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IXTP15N50L2 IXTP15N50L2 IXYS IXTA(H,P)15N50L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO220AB; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 570ns
auf Bestellung 13 Stücke:
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7+11.1 EUR
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IXFK48N60P IXFK48N60P IXYS IXF_48N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 830W
Case: TO264
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
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IXGA48N60A3 IXGA48N60A3 IXYS IXGA(P,H)48N60A3.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO263
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 54ns
Turn-off time: 925ns
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 300A
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IXGH48N60B3C1 IXGH48N60B3C1 IXYS IXGH48N60B3C1-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 48ns
Turn-off time: 347ns
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 280A
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IXGH48N60B3D1 IXGH48N60B3D1 IXYS IXGH48N60B3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 44ns
Turn-off time: 347ns
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 280A
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IXGH48N60C3D1 IXGH48N60C3D1 IXYS IXGH48N60C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 45ns
Turn-off time: 187ns
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 250A
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IXFK27N80Q IXFK27N80Q IXYS IXFK(X)27N80Q.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Power dissipation: 481W
Case: TO264
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
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IXTA08N50D2 IXTA08N50D2 IXYS IXTA(P,Y)08N50D2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO263; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO263
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
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IXTP08N50D2 IXTP08N50D2 IXYS IXTA(P,Y)08N50D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO220AB; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO220AB
On-state resistance: 4.6Ω
Mounting: THT
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
auf Bestellung 263 Stücke:
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IXTY08N50D2 IXTY08N50D2 IXYS IXTA(P,Y)08N50D2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO252; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO252
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
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IXKC15N60C5 IXYS media?resourcetype=datasheets&itemid=350D5F86-1037-44C7-AFE1-4B49E34623C5&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Super-Junction-IXKC15N60C5-Datasheet.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; ISOPLUS220™; 390ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
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IXTX90N25L2 IXTX90N25L2 IXYS IXTK(X)90N25L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 90A; 960W; PLUS247™; 266ns
Case: PLUS247™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 90A
Gate charge: 640nC
Reverse recovery time: 266ns
On-state resistance: 36mΩ
Kind of channel: enhancement
Power dissipation: 960W
Features of semiconductor devices: linear power mosfet
Type of transistor: N-MOSFET
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IXTX90P20P IXTX90P20P IXYS IXT_90P20P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; 315ns
Case: PLUS247™
Type of transistor: P-MOSFET
Mounting: THT
Technology: PolarP™
Kind of package: tube
Drain-source voltage: -200V
Drain current: -90A
Reverse recovery time: 315ns
Gate charge: 205nC
On-state resistance: 44mΩ
Power dissipation: 890W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
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IXTP150N15X4 IXTP150N15X4 IXYS IXTH(P)150N15X4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 150A; 480W; TO220AB; 100ns
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Type of transistor: N-MOSFET
Case: TO220AB
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 105nC
Reverse recovery time: 100ns
On-state resistance: 7.2mΩ
Power dissipation: 480W
Drain current: 150A
Drain-source voltage: 150V
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IXTQ150N15P IXTQ150N15P IXYS IXTK150N15P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 150A; 714W; TO3P
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO3P
Technology: PolarHT™
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 0.19µC
Reverse recovery time: 150ns
On-state resistance: 13mΩ
Power dissipation: 714W
Drain current: 150A
Gate-source voltage: ±20V
Drain-source voltage: 150V
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IXTA3N150HV IXTA3N150HV IXYS IXTA3N150HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO263; 900ns
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Type of transistor: N-MOSFET
Case: TO263
Kind of package: tube
Mounting: SMD
Polarisation: unipolar
Gate charge: 38.6nC
Reverse recovery time: 900ns
Power dissipation: 250W
Drain current: 3A
Drain-source voltage: 1.5kV
auf Bestellung 55 Stücke:
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7+10.85 EUR
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IXFP10N60P IXFP10N60P IXYS IXFA(P)10N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 120ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.74Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 32nC
Reverse recovery time: 120ns
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IXTP10N60P IXTP10N60P IXYS IXTP10N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.74Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Gate charge: 32nC
Reverse recovery time: 0.5µs
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IXFN110N60P3 IXFN110N60P3 IXYS IXFN110N60P3.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 90A; SOT227B; screw; Idm: 275A
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 90A
Power dissipation: 1.5kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 56mΩ
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Gate charge: 254nC
Reverse recovery time: 250ns
Pulsed drain current: 275A
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IXFA10N60P IXFA10N60P IXYS IXFA(P)10N60P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 10A; 200W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO263
On-state resistance: 0.74Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 32nC
Reverse recovery time: 120ns
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IXFB110N60P3 IXFB110N60P3 IXYS IXFB110N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 110A; 1890W; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 110A
Power dissipation: 1890W
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 56mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 254nC
Reverse recovery time: 250ns
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IXFN44N80P IXFN44N80P IXYS IXFN44N80P.pdf description Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 39A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 39A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.19Ω
Pulsed drain current: 100A
Power dissipation: 694W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 250ns
Gate charge: 200nC
Kind of channel: enhancement
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IXTP60N10T IXTP60N10T IXYS IXTA(P)60N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO220AB; 59ns
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Gate charge: 49nC
Reverse recovery time: 59ns
On-state resistance: 18mΩ
Drain current: 60A
Drain-source voltage: 100V
Power dissipation: 176W
Kind of channel: enhancement
Mounting: THT
auf Bestellung 251 Stücke:
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35+2.04 EUR
50+1.66 EUR
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IXFN360N10T IXFN360N10T IXYS IXFN360N10T.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 360A; SOT227B; screw; Idm: 900A
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 360A
Pulsed drain current: 900A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 2.6mΩ
Gate charge: 525nC
Kind of channel: enhancement
Semiconductor structure: single transistor
Technology: GigaMOS™; HiPerFET™
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Reverse recovery time: 130ns
auf Bestellung 71 Stücke:
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IXTP160N10T IXTP160N10T IXYS IXT_160N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 100V; 160A; 430W; TO220AB
Type of transistor: N-MOSFET
Technology: Trench™
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Gate charge: 132nC
Reverse recovery time: 60ns
On-state resistance: 7mΩ
Gate-source voltage: ±20V
Drain current: 160A
Drain-source voltage: 100V
Power dissipation: 430W
Kind of channel: enhancement
Mounting: THT
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IXFN44N100Q3 IXFN44N100Q3 IXYS IXFN44N100Q3.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 38A; SOT227B; screw; Idm: 110A; 960W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 38A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.22Ω
Pulsed drain current: 110A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Gate charge: 264nC
Reverse recovery time: 300ns
Kind of channel: enhancement
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IXFH60N65X2 IXFH60N65X2 IXYS IXFH60N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; Idm: 120A; 780W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Case: TO247-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
On-state resistance: 52mΩ
Pulsed drain current: 120A
Power dissipation: 780W
Technology: HiPerFET™; X2-Class
Features of semiconductor devices: ultra junction x-class
Gate charge: 108nC
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IXFH60N65X2-4 IXFH60N65X2-4 IXYS IXFH60N65X2-4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; 780W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Case: TO247-4
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
On-state resistance: 52mΩ
Power dissipation: 780W
Technology: HiPerFET™; X2-Class
Gate charge: 108nC
Produkt ist nicht verfügbar
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IXFT60N65X2HV IXFT60N65X2HV IXYS IXFT60N65X2HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; 780W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Case: TO268
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
On-state resistance: 52mΩ
Power dissipation: 780W
Technology: HiPerFET™; X2-Class
Gate charge: 108nC
auf Bestellung 26 Stücke:
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IXXH60N65B4 IXXH60N65B4 IXYS IXXH60N65B4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 536W
Collector current: 60A
Pulsed collector current: 265A
Collector-emitter voltage: 650V
Technology: GenX4™; Trench; XPT™
Gate charge: 86nC
Turn-on time: 94ns
Turn-off time: 208ns
auf Bestellung 181 Stücke:
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IXXH60N65B4H1 IXXH60N65B4H1 IXYS IXXH60N65B4H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 536W
Collector current: 60A
Pulsed collector current: 265A
Collector-emitter voltage: 650V
Technology: GenX4™; Trench; XPT™
Gate charge: 86nC
Turn-on time: 94ns
Turn-off time: 208ns
auf Bestellung 283 Stücke:
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30+11.2 EUR
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IXXH60N65C4 IXXH60N65C4 IXYS IXXH60N65C4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 536W
Collector current: 60A
Pulsed collector current: 260A
Collector-emitter voltage: 650V
Technology: GenX4™; Trench; XPT™
Gate charge: 86nC
Turn-on time: 110ns
Turn-off time: 164ns
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IXXK160N65B4 IXXK160N65B4 IXYS IXXK(x)160N65B4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264
Type of transistor: IGBT
Case: TO264
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 940W
Collector current: 160A
Pulsed collector current: 860A
Collector-emitter voltage: 650V
Technology: GenX4™; Trench; XPT™
Gate charge: 425nC
Turn-on time: 93ns
Turn-off time: 380ns
auf Bestellung 291 Stücke:
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IXXK160N65C4 IXYS DS100516AIXXKX160N65C4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264
Type of transistor: IGBT
Case: TO264
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 940W
Collector current: 160A
Pulsed collector current: 320A
Collector-emitter voltage: 650V
Technology: GenX4™; XPT™
Gate charge: 422nC
Turn-on time: 52ns
Turn-off time: 197ns
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IXXX160N65B4 IXXX160N65B4 IXYS IXXK(x)160N65B4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™
Type of transistor: IGBT
Case: PLUS247™
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 940W
Collector current: 160A
Pulsed collector current: 860A
Collector-emitter voltage: 650V
Technology: GenX4™; Trench; XPT™
Gate charge: 425nC
Turn-on time: 93ns
Turn-off time: 380ns
Produkt ist nicht verfügbar
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IXXX160N65C4 IXYS littelfuse-discrete-igbts-ixx-160n65c4-datasheet?assetguid=dcea7101-7c37-4ad5-a03a-2aa565384e38 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™
Type of transistor: IGBT
Case: PLUS247™
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 940W
Collector current: 160A
Pulsed collector current: 320A
Collector-emitter voltage: 650V
Technology: GenX4™; XPT™
Gate charge: 422nC
Turn-on time: 52ns
Turn-off time: 197ns
Produkt ist nicht verfügbar
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IXFH46N65X2 IXFH46N65X2 IXYS IXFH46N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 660W; TO247-3; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 660W
Case: TO247-3
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Features of semiconductor devices: ultra junction x-class
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10+7.76 EUR
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CPC1150N CPC1150N IXYS CPC1150N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Operating temperature: -40...85°C
Kind of output: MOSFET
Case: SOP4
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NC
Turn-on time: 1ms
Turn-off time: 2ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 50Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
auf Bestellung 480 Stücke:
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IXFA180N10T2 IXFA180N10T2 IXYS IXFA(P)180N10T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 66ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 66ns
auf Bestellung 132 Stücke:
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11+7.08 EUR
14+5.31 EUR
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IXFP180N10T2 IXFP180N10T2 IXYS IXFA(P)180N10T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 66ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 66ns
auf Bestellung 218 Stücke:
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10+7.51 EUR
11+6.74 EUR
14+5.49 EUR
50+4.93 EUR
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IXYH75N65C3H1 IXYH75N65C3H1 IXYS IXYH75N65C3H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 179ns
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 360A
Collector-emitter voltage: 650V
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IXYN75N65C3D1 IXYN75N65C3D1 IXYS IXYN75N65C3D1.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 75A; SOT227B; 600W
Technology: GenX3™; XPT™
Power dissipation: 600W
Case: SOT227B
Max. off-state voltage: 650V
Type of semiconductor module: IGBT
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 360A
Produkt ist nicht verfügbar
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IXFP34N65X2 IXFP34N65X2 IXYS IXF_34N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO220AB; 164ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO220AB
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 164ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 218 Stücke:
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9+8.17 EUR
12+6.48 EUR
13+5.72 EUR
25+5.58 EUR
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IXGT72N60A3 IXGT72N60A3 IXYS IXG_72N60A3.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO268
Type of transistor: IGBT
Power dissipation: 540W
Case: TO268
Mounting: SMD
Gate charge: 230nC
Kind of package: tube
Collector current: 72A
Pulsed collector current: 400A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Technology: GenX3™
Turn-on time: 61ns
Turn-off time: 885ns
auf Bestellung 3 Stücke:
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IXGH72N60A3 IXGH72N60A3 IXYS IXG_72N60A3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3
Type of transistor: IGBT
Power dissipation: 540W
Case: TO247-3
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Collector current: 72A
Pulsed collector current: 400A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Technology: GenX3™; XPT™
Turn-on time: 61ns
Turn-off time: 885ns
auf Bestellung 214 Stücke:
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7+11.01 EUR
10+8.11 EUR
30+7.44 EUR
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IXFA22N60P3 IXFA22N60P3 IXYS IXFA(H,P,Q)22N60P3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO263
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 296 Stücke:
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14+5.29 EUR
16+4.76 EUR
18+4.2 EUR
50+3.89 EUR
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IXFH22N60P IXFH22N60P IXYS IXFH22N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 400W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 164 Stücke:
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9+8.21 EUR
10+7.25 EUR
11+6.52 EUR
30+6.42 EUR
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IXFH22N60P3 IXFH22N60P3 IXYS IXFA(H,P,Q)22N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 497 Stücke:
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10+7.18 EUR
16+4.65 EUR
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IXFP22N60P3 IXFP22N60P3 IXYS IXFA(H,P,Q)22N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO220AB
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 142 Stücke:
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13+5.58 EUR
15+4.78 EUR
50+4.16 EUR
100+3.89 EUR
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IXKH35N60C5 IXKH35N60C5 IXYS IXKH35N60C5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 35A; 357W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 35A
Power dissipation: 357W
Case: TO247-3
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Gate charge: 60nC
Produkt ist nicht verfügbar
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IXFN120N65X2 IXFN120N65X2 IXYS IXFN120N65X2.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 108A; SOT227B; screw; Idm: 240A
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 108A
Power dissipation: 890W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 24mΩ
Kind of channel: enhancement
Pulsed drain current: 240A
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Gate charge: 240nC
Reverse recovery time: 220ns
Produkt ist nicht verfügbar
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IXFN110N85X IXFN110N85X IXYS IXFN110N85X.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 850V; 110A; SOT227B; screw; Idm: 220A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 850V
Drain current: 110A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 33mΩ
Pulsed drain current: 220A
Power dissipation: 1170W
Technology: HiPerFET™; X-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Gate charge: 425nC
Reverse recovery time: 205ns
Kind of channel: enhancement
auf Bestellung 8 Stücke:
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1+88.66 EUR
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IXFB150N65X2 IXFB150N65X2 IXYS IXFB150N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 150A; 1560W; 260ns
Type of transistor: N-MOSFET
Power dissipation: 1.56kW
Case: PLUS264™
Mounting: THT
Gate charge: 355nC
Kind of package: tube
Reverse recovery time: 260ns
On-state resistance: 17mΩ
Gate-source voltage: ±30V
Drain current: 150A
Drain-source voltage: 650V
Kind of channel: enhancement
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
auf Bestellung 15 Stücke:
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3+31.55 EUR
Mindestbestellmenge: 3
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CLA100E1200HB CLA100E1200HB IXYS CLA100E1200HB.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 160A; 100A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. off-state voltage: 1.2kV
Gate current: 80mA
Load current: 100A
Max. load current: 160A
Max. forward impulse current: 1.19kA
auf Bestellung 184 Stücke:
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8+9.35 EUR
10+7.26 EUR
12+6.23 EUR
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IXKP20N60C5M IXKP20N60C5M IXYS IXKP20N60C5M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.6A; TO220FP; 340ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.6A
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 340ns
Gate charge: 30nC
Produkt ist nicht verfügbar
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IXTP20N65X2M IXTP20N65X2M IXYS IXTP20N65X2M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 36W; TO220FP; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 0.185Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 27nC
Reverse recovery time: 0.35µs
Produkt ist nicht verfügbar
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IXYP20N65B3D1 IXYP20N65B3D1 IXYS IXYP20N65B3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 230W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 39ns
Gate charge: 29nC
Turn-off time: 271ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 108A
Produkt ist nicht verfügbar
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IXKH20N60C5 IXKH20N60C5 IXYS IXK(H)20N60C5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Gate charge: 32nC
auf Bestellung 49 Stücke:
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9+7.95 EUR
10+7.16 EUR
12+6.33 EUR
30+5.69 EUR
Mindestbestellmenge: 9
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IXTP60N20T IXTP60N20T IXYS IXTA(P,Q)60N20T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO220AB; 118ns
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Gate charge: 73nC
Reverse recovery time: 118ns
On-state resistance: 40mΩ
Drain current: 60A
Drain-source voltage: 200V
Power dissipation: 500W
Kind of channel: enhancement
Mounting: THT
auf Bestellung 200 Stücke:
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11+6.68 EUR
14+5.31 EUR
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IXTQ60N20T IXTQ60N20T IXYS IXTA(P,Q)60N20T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO3P; 118ns
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Case: TO3P
Kind of package: tube
Polarisation: unipolar
Gate charge: 73nC
Reverse recovery time: 118ns
On-state resistance: 40mΩ
Drain current: 60A
Drain-source voltage: 200V
Power dissipation: 500W
Kind of channel: enhancement
Mounting: THT
auf Bestellung 218 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.38 EUR
16+4.76 EUR
30+4.22 EUR
120+3.55 EUR
Mindestbestellmenge: 12
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IXTP15N50L2 IXTA(H,P)15N50L2.pdf
IXTP15N50L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO220AB; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 570ns
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.1 EUR
9+8.31 EUR
10+7.35 EUR
Mindestbestellmenge: 7
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IXFK48N60P IXF_48N60P.pdf
IXFK48N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 830W
Case: TO264
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1 Stücke:
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Anzahl Preis
1+71.5 EUR
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IXGA48N60A3 IXGA(P,H)48N60A3.pdf
IXGA48N60A3
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO263
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 54ns
Turn-off time: 925ns
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 300A
auf Bestellung 48 Stücke:
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Anzahl Preis
12+6.39 EUR
13+5.72 EUR
16+4.68 EUR
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IXGH48N60B3C1 IXGH48N60B3C1-DTE.pdf
IXGH48N60B3C1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 48ns
Turn-off time: 347ns
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 280A
auf Bestellung 28 Stücke:
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Anzahl Preis
4+18.45 EUR
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IXGH48N60B3D1 IXGH48N60B3D1.pdf
IXGH48N60B3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 44ns
Turn-off time: 347ns
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 280A
auf Bestellung 253 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.25 EUR
Mindestbestellmenge: 10
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IXGH48N60C3D1 IXGH48N60C3D1.pdf
IXGH48N60C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 45ns
Turn-off time: 187ns
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 250A
auf Bestellung 155 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.38 EUR
9+8.62 EUR
10+7.71 EUR
Mindestbestellmenge: 7
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IXFK27N80Q IXFK(X)27N80Q.pdf
IXFK27N80Q
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Power dissipation: 481W
Case: TO264
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTA08N50D2 IXTA(P,Y)08N50D2.pdf
IXTA08N50D2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO263; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO263
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
Produkt ist nicht verfügbar
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IXTP08N50D2 IXTA(P,Y)08N50D2.pdf
IXTP08N50D2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO220AB; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO220AB
On-state resistance: 4.6Ω
Mounting: THT
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
auf Bestellung 263 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.62 EUR
24+3.05 EUR
30+2.43 EUR
50+1.9 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IXTY08N50D2 IXTA(P,Y)08N50D2.pdf
IXTY08N50D2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO252; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO252
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
Produkt ist nicht verfügbar
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IXKC15N60C5 media?resourcetype=datasheets&itemid=350D5F86-1037-44C7-AFE1-4B49E34623C5&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Super-Junction-IXKC15N60C5-Datasheet.PDF
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; ISOPLUS220™; 390ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Produkt ist nicht verfügbar
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IXTX90N25L2 IXTK(X)90N25L2.pdf
IXTX90N25L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 90A; 960W; PLUS247™; 266ns
Case: PLUS247™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 90A
Gate charge: 640nC
Reverse recovery time: 266ns
On-state resistance: 36mΩ
Kind of channel: enhancement
Power dissipation: 960W
Features of semiconductor devices: linear power mosfet
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IXTX90P20P IXT_90P20P.pdf
IXTX90P20P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; 315ns
Case: PLUS247™
Type of transistor: P-MOSFET
Mounting: THT
Technology: PolarP™
Kind of package: tube
Drain-source voltage: -200V
Drain current: -90A
Reverse recovery time: 315ns
Gate charge: 205nC
On-state resistance: 44mΩ
Power dissipation: 890W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 138 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+17.42 EUR
Mindestbestellmenge: 5
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IXTP150N15X4 IXTH(P)150N15X4.pdf
IXTP150N15X4
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 150A; 480W; TO220AB; 100ns
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Type of transistor: N-MOSFET
Case: TO220AB
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 105nC
Reverse recovery time: 100ns
On-state resistance: 7.2mΩ
Power dissipation: 480W
Drain current: 150A
Drain-source voltage: 150V
auf Bestellung 205 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.44 EUR
8+9.44 EUR
10+7.74 EUR
25+6.61 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXTQ150N15P IXTK150N15P-DTE.pdf
IXTQ150N15P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 150A; 714W; TO3P
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO3P
Technology: PolarHT™
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 0.19µC
Reverse recovery time: 150ns
On-state resistance: 13mΩ
Power dissipation: 714W
Drain current: 150A
Gate-source voltage: ±20V
Drain-source voltage: 150V
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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IXTA3N150HV IXTA3N150HV.pdf
IXTA3N150HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO263; 900ns
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Type of transistor: N-MOSFET
Case: TO263
Kind of package: tube
Mounting: SMD
Polarisation: unipolar
Gate charge: 38.6nC
Reverse recovery time: 900ns
Power dissipation: 250W
Drain current: 3A
Drain-source voltage: 1.5kV
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.57 EUR
7+10.85 EUR
10+9.71 EUR
15+9.09 EUR
Mindestbestellmenge: 6
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IXFP10N60P IXFA(P)10N60P.pdf
IXFP10N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 120ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.74Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 32nC
Reverse recovery time: 120ns
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.49 EUR
22+3.25 EUR
Mindestbestellmenge: 21
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IXTP10N60P IXTP10N60P.pdf
IXTP10N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.74Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Gate charge: 32nC
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
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IXFN110N60P3 IXFN110N60P3.pdf
IXFN110N60P3
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 90A; SOT227B; screw; Idm: 275A
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 90A
Power dissipation: 1.5kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 56mΩ
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Gate charge: 254nC
Reverse recovery time: 250ns
Pulsed drain current: 275A
Produkt ist nicht verfügbar
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IXFA10N60P IXFA(P)10N60P.pdf
IXFA10N60P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 10A; 200W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO263
On-state resistance: 0.74Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 32nC
Reverse recovery time: 120ns
Produkt ist nicht verfügbar
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IXFB110N60P3 IXFB110N60P3.pdf
IXFB110N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 110A; 1890W; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 110A
Power dissipation: 1890W
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 56mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 254nC
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
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IXFN44N80P description IXFN44N80P.pdf
IXFN44N80P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 39A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 39A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.19Ω
Pulsed drain current: 100A
Power dissipation: 694W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 250ns
Gate charge: 200nC
Kind of channel: enhancement
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+33.91 EUR
Mindestbestellmenge: 3
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IXTP60N10T IXTA(P)60N10T.pdf
IXTP60N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO220AB; 59ns
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Gate charge: 49nC
Reverse recovery time: 59ns
On-state resistance: 18mΩ
Drain current: 60A
Drain-source voltage: 100V
Power dissipation: 176W
Kind of channel: enhancement
Mounting: THT
auf Bestellung 251 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.87 EUR
29+2.47 EUR
35+2.04 EUR
50+1.66 EUR
100+1.63 EUR
Mindestbestellmenge: 25
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IXFN360N10T IXFN360N10T.pdf
IXFN360N10T
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 360A; SOT227B; screw; Idm: 900A
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 360A
Pulsed drain current: 900A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 2.6mΩ
Gate charge: 525nC
Kind of channel: enhancement
Semiconductor structure: single transistor
Technology: GigaMOS™; HiPerFET™
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Reverse recovery time: 130ns
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+29.04 EUR
5+24.74 EUR
Mindestbestellmenge: 3
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IXTP160N10T IXT_160N10T.pdf
IXTP160N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 100V; 160A; 430W; TO220AB
Type of transistor: N-MOSFET
Technology: Trench™
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Gate charge: 132nC
Reverse recovery time: 60ns
On-state resistance: 7mΩ
Gate-source voltage: ±20V
Drain current: 160A
Drain-source voltage: 100V
Power dissipation: 430W
Kind of channel: enhancement
Mounting: THT
auf Bestellung 254 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.79 EUR
50+4.46 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IXFN44N100Q3 IXFN44N100Q3.pdf
IXFN44N100Q3
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 38A; SOT227B; screw; Idm: 110A; 960W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 38A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.22Ω
Pulsed drain current: 110A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Gate charge: 264nC
Reverse recovery time: 300ns
Kind of channel: enhancement
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+76.79 EUR
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IXFH60N65X2 IXFH60N65X2.pdf
IXFH60N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; Idm: 120A; 780W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Case: TO247-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
On-state resistance: 52mΩ
Pulsed drain current: 120A
Power dissipation: 780W
Technology: HiPerFET™; X2-Class
Features of semiconductor devices: ultra junction x-class
Gate charge: 108nC
Produkt ist nicht verfügbar
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IXFH60N65X2-4 IXFH60N65X2-4.pdf
IXFH60N65X2-4
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; 780W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Case: TO247-4
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
On-state resistance: 52mΩ
Power dissipation: 780W
Technology: HiPerFET™; X2-Class
Gate charge: 108nC
Produkt ist nicht verfügbar
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IXFT60N65X2HV IXFT60N65X2HV.pdf
IXFT60N65X2HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; 780W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Case: TO268
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
On-state resistance: 52mΩ
Power dissipation: 780W
Technology: HiPerFET™; X2-Class
Gate charge: 108nC
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.77 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXXH60N65B4 IXXH60N65B4.pdf
IXXH60N65B4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 536W
Collector current: 60A
Pulsed collector current: 265A
Collector-emitter voltage: 650V
Technology: GenX4™; Trench; XPT™
Gate charge: 86nC
Turn-on time: 94ns
Turn-off time: 208ns
auf Bestellung 181 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.91 EUR
11+7.01 EUR
12+6.49 EUR
13+5.95 EUR
Mindestbestellmenge: 10
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IXXH60N65B4H1 IXXH60N65B4H1.pdf
IXXH60N65B4H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 536W
Collector current: 60A
Pulsed collector current: 265A
Collector-emitter voltage: 650V
Technology: GenX4™; Trench; XPT™
Gate charge: 86nC
Turn-on time: 94ns
Turn-off time: 208ns
auf Bestellung 283 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.7 EUR
30+11.2 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IXXH60N65C4 IXXH60N65C4.pdf
IXXH60N65C4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 536W
Collector current: 60A
Pulsed collector current: 260A
Collector-emitter voltage: 650V
Technology: GenX4™; Trench; XPT™
Gate charge: 86nC
Turn-on time: 110ns
Turn-off time: 164ns
Produkt ist nicht verfügbar
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IXXK160N65B4 IXXK(x)160N65B4.pdf
IXXK160N65B4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264
Type of transistor: IGBT
Case: TO264
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 940W
Collector current: 160A
Pulsed collector current: 860A
Collector-emitter voltage: 650V
Technology: GenX4™; Trench; XPT™
Gate charge: 425nC
Turn-on time: 93ns
Turn-off time: 380ns
auf Bestellung 291 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+22.27 EUR
10+21.91 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXXK160N65C4 DS100516AIXXKX160N65C4.pdf
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264
Type of transistor: IGBT
Case: TO264
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 940W
Collector current: 160A
Pulsed collector current: 320A
Collector-emitter voltage: 650V
Technology: GenX4™; XPT™
Gate charge: 422nC
Turn-on time: 52ns
Turn-off time: 197ns
Produkt ist nicht verfügbar
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IXXX160N65B4 IXXK(x)160N65B4.pdf
IXXX160N65B4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™
Type of transistor: IGBT
Case: PLUS247™
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 940W
Collector current: 160A
Pulsed collector current: 860A
Collector-emitter voltage: 650V
Technology: GenX4™; Trench; XPT™
Gate charge: 425nC
Turn-on time: 93ns
Turn-off time: 380ns
Produkt ist nicht verfügbar
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IXXX160N65C4 littelfuse-discrete-igbts-ixx-160n65c4-datasheet?assetguid=dcea7101-7c37-4ad5-a03a-2aa565384e38
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™
Type of transistor: IGBT
Case: PLUS247™
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 940W
Collector current: 160A
Pulsed collector current: 320A
Collector-emitter voltage: 650V
Technology: GenX4™; XPT™
Gate charge: 422nC
Turn-on time: 52ns
Turn-off time: 197ns
Produkt ist nicht verfügbar
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IXFH46N65X2 IXFH46N65X2.pdf
IXFH46N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 660W; TO247-3; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 660W
Case: TO247-3
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 215 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.22 EUR
10+7.76 EUR
Mindestbestellmenge: 7
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CPC1150N CPC1150N.pdf
CPC1150N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Operating temperature: -40...85°C
Kind of output: MOSFET
Case: SOP4
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NC
Turn-on time: 1ms
Turn-off time: 2ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 50Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
auf Bestellung 480 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.36 EUR
27+2.7 EUR
100+2.52 EUR
Mindestbestellmenge: 22
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IXFA180N10T2 IXFA(P)180N10T2.pdf
IXFA180N10T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 66ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 66ns
auf Bestellung 132 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+7.08 EUR
14+5.31 EUR
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IXFP180N10T2 IXFA(P)180N10T2.pdf
IXFP180N10T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 66ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 66ns
auf Bestellung 218 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.51 EUR
11+6.74 EUR
14+5.49 EUR
50+4.93 EUR
Mindestbestellmenge: 10
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IXYH75N65C3H1 IXYH75N65C3H1.pdf
IXYH75N65C3H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 179ns
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 360A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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IXYN75N65C3D1 IXYN75N65C3D1.pdf
IXYN75N65C3D1
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 75A; SOT227B; 600W
Technology: GenX3™; XPT™
Power dissipation: 600W
Case: SOT227B
Max. off-state voltage: 650V
Type of semiconductor module: IGBT
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 360A
Produkt ist nicht verfügbar
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IXFP34N65X2 IXF_34N65X2.pdf
IXFP34N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO220AB; 164ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO220AB
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 164ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 218 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.17 EUR
12+6.48 EUR
13+5.72 EUR
25+5.58 EUR
Mindestbestellmenge: 9
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IXGT72N60A3 IXG_72N60A3.pdf
IXGT72N60A3
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO268
Type of transistor: IGBT
Power dissipation: 540W
Case: TO268
Mounting: SMD
Gate charge: 230nC
Kind of package: tube
Collector current: 72A
Pulsed collector current: 400A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Technology: GenX3™
Turn-on time: 61ns
Turn-off time: 885ns
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+23.84 EUR
Mindestbestellmenge: 3
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IXGH72N60A3 IXG_72N60A3.pdf
IXGH72N60A3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3
Type of transistor: IGBT
Power dissipation: 540W
Case: TO247-3
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Collector current: 72A
Pulsed collector current: 400A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Technology: GenX3™; XPT™
Turn-on time: 61ns
Turn-off time: 885ns
auf Bestellung 214 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.01 EUR
10+8.11 EUR
30+7.44 EUR
Mindestbestellmenge: 7
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IXFA22N60P3 IXFA(H,P,Q)22N60P3.pdf
IXFA22N60P3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO263
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 296 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.29 EUR
16+4.76 EUR
18+4.2 EUR
50+3.89 EUR
Mindestbestellmenge: 14
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IXFH22N60P IXFH22N60P.pdf
IXFH22N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 400W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 164 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.21 EUR
10+7.25 EUR
11+6.52 EUR
30+6.42 EUR
Mindestbestellmenge: 9
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IXFH22N60P3 IXFA(H,P,Q)22N60P3.pdf
IXFH22N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 497 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.18 EUR
16+4.65 EUR
Mindestbestellmenge: 10
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IXFP22N60P3 IXFA(H,P,Q)22N60P3.pdf
IXFP22N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO220AB
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 142 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.58 EUR
15+4.78 EUR
50+4.16 EUR
100+3.89 EUR
Mindestbestellmenge: 13
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IXKH35N60C5 IXKH35N60C5.pdf
IXKH35N60C5
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 35A; 357W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 35A
Power dissipation: 357W
Case: TO247-3
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Gate charge: 60nC
Produkt ist nicht verfügbar
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IXFN120N65X2 IXFN120N65X2.pdf
IXFN120N65X2
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 108A; SOT227B; screw; Idm: 240A
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 108A
Power dissipation: 890W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 24mΩ
Kind of channel: enhancement
Pulsed drain current: 240A
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Gate charge: 240nC
Reverse recovery time: 220ns
Produkt ist nicht verfügbar
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IXFN110N85X IXFN110N85X.pdf
IXFN110N85X
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 850V; 110A; SOT227B; screw; Idm: 220A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 850V
Drain current: 110A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 33mΩ
Pulsed drain current: 220A
Power dissipation: 1170W
Technology: HiPerFET™; X-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Gate charge: 425nC
Reverse recovery time: 205ns
Kind of channel: enhancement
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+88.66 EUR
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IXFB150N65X2 IXFB150N65X2.pdf
IXFB150N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 150A; 1560W; 260ns
Type of transistor: N-MOSFET
Power dissipation: 1.56kW
Case: PLUS264™
Mounting: THT
Gate charge: 355nC
Kind of package: tube
Reverse recovery time: 260ns
On-state resistance: 17mΩ
Gate-source voltage: ±30V
Drain current: 150A
Drain-source voltage: 650V
Kind of channel: enhancement
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+31.55 EUR
Mindestbestellmenge: 3
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CLA100E1200HB CLA100E1200HB.pdf
CLA100E1200HB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 160A; 100A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. off-state voltage: 1.2kV
Gate current: 80mA
Load current: 100A
Max. load current: 160A
Max. forward impulse current: 1.19kA
auf Bestellung 184 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.35 EUR
10+7.26 EUR
12+6.23 EUR
Mindestbestellmenge: 8
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IXKP20N60C5M IXKP20N60C5M.pdf
IXKP20N60C5M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.6A; TO220FP; 340ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.6A
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 340ns
Gate charge: 30nC
Produkt ist nicht verfügbar
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IXTP20N65X2M IXTP20N65X2M.pdf
IXTP20N65X2M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 36W; TO220FP; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 0.185Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 27nC
Reverse recovery time: 0.35µs
Produkt ist nicht verfügbar
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IXYP20N65B3D1 IXYP20N65B3D1.pdf
IXYP20N65B3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 230W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 39ns
Gate charge: 29nC
Turn-off time: 271ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 108A
Produkt ist nicht verfügbar
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IXKH20N60C5 IXK(H)20N60C5.pdf
IXKH20N60C5
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Gate charge: 32nC
auf Bestellung 49 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+7.95 EUR
10+7.16 EUR
12+6.33 EUR
30+5.69 EUR
Mindestbestellmenge: 9
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IXTP60N20T IXTA(P,Q)60N20T.pdf
IXTP60N20T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO220AB; 118ns
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Gate charge: 73nC
Reverse recovery time: 118ns
On-state resistance: 40mΩ
Drain current: 60A
Drain-source voltage: 200V
Power dissipation: 500W
Kind of channel: enhancement
Mounting: THT
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.68 EUR
14+5.31 EUR
Mindestbestellmenge: 11
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IXTQ60N20T IXTA(P,Q)60N20T.pdf
IXTQ60N20T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO3P; 118ns
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Case: TO3P
Kind of package: tube
Polarisation: unipolar
Gate charge: 73nC
Reverse recovery time: 118ns
On-state resistance: 40mΩ
Drain current: 60A
Drain-source voltage: 200V
Power dissipation: 500W
Kind of channel: enhancement
Mounting: THT
auf Bestellung 218 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.38 EUR
16+4.76 EUR
30+4.22 EUR
120+3.55 EUR
Mindestbestellmenge: 12
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