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IXXH40N65C4D1 IXXH40N65C4D1 IXYS IXXH40N65C4D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 215A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Turn-on time: 71ns
Turn-off time: 142ns
Technology: GenX4™; Trench; XPT™
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IXFA16N60P3 IXFA16N60P3 IXYS IXFA(H,P)16N60P3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO263
On-state resistance: 470mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
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IXFP16N60P3 IXFP16N60P3 IXYS IXFA(H,P)16N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO220AB
On-state resistance: 470mΩ
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
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IXFN20N120P IXFN20N120P IXYS IXFN20N120P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 20A; SOT227B; screw; Idm: 50A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 20A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 570mΩ
Pulsed drain current: 50A
Power dissipation: 595W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 300ns
Gate charge: 193nC
Kind of channel: enhancement
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IXFH34N60X2A IXFH34N60X2A IXYS IXFH34N60X2A.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 600V; 34A; Idm: 68A; 540W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 34A
Pulsed drain current: 68A
Power dissipation: 540W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Application: automotive industry
Features of semiconductor devices: ultra junction x-class
Technology: HiPerFET™; X2-Class
Reverse recovery time: 164ns
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IXFK64N60Q3 IXFK64N60Q3 IXYS IXFK(X)64N60Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 64A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
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IXTP14N60X2 IXTP14N60X2 IXYS ixty2n65x2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 18A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 16.7nC
Kind of package: tube
Kind of channel: enhancement
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IXXH30N60B3D1 IXXH30N60B3D1 IXYS IXXH30N60B3D1-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD
Type of transistor: IGBT
Power dissipation: 270W
Case: TO247AD
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Turn-on time: 23ns
Turn-off time: 125ns
Collector current: 30A
Pulsed collector current: 115A
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IXXN110N65B4H1 IXXN110N65B4H1 IXYS IXXN110N65B4H1.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX4™; XPT™
Power dissipation: 750W
Case: SOT227B
Type of semiconductor module: IGBT
Collector current: 110A
Gate-emitter voltage: ±20V
Pulsed collector current: 650A
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
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IXXN110N65C4H1 IXXN110N65C4H1 IXYS IXXN110N65C4H1.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX3™; XPT™
Power dissipation: 750W
Case: SOT227B
Type of semiconductor module: IGBT
Collector current: 110A
Gate-emitter voltage: ±20V
Pulsed collector current: 470A
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
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IXXR110N65B4H1 IXXR110N65B4H1 IXYS IXXR110N65B4H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 70A; 455W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 455W
Case: PLUS247™
Mounting: THT
Kind of package: tube
Collector current: 70A
Gate-emitter voltage: ±20V
Pulsed collector current: 490A
Collector-emitter voltage: 650V
Turn-off time: 250ns
Gate charge: 183nC
Turn-on time: 65ns
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IXXX110N65B4H1 IXXX110N65B4H1 IXYS IXX_110N65B4H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 880W
Case: PLUS247™
Mounting: THT
Kind of package: tube
Collector current: 110A
Gate-emitter voltage: ±20V
Pulsed collector current: 570A
Collector-emitter voltage: 650V
Turn-off time: 250ns
Gate charge: 183nC
Turn-on time: 65ns
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IXTH30N60P IXTH30N60P IXYS IXTH(Q,T,V)30N60P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Power dissipation: 540W
Features of semiconductor devices: standard power mosfet
Gate charge: 82nC
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IXTQ30N60L2 IXTQ30N60L2 IXYS IXT_30N60L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO3P
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 710ns
Power dissipation: 540W
Features of semiconductor devices: linear power mosfet
Gate charge: 335nC
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IXTQ30N60P IXTQ30N60P IXYS IXTH(Q,T,V)30N60P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO3P
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Power dissipation: 540W
Features of semiconductor devices: standard power mosfet
Gate charge: 82nC
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IXTT30N60L2 IXTT30N60L2 IXYS IXT_30N60L2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 600V; 30A; 540W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 710ns
Power dissipation: 540W
Technology: Linear L2™
Gate charge: 335nC
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IXTT30N60P IXTT30N60P IXYS IXTH(Q,T,V)30N60P_S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO268
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Power dissipation: 540W
Features of semiconductor devices: standard power mosfet
Gate charge: 82nC
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IXXH30N60C3D1 IXXH30N60C3D1 IXYS IXXH30N60C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 270W
Pulsed collector current: 110A
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Turn-on time: 37ns
Gate charge: 37nC
Turn-off time: 166ns
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IXXQ30N60B3M IXXQ30N60B3M IXYS IXXQ30N60B3M.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 19A; 90W; TO3PF
Type of transistor: IGBT
Case: TO3PF
Mounting: THT
Kind of package: tube
Collector current: 19A
Gate-emitter voltage: ±20V
Power dissipation: 90W
Pulsed collector current: 140A
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Turn-on time: 57ns
Gate charge: 39nC
Turn-off time: 292ns
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IXTA15N50L2 IXTA15N50L2 IXYS IXTA(H,P)15N50L2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO263; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.48Ω
Mounting: SMD
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 570ns
Features of semiconductor devices: linear power mosfet
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IXTH15N50L2 IXTH15N50L2 IXYS IXTA(H,P)15N50L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO247-3; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 570ns
Features of semiconductor devices: linear power mosfet
auf Bestellung 230 Stücke:
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IXTP15N50L2 IXTP15N50L2 IXYS IXTA(H,P)15N50L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO220AB; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 570ns
Features of semiconductor devices: linear power mosfet
auf Bestellung 269 Stücke:
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IXFK48N60P IXFK48N60P IXYS IXF_48N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 830W
Case: TO264
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
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IXGA48N60A3 IXGA48N60A3 IXYS IXGA(P,H)48N60A3.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO263
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 54ns
Turn-off time: 925ns
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 300A
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IXGH48N60B3C1 IXGH48N60B3C1 IXYS IXGH48N60B3C1-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 48ns
Turn-off time: 347ns
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 280A
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IXGH48N60B3D1 IXGH48N60B3D1 IXYS IXGH48N60B3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 44ns
Turn-off time: 347ns
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 280A
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IXGH48N60C3D1 IXGH48N60C3D1 IXYS IXGH48N60C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 45ns
Turn-off time: 187ns
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 250A
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CPC1117N CPC1117N IXYS cpc1117n.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 150mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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52+1.4 EUR
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IXFK27N80Q IXFK27N80Q IXYS IXFK(X)27N80Q.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Power dissipation: 481W
Case: TO264
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
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IXTA08N50D2 IXTA08N50D2 IXYS IXTA(P,Y)08N50D2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO263; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO263
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
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IXTP08N50D2 IXTP08N50D2 IXYS IXTA(P,Y)08N50D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO220AB; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO220AB
On-state resistance: 4.6Ω
Mounting: THT
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
auf Bestellung 263 Stücke:
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IXTY08N50D2 IXTY08N50D2 IXYS IXTA(P,Y)08N50D2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO252; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO252
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
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IXKC15N60C5 IXYS media?resourcetype=datasheets&itemid=350D5F86-1037-44C7-AFE1-4B49E34623C5&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Super-Junction-IXKC15N60C5-Datasheet.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; ISOPLUS220™; 390ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
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IXTX90N25L2 IXTX90N25L2 IXYS IXTK(X)90N25L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 90A; 960W; PLUS247™; 266ns
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 90A
Gate charge: 640nC
Reverse recovery time: 266ns
On-state resistance: 36mΩ
Kind of channel: enhancement
Power dissipation: 960W
Features of semiconductor devices: linear power mosfet
Type of transistor: N-MOSFET
Case: PLUS247™
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IXTX90P20P IXTX90P20P IXYS IXT_90P20P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; 315ns
Case: PLUS247™
Type of transistor: P-MOSFET
Mounting: THT
Technology: PolarP™
Kind of package: tube
Drain-source voltage: -200V
Drain current: -90A
Reverse recovery time: 315ns
Gate charge: 205nC
On-state resistance: 44mΩ
Power dissipation: 890W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 138 Stücke:
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IXTP150N15X4 IXTP150N15X4 IXYS IXTH(P)150N15X4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 150A; 480W; TO220AB; 100ns
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Type of transistor: N-MOSFET
Case: TO220AB
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 105nC
Reverse recovery time: 100ns
On-state resistance: 7.2mΩ
Power dissipation: 480W
Drain current: 150A
Drain-source voltage: 150V
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IXTQ150N15P IXTQ150N15P IXYS IXTK150N15P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 150A; 714W; TO3P
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO3P
Technology: PolarHT™
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 0.19µC
Reverse recovery time: 150ns
On-state resistance: 13mΩ
Power dissipation: 714W
Drain current: 150A
Gate-source voltage: ±20V
Drain-source voltage: 150V
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IXTA3N150HV IXTA3N150HV IXYS IXTA3N150HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO263; 900ns
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Type of transistor: N-MOSFET
Case: TO263
Kind of package: tube
Mounting: SMD
Polarisation: unipolar
Gate charge: 38.6nC
Reverse recovery time: 900ns
Power dissipation: 250W
Drain current: 3A
Drain-source voltage: 1.5kV
auf Bestellung 55 Stücke:
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IXFP10N60P IXFP10N60P IXYS IXFA(P)10N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 120ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.74Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 32nC
Reverse recovery time: 120ns
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IXTP10N60P IXTP10N60P IXYS IXTP10N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.74Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Gate charge: 32nC
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
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IXFN110N60P3 IXFN110N60P3 IXYS IXFN110N60P3.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 90A; SOT227B; screw; Idm: 275A
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 90A
Power dissipation: 1.5kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 56mΩ
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Gate charge: 254nC
Reverse recovery time: 250ns
Pulsed drain current: 275A
Produkt ist nicht verfügbar
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IXFA10N60P IXFA10N60P IXYS IXFA(P)10N60P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 10A; 200W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO263
On-state resistance: 0.74Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 32nC
Reverse recovery time: 120ns
Produkt ist nicht verfügbar
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IXFB110N60P3 IXFB110N60P3 IXYS IXFB110N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 110A; 1890W; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 110A
Power dissipation: 1890W
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 56mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 254nC
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
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IXFN44N80P IXFN44N80P IXYS IXFN44N80P.pdf description Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 39A; SOT227B; screw; Idm: 100A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 39A
Pulsed drain current: 100A
Power dissipation: 694W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Gate charge: 200nC
Kind of channel: enhancement
Reverse recovery time: 250ns
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
auf Bestellung 7 Stücke:
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3+33.91 EUR
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IXTP60N10T IXTP60N10T IXYS IXTA(P)60N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO220AB; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 176W
Case: TO220AB
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 59ns
auf Bestellung 251 Stücke:
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35+2.04 EUR
50+1.66 EUR
100+1.63 EUR
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IXFN360N10T IXFN360N10T IXYS IXFN360N10T.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 360A; SOT227B; screw; Idm: 900A
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 360A
Pulsed drain current: 900A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 2.6mΩ
Gate charge: 525nC
Kind of channel: enhancement
Semiconductor structure: single transistor
Technology: GigaMOS™; HiPerFET™
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Reverse recovery time: 130ns
auf Bestellung 71 Stücke:
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IXTP160N10T IXTP160N10T IXYS IXT_160N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 100V; 160A; 430W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 160A
Power dissipation: 430W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 132nC
Kind of package: tube
Kind of channel: enhancement
Technology: Trench™
Reverse recovery time: 60ns
auf Bestellung 254 Stücke:
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13+5.79 EUR
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IXFN44N100Q3 IXFN44N100Q3 IXYS IXFN44N100Q3.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 38A; SOT227B; screw; Idm: 110A; 960W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 38A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.22Ω
Pulsed drain current: 110A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 300ns
Gate charge: 264nC
Kind of channel: enhancement
auf Bestellung 7 Stücke:
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IXTH48N65X2 IXTH48N65X2 IXYS IXTH48N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 48A; 660W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48A
Power dissipation: 660W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
auf Bestellung 253 Stücke:
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IXFH60N65X2 IXFH60N65X2 IXYS IXFH60N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; Idm: 120A; 780W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Case: TO247-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
On-state resistance: 52mΩ
Pulsed drain current: 120A
Power dissipation: 780W
Technology: HiPerFET™; X2-Class
Features of semiconductor devices: ultra junction x-class
Gate charge: 108nC
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IXFH60N65X2-4 IXFH60N65X2-4 IXYS IXFH60N65X2-4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; 780W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Case: TO247-4
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
On-state resistance: 52mΩ
Power dissipation: 780W
Technology: HiPerFET™; X2-Class
Gate charge: 108nC
Produkt ist nicht verfügbar
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IXFT60N65X2HV IXFT60N65X2HV IXYS IXFT60N65X2HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; 780W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Case: TO268
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
On-state resistance: 52mΩ
Power dissipation: 780W
Technology: HiPerFET™; X2-Class
Gate charge: 108nC
auf Bestellung 26 Stücke:
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7+10.77 EUR
Mindestbestellmenge: 7
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IXXH60N65B4 IXXH60N65B4 IXYS IXXH60N65B4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 94ns
Turn-off time: 208ns
Technology: GenX4™; Trench; XPT™
auf Bestellung 181 Stücke:
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10+7.91 EUR
11+7.01 EUR
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IXXH60N65B4H1 IXXH60N65B4H1 IXYS IXXH60N65B4H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 94ns
Turn-off time: 208ns
Technology: GenX4™; Trench; XPT™
auf Bestellung 289 Stücke:
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6+12.7 EUR
30+11.2 EUR
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IXXH60N65C4 IXXH60N65C4 IXYS IXXH60N65C4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 260A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 110ns
Turn-off time: 164ns
Technology: GenX4™; Trench; XPT™
Produkt ist nicht verfügbar
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IXXK160N65B4 IXXK160N65B4 IXYS IXXK(x)160N65B4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 860A
Mounting: THT
Gate charge: 425nC
Kind of package: tube
Turn-on time: 93ns
Turn-off time: 380ns
Technology: GenX4™; Trench; XPT™
auf Bestellung 293 Stücke:
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4+22.27 EUR
10+21.91 EUR
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IXXK160N65C4 IXYS DS100516AIXXKX160N65C4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 320A
Mounting: THT
Gate charge: 422nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 197ns
Technology: GenX4™; XPT™
Produkt ist nicht verfügbar
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IXXX160N65B4 IXXX160N65B4 IXYS IXXK(x)160N65B4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 860A
Mounting: THT
Gate charge: 425nC
Kind of package: tube
Turn-on time: 93ns
Turn-off time: 380ns
Technology: GenX4™; Trench; XPT™
Produkt ist nicht verfügbar
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IXXX160N65C4 IXYS littelfuse-discrete-igbts-ixx-160n65c4-datasheet?assetguid=dcea7101-7c37-4ad5-a03a-2aa565384e38 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 320A
Mounting: THT
Gate charge: 422nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 197ns
Technology: GenX4™; XPT™
Produkt ist nicht verfügbar
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IXFH46N65X2 IXFH46N65X2 IXYS IXFH46N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 660W; TO247-3; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 660W
Case: TO247-3
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 215 Stücke:
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7+10.22 EUR
10+7.76 EUR
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IXXH40N65C4D1 IXXH40N65C4D1.pdf
IXXH40N65C4D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 215A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Turn-on time: 71ns
Turn-off time: 142ns
Technology: GenX4™; Trench; XPT™
Produkt ist nicht verfügbar
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IXFA16N60P3 IXFA(H,P)16N60P3.pdf
IXFA16N60P3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO263
On-state resistance: 470mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 79 Stücke:
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Anzahl Preis
25+2.9 EUR
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IXFP16N60P3 IXFA(H,P)16N60P3.pdf
IXFP16N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO220AB
On-state resistance: 470mΩ
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 261 Stücke:
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Anzahl Preis
10+7.34 EUR
50+3.98 EUR
100+3.68 EUR
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IXFN20N120P IXFN20N120P.pdf
IXFN20N120P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 20A; SOT227B; screw; Idm: 50A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 20A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 570mΩ
Pulsed drain current: 50A
Power dissipation: 595W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 300ns
Gate charge: 193nC
Kind of channel: enhancement
auf Bestellung 17 Stücke:
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Anzahl Preis
4+19.22 EUR
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IXFH34N60X2A IXFH34N60X2A.pdf
IXFH34N60X2A
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 600V; 34A; Idm: 68A; 540W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 34A
Pulsed drain current: 68A
Power dissipation: 540W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Application: automotive industry
Features of semiconductor devices: ultra junction x-class
Technology: HiPerFET™; X2-Class
Reverse recovery time: 164ns
auf Bestellung 1 Stücke:
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Anzahl Preis
1+71.5 EUR
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IXFK64N60Q3 IXFK(X)64N60Q3.pdf
IXFK64N60Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 64A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 17 Stücke:
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Anzahl Preis
5+16.12 EUR
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IXTP14N60X2 ixty2n65x2.pdf
IXTP14N60X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 18A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 16.7nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+8.94 EUR
Mindestbestellmenge: 8
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IXXH30N60B3D1 IXXH30N60B3D1-DTE.pdf
IXXH30N60B3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD
Type of transistor: IGBT
Power dissipation: 270W
Case: TO247AD
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Turn-on time: 23ns
Turn-off time: 125ns
Collector current: 30A
Pulsed collector current: 115A
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.54 EUR
11+6.94 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IXXN110N65B4H1 IXXN110N65B4H1.pdf
IXXN110N65B4H1
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX4™; XPT™
Power dissipation: 750W
Case: SOT227B
Type of semiconductor module: IGBT
Collector current: 110A
Gate-emitter voltage: ±20V
Pulsed collector current: 650A
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
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IXXN110N65C4H1 IXXN110N65C4H1.pdf
IXXN110N65C4H1
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX3™; XPT™
Power dissipation: 750W
Case: SOT227B
Type of semiconductor module: IGBT
Collector current: 110A
Gate-emitter voltage: ±20V
Pulsed collector current: 470A
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
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IXXR110N65B4H1 IXXR110N65B4H1.pdf
IXXR110N65B4H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 70A; 455W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 455W
Case: PLUS247™
Mounting: THT
Kind of package: tube
Collector current: 70A
Gate-emitter voltage: ±20V
Pulsed collector current: 490A
Collector-emitter voltage: 650V
Turn-off time: 250ns
Gate charge: 183nC
Turn-on time: 65ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXXX110N65B4H1 IXX_110N65B4H1.pdf
IXXX110N65B4H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 880W
Case: PLUS247™
Mounting: THT
Kind of package: tube
Collector current: 110A
Gate-emitter voltage: ±20V
Pulsed collector current: 570A
Collector-emitter voltage: 650V
Turn-off time: 250ns
Gate charge: 183nC
Turn-on time: 65ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH30N60P IXTH(Q,T,V)30N60P_S.pdf
IXTH30N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Power dissipation: 540W
Features of semiconductor devices: standard power mosfet
Gate charge: 82nC
auf Bestellung 276 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.05 EUR
10+9.19 EUR
30+8.54 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXTQ30N60L2 IXT_30N60L2.pdf
IXTQ30N60L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO3P
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 710ns
Power dissipation: 540W
Features of semiconductor devices: linear power mosfet
Gate charge: 335nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTQ30N60P IXTH(Q,T,V)30N60P_S.pdf
IXTQ30N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO3P
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Power dissipation: 540W
Features of semiconductor devices: standard power mosfet
Gate charge: 82nC
Produkt ist nicht verfügbar
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IXTT30N60L2 IXT_30N60L2.pdf
IXTT30N60L2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 600V; 30A; 540W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 710ns
Power dissipation: 540W
Technology: Linear L2™
Gate charge: 335nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTT30N60P IXTH(Q,T,V)30N60P_S.pdf
IXTT30N60P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO268
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Power dissipation: 540W
Features of semiconductor devices: standard power mosfet
Gate charge: 82nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXXH30N60C3D1 IXXH30N60C3D1.pdf
IXXH30N60C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 270W
Pulsed collector current: 110A
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Turn-on time: 37ns
Gate charge: 37nC
Turn-off time: 166ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXXQ30N60B3M IXXQ30N60B3M.pdf
IXXQ30N60B3M
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 19A; 90W; TO3PF
Type of transistor: IGBT
Case: TO3PF
Mounting: THT
Kind of package: tube
Collector current: 19A
Gate-emitter voltage: ±20V
Power dissipation: 90W
Pulsed collector current: 140A
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Turn-on time: 57ns
Gate charge: 39nC
Turn-off time: 292ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTA15N50L2 IXTA(H,P)15N50L2.pdf
IXTA15N50L2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO263; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.48Ω
Mounting: SMD
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 570ns
Features of semiconductor devices: linear power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH15N50L2 IXTA(H,P)15N50L2.pdf
IXTH15N50L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO247-3; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 570ns
Features of semiconductor devices: linear power mosfet
auf Bestellung 230 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.8 EUR
30+7.89 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXTP15N50L2 IXTA(H,P)15N50L2.pdf
IXTP15N50L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO220AB; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 570ns
Features of semiconductor devices: linear power mosfet
auf Bestellung 269 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.94 EUR
9+8.87 EUR
10+7.74 EUR
50+7.35 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXFK48N60P IXF_48N60P.pdf
IXFK48N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 830W
Case: TO264
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXGA48N60A3 IXGA(P,H)48N60A3.pdf
IXGA48N60A3
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO263
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 54ns
Turn-off time: 925ns
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 300A
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.39 EUR
13+5.72 EUR
16+4.68 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IXGH48N60B3C1 IXGH48N60B3C1-DTE.pdf
IXGH48N60B3C1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 48ns
Turn-off time: 347ns
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 280A
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.45 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXGH48N60B3D1 IXGH48N60B3D1.pdf
IXGH48N60B3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 44ns
Turn-off time: 347ns
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 280A
auf Bestellung 253 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.25 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IXGH48N60C3D1 IXGH48N60C3D1.pdf
IXGH48N60C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 45ns
Turn-off time: 187ns
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 250A
auf Bestellung 155 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.38 EUR
9+8.62 EUR
10+7.71 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
CPC1117N cpc1117n.pdf
CPC1117N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 150mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 861 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
47+1.54 EUR
52+1.4 EUR
100+1.33 EUR
300+1.19 EUR
Mindestbestellmenge: 47
Im Einkaufswagen  Stück im Wert von  UAH
IXFK27N80Q IXFK(X)27N80Q.pdf
IXFK27N80Q
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Power dissipation: 481W
Case: TO264
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTA08N50D2 IXTA(P,Y)08N50D2.pdf
IXTA08N50D2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO263; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO263
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTP08N50D2 IXTA(P,Y)08N50D2.pdf
IXTP08N50D2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO220AB; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO220AB
On-state resistance: 4.6Ω
Mounting: THT
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
auf Bestellung 263 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.62 EUR
24+3.05 EUR
30+2.43 EUR
50+1.9 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IXTY08N50D2 IXTA(P,Y)08N50D2.pdf
IXTY08N50D2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO252; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO252
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXKC15N60C5 media?resourcetype=datasheets&itemid=350D5F86-1037-44C7-AFE1-4B49E34623C5&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Super-Junction-IXKC15N60C5-Datasheet.PDF
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; ISOPLUS220™; 390ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Produkt ist nicht verfügbar
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IXTX90N25L2 IXTK(X)90N25L2.pdf
IXTX90N25L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 90A; 960W; PLUS247™; 266ns
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 90A
Gate charge: 640nC
Reverse recovery time: 266ns
On-state resistance: 36mΩ
Kind of channel: enhancement
Power dissipation: 960W
Features of semiconductor devices: linear power mosfet
Type of transistor: N-MOSFET
Case: PLUS247™
Produkt ist nicht verfügbar
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IXTX90P20P IXT_90P20P.pdf
IXTX90P20P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; 315ns
Case: PLUS247™
Type of transistor: P-MOSFET
Mounting: THT
Technology: PolarP™
Kind of package: tube
Drain-source voltage: -200V
Drain current: -90A
Reverse recovery time: 315ns
Gate charge: 205nC
On-state resistance: 44mΩ
Power dissipation: 890W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 138 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+17.42 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXTP150N15X4 IXTH(P)150N15X4.pdf
IXTP150N15X4
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 150A; 480W; TO220AB; 100ns
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Type of transistor: N-MOSFET
Case: TO220AB
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 105nC
Reverse recovery time: 100ns
On-state resistance: 7.2mΩ
Power dissipation: 480W
Drain current: 150A
Drain-source voltage: 150V
auf Bestellung 205 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.44 EUR
8+9.44 EUR
10+7.74 EUR
25+6.61 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXTQ150N15P IXTK150N15P-DTE.pdf
IXTQ150N15P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 150A; 714W; TO3P
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO3P
Technology: PolarHT™
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 0.19µC
Reverse recovery time: 150ns
On-state resistance: 13mΩ
Power dissipation: 714W
Drain current: 150A
Gate-source voltage: ±20V
Drain-source voltage: 150V
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXTA3N150HV IXTA3N150HV.pdf
IXTA3N150HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO263; 900ns
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Type of transistor: N-MOSFET
Case: TO263
Kind of package: tube
Mounting: SMD
Polarisation: unipolar
Gate charge: 38.6nC
Reverse recovery time: 900ns
Power dissipation: 250W
Drain current: 3A
Drain-source voltage: 1.5kV
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.57 EUR
7+10.85 EUR
10+9.71 EUR
15+9.09 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IXFP10N60P IXFA(P)10N60P.pdf
IXFP10N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 120ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.74Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 32nC
Reverse recovery time: 120ns
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.49 EUR
23+3.13 EUR
26+2.77 EUR
Mindestbestellmenge: 21
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IXTP10N60P IXTP10N60P.pdf
IXTP10N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.74Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Gate charge: 32nC
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
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IXFN110N60P3 IXFN110N60P3.pdf
IXFN110N60P3
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 90A; SOT227B; screw; Idm: 275A
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 90A
Power dissipation: 1.5kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 56mΩ
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Gate charge: 254nC
Reverse recovery time: 250ns
Pulsed drain current: 275A
Produkt ist nicht verfügbar
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IXFA10N60P IXFA(P)10N60P.pdf
IXFA10N60P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 10A; 200W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO263
On-state resistance: 0.74Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 32nC
Reverse recovery time: 120ns
Produkt ist nicht verfügbar
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IXFB110N60P3 IXFB110N60P3.pdf
IXFB110N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 110A; 1890W; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 110A
Power dissipation: 1890W
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 56mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 254nC
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
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IXFN44N80P description IXFN44N80P.pdf
IXFN44N80P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 39A; SOT227B; screw; Idm: 100A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 39A
Pulsed drain current: 100A
Power dissipation: 694W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Gate charge: 200nC
Kind of channel: enhancement
Reverse recovery time: 250ns
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+33.91 EUR
Mindestbestellmenge: 3
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IXTP60N10T IXTA(P)60N10T.pdf
IXTP60N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO220AB; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 176W
Case: TO220AB
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 59ns
auf Bestellung 251 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.87 EUR
29+2.47 EUR
35+2.04 EUR
50+1.66 EUR
100+1.63 EUR
Mindestbestellmenge: 25
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IXFN360N10T IXFN360N10T.pdf
IXFN360N10T
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 360A; SOT227B; screw; Idm: 900A
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 360A
Pulsed drain current: 900A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 2.6mΩ
Gate charge: 525nC
Kind of channel: enhancement
Semiconductor structure: single transistor
Technology: GigaMOS™; HiPerFET™
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Reverse recovery time: 130ns
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+29.04 EUR
5+24.74 EUR
Mindestbestellmenge: 3
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IXTP160N10T IXT_160N10T.pdf
IXTP160N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 100V; 160A; 430W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 160A
Power dissipation: 430W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 132nC
Kind of package: tube
Kind of channel: enhancement
Technology: Trench™
Reverse recovery time: 60ns
auf Bestellung 254 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.79 EUR
50+4.46 EUR
Mindestbestellmenge: 13
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IXFN44N100Q3 IXFN44N100Q3.pdf
IXFN44N100Q3
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 38A; SOT227B; screw; Idm: 110A; 960W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 38A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.22Ω
Pulsed drain current: 110A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 300ns
Gate charge: 264nC
Kind of channel: enhancement
auf Bestellung 7 Stücke:
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Anzahl Preis
1+76.79 EUR
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IXTH48N65X2 IXTH48N65X2.pdf
IXTH48N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 48A; 660W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48A
Power dissipation: 660W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
auf Bestellung 253 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.61 EUR
10+8.37 EUR
Mindestbestellmenge: 7
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IXFH60N65X2 IXFH60N65X2.pdf
IXFH60N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; Idm: 120A; 780W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Case: TO247-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
On-state resistance: 52mΩ
Pulsed drain current: 120A
Power dissipation: 780W
Technology: HiPerFET™; X2-Class
Features of semiconductor devices: ultra junction x-class
Gate charge: 108nC
Produkt ist nicht verfügbar
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IXFH60N65X2-4 IXFH60N65X2-4.pdf
IXFH60N65X2-4
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; 780W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Case: TO247-4
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
On-state resistance: 52mΩ
Power dissipation: 780W
Technology: HiPerFET™; X2-Class
Gate charge: 108nC
Produkt ist nicht verfügbar
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IXFT60N65X2HV IXFT60N65X2HV.pdf
IXFT60N65X2HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; 780W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Case: TO268
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
On-state resistance: 52mΩ
Power dissipation: 780W
Technology: HiPerFET™; X2-Class
Gate charge: 108nC
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.77 EUR
Mindestbestellmenge: 7
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IXXH60N65B4 IXXH60N65B4.pdf
IXXH60N65B4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 94ns
Turn-off time: 208ns
Technology: GenX4™; Trench; XPT™
auf Bestellung 181 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.91 EUR
11+7.01 EUR
12+6.49 EUR
13+5.95 EUR
Mindestbestellmenge: 10
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IXXH60N65B4H1 IXXH60N65B4H1.pdf
IXXH60N65B4H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 94ns
Turn-off time: 208ns
Technology: GenX4™; Trench; XPT™
auf Bestellung 289 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.7 EUR
30+11.2 EUR
Mindestbestellmenge: 6
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IXXH60N65C4 IXXH60N65C4.pdf
IXXH60N65C4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 260A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 110ns
Turn-off time: 164ns
Technology: GenX4™; Trench; XPT™
Produkt ist nicht verfügbar
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IXXK160N65B4 IXXK(x)160N65B4.pdf
IXXK160N65B4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 860A
Mounting: THT
Gate charge: 425nC
Kind of package: tube
Turn-on time: 93ns
Turn-off time: 380ns
Technology: GenX4™; Trench; XPT™
auf Bestellung 293 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+22.27 EUR
10+21.91 EUR
Mindestbestellmenge: 4
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IXXK160N65C4 DS100516AIXXKX160N65C4.pdf
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 320A
Mounting: THT
Gate charge: 422nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 197ns
Technology: GenX4™; XPT™
Produkt ist nicht verfügbar
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IXXX160N65B4 IXXK(x)160N65B4.pdf
IXXX160N65B4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 860A
Mounting: THT
Gate charge: 425nC
Kind of package: tube
Turn-on time: 93ns
Turn-off time: 380ns
Technology: GenX4™; Trench; XPT™
Produkt ist nicht verfügbar
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IXXX160N65C4 littelfuse-discrete-igbts-ixx-160n65c4-datasheet?assetguid=dcea7101-7c37-4ad5-a03a-2aa565384e38
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 320A
Mounting: THT
Gate charge: 422nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 197ns
Technology: GenX4™; XPT™
Produkt ist nicht verfügbar
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IXFH46N65X2 IXFH46N65X2.pdf
IXFH46N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 660W; TO247-3; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 660W
Case: TO247-3
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 215 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.22 EUR
10+7.76 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
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