IXFT14N80P IXYS
Hersteller: IXYS
Description: MOSFET N-CH 800V 14A TO268
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 720mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
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Technische Details IXFT14N80P IXYS
Description: MOSFET N-CH 800V 14A TO268, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-268AA, Vgs(th) (Max) @ Id: 5.5V @ 4mA, Power Dissipation (Max): 400W (Tc), Rds On (Max) @ Id, Vgs: 720mOhm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), FET Type: N-Channel.
Weitere Produktangebote IXFT14N80P
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXFT14N80P | Hersteller : IXYS |
MOSFETs 14 Amps 800V 0.72 Rds |
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IXFT14N80P | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 14A; 400W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 14A Power dissipation: 400W Case: TO268 On-state resistance: 720mΩ Mounting: SMD Gate charge: 61nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |