| Anzahl | Preis |
|---|---|
| 1+ | 12.58 EUR |
| 10+ | 8.87 EUR |
| 100+ | 7.16 EUR |
| 500+ | 6.35 EUR |
| 1000+ | 5.63 EUR |
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Technische Details IXYA50N65C5 IXYS
Category: SMD IGBT transistors, Description: Transistor: IGBT; 650V; 50A; 650W; D2PAK, Type of transistor: IGBT, Collector-emitter voltage: 650V, Collector current: 50A, Power dissipation: 650W, Case: D2PAK, Gate-emitter voltage: ±20V, Pulsed collector current: 240A, Mounting: SMD, Gate charge: 117nC, Kind of package: tube, Turn-off time: 170ns.
Weitere Produktangebote IXYA50N65C5
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| IXYA50N65C5 | Hersteller : IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 50A; 650W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 650W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: SMD Gate charge: 117nC Kind of package: tube Turn-off time: 170ns |
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