Technische Details IXFH70N65X3 IXYS
Description: MOSFET 70A 650V X3 TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 44mOhm @ 35A, 10V, Power Dissipation (Max): 780W (Tc), Vgs(th) (Max) @ Id: 5.2V @ 4mA, Supplier Device Package: TO-247 (IXFH), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V.
Weitere Produktangebote IXFH70N65X3 nach Preis ab 12.49 EUR bis 23.55 EUR
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IXFH70N65X3 | Hersteller : IXYS |
 Description: MOSFET 70A 650V X3 TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 35A, 10V Power Dissipation (Max): 780W (Tc) Vgs(th) (Max) @ Id: 5.2V @ 4mA Supplier Device Package: TO-247 (IXFH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V |
auf Bestellung 292 Stücke: Lieferzeit 10-14 Tag (e) |
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