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IXFH140N10P IXFH140N10P IXYS IXFH(T)140N10P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 140A; 600W; TO247-3
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 155nC
Kind of channel: enhancement
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Kind of package: tube
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IXFT140N10P IXFT140N10P IXYS IXFH(T)140N10P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 600W; TO268
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO268
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 155nC
Kind of channel: enhancement
Polarisation: unipolar
Kind of package: tube
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IXGR48N60C3D1 IXGR48N60C3D1 IXYS IXGR48N60C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 26A; 125W; ISOPLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 26A
Power dissipation: 125W
Case: ISOPLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 230A
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 187ns
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IXXH40N65B4 IXXH40N65B4 IXYS IXXH40N65B4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Kind of package: tube
Turn-off time: 252ns
Gate charge: 66nC
Turn-on time: 67ns
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IXFA16N60P3 IXFA16N60P3 IXYS IXFA(H,P)16N60P3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO263
Type of transistor: N-MOSFET
Power dissipation: 347W
Case: TO263
Mounting: SMD
Kind of package: tube
Drain current: 16A
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 470mΩ
Gate charge: 36nC
Polarisation: unipolar
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IXFP16N60P3 IXFP16N60P3 IXYS IXFA(H,P)16N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO220AB
Type of transistor: N-MOSFET
Power dissipation: 347W
Case: TO220AB
Mounting: THT
Kind of package: tube
Drain current: 16A
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 470mΩ
Gate charge: 36nC
Polarisation: unipolar
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IXFN20N120P IXFN20N120P IXYS IXFN20N120P.pdf Category: Transistor modules
Description: Module; single transistor; 1.2kV; 20A; SOT227B; screw; Idm: 50A
Technology: HiPerFET™; Polar™
Power dissipation: 595W
Case: SOT227B
Gate charge: 193nC
Gate-source voltage: ±40V
Semiconductor structure: single transistor
On-state resistance: 570mΩ
Reverse recovery time: 300ns
Pulsed drain current: 50A
Type of semiconductor module: MOSFET transistor
Polarisation: unipolar
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Electrical mounting: screw
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IXFH34N60X2A IXFH34N60X2A IXYS IXFH34N60X2A.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 600V; 34A; Idm: 68A; 540W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 34A
Power dissipation: 540W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 68A
Features of semiconductor devices: ultra junction x-class
Application: automotive industry
Reverse recovery time: 164ns
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IXFK64N60Q3 IXFK64N60Q3 IXYS IXFK(X)64N60Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 64A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
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IXTP14N60X2 IXTP14N60X2 IXYS littelfuse-discrete-mosfets-ixtp12n65x2m-datasheet?assetguid=bb457d93-cec3-41b9-97ee-48a3a768170e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 16.7nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 18A
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IXXH30N60B3D1 IXXH30N60B3D1 IXYS IXXH30N60B3D1-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO247AD
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Pulsed collector current: 115A
Turn-on time: 23ns
Turn-off time: 125ns
Gate-emitter voltage: ±20V
Collector current: 30A
Collector-emitter voltage: 600V
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IXTH30N60P IXTH30N60P IXYS IXTH(Q,T,V)30N60P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 500ns
Features of semiconductor devices: standard power mosfet
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO247-3
On-state resistance: 0.24Ω
Reverse recovery time: 0.5µs
Mounting: THT
Power dissipation: 540W
Gate charge: 82nC
Polarisation: unipolar
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IXTQ30N60L2 IXTQ30N60L2 IXYS IXT_30N60L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 710ns
Type of transistor: N-MOSFET
Power dissipation: 540W
Case: TO3P
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Features of semiconductor devices: linear power mosfet
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 0.24Ω
Reverse recovery time: 710ns
Gate charge: 335nC
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IXTQ30N60P IXTQ30N60P IXYS IXTH(Q,T,V)30N60P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 500ns
Type of transistor: N-MOSFET
Power dissipation: 540W
Case: TO3P
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 0.24Ω
Reverse recovery time: 0.5µs
Gate charge: 82nC
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IXTT30N60L2 IXTT30N60L2 IXYS IXT_30N60L2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 600V; 30A; 540W; TO268
Type of transistor: N-MOSFET
Power dissipation: 540W
Case: TO268
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Technology: Linear L2™
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Reverse recovery time: 710ns
Gate charge: 335nC
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IXTT30N60P IXTT30N60P IXYS IXTH(Q,T,V)30N60P_S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO268; 500ns
Type of transistor: N-MOSFET
Power dissipation: 540W
Case: TO268
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 0.24Ω
Reverse recovery time: 0.5µs
Gate charge: 82nC
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IXXH30N60C3D1 IXXH30N60C3D1 IXYS IXXH30N60C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 110A
Turn-on time: 37ns
Turn-off time: 166ns
Gate charge: 37nC
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IXXQ30N60B3M IXXQ30N60B3M IXYS IXXQ30N60B3M.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 19A; 90W; TO3PF
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 19A
Power dissipation: 90W
Case: TO3PF
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 140A
Turn-on time: 57ns
Turn-off time: 292ns
Gate charge: 39nC
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IXTA15N50L2 IXTA15N50L2 IXYS IXTA(H,P)15N50L2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO263; 570ns
Drain-source voltage: 500V
Drain current: 15A
Case: TO263
Polarisation: unipolar
On-state resistance: 0.48Ω
Power dissipation: 300W
Kind of channel: enhancement
Gate charge: 123nC
Reverse recovery time: 570ns
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: SMD
Features of semiconductor devices: linear power mosfet
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IXTH15N50L2 IXTH15N50L2 IXYS IXTA(H,P)15N50L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO247-3; 570ns
Drain-source voltage: 500V
Drain current: 15A
Case: TO247-3
Polarisation: unipolar
On-state resistance: 0.48Ω
Power dissipation: 300W
Kind of channel: enhancement
Gate charge: 123nC
Reverse recovery time: 570ns
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Features of semiconductor devices: linear power mosfet
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IXTP15N50L2 IXTP15N50L2 IXYS IXTA(H,P)15N50L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO220AB; 570ns
Drain-source voltage: 500V
Drain current: 15A
Case: TO220AB
Polarisation: unipolar
On-state resistance: 0.48Ω
Power dissipation: 300W
Kind of channel: enhancement
Gate charge: 123nC
Reverse recovery time: 570ns
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Features of semiconductor devices: linear power mosfet
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IXFK48N60P IXFK48N60P IXYS IXF_48N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 830W
Case: TO264
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
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IXGH48N60B3C1 IXGH48N60B3C1 IXYS IXGH48N60B3C1-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Collector current: 48A
Collector-emitter voltage: 600V
Pulsed collector current: 280A
Turn-on time: 48ns
Turn-off time: 347ns
Gate-emitter voltage: ±20V
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IXGH48N60B3D1 IXGH48N60B3D1 IXYS IXGH48N60B3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Collector current: 48A
Collector-emitter voltage: 600V
Pulsed collector current: 280A
Turn-on time: 44ns
Turn-off time: 347ns
Gate-emitter voltage: ±20V
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IXGH48N60C3D1 IXGH48N60C3D1 IXYS IXGH48N60C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 187ns
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IXFK27N80Q IXFK27N80Q IXYS IXFK(X)27N80Q.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Power dissipation: 481W
Case: TO264
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 170nC
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IXTA08N50D2 IXTA08N50D2 IXYS IXTA(P,Y)08N50D2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO263; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO263
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
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IXTP08N50D2 IXTP08N50D2 IXYS IXTA(P,Y)08N50D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO220AB; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO220AB
On-state resistance: 4.6Ω
Mounting: THT
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
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IXTY08N50D2 IXTY08N50D2 IXYS IXTA(P,Y)08N50D2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO252; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO252
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
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IXKC15N60C5 IXYS media?resourcetype=datasheets&itemid=350D5F86-1037-44C7-AFE1-4B49E34623C5&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Super-Junction-IXKC15N60C5-Datasheet.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; ISOPLUS220™; 390ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
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IXTX90N25L2 IXTX90N25L2 IXYS IXTK(X)90N25L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 90A; 960W; PLUS247™; 266ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 90A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 640nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 266ns
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IXTX90P20P IXTX90P20P IXYS IXT_90P20P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; 315ns
Mounting: THT
Power dissipation: 890W
Gate charge: 205nC
Polarisation: unipolar
Technology: PolarP™
Drain current: -90A
Kind of channel: enhancement
Drain-source voltage: -200V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PLUS247™
On-state resistance: 44mΩ
Reverse recovery time: 315ns
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IXTP150N15X4 IXTP150N15X4 IXYS IXTH(P)150N15X4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 150A; 480W; TO220AB; 100ns
Mounting: THT
Power dissipation: 480W
Gate charge: 105nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 150A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 7.2mΩ
Reverse recovery time: 100ns
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IXTA3N150HV IXTA3N150HV IXYS IXTA3N150HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO263; 900ns
Mounting: SMD
Features of semiconductor devices: standard power mosfet
Case: TO263
Kind of package: tube
Reverse recovery time: 900ns
Power dissipation: 250W
Gate charge: 38.6nC
Polarisation: unipolar
Drain current: 3A
Kind of channel: enhancement
Drain-source voltage: 1.5kV
Type of transistor: N-MOSFET
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IXFN44N80P IXFN44N80P IXYS IXFN44N80P.pdf description Category: Transistor modules
Description: Module; single transistor; 800V; 39A; SOT227B; screw; Idm: 100A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 39A
Pulsed drain current: 100A
Power dissipation: 694W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Gate charge: 200nC
Kind of channel: enhancement
Reverse recovery time: 250ns
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
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IXTP60N10T IXTP60N10T IXYS IXTA(P)60N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO220AB; 59ns
Features of semiconductor devices: thrench gate power mosfet
Drain current: 60A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 18mΩ
Reverse recovery time: 59ns
Mounting: THT
Power dissipation: 176W
Gate charge: 49nC
Polarisation: unipolar
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IXFN44N100Q3 IXFN44N100Q3 IXYS IXFN44N100Q3.pdf Category: Transistor modules
Description: Module; single transistor; 1kV; 38A; SOT227B; screw; Idm: 110A; 960W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 38A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.22Ω
Pulsed drain current: 110A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Kind of channel: enhancement
Reverse recovery time: 300ns
Gate charge: 264nC
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IXFH60N65X2 IXFH60N65X2 IXYS IXFH60N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; Idm: 120A; 780W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Case: TO247-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 780W
Gate charge: 108nC
Technology: HiPerFET™; X2-Class
Features of semiconductor devices: ultra junction x-class
On-state resistance: 52mΩ
Reverse recovery time: 180ns
Pulsed drain current: 120A
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IXFH60N65X2-4 IXFH60N65X2-4 IXYS IXFH60N65X2-4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; 780W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Case: TO247-4
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 780W
Gate charge: 108nC
Technology: HiPerFET™; X2-Class
On-state resistance: 52mΩ
Reverse recovery time: 180ns
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IXFT60N65X2HV IXFT60N65X2HV IXYS IXFT60N65X2HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; 780W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Case: TO268
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 780W
Gate charge: 108nC
Technology: HiPerFET™; X2-Class
On-state resistance: 52mΩ
Reverse recovery time: 180ns
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IXXH60N65B4 IXXH60N65B4 IXYS IXXH60N65B4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 536W
Gate charge: 86nC
Technology: GenX4™; Trench; XPT™
Pulsed collector current: 265A
Turn-on time: 94ns
Turn-off time: 208ns
Gate-emitter voltage: ±20V
Collector current: 60A
Collector-emitter voltage: 650V
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IXXH60N65B4H1 IXXH60N65B4H1 IXYS IXXH60N65B4H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 536W
Gate charge: 86nC
Technology: GenX4™; Trench; XPT™
Pulsed collector current: 265A
Turn-on time: 94ns
Turn-off time: 208ns
Gate-emitter voltage: ±20V
Collector current: 60A
Collector-emitter voltage: 650V
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IXXH60N65C4 IXXH60N65C4 IXYS IXXH60N65C4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 536W
Gate charge: 86nC
Technology: GenX4™; Trench; XPT™
Pulsed collector current: 260A
Turn-on time: 110ns
Turn-off time: 164ns
Gate-emitter voltage: ±20V
Collector current: 60A
Collector-emitter voltage: 650V
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IXXK160N65B4 IXXK160N65B4 IXYS IXXK(x)160N65B4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264
Type of transistor: IGBT
Case: TO264
Mounting: THT
Kind of package: tube
Power dissipation: 940W
Gate charge: 425nC
Technology: GenX4™; Trench; XPT™
Pulsed collector current: 860A
Turn-on time: 93ns
Turn-off time: 380ns
Gate-emitter voltage: ±20V
Collector current: 160A
Collector-emitter voltage: 650V
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IXXK160N65C4 IXYS DS100516AIXXKX160N65C4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264
Type of transistor: IGBT
Case: TO264
Mounting: THT
Kind of package: tube
Power dissipation: 940W
Gate charge: 422nC
Technology: GenX4™; XPT™
Pulsed collector current: 320A
Turn-on time: 52ns
Turn-off time: 197ns
Gate-emitter voltage: ±20V
Collector current: 160A
Collector-emitter voltage: 650V
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IXXX160N65B4 IXXX160N65B4 IXYS IXXK(x)160N65B4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™
Type of transistor: IGBT
Case: PLUS247™
Mounting: THT
Kind of package: tube
Power dissipation: 940W
Gate charge: 425nC
Technology: GenX4™; Trench; XPT™
Pulsed collector current: 860A
Turn-on time: 93ns
Turn-off time: 380ns
Gate-emitter voltage: ±20V
Collector current: 160A
Collector-emitter voltage: 650V
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IXXX160N65C4 IXYS littelfuse-discrete-igbts-ixx-160n65c4-datasheet?assetguid=dcea7101-7c37-4ad5-a03a-2aa565384e38 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™
Type of transistor: IGBT
Case: PLUS247™
Mounting: THT
Kind of package: tube
Power dissipation: 940W
Gate charge: 422nC
Technology: GenX4™; XPT™
Pulsed collector current: 320A
Turn-on time: 52ns
Turn-off time: 197ns
Gate-emitter voltage: ±20V
Collector current: 160A
Collector-emitter voltage: 650V
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IXFH46N65X2 IXFH46N65X2 IXYS IXFH46N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 660W; TO247-3; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 660W
Case: TO247-3
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 98nC
Kind of channel: enhancement
Reverse recovery time: 180ns
Features of semiconductor devices: ultra junction x-class
Kind of package: tube
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CPC1150N CPC1150N IXYS CPC1150N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
On-state resistance: 50Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NC
Insulation voltage: 1.5kV
Turn-on time: 1ms
Switched voltage: max. 350V AC; max. 350V DC
Case: SOP4
Max. operating current: 120mA
Turn-off time: 2ms
Control current max.: 50mA
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IXFP34N65X2 IXFP34N65X2 IXYS IXF_34N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO220AB; 164ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO220AB
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of channel: enhancement
Reverse recovery time: 164ns
Features of semiconductor devices: ultra junction x-class
Kind of package: tube
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IXGT72N60A3 IXGT72N60A3 IXYS IXG_72N60A3.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO268
Type of transistor: IGBT
Case: TO268
Mounting: SMD
Gate charge: 230nC
Power dissipation: 540W
Technology: GenX3™
Pulsed collector current: 400A
Turn-on time: 61ns
Kind of package: tube
Turn-off time: 885ns
Gate-emitter voltage: ±20V
Collector current: 72A
Collector-emitter voltage: 600V
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IXFA22N60P3 IXFA22N60P3 IXYS IXFA(H,P,Q)22N60P3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Case: TO263
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 38nC
Kind of channel: enhancement
Power dissipation: 500W
Kind of package: tube
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IXFH22N60P IXFH22N60P IXYS IXFH22N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 400W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Case: TO247-3
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 58nC
Kind of channel: enhancement
Power dissipation: 400W
Kind of package: tube
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IXFH22N60P3 IXFH22N60P3 IXYS IXFA(H,P,Q)22N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Case: TO247-3
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 38nC
Kind of channel: enhancement
Power dissipation: 500W
Kind of package: tube
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IXFP22N60P3 IXFP22N60P3 IXYS IXFA(H,P,Q)22N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Case: TO220AB
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 38nC
Kind of channel: enhancement
Power dissipation: 500W
Kind of package: tube
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IXKH35N60C5 IXKH35N60C5 IXYS IXKH35N60C5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 35A; 357W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 35A
Power dissipation: 357W
Case: TO247-3
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
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IXFN110N85X IXFN110N85X IXYS IXFN110N85X.pdf Category: Transistor modules
Description: Module; single transistor; 850V; 110A; SOT227B; screw; Idm: 220A
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 110A
Power dissipation: 1.17kW
Case: SOT227B
On-state resistance: 33mΩ
Gate charge: 425nC
Kind of channel: enhancement
Reverse recovery time: 205ns
Pulsed drain current: 220A
Type of semiconductor module: MOSFET transistor
Technology: HiPerFET™; X-Class
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±40V
Semiconductor structure: single transistor
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CLA100E1200HB CLA100E1200HB IXYS CLA100E1200HB.pdf Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 160A; 100A; Igt: 80mA; TO247AD
Type of thyristor: standard
Max. off-state voltage: 1.2kV
Max. load current: 160A
Load current: 100A
Gate current: 80mA
Case: TO247AD
Mounting: THT
Max. forward impulse current: 1.19kA
Kind of package: tube
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IXKP20N60C5M IXKP20N60C5M IXYS IXKP20N60C5M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.6A; TO220FP; 340ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.6A
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 340ns
Gate charge: 30nC
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IXYP20N65B3D1 IXYP20N65B3D1 IXYS IXYP20N65B3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 230W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 108A
Collector-emitter voltage: 650V
Turn-on time: 39ns
Gate charge: 29nC
Turn-off time: 271ns
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IXFH140N10P IXFH(T)140N10P.pdf
IXFH140N10P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 140A; 600W; TO247-3
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 155nC
Kind of channel: enhancement
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Kind of package: tube
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IXFT140N10P IXFH(T)140N10P.pdf
IXFT140N10P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 600W; TO268
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO268
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 155nC
Kind of channel: enhancement
Polarisation: unipolar
Kind of package: tube
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IXGR48N60C3D1 IXGR48N60C3D1.pdf
IXGR48N60C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 26A; 125W; ISOPLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 26A
Power dissipation: 125W
Case: ISOPLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 230A
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 187ns
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IXXH40N65B4 IXXH40N65B4.pdf
IXXH40N65B4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Kind of package: tube
Turn-off time: 252ns
Gate charge: 66nC
Turn-on time: 67ns
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IXFA16N60P3 IXFA(H,P)16N60P3.pdf
IXFA16N60P3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO263
Type of transistor: N-MOSFET
Power dissipation: 347W
Case: TO263
Mounting: SMD
Kind of package: tube
Drain current: 16A
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 470mΩ
Gate charge: 36nC
Polarisation: unipolar
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IXFP16N60P3 IXFA(H,P)16N60P3.pdf
IXFP16N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO220AB
Type of transistor: N-MOSFET
Power dissipation: 347W
Case: TO220AB
Mounting: THT
Kind of package: tube
Drain current: 16A
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 470mΩ
Gate charge: 36nC
Polarisation: unipolar
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IXFN20N120P IXFN20N120P.pdf
IXFN20N120P
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 1.2kV; 20A; SOT227B; screw; Idm: 50A
Technology: HiPerFET™; Polar™
Power dissipation: 595W
Case: SOT227B
Gate charge: 193nC
Gate-source voltage: ±40V
Semiconductor structure: single transistor
On-state resistance: 570mΩ
Reverse recovery time: 300ns
Pulsed drain current: 50A
Type of semiconductor module: MOSFET transistor
Polarisation: unipolar
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Electrical mounting: screw
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IXFH34N60X2A IXFH34N60X2A.pdf
IXFH34N60X2A
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 600V; 34A; Idm: 68A; 540W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 34A
Power dissipation: 540W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 68A
Features of semiconductor devices: ultra junction x-class
Application: automotive industry
Reverse recovery time: 164ns
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IXFK64N60Q3 IXFK(X)64N60Q3.pdf
IXFK64N60Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 64A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
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IXTP14N60X2 littelfuse-discrete-mosfets-ixtp12n65x2m-datasheet?assetguid=bb457d93-cec3-41b9-97ee-48a3a768170e
IXTP14N60X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 16.7nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 18A
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IXXH30N60B3D1 IXXH30N60B3D1-DTE.pdf
IXXH30N60B3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO247AD
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Pulsed collector current: 115A
Turn-on time: 23ns
Turn-off time: 125ns
Gate-emitter voltage: ±20V
Collector current: 30A
Collector-emitter voltage: 600V
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IXTH30N60P IXTH(Q,T,V)30N60P_S.pdf
IXTH30N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 500ns
Features of semiconductor devices: standard power mosfet
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO247-3
On-state resistance: 0.24Ω
Reverse recovery time: 0.5µs
Mounting: THT
Power dissipation: 540W
Gate charge: 82nC
Polarisation: unipolar
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IXTQ30N60L2 IXT_30N60L2.pdf
IXTQ30N60L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 710ns
Type of transistor: N-MOSFET
Power dissipation: 540W
Case: TO3P
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Features of semiconductor devices: linear power mosfet
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 0.24Ω
Reverse recovery time: 710ns
Gate charge: 335nC
Produkt ist nicht verfügbar
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IXTQ30N60P IXTH(Q,T,V)30N60P_S.pdf
IXTQ30N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 500ns
Type of transistor: N-MOSFET
Power dissipation: 540W
Case: TO3P
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 0.24Ω
Reverse recovery time: 0.5µs
Gate charge: 82nC
Produkt ist nicht verfügbar
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IXTT30N60L2 IXT_30N60L2.pdf
IXTT30N60L2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 600V; 30A; 540W; TO268
Type of transistor: N-MOSFET
Power dissipation: 540W
Case: TO268
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Technology: Linear L2™
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Reverse recovery time: 710ns
Gate charge: 335nC
Produkt ist nicht verfügbar
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IXTT30N60P IXTH(Q,T,V)30N60P_S.pdf
IXTT30N60P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO268; 500ns
Type of transistor: N-MOSFET
Power dissipation: 540W
Case: TO268
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 0.24Ω
Reverse recovery time: 0.5µs
Gate charge: 82nC
Produkt ist nicht verfügbar
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IXXH30N60C3D1 IXXH30N60C3D1.pdf
IXXH30N60C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 110A
Turn-on time: 37ns
Turn-off time: 166ns
Gate charge: 37nC
Produkt ist nicht verfügbar
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IXXQ30N60B3M IXXQ30N60B3M.pdf
IXXQ30N60B3M
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 19A; 90W; TO3PF
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 19A
Power dissipation: 90W
Case: TO3PF
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 140A
Turn-on time: 57ns
Turn-off time: 292ns
Gate charge: 39nC
Produkt ist nicht verfügbar
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IXTA15N50L2 IXTA(H,P)15N50L2.pdf
IXTA15N50L2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO263; 570ns
Drain-source voltage: 500V
Drain current: 15A
Case: TO263
Polarisation: unipolar
On-state resistance: 0.48Ω
Power dissipation: 300W
Kind of channel: enhancement
Gate charge: 123nC
Reverse recovery time: 570ns
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: SMD
Features of semiconductor devices: linear power mosfet
Produkt ist nicht verfügbar
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IXTH15N50L2 IXTA(H,P)15N50L2.pdf
IXTH15N50L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO247-3; 570ns
Drain-source voltage: 500V
Drain current: 15A
Case: TO247-3
Polarisation: unipolar
On-state resistance: 0.48Ω
Power dissipation: 300W
Kind of channel: enhancement
Gate charge: 123nC
Reverse recovery time: 570ns
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Features of semiconductor devices: linear power mosfet
Produkt ist nicht verfügbar
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IXTP15N50L2 IXTA(H,P)15N50L2.pdf
IXTP15N50L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO220AB; 570ns
Drain-source voltage: 500V
Drain current: 15A
Case: TO220AB
Polarisation: unipolar
On-state resistance: 0.48Ω
Power dissipation: 300W
Kind of channel: enhancement
Gate charge: 123nC
Reverse recovery time: 570ns
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Features of semiconductor devices: linear power mosfet
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IXFK48N60P IXF_48N60P.pdf
IXFK48N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 830W
Case: TO264
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
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IXGH48N60B3C1 IXGH48N60B3C1-DTE.pdf
IXGH48N60B3C1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Collector current: 48A
Collector-emitter voltage: 600V
Pulsed collector current: 280A
Turn-on time: 48ns
Turn-off time: 347ns
Gate-emitter voltage: ±20V
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IXGH48N60B3D1 IXGH48N60B3D1.pdf
IXGH48N60B3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Collector current: 48A
Collector-emitter voltage: 600V
Pulsed collector current: 280A
Turn-on time: 44ns
Turn-off time: 347ns
Gate-emitter voltage: ±20V
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IXGH48N60C3D1 IXGH48N60C3D1.pdf
IXGH48N60C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 187ns
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IXFK27N80Q IXFK(X)27N80Q.pdf
IXFK27N80Q
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Power dissipation: 481W
Case: TO264
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 170nC
Produkt ist nicht verfügbar
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IXTA08N50D2 IXTA(P,Y)08N50D2.pdf
IXTA08N50D2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO263; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO263
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
Produkt ist nicht verfügbar
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IXTP08N50D2 IXTA(P,Y)08N50D2.pdf
IXTP08N50D2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO220AB; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO220AB
On-state resistance: 4.6Ω
Mounting: THT
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
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IXTY08N50D2 IXTA(P,Y)08N50D2.pdf
IXTY08N50D2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO252; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO252
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
Produkt ist nicht verfügbar
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IXKC15N60C5 media?resourcetype=datasheets&itemid=350D5F86-1037-44C7-AFE1-4B49E34623C5&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Super-Junction-IXKC15N60C5-Datasheet.PDF
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; ISOPLUS220™; 390ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Produkt ist nicht verfügbar
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IXTX90N25L2 IXTK(X)90N25L2.pdf
IXTX90N25L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 90A; 960W; PLUS247™; 266ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 90A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 640nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 266ns
Produkt ist nicht verfügbar
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IXTX90P20P IXT_90P20P.pdf
IXTX90P20P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; 315ns
Mounting: THT
Power dissipation: 890W
Gate charge: 205nC
Polarisation: unipolar
Technology: PolarP™
Drain current: -90A
Kind of channel: enhancement
Drain-source voltage: -200V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PLUS247™
On-state resistance: 44mΩ
Reverse recovery time: 315ns
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IXTP150N15X4 IXTH(P)150N15X4.pdf
IXTP150N15X4
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 150A; 480W; TO220AB; 100ns
Mounting: THT
Power dissipation: 480W
Gate charge: 105nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 150A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 7.2mΩ
Reverse recovery time: 100ns
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IXTA3N150HV IXTA3N150HV.pdf
IXTA3N150HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO263; 900ns
Mounting: SMD
Features of semiconductor devices: standard power mosfet
Case: TO263
Kind of package: tube
Reverse recovery time: 900ns
Power dissipation: 250W
Gate charge: 38.6nC
Polarisation: unipolar
Drain current: 3A
Kind of channel: enhancement
Drain-source voltage: 1.5kV
Type of transistor: N-MOSFET
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IXFN44N80P description IXFN44N80P.pdf
IXFN44N80P
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 800V; 39A; SOT227B; screw; Idm: 100A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 39A
Pulsed drain current: 100A
Power dissipation: 694W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Gate charge: 200nC
Kind of channel: enhancement
Reverse recovery time: 250ns
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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IXTP60N10T IXTA(P)60N10T.pdf
IXTP60N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO220AB; 59ns
Features of semiconductor devices: thrench gate power mosfet
Drain current: 60A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 18mΩ
Reverse recovery time: 59ns
Mounting: THT
Power dissipation: 176W
Gate charge: 49nC
Polarisation: unipolar
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IXFN44N100Q3 IXFN44N100Q3.pdf
IXFN44N100Q3
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 1kV; 38A; SOT227B; screw; Idm: 110A; 960W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 38A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.22Ω
Pulsed drain current: 110A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Kind of channel: enhancement
Reverse recovery time: 300ns
Gate charge: 264nC
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IXFH60N65X2 IXFH60N65X2.pdf
IXFH60N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; Idm: 120A; 780W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Case: TO247-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 780W
Gate charge: 108nC
Technology: HiPerFET™; X2-Class
Features of semiconductor devices: ultra junction x-class
On-state resistance: 52mΩ
Reverse recovery time: 180ns
Pulsed drain current: 120A
Produkt ist nicht verfügbar
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IXFH60N65X2-4 IXFH60N65X2-4.pdf
IXFH60N65X2-4
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; 780W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Case: TO247-4
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 780W
Gate charge: 108nC
Technology: HiPerFET™; X2-Class
On-state resistance: 52mΩ
Reverse recovery time: 180ns
Produkt ist nicht verfügbar
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IXFT60N65X2HV IXFT60N65X2HV.pdf
IXFT60N65X2HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; 780W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Case: TO268
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 780W
Gate charge: 108nC
Technology: HiPerFET™; X2-Class
On-state resistance: 52mΩ
Reverse recovery time: 180ns
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IXXH60N65B4 IXXH60N65B4.pdf
IXXH60N65B4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 536W
Gate charge: 86nC
Technology: GenX4™; Trench; XPT™
Pulsed collector current: 265A
Turn-on time: 94ns
Turn-off time: 208ns
Gate-emitter voltage: ±20V
Collector current: 60A
Collector-emitter voltage: 650V
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IXXH60N65B4H1 IXXH60N65B4H1.pdf
IXXH60N65B4H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 536W
Gate charge: 86nC
Technology: GenX4™; Trench; XPT™
Pulsed collector current: 265A
Turn-on time: 94ns
Turn-off time: 208ns
Gate-emitter voltage: ±20V
Collector current: 60A
Collector-emitter voltage: 650V
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IXXH60N65C4 IXXH60N65C4.pdf
IXXH60N65C4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 536W
Gate charge: 86nC
Technology: GenX4™; Trench; XPT™
Pulsed collector current: 260A
Turn-on time: 110ns
Turn-off time: 164ns
Gate-emitter voltage: ±20V
Collector current: 60A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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IXXK160N65B4 IXXK(x)160N65B4.pdf
IXXK160N65B4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264
Type of transistor: IGBT
Case: TO264
Mounting: THT
Kind of package: tube
Power dissipation: 940W
Gate charge: 425nC
Technology: GenX4™; Trench; XPT™
Pulsed collector current: 860A
Turn-on time: 93ns
Turn-off time: 380ns
Gate-emitter voltage: ±20V
Collector current: 160A
Collector-emitter voltage: 650V
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IXXK160N65C4 DS100516AIXXKX160N65C4.pdf
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264
Type of transistor: IGBT
Case: TO264
Mounting: THT
Kind of package: tube
Power dissipation: 940W
Gate charge: 422nC
Technology: GenX4™; XPT™
Pulsed collector current: 320A
Turn-on time: 52ns
Turn-off time: 197ns
Gate-emitter voltage: ±20V
Collector current: 160A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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IXXX160N65B4 IXXK(x)160N65B4.pdf
IXXX160N65B4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™
Type of transistor: IGBT
Case: PLUS247™
Mounting: THT
Kind of package: tube
Power dissipation: 940W
Gate charge: 425nC
Technology: GenX4™; Trench; XPT™
Pulsed collector current: 860A
Turn-on time: 93ns
Turn-off time: 380ns
Gate-emitter voltage: ±20V
Collector current: 160A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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IXXX160N65C4 littelfuse-discrete-igbts-ixx-160n65c4-datasheet?assetguid=dcea7101-7c37-4ad5-a03a-2aa565384e38
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™
Type of transistor: IGBT
Case: PLUS247™
Mounting: THT
Kind of package: tube
Power dissipation: 940W
Gate charge: 422nC
Technology: GenX4™; XPT™
Pulsed collector current: 320A
Turn-on time: 52ns
Turn-off time: 197ns
Gate-emitter voltage: ±20V
Collector current: 160A
Collector-emitter voltage: 650V
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IXFH46N65X2 IXFH46N65X2.pdf
IXFH46N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 660W; TO247-3; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 660W
Case: TO247-3
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 98nC
Kind of channel: enhancement
Reverse recovery time: 180ns
Features of semiconductor devices: ultra junction x-class
Kind of package: tube
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CPC1150N CPC1150N.pdf
CPC1150N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
On-state resistance: 50Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NC
Insulation voltage: 1.5kV
Turn-on time: 1ms
Switched voltage: max. 350V AC; max. 350V DC
Case: SOP4
Max. operating current: 120mA
Turn-off time: 2ms
Control current max.: 50mA
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IXFP34N65X2 IXF_34N65X2.pdf
IXFP34N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO220AB; 164ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO220AB
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of channel: enhancement
Reverse recovery time: 164ns
Features of semiconductor devices: ultra junction x-class
Kind of package: tube
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IXGT72N60A3 IXG_72N60A3.pdf
IXGT72N60A3
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO268
Type of transistor: IGBT
Case: TO268
Mounting: SMD
Gate charge: 230nC
Power dissipation: 540W
Technology: GenX3™
Pulsed collector current: 400A
Turn-on time: 61ns
Kind of package: tube
Turn-off time: 885ns
Gate-emitter voltage: ±20V
Collector current: 72A
Collector-emitter voltage: 600V
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IXFA22N60P3 IXFA(H,P,Q)22N60P3.pdf
IXFA22N60P3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Case: TO263
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 38nC
Kind of channel: enhancement
Power dissipation: 500W
Kind of package: tube
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IXFH22N60P IXFH22N60P.pdf
IXFH22N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 400W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Case: TO247-3
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 58nC
Kind of channel: enhancement
Power dissipation: 400W
Kind of package: tube
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IXFH22N60P3 IXFA(H,P,Q)22N60P3.pdf
IXFH22N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Case: TO247-3
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 38nC
Kind of channel: enhancement
Power dissipation: 500W
Kind of package: tube
auf Bestellung 474 Stücke:
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IXFP22N60P3 IXFA(H,P,Q)22N60P3.pdf
IXFP22N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Case: TO220AB
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 38nC
Kind of channel: enhancement
Power dissipation: 500W
Kind of package: tube
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IXKH35N60C5 IXKH35N60C5.pdf
IXKH35N60C5
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 35A; 357W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 35A
Power dissipation: 357W
Case: TO247-3
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
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IXFN110N85X IXFN110N85X.pdf
IXFN110N85X
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 850V; 110A; SOT227B; screw; Idm: 220A
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 110A
Power dissipation: 1.17kW
Case: SOT227B
On-state resistance: 33mΩ
Gate charge: 425nC
Kind of channel: enhancement
Reverse recovery time: 205ns
Pulsed drain current: 220A
Type of semiconductor module: MOSFET transistor
Technology: HiPerFET™; X-Class
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±40V
Semiconductor structure: single transistor
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CLA100E1200HB CLA100E1200HB.pdf
CLA100E1200HB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 160A; 100A; Igt: 80mA; TO247AD
Type of thyristor: standard
Max. off-state voltage: 1.2kV
Max. load current: 160A
Load current: 100A
Gate current: 80mA
Case: TO247AD
Mounting: THT
Max. forward impulse current: 1.19kA
Kind of package: tube
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IXKP20N60C5M IXKP20N60C5M.pdf
IXKP20N60C5M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.6A; TO220FP; 340ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.6A
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 340ns
Gate charge: 30nC
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IXYP20N65B3D1 IXYP20N65B3D1.pdf
IXYP20N65B3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 230W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 108A
Collector-emitter voltage: 650V
Turn-on time: 39ns
Gate charge: 29nC
Turn-off time: 271ns
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