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IXFH24N80P

IXFH24N80P IXYS


media-3319533.pdf Hersteller: IXYS
MOSFET DIODE Id24 BVdass800
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1+18.37 EUR
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30+ 14.96 EUR
60+ 14.7 EUR
120+ 13.83 EUR
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Technische Details IXFH24N80P IXYS

Description: MOSFET N-CH 800V 24A TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 400mOhm @ 12A, 10V, Power Dissipation (Max): 650W (Tc), Vgs(th) (Max) @ Id: 5V @ 4mA, Supplier Device Package: TO-247AD (IXFH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V.

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IXFH24N80P IXFH24N80P Hersteller : Littelfuse ete_mosfets_n-channel_hiperfets_ixfh24n80p_datasheet.pdf.pdf Trans MOSFET N-CH 800V 24A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH24N80P IXFH24N80P Hersteller : Littelfuse media.pdf Trans MOSFET N-CH 800V 24A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH24N80P IXFH24N80P Hersteller : Littelfuse media.pdf Trans MOSFET N-CH 800V 24A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH24N80P IXFH24N80P Hersteller : IXYS IXFH(K,T)24N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFH24N80P IXFH24N80P Hersteller : IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_24n80p_datasheet.pdf.pdf Description: MOSFET N-CH 800V 24A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 12A, 10V
Power Dissipation (Max): 650W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
Produkt ist nicht verfügbar
IXFH24N80P IXFH24N80P Hersteller : IXYS IXFH(K,T)24N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar