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IXYA60N65A5

IXYA60N65A5 IXYS

Power_Semiconductor_Discrete_IGBT_IXYA60N65A5_Datasheet.pdf Hersteller: IXYS
IGBTs 650V, 60A, XPT Gen5 A5 IGBT in TO-263
auf Bestellung 90 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+9.03 EUR
10+4.77 EUR
100+4.35 EUR
500+3.64 EUR
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Technische Details IXYA60N65A5 IXYS

Description: IGBT TRENCH FS 650V 134A TO-263, Packaging: Bulk, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Supplier Device Package: TO-263 (D2Pak), Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 36A, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 28ns/230ns, Switching Energy: 600µJ (on), 1.45mJ (off), Test Condition: 400V, 36A, 5Ohm, 15V, Gate Charge: 128 nC, Current - Collector (Ic) (Max): 134 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 260 A, Power - Max: 395 W.

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IXYA60N65A5 IXYA60N65A5 Hersteller : IXYS Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYA60N65A5Datasheet.pdf Description: IGBT TRENCH FS 650V 134A TO-263
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 36A
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 28ns/230ns
Switching Energy: 600µJ (on), 1.45mJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 128 nC
Current - Collector (Ic) (Max): 134 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 260 A
Power - Max: 395 W
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.03 EUR
50+4.76 EUR
100+4.35 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXYA60N65A5 Hersteller : IXYS Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYA60N65A5Datasheet.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 395W; D2PAK
Type of transistor: IGBT
Case: D2PAK
Mounting: SMD
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 395W
Collector current: 60A
Pulsed collector current: 260A
Collector-emitter voltage: 650V
Gate charge: 128nC
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