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IXFH24N90P IXFH24N90P IXYS IXF_24N90P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 24A; 660W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 24A
Case: TO247-3
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 660W
Gate charge: 130nC
auf Bestellung 226 Stücke:
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6+15.62 EUR
30+15.04 EUR
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IXFR24N90P IXFR24N90P IXYS IXFR24N90P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 13A; 230W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 13A
Case: ISOPLUS247™
On-state resistance: 0.46Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 230W
Gate charge: 130nC
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DSI30-16A DSI30-16A IXYS DSI30-16A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 30A; tube; Ifsm: 255A; TO220AC; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 30A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.25V
Max. forward impulse current: 255A
Power dissipation: 160W
Kind of package: tube
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23+3.72 EUR
29+3 EUR
50+2.11 EUR
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DSI30-16AS DSI30-16AS IXYS DSI30-16AS.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.6kV
Load current: 30A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.25V
Max. forward impulse current: 255A
Power dissipation: 160W
Kind of package: reel; tape
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DSI30-16AS-TUB DSI30-16AS-TUB IXYS DSI30-16AS.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.6kV
Load current: 30A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.25V
Max. forward impulse current: 255A
Power dissipation: 160W
Kind of package: tube
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DPG30C400PB DPG30C400PB IXYS media?resourcetype=datasheets&itemid=EFDD0730-3DB0-4D77-9198-01A406BAA107&filename=Littelfuse-Power-Semiconductors-DPG30C400PB-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15Ax2; tube; Ifsm: 190A; TO220AB; 90W
Mounting: THT
Case: TO220AB
Kind of package: tube
Technology: HiPerFRED™ 2nd Gen
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Type of diode: rectifying
Reverse recovery time: 45ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 1.39V
Max. forward impulse current: 190A
Load current: 15A x2
Power dissipation: 90W
Max. off-state voltage: 0.4kV
auf Bestellung 83 Stücke:
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22+4.05 EUR
24+3.59 EUR
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MD16110A-DKM2MM IXYS littelfuse_power_semiconductor_rectifier_module_circuit_package_a_datasheet.pdf?assetguid=7ed5c66f-3580-4b5e-91ee-69f455430ce8 Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 110A; package A
Kind of package: bulk
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
Mechanical mounting: screw
Case: package A
Electrical mounting: screw
Max. forward voltage: 1.6V
Load current: 110A
Max. load current: 170A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 2.5kA
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DSA60C45HB DSA60C45HB IXYS DSA60C45HB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO247-3; Ufmax: 0.66V
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 0.55kA
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 160W
Load current: 30A x2
Max. forward voltage: 0.66V
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19+4.64 EUR
21+4.11 EUR
30+3.76 EUR
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DSA60C60PB DSA60C60PB IXYS DSA60C60PB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.77V
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 0.45kA
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 175W
Heatsink thickness: 1.14...1.39mm
Load current: 30A x2
Max. forward voltage: 0.77V
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DSA60C150PB DSA60C150PB IXYS DSA60C150PB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 30Ax2; TO220AB; Ufmax: 0.8V
Type of diode: Schottky rectifying
Max. off-state voltage: 150V
Max. forward impulse current: 390A
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 175W
Heatsink thickness: 1.14...1.39mm
Load current: 30A x2
Max. forward voltage: 0.8V
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DSA60C100PB DSA60C100PB IXYS DSA60C100PB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO220AB; Ufmax: 0.78V
Type of diode: Schottky rectifying
Max. off-state voltage: 0.1kV
Max. forward impulse current: 0.44kA
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 175W
Heatsink thickness: 1.14...1.39mm
Load current: 30A x2
Max. forward voltage: 0.78V
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DSA60C45PB DSA60C45PB IXYS DSA60C45PB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220AB; Ufmax: 0.67V
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 490A
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 175W
Heatsink thickness: 1.14...1.39mm
Load current: 30A x2
Max. forward voltage: 0.67V
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DSA60C60HB DSA60C60HB IXYS DSA60C60HB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO247-3; Ufmax: 0.75V
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 0.55kA
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 160W
Load current: 30A x2
Max. forward voltage: 0.75V
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DSA30C45PC DSA30C45PC IXYS DSA30C45PC.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 15Ax2; reel,tape; 85W
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.63V
Max. forward impulse current: 340A
Kind of package: reel; tape
Power dissipation: 85W
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114+0.75 EUR
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IXGX82N120A3 IXGX82N120A3 IXYS IXGK(x)82N120A3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 580A
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-on time: 109ns
Turn-off time: 1.59µs
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IXGX82N120B3 IXGX82N120B3 IXYS IXGK(X)82N120B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 500A
Mounting: THT
Gate charge: 0.35µC
Kind of package: tube
Turn-on time: 112ns
Turn-off time: 760ns
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LOC111S LOC111S IXYS LOC111.pdf Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; 1A
Kind of output: transistor
Mounting: SMD
Type of optocoupler: optocoupler
Number of channels: 1
Trigger current: 1A
Insulation voltage: 3.75kV
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5+17.02 EUR
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LCB111STR IXYS LCB111.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Case: DIP6
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NC
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 35Ω
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
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LOC111STR LOC111STR IXYS LOC111.pdf Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; 1A
Kind of output: transistor
Mounting: SMD
Type of optocoupler: optocoupler
Number of channels: 1
Trigger current: 1A
Insulation voltage: 3.75kV
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CLA5E1200PZ-TUB CLA5E1200PZ-TUB IXYS CLA5E1200PZ.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 7.8A; 5A; Igt: 30/50mA; TO263ABHV; SMD; tube
Case: TO263ABHV
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Max. forward impulse current: 60A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 30/50mA
Max. load current: 7.8A
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21+4.24 EUR
23+3.84 EUR
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CLF20E1200PB CLF20E1200PB IXYS CLF20E1200PB.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 55mA; TO220AB; THT; tube
Case: TO220AB
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Max. forward impulse current: 175A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 55mA
Max. load current: 31A
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16+5.33 EUR
22+4.01 EUR
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DHG10I1200PA DHG10I1200PA IXYS DHG10I1200PA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 10A; tube; Ifsm: 60A; TO220AC; 85W
Type of diode: rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 2.23V
Max. forward impulse current: 60A
Kind of package: tube
Reverse recovery time: 200ns
Heatsink thickness: 1.14...1.39mm
Power dissipation: 85W
Features of semiconductor devices: fast switching
Technology: Sonic FRD™
auf Bestellung 155 Stücke:
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28+3.12 EUR
33+2.65 EUR
35+2.46 EUR
38+2.25 EUR
50+2.11 EUR
100+2.01 EUR
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DHG20I1200PA DHG20I1200PA IXYS DHG20I1200PA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 20A; tube; Ifsm: 150A; TO220AC; 140W
Type of diode: rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 2.25V
Max. forward impulse current: 150A
Kind of package: tube
Reverse recovery time: 200ns
Heatsink thickness: 1.14...1.39mm
Power dissipation: 140W
Features of semiconductor devices: fast switching
Technology: Sonic FRD™
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14+6.09 EUR
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DHG10I1200PM DHG10I1200PM IXYS DHG10I1200PM.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 10A; tube; Ifsm: 65A; TO220FP-2; 30W
Type of diode: rectifying
Case: TO220FP-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 2.13V
Max. forward impulse current: 65A
Kind of package: tube
Reverse recovery time: 75ns
Power dissipation: 30W
Features of semiconductor devices: fast switching
Technology: Sonic FRD™
auf Bestellung 88 Stücke:
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23+3.81 EUR
27+3.25 EUR
29+2.94 EUR
33+2.58 EUR
50+2.37 EUR
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CLA5E1200PZ-TRL CLA5E1200PZ-TRL IXYS media?resourcetype=datasheets&itemid=32eb8ba1-5fc9-40b1-9853-f8e52c0de878&filename=Littelfuse-Power-Semiconductors-CLA5E1200PZ-Datasheet Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 7.8A; 5A; Igt: 30mA; D2PAK; SMD; reel,tape
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Kind of package: reel; tape
Type of thyristor: thyristor
Gate current: 30mA
Max. load current: 7.8A
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CLA30E1200PC-TUB CLA30E1200PC-TUB IXYS Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30mA; TO263; SMD; tube
Case: TO263
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 30mA
Max. load current: 47A
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CLA20EF1200PB CLA20EF1200PB IXYS CLA20EF1200PB.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 35A; 20A; Igt: 35mA; TO220AB; THT; tube
Case: TO220AB
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Max. forward impulse current: 130A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 35mA
Max. load current: 35A
Features of semiconductor devices: reverse conducting thyristor (RCT)
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CLA20EF1200PZ-TRL CLA20EF1200PZ-TRL IXYS Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCLA20EF1200PZ.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 35A; 20A; Igt: 20mA; D2PAK; SMD; reel,tape
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 20A
Kind of package: reel; tape
Type of thyristor: thyristor
Gate current: 20mA
Max. load current: 35A
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CLA20EF1200PZ-TUB CLA20EF1200PZ-TUB IXYS Littelfuse-Power-Semiconductors-CLA20EF1200PZ-Datasheet?assetguid=b4d6e4f0-e5db-4d08-b024-c6def3ffd29e Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 35A; 20A; Igt: 20mA; D2PAK; SMD; tube
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 20A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 20mA
Max. load current: 35A
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CLA30E1200PC-TRL CLA30E1200PC-TRL IXYS Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; D2PAK; SMD
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 255A
Kind of package: reel; tape
Type of thyristor: thyristor
Gate current: 30/50mA
Max. load current: 47A
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CLB40I1200PZ-TRL CLB40I1200PZ-TRL IXYS Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 63A; 40A; Igt: 30mA; D2PAK; SMD; reel,tape
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 40A
Kind of package: reel; tape
Type of thyristor: thyristor
Gate current: 30mA
Max. load current: 63A
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CLB40I1200PZ-TUB IXYS CLB40I1200PZ.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 63A; 40A; Igt: 30/50mA; TO263ABHV; SMD; tube
Case: TO263ABHV
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 40A
Max. forward impulse current: 0.44kA
Kind of package: tube
Type of thyristor: thyristor
Gate current: 30/50mA
Max. load current: 63A
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CLE20E1200PC-TRL CLE20E1200PC-TRL IXYS Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 35A; 20A; Igt: 40mA; TO263; SMD; reel,tape
Case: TO263
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 20A
Kind of package: reel; tape
Type of thyristor: thyristor
Gate current: 40mA
Max. load current: 35A
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CLE20E1200PC-TUB CLE20E1200PC-TUB IXYS Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 35A; 20A; Igt: 40mA; TO263; SMD; tube
Case: TO263
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 20A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 40mA
Max. load current: 35A
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CLE30E1200PB CLE30E1200PB IXYS CLE30E1200PB.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 35A; 30A; Igt: 50mA; TO220AB; THT; tube
Case: TO220AB
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 380A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50mA
Max. load current: 35A
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DHG20C1200PB DHG20C1200PB IXYS DHG20C1200PB.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 10Ax2; tube; Ifsm: 60A; TO220AB; 85W
Type of diode: rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 2.23V
Max. forward impulse current: 60A
Kind of package: tube
Reverse recovery time: 200ns
Heatsink thickness: 1.14...1.39mm
Power dissipation: 85W
Features of semiconductor devices: fast switching
Technology: Sonic FRD™
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DPU30I1200PA DPU30I1200PA IXYS Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 250A; TO220-2; 123ns
Type of diode: rectifying
Case: TO220-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 250A
Kind of package: tube
Reverse recovery time: 123ns
Technology: FRED
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IXA20I1200PB IXA20I1200PB IXYS IXA20I1200PB.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 22A; 165W; TO220-3
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate charge: 47nC
Turn-on time: 110ns
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 22A
Power dissipation: 165W
Pulsed collector current: 45A
Collector-emitter voltage: 1.2kV
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Type of transistor: IGBT
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MIXA80W1200PTEH IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: E3-Pack
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 84A
Technology: XPT™
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
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MIXG120W1200PTEH IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: E3-Pack
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 140A
Technology: X2PT
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Produkt ist nicht verfügbar
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DSEE30-12A DSEE30-12A IXYS DSEE30-12A.PDF Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-3; 165W
Mounting: THT
Technology: HiPerFRED™
Type of diode: rectifying
Case: TO247-3
Reverse recovery time: 30ns
Max. forward voltage: 2.5V
Load current: 30A
Power dissipation: 165W
Max. forward impulse current: 200A
Kind of package: tube
Max. off-state voltage: 1.2kV
Semiconductor structure: double series
Features of semiconductor devices: fast switching
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2+42.54 EUR
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MEE300-06DA IXYS PCN241015_Y4-M6 screw.pdf MEx300-06DA.pdf Category: Diode modules
Description: Module: diode; double series; 600V; If: 304A; Y4-M6; Ufmax: 1.19V
Electrical mounting: screw
Mechanical mounting: screw
Case: Y4-M6
Max. forward voltage: 1.19V
Load current: 304A
Max. forward impulse current: 2.4kA
Kind of package: bulk
Max. off-state voltage: 0.6kV
Semiconductor structure: double series
Type of semiconductor module: diode
Produkt ist nicht verfügbar
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IXXH80N65B4D1 IXXH80N65B4D1 IXYS IXXH80N65B4D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 625W
Case: TO247-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 125ns
Turn-off time: 222ns
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 430A
Produkt ist nicht verfügbar
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IXXH80N65B4H1 IXXH80N65B4H1 IXYS IXXH80N65B4H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 625W
Case: TO247-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 123ns
Turn-off time: 147ns
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 430A
Produkt ist nicht verfügbar
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MCC56-12io1B MCC56-12io1B IXYS MCC56-12IO1B.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Max. forward impulse current: 1.62kA
Produkt ist nicht verfügbar
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MCC56-12io8B MCC56-12io8B IXYS MCC56-12IO8B.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 60A; TO240AA; Ufmax: 1.57V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.57V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Max. forward impulse current: 1.5kA
Produkt ist nicht verfügbar
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MCC56-18io1B IXYS L075.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 60A; TO240AA; Ufmax: 1.57V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.57V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Max. forward impulse current: 1.6kA
Produkt ist nicht verfügbar
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MCC56-08io1B IXYS PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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MCC56-08io8B IXYS PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MCC56-14IO1 IXYS Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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MCC56-14io8B IXYS PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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MCC56-18io8B IXYS PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXYK180N65A5 IXYS Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYK180N65A5Datasheet.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 180A; 1.15kW; TO264
Type of transistor: IGBT
Power dissipation: 1.15kW
Case: TO264
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Turn-off time: 0.5µs
Gate-emitter voltage: ±20V
Collector current: 180A
Pulsed collector current: 1kA
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IXYN180N65A5 IXYS Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYN180N65A5Datasheet.pdf Category: IGBT modules
Description: Module: IGBT; Ic: 180A; SOT227B; tube; screw
Case: SOT227B
Kind of package: tube
Collector-emitter voltage: 650V
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 180A
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IXYX180N65A5 IXYS Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYX180N65A5Datasheet.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 220A; 1.15kW; TO247-3
Type of transistor: IGBT
Power dissipation: 1.15kW
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Turn-off time: 0.5µs
Gate-emitter voltage: ±20V
Collector current: 220A
Pulsed collector current: 1kA
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DFE240X600NA DFE240X600NA IXYS DFE240X600NA.pdf Category: Diode modules
Description: Module: diode; double independent; 600V; If: 120Ax2; SOT227B; screw
Max. load current: 240A
Max. off-state voltage: 0.6kV
Type of semiconductor module: diode
Max. forward impulse current: 1.2kA
Semiconductor structure: double independent
Technology: FRED
Mechanical mounting: screw
Electrical mounting: screw
Case: SOT227B
Kind of package: tube
Reverse recovery time: 35ns
Max. forward voltage: 1.2V
Load current: 120A x2
Produkt ist nicht verfügbar
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IXBH24N170 IXBH24N170 IXYS IXBH(t)24N170.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Gate charge: 0.14µC
Turn-on time: 190ns
Turn-off time: 1285ns
Collector current: 24A
Pulsed collector current: 230A
Gate-emitter voltage: ±20V
Power dissipation: 250W
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
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1+85.08 EUR
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IXBH22N300HV IXYS Category: THT IGBT transistors
Description: Transistor: IGBT; 3kV; 60A; 290W; TO247HV
Mounting: THT
Type of transistor: IGBT
Case: TO247HV
Kind of package: tube
Collector current: 60A
Power dissipation: 290W
Collector-emitter voltage: 3kV
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IXBH2N250 IXBH2N250 IXYS IXBH(T)2N250.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 2A; 32W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Gate charge: 10.6nC
Turn-on time: 310ns
Turn-off time: 252ns
Collector current: 2A
Pulsed collector current: 13A
Gate-emitter voltage: ±20V
Power dissipation: 32W
Collector-emitter voltage: 2.5kV
Technology: BiMOSFET™
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IXTH120P065T IXTH120P065T IXYS IXT_120P065T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 53ns
Technology: TrenchP™
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7+12.42 EUR
11+8.5 EUR
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60+7.64 EUR
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IXFH24N90P IXF_24N90P.pdf
IXFH24N90P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 24A; 660W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 24A
Case: TO247-3
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 660W
Gate charge: 130nC
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6+15.62 EUR
30+15.04 EUR
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IXFR24N90P IXFR24N90P.pdf
IXFR24N90P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 13A; 230W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 13A
Case: ISOPLUS247™
On-state resistance: 0.46Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 230W
Gate charge: 130nC
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DSI30-16A DSI30-16A.pdf
DSI30-16A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 30A; tube; Ifsm: 255A; TO220AC; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 30A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.25V
Max. forward impulse current: 255A
Power dissipation: 160W
Kind of package: tube
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23+3.72 EUR
29+3 EUR
50+2.11 EUR
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DSI30-16AS DSI30-16AS.pdf
DSI30-16AS
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.6kV
Load current: 30A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.25V
Max. forward impulse current: 255A
Power dissipation: 160W
Kind of package: reel; tape
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DSI30-16AS-TUB DSI30-16AS.pdf
DSI30-16AS-TUB
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.6kV
Load current: 30A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.25V
Max. forward impulse current: 255A
Power dissipation: 160W
Kind of package: tube
Produkt ist nicht verfügbar
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DPG30C400PB media?resourcetype=datasheets&itemid=EFDD0730-3DB0-4D77-9198-01A406BAA107&filename=Littelfuse-Power-Semiconductors-DPG30C400PB-Datasheet
DPG30C400PB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15Ax2; tube; Ifsm: 190A; TO220AB; 90W
Mounting: THT
Case: TO220AB
Kind of package: tube
Technology: HiPerFRED™ 2nd Gen
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Type of diode: rectifying
Reverse recovery time: 45ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 1.39V
Max. forward impulse current: 190A
Load current: 15A x2
Power dissipation: 90W
Max. off-state voltage: 0.4kV
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22+4.05 EUR
24+3.59 EUR
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MD16110A-DKM2MM littelfuse_power_semiconductor_rectifier_module_circuit_package_a_datasheet.pdf?assetguid=7ed5c66f-3580-4b5e-91ee-69f455430ce8
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 110A; package A
Kind of package: bulk
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
Mechanical mounting: screw
Case: package A
Electrical mounting: screw
Max. forward voltage: 1.6V
Load current: 110A
Max. load current: 170A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 2.5kA
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DSA60C45HB DSA60C45HB.pdf
DSA60C45HB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO247-3; Ufmax: 0.66V
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 0.55kA
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 160W
Load current: 30A x2
Max. forward voltage: 0.66V
auf Bestellung 296 Stücke:
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17+5.15 EUR
19+4.64 EUR
21+4.11 EUR
30+3.76 EUR
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DSA60C60PB DSA60C60PB.pdf
DSA60C60PB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.77V
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 0.45kA
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 175W
Heatsink thickness: 1.14...1.39mm
Load current: 30A x2
Max. forward voltage: 0.77V
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DSA60C150PB DSA60C150PB.pdf
DSA60C150PB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 30Ax2; TO220AB; Ufmax: 0.8V
Type of diode: Schottky rectifying
Max. off-state voltage: 150V
Max. forward impulse current: 390A
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 175W
Heatsink thickness: 1.14...1.39mm
Load current: 30A x2
Max. forward voltage: 0.8V
Produkt ist nicht verfügbar
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DSA60C100PB DSA60C100PB.pdf
DSA60C100PB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO220AB; Ufmax: 0.78V
Type of diode: Schottky rectifying
Max. off-state voltage: 0.1kV
Max. forward impulse current: 0.44kA
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 175W
Heatsink thickness: 1.14...1.39mm
Load current: 30A x2
Max. forward voltage: 0.78V
Produkt ist nicht verfügbar
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DSA60C45PB DSA60C45PB.pdf
DSA60C45PB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220AB; Ufmax: 0.67V
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 490A
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 175W
Heatsink thickness: 1.14...1.39mm
Load current: 30A x2
Max. forward voltage: 0.67V
Produkt ist nicht verfügbar
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DSA60C60HB DSA60C60HB.pdf
DSA60C60HB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO247-3; Ufmax: 0.75V
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 0.55kA
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 160W
Load current: 30A x2
Max. forward voltage: 0.75V
Produkt ist nicht verfügbar
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DSA30C45PC DSA30C45PC.pdf
DSA30C45PC
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 15Ax2; reel,tape; 85W
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.63V
Max. forward impulse current: 340A
Kind of package: reel; tape
Power dissipation: 85W
auf Bestellung 687 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
114+0.75 EUR
Mindestbestellmenge: 114 Stücke
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IXGX82N120A3 IXGK(x)82N120A3.pdf
IXGX82N120A3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 580A
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-on time: 109ns
Turn-off time: 1.59µs
Produkt ist nicht verfügbar
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IXGX82N120B3 IXGK(X)82N120B3.pdf
IXGX82N120B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 500A
Mounting: THT
Gate charge: 0.35µC
Kind of package: tube
Turn-on time: 112ns
Turn-off time: 760ns
Produkt ist nicht verfügbar
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LOC111S LOC111.pdf
LOC111S
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; 1A
Kind of output: transistor
Mounting: SMD
Type of optocoupler: optocoupler
Number of channels: 1
Trigger current: 1A
Insulation voltage: 3.75kV
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
5+17.02 EUR
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LCB111STR LCB111.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Case: DIP6
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NC
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 35Ω
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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LOC111STR LOC111.pdf
LOC111STR
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; 1A
Kind of output: transistor
Mounting: SMD
Type of optocoupler: optocoupler
Number of channels: 1
Trigger current: 1A
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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CLA5E1200PZ-TUB CLA5E1200PZ.pdf
CLA5E1200PZ-TUB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 7.8A; 5A; Igt: 30/50mA; TO263ABHV; SMD; tube
Case: TO263ABHV
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Max. forward impulse current: 60A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 30/50mA
Max. load current: 7.8A
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
21+4.24 EUR
23+3.84 EUR
26+3.33 EUR
Mindestbestellmenge: 21 Stücke
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CLF20E1200PB CLF20E1200PB.pdf
CLF20E1200PB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 55mA; TO220AB; THT; tube
Case: TO220AB
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Max. forward impulse current: 175A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 55mA
Max. load current: 31A
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
16+5.33 EUR
22+4.01 EUR
Mindestbestellmenge: 16 Stücke
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DHG10I1200PA DHG10I1200PA.pdf
DHG10I1200PA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 10A; tube; Ifsm: 60A; TO220AC; 85W
Type of diode: rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 2.23V
Max. forward impulse current: 60A
Kind of package: tube
Reverse recovery time: 200ns
Heatsink thickness: 1.14...1.39mm
Power dissipation: 85W
Features of semiconductor devices: fast switching
Technology: Sonic FRD™
auf Bestellung 155 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
28+3.12 EUR
33+2.65 EUR
35+2.46 EUR
38+2.25 EUR
50+2.11 EUR
100+2.01 EUR
Mindestbestellmenge: 28 Stücke
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DHG20I1200PA DHG20I1200PA.pdf
DHG20I1200PA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 20A; tube; Ifsm: 150A; TO220AC; 140W
Type of diode: rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 2.25V
Max. forward impulse current: 150A
Kind of package: tube
Reverse recovery time: 200ns
Heatsink thickness: 1.14...1.39mm
Power dissipation: 140W
Features of semiconductor devices: fast switching
Technology: Sonic FRD™
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
14+6.09 EUR
15+5.66 EUR
Mindestbestellmenge: 14 Stücke
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DHG10I1200PM DHG10I1200PM.pdf
DHG10I1200PM
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 10A; tube; Ifsm: 65A; TO220FP-2; 30W
Type of diode: rectifying
Case: TO220FP-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 2.13V
Max. forward impulse current: 65A
Kind of package: tube
Reverse recovery time: 75ns
Power dissipation: 30W
Features of semiconductor devices: fast switching
Technology: Sonic FRD™
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
23+3.81 EUR
27+3.25 EUR
29+2.94 EUR
33+2.58 EUR
50+2.37 EUR
Mindestbestellmenge: 23 Stücke
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CLA5E1200PZ-TRL media?resourcetype=datasheets&itemid=32eb8ba1-5fc9-40b1-9853-f8e52c0de878&filename=Littelfuse-Power-Semiconductors-CLA5E1200PZ-Datasheet
CLA5E1200PZ-TRL
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 7.8A; 5A; Igt: 30mA; D2PAK; SMD; reel,tape
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Kind of package: reel; tape
Type of thyristor: thyristor
Gate current: 30mA
Max. load current: 7.8A
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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CLA30E1200PC-TUB
CLA30E1200PC-TUB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30mA; TO263; SMD; tube
Case: TO263
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 30mA
Max. load current: 47A
Produkt ist nicht verfügbar
Mindestbestellmenge: 1400 Stücke
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CLA20EF1200PB CLA20EF1200PB.pdf
CLA20EF1200PB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 35A; 20A; Igt: 35mA; TO220AB; THT; tube
Case: TO220AB
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Max. forward impulse current: 130A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 35mA
Max. load current: 35A
Features of semiconductor devices: reverse conducting thyristor (RCT)
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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CLA20EF1200PZ-TRL Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCLA20EF1200PZ.pdf
CLA20EF1200PZ-TRL
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 35A; 20A; Igt: 20mA; D2PAK; SMD; reel,tape
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 20A
Kind of package: reel; tape
Type of thyristor: thyristor
Gate current: 20mA
Max. load current: 35A
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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CLA20EF1200PZ-TUB Littelfuse-Power-Semiconductors-CLA20EF1200PZ-Datasheet?assetguid=b4d6e4f0-e5db-4d08-b024-c6def3ffd29e
CLA20EF1200PZ-TUB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 35A; 20A; Igt: 20mA; D2PAK; SMD; tube
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 20A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 20mA
Max. load current: 35A
Produkt ist nicht verfügbar
Mindestbestellmenge: 1400 Stücke
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CLA30E1200PC-TRL
CLA30E1200PC-TRL
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; D2PAK; SMD
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 255A
Kind of package: reel; tape
Type of thyristor: thyristor
Gate current: 30/50mA
Max. load current: 47A
Produkt ist nicht verfügbar
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CLB40I1200PZ-TRL
CLB40I1200PZ-TRL
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 63A; 40A; Igt: 30mA; D2PAK; SMD; reel,tape
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 40A
Kind of package: reel; tape
Type of thyristor: thyristor
Gate current: 30mA
Max. load current: 63A
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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CLB40I1200PZ-TUB CLB40I1200PZ.pdf
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 63A; 40A; Igt: 30/50mA; TO263ABHV; SMD; tube
Case: TO263ABHV
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 40A
Max. forward impulse current: 0.44kA
Kind of package: tube
Type of thyristor: thyristor
Gate current: 30/50mA
Max. load current: 63A
Produkt ist nicht verfügbar
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CLE20E1200PC-TRL
CLE20E1200PC-TRL
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 35A; 20A; Igt: 40mA; TO263; SMD; reel,tape
Case: TO263
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 20A
Kind of package: reel; tape
Type of thyristor: thyristor
Gate current: 40mA
Max. load current: 35A
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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CLE20E1200PC-TUB
CLE20E1200PC-TUB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 35A; 20A; Igt: 40mA; TO263; SMD; tube
Case: TO263
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 20A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 40mA
Max. load current: 35A
Produkt ist nicht verfügbar
Mindestbestellmenge: 1400 Stücke
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CLE30E1200PB CLE30E1200PB.pdf
CLE30E1200PB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 35A; 30A; Igt: 50mA; TO220AB; THT; tube
Case: TO220AB
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 380A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50mA
Max. load current: 35A
Produkt ist nicht verfügbar
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DHG20C1200PB DHG20C1200PB.pdf
DHG20C1200PB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 10Ax2; tube; Ifsm: 60A; TO220AB; 85W
Type of diode: rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 2.23V
Max. forward impulse current: 60A
Kind of package: tube
Reverse recovery time: 200ns
Heatsink thickness: 1.14...1.39mm
Power dissipation: 85W
Features of semiconductor devices: fast switching
Technology: Sonic FRD™
Produkt ist nicht verfügbar
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DPU30I1200PA
DPU30I1200PA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 250A; TO220-2; 123ns
Type of diode: rectifying
Case: TO220-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 250A
Kind of package: tube
Reverse recovery time: 123ns
Technology: FRED
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IXA20I1200PB IXA20I1200PB.pdf
IXA20I1200PB
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 22A; 165W; TO220-3
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate charge: 47nC
Turn-on time: 110ns
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 22A
Power dissipation: 165W
Pulsed collector current: 45A
Collector-emitter voltage: 1.2kV
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Type of transistor: IGBT
Produkt ist nicht verfügbar
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MIXA80W1200PTEH
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: E3-Pack
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 84A
Technology: XPT™
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Produkt ist nicht verfügbar
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MIXG120W1200PTEH
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: E3-Pack
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 140A
Technology: X2PT
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Produkt ist nicht verfügbar
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DSEE30-12A DSEE30-12A.PDF
DSEE30-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-3; 165W
Mounting: THT
Technology: HiPerFRED™
Type of diode: rectifying
Case: TO247-3
Reverse recovery time: 30ns
Max. forward voltage: 2.5V
Load current: 30A
Power dissipation: 165W
Max. forward impulse current: 200A
Kind of package: tube
Max. off-state voltage: 1.2kV
Semiconductor structure: double series
Features of semiconductor devices: fast switching
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
2+42.54 EUR
Mindestbestellmenge: 2 Stücke
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MEE300-06DA PCN241015_Y4-M6 screw.pdf MEx300-06DA.pdf
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 600V; If: 304A; Y4-M6; Ufmax: 1.19V
Electrical mounting: screw
Mechanical mounting: screw
Case: Y4-M6
Max. forward voltage: 1.19V
Load current: 304A
Max. forward impulse current: 2.4kA
Kind of package: bulk
Max. off-state voltage: 0.6kV
Semiconductor structure: double series
Type of semiconductor module: diode
Produkt ist nicht verfügbar
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IXXH80N65B4D1 IXXH80N65B4D1.pdf
IXXH80N65B4D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 625W
Case: TO247-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 125ns
Turn-off time: 222ns
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 430A
Produkt ist nicht verfügbar
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IXXH80N65B4H1 IXXH80N65B4H1.pdf
IXXH80N65B4H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 625W
Case: TO247-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 123ns
Turn-off time: 147ns
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 430A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCC56-12io1B MCC56-12IO1B.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
MCC56-12io1B
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Max. forward impulse current: 1.62kA
Produkt ist nicht verfügbar
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MCC56-12io8B MCC56-12IO8B.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
MCC56-12io8B
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 60A; TO240AA; Ufmax: 1.57V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.57V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Max. forward impulse current: 1.5kA
Produkt ist nicht verfügbar
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MCC56-18io1B L075.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 60A; TO240AA; Ufmax: 1.57V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.57V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Max. forward impulse current: 1.6kA
Produkt ist nicht verfügbar
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MCC56-08io1B PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MCC56-08io8B PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MCC56-14IO1
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
Mindestbestellmenge: 36 Stücke
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MCC56-14io8B PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MCC56-18io8B PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXYK180N65A5 Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYK180N65A5Datasheet.pdf
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 180A; 1.15kW; TO264
Type of transistor: IGBT
Power dissipation: 1.15kW
Case: TO264
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Turn-off time: 0.5µs
Gate-emitter voltage: ±20V
Collector current: 180A
Pulsed collector current: 1kA
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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IXYN180N65A5 Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYN180N65A5Datasheet.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; Ic: 180A; SOT227B; tube; screw
Case: SOT227B
Kind of package: tube
Collector-emitter voltage: 650V
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 180A
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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IXYX180N65A5 Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYX180N65A5Datasheet.pdf
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 220A; 1.15kW; TO247-3
Type of transistor: IGBT
Power dissipation: 1.15kW
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Turn-off time: 0.5µs
Gate-emitter voltage: ±20V
Collector current: 220A
Pulsed collector current: 1kA
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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DFE240X600NA DFE240X600NA.pdf
DFE240X600NA
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 120Ax2; SOT227B; screw
Max. load current: 240A
Max. off-state voltage: 0.6kV
Type of semiconductor module: diode
Max. forward impulse current: 1.2kA
Semiconductor structure: double independent
Technology: FRED
Mechanical mounting: screw
Electrical mounting: screw
Case: SOT227B
Kind of package: tube
Reverse recovery time: 35ns
Max. forward voltage: 1.2V
Load current: 120A x2
Produkt ist nicht verfügbar
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IXBH24N170 IXBH(t)24N170.pdf
IXBH24N170
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Gate charge: 0.14µC
Turn-on time: 190ns
Turn-off time: 1285ns
Collector current: 24A
Pulsed collector current: 230A
Gate-emitter voltage: ±20V
Power dissipation: 250W
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
1+85.08 EUR
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IXBH22N300HV
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 3kV; 60A; 290W; TO247HV
Mounting: THT
Type of transistor: IGBT
Case: TO247HV
Kind of package: tube
Collector current: 60A
Power dissipation: 290W
Collector-emitter voltage: 3kV
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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IXBH2N250 IXBH(T)2N250.pdf
IXBH2N250
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 2A; 32W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Gate charge: 10.6nC
Turn-on time: 310ns
Turn-off time: 252ns
Collector current: 2A
Pulsed collector current: 13A
Gate-emitter voltage: ±20V
Power dissipation: 32W
Collector-emitter voltage: 2.5kV
Technology: BiMOSFET™
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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IXTH120P065T IXT_120P065T.pdf
IXTH120P065T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 53ns
Technology: TrenchP™
auf Bestellung 158 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
7+12.42 EUR
11+8.5 EUR
30+7.72 EUR
60+7.64 EUR
Mindestbestellmenge: 7 Stücke
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