| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
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IX4428NTR | IXYS |
Gate Driver IC, 4,5V~35V; 2Ch; Low Side Inv/Non-Inv; 1,2A; 10ns, 8ns; -40°C~125°C; Substitute: IX4428N; IX4428NTR UIIX4428nAnzahl je Verpackung: 10 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXDD604SI | IXYS |
Driver 4A 2-OUT Low Side Non-Inv Automotive 8-Pin SOIC EP IXDD604SITR; IXDD604SITR UIIXDD604siAnzahl je Verpackung: 10 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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IXDD604SIATR | IXYS |
Gate Driver 2-OUT Low Side Non-Inv; 4A; 9ns; 4.5V~35V; -40°C~125°C; IXDD604SIA IXDD604SIATR UIIXDD604siaAnzahl je Verpackung: 10 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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IXDD609SI | IXYS |
Driver 9A 1-OUT Low Side Non-Inv Automotive 8-Pin SOIC EP IXDD609SITR IXDD609SI UIIXDD609siAnzahl je Verpackung: 2 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXDD609SIA IXYS | IXYS |
Gate Drivers; Low-Side; Ultrafast MOSFET; 1/1; 9A; 22ns; 4.5V~35V; -55°C~150°C; IXDD609SIATR; IXDD609SIA UIIXDD609sia Anzahl je Verpackung: 10 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXDD614SI IXYS | IXYS |
Low Side Inverting Driver, 14A Peak, 4.5?35V, -55?150°C IXDD614SI UIIXDD614si Anzahl je Verpackung: 2 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXDF604SIA IXYS | IXYS |
Driver 4A 2-OUT Low Side Inv/Non-Inv Automotive 8-Pin SOIC IXDF604SIATR IXDF604SIA UIIXDF604sia Anzahl je Verpackung: 10 Stücke |
auf Bestellung 15 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXDI614CI IXYS | IXYS |
Driver 14A 1-OUT Low Side Inv 5-Pin(5+Tab) TO-220 IXDI614CI UIIXDI614ci Anzahl je Verpackung: 2 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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IXDI630CI | IXYS |
Driver 30A 1-OUT Low Side Inv 5-Pin(5+Tab) TO-220 IXDI630CI UIIXDI630ciAnzahl je Verpackung: 2 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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IXDN604PI | IXYS |
Driver 4A 2-OUT Low Side Non-Inv Automotive 8-Pin PDIP IXDN604PI UIIXDN604piAnzahl je Verpackung: 10 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXDN604SIA | IXYS |
Driver 4A 2-OUT Low Side Non-Inv Automotive 8-Pin SOIC IXDN604SIA IXDN604SIATR IXDN604SIATR UIIXDN604siaAnzahl je Verpackung: 10 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXDN609SIATR | IXYS |
Driver 9A 1-OUT Low Side Non-Inv Automotive 8-Pin SOIC IXDN609SIA UIIXDN609siaAnzahl je Verpackung: 5 Stücke |
auf Bestellung 45 Stücke: Lieferzeit 7-14 Tag (e) |
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IXDN609YI | IXYS |
Gate Drivers; Low-Side; Ultrafast MOSFET; 1/1; 9A; 22ns; 4.5V~35V; -55°C~150°C; IXDN609YI UIIXDN609yiAnzahl je Verpackung: 2 Stücke |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXDN614SITR | IXYS |
Driver; 14A; 1-OUT Low Side Non-Inv; 1-CH; 4,5V~35V; -40°C~125°C; Substitute: IXDN614SI; IXDN614SITR; IXDN614SI UIIXDN614siAnzahl je Verpackung: 2 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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IXGR48N60C3D1 | IXYS |
Trans IGBT Chip N-CH 600V 56A 125000mW 3-Pin(3+Tab) ISOPLUS 247 IXGR48N60C3D1 TIXGR48n60c3d1Anzahl je Verpackung: 2 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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| CLA30E1200HB | IXYS |
Thyristor; 47A; 1200V; 28mA; CLA30E1200HB TYCLA30e1200hbAnzahl je Verpackung: 5 Stücke |
auf Bestellung 25 Stücke: Lieferzeit 7-14 Tag (e) |
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| CLA30E1200PB | IXYS |
Thyristor; 47A; 1200V; 30mA; CLA30E1200PB TYCLA30e1200pbAnzahl je Verpackung: 5 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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| CLA80E1200HF | IXYS |
Thyristor; 126A; 1200V; 38mA; CLA80E1200HF TYCLA80e1200hfAnzahl je Verpackung: 2 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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| CS19-08ho1 | IXYS |
Thyristor; 31A; 800V; 28mA; CS19-08HO1 TYCS19-08ho1Anzahl je Verpackung: 5 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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| CS19-12HO1 IXYS | IXYS |
It=31A; Vdrm=1,2kV; Igt=50mA; CS19-12HO1 TYCS19-12ho1 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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| CS20-14IO1 IXYS | IXYS |
It=31A; Vdrm=1,4kV; Igt=80mA CS20-14IO1 TYCS20-14io1 Anzahl je Verpackung: 2 Stücke |
auf Bestellung 4 Stücke: Lieferzeit 7-14 Tag (e) |
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| CS20-16IO1 IXYS | IXYS |
It=31A; Vdrm=1,6kV; Igt=80mA CS20-16IO1 TYCS20-16io1 Anzahl je Verpackung: 2 Stücke |
auf Bestellung 14 Stücke: Lieferzeit 7-14 Tag (e) |
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| MCC26-12IO8B IXYS | IXYS |
Module; double series; 1.2kV; 27A; TO240AA; Ufmax: 1.27V; Ifsm: 440A MCC26-12IO8B MO MCC26-12IO8B Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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| CPC1303GR IXYS | IXYS |
Optocoupler; channels: 1; CTR: 200-2500%; PDIP04smd; transistor; 5 kVrms; 30 V CPC1303GR , CPC1303GRTR CPC1303GR OOCPC1303gr Anzahl je Verpackung: 10 Stücke |
auf Bestellung 278 Stücke: Lieferzeit 7-14 Tag (e) |
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| CPC1006N IXYS SSR | IXYS |
SPST-NO; 60VDC; 50mA; SOP-4 CPC1006NTR CPC1006N P CPC1006N Anzahl je Verpackung: 10 Stücke |
auf Bestellung 4 Stücke: Lieferzeit 7-14 Tag (e) |
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| CPC1014N | IXYS |
400mA; 60V AC/DC; SPST-NO; SOP-4; 4,09 x 3,81 x 2,03mm; SSR; CPC1014NTR P CPC1014NAnzahl je Verpackung: 10 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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| CPC1018N | IXYS |
Relay SSR 50mA 1.5V DC-IN 0.6A 60V AC/DC-OUT 4-Pin SOP Tube CPC1018NTR CPC1018NTR P CPC1018NAnzahl je Verpackung: 10 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFH50N60P3 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO247-3 Type of transistor: N-MOSFET Power dissipation: 1.04kW Case: TO247-3 Mounting: THT Kind of package: tube Kind of channel: enhancement Drain-source voltage: 600V On-state resistance: 0.16Ω Gate charge: 94nC Polarisation: unipolar Drain current: 50A |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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IXFQ50N60P3 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO3P Type of transistor: N-MOSFET Power dissipation: 1.04kW Case: TO3P Mounting: THT Kind of package: tube Kind of channel: enhancement Drain-source voltage: 600V On-state resistance: 0.16Ω Gate charge: 94nC Polarisation: unipolar Drain current: 50A |
auf Bestellung 180 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
| IXFH60N60X3 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 60A; Idm: 90A; 625W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Power dissipation: 625W Case: TO247-3 Mounting: THT Kind of package: tube Drain-source voltage: 600V Gate-source voltage: ±20V On-state resistance: 51mΩ Reverse recovery time: 175ns Pulsed drain current: 90A Gate charge: 51nC Polarisation: unipolar Drain current: 60A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
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IXFQ60N60X | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 60A; 890W; TO3P; 200ns Type of transistor: N-MOSFET Power dissipation: 890W Case: TO3P Mounting: THT Kind of package: tube Drain-source voltage: 600V On-state resistance: 55mΩ Reverse recovery time: 200ns Gate charge: 143nC Polarisation: unipolar Features of semiconductor devices: ultra junction x-class Drain current: 60A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
| IXFT60N60X3HV | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 60A; Idm: 90A; 625W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Power dissipation: 625W Case: TO268HV Mounting: SMD Kind of package: tube Drain-source voltage: 600V Gate-source voltage: ±20V On-state resistance: 51mΩ Reverse recovery time: 175ns Pulsed drain current: 90A Gate charge: 51nC Polarisation: unipolar Drain current: 60A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |||
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IXGH60N60C3D1 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 600V; 60A; 380W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 60A Power dissipation: 380W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Kind of package: tube Turn-on time: 54ns Turn-off time: 198ns Gate charge: 115nC |
auf Bestellung 290 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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IXGT60N60C3D1 | IXYS |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; GenX3™; 600V; 60A; 380W; TO268 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 60A Power dissipation: 380W Case: TO268 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: SMD Kind of package: tube Turn-on time: 54ns Turn-off time: 198ns Gate charge: 115nC |
auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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IXKH24N60C5 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 24A; 250W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Power dissipation: 250W Case: TO247-3 On-state resistance: 0.165Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: super junction coolmos |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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IXKP24N60C5 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 24A; 250W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Power dissipation: 250W Case: TO220AB On-state resistance: 0.165Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: super junction coolmos |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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IXKP24N60C5M | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 8.5A; TO220FP; 390ns Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 8.5A Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.165Ω Mounting: THT Gate charge: 52nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 390ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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IXTP4N65X2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 4A; 80W; TO220AB Type of transistor: N-MOSFET Technology: X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 4A Power dissipation: 80W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Reverse recovery time: 160ns Gate charge: 8.3nC |
auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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IXTA8N65X2 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO263 Type of transistor: N-MOSFET Technology: X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 150W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 12nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 200ns |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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IXXH110N65C4 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX4™; 650V; 110A; 880W; TO247-3 Type of transistor: IGBT Power dissipation: 880W Case: TO247-3 Mounting: THT Gate charge: 167nC Turn-on time: 71ns Kind of package: tube Turn-off time: 160ns Gate-emitter voltage: ±20V Collector current: 110A Collector-emitter voltage: 650V Technology: GenX4™; Trench; XPT™ Pulsed collector current: 600A |
auf Bestellung 207 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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IXYA15N65C3D1 | IXYS |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO263 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 650V Collector current: 15A Power dissipation: 200W Case: TO263 Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: SMD Gate charge: 19nC Kind of package: tube Turn-on time: 36ns Turn-off time: 102ns |
auf Bestellung 148 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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IXYP15N65C3 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO220-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 650V Collector current: 15A Power dissipation: 200W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: THT Gate charge: 19nC Kind of package: tube Turn-on time: 36ns Turn-off time: 122ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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IXYP15N65C3D1 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO220-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 650V Collector current: 15A Power dissipation: 200W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: THT Gate charge: 19nC Kind of package: tube Turn-on time: 36ns Turn-off time: 102ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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IXYP15N65C3D1M | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 650V; 9A; 57W; TO220FP Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 650V Collector current: 9A Power dissipation: 57W Case: TO220FP Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: THT Gate charge: 19nC Kind of package: tube Turn-on time: 36ns Turn-off time: 122ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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DSS16-0045A | IXYS |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 45V; 16A; TO220AC; Ufmax: 0.57V Power dissipation: 105W Case: TO220AC Mounting: THT Max. off-state voltage: 45V Load current: 16A Max. load current: 35A Kind of package: tube Semiconductor structure: single diode Type of diode: Schottky rectifying Max. forward impulse current: 280A Max. forward voltage: 0.57V |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
| DSS16-0045AS-TUB | IXYS |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SMD; 45V; 16A; tube; 105W Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 45V Load current: 16A Semiconductor structure: single diode Max. forward voltage: 0.57V Max. forward impulse current: 280A Kind of package: tube Power dissipation: 105W Max. load current: 35A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
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IXFA20N50P3 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 20A Power dissipation: 380W Case: TO263 On-state resistance: 0.3Ω Mounting: SMD Gate charge: 36nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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IXFH20N50P3 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 20A Power dissipation: 380W Case: TO247-3 On-state resistance: 0.3Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 139 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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IXFP20N50P3M | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 8A; 58W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 8A Power dissipation: 58W Case: TO220FP On-state resistance: 0.3Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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IXFQ20N50P3 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 20A Power dissipation: 380W Case: TO3P On-state resistance: 0.3Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 131 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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IXTA4N65X2 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 4A; 80W; TO263 Type of transistor: N-MOSFET Technology: X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 4A Power dissipation: 80W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Kind of package: tube Kind of channel: enhancement Reverse recovery time: 160ns Gate charge: 8.3nC |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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IXTY4N65X2 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 4A; 80W; TO252 Type of transistor: N-MOSFET Technology: X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 4A Power dissipation: 80W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Kind of package: tube Kind of channel: enhancement Reverse recovery time: 160ns Gate charge: 8.3nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
| IXKC40N60C | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 28A; ISOPLUS220™; 800ns Type of transistor: N-MOSFET Technology: CoolMOS™ Case: ISOPLUS220™ Mounting: THT Gate charge: 230nC Kind of package: tube Gate-source voltage: ±20V On-state resistance: 95mΩ Reverse recovery time: 800ns Polarisation: unipolar Drain current: 28A Kind of channel: enhancement Drain-source voltage: 600V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
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IXKN40N60C | IXYS |
Category: Transistor modulesDescription: Module; single transistor; 600V; 40A; SOT227B; screw; 290W; 250nC Technology: CoolMOS™ Power dissipation: 290W Case: SOT227B Gate charge: 250nC Gate-source voltage: ±20V Semiconductor structure: single transistor On-state resistance: 70mΩ Reverse recovery time: 650ns Type of semiconductor module: MOSFET transistor Polarisation: unipolar Drain current: 40A Kind of channel: enhancement Drain-source voltage: 600V Mechanical mounting: screw Electrical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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IXKR40N60C | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 38A; 280W; ISOPLUS247™; 650ns Type of transistor: N-MOSFET Power dissipation: 280W Case: ISOPLUS247™ Mounting: THT Gate charge: 250nC Kind of package: tube On-state resistance: 70mΩ Reverse recovery time: 650ns Polarisation: unipolar Features of semiconductor devices: super junction coolmos Drain current: 38A Kind of channel: enhancement Drain-source voltage: 600V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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CPC1008N | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 150mA Switched voltage: max. 100V AC; max. 100V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 8Ω Mounting: SMT Case: SOP4 Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 2ms Turn-off time: 1ms Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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CPC1008NTR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 150mA Switched voltage: max. 100V AC; max. 100V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 8Ω Mounting: SMT Case: SOP4 Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 2ms Turn-off time: 1ms Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||
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IXFP5N100P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1kV; 5A; 250W; TO220AB Mounting: THT Kind of package: tube Type of transistor: N-MOSFET Case: TO220AB Power dissipation: 250W Gate charge: 33.4nC Polarisation: unipolar Drain current: 5A Kind of channel: enhancement Drain-source voltage: 1kV |
auf Bestellung 42 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
|
CPC1017N | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.60VAC Case: SOP4 On-state resistance: 16Ω Body dimensions: 4.09x3.81x2.03mm Operating temperature: -40...85°C Contacts configuration: SPST-NO Insulation voltage: 1.5kV Turn-on time: 10ms Switched voltage: max. 60V AC; max. 60V DC Max. operating current: 0.1A Turn-off time: 10ms Control current max.: 50mA Type of relay: solid state Mounting: SMT Manufacturer series: OptoMOS Relay variant: 1-phase; current source Kind of output: MOSFET |
auf Bestellung 1606 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
|
IXXH30N60B3 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 270W Case: TO247AD Gate-emitter voltage: ±20V Pulsed collector current: 115A Mounting: THT Gate charge: 39nC Kind of package: tube Turn-on time: 23ns Turn-off time: 125ns |
auf Bestellung 224 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IX4428NTR |
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Hersteller: IXYS
Gate Driver IC, 4,5V~35V; 2Ch; Low Side Inv/Non-Inv; 1,2A; 10ns, 8ns; -40°C~125°C; Substitute: IX4428N; IX4428NTR UIIX4428n
Anzahl je Verpackung: 10 Stücke
Gate Driver IC, 4,5V~35V; 2Ch; Low Side Inv/Non-Inv; 1,2A; 10ns, 8ns; -40°C~125°C; Substitute: IX4428N; IX4428NTR UIIX4428n
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 2.34 EUR |
| IXDD604SI |
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Hersteller: IXYS
Driver 4A 2-OUT Low Side Non-Inv Automotive 8-Pin SOIC EP IXDD604SITR; IXDD604SITR UIIXDD604si
Anzahl je Verpackung: 10 Stücke
Driver 4A 2-OUT Low Side Non-Inv Automotive 8-Pin SOIC EP IXDD604SITR; IXDD604SITR UIIXDD604si
Anzahl je Verpackung: 10 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 7.98 EUR |
| IXDD604SIATR |
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Hersteller: IXYS
Gate Driver 2-OUT Low Side Non-Inv; 4A; 9ns; 4.5V~35V; -40°C~125°C; IXDD604SIA IXDD604SIATR UIIXDD604sia
Anzahl je Verpackung: 10 Stücke
Gate Driver 2-OUT Low Side Non-Inv; 4A; 9ns; 4.5V~35V; -40°C~125°C; IXDD604SIA IXDD604SIATR UIIXDD604sia
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 4.33 EUR |
| IXDD609SI |
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Hersteller: IXYS
Driver 9A 1-OUT Low Side Non-Inv Automotive 8-Pin SOIC EP IXDD609SITR IXDD609SI UIIXDD609si
Anzahl je Verpackung: 2 Stücke
Driver 9A 1-OUT Low Side Non-Inv Automotive 8-Pin SOIC EP IXDD609SITR IXDD609SI UIIXDD609si
Anzahl je Verpackung: 2 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 5.65 EUR |
| IXDD609SIA IXYS |
Hersteller: IXYS
Gate Drivers; Low-Side; Ultrafast MOSFET; 1/1; 9A; 22ns; 4.5V~35V; -55°C~150°C; IXDD609SIATR; IXDD609SIA UIIXDD609sia
Anzahl je Verpackung: 10 Stücke
Gate Drivers; Low-Side; Ultrafast MOSFET; 1/1; 9A; 22ns; 4.5V~35V; -55°C~150°C; IXDD609SIATR; IXDD609SIA UIIXDD609sia
Anzahl je Verpackung: 10 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 4.69 EUR |
| IXDD614SI IXYS |
Hersteller: IXYS
Low Side Inverting Driver, 14A Peak, 4.5?35V, -55?150°C IXDD614SI UIIXDD614si
Anzahl je Verpackung: 2 Stücke
Low Side Inverting Driver, 14A Peak, 4.5?35V, -55?150°C IXDD614SI UIIXDD614si
Anzahl je Verpackung: 2 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 11.89 EUR |
| IXDF604SIA IXYS |
Hersteller: IXYS
Driver 4A 2-OUT Low Side Inv/Non-Inv Automotive 8-Pin SOIC IXDF604SIATR IXDF604SIA UIIXDF604sia
Anzahl je Verpackung: 10 Stücke
Driver 4A 2-OUT Low Side Inv/Non-Inv Automotive 8-Pin SOIC IXDF604SIATR IXDF604SIA UIIXDF604sia
Anzahl je Verpackung: 10 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 4.08 EUR |
| IXDI614CI IXYS |
Hersteller: IXYS
Driver 14A 1-OUT Low Side Inv 5-Pin(5+Tab) TO-220 IXDI614CI UIIXDI614ci
Anzahl je Verpackung: 2 Stücke
Driver 14A 1-OUT Low Side Inv 5-Pin(5+Tab) TO-220 IXDI614CI UIIXDI614ci
Anzahl je Verpackung: 2 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 12.55 EUR |
| IXDI630CI |
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Hersteller: IXYS
Driver 30A 1-OUT Low Side Inv 5-Pin(5+Tab) TO-220 IXDI630CI UIIXDI630ci
Anzahl je Verpackung: 2 Stücke
Driver 30A 1-OUT Low Side Inv 5-Pin(5+Tab) TO-220 IXDI630CI UIIXDI630ci
Anzahl je Verpackung: 2 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 19.31 EUR |
| IXDN604PI |
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Hersteller: IXYS
Driver 4A 2-OUT Low Side Non-Inv Automotive 8-Pin PDIP IXDN604PI UIIXDN604pi
Anzahl je Verpackung: 10 Stücke
Driver 4A 2-OUT Low Side Non-Inv Automotive 8-Pin PDIP IXDN604PI UIIXDN604pi
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 4.32 EUR |
| IXDN604SIA |
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Hersteller: IXYS
Driver 4A 2-OUT Low Side Non-Inv Automotive 8-Pin SOIC IXDN604SIA IXDN604SIATR IXDN604SIATR UIIXDN604sia
Anzahl je Verpackung: 10 Stücke
Driver 4A 2-OUT Low Side Non-Inv Automotive 8-Pin SOIC IXDN604SIA IXDN604SIATR IXDN604SIATR UIIXDN604sia
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 4.72 EUR |
| IXDN609SIATR |
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Hersteller: IXYS
Driver 9A 1-OUT Low Side Non-Inv Automotive 8-Pin SOIC IXDN609SIA UIIXDN609sia
Anzahl je Verpackung: 5 Stücke
Driver 9A 1-OUT Low Side Non-Inv Automotive 8-Pin SOIC IXDN609SIA UIIXDN609sia
Anzahl je Verpackung: 5 Stücke
auf Bestellung 45 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 3.83 EUR |
| IXDN609YI |
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Hersteller: IXYS
Gate Drivers; Low-Side; Ultrafast MOSFET; 1/1; 9A; 22ns; 4.5V~35V; -55°C~150°C; IXDN609YI UIIXDN609yi
Anzahl je Verpackung: 2 Stücke
Gate Drivers; Low-Side; Ultrafast MOSFET; 1/1; 9A; 22ns; 4.5V~35V; -55°C~150°C; IXDN609YI UIIXDN609yi
Anzahl je Verpackung: 2 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 9.73 EUR |
| IXDN614SITR |
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Hersteller: IXYS
Driver; 14A; 1-OUT Low Side Non-Inv; 1-CH; 4,5V~35V; -40°C~125°C; Substitute: IXDN614SI; IXDN614SITR; IXDN614SI UIIXDN614si
Anzahl je Verpackung: 2 Stücke
Driver; 14A; 1-OUT Low Side Non-Inv; 1-CH; 4,5V~35V; -40°C~125°C; Substitute: IXDN614SI; IXDN614SITR; IXDN614SI UIIXDN614si
Anzahl je Verpackung: 2 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 13.39 EUR |
| IXGR48N60C3D1 |
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Hersteller: IXYS
Trans IGBT Chip N-CH 600V 56A 125000mW 3-Pin(3+Tab) ISOPLUS 247 IXGR48N60C3D1 TIXGR48n60c3d1
Anzahl je Verpackung: 2 Stücke
Trans IGBT Chip N-CH 600V 56A 125000mW 3-Pin(3+Tab) ISOPLUS 247 IXGR48N60C3D1 TIXGR48n60c3d1
Anzahl je Verpackung: 2 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 33.27 EUR |
| CLA30E1200HB |
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Hersteller: IXYS
Thyristor; 47A; 1200V; 28mA; CLA30E1200HB TYCLA30e1200hb
Anzahl je Verpackung: 5 Stücke
Thyristor; 47A; 1200V; 28mA; CLA30E1200HB TYCLA30e1200hb
Anzahl je Verpackung: 5 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 9.04 EUR |
| CLA30E1200PB |
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Hersteller: IXYS
Thyristor; 47A; 1200V; 30mA; CLA30E1200PB TYCLA30e1200pb
Anzahl je Verpackung: 5 Stücke
Thyristor; 47A; 1200V; 30mA; CLA30E1200PB TYCLA30e1200pb
Anzahl je Verpackung: 5 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 9.16 EUR |
| CLA80E1200HF |
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Hersteller: IXYS
Thyristor; 126A; 1200V; 38mA; CLA80E1200HF TYCLA80e1200hf
Anzahl je Verpackung: 2 Stücke
Thyristor; 126A; 1200V; 38mA; CLA80E1200HF TYCLA80e1200hf
Anzahl je Verpackung: 2 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 20.15 EUR |
| CS19-08ho1 |
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auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 6.26 EUR |
| CS19-12HO1 IXYS |
Hersteller: IXYS
It=31A; Vdrm=1,2kV; Igt=50mA; CS19-12HO1 TYCS19-12ho1
Anzahl je Verpackung: 10 Stücke
It=31A; Vdrm=1,2kV; Igt=50mA; CS19-12HO1 TYCS19-12ho1
Anzahl je Verpackung: 10 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 6.28 EUR |
| CS20-14IO1 IXYS |
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 13.17 EUR |
| CS20-16IO1 IXYS |
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 13.05 EUR |
| MCC26-12IO8B IXYS |
Hersteller: IXYS
Module; double series; 1.2kV; 27A; TO240AA; Ufmax: 1.27V; Ifsm: 440A MCC26-12IO8B MO MCC26-12IO8B
Anzahl je Verpackung: 1 Stücke
Module; double series; 1.2kV; 27A; TO240AA; Ufmax: 1.27V; Ifsm: 440A MCC26-12IO8B MO MCC26-12IO8B
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 78.19 EUR |
| CPC1303GR IXYS |
Hersteller: IXYS
Optocoupler; channels: 1; CTR: 200-2500%; PDIP04smd; transistor; 5 kVrms; 30 V CPC1303GR , CPC1303GRTR CPC1303GR OOCPC1303gr
Anzahl je Verpackung: 10 Stücke
Optocoupler; channels: 1; CTR: 200-2500%; PDIP04smd; transistor; 5 kVrms; 30 V CPC1303GR , CPC1303GRTR CPC1303GR OOCPC1303gr
Anzahl je Verpackung: 10 Stücke
auf Bestellung 278 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 3.3 EUR |
| CPC1006N IXYS SSR |
Hersteller: IXYS
SPST-NO; 60VDC; 50mA; SOP-4 CPC1006NTR CPC1006N P CPC1006N
Anzahl je Verpackung: 10 Stücke
SPST-NO; 60VDC; 50mA; SOP-4 CPC1006NTR CPC1006N P CPC1006N
Anzahl je Verpackung: 10 Stücke
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 3.43 EUR |
| CPC1014N |
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Hersteller: IXYS
400mA; 60V AC/DC; SPST-NO; SOP-4; 4,09 x 3,81 x 2,03mm; SSR; CPC1014NTR P CPC1014N
Anzahl je Verpackung: 10 Stücke
400mA; 60V AC/DC; SPST-NO; SOP-4; 4,09 x 3,81 x 2,03mm; SSR; CPC1014NTR P CPC1014N
Anzahl je Verpackung: 10 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 3.97 EUR |
| CPC1018N |
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Hersteller: IXYS
Relay SSR 50mA 1.5V DC-IN 0.6A 60V AC/DC-OUT 4-Pin SOP Tube CPC1018NTR CPC1018NTR P CPC1018N
Anzahl je Verpackung: 10 Stücke
Relay SSR 50mA 1.5V DC-IN 0.6A 60V AC/DC-OUT 4-Pin SOP Tube CPC1018NTR CPC1018NTR P CPC1018N
Anzahl je Verpackung: 10 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 7.37 EUR |
| IXFH50N60P3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO247-3
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 0.16Ω
Gate charge: 94nC
Polarisation: unipolar
Drain current: 50A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO247-3
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 0.16Ω
Gate charge: 94nC
Polarisation: unipolar
Drain current: 50A
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFQ50N60P3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO3P
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Case: TO3P
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 0.16Ω
Gate charge: 94nC
Polarisation: unipolar
Drain current: 50A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO3P
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Case: TO3P
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 0.16Ω
Gate charge: 94nC
Polarisation: unipolar
Drain current: 50A
auf Bestellung 180 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFH60N60X3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 60A; Idm: 90A; 625W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Power dissipation: 625W
Case: TO247-3
Mounting: THT
Kind of package: tube
Drain-source voltage: 600V
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Reverse recovery time: 175ns
Pulsed drain current: 90A
Gate charge: 51nC
Polarisation: unipolar
Drain current: 60A
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 60A; Idm: 90A; 625W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Power dissipation: 625W
Case: TO247-3
Mounting: THT
Kind of package: tube
Drain-source voltage: 600V
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Reverse recovery time: 175ns
Pulsed drain current: 90A
Gate charge: 51nC
Polarisation: unipolar
Drain current: 60A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFQ60N60X |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 60A; 890W; TO3P; 200ns
Type of transistor: N-MOSFET
Power dissipation: 890W
Case: TO3P
Mounting: THT
Kind of package: tube
Drain-source voltage: 600V
On-state resistance: 55mΩ
Reverse recovery time: 200ns
Gate charge: 143nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 60A
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 60A; 890W; TO3P; 200ns
Type of transistor: N-MOSFET
Power dissipation: 890W
Case: TO3P
Mounting: THT
Kind of package: tube
Drain-source voltage: 600V
On-state resistance: 55mΩ
Reverse recovery time: 200ns
Gate charge: 143nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 60A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFT60N60X3HV |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 60A; Idm: 90A; 625W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Power dissipation: 625W
Case: TO268HV
Mounting: SMD
Kind of package: tube
Drain-source voltage: 600V
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Reverse recovery time: 175ns
Pulsed drain current: 90A
Gate charge: 51nC
Polarisation: unipolar
Drain current: 60A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 60A; Idm: 90A; 625W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Power dissipation: 625W
Case: TO268HV
Mounting: SMD
Kind of package: tube
Drain-source voltage: 600V
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Reverse recovery time: 175ns
Pulsed drain current: 90A
Gate charge: 51nC
Polarisation: unipolar
Drain current: 60A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXGH60N60C3D1 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 60A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 380W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 198ns
Gate charge: 115nC
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 60A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 380W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 198ns
Gate charge: 115nC
auf Bestellung 290 Stücke:
Lieferzeit 14-21 Tag (e)
| IXGT60N60C3D1 |
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Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 60A; 380W; TO268
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 380W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: SMD
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 198ns
Gate charge: 115nC
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 60A; 380W; TO268
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 380W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: SMD
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 198ns
Gate charge: 115nC
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
| IXKH24N60C5 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 250W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 250W
Case: TO247-3
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 250W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 250W
Case: TO247-3
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXKP24N60C5 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
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| IXKP24N60C5M |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.5A; TO220FP; 390ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.5A
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.5A; TO220FP; 390ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.5A
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IXTP4N65X2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 4A; 80W; TO220AB
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Power dissipation: 80W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 160ns
Gate charge: 8.3nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 4A; 80W; TO220AB
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Power dissipation: 80W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 160ns
Gate charge: 8.3nC
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTA8N65X2 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO263
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO263
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
| IXXH110N65C4 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; TO247-3
Type of transistor: IGBT
Power dissipation: 880W
Case: TO247-3
Mounting: THT
Gate charge: 167nC
Turn-on time: 71ns
Kind of package: tube
Turn-off time: 160ns
Gate-emitter voltage: ±20V
Collector current: 110A
Collector-emitter voltage: 650V
Technology: GenX4™; Trench; XPT™
Pulsed collector current: 600A
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; TO247-3
Type of transistor: IGBT
Power dissipation: 880W
Case: TO247-3
Mounting: THT
Gate charge: 167nC
Turn-on time: 71ns
Kind of package: tube
Turn-off time: 160ns
Gate-emitter voltage: ±20V
Collector current: 110A
Collector-emitter voltage: 650V
Technology: GenX4™; Trench; XPT™
Pulsed collector current: 600A
auf Bestellung 207 Stücke:
Lieferzeit 14-21 Tag (e)
| IXYA15N65C3D1 |
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Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 200W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 19nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 102ns
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 200W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 19nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 102ns
auf Bestellung 148 Stücke:
Lieferzeit 14-21 Tag (e)
| IXYP15N65C3 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 200W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 122ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 200W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 122ns
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| IXYP15N65C3D1 |
![]() |
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 200W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 102ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 200W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 102ns
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IXYP15N65C3D1M |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 9A; 57W; TO220FP
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 9A
Power dissipation: 57W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 122ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 9A; 57W; TO220FP
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 9A
Power dissipation: 57W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 122ns
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| DSS16-0045A |
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Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 16A; TO220AC; Ufmax: 0.57V
Power dissipation: 105W
Case: TO220AC
Mounting: THT
Max. off-state voltage: 45V
Load current: 16A
Max. load current: 35A
Kind of package: tube
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward impulse current: 280A
Max. forward voltage: 0.57V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 16A; TO220AC; Ufmax: 0.57V
Power dissipation: 105W
Case: TO220AC
Mounting: THT
Max. off-state voltage: 45V
Load current: 16A
Max. load current: 35A
Kind of package: tube
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward impulse current: 280A
Max. forward voltage: 0.57V
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
| DSS16-0045AS-TUB |
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Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 16A; tube; 105W
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 16A
Semiconductor structure: single diode
Max. forward voltage: 0.57V
Max. forward impulse current: 280A
Kind of package: tube
Power dissipation: 105W
Max. load current: 35A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 16A; tube; 105W
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 16A
Semiconductor structure: single diode
Max. forward voltage: 0.57V
Max. forward impulse current: 280A
Kind of package: tube
Power dissipation: 105W
Max. load current: 35A
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IXFA20N50P3 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO263
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO263
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFH20N50P3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 139 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFP20N50P3M |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; 58W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Power dissipation: 58W
Case: TO220FP
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; 58W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Power dissipation: 58W
Case: TO220FP
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| IXFQ20N50P3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO3P
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO3P
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 131 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTA4N65X2 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 4A; 80W; TO263
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Power dissipation: 80W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 160ns
Gate charge: 8.3nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 4A; 80W; TO263
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Power dissipation: 80W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 160ns
Gate charge: 8.3nC
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTY4N65X2 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 4A; 80W; TO252
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Power dissipation: 80W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 160ns
Gate charge: 8.3nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 4A; 80W; TO252
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Power dissipation: 80W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 160ns
Gate charge: 8.3nC
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| IXKC40N60C | ![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; ISOPLUS220™; 800ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Case: ISOPLUS220™
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Reverse recovery time: 800ns
Polarisation: unipolar
Drain current: 28A
Kind of channel: enhancement
Drain-source voltage: 600V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; ISOPLUS220™; 800ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Case: ISOPLUS220™
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Reverse recovery time: 800ns
Polarisation: unipolar
Drain current: 28A
Kind of channel: enhancement
Drain-source voltage: 600V
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| IXKN40N60C |
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Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 600V; 40A; SOT227B; screw; 290W; 250nC
Technology: CoolMOS™
Power dissipation: 290W
Case: SOT227B
Gate charge: 250nC
Gate-source voltage: ±20V
Semiconductor structure: single transistor
On-state resistance: 70mΩ
Reverse recovery time: 650ns
Type of semiconductor module: MOSFET transistor
Polarisation: unipolar
Drain current: 40A
Kind of channel: enhancement
Drain-source voltage: 600V
Mechanical mounting: screw
Electrical mounting: screw
Category: Transistor modules
Description: Module; single transistor; 600V; 40A; SOT227B; screw; 290W; 250nC
Technology: CoolMOS™
Power dissipation: 290W
Case: SOT227B
Gate charge: 250nC
Gate-source voltage: ±20V
Semiconductor structure: single transistor
On-state resistance: 70mΩ
Reverse recovery time: 650ns
Type of semiconductor module: MOSFET transistor
Polarisation: unipolar
Drain current: 40A
Kind of channel: enhancement
Drain-source voltage: 600V
Mechanical mounting: screw
Electrical mounting: screw
Produkt ist nicht verfügbar
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| IXKR40N60C |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 38A; 280W; ISOPLUS247™; 650ns
Type of transistor: N-MOSFET
Power dissipation: 280W
Case: ISOPLUS247™
Mounting: THT
Gate charge: 250nC
Kind of package: tube
On-state resistance: 70mΩ
Reverse recovery time: 650ns
Polarisation: unipolar
Features of semiconductor devices: super junction coolmos
Drain current: 38A
Kind of channel: enhancement
Drain-source voltage: 600V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 38A; 280W; ISOPLUS247™; 650ns
Type of transistor: N-MOSFET
Power dissipation: 280W
Case: ISOPLUS247™
Mounting: THT
Gate charge: 250nC
Kind of package: tube
On-state resistance: 70mΩ
Reverse recovery time: 650ns
Polarisation: unipolar
Features of semiconductor devices: super junction coolmos
Drain current: 38A
Kind of channel: enhancement
Drain-source voltage: 600V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| CPC1008N |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 100V AC; max. 100V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 100V AC; max. 100V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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| CPC1008NTR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 100V AC; max. 100V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 100V AC; max. 100V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| IXFP5N100P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 5A; 250W; TO220AB
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Case: TO220AB
Power dissipation: 250W
Gate charge: 33.4nC
Polarisation: unipolar
Drain current: 5A
Kind of channel: enhancement
Drain-source voltage: 1kV
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 5A; 250W; TO220AB
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Case: TO220AB
Power dissipation: 250W
Gate charge: 33.4nC
Polarisation: unipolar
Drain current: 5A
Kind of channel: enhancement
Drain-source voltage: 1kV
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
| CPC1017N |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.60VAC
Case: SOP4
On-state resistance: 16Ω
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 10ms
Switched voltage: max. 60V AC; max. 60V DC
Max. operating current: 0.1A
Turn-off time: 10ms
Control current max.: 50mA
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.60VAC
Case: SOP4
On-state resistance: 16Ω
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 10ms
Switched voltage: max. 60V AC; max. 60V DC
Max. operating current: 0.1A
Turn-off time: 10ms
Control current max.: 50mA
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
auf Bestellung 1606 Stücke:
Lieferzeit 14-21 Tag (e)
| IXXH30N60B3 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 270W
Case: TO247AD
Gate-emitter voltage: ±20V
Pulsed collector current: 115A
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Turn-on time: 23ns
Turn-off time: 125ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 270W
Case: TO247AD
Gate-emitter voltage: ±20V
Pulsed collector current: 115A
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Turn-on time: 23ns
Turn-off time: 125ns
auf Bestellung 224 Stücke:
Lieferzeit 14-21 Tag (e)
















