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DSSK16-01A DSSK16-01A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991CB5685A43C78BF&compId=DSSK16-01A.pdf?ci_sign=35827b5f37f5a6cfb99fe5eba93b91f91214ea59 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 8Ax2; TO220AB; Ufmax: 0.65V
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 100V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.65V
Max. forward impulse current: 120A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Power dissipation: 90W
auf Bestellung 4 Stücke:
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4+17.88 EUR
Mindestbestellmenge: 4
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IXDN75N120 IXDN75N120 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE9888FC4531A0538BF&compId=IXDN75N120.pdf?ci_sign=06ae6ac4014868b47b0ab2941b0edc4f457b8058 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 150A; SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Collector current: 150A
Gate-emitter voltage: ±20V
Power dissipation: 660W
Pulsed collector current: 190A
Max. off-state voltage: 1.2kV
Technology: NPT
Type of semiconductor module: IGBT
Case: SOT227B
Produkt ist nicht verfügbar
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IXKC19N60C5 IXYS Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; ISOPLUS220™; 430ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Reverse recovery time: 430ns
Produkt ist nicht verfügbar
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IXGA20N120A3 IXGA20N120A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A97D0BC12338BF&compId=IXG_20N120A3.pdf?ci_sign=81a9cfbab75e86f2646df4a6079a62ddaef02364 Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 50nC
Kind of package: tube
Turn-off time: 1.53µs
Turn-on time: 66ns
Technology: GenX3™; PT
auf Bestellung 600 Stücke:
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8+9.85 EUR
50+5.49 EUR
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IXGA20N120B3 IXGA20N120B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DABBDF3F92A3820&compId=IXGA(P)20N120B3.pdf?ci_sign=693eed04e1173248dc559ce9f74a6894b0b31c5f Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 180W
Case: TO263
Mounting: SMD
Gate charge: 51nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 61ns
Turn-off time: 720ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Produkt ist nicht verfügbar
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IXFQ140N20X3 IXFQ140N20X3 IXYS IXF_140N20X3_HV.pdf 200VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Technology: HiPerFET™; X3-Class
auf Bestellung 45 Stücke:
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6+12.96 EUR
7+11.48 EUR
10+10.31 EUR
30+10.24 EUR
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IXFH22N65X2 IXFH22N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7E33E399F98BF&compId=IXF_22N65X2.pdf?ci_sign=0c8f69f0a301813161ad4a66663b73b0511fd05a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22A; 390W; TO247-3; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO247-3
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 208 Stücke:
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11+7.04 EUR
13+5.75 EUR
15+4.96 EUR
30+4.7 EUR
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IXFP22N65X2 IXFP22N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7E33E399F98BF&compId=IXF_22N65X2.pdf?ci_sign=0c8f69f0a301813161ad4a66663b73b0511fd05a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22A; 390W; TO220AB; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO220AB
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 244 Stücke:
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13+5.82 EUR
15+4.85 EUR
50+3.98 EUR
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IXFP22N65X2M IXFP22N65X2M IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEB2D04AD8BB8BF&compId=IXFP22N65X2M.pdf?ci_sign=641ab7467b1b0dee58df8d256bcf0bafa48e6d62 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 37W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 37W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Technology: HiPerFET™; X2-Class
auf Bestellung 263 Stücke:
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14+5.42 EUR
19+3.83 EUR
50+3.29 EUR
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IXGR48N60C3D1 IXGR48N60C3D1 IXYS IXGR48N60C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 26A; 125W; ISOPLUS247™
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 26A
Power dissipation: 125W
Case: ISOPLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 230A
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Turn-off time: 187ns
Turn-on time: 45ns
Technology: GenX3™; PT
auf Bestellung 303 Stücke:
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4+19.51 EUR
5+16.92 EUR
10+15.06 EUR
30+14.31 EUR
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IXXH40N65B4 IXXH40N65B4 IXYS IXXH40N65B4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 67ns
Turn-off time: 252ns
Technology: GenX4™; Trench; XPT™
auf Bestellung 46 Stücke:
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11+6.89 EUR
12+6.21 EUR
14+5.48 EUR
30+4.93 EUR
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IXXH40N65B4D1 IXXH40N65B4D1 IXYS IXXH40N65B4D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 67ns
Turn-off time: 252ns
Technology: GenX4™; Trench; XPT™
Produkt ist nicht verfügbar
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IXXH40N65B4H1 IXXH40N65B4H1 IXYS IXXH40N65B4H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 207ns
Technology: GenX4™; Trench; XPT™
Produkt ist nicht verfügbar
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IXXH40N65C4D1 IXXH40N65C4D1 IXYS IXXH40N65C4D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 215A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Turn-on time: 71ns
Turn-off time: 142ns
Technology: GenX4™; Trench; XPT™
Produkt ist nicht verfügbar
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IXFA16N60P3 IXFA16N60P3 IXYS IXFA(H,P)16N60P3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO263
On-state resistance: 470mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 79 Stücke:
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25+2.95 EUR
Mindestbestellmenge: 25
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IXFP16N60P3 IXFP16N60P3 IXYS IXFA(H,P)16N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO220AB
On-state resistance: 470mΩ
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 261 Stücke:
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10+7.34 EUR
50+3.98 EUR
100+3.68 EUR
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IXDH20N120 IXDH20N120 IXYS IXDH20N120_IXDH20N120D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 200W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Technology: NPT
Turn-on time: 175ns
Turn-off time: 570ns
auf Bestellung 204 Stücke:
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9+8.05 EUR
10+7.25 EUR
12+6.41 EUR
30+5.75 EUR
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IXFK20N120P IXFK20N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A92D5F7781F8BF&compId=IXF_20N120P.pdf?ci_sign=f8c33191702a2a0a34deabac8302d8b29e2cedba Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 20A; 780W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 20A
Power dissipation: 780W
Case: TO264
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFN20N120P IXFN20N120P IXYS IXFN20N120P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 20A; SOT227B; screw; Idm: 50A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 20A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 570mΩ
Pulsed drain current: 50A
Power dissipation: 595W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Gate charge: 193nC
Reverse recovery time: 300ns
Kind of channel: enhancement
auf Bestellung 17 Stücke:
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4+20.76 EUR
10+19.25 EUR
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IXFR20N120P IXFR20N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6B4B820&compId=IXFR20N120P.pdf?ci_sign=3ec4bae68a596108eefc3f91613f3b2a858b33a0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 13A; 290W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 13A
Power dissipation: 290W
Case: ISOPLUS247™
On-state resistance: 0.63Ω
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 30 Stücke:
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2+36.49 EUR
3+32.72 EUR
10+28.94 EUR
30+26.08 EUR
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IXFX20N120P IXFX20N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A92D5F7781F8BF&compId=IXF_20N120P.pdf?ci_sign=f8c33191702a2a0a34deabac8302d8b29e2cedba Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 20A; 780W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 20A
Power dissipation: 780W
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
auf Bestellung 1 Stücke:
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1+71.5 EUR
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IXGH20N120A3 IXGH20N120A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A97D0BC12338BF&compId=IXG_20N120A3.pdf?ci_sign=81a9cfbab75e86f2646df4a6079a62ddaef02364 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 180W
Case: TO247-3
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 66ns
Turn-off time: 1.53µs
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
auf Bestellung 87 Stücke:
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7+10.67 EUR
30+6.41 EUR
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IXGP20N120A3 IXGP20N120A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A97D0BC12338BF&compId=IXG_20N120A3.pdf?ci_sign=81a9cfbab75e86f2646df4a6079a62ddaef02364 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220AB
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 180W
Case: TO220AB
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Collector-emitter voltage: 1.2kV
Turn-on time: 66ns
Gate charge: 50nC
Turn-off time: 1.53µs
auf Bestellung 26 Stücke:
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8+9.52 EUR
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IXGP20N120B3 IXGP20N120B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DABBDF3F92A3820&compId=IXGA(P)20N120B3.pdf?ci_sign=693eed04e1173248dc559ce9f74a6894b0b31c5f Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 180W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Collector-emitter voltage: 1.2kV
Turn-on time: 61ns
Gate charge: 51nC
Turn-off time: 720ns
auf Bestellung 37 Stücke:
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8+9.35 EUR
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IXYA20N120C3HV IXYA20N120C3HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE992CA262386AE78BF&compId=IXY_20N120C3_HV.pdf?ci_sign=69a66f2254c263ce93b6ce37d84ed69d8c442da0 Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO263-2
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 278W
Case: TO263-2
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 60ns
Turn-off time: 215ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Produkt ist nicht verfügbar
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IXYH20N120C3 IXYH20N120C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DABCDC0A34F5820&compId=IXYH(P)20N120C3_HV.pdf?ci_sign=30885aa545e063da4e84233ac795b9469a3a4fce Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 278W
Case: TO247-3
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 60ns
Turn-off time: 0.22µs
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Produkt ist nicht verfügbar
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IXYH20N120C3D1 IXYH20N120C3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE992C9991A201638BF&compId=IXYH20N120C3D1.pdf?ci_sign=e120799112c6baf937977feba949005fd83421df Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 60ns
Turn-off time: 0.22µs
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 88A
auf Bestellung 247 Stücke:
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7+10.22 EUR
10+9.87 EUR
30+9.75 EUR
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IXYJ20N120C3D1 IXYS IXYJ20N120C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 21A; 105W; TO247
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 105W
Case: TO247
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 20ns
Turn-off time: 90ns
Collector current: 21A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Produkt ist nicht verfügbar
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IXYP20N120C3 IXYP20N120C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DABCDC0A34F5820&compId=IXYH(P)20N120C3_HV.pdf?ci_sign=30885aa545e063da4e84233ac795b9469a3a4fce Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 278W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Collector-emitter voltage: 1.2kV
Turn-on time: 60ns
Gate charge: 53nC
Turn-off time: 200ns
Produkt ist nicht verfügbar
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IXYT20N120C3D1HV IXYT20N120C3D1HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAC5027B64E7820&compId=IXYT20N120C3D1HV.pdf?ci_sign=919d7cd0b29220ac3b93c7617f2b3fdc9d073e25 Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 17A; 230W; TO268HV
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 230W
Case: TO268HV
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 60ns
Turn-off time: 0.22µs
Collector current: 17A
Gate-emitter voltage: ±20V
Pulsed collector current: 88A
Produkt ist nicht verfügbar
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CPC1390GV CPC1390GV IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492320042C0C7&compId=CPC1390.pdf?ci_sign=02d27267f722e98ae1add0787a699a87ad053c38 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 140mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 140mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: THT
Case: DIP4
Operating temperature: -40...85°C
Turn-on time: 1ms
Turn-off time: 1ms
Body dimensions: 4.57x6.35x3.3mm
Control current max.: 50mA
Insulation voltage: 5kV
Kind of output: MOSFET
auf Bestellung 450 Stücke:
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20+3.59 EUR
100+2.36 EUR
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IXFH34N60X2A IXFH34N60X2A IXYS IXFH34N60X2A.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 600V; 34A; Idm: 68A; 540W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 34A
Pulsed drain current: 68A
Power dissipation: 540W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Application: automotive industry
Technology: HiPerFET™; X2-Class
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 164ns
auf Bestellung 2 Stücke:
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IXFK64N60Q3 IXFK64N60Q3 IXYS IXFK(X)64N60Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 64A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 17 Stücke:
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IXTP14N60X2 IXTP14N60X2 IXYS ixty2n65x2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; TO220AB
Mounting: THT
Kind of package: tube
Case: TO220AB
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 18A
Gate charge: 16.7nC
On-state resistance: 0.25Ω
Power dissipation: 180W
Gate-source voltage: ±30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
auf Bestellung 8 Stücke:
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IXXH30N60B3D1 IXXH30N60B3D1 IXYS IXXH30N60B3D1-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD
Type of transistor: IGBT
Power dissipation: 270W
Case: TO247AD
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Turn-on time: 23ns
Turn-off time: 125ns
Collector current: 30A
Pulsed collector current: 115A
Gate-emitter voltage: ±20V
auf Bestellung 40 Stücke:
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10+7.35 EUR
11+7.01 EUR
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IXXN110N65B4H1 IXXN110N65B4H1 IXYS IXXN110N65B4H1.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX4™; XPT™
Power dissipation: 750W
Case: SOT227B
Type of semiconductor module: IGBT
Collector current: 110A
Gate-emitter voltage: ±20V
Pulsed collector current: 650A
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
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IXXN110N65C4H1 IXXN110N65C4H1 IXYS IXXN110N65C4H1.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX3™; XPT™
Power dissipation: 750W
Case: SOT227B
Type of semiconductor module: IGBT
Collector current: 110A
Gate-emitter voltage: ±20V
Pulsed collector current: 470A
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
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IXXR110N65B4H1 IXXR110N65B4H1 IXYS IXXR110N65B4H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 70A; 455W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 455W
Case: PLUS247™
Mounting: THT
Kind of package: tube
Collector current: 70A
Gate-emitter voltage: ±20V
Pulsed collector current: 490A
Collector-emitter voltage: 650V
Turn-off time: 250ns
Gate charge: 183nC
Turn-on time: 65ns
Produkt ist nicht verfügbar
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IXXX110N65B4H1 IXXX110N65B4H1 IXYS IXX_110N65B4H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 880W
Case: PLUS247™
Mounting: THT
Kind of package: tube
Collector current: 110A
Gate-emitter voltage: ±20V
Pulsed collector current: 570A
Collector-emitter voltage: 650V
Turn-off time: 250ns
Gate charge: 183nC
Turn-on time: 65ns
Produkt ist nicht verfügbar
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IXTH30N60P IXTH30N60P IXYS IXTH(Q,T,V)30N60P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 500ns
Mounting: THT
Kind of package: tube
Case: TO247-3
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Gate charge: 82nC
Reverse recovery time: 0.5µs
On-state resistance: 0.24Ω
Power dissipation: 540W
Kind of channel: enhancement
Type of transistor: N-MOSFET
auf Bestellung 276 Stücke:
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7+11.05 EUR
10+9.19 EUR
30+8.54 EUR
Mindestbestellmenge: 7
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IXTQ30N60L2 IXTQ30N60L2 IXYS IXT_30N60L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO3P
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 710ns
Power dissipation: 540W
Features of semiconductor devices: linear power mosfet
Gate charge: 335nC
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IXTQ30N60P IXTQ30N60P IXYS IXTH(Q,T,V)30N60P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO3P
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Power dissipation: 540W
Features of semiconductor devices: standard power mosfet
Gate charge: 82nC
Produkt ist nicht verfügbar
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IXTT30N60L2 IXTT30N60L2 IXYS IXT_30N60L2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 600V; 30A; 540W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 710ns
Power dissipation: 540W
Technology: Linear L2™
Gate charge: 335nC
Produkt ist nicht verfügbar
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IXTT30N60P IXTT30N60P IXYS IXTH(Q,T,V)30N60P_S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO268
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Power dissipation: 540W
Features of semiconductor devices: standard power mosfet
Gate charge: 82nC
Produkt ist nicht verfügbar
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IXXH30N60C3D1 IXXH30N60C3D1 IXYS IXXH30N60C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 270W
Pulsed collector current: 110A
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Turn-on time: 37ns
Gate charge: 37nC
Turn-off time: 166ns
Produkt ist nicht verfügbar
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IXXQ30N60B3M IXXQ30N60B3M IXYS IXXQ30N60B3M.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 19A; 90W; TO3PF
Type of transistor: IGBT
Case: TO3PF
Mounting: THT
Kind of package: tube
Collector current: 19A
Gate-emitter voltage: ±20V
Power dissipation: 90W
Pulsed collector current: 140A
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Turn-on time: 57ns
Gate charge: 39nC
Turn-off time: 292ns
Produkt ist nicht verfügbar
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IXFX55N50 IXFX55N50 IXYS IXFX50N50_IXFX55N50.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 55A; 520W; PLUS247™; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 55A
Power dissipation: 520W
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
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IXTA15N50L2 IXTA15N50L2 IXYS IXTA(H,P)15N50L2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO263; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.48Ω
Mounting: SMD
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 570ns
Features of semiconductor devices: linear power mosfet
Produkt ist nicht verfügbar
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IXTH15N50L2 IXTH15N50L2 IXYS IXTA(H,P)15N50L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO247-3; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 570ns
Features of semiconductor devices: linear power mosfet
auf Bestellung 230 Stücke:
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7+11.8 EUR
30+7.89 EUR
Mindestbestellmenge: 7
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IXTP15N50L2 IXTP15N50L2 IXYS IXTA(H,P)15N50L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO220AB; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 570ns
Features of semiconductor devices: linear power mosfet
auf Bestellung 270 Stücke:
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7+10.94 EUR
9+8.87 EUR
10+7.74 EUR
50+7.35 EUR
Mindestbestellmenge: 7
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IXFH100N30X3 IXFH100N30X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBCDA1FA5458BF&compId=IXF_100N30X3_HV.pdf?ci_sign=291cad4ee4c338832090f6d9d224fee09028d26c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 100A; 48W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 100A
Power dissipation: 48W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 130ns
auf Bestellung 20 Stücke:
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6+14.21 EUR
10+13.31 EUR
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IXXH100N60C3 IXXH100N60C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB4E5B26A23820&compId=IXXH100N60C3.pdf?ci_sign=d34a8167233d2e352f733d1eb503fd101039fa57 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3
Mounting: THT
Turn-off time: 0.22µs
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 380A
Collector-emitter voltage: 600V
Power dissipation: 830W
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Turn-on time: 95s
Gate charge: 150nC
Produkt ist nicht verfügbar
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IXFK48N60P IXFK48N60P IXYS IXF_48N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 830W
Case: TO264
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1 Stücke:
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IXGA48N60A3 IXGA48N60A3 IXYS IXGA(P,H)48N60A3.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO263
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 300A
Collector-emitter voltage: 600V
Turn-on time: 54ns
Turn-off time: 925ns
auf Bestellung 48 Stücke:
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13+5.82 EUR
14+5.22 EUR
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IXGH48N60B3C1 IXGH48N60B3C1 IXYS IXGH48N60B3C1-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 280A
Collector-emitter voltage: 600V
Turn-on time: 48ns
Turn-off time: 347ns
auf Bestellung 28 Stücke:
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4+20.72 EUR
10+18.76 EUR
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IXGH48N60B3D1 IXGH48N60B3D1 IXYS IXGH48N60B3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 280A
Collector-emitter voltage: 600V
Turn-on time: 44ns
Turn-off time: 347ns
auf Bestellung 264 Stücke:
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IXGH48N60C3D1 IXGH48N60C3D1 IXYS IXGH48N60C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 250A
Collector-emitter voltage: 600V
Turn-on time: 45ns
Turn-off time: 187ns
auf Bestellung 172 Stücke:
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7+11.58 EUR
8+9.84 EUR
10+8.75 EUR
30+7.56 EUR
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CPC1117N CPC1117N IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A38CFB799FD8BF&compId=cpc1117n.pdf?ci_sign=42c5ed3862d631ccfa4f4ee18df640d714bcd8ff Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 150mA; max.60VAC
Case: SOP4
On-state resistance: 16Ω
Turn-off time: 10ms
Turn-on time: 10ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 150mA
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Switched voltage: max. 60V AC; max. 60V DC
auf Bestellung 861 Stücke:
Lieferzeit 14-21 Tag (e)
47+1.54 EUR
52+1.4 EUR
100+1.33 EUR
300+1.19 EUR
Mindestbestellmenge: 47
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MMO62-12IO6 MMO62-12IO6 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B8F478DC2F5F9E28&compId=MMo62-12io6-DTE.pdf?ci_sign=10ad4c18982c2d0b7cdd649068aaadc5dde3b16c Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 30A; SOT227B; Ufmax: 1.29V
Type of semiconductor module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.2kV
Load current: 30A
Case: SOT227B
Max. forward voltage: 1.29V
Max. forward impulse current: 0.4kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 100mA
auf Bestellung 71 Stücke:
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3+30.97 EUR
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CPC1945Y CPC1945Y IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4384923AE38BF&compId=CPC1945Y.pdf?ci_sign=a1bb4db4c3f93e15666e949682f73ba24088c71a Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.120VAC; OptoMOS
Type of relay: solid state
Max. operating current: 1A
Switched voltage: max. 120V AC
Manufacturer series: OptoMOS
Relay variant: 1-phase
On-state resistance: 0.34Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Switching method: zero voltage switching
Turn-on time: 5ms
Turn-off time: 3ms
Body dimensions: 19.2x6.35x3.3mm
Control current max.: 100mA
Insulation voltage: 3.75kV
Kind of output: MOSFET
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.7 EUR
22+3.36 EUR
25+2.93 EUR
75+2.32 EUR
Mindestbestellmenge: 20
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DSSK16-01A pVersion=0046&contRep=ZT&docId=005056AB82531EE991CB5685A43C78BF&compId=DSSK16-01A.pdf?ci_sign=35827b5f37f5a6cfb99fe5eba93b91f91214ea59
DSSK16-01A
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 8Ax2; TO220AB; Ufmax: 0.65V
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 100V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.65V
Max. forward impulse current: 120A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Power dissipation: 90W
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+17.88 EUR
Mindestbestellmenge: 4
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IXDN75N120 pVersion=0046&contRep=ZT&docId=005056AB82531EE9888FC4531A0538BF&compId=IXDN75N120.pdf?ci_sign=06ae6ac4014868b47b0ab2941b0edc4f457b8058
IXDN75N120
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 150A; SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Collector current: 150A
Gate-emitter voltage: ±20V
Power dissipation: 660W
Pulsed collector current: 190A
Max. off-state voltage: 1.2kV
Technology: NPT
Type of semiconductor module: IGBT
Case: SOT227B
Produkt ist nicht verfügbar
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IXKC19N60C5
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; ISOPLUS220™; 430ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Reverse recovery time: 430ns
Produkt ist nicht verfügbar
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IXGA20N120A3 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A97D0BC12338BF&compId=IXG_20N120A3.pdf?ci_sign=81a9cfbab75e86f2646df4a6079a62ddaef02364
IXGA20N120A3
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 50nC
Kind of package: tube
Turn-off time: 1.53µs
Turn-on time: 66ns
Technology: GenX3™; PT
auf Bestellung 600 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.85 EUR
50+5.49 EUR
Mindestbestellmenge: 8
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IXGA20N120B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DABBDF3F92A3820&compId=IXGA(P)20N120B3.pdf?ci_sign=693eed04e1173248dc559ce9f74a6894b0b31c5f
IXGA20N120B3
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 180W
Case: TO263
Mounting: SMD
Gate charge: 51nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 61ns
Turn-off time: 720ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Produkt ist nicht verfügbar
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IXFQ140N20X3 IXF_140N20X3_HV.pdf 200VProductBrief.pdf
IXFQ140N20X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Technology: HiPerFET™; X3-Class
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.96 EUR
7+11.48 EUR
10+10.31 EUR
30+10.24 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IXFH22N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7E33E399F98BF&compId=IXF_22N65X2.pdf?ci_sign=0c8f69f0a301813161ad4a66663b73b0511fd05a
IXFH22N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22A; 390W; TO247-3; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO247-3
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 208 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+7.04 EUR
13+5.75 EUR
15+4.96 EUR
30+4.7 EUR
Mindestbestellmenge: 11
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IXFP22N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7E33E399F98BF&compId=IXF_22N65X2.pdf?ci_sign=0c8f69f0a301813161ad4a66663b73b0511fd05a
IXFP22N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22A; 390W; TO220AB; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO220AB
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 244 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.82 EUR
15+4.85 EUR
50+3.98 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IXFP22N65X2M pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEB2D04AD8BB8BF&compId=IXFP22N65X2M.pdf?ci_sign=641ab7467b1b0dee58df8d256bcf0bafa48e6d62
IXFP22N65X2M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 37W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 37W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Technology: HiPerFET™; X2-Class
auf Bestellung 263 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.42 EUR
19+3.83 EUR
50+3.29 EUR
Mindestbestellmenge: 14
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IXGR48N60C3D1 IXGR48N60C3D1.pdf
IXGR48N60C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 26A; 125W; ISOPLUS247™
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 26A
Power dissipation: 125W
Case: ISOPLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 230A
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Turn-off time: 187ns
Turn-on time: 45ns
Technology: GenX3™; PT
auf Bestellung 303 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+19.51 EUR
5+16.92 EUR
10+15.06 EUR
30+14.31 EUR
Mindestbestellmenge: 4
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IXXH40N65B4 IXXH40N65B4.pdf
IXXH40N65B4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 67ns
Turn-off time: 252ns
Technology: GenX4™; Trench; XPT™
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.89 EUR
12+6.21 EUR
14+5.48 EUR
30+4.93 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IXXH40N65B4D1 IXXH40N65B4D1.pdf
IXXH40N65B4D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 67ns
Turn-off time: 252ns
Technology: GenX4™; Trench; XPT™
Produkt ist nicht verfügbar
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IXXH40N65B4H1 IXXH40N65B4H1.pdf
IXXH40N65B4H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 207ns
Technology: GenX4™; Trench; XPT™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXXH40N65C4D1 IXXH40N65C4D1.pdf
IXXH40N65C4D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 215A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Turn-on time: 71ns
Turn-off time: 142ns
Technology: GenX4™; Trench; XPT™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFA16N60P3 IXFA(H,P)16N60P3.pdf
IXFA16N60P3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO263
On-state resistance: 470mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.95 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
IXFP16N60P3 IXFA(H,P)16N60P3.pdf
IXFP16N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO220AB
On-state resistance: 470mΩ
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 261 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.34 EUR
50+3.98 EUR
100+3.68 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IXDH20N120 IXDH20N120_IXDH20N120D1.pdf
IXDH20N120
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 200W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Technology: NPT
Turn-on time: 175ns
Turn-off time: 570ns
auf Bestellung 204 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.05 EUR
10+7.25 EUR
12+6.41 EUR
30+5.75 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IXFK20N120P pVersion=0046&contRep=ZT&docId=005056AB82531EE995A92D5F7781F8BF&compId=IXF_20N120P.pdf?ci_sign=f8c33191702a2a0a34deabac8302d8b29e2cedba
IXFK20N120P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 20A; 780W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 20A
Power dissipation: 780W
Case: TO264
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFN20N120P IXFN20N120P.pdf
IXFN20N120P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 20A; SOT227B; screw; Idm: 50A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 20A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 570mΩ
Pulsed drain current: 50A
Power dissipation: 595W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Gate charge: 193nC
Reverse recovery time: 300ns
Kind of channel: enhancement
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+20.76 EUR
10+19.25 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXFR20N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6B4B820&compId=IXFR20N120P.pdf?ci_sign=3ec4bae68a596108eefc3f91613f3b2a858b33a0
IXFR20N120P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 13A; 290W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 13A
Power dissipation: 290W
Case: ISOPLUS247™
On-state resistance: 0.63Ω
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+36.49 EUR
3+32.72 EUR
10+28.94 EUR
30+26.08 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXFX20N120P pVersion=0046&contRep=ZT&docId=005056AB82531EE995A92D5F7781F8BF&compId=IXF_20N120P.pdf?ci_sign=f8c33191702a2a0a34deabac8302d8b29e2cedba
IXFX20N120P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 20A; 780W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 20A
Power dissipation: 780W
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXGH20N120A3 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A97D0BC12338BF&compId=IXG_20N120A3.pdf?ci_sign=81a9cfbab75e86f2646df4a6079a62ddaef02364
IXGH20N120A3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 180W
Case: TO247-3
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 66ns
Turn-off time: 1.53µs
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
auf Bestellung 87 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.67 EUR
30+6.41 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXGP20N120A3 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A97D0BC12338BF&compId=IXG_20N120A3.pdf?ci_sign=81a9cfbab75e86f2646df4a6079a62ddaef02364
IXGP20N120A3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220AB
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 180W
Case: TO220AB
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Collector-emitter voltage: 1.2kV
Turn-on time: 66ns
Gate charge: 50nC
Turn-off time: 1.53µs
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.52 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IXGP20N120B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DABBDF3F92A3820&compId=IXGA(P)20N120B3.pdf?ci_sign=693eed04e1173248dc559ce9f74a6894b0b31c5f
IXGP20N120B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 180W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Collector-emitter voltage: 1.2kV
Turn-on time: 61ns
Gate charge: 51nC
Turn-off time: 720ns
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.35 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IXYA20N120C3HV pVersion=0046&contRep=ZT&docId=005056AB82531EE992CA262386AE78BF&compId=IXY_20N120C3_HV.pdf?ci_sign=69a66f2254c263ce93b6ce37d84ed69d8c442da0
IXYA20N120C3HV
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO263-2
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 278W
Case: TO263-2
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 60ns
Turn-off time: 215ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYH20N120C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DABCDC0A34F5820&compId=IXYH(P)20N120C3_HV.pdf?ci_sign=30885aa545e063da4e84233ac795b9469a3a4fce
IXYH20N120C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 278W
Case: TO247-3
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 60ns
Turn-off time: 0.22µs
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYH20N120C3D1 pVersion=0046&contRep=ZT&docId=005056AB82531EE992C9991A201638BF&compId=IXYH20N120C3D1.pdf?ci_sign=e120799112c6baf937977feba949005fd83421df
IXYH20N120C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 60ns
Turn-off time: 0.22µs
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 88A
auf Bestellung 247 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.22 EUR
10+9.87 EUR
30+9.75 EUR
Mindestbestellmenge: 7
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IXYJ20N120C3D1 IXYJ20N120C3D1.pdf
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 21A; 105W; TO247
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 105W
Case: TO247
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 20ns
Turn-off time: 90ns
Collector current: 21A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Produkt ist nicht verfügbar
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IXYP20N120C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DABCDC0A34F5820&compId=IXYH(P)20N120C3_HV.pdf?ci_sign=30885aa545e063da4e84233ac795b9469a3a4fce
IXYP20N120C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 278W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Collector-emitter voltage: 1.2kV
Turn-on time: 60ns
Gate charge: 53nC
Turn-off time: 200ns
Produkt ist nicht verfügbar
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IXYT20N120C3D1HV pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAC5027B64E7820&compId=IXYT20N120C3D1HV.pdf?ci_sign=919d7cd0b29220ac3b93c7617f2b3fdc9d073e25
IXYT20N120C3D1HV
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 17A; 230W; TO268HV
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 230W
Case: TO268HV
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 60ns
Turn-off time: 0.22µs
Collector current: 17A
Gate-emitter voltage: ±20V
Pulsed collector current: 88A
Produkt ist nicht verfügbar
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CPC1390GV pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492320042C0C7&compId=CPC1390.pdf?ci_sign=02d27267f722e98ae1add0787a699a87ad053c38
CPC1390GV
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 140mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 140mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: THT
Case: DIP4
Operating temperature: -40...85°C
Turn-on time: 1ms
Turn-off time: 1ms
Body dimensions: 4.57x6.35x3.3mm
Control current max.: 50mA
Insulation voltage: 5kV
Kind of output: MOSFET
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.59 EUR
100+2.36 EUR
Mindestbestellmenge: 20
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IXFH34N60X2A IXFH34N60X2A.pdf
IXFH34N60X2A
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 600V; 34A; Idm: 68A; 540W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 34A
Pulsed drain current: 68A
Power dissipation: 540W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Application: automotive industry
Technology: HiPerFET™; X2-Class
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 164ns
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
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IXFK64N60Q3 IXFK(X)64N60Q3.pdf
IXFK64N60Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 64A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+16.3 EUR
Mindestbestellmenge: 5
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IXTP14N60X2 ixty2n65x2.pdf
IXTP14N60X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; TO220AB
Mounting: THT
Kind of package: tube
Case: TO220AB
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 18A
Gate charge: 16.7nC
On-state resistance: 0.25Ω
Power dissipation: 180W
Gate-source voltage: ±30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+8.94 EUR
Mindestbestellmenge: 8
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IXXH30N60B3D1 IXXH30N60B3D1-DTE.pdf
IXXH30N60B3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD
Type of transistor: IGBT
Power dissipation: 270W
Case: TO247AD
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Turn-on time: 23ns
Turn-off time: 125ns
Collector current: 30A
Pulsed collector current: 115A
Gate-emitter voltage: ±20V
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.35 EUR
11+7.01 EUR
Mindestbestellmenge: 10
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IXXN110N65B4H1 IXXN110N65B4H1.pdf
IXXN110N65B4H1
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX4™; XPT™
Power dissipation: 750W
Case: SOT227B
Type of semiconductor module: IGBT
Collector current: 110A
Gate-emitter voltage: ±20V
Pulsed collector current: 650A
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
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IXXN110N65C4H1 IXXN110N65C4H1.pdf
IXXN110N65C4H1
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX3™; XPT™
Power dissipation: 750W
Case: SOT227B
Type of semiconductor module: IGBT
Collector current: 110A
Gate-emitter voltage: ±20V
Pulsed collector current: 470A
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
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IXXR110N65B4H1 IXXR110N65B4H1.pdf
IXXR110N65B4H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 70A; 455W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 455W
Case: PLUS247™
Mounting: THT
Kind of package: tube
Collector current: 70A
Gate-emitter voltage: ±20V
Pulsed collector current: 490A
Collector-emitter voltage: 650V
Turn-off time: 250ns
Gate charge: 183nC
Turn-on time: 65ns
Produkt ist nicht verfügbar
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IXXX110N65B4H1 IXX_110N65B4H1.pdf
IXXX110N65B4H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 880W
Case: PLUS247™
Mounting: THT
Kind of package: tube
Collector current: 110A
Gate-emitter voltage: ±20V
Pulsed collector current: 570A
Collector-emitter voltage: 650V
Turn-off time: 250ns
Gate charge: 183nC
Turn-on time: 65ns
Produkt ist nicht verfügbar
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IXTH30N60P IXTH(Q,T,V)30N60P_S.pdf
IXTH30N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 500ns
Mounting: THT
Kind of package: tube
Case: TO247-3
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Gate charge: 82nC
Reverse recovery time: 0.5µs
On-state resistance: 0.24Ω
Power dissipation: 540W
Kind of channel: enhancement
Type of transistor: N-MOSFET
auf Bestellung 276 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.05 EUR
10+9.19 EUR
30+8.54 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXTQ30N60L2 IXT_30N60L2.pdf
IXTQ30N60L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO3P
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 710ns
Power dissipation: 540W
Features of semiconductor devices: linear power mosfet
Gate charge: 335nC
Produkt ist nicht verfügbar
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IXTQ30N60P IXTH(Q,T,V)30N60P_S.pdf
IXTQ30N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO3P
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Power dissipation: 540W
Features of semiconductor devices: standard power mosfet
Gate charge: 82nC
Produkt ist nicht verfügbar
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IXTT30N60L2 IXT_30N60L2.pdf
IXTT30N60L2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 600V; 30A; 540W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 710ns
Power dissipation: 540W
Technology: Linear L2™
Gate charge: 335nC
Produkt ist nicht verfügbar
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IXTT30N60P IXTH(Q,T,V)30N60P_S.pdf
IXTT30N60P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO268
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Power dissipation: 540W
Features of semiconductor devices: standard power mosfet
Gate charge: 82nC
Produkt ist nicht verfügbar
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IXXH30N60C3D1 IXXH30N60C3D1.pdf
IXXH30N60C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 270W
Pulsed collector current: 110A
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Turn-on time: 37ns
Gate charge: 37nC
Turn-off time: 166ns
Produkt ist nicht verfügbar
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IXXQ30N60B3M IXXQ30N60B3M.pdf
IXXQ30N60B3M
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 19A; 90W; TO3PF
Type of transistor: IGBT
Case: TO3PF
Mounting: THT
Kind of package: tube
Collector current: 19A
Gate-emitter voltage: ±20V
Power dissipation: 90W
Pulsed collector current: 140A
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Turn-on time: 57ns
Gate charge: 39nC
Turn-off time: 292ns
Produkt ist nicht verfügbar
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IXFX55N50 IXFX50N50_IXFX55N50.pdf
IXFX55N50
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 55A; 520W; PLUS247™; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 55A
Power dissipation: 520W
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
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IXTA15N50L2 IXTA(H,P)15N50L2.pdf
IXTA15N50L2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO263; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.48Ω
Mounting: SMD
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 570ns
Features of semiconductor devices: linear power mosfet
Produkt ist nicht verfügbar
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IXTH15N50L2 IXTA(H,P)15N50L2.pdf
IXTH15N50L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO247-3; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 570ns
Features of semiconductor devices: linear power mosfet
auf Bestellung 230 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.8 EUR
30+7.89 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXTP15N50L2 IXTA(H,P)15N50L2.pdf
IXTP15N50L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO220AB; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 570ns
Features of semiconductor devices: linear power mosfet
auf Bestellung 270 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.94 EUR
9+8.87 EUR
10+7.74 EUR
50+7.35 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXFH100N30X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBCDA1FA5458BF&compId=IXF_100N30X3_HV.pdf?ci_sign=291cad4ee4c338832090f6d9d224fee09028d26c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c
IXFH100N30X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 100A; 48W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 100A
Power dissipation: 48W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 130ns
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+14.21 EUR
10+13.31 EUR
Mindestbestellmenge: 6
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IXXH100N60C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB4E5B26A23820&compId=IXXH100N60C3.pdf?ci_sign=d34a8167233d2e352f733d1eb503fd101039fa57
IXXH100N60C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3
Mounting: THT
Turn-off time: 0.22µs
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 380A
Collector-emitter voltage: 600V
Power dissipation: 830W
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Turn-on time: 95s
Gate charge: 150nC
Produkt ist nicht verfügbar
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IXFK48N60P IXF_48N60P.pdf
IXFK48N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 830W
Case: TO264
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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IXGA48N60A3 IXGA(P,H)48N60A3.pdf
IXGA48N60A3
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO263
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 300A
Collector-emitter voltage: 600V
Turn-on time: 54ns
Turn-off time: 925ns
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.82 EUR
14+5.22 EUR
16+4.62 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IXGH48N60B3C1 IXGH48N60B3C1-DTE.pdf
IXGH48N60B3C1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 280A
Collector-emitter voltage: 600V
Turn-on time: 48ns
Turn-off time: 347ns
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+20.72 EUR
10+18.76 EUR
Mindestbestellmenge: 4
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IXGH48N60B3D1 IXGH48N60B3D1.pdf
IXGH48N60B3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 280A
Collector-emitter voltage: 600V
Turn-on time: 44ns
Turn-off time: 347ns
auf Bestellung 264 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.4 EUR
30+7.95 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IXGH48N60C3D1 IXGH48N60C3D1.pdf
IXGH48N60C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 250A
Collector-emitter voltage: 600V
Turn-on time: 45ns
Turn-off time: 187ns
auf Bestellung 172 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.58 EUR
8+9.84 EUR
10+8.75 EUR
30+7.56 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
CPC1117N pVersion=0046&contRep=ZT&docId=005056AB82531EE995A38CFB799FD8BF&compId=cpc1117n.pdf?ci_sign=42c5ed3862d631ccfa4f4ee18df640d714bcd8ff
CPC1117N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 150mA; max.60VAC
Case: SOP4
On-state resistance: 16Ω
Turn-off time: 10ms
Turn-on time: 10ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 150mA
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Switched voltage: max. 60V AC; max. 60V DC
auf Bestellung 861 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
47+1.54 EUR
52+1.4 EUR
100+1.33 EUR
300+1.19 EUR
Mindestbestellmenge: 47
Im Einkaufswagen  Stück im Wert von  UAH
MMO62-12IO6 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B8F478DC2F5F9E28&compId=MMo62-12io6-DTE.pdf?ci_sign=10ad4c18982c2d0b7cdd649068aaadc5dde3b16c
MMO62-12IO6
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 30A; SOT227B; Ufmax: 1.29V
Type of semiconductor module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.2kV
Load current: 30A
Case: SOT227B
Max. forward voltage: 1.29V
Max. forward impulse current: 0.4kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 100mA
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+30.97 EUR
Mindestbestellmenge: 3
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CPC1945Y pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4384923AE38BF&compId=CPC1945Y.pdf?ci_sign=a1bb4db4c3f93e15666e949682f73ba24088c71a
CPC1945Y
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.120VAC; OptoMOS
Type of relay: solid state
Max. operating current: 1A
Switched voltage: max. 120V AC
Manufacturer series: OptoMOS
Relay variant: 1-phase
On-state resistance: 0.34Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Switching method: zero voltage switching
Turn-on time: 5ms
Turn-off time: 3ms
Body dimensions: 19.2x6.35x3.3mm
Control current max.: 100mA
Insulation voltage: 3.75kV
Kind of output: MOSFET
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.7 EUR
22+3.36 EUR
25+2.93 EUR
75+2.32 EUR
Mindestbestellmenge: 20
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