| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| MIXA61H1200ED | IXYS |
 Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 290W Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: H-bridge Max. off-state voltage: 1.2kV Case: E2-Pack Application: motors; photovoltaics Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Mechanical mounting: screw Technology: Sonic FRD™; XPT™ Pulsed collector current: 150A Collector current: 60A Power dissipation: 290W |
Produkt ist nicht verfügbar |
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| MIXA61WB1200TEH | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; XPT™ Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Case: E3-Pack Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: XPT™ Collector current: 190A |
Produkt ist nicht verfügbar |
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IXFR18N90P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 10.5A; Idm: 36A; 200W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 10.5A Pulsed drain current: 36A Power dissipation: 200W Case: ISOPLUS247™ Gate-source voltage: ±30V On-state resistance: 0.66Ω Mounting: THT Gate charge: 97nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 300ns Technology: HiPerFET™; Polar™ |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
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IXYY8N90C3 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO252 Type of transistor: IGBT Power dissipation: 125W Case: TO252 Mounting: SMD Gate charge: 13.3nC Kind of package: tube Collector current: 8A Collector-emitter voltage: 900V Technology: GenX3™; Planar; XPT™ Pulsed collector current: 48A Turn-on time: 39ns Turn-off time: 238ns Gate-emitter voltage: ±20V |
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IXYA8N90C3D1 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO263 Type of transistor: IGBT Power dissipation: 125W Case: TO263 Mounting: SMD Gate charge: 13.3nC Kind of package: tube Collector current: 8A Collector-emitter voltage: 900V Technology: GenX3™; Planar; XPT™ Pulsed collector current: 48A Turn-on time: 39ns Turn-off time: 238ns Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |
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IXYY8N90C3-TRL | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; 900V; 20A; 125W; DPAK Type of transistor: IGBT Power dissipation: 125W Case: DPAK Mounting: SMD Gate charge: 13.3nC Kind of package: reel; tape Collector current: 20A Collector-emitter voltage: 900V Pulsed collector current: 48A Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXFH18N90P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 18A; 540W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 18A Power dissipation: 540W Case: TO247-3 On-state resistance: 0.6Ω Mounting: THT Gate charge: 97nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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IXFX300N20X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 300A; 1250W; 170ns Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 200V Drain current: 300A Power dissipation: 1.25kW Case: PLUS247™ Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: THT Gate charge: 375nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 170ns |
auf Bestellung 21 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH150N25X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 150A; Idm: 300A Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 250V Drain current: 150A Power dissipation: 735W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: THT Gate charge: 154nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 140ns Pulsed drain current: 300A Features of semiconductor devices: ultra junction x-class |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFN300N20X3 | IXYS |
Category: Transistor modules Description: Module; single transistor; 200V; 300A; SOT227B; screw; Idm: 700A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 200V Drain current: 300A Electrical mounting: screw On-state resistance: 3.5mΩ Pulsed drain current: 700A Power dissipation: 695W Technology: HiPerFET™; X3-Class Gate-source voltage: ±30V Mechanical mounting: screw Polarisation: unipolar Kind of channel: enhancement Case: SOT227B Reverse recovery time: 172ns Gate charge: 375nC |
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IXFN150N65X2 | IXYS |
Category: Transistor modules Description: Module; single transistor; 650V; 145A; SOT227B; screw; Idm: 300A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 650V Drain current: 145A Electrical mounting: screw On-state resistance: 17mΩ Pulsed drain current: 300A Power dissipation: 1.04kW Technology: HiPerFET™; X2-Class Gate-source voltage: ±30V Mechanical mounting: screw Polarisation: unipolar Kind of channel: enhancement Case: SOT227B Reverse recovery time: 190ns Gate charge: 355nC |
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IXFN100N50Q3 | IXYS |
Category: Transistor modules Description: Module; single transistor; 500V; 82A; SOT227B; screw; Idm: 300A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 82A Electrical mounting: screw On-state resistance: 49mΩ Pulsed drain current: 300A Power dissipation: 960W Technology: HiPerFET™; Q3-Class Gate-source voltage: ±40V Mechanical mounting: screw Polarisation: unipolar Kind of channel: enhancement Case: SOT227B Reverse recovery time: 250ns Gate charge: 255nC |
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IXTA300N04T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 480W; TO263; 53ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 300A Power dissipation: 480W Case: TO263 On-state resistance: 2.5mΩ Mounting: SMD Gate charge: 145nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 53ns Features of semiconductor devices: thrench gate power mosfet |
Produkt ist nicht verfügbar |
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IXTH300N04T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 480W; TO247-3; 53ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 300A Power dissipation: 480W Case: TO247-3 On-state resistance: 2.5mΩ Mounting: THT Gate charge: 145nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 53ns Features of semiconductor devices: thrench gate power mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTP300N04T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 480W; TO220AB; 53ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 300A Power dissipation: 480W Case: TO220AB On-state resistance: 2.5mΩ Mounting: THT Gate charge: 145nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 53ns Features of semiconductor devices: thrench gate power mosfet |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXTP3N50D2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO220AB; 24ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 3A Power dissipation: 125W Case: TO220AB On-state resistance: 1.5Ω Mounting: THT Kind of package: tube Kind of channel: depletion Reverse recovery time: 24ns Gate charge: 1.07µC |
auf Bestellung 299 Stücke: Lieferzeit 14-21 Tag (e) |
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MDMA660U1600PTEH | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; 1.6kV; If: 660A; Ifsm: 5kA; module Electrical mounting: Press-Fit Max. forward impulse current: 5kA Version: module Mechanical mounting: screw Max. off-state voltage: 1.6kV Load current: 660A Case: E3-Pack Type of bridge rectifier: three-phase |
auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH30N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 30A; 460W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; PolarHV™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Power dissipation: 460W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.2Ω Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 200ns |
auf Bestellung 231 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH30N50Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO247-3; 250ns Type of transistor: N-MOSFET Technology: HiPerFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Power dissipation: 690W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: THT Gate charge: 62nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 250ns |
Produkt ist nicht verfügbar |
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IXTQ30N50L2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Power dissipation: 400W Case: TO3P On-state resistance: 0.215Ω Mounting: THT Gate charge: 240nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 0.5µs Features of semiconductor devices: linear power mosfet |
Produkt ist nicht verfügbar |
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IXTH30N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO247-3; 400ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Power dissipation: 460W Case: TO247-3 On-state resistance: 0.2Ω Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 400ns Features of semiconductor devices: standard power mosfet |
Produkt ist nicht verfügbar |
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IXTQ30N50L | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Power dissipation: 400W Case: TO3P On-state resistance: 0.2Ω Mounting: THT Gate charge: 240nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 0.5µs Features of semiconductor devices: linear power mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTQ30N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO3P; 400ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Power dissipation: 460W Case: TO3P On-state resistance: 0.2Ω Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 400ns Features of semiconductor devices: standard power mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFT30N50P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Power dissipation: 460W Case: TO268 On-state resistance: 0.2Ω Mounting: SMD Gate charge: 70nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFT30N50Q3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Power dissipation: 690W Case: TO268 On-state resistance: 0.2Ω Mounting: SMD Gate charge: 62nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTT30N50L | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Power dissipation: 400W Case: TO268 On-state resistance: 0.2Ω Mounting: SMD Gate charge: 240nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 0.5µs Features of semiconductor devices: linear power mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTT30N50L2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Power dissipation: 400W Case: TO268 On-state resistance: 0.215Ω Mounting: SMD Gate charge: 240nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 0.5µs Features of semiconductor devices: linear power mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTT30N50P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268; 400ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Power dissipation: 460W Case: TO268 On-state resistance: 0.2Ω Mounting: SMD Gate charge: 70nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 400ns Features of semiconductor devices: standard power mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MCC72-16io8B | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 115Ax2; TO240AA; screw Case: TO240AA Kind of package: bulk Type of semiconductor module: thyristor Semiconductor structure: double series Mechanical mounting: screw Electrical mounting: screw Gate current: 150/200mA Max. forward voltage: 1.74V Load current: 115A x2 Max. forward impulse current: 1.54kA Max. off-state voltage: 1.6kV |
auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC1945G | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; 1-phase Case: DIP4 Mounting: THT Type of relay: solid state Switching method: zero voltage switching Operating temperature: -40...85°C Body dimensions: 19.2x6.35x3.3mm Control current max.: 100mA Max. operating current: 1A Switched voltage: max. 400V AC Relay variant: 1-phase Insulation voltage: 3.75kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFP6N120P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 250W; TO220AB Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Power dissipation: 250W Gate charge: 92nC Polarisation: unipolar Drain current: 6A |
auf Bestellung 23 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFN90N85X | IXYS |
Category: Transistor modules Description: Module; single transistor; 850V; 90A; SOT227B; screw; Idm: 180A Drain-source voltage: 850V Drain current: 90A Power dissipation: 1.2kW Case: SOT227B Gate-source voltage: ±40V On-state resistance: 41mΩ Kind of channel: enhancement Pulsed drain current: 180A Technology: HiPerFET™; X-Class Type of semiconductor module: MOSFET transistor Polarisation: unipolar Mechanical mounting: screw Electrical mounting: screw Semiconductor structure: single transistor Gate charge: 340nC Reverse recovery time: 250ns |
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| LAA100PLTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 25Ω Mounting: SMT Case: DIP8 Body dimensions: 9.66x6.35x2.16mm Insulation voltage: 3.75kV Turn-on time: 5ms Turn-off time: 5ms Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| LAA100PTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 25Ω Mounting: SMT Case: DIP8 Body dimensions: 9.66x6.35x2.16mm Insulation voltage: 3.75kV Turn-on time: 5ms Turn-off time: 5ms Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| LAA100LSTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 25Ω Mounting: SMT Case: DIP8 Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 5ms Turn-off time: 5ms Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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LAA100PL | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 25Ω Mounting: SMT Case: DIP8 Body dimensions: 9.66x6.35x2.16mm Insulation voltage: 3.75kV Turn-on time: 5ms Turn-off time: 5ms Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| LAA100STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 25Ω Mounting: SMT Case: DIP8 Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 5ms Turn-off time: 5ms Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IXDN604SIA | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -4...4A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 81ns Turn-off time: 79ns |
auf Bestellung 448 Stücke: Lieferzeit 14-21 Tag (e) |
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IXDN609CI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO220-5 Output current: -9...9A Number of channels: 1 Mounting: THT Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns |
auf Bestellung 1024 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXDN609YI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO263-5 Output current: -9...9A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns |
auf Bestellung 788 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXDN604SI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -4...4A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 81ns Turn-off time: 79ns |
auf Bestellung 877 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXDN604SIATR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -4...4A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 81ns Turn-off time: 79ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXDN604SITR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -4...4A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 81ns Turn-off time: 79ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| MCMA110PD1800TB | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.8kV; 110A; TO240AA; Ufmax: 1.5V Type of semiconductor module: diode-thyristor Max. off-state voltage: 1.8kV Load current: 110A Case: TO240AA Max. forward voltage: 1.5V Max. forward impulse current: 1.9kA Gate current: 150mA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 36 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| MCMA140PD1800TB | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.8kV; 140A; TO240AA; Ufmax: 1.5V; screw Gate current: 150mA Max. forward voltage: 1.5V Load current: 140A Max. off-state voltage: 1.8kV Type of semiconductor module: diode-thyristor Case: TO240AA Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 36 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| MCMA200PD1800YB | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.8kV; 200A; Y4-M6; Ufmax: 2.5V; Ifsm: 6kA Gate current: 150mA Max. forward voltage: 2.5V Load current: 200A Max. off-state voltage: 1.8kV Max. forward impulse current: 6kA Type of semiconductor module: diode-thyristor Case: Y4-M6 Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IXXR100N60B3H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 100A; 400W; PLUS247™ Mounting: THT Case: PLUS247™ Kind of package: tube Turn-on time: 92ns Gate charge: 143nC Turn-off time: 350ns Gate-emitter voltage: ±20V Collector current: 100A Power dissipation: 400W Pulsed collector current: 440A Collector-emitter voltage: 600V Technology: GenX3™; Planar; XPT™ Type of transistor: IGBT |
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IXFT150N30X3HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO268 Mounting: SMD Power dissipation: 890W Gate charge: 254nC Polarisation: unipolar Technology: HiPerFET™; X3-Class Drain current: 150A Kind of channel: enhancement Drain-source voltage: 300V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO268 On-state resistance: 8.3mΩ Reverse recovery time: 167ns |
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IXFH150N30X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 300V Drain current: 150A Power dissipation: 890W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 8.3mΩ Mounting: THT Gate charge: 254nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 167ns |
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IXFK150N30X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO264 Mounting: THT Power dissipation: 890W Gate charge: 254nC Polarisation: unipolar Technology: HiPerFET™; X3-Class Drain current: 150A Kind of channel: enhancement Drain-source voltage: 300V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO264 On-state resistance: 8.3mΩ Reverse recovery time: 167ns |
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Im Einkaufswagen Stück im Wert von UAH |
| MMIX1F230N20T | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 200V; 156A; Idm: 630A Drain-source voltage: 200V Drain current: 156A Case: SMPD Polarisation: unipolar On-state resistance: 8.3mΩ Pulsed drain current: 630A Power dissipation: 600W Technology: GigaMOS™; HiPerFET™; Trench™ Kind of channel: enhancement Gate charge: 358nC Reverse recovery time: 200ns Gate-source voltage: ±20V Type of transistor: N-MOSFET Mounting: SMD |
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Im Einkaufswagen Stück im Wert von UAH | |
| VUB135-22NO1 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.7kV; Ic: 80A Type of semiconductor module: IGBT Power dissipation: 445W Mechanical mounting: screw Pulsed collector current: 150A Application: Inverter Max. off-state voltage: 1.7kV Electrical mounting: Press-in PCB Semiconductor structure: diode/transistor Case: E2-Pack Gate-emitter voltage: ±20V Collector current: 80A Topology: buck chopper; NTC thermistor; three-phase diode bridge |
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IXTA44P15T-TRL | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; 150V; 44A; 298W; D2PAK Type of transistor: P-MOSFET Drain-source voltage: 150V Drain current: 44A Power dissipation: 298W Case: D2PAK Gate-source voltage: 15V On-state resistance: 65mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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LCA125 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC Type of relay: solid state Max. operating current: 0.17A Switched voltage: max. 300V AC; max. 300V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source Contacts configuration: SPST-NO Insulation voltage: 3.75kV Turn-on time: 5ms Case: DIP6 Turn-off time: 5ms Control current max.: 50mA On-state resistance: 16Ω Mounting: THT Kind of output: MOSFET Body dimensions: 8.38x6.35x3.3mm Operating temperature: -40...85°C |
auf Bestellung 98 Stücke: Lieferzeit 14-21 Tag (e) |
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LAA125S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS Type of relay: solid state Max. operating current: 0.17A Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source Contacts configuration: SPST-NO x2 Insulation voltage: 3.75kV Turn-on time: 5ms Case: DIP8 Turn-off time: 5ms Control current max.: 50mA On-state resistance: 16Ω Mounting: SMT Kind of output: MOSFET Body dimensions: 9.66x6.35x3.3mm Operating temperature: -40...85°C |
auf Bestellung 95 Stücke: Lieferzeit 14-21 Tag (e) |
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LCA125S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC Type of relay: solid state Max. operating current: 0.17A Switched voltage: max. 300V AC; max. 300V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source Contacts configuration: SPST-NO Insulation voltage: 3.75kV Turn-on time: 5ms Case: DIP6 Turn-off time: 5ms Control current max.: 50mA On-state resistance: 16Ω Mounting: SMT Kind of output: MOSFET Body dimensions: 8.38x6.35x3.3mm Operating temperature: -40...85°C |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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LAA125LS | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS Type of relay: solid state Max. operating current: 0.17A Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source Contacts configuration: SPST-NO x2 Insulation voltage: 3.75kV Turn-on time: 5ms Case: DIP8 Turn-off time: 5ms Control current max.: 50mA On-state resistance: 16Ω Mounting: SMT Kind of output: MOSFET Body dimensions: 9.66x6.35x3.3mm Operating temperature: -40...85°C |
auf Bestellung 63 Stücke: Lieferzeit 14-21 Tag (e) |
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LCA125L | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC Type of relay: solid state Max. operating current: 0.17A Switched voltage: max. 300V AC; max. 300V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source Contacts configuration: SPST-NO Insulation voltage: 3.75kV Turn-on time: 5ms Case: DIP6 Turn-off time: 5ms Control current max.: 50mA On-state resistance: 16Ω Mounting: THT Kind of output: MOSFET Body dimensions: 8.38x6.35x3.3mm Operating temperature: -40...85°C |
auf Bestellung 99 Stücke: Lieferzeit 14-21 Tag (e) |
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LAA125P | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS Type of relay: solid state Max. operating current: 0.17A Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source Contacts configuration: SPST-NO x2 Insulation voltage: 3.75kV Turn-on time: 5ms Case: DIP8 Turn-off time: 5ms Control current max.: 50mA On-state resistance: 16Ω Mounting: SMT Kind of output: MOSFET Body dimensions: 9.66x6.35x2.16mm Operating temperature: -40...85°C |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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LAA125PL | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS Type of relay: solid state Max. operating current: 0.17A Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source Contacts configuration: SPST-NO x2 Insulation voltage: 3.75kV Turn-on time: 5ms Case: DIP8 Turn-off time: 5ms Control current max.: 50mA On-state resistance: 16Ω Mounting: SMT Kind of output: MOSFET Body dimensions: 9.66x6.35x2.16mm Operating temperature: -40...85°C |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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| MIXA61H1200ED |
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Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 290W
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 1.2kV
Case: E2-Pack
Application: motors; photovoltaics
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Mechanical mounting: screw
Technology: Sonic FRD™; XPT™
Pulsed collector current: 150A
Collector current: 60A
Power dissipation: 290W
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 290W
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 1.2kV
Case: E2-Pack
Application: motors; photovoltaics
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Mechanical mounting: screw
Technology: Sonic FRD™; XPT™
Pulsed collector current: 150A
Collector current: 60A
Power dissipation: 290W
Produkt ist nicht verfügbar
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| MIXA61WB1200TEH |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; XPT™
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Case: E3-Pack
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: XPT™
Collector current: 190A
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; XPT™
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Case: E3-Pack
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: XPT™
Collector current: 190A
Produkt ist nicht verfügbar
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| IXFR18N90P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 10.5A; Idm: 36A; 200W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 10.5A
Pulsed drain current: 36A
Power dissipation: 200W
Case: ISOPLUS247™
Gate-source voltage: ±30V
On-state resistance: 0.66Ω
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Technology: HiPerFET™; Polar™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 10.5A; Idm: 36A; 200W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 10.5A
Pulsed drain current: 36A
Power dissipation: 200W
Case: ISOPLUS247™
Gate-source voltage: ±30V
On-state resistance: 0.66Ω
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Technology: HiPerFET™; Polar™
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
| IXYY8N90C3 |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO252
Type of transistor: IGBT
Power dissipation: 125W
Case: TO252
Mounting: SMD
Gate charge: 13.3nC
Kind of package: tube
Collector current: 8A
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 48A
Turn-on time: 39ns
Turn-off time: 238ns
Gate-emitter voltage: ±20V
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO252
Type of transistor: IGBT
Power dissipation: 125W
Case: TO252
Mounting: SMD
Gate charge: 13.3nC
Kind of package: tube
Collector current: 8A
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 48A
Turn-on time: 39ns
Turn-off time: 238ns
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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| IXYA8N90C3D1 |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO263
Type of transistor: IGBT
Power dissipation: 125W
Case: TO263
Mounting: SMD
Gate charge: 13.3nC
Kind of package: tube
Collector current: 8A
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 48A
Turn-on time: 39ns
Turn-off time: 238ns
Gate-emitter voltage: ±20V
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO263
Type of transistor: IGBT
Power dissipation: 125W
Case: TO263
Mounting: SMD
Gate charge: 13.3nC
Kind of package: tube
Collector current: 8A
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 48A
Turn-on time: 39ns
Turn-off time: 238ns
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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| IXYY8N90C3-TRL |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 900V; 20A; 125W; DPAK
Type of transistor: IGBT
Power dissipation: 125W
Case: DPAK
Mounting: SMD
Gate charge: 13.3nC
Kind of package: reel; tape
Collector current: 20A
Collector-emitter voltage: 900V
Pulsed collector current: 48A
Gate-emitter voltage: ±20V
Category: SMD IGBT transistors
Description: Transistor: IGBT; 900V; 20A; 125W; DPAK
Type of transistor: IGBT
Power dissipation: 125W
Case: DPAK
Mounting: SMD
Gate charge: 13.3nC
Kind of package: reel; tape
Collector current: 20A
Collector-emitter voltage: 900V
Pulsed collector current: 48A
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| IXFH18N90P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 18A; 540W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 18A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 18A; 540W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 18A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| IXFX300N20X3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 300A; 1250W; 170ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 300A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 375nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 170ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 300A; 1250W; 170ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 300A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 375nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 170ns
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFH150N25X3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 150A; Idm: 300A
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 150A
Power dissipation: 735W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 154nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Pulsed drain current: 300A
Features of semiconductor devices: ultra junction x-class
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 150A; Idm: 300A
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 150A
Power dissipation: 735W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 154nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Pulsed drain current: 300A
Features of semiconductor devices: ultra junction x-class
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFN300N20X3 |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 200V; 300A; SOT227B; screw; Idm: 700A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 300A
Electrical mounting: screw
On-state resistance: 3.5mΩ
Pulsed drain current: 700A
Power dissipation: 695W
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±30V
Mechanical mounting: screw
Polarisation: unipolar
Kind of channel: enhancement
Case: SOT227B
Reverse recovery time: 172ns
Gate charge: 375nC
Category: Transistor modules
Description: Module; single transistor; 200V; 300A; SOT227B; screw; Idm: 700A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 300A
Electrical mounting: screw
On-state resistance: 3.5mΩ
Pulsed drain current: 700A
Power dissipation: 695W
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±30V
Mechanical mounting: screw
Polarisation: unipolar
Kind of channel: enhancement
Case: SOT227B
Reverse recovery time: 172ns
Gate charge: 375nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFN150N65X2 |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 650V; 145A; SOT227B; screw; Idm: 300A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 650V
Drain current: 145A
Electrical mounting: screw
On-state resistance: 17mΩ
Pulsed drain current: 300A
Power dissipation: 1.04kW
Technology: HiPerFET™; X2-Class
Gate-source voltage: ±30V
Mechanical mounting: screw
Polarisation: unipolar
Kind of channel: enhancement
Case: SOT227B
Reverse recovery time: 190ns
Gate charge: 355nC
Category: Transistor modules
Description: Module; single transistor; 650V; 145A; SOT227B; screw; Idm: 300A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 650V
Drain current: 145A
Electrical mounting: screw
On-state resistance: 17mΩ
Pulsed drain current: 300A
Power dissipation: 1.04kW
Technology: HiPerFET™; X2-Class
Gate-source voltage: ±30V
Mechanical mounting: screw
Polarisation: unipolar
Kind of channel: enhancement
Case: SOT227B
Reverse recovery time: 190ns
Gate charge: 355nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFN100N50Q3 |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 500V; 82A; SOT227B; screw; Idm: 300A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 82A
Electrical mounting: screw
On-state resistance: 49mΩ
Pulsed drain current: 300A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Polarisation: unipolar
Kind of channel: enhancement
Case: SOT227B
Reverse recovery time: 250ns
Gate charge: 255nC
Category: Transistor modules
Description: Module; single transistor; 500V; 82A; SOT227B; screw; Idm: 300A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 82A
Electrical mounting: screw
On-state resistance: 49mΩ
Pulsed drain current: 300A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Polarisation: unipolar
Kind of channel: enhancement
Case: SOT227B
Reverse recovery time: 250ns
Gate charge: 255nC
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Im Einkaufswagen
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| IXTA300N04T2 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 480W; TO263; 53ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 300A
Power dissipation: 480W
Case: TO263
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 53ns
Features of semiconductor devices: thrench gate power mosfet
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 480W; TO263; 53ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 300A
Power dissipation: 480W
Case: TO263
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 53ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTH300N04T2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 480W; TO247-3; 53ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 300A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 53ns
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 480W; TO247-3; 53ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 300A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 53ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IXTP300N04T2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 480W; TO220AB; 53ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 300A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 53ns
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 480W; TO220AB; 53ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 300A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 53ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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| IXTP3N50D2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO220AB; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 24ns
Gate charge: 1.07µC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO220AB; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 24ns
Gate charge: 1.07µC
auf Bestellung 299 Stücke:
Lieferzeit 14-21 Tag (e)
| MDMA660U1600PTEH |
|
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; 1.6kV; If: 660A; Ifsm: 5kA; module
Electrical mounting: Press-Fit
Max. forward impulse current: 5kA
Version: module
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Load current: 660A
Case: E3-Pack
Type of bridge rectifier: three-phase
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; 1.6kV; If: 660A; Ifsm: 5kA; module
Electrical mounting: Press-Fit
Max. forward impulse current: 5kA
Version: module
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Load current: 660A
Case: E3-Pack
Type of bridge rectifier: three-phase
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFH30N50P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 30A; 460W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 30A; 460W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
auf Bestellung 231 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFH30N50Q3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO247-3; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 690W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO247-3; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 690W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTQ30N50L2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.215Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: linear power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.215Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: linear power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTH30N50P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTQ30N50L |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: linear power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: linear power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTQ30N50P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO3P
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO3P
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFT30N50P |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFT30N50Q3 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 690W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 690W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTT30N50L |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: linear power mosfet
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: linear power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTT30N50L2 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.215Ω
Mounting: SMD
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: linear power mosfet
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.215Ω
Mounting: SMD
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: linear power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTT30N50P |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCC72-16io8B |
|
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 115Ax2; TO240AA; screw
Case: TO240AA
Kind of package: bulk
Type of semiconductor module: thyristor
Semiconductor structure: double series
Mechanical mounting: screw
Electrical mounting: screw
Gate current: 150/200mA
Max. forward voltage: 1.74V
Load current: 115A x2
Max. forward impulse current: 1.54kA
Max. off-state voltage: 1.6kV
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 115Ax2; TO240AA; screw
Case: TO240AA
Kind of package: bulk
Type of semiconductor module: thyristor
Semiconductor structure: double series
Mechanical mounting: screw
Electrical mounting: screw
Gate current: 150/200mA
Max. forward voltage: 1.74V
Load current: 115A x2
Max. forward impulse current: 1.54kA
Max. off-state voltage: 1.6kV
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
| CPC1945G |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; 1-phase
Case: DIP4
Mounting: THT
Type of relay: solid state
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 400V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; 1-phase
Case: DIP4
Mounting: THT
Type of relay: solid state
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 400V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFP6N120P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 250W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Power dissipation: 250W
Gate charge: 92nC
Polarisation: unipolar
Drain current: 6A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 250W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Power dissipation: 250W
Gate charge: 92nC
Polarisation: unipolar
Drain current: 6A
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFN90N85X |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 850V; 90A; SOT227B; screw; Idm: 180A
Drain-source voltage: 850V
Drain current: 90A
Power dissipation: 1.2kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 41mΩ
Kind of channel: enhancement
Pulsed drain current: 180A
Technology: HiPerFET™; X-Class
Type of semiconductor module: MOSFET transistor
Polarisation: unipolar
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Gate charge: 340nC
Reverse recovery time: 250ns
Category: Transistor modules
Description: Module; single transistor; 850V; 90A; SOT227B; screw; Idm: 180A
Drain-source voltage: 850V
Drain current: 90A
Power dissipation: 1.2kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 41mΩ
Kind of channel: enhancement
Pulsed drain current: 180A
Technology: HiPerFET™; X-Class
Type of semiconductor module: MOSFET transistor
Polarisation: unipolar
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Gate charge: 340nC
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LAA100PLTR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| LAA100PTR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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Stück im Wert von UAH
| LAA100LSTR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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Stück im Wert von UAH
| LAA100PL |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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| LAA100STR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| IXDN604SIA |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
auf Bestellung 448 Stücke:
Lieferzeit 14-21 Tag (e)
| IXDN609CI |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 1024 Stücke:
Lieferzeit 14-21 Tag (e)
| IXDN609YI |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 788 Stücke:
Lieferzeit 14-21 Tag (e)
| IXDN604SI |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
auf Bestellung 877 Stücke:
Lieferzeit 14-21 Tag (e)
| IXDN604SIATR |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| IXDN604SITR |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| MCMA110PD1800TB |
|
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 110A; TO240AA; Ufmax: 1.5V
Type of semiconductor module: diode-thyristor
Max. off-state voltage: 1.8kV
Load current: 110A
Case: TO240AA
Max. forward voltage: 1.5V
Max. forward impulse current: 1.9kA
Gate current: 150mA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 110A; TO240AA; Ufmax: 1.5V
Type of semiconductor module: diode-thyristor
Max. off-state voltage: 1.8kV
Load current: 110A
Case: TO240AA
Max. forward voltage: 1.5V
Max. forward impulse current: 1.9kA
Gate current: 150mA
Produkt ist nicht verfügbar
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| MCMA140PD1800TB |
|
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 140A; TO240AA; Ufmax: 1.5V; screw
Gate current: 150mA
Max. forward voltage: 1.5V
Load current: 140A
Max. off-state voltage: 1.8kV
Type of semiconductor module: diode-thyristor
Case: TO240AA
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 140A; TO240AA; Ufmax: 1.5V; screw
Gate current: 150mA
Max. forward voltage: 1.5V
Load current: 140A
Max. off-state voltage: 1.8kV
Type of semiconductor module: diode-thyristor
Case: TO240AA
Mechanical mounting: screw
Produkt ist nicht verfügbar
Mindestbestellmenge: 36 Stücke
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| MCMA200PD1800YB |
|
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 200A; Y4-M6; Ufmax: 2.5V; Ifsm: 6kA
Gate current: 150mA
Max. forward voltage: 2.5V
Load current: 200A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 6kA
Type of semiconductor module: diode-thyristor
Case: Y4-M6
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 200A; Y4-M6; Ufmax: 2.5V; Ifsm: 6kA
Gate current: 150mA
Max. forward voltage: 2.5V
Load current: 200A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 6kA
Type of semiconductor module: diode-thyristor
Case: Y4-M6
Mechanical mounting: screw
Produkt ist nicht verfügbar
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| IXXR100N60B3H1 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 400W; PLUS247™
Mounting: THT
Case: PLUS247™
Kind of package: tube
Turn-on time: 92ns
Gate charge: 143nC
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 100A
Power dissipation: 400W
Pulsed collector current: 440A
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 400W; PLUS247™
Mounting: THT
Case: PLUS247™
Kind of package: tube
Turn-on time: 92ns
Gate charge: 143nC
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 100A
Power dissipation: 400W
Pulsed collector current: 440A
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
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| IXFT150N30X3HV |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO268
Mounting: SMD
Power dissipation: 890W
Gate charge: 254nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 150A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO268
On-state resistance: 8.3mΩ
Reverse recovery time: 167ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO268
Mounting: SMD
Power dissipation: 890W
Gate charge: 254nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 150A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO268
On-state resistance: 8.3mΩ
Reverse recovery time: 167ns
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFH150N30X3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 150A
Power dissipation: 890W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: THT
Gate charge: 254nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 167ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 150A
Power dissipation: 890W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: THT
Gate charge: 254nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 167ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFK150N30X3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO264
Mounting: THT
Power dissipation: 890W
Gate charge: 254nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 150A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO264
On-state resistance: 8.3mΩ
Reverse recovery time: 167ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO264
Mounting: THT
Power dissipation: 890W
Gate charge: 254nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 150A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO264
On-state resistance: 8.3mΩ
Reverse recovery time: 167ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMIX1F230N20T |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 200V; 156A; Idm: 630A
Drain-source voltage: 200V
Drain current: 156A
Case: SMPD
Polarisation: unipolar
On-state resistance: 8.3mΩ
Pulsed drain current: 630A
Power dissipation: 600W
Technology: GigaMOS™; HiPerFET™; Trench™
Kind of channel: enhancement
Gate charge: 358nC
Reverse recovery time: 200ns
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 200V; 156A; Idm: 630A
Drain-source voltage: 200V
Drain current: 156A
Case: SMPD
Polarisation: unipolar
On-state resistance: 8.3mΩ
Pulsed drain current: 630A
Power dissipation: 600W
Technology: GigaMOS™; HiPerFET™; Trench™
Kind of channel: enhancement
Gate charge: 358nC
Reverse recovery time: 200ns
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| VUB135-22NO1 |
|
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.7kV; Ic: 80A
Type of semiconductor module: IGBT
Power dissipation: 445W
Mechanical mounting: screw
Pulsed collector current: 150A
Application: Inverter
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Case: E2-Pack
Gate-emitter voltage: ±20V
Collector current: 80A
Topology: buck chopper; NTC thermistor; three-phase diode bridge
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.7kV; Ic: 80A
Type of semiconductor module: IGBT
Power dissipation: 445W
Mechanical mounting: screw
Pulsed collector current: 150A
Application: Inverter
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Case: E2-Pack
Gate-emitter voltage: ±20V
Collector current: 80A
Topology: buck chopper; NTC thermistor; three-phase diode bridge
Produkt ist nicht verfügbar
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| IXTA44P15T-TRL |
|
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 150V; 44A; 298W; D2PAK
Type of transistor: P-MOSFET
Drain-source voltage: 150V
Drain current: 44A
Power dissipation: 298W
Case: D2PAK
Gate-source voltage: 15V
On-state resistance: 65mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 150V; 44A; 298W; D2PAK
Type of transistor: P-MOSFET
Drain-source voltage: 150V
Drain current: 44A
Power dissipation: 298W
Case: D2PAK
Gate-source voltage: 15V
On-state resistance: 65mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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Stück im Wert von UAH
| LCA125 |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 300V AC; max. 300V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP6
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: THT
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 300V AC; max. 300V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP6
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: THT
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
| LAA125S |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: SMT
Kind of output: MOSFET
Body dimensions: 9.66x6.35x3.3mm
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: SMT
Kind of output: MOSFET
Body dimensions: 9.66x6.35x3.3mm
Operating temperature: -40...85°C
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
| LCA125S |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 300V AC; max. 300V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP6
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: SMT
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 300V AC; max. 300V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP6
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: SMT
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
| LAA125LS |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: SMT
Kind of output: MOSFET
Body dimensions: 9.66x6.35x3.3mm
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: SMT
Kind of output: MOSFET
Body dimensions: 9.66x6.35x3.3mm
Operating temperature: -40...85°C
auf Bestellung 63 Stücke:
Lieferzeit 14-21 Tag (e)
| LCA125L |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 300V AC; max. 300V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP6
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: THT
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 300V AC; max. 300V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP6
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: THT
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
auf Bestellung 99 Stücke:
Lieferzeit 14-21 Tag (e)
| LAA125P |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: SMT
Kind of output: MOSFET
Body dimensions: 9.66x6.35x2.16mm
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: SMT
Kind of output: MOSFET
Body dimensions: 9.66x6.35x2.16mm
Operating temperature: -40...85°C
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
| LAA125PL |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: SMT
Kind of output: MOSFET
Body dimensions: 9.66x6.35x2.16mm
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: SMT
Kind of output: MOSFET
Body dimensions: 9.66x6.35x2.16mm
Operating temperature: -40...85°C
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)