IXFP34N65X2
Produktcode: 180236
zu Favoriten hinzufügen
Lieblingsprodukt
Hersteller:
Verschiedene Bauteile > Verschiedene Bauteile 1
Produktrezensionen
Produktbewertung abgeben
Weitere Produktangebote IXFP34N65X2 nach Preis ab 6.64 EUR bis 17.89 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IXFP34N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO220AB; 164ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Case: TO220AB On-state resistance: 0.1Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Reverse recovery time: 164ns Power dissipation: 540W Gate charge: 56nC Features of semiconductor devices: ultra junction x-class |
auf Bestellung 156 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
 |
IXFP34N65X2 | IXYS |
MOSFETs 650V/34A Ultra Junction X2-Class |
auf Bestellung 314 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
 |
IXFP34N65X2 | IXYS |
Description: MOSFET N-CH 650V 34A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 17A, 10V Power Dissipation (Max): 540W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 25 V |
auf Bestellung 5116 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IXFP34N65X2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO220AB; 164ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Case: TO220AB
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 164ns
Power dissipation: 540W
Gate charge: 56nC
Features of semiconductor devices: ultra junction x-class
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO220AB; 164ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Case: TO220AB
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 164ns
Power dissipation: 540W
Gate charge: 56nC
Features of semiconductor devices: ultra junction x-class
auf Bestellung 156 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 9.97 EUR |
| 10+ | 8.58 EUR |
| 25+ | 7.29 EUR |
| 50+ | 6.64 EUR |
| IXFP34N65X2 |
|
Hersteller: IXYS
MOSFETs 650V/34A Ultra Junction X2-Class
MOSFETs 650V/34A Ultra Junction X2-Class
auf Bestellung 314 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 17.55 EUR |
| 10+ | 8.98 EUR |
| 100+ | 8.85 EUR |
| IXFP34N65X2 |
|
Hersteller: IXYS
Description: MOSFET N-CH 650V 34A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 17A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 25 V
Description: MOSFET N-CH 650V 34A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 17A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 25 V
auf Bestellung 5116 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 17.89 EUR |
| 50+ | 9.83 EUR |
| 100+ | 9.06 EUR |
| 500+ | 7.7 EUR |
| 1000+ | 7.46 EUR |