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IXTP60N10T

IXTP60N10T IXYS


IXTA(P)60N10T.pdf
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO220AB; 59ns
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Gate charge: 49nC
Reverse recovery time: 59ns
On-state resistance: 18mΩ
Power dissipation: 176W
Case: TO220AB
Kind of channel: enhancement
Mounting: THT
auf Bestellung 247 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.2 EUR
25+2.92 EUR
29+2.47 EUR
50+1.94 EUR
100+1.63 EUR
Mindestbestellmenge: 23
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Technische Details IXTP60N10T IXYS

Description: MOSFET N-CH 100V 60A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V, Power Dissipation (Max): 176W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V.

Weitere Produktangebote IXTP60N10T nach Preis ab 2.01 EUR bis 5.46 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IXTP60N10T IXTP60N10T Hersteller : IXYS littelfuse-discrete-mosfets-ixt-60n10t-datasheet?assetguid=9c28d11f-bd7e-4749-b9d5-f5d766cb0615 Description: MOSFET N-CH 100V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
auf Bestellung 35 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.33 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXTP60N10T IXTP60N10T Hersteller : IXYS Littelfuse_Discrete_MOSFETs_N_Channel_Trench_Gate_IXT_60N10T_Datasheet.PDF MOSFETs MOSFET Id60 BVdass100
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.46 EUR
10+2.96 EUR
100+2.22 EUR
500+2.01 EUR
Im Einkaufswagen  Stück im Wert von  UAH