IXYH20N65B3 IXYS
Hersteller: IXYS
Description: DISC IGBT XPT-GENX3 TO-247AD
Power - Max: 230 W
Current - Collector Pulsed (Icm): 108 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 58 A
Part Status: Active
Gate Charge: 29 nC
Test Condition: 400V, 20A, 20Ohm, 15V
Switching Energy: 500µJ (on), 450µJ (off)
Td (on/off) @ 25°C: 12ns/103ns
IGBT Type: PT
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Reverse Recovery Time (trr): 25 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produktrezensionen
Produktbewertung abgeben
Technische Details IXYH20N65B3 IXYS
Description: DISC IGBT XPT-GENX3 TO-247AD, Power - Max: 230 W, Current - Collector Pulsed (Icm): 108 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 58 A, Part Status: Active, Gate Charge: 29 nC, Test Condition: 400V, 20A, 20Ohm, 15V, Switching Energy: 500µJ (on), 450µJ (off), Td (on/off) @ 25°C: 12ns/103ns, IGBT Type: PT, Supplier Device Package: TO-247AD, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A, Reverse Recovery Time (trr): 25 ns, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote IXYH20N65B3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
IXYH20N65B3 | Hersteller : IXYS |
IGBTs TO263 650V 20A XPT |
Produkt ist nicht verfügbar |
|
| IXYH20N65B3 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 58A; 230W; TO247-3 Type of transistor: IGBT Power dissipation: 230W Case: TO247-3 Mounting: THT Kind of package: tube Collector current: 58A Gate-emitter voltage: ±20V Pulsed collector current: 108A Collector-emitter voltage: 650V Gate charge: 29nC |
Produkt ist nicht verfügbar |