Idm: 50A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 20A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 570mΩ Pulsed drain current: 50A Power dissipation: 595W Technology: HiPerFET™; Polar™ Kind of channel: enhancement Gate charge: 193nC Reverse recovery time: 300ns Gate-source voltage: ±40V Mechanical mounting: screw |
auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFH34N60X2A | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 600V; 34A; Idm: 68A; 540W Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 600V Drain current: 34A Power dissipation: 540W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: ultra junction x-class Application: automotive industry Reverse recovery time: 164ns Pulsed drain current: 68A |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFK64N60Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 64A; 1250W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 64A Power dissipation: 1.25kW Case: TO264 On-state resistance: 95mΩ Mounting: THT Gate charge: 0.19µC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTP14N60X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; TO220AB Power dissipation: 180W Gate charge: 16.7nC Polarisation: unipolar Drain current: 14A Kind of channel: enhancement Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube Case: TO220AB On-state resistance: 0.25Ω Mounting: THT Pulsed drain current: 18A |
auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXXH30N60B3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 270W Case: TO247AD Mounting: THT Gate charge: 39nC Kind of package: tube Turn-on time: 23ns Turn-off time: 125ns Gate-emitter voltage: ±20V Collector current: 30A Collector-emitter voltage: 600V Pulsed collector current: 115A |
auf Bestellung 290 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTH30N60P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 500ns Mounting: THT Power dissipation: 540W Gate charge: 82nC Polarisation: unipolar Features of semiconductor devices: standard power mosfet Drain current: 30A Kind of channel: enhancement Drain-source voltage: 600V Type of transistor: N-MOSFET Kind of package: tube Case: TO247-3 On-state resistance: 0.24Ω Reverse recovery time: 0.5µs |
auf Bestellung 243 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTQ30N60L2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 710ns Type of transistor: N-MOSFET Power dissipation: 540W Case: TO3P Mounting: THT Kind of package: tube Polarisation: unipolar Features of semiconductor devices: linear power mosfet Drain current: 30A Kind of channel: enhancement Drain-source voltage: 600V On-state resistance: 0.24Ω Reverse recovery time: 710ns Gate charge: 335nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTQ30N60P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 500ns Type of transistor: N-MOSFET Power dissipation: 540W Case: TO3P Mounting: THT Kind of package: tube Polarisation: unipolar Features of semiconductor devices: standard power mosfet Drain current: 30A Kind of channel: enhancement Drain-source voltage: 600V On-state resistance: 0.24Ω Reverse recovery time: 0.5µs Gate charge: 82nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTT30N60L2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Linear L2™; unipolar; 600V; 30A; 540W; TO268 Type of transistor: N-MOSFET Power dissipation: 540W Case: TO268 Mounting: SMD Kind of package: tube Polarisation: unipolar Technology: Linear L2™ Drain current: 30A Kind of channel: enhancement Drain-source voltage: 600V Gate-source voltage: ±20V On-state resistance: 0.24Ω Reverse recovery time: 710ns Gate charge: 335nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTT30N60P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO268; 500ns Type of transistor: N-MOSFET Power dissipation: 540W Case: TO268 Mounting: SMD Kind of package: tube Polarisation: unipolar Features of semiconductor devices: standard power mosfet Drain current: 30A Kind of channel: enhancement Drain-source voltage: 600V On-state resistance: 0.24Ω Reverse recovery time: 0.5µs Gate charge: 82nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXXH30N60C3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 270W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Technology: GenX3™; Planar; XPT™ Pulsed collector current: 110A Turn-on time: 37ns Turn-off time: 166ns Gate charge: 37nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXXQ30N60B3M | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 19A; 90W; TO3PF Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 600V Collector current: 19A Power dissipation: 90W Case: TO3PF Gate-emitter voltage: ±20V Pulsed collector current: 140A Mounting: THT Gate charge: 39nC Kind of package: tube Turn-on time: 57ns Turn-off time: 292ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTA15N50L2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO263; 570ns Drain-source voltage: 500V Drain current: 15A Case: TO263 Polarisation: unipolar On-state resistance: 0.48Ω Power dissipation: 300W Kind of channel: enhancement Gate charge: 123nC Reverse recovery time: 570ns Type of transistor: N-MOSFET Kind of package: tube Mounting: SMD Features of semiconductor devices: linear power mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTH15N50L2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO247-3; 570ns Drain-source voltage: 500V Drain current: 15A Case: TO247-3 Polarisation: unipolar On-state resistance: 0.48Ω Power dissipation: 300W Kind of channel: enhancement Gate charge: 123nC Reverse recovery time: 570ns Type of transistor: N-MOSFET Kind of package: tube Mounting: THT Features of semiconductor devices: linear power mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTP15N50L2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO220AB; 570ns Drain-source voltage: 500V Drain current: 15A Case: TO220AB Polarisation: unipolar On-state resistance: 0.48Ω Power dissipation: 300W Kind of channel: enhancement Gate charge: 123nC Reverse recovery time: 570ns Type of transistor: N-MOSFET Kind of package: tube Mounting: THT Features of semiconductor devices: linear power mosfet |
auf Bestellung 259 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFK48N60P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 830W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 48A Power dissipation: 830W Case: TO264 On-state resistance: 135mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXGH48N60B3C1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 48A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 280A Mounting: THT Gate charge: 115nC Kind of package: tube Turn-on time: 48ns Turn-off time: 347ns |
auf Bestellung 26 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXGH48N60B3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 48A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 280A Mounting: THT Gate charge: 115nC Kind of package: tube Turn-on time: 44ns Turn-off time: 347ns |
auf Bestellung 174 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXGH48N60C3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 48A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 250A Mounting: THT Gate charge: 77nC Kind of package: tube Turn-on time: 45ns Turn-off time: 187ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFK27N80Q | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 27A Power dissipation: 481W Case: TO264 On-state resistance: 0.32Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 170nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTA08N50D2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO263; 11ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 0.8A Power dissipation: 60W Case: TO263 On-state resistance: 4.6Ω Mounting: SMD Gate charge: 312nC Kind of package: tube Kind of channel: depletion Reverse recovery time: 11ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTP08N50D2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO220AB; 11ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 0.8A Power dissipation: 60W Case: TO220AB On-state resistance: 4.6Ω Mounting: THT Gate charge: 312nC Kind of package: tube Kind of channel: depletion Reverse recovery time: 11ns |
auf Bestellung 247 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTY08N50D2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO252; 11ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 0.8A Power dissipation: 60W Case: TO252 On-state resistance: 4.6Ω Mounting: SMD Gate charge: 312nC Kind of package: tube Kind of channel: depletion Reverse recovery time: 11ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 350 Stücke Im Einkaufswagen Stück im Wert von UAH |
| CPC1035N |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
Body dimensions: 4.09x3.81x2.03mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Insulation voltage: 1.5kV
Turn-on time: 2ms
Case: SOP4
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 35Ω
Mounting: SMT
Kind of output: MOSFET
Contacts configuration: SPST-NO
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
Body dimensions: 4.09x3.81x2.03mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Insulation voltage: 1.5kV
Turn-on time: 2ms
Case: SOP4
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 35Ω
Mounting: SMT
Kind of output: MOSFET
Contacts configuration: SPST-NO
auf Bestellung 1071 Stücke:
Lieferzeit 14-21 Tag (e)
| CPC1035NTR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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Stück im Wert von UAH
| IXTK90P20P |
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Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; TO264
Mounting: THT
Case: TO264
Kind of package: tube
Kind of channel: enhancement
Drain-source voltage: -200V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Reverse recovery time: 315ns
Power dissipation: 890W
Gate charge: 205nC
Polarisation: unipolar
Technology: PolarP™
Drain current: -90A
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; TO264
Mounting: THT
Case: TO264
Kind of package: tube
Kind of channel: enhancement
Drain-source voltage: -200V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Reverse recovery time: 315ns
Power dissipation: 890W
Gate charge: 205nC
Polarisation: unipolar
Technology: PolarP™
Drain current: -90A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXGX120N120A3 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 830W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 420nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 1365ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 830W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 420nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 1365ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXGX120N120B3 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 830W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 370A
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 885ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 830W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 370A
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 885ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXGX120N60A3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 120A; 780W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 120A
Power dissipation: 780W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 450nC
Kind of package: tube
Turn-on time: 123ns
Turn-off time: 830ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 120A; 780W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 120A
Power dissipation: 780W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 450nC
Kind of package: tube
Turn-on time: 123ns
Turn-off time: 830ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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Stück im Wert von UAH
| IXYH24N90C3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 24A; 240W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Gate charge: 40nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 110A
Turn-on time: 60ns
Kind of package: tube
Turn-off time: 215ns
Gate-emitter voltage: ±20V
Collector current: 24A
Collector-emitter voltage: 900V
Power dissipation: 240W
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 24A; 240W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Gate charge: 40nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 110A
Turn-on time: 60ns
Kind of package: tube
Turn-off time: 215ns
Gate-emitter voltage: ±20V
Collector current: 24A
Collector-emitter voltage: 900V
Power dissipation: 240W
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXYH24N90C3D1 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 24A; 200W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Gate charge: 40nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 105A
Turn-on time: 60ns
Kind of package: tube
Turn-off time: 215ns
Gate-emitter voltage: ±20V
Collector current: 24A
Collector-emitter voltage: 900V
Power dissipation: 200W
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 24A; 200W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Gate charge: 40nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 105A
Turn-on time: 60ns
Kind of package: tube
Turn-off time: 215ns
Gate-emitter voltage: ±20V
Collector current: 24A
Collector-emitter voltage: 900V
Power dissipation: 200W
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXFR15N100Q3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 400W; ISOPLUS247™
Mounting: THT
Polarisation: unipolar
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: ISOPLUS247™
On-state resistance: 1.2Ω
Power dissipation: 400W
Gate charge: 64nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 400W; ISOPLUS247™
Mounting: THT
Polarisation: unipolar
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: ISOPLUS247™
On-state resistance: 1.2Ω
Power dissipation: 400W
Gate charge: 64nC
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFA7N80P |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO263; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate charge: 32nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO263; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate charge: 32nC
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFP7N80P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate charge: 32nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate charge: 32nC
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFA24N60X |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 400W; TO263; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 400W
Case: TO263
On-state resistance: 0.175Ω
Mounting: SMD
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Features of semiconductor devices: ultra junction x-class
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 400W; TO263; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 400W
Case: TO263
On-state resistance: 0.175Ω
Mounting: SMD
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFA12N65X2 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 155ns
Gate charge: 18.5nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 155ns
Gate charge: 18.5nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFP12N65X2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 155ns
Gate charge: 18.5nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 155ns
Gate charge: 18.5nC
auf Bestellung 213 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFP12N65X2M |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 40W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 155ns
Gate charge: 18.5nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 40W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 155ns
Gate charge: 18.5nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXTA12N65X2 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 180W; TO263; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO263
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 270ns
Features of semiconductor devices: ultra junction x-class
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 180W; TO263; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO263
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 270ns
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTH12N65X2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 270ns
Gate charge: 17.7nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 270ns
Gate charge: 17.7nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTP12N65X2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 180W; TO220AB; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO220AB
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 270ns
Features of semiconductor devices: ultra junction x-class
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 180W; TO220AB; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO220AB
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 270ns
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTP12N65X2M |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 24A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 24A
Gate charge: 17.7nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 24A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 24A
Gate charge: 17.7nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXXP12N65B4D1 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 12A; 160W; TO220-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 12A
Collector-emitter voltage: 650V
Gate charge: 34nC
Pulsed collector current: 70A
Turn-on time: 44ns
Turn-off time: 245ns
Gate-emitter voltage: ±20V
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 12A; 160W; TO220-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 12A
Collector-emitter voltage: 650V
Gate charge: 34nC
Pulsed collector current: 70A
Turn-on time: 44ns
Turn-off time: 245ns
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFH30N60P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO247-3
Type of transistor: N-MOSFET
Power dissipation: 500W
Case: TO247-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 0.24Ω
Gate charge: 82nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO247-3
Type of transistor: N-MOSFET
Power dissipation: 500W
Case: TO247-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 0.24Ω
Gate charge: 82nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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Stück im Wert von UAH
| IXFH30N60X |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO247-3; 145ns
Type of transistor: N-MOSFET
Power dissipation: 500W
Case: TO247-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 155mΩ
Reverse recovery time: 145ns
Gate charge: 56nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO247-3; 145ns
Type of transistor: N-MOSFET
Power dissipation: 500W
Case: TO247-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 155mΩ
Reverse recovery time: 145ns
Gate charge: 56nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFP30N60X |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO220AB; 145ns
Type of transistor: N-MOSFET
Power dissipation: 500W
Case: TO220AB
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 155mΩ
Reverse recovery time: 145ns
Gate charge: 56nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO220AB; 145ns
Type of transistor: N-MOSFET
Power dissipation: 500W
Case: TO220AB
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 155mΩ
Reverse recovery time: 145ns
Gate charge: 56nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFR30N60P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 166W; ISOPLUS247™
Type of transistor: N-MOSFET
Power dissipation: 166W
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain current: 15A
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 0.25Ω
Gate charge: 85nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 166W; ISOPLUS247™
Type of transistor: N-MOSFET
Power dissipation: 166W
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain current: 15A
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 0.25Ω
Gate charge: 85nC
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
| IXKH30N60C5 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 310W; TO247-3
Type of transistor: N-MOSFET
Power dissipation: 310W
Case: TO247-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Features of semiconductor devices: super junction coolmos
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 0.125Ω
Gate charge: 53nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 310W; TO247-3
Type of transistor: N-MOSFET
Power dissipation: 310W
Case: TO247-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Features of semiconductor devices: super junction coolmos
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 0.125Ω
Gate charge: 53nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTH30N60L2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 335nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 710ns
Features of semiconductor devices: linear power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 335nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 710ns
Features of semiconductor devices: linear power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFA18N60X |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO263; 127ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 320W
Case: TO263
On-state resistance: 0.23Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 127ns
Gate charge: 35nC
Features of semiconductor devices: ultra junction x-class
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO263; 127ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 320W
Case: TO263
On-state resistance: 0.23Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 127ns
Gate charge: 35nC
Features of semiconductor devices: ultra junction x-class
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFH18N60P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 360W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 360W
Case: TO247-3
On-state resistance: 0.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 50nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 360W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 360W
Case: TO247-3
On-state resistance: 0.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 50nC
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTQ18N60P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 360W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 360W
Case: TO3P
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Gate charge: 49nC
Features of semiconductor devices: standard power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 360W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 360W
Case: TO3P
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Gate charge: 49nC
Features of semiconductor devices: standard power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXBH10N170 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 140W; TO247-3
Type of transistor: IGBT
Technology: BiMOSFET™
Power dissipation: 140W
Case: TO247-3
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Pulsed collector current: 40A
Turn-on time: 63ns
Turn-off time: 1.8µs
Gate-emitter voltage: ±20V
Collector current: 10A
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 140W; TO247-3
Type of transistor: IGBT
Technology: BiMOSFET™
Power dissipation: 140W
Case: TO247-3
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Pulsed collector current: 40A
Turn-on time: 63ns
Turn-off time: 1.8µs
Gate-emitter voltage: ±20V
Collector current: 10A
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
| IXBH10N300HV |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 10A; 180W; TO247HV
Type of transistor: IGBT
Technology: BiMOSFET™
Power dissipation: 180W
Case: TO247HV
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Pulsed collector current: 88A
Turn-on time: 805ns
Turn-off time: 2.13µs
Gate-emitter voltage: ±20V
Collector current: 10A
Collector-emitter voltage: 3kV
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 10A; 180W; TO247HV
Type of transistor: IGBT
Technology: BiMOSFET™
Power dissipation: 180W
Case: TO247HV
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Pulsed collector current: 88A
Turn-on time: 805ns
Turn-off time: 2.13µs
Gate-emitter voltage: ±20V
Collector current: 10A
Collector-emitter voltage: 3kV
Features of semiconductor devices: high voltage
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFH140N10P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 140A; 600W; TO247-3
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 155nC
Kind of channel: enhancement
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 140A; 600W; TO247-3
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 155nC
Kind of channel: enhancement
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Kind of package: tube
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFT140N10P |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO268
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO268
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
| IXGR48N60C3D1 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 26A; 125W; ISOPLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 26A
Power dissipation: 125W
Case: ISOPLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 230A
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 187ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 26A; 125W; ISOPLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 26A
Power dissipation: 125W
Case: ISOPLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 230A
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 187ns
auf Bestellung 270 Stücke:
Lieferzeit 14-21 Tag (e)
| IXXH40N65B4 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Kind of package: tube
Turn-off time: 252ns
Gate charge: 66nC
Turn-on time: 67ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Kind of package: tube
Turn-off time: 252ns
Gate charge: 66nC
Turn-on time: 67ns
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFA16N60P3 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO263
Type of transistor: N-MOSFET
Power dissipation: 347W
Case: TO263
Mounting: SMD
Kind of package: tube
Drain current: 16A
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 470mΩ
Gate charge: 36nC
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO263
Type of transistor: N-MOSFET
Power dissipation: 347W
Case: TO263
Mounting: SMD
Kind of package: tube
Drain current: 16A
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 470mΩ
Gate charge: 36nC
Polarisation: unipolar
auf Bestellung 66 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFP16N60P3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO220AB
Type of transistor: N-MOSFET
Power dissipation: 347W
Case: TO220AB
Mounting: THT
Kind of package: tube
Drain current: 16A
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 470mΩ
Gate charge: 36nC
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO220AB
Type of transistor: N-MOSFET
Power dissipation: 347W
Case: TO220AB
Mounting: THT
Kind of package: tube
Drain current: 16A
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 470mΩ
Gate charge: 36nC
Polarisation: unipolar
auf Bestellung 258 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFN20N120P |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 1.2kV; 20A; SOT227B; screw; Idm: 50A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 20A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 570mΩ
Pulsed drain current: 50A
Power dissipation: 595W
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate charge: 193nC
Reverse recovery time: 300ns
Gate-source voltage: ±40V
Mechanical mounting: screw
Category: Transistor modules
Description: Module; single transistor; 1.2kV; 20A; SOT227B; screw; Idm: 50A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 20A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 570mΩ
Pulsed drain current: 50A
Power dissipation: 595W
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate charge: 193nC
Reverse recovery time: 300ns
Gate-source voltage: ±40V
Mechanical mounting: screw
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFH34N60X2A |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 600V; 34A; Idm: 68A; 540W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 34A
Power dissipation: 540W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Application: automotive industry
Reverse recovery time: 164ns
Pulsed drain current: 68A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 600V; 34A; Idm: 68A; 540W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 34A
Power dissipation: 540W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Application: automotive industry
Reverse recovery time: 164ns
Pulsed drain current: 68A
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFK64N60Q3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 64A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 64A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTP14N60X2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; TO220AB
Power dissipation: 180W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 14A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220AB
On-state resistance: 0.25Ω
Mounting: THT
Pulsed drain current: 18A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; TO220AB
Power dissipation: 180W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 14A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220AB
On-state resistance: 0.25Ω
Mounting: THT
Pulsed drain current: 18A
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
| IXXH30N60B3D1 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO247AD
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Turn-on time: 23ns
Turn-off time: 125ns
Gate-emitter voltage: ±20V
Collector current: 30A
Collector-emitter voltage: 600V
Pulsed collector current: 115A
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO247AD
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Turn-on time: 23ns
Turn-off time: 125ns
Gate-emitter voltage: ±20V
Collector current: 30A
Collector-emitter voltage: 600V
Pulsed collector current: 115A
auf Bestellung 290 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTH30N60P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 500ns
Mounting: THT
Power dissipation: 540W
Gate charge: 82nC
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO247-3
On-state resistance: 0.24Ω
Reverse recovery time: 0.5µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 500ns
Mounting: THT
Power dissipation: 540W
Gate charge: 82nC
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO247-3
On-state resistance: 0.24Ω
Reverse recovery time: 0.5µs
auf Bestellung 243 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTQ30N60L2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 710ns
Type of transistor: N-MOSFET
Power dissipation: 540W
Case: TO3P
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Features of semiconductor devices: linear power mosfet
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 0.24Ω
Reverse recovery time: 710ns
Gate charge: 335nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 710ns
Type of transistor: N-MOSFET
Power dissipation: 540W
Case: TO3P
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Features of semiconductor devices: linear power mosfet
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 0.24Ω
Reverse recovery time: 710ns
Gate charge: 335nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTQ30N60P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 500ns
Type of transistor: N-MOSFET
Power dissipation: 540W
Case: TO3P
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 0.24Ω
Reverse recovery time: 0.5µs
Gate charge: 82nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 500ns
Type of transistor: N-MOSFET
Power dissipation: 540W
Case: TO3P
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 0.24Ω
Reverse recovery time: 0.5µs
Gate charge: 82nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTT30N60L2 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 600V; 30A; 540W; TO268
Type of transistor: N-MOSFET
Power dissipation: 540W
Case: TO268
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Technology: Linear L2™
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Reverse recovery time: 710ns
Gate charge: 335nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 600V; 30A; 540W; TO268
Type of transistor: N-MOSFET
Power dissipation: 540W
Case: TO268
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Technology: Linear L2™
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Reverse recovery time: 710ns
Gate charge: 335nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTT30N60P |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO268; 500ns
Type of transistor: N-MOSFET
Power dissipation: 540W
Case: TO268
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 0.24Ω
Reverse recovery time: 0.5µs
Gate charge: 82nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO268; 500ns
Type of transistor: N-MOSFET
Power dissipation: 540W
Case: TO268
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 0.24Ω
Reverse recovery time: 0.5µs
Gate charge: 82nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXXH30N60C3D1 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 110A
Turn-on time: 37ns
Turn-off time: 166ns
Gate charge: 37nC
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 110A
Turn-on time: 37ns
Turn-off time: 166ns
Gate charge: 37nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXXQ30N60B3M |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 19A; 90W; TO3PF
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 19A
Power dissipation: 90W
Case: TO3PF
Gate-emitter voltage: ±20V
Pulsed collector current: 140A
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Turn-on time: 57ns
Turn-off time: 292ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 19A; 90W; TO3PF
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 19A
Power dissipation: 90W
Case: TO3PF
Gate-emitter voltage: ±20V
Pulsed collector current: 140A
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Turn-on time: 57ns
Turn-off time: 292ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTA15N50L2 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO263; 570ns
Drain-source voltage: 500V
Drain current: 15A
Case: TO263
Polarisation: unipolar
On-state resistance: 0.48Ω
Power dissipation: 300W
Kind of channel: enhancement
Gate charge: 123nC
Reverse recovery time: 570ns
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: SMD
Features of semiconductor devices: linear power mosfet
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO263; 570ns
Drain-source voltage: 500V
Drain current: 15A
Case: TO263
Polarisation: unipolar
On-state resistance: 0.48Ω
Power dissipation: 300W
Kind of channel: enhancement
Gate charge: 123nC
Reverse recovery time: 570ns
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: SMD
Features of semiconductor devices: linear power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTH15N50L2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO247-3; 570ns
Drain-source voltage: 500V
Drain current: 15A
Case: TO247-3
Polarisation: unipolar
On-state resistance: 0.48Ω
Power dissipation: 300W
Kind of channel: enhancement
Gate charge: 123nC
Reverse recovery time: 570ns
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Features of semiconductor devices: linear power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO247-3; 570ns
Drain-source voltage: 500V
Drain current: 15A
Case: TO247-3
Polarisation: unipolar
On-state resistance: 0.48Ω
Power dissipation: 300W
Kind of channel: enhancement
Gate charge: 123nC
Reverse recovery time: 570ns
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Features of semiconductor devices: linear power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTP15N50L2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO220AB; 570ns
Drain-source voltage: 500V
Drain current: 15A
Case: TO220AB
Polarisation: unipolar
On-state resistance: 0.48Ω
Power dissipation: 300W
Kind of channel: enhancement
Gate charge: 123nC
Reverse recovery time: 570ns
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Features of semiconductor devices: linear power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO220AB; 570ns
Drain-source voltage: 500V
Drain current: 15A
Case: TO220AB
Polarisation: unipolar
On-state resistance: 0.48Ω
Power dissipation: 300W
Kind of channel: enhancement
Gate charge: 123nC
Reverse recovery time: 570ns
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Features of semiconductor devices: linear power mosfet
auf Bestellung 259 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFK48N60P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 830W
Case: TO264
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 830W
Case: TO264
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| IXGH48N60B3C1 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 280A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Turn-on time: 48ns
Turn-off time: 347ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 280A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Turn-on time: 48ns
Turn-off time: 347ns
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
| IXGH48N60B3D1 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 280A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Turn-on time: 44ns
Turn-off time: 347ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 280A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Turn-on time: 44ns
Turn-off time: 347ns
auf Bestellung 174 Stücke:
Lieferzeit 14-21 Tag (e)
| IXGH48N60C3D1 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 187ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 187ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFK27N80Q |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Power dissipation: 481W
Case: TO264
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 170nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Power dissipation: 481W
Case: TO264
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 170nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTA08N50D2 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO263; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO263
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO263; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO263
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTP08N50D2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO220AB; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO220AB
On-state resistance: 4.6Ω
Mounting: THT
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO220AB; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO220AB
On-state resistance: 4.6Ω
Mounting: THT
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
auf Bestellung 247 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTY08N50D2 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO252; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO252
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO252; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO252
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 350 Stücke
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Stück im Wert von UAH