IXFH24N80P IXYS
Hersteller: IXYS
Description: MOSFET N-CH 800V 24A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 12A, 10V
Power Dissipation (Max): 650W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
| Anzahl | Preis |
|---|---|
| 1+ | 19.43 EUR |
| 30+ | 11.76 EUR |
| 120+ | 10.08 EUR |
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Technische Details IXFH24N80P IXYS
Description: MOSFET N-CH 800V 24A TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 400mOhm @ 12A, 10V, Power Dissipation (Max): 650W (Tc), Vgs(th) (Max) @ Id: 5V @ 4mA, Supplier Device Package: TO-247AD (IXFH), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V.
Weitere Produktangebote IXFH24N80P nach Preis ab 13.73 EUR bis 23.58 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXFH24N80P | Hersteller : IXYS |
MOSFETs DIODE Id24 BVdass800 |
auf Bestellung 377 Stücke: Lieferzeit 10-14 Tag (e) |
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