Produkte > IXYS > Alle Produkte des Herstellers IXYS (15225) > Seite 233 nach 254

Wählen Sie Seite:   [  << Vorherige Seite ]  1 25 50 75 100 125 150 175 200 225 228 229 230 231 232 233 234 235 236 237 238 250 254  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IXFB82N60P IXFB82N60P IXYS IXFB82N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 82A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 82A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 200ns
auf Bestellung 97 Stücke:
Lieferzeit 14-21 Tag (e)
3+31.59 EUR
5+28.31 EUR
25+27.9 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IXFH36N60P IXFH36N60P IXYS IXFH(K,T)36N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 270 Stücke:
Lieferzeit 14-21 Tag (e)
6+13.64 EUR
7+10.24 EUR
10+9.67 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IXFN180N25T IXFN180N25T IXYS IXFN180N25T.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 168A; SOT227B; screw; Idm: 500A
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Kind of channel: enhancement
Polarisation: unipolar
Gate-source voltage: ±30V
Reverse recovery time: 200ns
Gate charge: 364nC
On-state resistance: 12.9mΩ
Technology: GigaMOS™
Drain current: 168A
Pulsed drain current: 500A
Drain-source voltage: 250V
Power dissipation: 900W
auf Bestellung 213 Stücke:
Lieferzeit 14-21 Tag (e)
3+30.67 EUR
5+26.44 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IXFA34N65X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfa34n65x3-datasheet?assetguid=7bd01bfc-f3d8-4755-8e6c-5e250cb5176f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFH34N65X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh34n65x3-datasheet?assetguid=965e45cd-8715-4cf1-b85d-adaafdfc5ec2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXKH47N60C IXKH47N60C IXYS IXKH47N60C.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 290W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 250nC
Features of semiconductor devices: super junction coolmos
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH90P10P IXTH90P10P IXYS IXT_90P10P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -90A; 462W; TO247-3
Case: TO247-3
Type of transistor: P-MOSFET
Mounting: THT
Technology: PolarP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -90A
Reverse recovery time: 144ns
Gate charge: 0.12µC
On-state resistance: 25mΩ
Gate-source voltage: ±20V
Power dissipation: 462W
Kind of channel: enhancement
auf Bestellung 104 Stücke:
Lieferzeit 14-21 Tag (e)
6+13.3 EUR
7+11.05 EUR
10+9.8 EUR
30+8.75 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IXTQ22N50P IXTQ22N50P IXYS IXTH(Q,V)22N50P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO3P
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
auf Bestellung 308 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.99 EUR
13+5.72 EUR
15+5.09 EUR
30+4.46 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IXFH22N50P IXFH22N50P IXYS IXFH22N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 108 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.55 EUR
11+6.76 EUR
30+5.46 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IXTH22N50P IXTH22N50P IXYS IXTH(Q,V)22N50P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFH40N50Q IXFH40N50Q IXYS IXFH40N50Q.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH40N50L2 IXTH40N50L2 IXYS IXTH(T,Q)40N50L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: linear power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTQ40N50L2 IXTQ40N50L2 IXYS IXTH(T,Q)40N50L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO3P
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: linear power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTT40N50L2 IXTT40N50L2 IXYS IXTH(T,Q)40N50L2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO268
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: linear power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTY14N60X2 IXTY14N60X2 IXYS ixty2n65x2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 180W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 16.7nC
Pulsed drain current: 18A
auf Bestellung 342 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.51 EUR
17+4.25 EUR
25+3.73 EUR
70+3.66 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IXFN420N10T IXFN420N10T IXYS IXFN420N10T.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 420A; SOT227B; screw; Idm: 1kA
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Kind of channel: enhancement
Polarisation: unipolar
Gate-source voltage: ±30V
Reverse recovery time: 140ns
Gate charge: 670nC
On-state resistance: 2.3mΩ
Technology: GigaMOS™; HiPerFET™
Drain current: 420A
Pulsed drain current: 1kA
Drain-source voltage: 100V
Power dissipation: 1.07kW
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
3+35.61 EUR
5+31.47 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IXTH24N50L IXTH24N50L IXYS IXTH24N50L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 400W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTQ460P2 IXTQ460P2 IXYS IXTQ460P2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar2™; unipolar; 500V; 24A; 480W; TO3P
Type of transistor: N-MOSFET
Technology: Polar2™
Kind of package: tube
Case: TO3P
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Gate charge: 48nC
Reverse recovery time: 400ns
On-state resistance: 0.27Ω
Power dissipation: 480W
Gate-source voltage: ±30V
Kind of channel: enhancement
Mounting: THT
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.84 EUR
12+6.03 EUR
14+5.45 EUR
30+4.83 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IXFN210N30X3 IXFN210N30X3 IXYS IXFN210N30X3.pdf 300VProductBrief.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 210A; SOT227B; screw; Idm: 650A
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Kind of channel: enhancement
Polarisation: unipolar
Gate-source voltage: ±20V
Reverse recovery time: 190ns
Gate charge: 375nC
On-state resistance: 4.6mΩ
Technology: HiPerFET™; X3-Class
Drain current: 210A
Pulsed drain current: 650A
Drain-source voltage: 300V
Power dissipation: 695W
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
2+55.77 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
LF2304NTR LF2304NTR IXYS LF2304NTR.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYH30N65C3 IXYH30N65C3 IXYS IXYH(P)30N65C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 59ns
Gate charge: 44nC
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH64N65X IXTH64N65X IXYS IXTH64N65X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 64A; 890W; TO247-3; 450ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 64A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 51mΩ
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 450ns
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN140N30P IXFN140N30P IXYS IXFN140N30P.pdf description Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 110A; SOT227B; screw; Idm: 300A
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Kind of channel: enhancement
Polarisation: unipolar
Gate-source voltage: ±30V
Reverse recovery time: 200ns
Gate charge: 185nC
On-state resistance: 24mΩ
Technology: HiPerFET™; Polar™
Drain current: 110A
Pulsed drain current: 300A
Drain-source voltage: 300V
Power dissipation: 700W
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
2+42.03 EUR
5+36.12 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXFN132N50P3 IXFN132N50P3 IXYS IXFN132N50P3.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 112A; SOT227B; screw; Idm: 330A
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Kind of channel: enhancement
Polarisation: unipolar
Gate-source voltage: ±40V
Reverse recovery time: 250ns
Gate charge: 250nC
On-state resistance: 39mΩ
Technology: HiPerFET™; Polar™
Drain current: 112A
Pulsed drain current: 330A
Drain-source voltage: 500V
Power dissipation: 1.5kW
auf Bestellung 278 Stücke:
Lieferzeit 14-21 Tag (e)
2+49.34 EUR
5+46.3 EUR
10+45.59 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXFN210N20P IXFN210N20P IXYS IXFN210N20P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 188A; SOT227B; screw; Idm: 600A
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Kind of channel: enhancement
Polarisation: unipolar
Gate-source voltage: ±30V
Reverse recovery time: 200ns
Gate charge: 255nC
On-state resistance: 10.5mΩ
Technology: HiPerFET™; Polar™
Drain current: 188A
Pulsed drain current: 600A
Drain-source voltage: 200V
Power dissipation: 1.07kW
auf Bestellung 299 Stücke:
Lieferzeit 14-21 Tag (e)
2+46.93 EUR
10+42.99 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXFN44N100P IXFN44N100P IXYS IXFN44N100P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 37A; SOT227B; screw; Idm: 110A; 890W
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Kind of channel: enhancement
Polarisation: unipolar
Gate-source voltage: ±40V
Reverse recovery time: 300ns
Gate charge: 0.35µC
On-state resistance: 0.22Ω
Technology: HiPerFET™; Polar™
Drain current: 37A
Pulsed drain current: 110A
Drain-source voltage: 1kV
Power dissipation: 890W
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
2+43.59 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXFH15N100P IXFH15N100P IXYS IXFH15N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 15A; 543W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 543W
Case: TO247-3
On-state resistance: 760mΩ
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 248 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.48 EUR
10+11.04 EUR
30+9.91 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IXFA5N100P IXFA5N100P IXYS IXFA(H,P)5N100P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 5A; 250W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 5A
Power dissipation: 250W
Case: TO263
Mounting: SMD
Gate charge: 33.4nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTP05N100P IXTP05N100P IXYS IXTP05N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.5A; 50W; TO220AB; 750ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.5A
Power dissipation: 50W
Case: TO220AB
On-state resistance: 30Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 750ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTP05N100 IXTP05N100 IXYS IXTA(P)05N100_HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO220AB; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO220AB
On-state resistance: 17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTA05N100 IXTA05N100 IXYS IXTA(P)05N100_HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO263
On-state resistance: 17Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTP05N100M IXTP05N100M IXYS IXTP05N100M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.7A; 25W; TO220FP; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.7A
Power dissipation: 25W
Case: TO220FP
On-state resistance: 17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFH15N100Q3 IXFH15N100Q3 IXYS IXF_15N100Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 1kV; 15A; 690W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 690W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
auf Bestellung 195 Stücke:
Lieferzeit 14-21 Tag (e)
4+19.02 EUR
5+16.03 EUR
10+15.72 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXFT15N100Q3 IXFT15N100Q3 IXYS IXF_15N100Q3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 690W
Case: TO268
On-state resistance: 1.05Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DSEC16-12A DSEC16-12A IXYS DSEC16-12A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8Ax2; tube; Ifsm: 40A; TO220AB; 60W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A x2
Reverse recovery time: 40ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Case: TO220AB
Max. forward voltage: 2.94V
Max. forward impulse current: 40A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Power dissipation: 60W
Technology: HiPerFRED™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DSEC16-12AS-TUB IXYS DSEC16-12AS.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8Ax2; 40ns; D2PAK; Ufmax: 1.96V; 60W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A x2
Reverse recovery time: 40ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Case: D2PAK
Max. forward voltage: 1.96V
Max. forward impulse current: 40A
Kind of package: tube
Power dissipation: 60W
Technology: HiPerFRED™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTP4N80P IXTP4N80P IXYS IXTA(P)4N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 8A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: THT
Gate charge: 14.2nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 560ns
Features of semiconductor devices: standard power mosfet
auf Bestellung 312 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.09 EUR
50+1.94 EUR
250+1.82 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
IXFK44N80P IXFK44N80P IXYS IXFK(X)44N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 216 Stücke:
Lieferzeit 14-21 Tag (e)
4+20.35 EUR
5+19.09 EUR
10+18.9 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXFK44N80Q3 IXFK44N80Q3 IXYS IXFK(X)44N80Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
4+19.26 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXFR24N80P IXFR24N80P IXYS IXFR24N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; 208W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Power dissipation: 208W
Case: ISOPLUS247™
On-state resistance: 0.42Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.41 EUR
6+12.93 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXFK24N80P IXFK24N80P IXYS IXFH(K,T)24N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO264
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTA4N80P IXTA4N80P IXYS IXTA(P)4N80P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 8A
Power dissipation: 100W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: SMD
Gate charge: 14.2nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 560ns
Features of semiconductor devices: standard power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFH24N80P IXFH24N80P IXYS IXFH(K,T)24N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFH14N80P IXFH14N80P IXYS IXFH(Q,T)14N80P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 14A; 400W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 720mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 280 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.4 EUR
10+8.58 EUR
30+6.44 EUR
120+5.76 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXFX34N80 IXFX34N80 IXYS IXFK(X)34N80.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Power dissipation: 568W
Case: PLUS247™
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFR44N80P IXFR44N80P IXYS IXFR44N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 26A; 360W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 26A
Power dissipation: 360W
Case: ISOPLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT14N80P IXFT14N80P IXYS IXFH(Q,T)14N80P_S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 14A; 400W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 400W
Case: TO268
On-state resistance: 720mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFX44N80P IXFX44N80P IXYS IXFK(X)44N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFK34N80 IXFK34N80 IXYS IXFK(X)34N80.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Power dissipation: 568W
Case: TO264
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN44N80Q3 IXFN44N80Q3 IXYS IXFN44N80Q3.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 37A; SOT227B; screw; Idm: 130A
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 37A
Pulsed drain current: 130A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.19Ω
Gate charge: 185nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFH22N65X2 IXFH22N65X2 IXYS IXF_22N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22A; 390W; TO247-3; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO247-3
On-state resistance: 0.145Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 37nC
Reverse recovery time: 145ns
auf Bestellung 189 Stücke:
Lieferzeit 14-21 Tag (e)
11+7.08 EUR
12+6.32 EUR
13+5.75 EUR
30+4.78 EUR
60+4.7 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IXFP22N65X2 IXFP22N65X2 IXYS IXF_22N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22A; 390W; TO220AB; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO220AB
On-state resistance: 0.145Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 37nC
Reverse recovery time: 145ns
auf Bestellung 223 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.45 EUR
18+3.98 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IXFP22N65X2M IXFP22N65X2M IXYS IXFP22N65X2M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 37W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 37W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 37nC
Reverse recovery time: 145ns
auf Bestellung 238 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.75 EUR
22+3.29 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
CLA100E1200KB CLA100E1200KB IXYS CLA100E1200KB.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 160A; 100A; Igt: 80mA; TO264; THT; tube
Mounting: THT
Type of thyristor: thyristor
Case: TO264
Kind of package: tube
Gate current: 80mA
Load current: 100A
Max. load current: 160A
Max. forward impulse current: 1.19kA
Max. off-state voltage: 1.2kV
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.78 EUR
8+10.15 EUR
10+8.51 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
CPC1972G CPC1972G IXYS CPC1972.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 250mA
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Case: DIP6
Switching method: zero voltage switching
Mounting: THT
Type of relay: solid state
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.85 EUR
28+2.63 EUR
29+2.49 EUR
50+2.39 EUR
100+2.27 EUR
250+2.16 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
CPC1972GS CPC1972GS IXYS CPC1972.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Case: DIP6
Mounting: SMT
Type of relay: solid state
Switching method: zero voltage switching
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CPC1972GSTR IXYS CPC1972.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Case: DIP6
Mounting: SMT
Type of relay: solid state
Switching method: zero voltage switching
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFH10N80P IXFH10N80P IXYS IXFA(H,P,Q)10N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 40nC
Drain current: 10A
Power dissipation: 300W
Drain-source voltage: 800V
auf Bestellung 251 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.66 EUR
16+4.53 EUR
30+4.26 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IXFP10N80P IXFP10N80P IXYS IXFA(H,P,Q)10N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 40nC
auf Bestellung 297 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.75 EUR
50+4.68 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IXFA10N80P IXFA10N80P IXYS IXFA(H,P,Q)10N80P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 40nC
auf Bestellung 263 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.15 EUR
16+4.58 EUR
21+3.55 EUR
50+3.3 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IXFB82N60P IXFB82N60P.pdf
IXFB82N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 82A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 82A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 200ns
auf Bestellung 97 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+31.59 EUR
5+28.31 EUR
25+27.9 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IXFH36N60P IXFH(K,T)36N60P.pdf
IXFH36N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 270 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.64 EUR
7+10.24 EUR
10+9.67 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IXFN180N25T IXFN180N25T.pdf
IXFN180N25T
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 168A; SOT227B; screw; Idm: 500A
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Kind of channel: enhancement
Polarisation: unipolar
Gate-source voltage: ±30V
Reverse recovery time: 200ns
Gate charge: 364nC
On-state resistance: 12.9mΩ
Technology: GigaMOS™
Drain current: 168A
Pulsed drain current: 500A
Drain-source voltage: 250V
Power dissipation: 900W
auf Bestellung 213 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+30.67 EUR
5+26.44 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IXFA34N65X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfa34n65x3-datasheet?assetguid=7bd01bfc-f3d8-4755-8e6c-5e250cb5176f
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFH34N65X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh34n65x3-datasheet?assetguid=965e45cd-8715-4cf1-b85d-adaafdfc5ec2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXKH47N60C IXKH47N60C.pdf
IXKH47N60C
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 290W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 250nC
Features of semiconductor devices: super junction coolmos
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH90P10P IXT_90P10P.pdf
IXTH90P10P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -90A; 462W; TO247-3
Case: TO247-3
Type of transistor: P-MOSFET
Mounting: THT
Technology: PolarP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -90A
Reverse recovery time: 144ns
Gate charge: 0.12µC
On-state resistance: 25mΩ
Gate-source voltage: ±20V
Power dissipation: 462W
Kind of channel: enhancement
auf Bestellung 104 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.3 EUR
7+11.05 EUR
10+9.8 EUR
30+8.75 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IXTQ22N50P IXTH(Q,V)22N50P_S.pdf
IXTQ22N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO3P
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
auf Bestellung 308 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.99 EUR
13+5.72 EUR
15+5.09 EUR
30+4.46 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IXFH22N50P IXFH22N50P.pdf
IXFH22N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 108 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.55 EUR
11+6.76 EUR
30+5.46 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IXTH22N50P IXTH(Q,V)22N50P_S.pdf
IXTH22N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFH40N50Q IXFH40N50Q.pdf
IXFH40N50Q
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH40N50L2 IXTH(T,Q)40N50L2.pdf
IXTH40N50L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: linear power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTQ40N50L2 IXTH(T,Q)40N50L2.pdf
IXTQ40N50L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO3P
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: linear power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTT40N50L2 IXTH(T,Q)40N50L2.pdf
IXTT40N50L2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO268
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: linear power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTY14N60X2 ixty2n65x2.pdf
IXTY14N60X2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 180W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 16.7nC
Pulsed drain current: 18A
auf Bestellung 342 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.51 EUR
17+4.25 EUR
25+3.73 EUR
70+3.66 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IXFN420N10T IXFN420N10T.pdf
IXFN420N10T
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 420A; SOT227B; screw; Idm: 1kA
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Kind of channel: enhancement
Polarisation: unipolar
Gate-source voltage: ±30V
Reverse recovery time: 140ns
Gate charge: 670nC
On-state resistance: 2.3mΩ
Technology: GigaMOS™; HiPerFET™
Drain current: 420A
Pulsed drain current: 1kA
Drain-source voltage: 100V
Power dissipation: 1.07kW
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+35.61 EUR
5+31.47 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IXTH24N50L IXTH24N50L.pdf
IXTH24N50L
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 400W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTQ460P2 IXTQ460P2.pdf
IXTQ460P2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar2™; unipolar; 500V; 24A; 480W; TO3P
Type of transistor: N-MOSFET
Technology: Polar2™
Kind of package: tube
Case: TO3P
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Gate charge: 48nC
Reverse recovery time: 400ns
On-state resistance: 0.27Ω
Power dissipation: 480W
Gate-source voltage: ±30V
Kind of channel: enhancement
Mounting: THT
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.84 EUR
12+6.03 EUR
14+5.45 EUR
30+4.83 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IXFN210N30X3 IXFN210N30X3.pdf 300VProductBrief.pdf
IXFN210N30X3
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 210A; SOT227B; screw; Idm: 650A
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Kind of channel: enhancement
Polarisation: unipolar
Gate-source voltage: ±20V
Reverse recovery time: 190ns
Gate charge: 375nC
On-state resistance: 4.6mΩ
Technology: HiPerFET™; X3-Class
Drain current: 210A
Pulsed drain current: 650A
Drain-source voltage: 300V
Power dissipation: 695W
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+55.77 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
LF2304NTR LF2304NTR.pdf
LF2304NTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYH30N65C3 IXYH(P)30N65C3.pdf
IXYH30N65C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 59ns
Gate charge: 44nC
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH64N65X IXTH64N65X.pdf
IXTH64N65X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 64A; 890W; TO247-3; 450ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 64A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 51mΩ
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 450ns
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN140N30P description IXFN140N30P.pdf
IXFN140N30P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 110A; SOT227B; screw; Idm: 300A
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Kind of channel: enhancement
Polarisation: unipolar
Gate-source voltage: ±30V
Reverse recovery time: 200ns
Gate charge: 185nC
On-state resistance: 24mΩ
Technology: HiPerFET™; Polar™
Drain current: 110A
Pulsed drain current: 300A
Drain-source voltage: 300V
Power dissipation: 700W
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+42.03 EUR
5+36.12 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXFN132N50P3 IXFN132N50P3.pdf
IXFN132N50P3
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 112A; SOT227B; screw; Idm: 330A
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Kind of channel: enhancement
Polarisation: unipolar
Gate-source voltage: ±40V
Reverse recovery time: 250ns
Gate charge: 250nC
On-state resistance: 39mΩ
Technology: HiPerFET™; Polar™
Drain current: 112A
Pulsed drain current: 330A
Drain-source voltage: 500V
Power dissipation: 1.5kW
auf Bestellung 278 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+49.34 EUR
5+46.3 EUR
10+45.59 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXFN210N20P IXFN210N20P.pdf
IXFN210N20P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 188A; SOT227B; screw; Idm: 600A
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Kind of channel: enhancement
Polarisation: unipolar
Gate-source voltage: ±30V
Reverse recovery time: 200ns
Gate charge: 255nC
On-state resistance: 10.5mΩ
Technology: HiPerFET™; Polar™
Drain current: 188A
Pulsed drain current: 600A
Drain-source voltage: 200V
Power dissipation: 1.07kW
auf Bestellung 299 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+46.93 EUR
10+42.99 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXFN44N100P IXFN44N100P.pdf
IXFN44N100P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 37A; SOT227B; screw; Idm: 110A; 890W
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Kind of channel: enhancement
Polarisation: unipolar
Gate-source voltage: ±40V
Reverse recovery time: 300ns
Gate charge: 0.35µC
On-state resistance: 0.22Ω
Technology: HiPerFET™; Polar™
Drain current: 37A
Pulsed drain current: 110A
Drain-source voltage: 1kV
Power dissipation: 890W
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+43.59 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXFH15N100P IXFH15N100P.pdf
IXFH15N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 15A; 543W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 543W
Case: TO247-3
On-state resistance: 760mΩ
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 248 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.48 EUR
10+11.04 EUR
30+9.91 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IXFA5N100P IXFA(H,P)5N100P.pdf
IXFA5N100P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 5A; 250W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 5A
Power dissipation: 250W
Case: TO263
Mounting: SMD
Gate charge: 33.4nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTP05N100P IXTP05N100P.pdf
IXTP05N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.5A; 50W; TO220AB; 750ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.5A
Power dissipation: 50W
Case: TO220AB
On-state resistance: 30Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 750ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTP05N100 IXTA(P)05N100_HV.pdf
IXTP05N100
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO220AB; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO220AB
On-state resistance: 17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTA05N100 IXTA(P)05N100_HV.pdf
IXTA05N100
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO263
On-state resistance: 17Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTP05N100M IXTP05N100M.pdf
IXTP05N100M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.7A; 25W; TO220FP; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.7A
Power dissipation: 25W
Case: TO220FP
On-state resistance: 17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFH15N100Q3 IXF_15N100Q3.pdf
IXFH15N100Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 1kV; 15A; 690W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 690W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
auf Bestellung 195 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+19.02 EUR
5+16.03 EUR
10+15.72 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXFT15N100Q3 IXF_15N100Q3.pdf
IXFT15N100Q3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 690W
Case: TO268
On-state resistance: 1.05Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DSEC16-12A DSEC16-12A.pdf
DSEC16-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8Ax2; tube; Ifsm: 40A; TO220AB; 60W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A x2
Reverse recovery time: 40ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Case: TO220AB
Max. forward voltage: 2.94V
Max. forward impulse current: 40A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Power dissipation: 60W
Technology: HiPerFRED™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DSEC16-12AS-TUB DSEC16-12AS.pdf
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8Ax2; 40ns; D2PAK; Ufmax: 1.96V; 60W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A x2
Reverse recovery time: 40ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Case: D2PAK
Max. forward voltage: 1.96V
Max. forward impulse current: 40A
Kind of package: tube
Power dissipation: 60W
Technology: HiPerFRED™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTP4N80P IXTA(P)4N80P.pdf
IXTP4N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 8A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: THT
Gate charge: 14.2nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 560ns
Features of semiconductor devices: standard power mosfet
auf Bestellung 312 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.09 EUR
50+1.94 EUR
250+1.82 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
IXFK44N80P IXFK(X)44N80P.pdf
IXFK44N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 216 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+20.35 EUR
5+19.09 EUR
10+18.9 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXFK44N80Q3 IXFK(X)44N80Q3.pdf
IXFK44N80Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+19.26 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXFR24N80P IXFR24N80P.pdf
IXFR24N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; 208W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Power dissipation: 208W
Case: ISOPLUS247™
On-state resistance: 0.42Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.41 EUR
6+12.93 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXFK24N80P IXFH(K,T)24N80P.pdf
IXFK24N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO264
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTA4N80P IXTA(P)4N80P.pdf
IXTA4N80P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 8A
Power dissipation: 100W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: SMD
Gate charge: 14.2nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 560ns
Features of semiconductor devices: standard power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFH24N80P IXFH(K,T)24N80P.pdf
IXFH24N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFH14N80P IXFH(Q,T)14N80P_S.pdf
IXFH14N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 14A; 400W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 720mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 280 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.4 EUR
10+8.58 EUR
30+6.44 EUR
120+5.76 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXFX34N80 IXFK(X)34N80.pdf
IXFX34N80
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Power dissipation: 568W
Case: PLUS247™
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFR44N80P IXFR44N80P.pdf
IXFR44N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 26A; 360W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 26A
Power dissipation: 360W
Case: ISOPLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT14N80P IXFH(Q,T)14N80P_S.pdf
IXFT14N80P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 14A; 400W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 400W
Case: TO268
On-state resistance: 720mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFX44N80P IXFK(X)44N80P.pdf
IXFX44N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFK34N80 IXFK(X)34N80.pdf
IXFK34N80
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Power dissipation: 568W
Case: TO264
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN44N80Q3 IXFN44N80Q3.pdf
IXFN44N80Q3
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 37A; SOT227B; screw; Idm: 130A
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 37A
Pulsed drain current: 130A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.19Ω
Gate charge: 185nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFH22N65X2 IXF_22N65X2.pdf
IXFH22N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22A; 390W; TO247-3; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO247-3
On-state resistance: 0.145Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 37nC
Reverse recovery time: 145ns
auf Bestellung 189 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+7.08 EUR
12+6.32 EUR
13+5.75 EUR
30+4.78 EUR
60+4.7 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IXFP22N65X2 IXF_22N65X2.pdf
IXFP22N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22A; 390W; TO220AB; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO220AB
On-state resistance: 0.145Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 37nC
Reverse recovery time: 145ns
auf Bestellung 223 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.45 EUR
18+3.98 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IXFP22N65X2M IXFP22N65X2M.pdf
IXFP22N65X2M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 37W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 37W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 37nC
Reverse recovery time: 145ns
auf Bestellung 238 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.75 EUR
22+3.29 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
CLA100E1200KB CLA100E1200KB.pdf
CLA100E1200KB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 160A; 100A; Igt: 80mA; TO264; THT; tube
Mounting: THT
Type of thyristor: thyristor
Case: TO264
Kind of package: tube
Gate current: 80mA
Load current: 100A
Max. load current: 160A
Max. forward impulse current: 1.19kA
Max. off-state voltage: 1.2kV
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.78 EUR
8+10.15 EUR
10+8.51 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
CPC1972G CPC1972.pdf
CPC1972G
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 250mA
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Case: DIP6
Switching method: zero voltage switching
Mounting: THT
Type of relay: solid state
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.85 EUR
28+2.63 EUR
29+2.49 EUR
50+2.39 EUR
100+2.27 EUR
250+2.16 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
CPC1972GS CPC1972.pdf
CPC1972GS
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Case: DIP6
Mounting: SMT
Type of relay: solid state
Switching method: zero voltage switching
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CPC1972GSTR CPC1972.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Case: DIP6
Mounting: SMT
Type of relay: solid state
Switching method: zero voltage switching
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFH10N80P IXFA(H,P,Q)10N80P.pdf
IXFH10N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 40nC
Drain current: 10A
Power dissipation: 300W
Drain-source voltage: 800V
auf Bestellung 251 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.66 EUR
16+4.53 EUR
30+4.26 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IXFP10N80P IXFA(H,P,Q)10N80P.pdf
IXFP10N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 40nC
auf Bestellung 297 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.75 EUR
50+4.68 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IXFA10N80P IXFA(H,P,Q)10N80P.pdf
IXFA10N80P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 40nC
auf Bestellung 263 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.15 EUR
16+4.58 EUR
21+3.55 EUR
50+3.3 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 25 50 75 100 125 150 175 200 225 228 229 230 231 232 233 234 235 236 237 238 250 254  [ Nächste Seite >> ]