Produkte > IXYS > Alle Produkte des Herstellers IXYS (15417) > Seite 231 nach 257

Wählen Sie Seite:   [  << Vorherige Seite ]  1 25 50 75 100 125 150 175 200 225 226 227 228 229 230 231 232 233 234 235 236 250 257  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
CS20-16IO1 IXYS Littelfuse-Power-Semiconductors-CS20-16io1-Datasheet?assetguid=51acf299-9569-46ae-83ea-5ba21942b78d It=31A; Vdrm=1,6kV; Igt=80mA   CS20-16IO1 IXYS TYCS20-16io1
Anzahl je Verpackung: 2 Stücke
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)
4+12.77 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MCC26-12io8B MCC26-12io8B IXYS info-mo%20mcc26-12io8b.pdf Module; double series; 1.2kV; 27A; TO240AA; Ufmax: 1.27V; Ifsm: 440A   MCC26-12IO8B IXYS MO MCC26-12IO8B
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
1+76.46 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CPC1303GR IXYS CPC1303.pdf Single-Channel CTR 200-2500% Vce 30V Uiso 5,0kV Transistor CPC1303GR , CPC1303GRTR CPC1303GR IXYS OOCPC1303gr
Anzahl je Verpackung: 10 Stücke
auf Bestellung 278 Stücke:
Lieferzeit 7-14 Tag (e)
20+3.22 EUR
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CPC1006N IXYS littelfuse-integrated-circuits-cpc1006n-datasheet?assetguid=62c4d3a3-07a8-4904-8267-d2dbcff34e41 SPST-NO; 60VDC; 50mA; SOP-4 CPC1006NTR CPC1006N IXYS SSR P CPC1006N
Anzahl je Verpackung: 10 Stücke
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)
10+3.36 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CPC1008NTR IXYS littelfuse-integrated-circuits-cpc1008n-datasheet?assetguid=55b0a818-3bfd-483f-9372-c078b9202476 SPST-NO; 50mA; SSR; 1 phase; 1,5kV; 2ms 4,09x3,81x2,03mm CPC1008N IXYS P CPC1008N IXYS
Anzahl je Verpackung: 20 Stücke
auf Bestellung 60 Stücke:
Lieferzeit 7-14 Tag (e)
20+3.11 EUR
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CPC1014NTR IXYS littelfuse-integrated-circuits-cpc1014n-datasheet?assetguid=f8c29b23-94fc-4306-8fcd-2632e2f7140d 400mA; 60V AC/DC; SPST-NO; SOP-4; 4,09 x 3,81 x 2,03mm; SSR; CPC1014N P CPC1014N
Anzahl je Verpackung: 10 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
10+3.88 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CPC1017NTR IXYS littelfuse-integrated-circuits-cpc1017n-datasheet?assetguid=b4f177f1-629f-4104-97a5-8b8d709e83de 60VDC; SPST; 50mA; MOSFET; SMD/SMT 400mW; 4 x 3,8 x 2,1mm; pakowanie: tuba 100pcs ; CPC1017NTR 2Kpcs/reel ; CPC1017N; CPC1017NTR; CPC1017N; CPC1017NTR P CPC1017N
Anzahl je Verpackung: 50 Stücke
auf Bestellung 1413 Stücke:
Lieferzeit 7-14 Tag (e)
50+2.78 EUR
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CPC1018NTR CPC1018NTR IXYS P_CPC1018N_IXYS_0001.pdf Relay SSR 50mA 1.5V DC-IN 0.6A 60V AC/DC-OUT 4-Pin SOP Tube CPC1018NTR CPC1018N P CPC1018N
Anzahl je Verpackung: 10 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.2 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXFH50N60P3 IXFH50N60P3 IXYS IXFH(T,Q)50N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 1.04kW
Case: TO247-3
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 164 Stücke:
Lieferzeit 14-21 Tag (e)
7+14.1 EUR
8+11.83 EUR
10+10.61 EUR
30+9.94 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXFQ50N60P3 IXFQ50N60P3 IXYS IXFH(T,Q)50N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 1.04kW
Case: TO3P
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 193 Stücke:
Lieferzeit 14-21 Tag (e)
6+15.16 EUR
10+12.54 EUR
30+9.75 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXFH60N60X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh60n60x3-datasheet?assetguid=a2abbdf6-f7aa-40dd-9e8d-cb6511c5bb95 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 60A; Idm: 90A; 625W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Pulsed drain current: 90A
Power dissipation: 625W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 175ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFQ60N60X IXFQ60N60X IXYS IXFH(Q)60N60X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 60A; 890W; TO3P; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 890W
Case: TO3P
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT60N60X3HV IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixft60n60x3hv-datasheet?assetguid=786b6684-b13b-4fcc-99f4-90202ff2c41e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 60A; Idm: 90A; 625W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Pulsed drain current: 90A
Power dissipation: 625W
Case: TO268HV
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 175ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXGH60N60C3D1 IXGH60N60C3D1 IXYS IXGH60N60C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 60A; 380W; TO247-3
Mounting: THT
Collector-emitter voltage: 600V
Power dissipation: 380W
Gate charge: 115nC
Technology: GenX3™; PT
Pulsed collector current: 300A
Type of transistor: IGBT
Turn-on time: 54ns
Kind of package: tube
Case: TO247-3
Turn-off time: 198ns
Gate-emitter voltage: ±20V
Collector current: 60A
auf Bestellung 258 Stücke:
Lieferzeit 14-21 Tag (e)
5+19.3 EUR
6+16.23 EUR
10+14.48 EUR
30+13.77 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXGT60N60C3D1 IXGT60N60C3D1 IXYS IXGH60N60C3D1.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 60A; 380W; TO268
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 380W
Case: TO268
Mounting: SMD
Gate charge: 115nC
Kind of package: tube
Collector current: 60A
Pulsed collector current: 300A
Collector-emitter voltage: 600V
Turn-on time: 54ns
Turn-off time: 198ns
Gate-emitter voltage: ±20V
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
10+9.09 EUR
11+8.03 EUR
12+7.21 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXKH24N60C5 IXKH24N60C5 IXYS IXKH(P)24N60C5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 250W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 250W
Case: TO247-3
On-state resistance: 0.165Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 40nC
Features of semiconductor devices: super junction coolmos
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXKP24N60C5 IXKP24N60C5 IXYS IXKH(P)24N60C5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Case: TO220AB
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 250W
Features of semiconductor devices: super junction coolmos
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXKP24N60C5M IXKP24N60C5M IXYS IXKP24N60C5M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.5A; TO220FP; 390ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.5A
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTP4N65X2 IXTP4N65X2 IXYS IXT_4N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 4A; 80W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 160ns
Power dissipation: 80W
Gate charge: 8.3nC
Technology: X2-Class
auf Bestellung 497 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.64 EUR
41+2.07 EUR
50+1.9 EUR
Mindestbestellmenge: 24 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXTA8N65X2 IXTA8N65X2 IXYS IXT_8N65X2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO263
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
26+3.33 EUR
34+2.57 EUR
Mindestbestellmenge: 26 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXYP10N65C3 IXYP10N65C3 IXYS IXYP10N65C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 10A; 160W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate charge: 18nC
Turn-on time: 44ns
Turn-off time: 128ns
Collector current: 10A
Pulsed collector current: 54A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXXH110N65C4 IXXH110N65C4 IXYS IXXH110N65C4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; TO247-3
Kind of package: tube
Technology: GenX4™; Trench; XPT™
Type of transistor: IGBT
Mounting: THT
Case: TO247-3
Turn-on time: 71ns
Gate charge: 167nC
Turn-off time: 160ns
Gate-emitter voltage: ±20V
Collector current: 110A
Pulsed collector current: 600A
Power dissipation: 880W
Collector-emitter voltage: 650V
auf Bestellung 208 Stücke:
Lieferzeit 14-21 Tag (e)
5+17.1 EUR
10+15.8 EUR
30+13.45 EUR
60+12.26 EUR
120+12.02 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXXK110N65B4H1 IXXK110N65B4H1 IXYS IXX_110N65B4H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; TO264
Type of transistor: IGBT
Power dissipation: 880W
Case: TO264
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Collector-emitter voltage: 650V
Technology: GenX4™; Trench; XPT™
Pulsed collector current: 570A
Turn-on time: 65ns
Turn-off time: 250ns
Gate-emitter voltage: ±20V
Collector current: 110A
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)
3+31.57 EUR
5+29.93 EUR
10+27.39 EUR
25+24.15 EUR
50+22.31 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXYA15N65C3D1 IXYA15N65C3D1 IXYS IXYA(P)15N65C3D1.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Case: TO263
Mounting: SMD
Kind of package: tube
Pulsed collector current: 80A
Turn-on time: 36ns
Turn-off time: 102ns
Gate-emitter voltage: ±20V
Collector current: 15A
Collector-emitter voltage: 650V
Power dissipation: 200W
Gate charge: 19nC
auf Bestellung 179 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.8 EUR
25+3.44 EUR
29+3.01 EUR
50+2.73 EUR
Mindestbestellmenge: 23 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXYP15N65C3 IXYP15N65C3 IXYS IXYP15N65C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 200W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Turn-off time: 122ns
Technology: GenX3™; Planar; XPT™
Turn-on time: 36ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYP15N65C3D1 IXYP15N65C3D1 IXYS IXYA(P)15N65C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 200W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Turn-off time: 102ns
Technology: GenX3™; Planar; XPT™
Turn-on time: 36ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYP15N65C3D1M IXYP15N65C3D1M IXYS IXYP15N65C3D1M.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 9A; 57W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 9A
Power dissipation: 57W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Turn-off time: 122ns
Technology: GenX3™; Planar; XPT™
Turn-on time: 36ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DSS16-0045A DSS16-0045A IXYS DSS16-0045A.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 16A; TO220AC; Ufmax: 0.57V
Type of diode: Schottky rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 45V
Load current: 16A
Semiconductor structure: single diode
Max. forward voltage: 0.57V
Max. forward impulse current: 280A
Kind of package: tube
Max. load current: 35A
Power dissipation: 105W
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
30+2.84 EUR
Mindestbestellmenge: 30 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DSS16-0045AS-TUB IXYS DSS16-0045A.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 16A; tube; 105W
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 16A
Semiconductor structure: single diode
Max. forward voltage: 0.57V
Max. forward impulse current: 280A
Kind of package: tube
Power dissipation: 105W
Max. load current: 35A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFA20N50P3 IXFA20N50P3 IXYS IXFA(H,P,Q)20N50P3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO263
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
5+17.02 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXFH20N50P3 IXFH20N50P3 IXYS IXFA(H,P,Q)20N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 237 Stücke:
Lieferzeit 14-21 Tag (e)
11+8.2 EUR
13+6.88 EUR
14+6.13 EUR
30+5.51 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXFP20N50P3M IXFP20N50P3M IXYS IXFP20N50P3M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; 58W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Power dissipation: 58W
Case: TO220FP
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFQ20N50P3 IXFQ20N50P3 IXYS IXFA(H,P,Q)20N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO3P
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 184 Stücke:
Lieferzeit 14-21 Tag (e)
12+7.52 EUR
13+6.56 EUR
30+5.58 EUR
60+4.99 EUR
120+4.74 EUR
Mindestbestellmenge: 12 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXTA4N65X2 IXTA4N65X2 IXYS IXT_4N65X2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 4A; 80W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 160ns
Power dissipation: 80W
Gate charge: 8.3nC
Technology: X2-Class
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
4+21.28 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXTY4N65X2 IXTY4N65X2 IXYS IXT_4N65X2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 4A; 80W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 160ns
Power dissipation: 80W
Gate charge: 8.3nC
Technology: X2-Class
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
4+21.28 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXKC40N60C IXYS description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; ISOPLUS220™; 800ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 800ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXKN40N60C IXKN40N60C IXYS IXKN40N60C.pdf Category: Transistor drivers
Description: Module; single transistor; 600V; 40A; SOT227B; screw; 290W; 250nC
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Power dissipation: 290W
Case: SOT227B
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Gate charge: 250nC
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 650ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXKR40N60C IXKR40N60C IXYS IXKR40N60C.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 38A; 280W; ISOPLUS247™; 650ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Power dissipation: 280W
Case: ISOPLUS247™
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Reverse recovery time: 650ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CPC1008N CPC1008N IXYS littelfuse-integrated-circuits-cpc1008n-datasheet?assetguid=55b0a818-3bfd-483f-9372-c078b9202476 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC
Type of relay: solid state
Max. operating current: 150mA
Switched voltage: max. 100V AC; max. 100V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Case: SOP4
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
Mounting: SMT
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 2ms
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+85.08 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CPC1008NTR CPC1008NTR IXYS CPC1008N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 100V AC; max. 100V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXFP5N100P IXFP5N100P IXYS IXFA(H,P)5N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 5A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 5A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 33.4nC
Power dissipation: 250W
auf Bestellung 54 Stücke:
Lieferzeit 14-21 Tag (e)
10+8.73 EUR
13+7.04 EUR
14+6.22 EUR
50+4.76 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CPC1017N CPC1017N IXYS cpc1017n.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
3+28.37 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXXH30N60B3 IXXH30N60B3 IXYS IXXH30N60B3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO247AD
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Turn-off time: 125ns
Gate-emitter voltage: ±20V
Collector current: 30A
Collector-emitter voltage: 600V
Pulsed collector current: 115A
Turn-on time: 23ns
auf Bestellung 224 Stücke:
Lieferzeit 14-21 Tag (e)
10+8.75 EUR
11+7.88 EUR
13+6.96 EUR
30+6.25 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CPC1035N CPC1035N IXYS cpc1035n.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Mounting: SMT
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 2ms
Switched voltage: max. 350V AC; max. 350V DC
Case: SOP4
Max. operating current: 0.1A
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 35Ω
auf Bestellung 1241 Stücke:
Lieferzeit 14-21 Tag (e)
14+6.26 EUR
17+5.07 EUR
100+4.74 EUR
Mindestbestellmenge: 14 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CPC1035NTR CPC1035NTR IXYS CPC1035N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXTK90P20P IXTK90P20P IXYS IXTK90P20P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; TO264
Case: TO264
Type of transistor: P-MOSFET
Technology: PolarP™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -90A
Reverse recovery time: 315ns
Gate charge: 205nC
On-state resistance: 44mΩ
Gate-source voltage: ±20V
Power dissipation: 890W
Kind of channel: enhancement
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
3+31.24 EUR
5+27.36 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXGX120N120A3 IXGX120N120A3 IXYS IXGK(x)120N120A3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 830W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 420nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 1365ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXGX120N120B3 IXGX120N120B3 IXYS IXGK(x)120N120B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 830W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 370A
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 885ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXGX120N60A3 IXGX120N60A3 IXYS IXGX120N60A3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 120A; 780W; PLUS247™
Pulsed collector current: 600A
Type of transistor: IGBT
Turn-on time: 123ns
Kind of package: tube
Case: PLUS247™
Turn-off time: 830ns
Gate-emitter voltage: ±20V
Collector current: 120A
Mounting: THT
Collector-emitter voltage: 600V
Power dissipation: 780W
Gate charge: 450nC
Technology: GenX3™; PT
Produkt ist nicht verfügbar
 Mindestbestellmenge: 300 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXYH24N90C3 IXYH24N90C3 IXYS IXYH24N90C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 24A; 240W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 24A
Power dissipation: 240W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 215ns
Produkt ist nicht verfügbar
 Mindestbestellmenge: 300 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXYH24N90C3D1 IXYH24N90C3D1 IXYS IXYH24N90C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 24A; 200W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 24A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 215ns
Produkt ist nicht verfügbar
 Mindestbestellmenge: 300 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXTA20N65X IXTA20N65X IXYS IXTA(H,P)20N65X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO220AB; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 35nC
Reverse recovery time: 0.35µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTA20N65X2 IXTA20N65X2 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_20n65x2_datasheet.pdf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 22A; 290W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 290W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.185Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 22A
Gate charge: 27nC
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
12+7.09 EUR
Mindestbestellmenge: 12 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXTH20N65X IXTH20N65X IXYS IXTA(H,P)20N65X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO247-3; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 320W
Case: TO247-3
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 35nC
Reverse recovery time: 0.35µs
auf Bestellung 247 Stücke:
Lieferzeit 14-21 Tag (e)
7+12.38 EUR
10+11 EUR
30+10.16 EUR
120+9.07 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXTH20N65X2 IXTH20N65X2 IXYS IXTA(H,P)20N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 290W; TO247-3; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 0.185Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 27nC
Reverse recovery time: 0.35µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTP20N65X IXTP20N65X IXYS IXTA(H,P)20N65X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO220AB; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 0.35µs
Gate charge: 35nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTP20N65X2 IXTP20N65X2 IXYS IXTA(H,P)20N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 290W; TO220AB; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 290W
Case: TO220AB
On-state resistance: 0.185Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 27nC
Reverse recovery time: 0.35µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYH50N65C3H1 IXYH50N65C3H1 IXYS IXYH50N65C3H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 142ns
Technology: GenX3™; Planar; XPT™
auf Bestellung 82 Stücke:
Lieferzeit 14-21 Tag (e)
6+14.79 EUR
10+12.22 EUR
30+10.13 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXFR15N100Q3 IXFR15N100Q3 IXYS IXFR15N100Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 400W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 400W
Case: ISOPLUS247™
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
4+27.11 EUR
10+23.42 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXFA7N80P IXFA7N80P IXYS IXFA7N80P_IXFP7N80P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO263; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate charge: 32nC
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
9+9.46 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CS20-16IO1 Littelfuse-Power-Semiconductors-CS20-16io1-Datasheet?assetguid=51acf299-9569-46ae-83ea-5ba21942b78d
Hersteller: IXYS
It=31A; Vdrm=1,6kV; Igt=80mA   CS20-16IO1 IXYS TYCS20-16io1
Anzahl je Verpackung: 2 Stücke
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)
AnzahlPrivatkunde
4+12.77 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MCC26-12io8B info-mo%20mcc26-12io8b.pdf
MCC26-12io8B
Hersteller: IXYS
Module; double series; 1.2kV; 27A; TO240AA; Ufmax: 1.27V; Ifsm: 440A   MCC26-12IO8B IXYS MO MCC26-12IO8B
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
AnzahlPrivatkunde
1+76.46 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CPC1303GR CPC1303.pdf
Hersteller: IXYS
Single-Channel CTR 200-2500% Vce 30V Uiso 5,0kV Transistor CPC1303GR , CPC1303GRTR CPC1303GR IXYS OOCPC1303gr
Anzahl je Verpackung: 10 Stücke
auf Bestellung 278 Stücke:
Lieferzeit 7-14 Tag (e)
AnzahlPrivatkunde
20+3.22 EUR
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CPC1006N littelfuse-integrated-circuits-cpc1006n-datasheet?assetguid=62c4d3a3-07a8-4904-8267-d2dbcff34e41
Hersteller: IXYS
SPST-NO; 60VDC; 50mA; SOP-4 CPC1006NTR CPC1006N IXYS SSR P CPC1006N
Anzahl je Verpackung: 10 Stücke
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)
AnzahlPrivatkunde
10+3.36 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CPC1008NTR littelfuse-integrated-circuits-cpc1008n-datasheet?assetguid=55b0a818-3bfd-483f-9372-c078b9202476
Hersteller: IXYS
SPST-NO; 50mA; SSR; 1 phase; 1,5kV; 2ms 4,09x3,81x2,03mm CPC1008N IXYS P CPC1008N IXYS
Anzahl je Verpackung: 20 Stücke
auf Bestellung 60 Stücke:
Lieferzeit 7-14 Tag (e)
AnzahlPrivatkunde
20+3.11 EUR
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CPC1014NTR littelfuse-integrated-circuits-cpc1014n-datasheet?assetguid=f8c29b23-94fc-4306-8fcd-2632e2f7140d
Hersteller: IXYS
400mA; 60V AC/DC; SPST-NO; SOP-4; 4,09 x 3,81 x 2,03mm; SSR; CPC1014N P CPC1014N
Anzahl je Verpackung: 10 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
AnzahlPrivatkunde
10+3.88 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CPC1017NTR littelfuse-integrated-circuits-cpc1017n-datasheet?assetguid=b4f177f1-629f-4104-97a5-8b8d709e83de
Hersteller: IXYS
60VDC; SPST; 50mA; MOSFET; SMD/SMT 400mW; 4 x 3,8 x 2,1mm; pakowanie: tuba 100pcs ; CPC1017NTR 2Kpcs/reel ; CPC1017N; CPC1017NTR; CPC1017N; CPC1017NTR P CPC1017N
Anzahl je Verpackung: 50 Stücke
auf Bestellung 1413 Stücke:
Lieferzeit 7-14 Tag (e)
AnzahlPrivatkunde
50+2.78 EUR
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CPC1018NTR P_CPC1018N_IXYS_0001.pdf
CPC1018NTR
Hersteller: IXYS
Relay SSR 50mA 1.5V DC-IN 0.6A 60V AC/DC-OUT 4-Pin SOP Tube CPC1018NTR CPC1018N P CPC1018N
Anzahl je Verpackung: 10 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
AnzahlPrivatkunde
10+7.2 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXFH50N60P3 IXFH(T,Q)50N60P3.pdf
IXFH50N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 1.04kW
Case: TO247-3
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 164 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
7+14.1 EUR
8+11.83 EUR
10+10.61 EUR
30+9.94 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXFQ50N60P3 IXFH(T,Q)50N60P3.pdf
IXFQ50N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 1.04kW
Case: TO3P
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 193 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
6+15.16 EUR
10+12.54 EUR
30+9.75 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXFH60N60X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh60n60x3-datasheet?assetguid=a2abbdf6-f7aa-40dd-9e8d-cb6511c5bb95
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 60A; Idm: 90A; 625W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Pulsed drain current: 90A
Power dissipation: 625W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 175ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFQ60N60X IXFH(Q)60N60X.pdf
IXFQ60N60X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 60A; 890W; TO3P; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 890W
Case: TO3P
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT60N60X3HV littelfuse-discrete-mosfets-n-channel-ultra-junction-ixft60n60x3hv-datasheet?assetguid=786b6684-b13b-4fcc-99f4-90202ff2c41e
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 60A; Idm: 90A; 625W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Pulsed drain current: 90A
Power dissipation: 625W
Case: TO268HV
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 175ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXGH60N60C3D1 IXGH60N60C3D1.pdf
IXGH60N60C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 60A; 380W; TO247-3
Mounting: THT
Collector-emitter voltage: 600V
Power dissipation: 380W
Gate charge: 115nC
Technology: GenX3™; PT
Pulsed collector current: 300A
Type of transistor: IGBT
Turn-on time: 54ns
Kind of package: tube
Case: TO247-3
Turn-off time: 198ns
Gate-emitter voltage: ±20V
Collector current: 60A
auf Bestellung 258 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
5+19.3 EUR
6+16.23 EUR
10+14.48 EUR
30+13.77 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXGT60N60C3D1 IXGH60N60C3D1.pdf
IXGT60N60C3D1
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 60A; 380W; TO268
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 380W
Case: TO268
Mounting: SMD
Gate charge: 115nC
Kind of package: tube
Collector current: 60A
Pulsed collector current: 300A
Collector-emitter voltage: 600V
Turn-on time: 54ns
Turn-off time: 198ns
Gate-emitter voltage: ±20V
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
10+9.09 EUR
11+8.03 EUR
12+7.21 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXKH24N60C5 IXKH(P)24N60C5.pdf
IXKH24N60C5
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 250W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 250W
Case: TO247-3
On-state resistance: 0.165Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 40nC
Features of semiconductor devices: super junction coolmos
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXKP24N60C5 IXKH(P)24N60C5.pdf
IXKP24N60C5
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Case: TO220AB
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 250W
Features of semiconductor devices: super junction coolmos
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXKP24N60C5M IXKP24N60C5M.pdf
IXKP24N60C5M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.5A; TO220FP; 390ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.5A
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTP4N65X2 IXT_4N65X2.pdf
IXTP4N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 4A; 80W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 160ns
Power dissipation: 80W
Gate charge: 8.3nC
Technology: X2-Class
auf Bestellung 497 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
24+3.64 EUR
41+2.07 EUR
50+1.9 EUR
Mindestbestellmenge: 24 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXTA8N65X2 IXT_8N65X2.pdf
IXTA8N65X2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO263
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
26+3.33 EUR
34+2.57 EUR
Mindestbestellmenge: 26 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXYP10N65C3 IXYP10N65C3.pdf
IXYP10N65C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 10A; 160W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate charge: 18nC
Turn-on time: 44ns
Turn-off time: 128ns
Collector current: 10A
Pulsed collector current: 54A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXXH110N65C4 IXXH110N65C4.pdf
IXXH110N65C4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; TO247-3
Kind of package: tube
Technology: GenX4™; Trench; XPT™
Type of transistor: IGBT
Mounting: THT
Case: TO247-3
Turn-on time: 71ns
Gate charge: 167nC
Turn-off time: 160ns
Gate-emitter voltage: ±20V
Collector current: 110A
Pulsed collector current: 600A
Power dissipation: 880W
Collector-emitter voltage: 650V
auf Bestellung 208 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
5+17.1 EUR
10+15.8 EUR
30+13.45 EUR
60+12.26 EUR
120+12.02 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXXK110N65B4H1 IXX_110N65B4H1.pdf
IXXK110N65B4H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; TO264
Type of transistor: IGBT
Power dissipation: 880W
Case: TO264
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Collector-emitter voltage: 650V
Technology: GenX4™; Trench; XPT™
Pulsed collector current: 570A
Turn-on time: 65ns
Turn-off time: 250ns
Gate-emitter voltage: ±20V
Collector current: 110A
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
3+31.57 EUR
5+29.93 EUR
10+27.39 EUR
25+24.15 EUR
50+22.31 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXYA15N65C3D1 IXYA(P)15N65C3D1.pdf
IXYA15N65C3D1
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Case: TO263
Mounting: SMD
Kind of package: tube
Pulsed collector current: 80A
Turn-on time: 36ns
Turn-off time: 102ns
Gate-emitter voltage: ±20V
Collector current: 15A
Collector-emitter voltage: 650V
Power dissipation: 200W
Gate charge: 19nC
auf Bestellung 179 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
23+3.8 EUR
25+3.44 EUR
29+3.01 EUR
50+2.73 EUR
Mindestbestellmenge: 23 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXYP15N65C3 IXYP15N65C3.pdf
IXYP15N65C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 200W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Turn-off time: 122ns
Technology: GenX3™; Planar; XPT™
Turn-on time: 36ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYP15N65C3D1 IXYA(P)15N65C3D1.pdf
IXYP15N65C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 200W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Turn-off time: 102ns
Technology: GenX3™; Planar; XPT™
Turn-on time: 36ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYP15N65C3D1M IXYP15N65C3D1M.pdf
IXYP15N65C3D1M
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 9A; 57W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 9A
Power dissipation: 57W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Turn-off time: 122ns
Technology: GenX3™; Planar; XPT™
Turn-on time: 36ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DSS16-0045A DSS16-0045A.pdf
DSS16-0045A
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 16A; TO220AC; Ufmax: 0.57V
Type of diode: Schottky rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 45V
Load current: 16A
Semiconductor structure: single diode
Max. forward voltage: 0.57V
Max. forward impulse current: 280A
Kind of package: tube
Max. load current: 35A
Power dissipation: 105W
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
30+2.84 EUR
Mindestbestellmenge: 30 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DSS16-0045AS-TUB DSS16-0045A.pdf
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 16A; tube; 105W
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 16A
Semiconductor structure: single diode
Max. forward voltage: 0.57V
Max. forward impulse current: 280A
Kind of package: tube
Power dissipation: 105W
Max. load current: 35A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFA20N50P3 IXFA(H,P,Q)20N50P3.pdf
IXFA20N50P3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO263
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
5+17.02 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXFH20N50P3 IXFA(H,P,Q)20N50P3.pdf
IXFH20N50P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 237 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
11+8.2 EUR
13+6.88 EUR
14+6.13 EUR
30+5.51 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXFP20N50P3M IXFP20N50P3M.pdf
IXFP20N50P3M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; 58W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Power dissipation: 58W
Case: TO220FP
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFQ20N50P3 IXFA(H,P,Q)20N50P3.pdf
IXFQ20N50P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO3P
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 184 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
12+7.52 EUR
13+6.56 EUR
30+5.58 EUR
60+4.99 EUR
120+4.74 EUR
Mindestbestellmenge: 12 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXTA4N65X2 IXT_4N65X2.pdf
IXTA4N65X2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 4A; 80W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 160ns
Power dissipation: 80W
Gate charge: 8.3nC
Technology: X2-Class
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
4+21.28 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXTY4N65X2 IXT_4N65X2.pdf
IXTY4N65X2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 4A; 80W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 160ns
Power dissipation: 80W
Gate charge: 8.3nC
Technology: X2-Class
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
4+21.28 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXKC40N60C description
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; ISOPLUS220™; 800ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 800ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXKN40N60C IXKN40N60C.pdf
IXKN40N60C
Hersteller: IXYS
Category: Transistor drivers
Description: Module; single transistor; 600V; 40A; SOT227B; screw; 290W; 250nC
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Power dissipation: 290W
Case: SOT227B
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Gate charge: 250nC
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 650ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXKR40N60C IXKR40N60C.pdf
IXKR40N60C
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 38A; 280W; ISOPLUS247™; 650ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Power dissipation: 280W
Case: ISOPLUS247™
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Reverse recovery time: 650ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CPC1008N littelfuse-integrated-circuits-cpc1008n-datasheet?assetguid=55b0a818-3bfd-483f-9372-c078b9202476
CPC1008N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC
Type of relay: solid state
Max. operating current: 150mA
Switched voltage: max. 100V AC; max. 100V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Case: SOP4
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
Mounting: SMT
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 2ms
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
1+85.08 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CPC1008NTR CPC1008N.pdf
CPC1008NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 100V AC; max. 100V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXFP5N100P IXFA(H,P)5N100P.pdf
IXFP5N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 5A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 5A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 33.4nC
Power dissipation: 250W
auf Bestellung 54 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
10+8.73 EUR
13+7.04 EUR
14+6.22 EUR
50+4.76 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CPC1017N cpc1017n.pdf
CPC1017N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
3+28.37 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXXH30N60B3 IXXH30N60B3-DTE.pdf
IXXH30N60B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO247AD
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Turn-off time: 125ns
Gate-emitter voltage: ±20V
Collector current: 30A
Collector-emitter voltage: 600V
Pulsed collector current: 115A
Turn-on time: 23ns
auf Bestellung 224 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
10+8.75 EUR
11+7.88 EUR
13+6.96 EUR
30+6.25 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CPC1035N cpc1035n.pdf
CPC1035N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Mounting: SMT
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 2ms
Switched voltage: max. 350V AC; max. 350V DC
Case: SOP4
Max. operating current: 0.1A
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 35Ω
auf Bestellung 1241 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
14+6.26 EUR
17+5.07 EUR
100+4.74 EUR
Mindestbestellmenge: 14 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CPC1035NTR CPC1035N.pdf
CPC1035NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXTK90P20P IXTK90P20P.pdf
IXTK90P20P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; TO264
Case: TO264
Type of transistor: P-MOSFET
Technology: PolarP™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -90A
Reverse recovery time: 315ns
Gate charge: 205nC
On-state resistance: 44mΩ
Gate-source voltage: ±20V
Power dissipation: 890W
Kind of channel: enhancement
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
3+31.24 EUR
5+27.36 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXGX120N120A3 IXGK(x)120N120A3.pdf
IXGX120N120A3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 830W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 420nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 1365ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXGX120N120B3 IXGK(x)120N120B3.pdf
IXGX120N120B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 830W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 370A
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 885ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXGX120N60A3 IXGX120N60A3.pdf
IXGX120N60A3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 120A; 780W; PLUS247™
Pulsed collector current: 600A
Type of transistor: IGBT
Turn-on time: 123ns
Kind of package: tube
Case: PLUS247™
Turn-off time: 830ns
Gate-emitter voltage: ±20V
Collector current: 120A
Mounting: THT
Collector-emitter voltage: 600V
Power dissipation: 780W
Gate charge: 450nC
Technology: GenX3™; PT
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXYH24N90C3 IXYH24N90C3.pdf
IXYH24N90C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 24A; 240W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 24A
Power dissipation: 240W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 215ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXYH24N90C3D1 IXYH24N90C3D1.pdf
IXYH24N90C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 24A; 200W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 24A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 215ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXTA20N65X IXTA(H,P)20N65X.pdf
IXTA20N65X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO220AB; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 35nC
Reverse recovery time: 0.35µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTA20N65X2 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_20n65x2_datasheet.pdf.pdf
IXTA20N65X2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 22A; 290W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 290W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.185Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 22A
Gate charge: 27nC
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
12+7.09 EUR
Mindestbestellmenge: 12 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXTH20N65X IXTA(H,P)20N65X.pdf
IXTH20N65X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO247-3; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 320W
Case: TO247-3
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 35nC
Reverse recovery time: 0.35µs
auf Bestellung 247 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
7+12.38 EUR
10+11 EUR
30+10.16 EUR
120+9.07 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXTH20N65X2 IXTA(H,P)20N65X2.pdf
IXTH20N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 290W; TO247-3; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 0.185Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 27nC
Reverse recovery time: 0.35µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTP20N65X IXTA(H,P)20N65X.pdf
IXTP20N65X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO220AB; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 0.35µs
Gate charge: 35nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTP20N65X2 IXTA(H,P)20N65X2.pdf
IXTP20N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 290W; TO220AB; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 290W
Case: TO220AB
On-state resistance: 0.185Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 27nC
Reverse recovery time: 0.35µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYH50N65C3H1 IXYH50N65C3H1.pdf
IXYH50N65C3H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 142ns
Technology: GenX3™; Planar; XPT™
auf Bestellung 82 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
6+14.79 EUR
10+12.22 EUR
30+10.13 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXFR15N100Q3 IXFR15N100Q3.pdf
IXFR15N100Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 400W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 400W
Case: ISOPLUS247™
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
4+27.11 EUR
10+23.42 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXFA7N80P IXFA7N80P_IXFP7N80P.pdf
IXFA7N80P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO263; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate charge: 32nC
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
9+9.46 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 25 50 75 100 125 150 175 200 225 226 227 228 229 230 231 232 233 234 235 236 250 257  [ Nächste Seite >> ]