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IXGA48N60A3 IXGA48N60A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE53B33B1DDB820&compId=IXGA(P%2CH)48N60A3.pdf?ci_sign=3de66c7eadd74b16b8875cd3a050200178617cff Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO263
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Turn-off time: 925ns
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 300A
Collector-emitter voltage: 600V
Turn-on time: 54ns
auf Bestellung 48 Stücke:
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13+5.82 EUR
14+5.22 EUR
16+4.62 EUR
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IXGH48N60B3C1 IXGH48N60B3C1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B381E6C0878A5E28&compId=IXGH48N60B3C1-DTE.pdf?ci_sign=721837839cfff5b1fb45e8394d3190c2f5f5cb01 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Turn-off time: 347ns
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 280A
Collector-emitter voltage: 600V
Turn-on time: 48ns
auf Bestellung 28 Stücke:
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4+18.63 EUR
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IXGH48N60B3D1 IXGH48N60B3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BF95DB9A0A17820&compId=IXGH48N60B3D1.pdf?ci_sign=b88ef15e046b033bedf0667f01dda5696c066ffb Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Turn-off time: 347ns
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 280A
Collector-emitter voltage: 600V
Turn-on time: 44ns
auf Bestellung 270 Stücke:
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30+7.95 EUR
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IXGH48N60C3D1 IXGH48N60C3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFA3ABB7C7C7820&compId=IXGH48N60C3D1.pdf?ci_sign=9e8b41e0496f7b4552d6efd4bbf0620554365264 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Turn-off time: 187ns
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 250A
Collector-emitter voltage: 600V
Turn-on time: 45ns
auf Bestellung 202 Stücke:
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7+11.58 EUR
8+9.84 EUR
10+8.75 EUR
30+7.56 EUR
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CPC1117N CPC1117N IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A38CFB799FD8BF&compId=cpc1117n.pdf?ci_sign=42c5ed3862d631ccfa4f4ee18df640d714bcd8ff Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 150mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 861 Stücke:
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47+1.54 EUR
52+1.4 EUR
100+1.33 EUR
300+1.19 EUR
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MMO62-12IO6 MMO62-12IO6 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B8F478DC2F5F9E28&compId=MMo62-12io6-DTE.pdf?ci_sign=10ad4c18982c2d0b7cdd649068aaadc5dde3b16c Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 30A; SOT227B; Ufmax: 1.29V
Type of semiconductor module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.2kV
Load current: 30A
Case: SOT227B
Max. forward voltage: 1.29V
Max. forward impulse current: 0.4kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 100mA
auf Bestellung 71 Stücke:
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3+30.97 EUR
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DSP8-12A DSP8-12A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF09019D31818BF&compId=DSP8-12A.pdf?ci_sign=4c1df90e7f9f491684d5e61712aacbe284a80828 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 100A; TO220AB; 100W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: TO220AB
Max. forward voltage: 1.08V
Max. forward impulse current: 100A
Power dissipation: 100W
Kind of package: tube
auf Bestellung 6 Stücke:
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DSP8-12AS-TRL DSP8-12AS-TRL IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC4740C124560C4&compId=DSP8-12AS.pdf?ci_sign=c7e88fe8621910a4bd9800ab0ed9988bac77f308 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120kA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Max. forward voltage: 1.08V
Max. forward impulse current: 120kA
Power dissipation: 100W
Kind of package: reel; tape
auf Bestellung 792 Stücke:
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24+3 EUR
27+2.73 EUR
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DSP8-12AS-TUB DSP8-12AS-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC4740C124560C4&compId=DSP8-12AS.pdf?ci_sign=c7e88fe8621910a4bd9800ab0ed9988bac77f308 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Max. forward voltage: 1.08V
Max. forward impulse current: 120A
Power dissipation: 100W
Kind of package: tube
Produkt ist nicht verfügbar
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CPC1945Y CPC1945Y IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4384923AE38BF&compId=CPC1945Y.pdf?ci_sign=a1bb4db4c3f93e15666e949682f73ba24088c71a Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.120VAC; OptoMOS
Type of relay: solid state
Max. operating current: 1A
Switched voltage: max. 120V AC
Manufacturer series: OptoMOS
Relay variant: 1-phase
On-state resistance: 0.34Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Switching method: zero voltage switching
Turn-on time: 5ms
Turn-off time: 3ms
Body dimensions: 19.2x6.35x3.3mm
Control current max.: 100mA
Insulation voltage: 3.75kV
Kind of output: MOSFET
auf Bestellung 96 Stücke:
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20+3.7 EUR
22+3.36 EUR
25+2.93 EUR
75+2.32 EUR
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IXFH24N80P IXFH24N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCB94722F39820&compId=IXFH(K%2CT)24N80P.pdf?ci_sign=de1ae4e3915cc5ae12d6efcc3663703594898c91 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFK24N80P IXFK24N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCB94722F39820&compId=IXFH(K%2CT)24N80P.pdf?ci_sign=de1ae4e3915cc5ae12d6efcc3663703594898c91 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO264
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 2 Stücke:
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2+35.75 EUR
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IXFK27N80Q IXFK27N80Q IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC5E93D821F820&compId=IXFK(X)27N80Q.pdf?ci_sign=8daef21b45c2446e7f867bb9111fde52758b8bbd Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Power dissipation: 481W
Case: TO264
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFK34N80 IXFK34N80 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC5531C0BEB820&compId=IXFK(X)34N80.pdf?ci_sign=c21449cd8db7a186cc87835ff14b3420826840c0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Power dissipation: 568W
Case: TO264
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFK44N80P IXFK44N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D55A88536A9820&compId=IXFK(X)44N80P.pdf?ci_sign=fe7a22c35d7909b220aeebf7fe0c0b6a1d419d2d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 255 Stücke:
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4+21.04 EUR
5+20.06 EUR
10+18.9 EUR
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IXFK44N80Q3 IXFK44N80Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D555DA4D32F820&compId=IXFK(X)44N80Q3.pdf?ci_sign=dd049728423ed64df76c419a8fd12eba8ab2dd10 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 18 Stücke:
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4+19.32 EUR
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MXHV9910B MXHV9910B IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED884E51E01529F2A18&compId=MXHV9910.pdf?ci_sign=ffd62dce3bffad03e2e18b014812ca4d02bc5561 Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; SO8
Topology: buck
Type of integrated circuit: driver
Mounting: SMD
Integrated circuit features: linear dimming; PWM
Kind of package: tube
Case: SO8
Operating temperature: -40...85°C
Output current: 0.28A
Input voltage: 8...450V
Output voltage: 12V
Frequency: 64kHz
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
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MXHV9910BE IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED884E51E01529F2A18&compId=MXHV9910.pdf?ci_sign=ffd62dce3bffad03e2e18b014812ca4d02bc5561 Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; 12V
Topology: buck
Type of integrated circuit: driver
Mounting: SMD
Integrated circuit features: linear dimming; PWM
Kind of package: tube
Case: SO8-EP
Operating temperature: -40...85°C
Output current: 0.28A
Input voltage: 8...450V
Output voltage: 12V
Frequency: 64kHz
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
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MXHV9910BETR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED884E51E01529F2A18&compId=MXHV9910.pdf?ci_sign=ffd62dce3bffad03e2e18b014812ca4d02bc5561 Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; 12V
Topology: buck
Type of integrated circuit: driver
Mounting: SMD
Integrated circuit features: linear dimming; PWM
Kind of package: reel; tape
Case: SO8-EP
Operating temperature: -40...85°C
Output current: 0.28A
Input voltage: 8...450V
Output voltage: 12V
Frequency: 64kHz
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
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MXHV9910BTR MXHV9910BTR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED884E51E01529F2A18&compId=MXHV9910.pdf?ci_sign=ffd62dce3bffad03e2e18b014812ca4d02bc5561 Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; SO8
Topology: buck
Type of integrated circuit: driver
Mounting: SMD
Integrated circuit features: linear dimming; PWM
Kind of package: reel; tape
Case: SO8
Operating temperature: -40...85°C
Output current: 0.28A
Input voltage: 8...450V
Output voltage: 12V
Frequency: 64kHz
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Produkt ist nicht verfügbar
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IXTA08N50D2 IXTA08N50D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389DDEB1D445820&compId=IXTA(P%2CY)08N50D2.pdf?ci_sign=d92cfc0f9209a370f1a625c4b843304b6b0d742c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO263; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO263
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
Produkt ist nicht verfügbar
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IXTP08N50D2 IXTP08N50D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389DDEB1D445820&compId=IXTA(P%2CY)08N50D2.pdf?ci_sign=d92cfc0f9209a370f1a625c4b843304b6b0d742c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO220AB; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO220AB
On-state resistance: 4.6Ω
Mounting: THT
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
auf Bestellung 264 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.3 EUR
27+2.67 EUR
35+2.09 EUR
50+1.9 EUR
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IXTY08N50D2 IXTY08N50D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389DDEB1D445820&compId=IXTA(P%2CY)08N50D2.pdf?ci_sign=d92cfc0f9209a370f1a625c4b843304b6b0d742c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO252; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO252
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
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IXYH75N120B4 IXYS Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 1.2kV; 75A; 1.15kW; TO247,TO247-3
Type of transistor: IGBT
Technology: GenX4™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 1.15kW
Case: TO247; TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Turn-on time: 24ns
Turn-off time: 235ns
Produkt ist nicht verfügbar
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CPC2025N CPC2025N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49383A8BD80C7&compId=CPC2025N.pdf?ci_sign=68e0652c8b9ad4e6df71484331099d8df430468c Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Operating temperature: -40...85°C
On-state resistance: 30Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Case: SO8
Manufacturer series: OptoMOS
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50mA
Max. operating current: 120mA
auf Bestellung 64 Stücke:
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35+2.04 EUR
40+1.82 EUR
42+1.72 EUR
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CPC2025NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49383A8BD80C7&compId=CPC2025N.pdf?ci_sign=68e0652c8b9ad4e6df71484331099d8df430468c Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Operating temperature: -40...85°C
On-state resistance: 30Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Case: SO8
Manufacturer series: OptoMOS
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50mA
Max. operating current: 120mA
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IXKC15N60C5 IXYS Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; ISOPLUS220™; 390ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Produkt ist nicht verfügbar
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CLA100PD1200NA CLA100PD1200NA IXYS Littelfuse-Power-Semiconductors-CLA100PD1200NA-Datasheet?assetguid=3c99ebf3-0787-4f96-8215-5f6801302969 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 100A; SOT227B; Ufmax: 1.21V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 40/80mA
Threshold on-voltage: 0.83V
Max. forward voltage: 1.21V
Load current: 100A
Max. forward impulse current: 1.5kA
Max. load current: 150A
Kind of package: bulk
auf Bestellung 7 Stücke:
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2+40.57 EUR
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IXA20PG1200DHGLB IXA20PG1200DHGLB IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA72D372C388143&compId=IXA20PG1200DHGLB.pdf?ci_sign=92f5d9e5dd1ef2369a8aa01671aa29244ac7835a pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA7B6B514524143&compId=SMPD%20MOSFET%20and%20IGBTs_Product%20Brief.pdf?ci_sign=8939cb3b27982fb8078171d673d8402b08fb3dc3 Category: IGBT modules
Description: Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV
Collector current: 23A
Power dissipation: 130W
Case: SMPD-B
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
Technology: ISOPLUS™; Sonic FRD™
Electrical mounting: SMT
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6+12.13 EUR
7+10.64 EUR
10+10.37 EUR
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CPC1135N CPC1135N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF20E20C7&compId=CPC1135N.pdf?ci_sign=4a18a2dbc91e1ae370bd5a8a3cd54dcab1a8fe21 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 5 Stücke:
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CPC1968J CPC1968J IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA92FB94A0B59FE0C4&compId=CPC1968.pdf?ci_sign=160af4d4d6569d9dbcf0943ab2d83726dac949bb Category: DC Solid State Relays
Description: Relay: solid state; Ucntrl: 0.9÷1.56VDC; 5A; max.500VDC; THT; 350mΩ
Type of relay: solid state
Control voltage: 0.9...1.56V DC
Control current: 10mA
Max. operating current: 5A
Switched voltage: max. 500V DC
Relay variant: Photo MOSFET
On-state resistance: 0.35Ω
Mounting: THT
Operate time: 4.6ms
Release time: 0.07ms
Operating temperature: -40...85°C
Body dimensions: 26.2x20x5mm
Control current max.: 100mA
auf Bestellung 115 Stücke:
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50+24.05 EUR
100+23.44 EUR
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IXGR24N120C3D1 IXGR24N120C3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAC6F05F14E3820&compId=IXGR24N120C3D1.pdf?ci_sign=af08643f59ea5edc5b65e80d47d0185b2b6c112f Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 200W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 200W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 430ns
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IXGR55N120A3H1 IXGR55N120A3H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAD491737D79820&compId=IXGR55N120A3H1.pdf?ci_sign=8ff4a90dc5b497cce2442de4bf97526e3dcdb303 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 200W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 200W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 330A
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Turn-on time: 70ns
Turn-off time: 1253ns
Produkt ist nicht verfügbar
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IXGR6N170A IXGR6N170A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAE50C49C1F3820&compId=IXGR6N170A.pdf?ci_sign=8948416bce328945a3a4ac2809f5d3317343395b Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 2.5A; 50W; PLUS247™
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 2.5A
Power dissipation: 50W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: THT
Gate charge: 18.5nC
Kind of package: tube
Turn-on time: 91ns
Turn-off time: 271ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
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IXTX90N25L2 IXTX90N25L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D374EE5CD85820&compId=IXTK(X)90N25L2.pdf?ci_sign=80bf7e49eeeb244aa8728ba401ffec2fb39f8e28 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 90A; 960W; PLUS247™; 266ns
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 90A
Gate charge: 640nC
Reverse recovery time: 266ns
On-state resistance: 36mΩ
Kind of channel: enhancement
Power dissipation: 960W
Features of semiconductor devices: linear power mosfet
Type of transistor: N-MOSFET
Case: PLUS247™
Produkt ist nicht verfügbar
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IXTX90P20P IXTX90P20P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9ECBA42874F8BF&compId=IXT_90P20P.pdf?ci_sign=51c0ccf646b8ee88bb3b4a442efcdd134c7b9d0f Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; 315ns
Drain-source voltage: -200V
Drain current: -90A
Reverse recovery time: 315ns
Gate charge: 205nC
On-state resistance: 44mΩ
Power dissipation: 890W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Case: PLUS247™
Type of transistor: P-MOSFET
Mounting: THT
Technology: PolarP™
Kind of package: tube
auf Bestellung 138 Stücke:
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4+19.36 EUR
5+17.96 EUR
10+17.42 EUR
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MCD26-08IO1B MCD26-08IO1B IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFCCD2F11B1C0C4&compId=MCD26-08io1B.pdf?ci_sign=9a6942d374cdf75d8a1ab1d84902414ef95e38c5 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 27A; TO240AA; Ufmax: 1.27V; bulk
Max. off-state voltage: 0.8kV
Load current: 27A
Max. forward impulse current: 520A
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.27V
Gate current: 100/200mA
Threshold on-voltage: 0.85V
Max. load current: 42A
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
auf Bestellung 2 Stücke:
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MCD56-08IO1B MCD56-08IO1B IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFF1B629813A0C4&compId=MCD56-08io1B.pdf?ci_sign=821060ef1b8511e1aedf945e2c2f1ad91acdf64e pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 60A; TO240AA; Ufmax: 1.24V; bulk
Max. off-state voltage: 0.8kV
Load current: 60A
Max. forward impulse current: 1.5kA
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.24V
Gate current: 100/200mA
Threshold on-voltage: 0.85V
Max. load current: 100A
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
3+31.15 EUR
10+28.06 EUR
Mindestbestellmenge: 3
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MCD26-12IO1B MCD26-12IO1B IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED997E95549EA455820&compId=MCD26-12io1B.pdf?ci_sign=4127869398e286376682561c16b0525127e15c21 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 27A; TO240AA; Ufmax: 1.27V; bulk
Max. off-state voltage: 1.2kV
Load current: 27A
Max. forward impulse current: 0.44kA
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.27V
Gate current: 100/200mA
Threshold on-voltage: 0.85V
Max. load current: 42A
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
3+24.25 EUR
10+22.54 EUR
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IXTP150N15X4 IXTP150N15X4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2893A5E251C9820&compId=IXTH(P)150N15X4.pdf?ci_sign=e12fd6602b056817d889d35f60740c06e4058b1c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 150A; 480W; TO220AB; 100ns
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Type of transistor: N-MOSFET
Case: TO220AB
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 105nC
Reverse recovery time: 100ns
On-state resistance: 7.2mΩ
Power dissipation: 480W
Drain current: 150A
Drain-source voltage: 150V
auf Bestellung 289 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.44 EUR
8+9.44 EUR
10+7.74 EUR
25+6.61 EUR
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IXTQ150N15P IXTQ150N15P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF917F39DF4CDE27&compId=IXTK150N15P-DTE.pdf?ci_sign=c9c97c1328cecc3554885e3cfd29e98d52e29bb2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 150A; 714W; TO3P
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO3P
Technology: PolarHT™
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 0.19µC
Reverse recovery time: 150ns
On-state resistance: 13mΩ
Power dissipation: 714W
Drain current: 150A
Gate-source voltage: ±20V
Drain-source voltage: 150V
auf Bestellung 1 Stücke:
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IXTA3N150HV IXTA3N150HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B916E9820&compId=IXTA3N150HV.pdf?ci_sign=dad1621cba0475c0d32363ea748872e5286105f5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO263; 900ns
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Type of transistor: N-MOSFET
Case: TO263
Kind of package: tube
Mounting: SMD
Polarisation: unipolar
Gate charge: 38.6nC
Reverse recovery time: 900ns
Power dissipation: 250W
Drain current: 3A
Drain-source voltage: 1.5kV
auf Bestellung 64 Stücke:
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8+9.09 EUR
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IXTQ3N150M IXTQ3N150M IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A284803F9A26F820&compId=IXTQ3N150M.pdf?ci_sign=c567fa7384752102128d132316a07a52fc6dca9f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 1.83A; Idm: 9A; 73W; TO3PF
Case: TO3PF
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Gate charge: 38.6nC
Reverse recovery time: 900ns
On-state resistance: 7.3Ω
Drain current: 1.83A
Pulsed drain current: 9A
Gate-source voltage: ±30V
Power dissipation: 73W
Drain-source voltage: 1.5kV
Kind of channel: enhancement
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IXFP10N60P IXFP10N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A3172A28B93820&compId=IXFA(P)10N60P.pdf?ci_sign=de7479bbe4bb559868fc81e62408fc15628ae2c2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 120ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.74Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 32nC
Reverse recovery time: 120ns
auf Bestellung 61 Stücke:
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21+3.49 EUR
23+3.13 EUR
26+2.77 EUR
50+2.5 EUR
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IXTP10N60P IXTP10N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F12F7820&compId=IXTP10N60P.pdf?ci_sign=c8a5cd7138ab74dee443f89a317f173a43bfad11 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.74Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Gate charge: 32nC
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
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IXFN110N60P3 IXFN110N60P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C7EC3367918BF&compId=IXFN110N60P3.pdf?ci_sign=d0968e82a80d72ea8c08fc609d26ee5426b318be Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 90A; SOT227B; screw; Idm: 275A
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 90A
Power dissipation: 1.5kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 56mΩ
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Gate charge: 254nC
Reverse recovery time: 250ns
Pulsed drain current: 275A
Produkt ist nicht verfügbar
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IXFA10N60P IXFA10N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A3172A28B93820&compId=IXFA(P)10N60P.pdf?ci_sign=de7479bbe4bb559868fc81e62408fc15628ae2c2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 10A; 200W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO263
On-state resistance: 0.74Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 32nC
Reverse recovery time: 120ns
Produkt ist nicht verfügbar
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IXFB110N60P3 IXFB110N60P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED44AB02F76EA18&compId=IXFB110N60P3.pdf?ci_sign=0293312a91129e825963c35231f446f72a37e881 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 110A; 1890W; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 110A
Power dissipation: 1890W
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 56mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 254nC
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
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CPC9909NTR CPC9909NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B99E5E3B381720C4&compId=CPC9909.pdf?ci_sign=99720f99afc63d595fda352ab7d36cb05b5ec36a Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CPC9909N CPC9909N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B99E5E3B381720C4&compId=CPC9909.pdf?ci_sign=99720f99afc63d595fda352ab7d36cb05b5ec36a Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 2mA
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Mounting: SMD
Operating temperature: -55...85°C
Kind of package: tube
Integrated circuit features: linear dimming; PWM
Output current: 2mA
Input voltage: 8...550V
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.78 EUR
24+3.07 EUR
27+2.67 EUR
33+2.19 EUR
50+1.89 EUR
100+1.72 EUR
Mindestbestellmenge: 19
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CPC9909NE CPC9909NE IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B99E5E3B381720C4&compId=CPC9909.pdf?ci_sign=99720f99afc63d595fda352ab7d36cb05b5ec36a Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8-EP
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8-EP
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: tube
auf Bestellung 1016 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.42 EUR
34+2.13 EUR
40+1.82 EUR
50+1.73 EUR
Mindestbestellmenge: 21
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CPC9909NETR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B99E5E3B381720C4&compId=CPC9909.pdf?ci_sign=99720f99afc63d595fda352ab7d36cb05b5ec36a Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8-EP
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8-EP
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IXFR102N30P IXFR102N30P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6A9B820&compId=IXFR102N30P.pdf?ci_sign=67b3ad18f9a19046de4d38e27866ae8ae91d5664 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 60A; 250W; ISOPLUS247™
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 224nC
On-state resistance: 36mΩ
Drain current: 60A
Power dissipation: 250W
Drain-source voltage: 300V
Kind of package: tube
Case: ISOPLUS247™
Kind of channel: enhancement
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
4+19.63 EUR
5+17.49 EUR
10+15.86 EUR
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IXFN44N80P IXFN44N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C9A3C8EBA98BF&compId=IXFN44N80P.pdf?ci_sign=e5454b9129ad828efae0eebe210c810d51dfce0d description Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 39A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 39A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.19Ω
Pulsed drain current: 100A
Power dissipation: 694W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 250ns
Gate charge: 200nC
Kind of channel: enhancement
auf Bestellung 7 Stücke:
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2+43.41 EUR
3+38.38 EUR
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IXFN44N80Q3 IXFN44N80Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF9F937B909F820&compId=IXFN44N80Q3.pdf?ci_sign=fd80aa4819d75a8d19acc0bc3f82bfef6bd57b62 Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 37A; SOT227B; screw; Idm: 130A
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 37A
Pulsed drain current: 130A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.19Ω
Gate charge: 185nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXTP60N10T IXTP60N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D49165695D1820&compId=IXTA(P)60N10T.pdf?ci_sign=92e4c232650cb3131af7dac4c451a83cc9058951 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO220AB; 59ns
Mounting: THT
Kind of package: tube
Case: TO220AB
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Gate charge: 49nC
Reverse recovery time: 59ns
On-state resistance: 18mΩ
Power dissipation: 176W
Kind of channel: enhancement
Type of transistor: N-MOSFET
auf Bestellung 286 Stücke:
Lieferzeit 14-21 Tag (e)
28+2.57 EUR
33+2.22 EUR
40+1.82 EUR
50+1.63 EUR
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IXFN360N10T IXFN360N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C5891EC71D8BF&compId=IXFN360N10T.pdf?ci_sign=f49be72713bf6a9d89a1f56881e5f6829ccb1185 Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 360A; SOT227B; screw; Idm: 900A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 360A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 2.6mΩ
Pulsed drain current: 900A
Power dissipation: 830W
Technology: GigaMOS™; HiPerFET™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 130ns
Gate charge: 525nC
Kind of channel: enhancement
auf Bestellung 193 Stücke:
Lieferzeit 14-21 Tag (e)
3+30.04 EUR
5+25.54 EUR
10+24.74 EUR
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IXTP160N10T IXTP160N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE993DC32F0A59E98BF&compId=IXT_160N10T.pdf?ci_sign=4e0d41f291e819e28cb8f258dae732c56a617f1b Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 100V; 160A; 430W; TO220AB
Mounting: THT
Kind of package: tube
Case: TO220AB
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 160A
Gate charge: 132nC
Reverse recovery time: 60ns
On-state resistance: 7mΩ
Power dissipation: 430W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: Trench™
auf Bestellung 264 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.78 EUR
16+4.73 EUR
50+4.2 EUR
100+3.96 EUR
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IXFN44N100Q3 IXFN44N100Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA77628F9891820&compId=IXFN44N100Q3.pdf?ci_sign=50013891e5e63e84eaa5c1c71ffceb0e2e5badb1 Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 38A; SOT227B; screw; Idm: 110A; 960W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 38A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.22Ω
Pulsed drain current: 110A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 300ns
Gate charge: 264nC
Kind of channel: enhancement
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
1+96 EUR
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DSA1-12D DSA1-12D IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BA82836F916CE143&compId=DSA1-18D.pdf?ci_sign=452a5902ddb9885d20bbcd189749dd424e83331a Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 2.3A; tube; Ifsm: 110A; FP-Case
Load current: 2.3A
Max. forward impulse current: 110A
Max. off-state voltage: 1.2kV
Mounting: THT
Case: FP-Case
Type of diode: rectifying
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Kind of package: tube
Max. forward voltage: 1.34V
auf Bestellung 64 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.26 EUR
19+3.95 EUR
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IXGA48N60A3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE53B33B1DDB820&compId=IXGA(P%2CH)48N60A3.pdf?ci_sign=3de66c7eadd74b16b8875cd3a050200178617cff
IXGA48N60A3
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO263
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Turn-off time: 925ns
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 300A
Collector-emitter voltage: 600V
Turn-on time: 54ns
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.82 EUR
14+5.22 EUR
16+4.62 EUR
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IXGH48N60B3C1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B381E6C0878A5E28&compId=IXGH48N60B3C1-DTE.pdf?ci_sign=721837839cfff5b1fb45e8394d3190c2f5f5cb01
IXGH48N60B3C1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Turn-off time: 347ns
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 280A
Collector-emitter voltage: 600V
Turn-on time: 48ns
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.63 EUR
Mindestbestellmenge: 4
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IXGH48N60B3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BF95DB9A0A17820&compId=IXGH48N60B3D1.pdf?ci_sign=b88ef15e046b033bedf0667f01dda5696c066ffb
IXGH48N60B3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Turn-off time: 347ns
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 280A
Collector-emitter voltage: 600V
Turn-on time: 44ns
auf Bestellung 270 Stücke:
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Anzahl Preis
8+9.4 EUR
30+7.95 EUR
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IXGH48N60C3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFA3ABB7C7C7820&compId=IXGH48N60C3D1.pdf?ci_sign=9e8b41e0496f7b4552d6efd4bbf0620554365264
IXGH48N60C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Turn-off time: 187ns
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 250A
Collector-emitter voltage: 600V
Turn-on time: 45ns
auf Bestellung 202 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.58 EUR
8+9.84 EUR
10+8.75 EUR
30+7.56 EUR
Mindestbestellmenge: 7
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CPC1117N pVersion=0046&contRep=ZT&docId=005056AB82531EE995A38CFB799FD8BF&compId=cpc1117n.pdf?ci_sign=42c5ed3862d631ccfa4f4ee18df640d714bcd8ff
CPC1117N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 150mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 861 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
47+1.54 EUR
52+1.4 EUR
100+1.33 EUR
300+1.19 EUR
Mindestbestellmenge: 47
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MMO62-12IO6 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B8F478DC2F5F9E28&compId=MMo62-12io6-DTE.pdf?ci_sign=10ad4c18982c2d0b7cdd649068aaadc5dde3b16c
MMO62-12IO6
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 30A; SOT227B; Ufmax: 1.29V
Type of semiconductor module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.2kV
Load current: 30A
Case: SOT227B
Max. forward voltage: 1.29V
Max. forward impulse current: 0.4kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 100mA
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+30.97 EUR
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DSP8-12A pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF09019D31818BF&compId=DSP8-12A.pdf?ci_sign=4c1df90e7f9f491684d5e61712aacbe284a80828
DSP8-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 100A; TO220AB; 100W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: TO220AB
Max. forward voltage: 1.08V
Max. forward impulse current: 100A
Power dissipation: 100W
Kind of package: tube
auf Bestellung 6 Stücke:
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Anzahl Preis
6+11.91 EUR
Mindestbestellmenge: 6
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DSP8-12AS-TRL pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC4740C124560C4&compId=DSP8-12AS.pdf?ci_sign=c7e88fe8621910a4bd9800ab0ed9988bac77f308
DSP8-12AS-TRL
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120kA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Max. forward voltage: 1.08V
Max. forward impulse current: 120kA
Power dissipation: 100W
Kind of package: reel; tape
auf Bestellung 792 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.37 EUR
24+3 EUR
27+2.73 EUR
Mindestbestellmenge: 22
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DSP8-12AS-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC4740C124560C4&compId=DSP8-12AS.pdf?ci_sign=c7e88fe8621910a4bd9800ab0ed9988bac77f308
DSP8-12AS-TUB
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Max. forward voltage: 1.08V
Max. forward impulse current: 120A
Power dissipation: 100W
Kind of package: tube
Produkt ist nicht verfügbar
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CPC1945Y pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4384923AE38BF&compId=CPC1945Y.pdf?ci_sign=a1bb4db4c3f93e15666e949682f73ba24088c71a
CPC1945Y
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.120VAC; OptoMOS
Type of relay: solid state
Max. operating current: 1A
Switched voltage: max. 120V AC
Manufacturer series: OptoMOS
Relay variant: 1-phase
On-state resistance: 0.34Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Switching method: zero voltage switching
Turn-on time: 5ms
Turn-off time: 3ms
Body dimensions: 19.2x6.35x3.3mm
Control current max.: 100mA
Insulation voltage: 3.75kV
Kind of output: MOSFET
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.7 EUR
22+3.36 EUR
25+2.93 EUR
75+2.32 EUR
Mindestbestellmenge: 20
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IXFH24N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCB94722F39820&compId=IXFH(K%2CT)24N80P.pdf?ci_sign=de1ae4e3915cc5ae12d6efcc3663703594898c91
IXFH24N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFK24N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCB94722F39820&compId=IXFH(K%2CT)24N80P.pdf?ci_sign=de1ae4e3915cc5ae12d6efcc3663703594898c91
IXFK24N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO264
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
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IXFK27N80Q pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC5E93D821F820&compId=IXFK(X)27N80Q.pdf?ci_sign=8daef21b45c2446e7f867bb9111fde52758b8bbd
IXFK27N80Q
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Power dissipation: 481W
Case: TO264
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFK34N80 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC5531C0BEB820&compId=IXFK(X)34N80.pdf?ci_sign=c21449cd8db7a186cc87835ff14b3420826840c0
IXFK34N80
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Power dissipation: 568W
Case: TO264
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFK44N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D55A88536A9820&compId=IXFK(X)44N80P.pdf?ci_sign=fe7a22c35d7909b220aeebf7fe0c0b6a1d419d2d
IXFK44N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 255 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+21.04 EUR
5+20.06 EUR
10+18.9 EUR
Mindestbestellmenge: 4
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IXFK44N80Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D555DA4D32F820&compId=IXFK(X)44N80Q3.pdf?ci_sign=dd049728423ed64df76c419a8fd12eba8ab2dd10
IXFK44N80Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+19.32 EUR
Mindestbestellmenge: 4
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MXHV9910B pVersion=0046&contRep=ZT&docId=005056AB752F1ED884E51E01529F2A18&compId=MXHV9910.pdf?ci_sign=ffd62dce3bffad03e2e18b014812ca4d02bc5561
MXHV9910B
Hersteller: IXYS
Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; SO8
Topology: buck
Type of integrated circuit: driver
Mounting: SMD
Integrated circuit features: linear dimming; PWM
Kind of package: tube
Case: SO8
Operating temperature: -40...85°C
Output current: 0.28A
Input voltage: 8...450V
Output voltage: 12V
Frequency: 64kHz
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Produkt ist nicht verfügbar
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MXHV9910BE pVersion=0046&contRep=ZT&docId=005056AB752F1ED884E51E01529F2A18&compId=MXHV9910.pdf?ci_sign=ffd62dce3bffad03e2e18b014812ca4d02bc5561
Hersteller: IXYS
Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; 12V
Topology: buck
Type of integrated circuit: driver
Mounting: SMD
Integrated circuit features: linear dimming; PWM
Kind of package: tube
Case: SO8-EP
Operating temperature: -40...85°C
Output current: 0.28A
Input voltage: 8...450V
Output voltage: 12V
Frequency: 64kHz
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Produkt ist nicht verfügbar
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MXHV9910BETR pVersion=0046&contRep=ZT&docId=005056AB752F1ED884E51E01529F2A18&compId=MXHV9910.pdf?ci_sign=ffd62dce3bffad03e2e18b014812ca4d02bc5561
Hersteller: IXYS
Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; 12V
Topology: buck
Type of integrated circuit: driver
Mounting: SMD
Integrated circuit features: linear dimming; PWM
Kind of package: reel; tape
Case: SO8-EP
Operating temperature: -40...85°C
Output current: 0.28A
Input voltage: 8...450V
Output voltage: 12V
Frequency: 64kHz
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Produkt ist nicht verfügbar
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MXHV9910BTR pVersion=0046&contRep=ZT&docId=005056AB752F1ED884E51E01529F2A18&compId=MXHV9910.pdf?ci_sign=ffd62dce3bffad03e2e18b014812ca4d02bc5561
MXHV9910BTR
Hersteller: IXYS
Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; SO8
Topology: buck
Type of integrated circuit: driver
Mounting: SMD
Integrated circuit features: linear dimming; PWM
Kind of package: reel; tape
Case: SO8
Operating temperature: -40...85°C
Output current: 0.28A
Input voltage: 8...450V
Output voltage: 12V
Frequency: 64kHz
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Produkt ist nicht verfügbar
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IXTA08N50D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389DDEB1D445820&compId=IXTA(P%2CY)08N50D2.pdf?ci_sign=d92cfc0f9209a370f1a625c4b843304b6b0d742c
IXTA08N50D2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO263; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO263
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTP08N50D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389DDEB1D445820&compId=IXTA(P%2CY)08N50D2.pdf?ci_sign=d92cfc0f9209a370f1a625c4b843304b6b0d742c
IXTP08N50D2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO220AB; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO220AB
On-state resistance: 4.6Ω
Mounting: THT
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
auf Bestellung 264 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.3 EUR
27+2.67 EUR
35+2.09 EUR
50+1.9 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
IXTY08N50D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389DDEB1D445820&compId=IXTA(P%2CY)08N50D2.pdf?ci_sign=d92cfc0f9209a370f1a625c4b843304b6b0d742c
IXTY08N50D2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO252; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO252
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
Produkt ist nicht verfügbar
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IXYH75N120B4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 1.2kV; 75A; 1.15kW; TO247,TO247-3
Type of transistor: IGBT
Technology: GenX4™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 1.15kW
Case: TO247; TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Turn-on time: 24ns
Turn-off time: 235ns
Produkt ist nicht verfügbar
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CPC2025N pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49383A8BD80C7&compId=CPC2025N.pdf?ci_sign=68e0652c8b9ad4e6df71484331099d8df430468c
CPC2025N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Operating temperature: -40...85°C
On-state resistance: 30Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Case: SO8
Manufacturer series: OptoMOS
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50mA
Max. operating current: 120mA
auf Bestellung 64 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.04 EUR
40+1.82 EUR
42+1.72 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
CPC2025NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49383A8BD80C7&compId=CPC2025N.pdf?ci_sign=68e0652c8b9ad4e6df71484331099d8df430468c
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Operating temperature: -40...85°C
On-state resistance: 30Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Case: SO8
Manufacturer series: OptoMOS
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50mA
Max. operating current: 120mA
Produkt ist nicht verfügbar
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IXKC15N60C5
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; ISOPLUS220™; 390ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Produkt ist nicht verfügbar
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CLA100PD1200NA Littelfuse-Power-Semiconductors-CLA100PD1200NA-Datasheet?assetguid=3c99ebf3-0787-4f96-8215-5f6801302969
CLA100PD1200NA
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 100A; SOT227B; Ufmax: 1.21V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 40/80mA
Threshold on-voltage: 0.83V
Max. forward voltage: 1.21V
Load current: 100A
Max. forward impulse current: 1.5kA
Max. load current: 150A
Kind of package: bulk
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+40.57 EUR
Mindestbestellmenge: 2
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IXA20PG1200DHGLB pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA72D372C388143&compId=IXA20PG1200DHGLB.pdf?ci_sign=92f5d9e5dd1ef2369a8aa01671aa29244ac7835a pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA7B6B514524143&compId=SMPD%20MOSFET%20and%20IGBTs_Product%20Brief.pdf?ci_sign=8939cb3b27982fb8078171d673d8402b08fb3dc3
IXA20PG1200DHGLB
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV
Collector current: 23A
Power dissipation: 130W
Case: SMPD-B
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
Technology: ISOPLUS™; Sonic FRD™
Electrical mounting: SMT
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.13 EUR
7+10.64 EUR
10+10.37 EUR
Mindestbestellmenge: 6
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CPC1135N pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF20E20C7&compId=CPC1135N.pdf?ci_sign=4a18a2dbc91e1ae370bd5a8a3cd54dcab1a8fe21
CPC1135N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.3 EUR
Mindestbestellmenge: 5
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CPC1968J pVersion=0046&contRep=ZT&docId=005056AB90B41EDA92FB94A0B59FE0C4&compId=CPC1968.pdf?ci_sign=160af4d4d6569d9dbcf0943ab2d83726dac949bb
CPC1968J
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; Ucntrl: 0.9÷1.56VDC; 5A; max.500VDC; THT; 350mΩ
Type of relay: solid state
Control voltage: 0.9...1.56V DC
Control current: 10mA
Max. operating current: 5A
Switched voltage: max. 500V DC
Relay variant: Photo MOSFET
On-state resistance: 0.35Ω
Mounting: THT
Operate time: 4.6ms
Release time: 0.07ms
Operating temperature: -40...85°C
Body dimensions: 26.2x20x5mm
Control current max.: 100mA
auf Bestellung 115 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+26.01 EUR
50+24.05 EUR
100+23.44 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IXGR24N120C3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAC6F05F14E3820&compId=IXGR24N120C3D1.pdf?ci_sign=af08643f59ea5edc5b65e80d47d0185b2b6c112f
IXGR24N120C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 200W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 200W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 430ns
Produkt ist nicht verfügbar
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IXGR55N120A3H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAD491737D79820&compId=IXGR55N120A3H1.pdf?ci_sign=8ff4a90dc5b497cce2442de4bf97526e3dcdb303
IXGR55N120A3H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 200W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 200W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 330A
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Turn-on time: 70ns
Turn-off time: 1253ns
Produkt ist nicht verfügbar
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IXGR6N170A pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAE50C49C1F3820&compId=IXGR6N170A.pdf?ci_sign=8948416bce328945a3a4ac2809f5d3317343395b
IXGR6N170A
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 2.5A; 50W; PLUS247™
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 2.5A
Power dissipation: 50W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: THT
Gate charge: 18.5nC
Kind of package: tube
Turn-on time: 91ns
Turn-off time: 271ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
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IXTX90N25L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D374EE5CD85820&compId=IXTK(X)90N25L2.pdf?ci_sign=80bf7e49eeeb244aa8728ba401ffec2fb39f8e28
IXTX90N25L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 90A; 960W; PLUS247™; 266ns
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 90A
Gate charge: 640nC
Reverse recovery time: 266ns
On-state resistance: 36mΩ
Kind of channel: enhancement
Power dissipation: 960W
Features of semiconductor devices: linear power mosfet
Type of transistor: N-MOSFET
Case: PLUS247™
Produkt ist nicht verfügbar
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IXTX90P20P pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9ECBA42874F8BF&compId=IXT_90P20P.pdf?ci_sign=51c0ccf646b8ee88bb3b4a442efcdd134c7b9d0f
IXTX90P20P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; 315ns
Drain-source voltage: -200V
Drain current: -90A
Reverse recovery time: 315ns
Gate charge: 205nC
On-state resistance: 44mΩ
Power dissipation: 890W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Case: PLUS247™
Type of transistor: P-MOSFET
Mounting: THT
Technology: PolarP™
Kind of package: tube
auf Bestellung 138 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+19.36 EUR
5+17.96 EUR
10+17.42 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
MCD26-08IO1B pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFCCD2F11B1C0C4&compId=MCD26-08io1B.pdf?ci_sign=9a6942d374cdf75d8a1ab1d84902414ef95e38c5 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9
MCD26-08IO1B
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 27A; TO240AA; Ufmax: 1.27V; bulk
Max. off-state voltage: 0.8kV
Load current: 27A
Max. forward impulse current: 520A
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.27V
Gate current: 100/200mA
Threshold on-voltage: 0.85V
Max. load current: 42A
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
MCD56-08IO1B pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFF1B629813A0C4&compId=MCD56-08io1B.pdf?ci_sign=821060ef1b8511e1aedf945e2c2f1ad91acdf64e pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
MCD56-08IO1B
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 60A; TO240AA; Ufmax: 1.24V; bulk
Max. off-state voltage: 0.8kV
Load current: 60A
Max. forward impulse current: 1.5kA
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.24V
Gate current: 100/200mA
Threshold on-voltage: 0.85V
Max. load current: 100A
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+31.15 EUR
10+28.06 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
MCD26-12IO1B pVersion=0046&contRep=ZT&docId=005056AB82531ED997E95549EA455820&compId=MCD26-12io1B.pdf?ci_sign=4127869398e286376682561c16b0525127e15c21 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9
MCD26-12IO1B
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 27A; TO240AA; Ufmax: 1.27V; bulk
Max. off-state voltage: 1.2kV
Load current: 27A
Max. forward impulse current: 0.44kA
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.27V
Gate current: 100/200mA
Threshold on-voltage: 0.85V
Max. load current: 42A
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+24.25 EUR
10+22.54 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IXTP150N15X4 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2893A5E251C9820&compId=IXTH(P)150N15X4.pdf?ci_sign=e12fd6602b056817d889d35f60740c06e4058b1c
IXTP150N15X4
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 150A; 480W; TO220AB; 100ns
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Type of transistor: N-MOSFET
Case: TO220AB
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 105nC
Reverse recovery time: 100ns
On-state resistance: 7.2mΩ
Power dissipation: 480W
Drain current: 150A
Drain-source voltage: 150V
auf Bestellung 289 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.44 EUR
8+9.44 EUR
10+7.74 EUR
25+6.61 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXTQ150N15P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF917F39DF4CDE27&compId=IXTK150N15P-DTE.pdf?ci_sign=c9c97c1328cecc3554885e3cfd29e98d52e29bb2
IXTQ150N15P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 150A; 714W; TO3P
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO3P
Technology: PolarHT™
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 0.19µC
Reverse recovery time: 150ns
On-state resistance: 13mΩ
Power dissipation: 714W
Drain current: 150A
Gate-source voltage: ±20V
Drain-source voltage: 150V
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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IXTA3N150HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B916E9820&compId=IXTA3N150HV.pdf?ci_sign=dad1621cba0475c0d32363ea748872e5286105f5
IXTA3N150HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO263; 900ns
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Type of transistor: N-MOSFET
Case: TO263
Kind of package: tube
Mounting: SMD
Polarisation: unipolar
Gate charge: 38.6nC
Reverse recovery time: 900ns
Power dissipation: 250W
Drain current: 3A
Drain-source voltage: 1.5kV
auf Bestellung 64 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.09 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IXTQ3N150M pVersion=0046&contRep=ZT&docId=005056AB82531ED9A284803F9A26F820&compId=IXTQ3N150M.pdf?ci_sign=c567fa7384752102128d132316a07a52fc6dca9f
IXTQ3N150M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 1.83A; Idm: 9A; 73W; TO3PF
Case: TO3PF
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Gate charge: 38.6nC
Reverse recovery time: 900ns
On-state resistance: 7.3Ω
Drain current: 1.83A
Pulsed drain current: 9A
Gate-source voltage: ±30V
Power dissipation: 73W
Drain-source voltage: 1.5kV
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFP10N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A3172A28B93820&compId=IXFA(P)10N60P.pdf?ci_sign=de7479bbe4bb559868fc81e62408fc15628ae2c2
IXFP10N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 120ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.74Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 32nC
Reverse recovery time: 120ns
auf Bestellung 61 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.49 EUR
23+3.13 EUR
26+2.77 EUR
50+2.5 EUR
Mindestbestellmenge: 21
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IXTP10N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F12F7820&compId=IXTP10N60P.pdf?ci_sign=c8a5cd7138ab74dee443f89a317f173a43bfad11
IXTP10N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.74Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Gate charge: 32nC
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN110N60P3 pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C7EC3367918BF&compId=IXFN110N60P3.pdf?ci_sign=d0968e82a80d72ea8c08fc609d26ee5426b318be
IXFN110N60P3
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 90A; SOT227B; screw; Idm: 275A
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 90A
Power dissipation: 1.5kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 56mΩ
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Gate charge: 254nC
Reverse recovery time: 250ns
Pulsed drain current: 275A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFA10N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A3172A28B93820&compId=IXFA(P)10N60P.pdf?ci_sign=de7479bbe4bb559868fc81e62408fc15628ae2c2
IXFA10N60P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 10A; 200W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO263
On-state resistance: 0.74Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 32nC
Reverse recovery time: 120ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFB110N60P3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED44AB02F76EA18&compId=IXFB110N60P3.pdf?ci_sign=0293312a91129e825963c35231f446f72a37e881
IXFB110N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 110A; 1890W; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 110A
Power dissipation: 1890W
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 56mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 254nC
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CPC9909NTR pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B99E5E3B381720C4&compId=CPC9909.pdf?ci_sign=99720f99afc63d595fda352ab7d36cb05b5ec36a
CPC9909NTR
Hersteller: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CPC9909N pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B99E5E3B381720C4&compId=CPC9909.pdf?ci_sign=99720f99afc63d595fda352ab7d36cb05b5ec36a
CPC9909N
Hersteller: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 2mA
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Mounting: SMD
Operating temperature: -55...85°C
Kind of package: tube
Integrated circuit features: linear dimming; PWM
Output current: 2mA
Input voltage: 8...550V
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.78 EUR
24+3.07 EUR
27+2.67 EUR
33+2.19 EUR
50+1.89 EUR
100+1.72 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
CPC9909NE pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B99E5E3B381720C4&compId=CPC9909.pdf?ci_sign=99720f99afc63d595fda352ab7d36cb05b5ec36a
CPC9909NE
Hersteller: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8-EP
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8-EP
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: tube
auf Bestellung 1016 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.42 EUR
34+2.13 EUR
40+1.82 EUR
50+1.73 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
CPC9909NETR pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B99E5E3B381720C4&compId=CPC9909.pdf?ci_sign=99720f99afc63d595fda352ab7d36cb05b5ec36a
Hersteller: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8-EP
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8-EP
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFR102N30P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6A9B820&compId=IXFR102N30P.pdf?ci_sign=67b3ad18f9a19046de4d38e27866ae8ae91d5664
IXFR102N30P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 60A; 250W; ISOPLUS247™
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 224nC
On-state resistance: 36mΩ
Drain current: 60A
Power dissipation: 250W
Drain-source voltage: 300V
Kind of package: tube
Case: ISOPLUS247™
Kind of channel: enhancement
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+19.63 EUR
5+17.49 EUR
10+15.86 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXFN44N80P description pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C9A3C8EBA98BF&compId=IXFN44N80P.pdf?ci_sign=e5454b9129ad828efae0eebe210c810d51dfce0d
IXFN44N80P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 39A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 39A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.19Ω
Pulsed drain current: 100A
Power dissipation: 694W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 250ns
Gate charge: 200nC
Kind of channel: enhancement
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+43.41 EUR
3+38.38 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXFN44N80Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF9F937B909F820&compId=IXFN44N80Q3.pdf?ci_sign=fd80aa4819d75a8d19acc0bc3f82bfef6bd57b62
IXFN44N80Q3
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 37A; SOT227B; screw; Idm: 130A
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 37A
Pulsed drain current: 130A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.19Ω
Gate charge: 185nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTP60N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D49165695D1820&compId=IXTA(P)60N10T.pdf?ci_sign=92e4c232650cb3131af7dac4c451a83cc9058951
IXTP60N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO220AB; 59ns
Mounting: THT
Kind of package: tube
Case: TO220AB
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Gate charge: 49nC
Reverse recovery time: 59ns
On-state resistance: 18mΩ
Power dissipation: 176W
Kind of channel: enhancement
Type of transistor: N-MOSFET
auf Bestellung 286 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.57 EUR
33+2.22 EUR
40+1.82 EUR
50+1.63 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
IXFN360N10T pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C5891EC71D8BF&compId=IXFN360N10T.pdf?ci_sign=f49be72713bf6a9d89a1f56881e5f6829ccb1185
IXFN360N10T
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 360A; SOT227B; screw; Idm: 900A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 360A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 2.6mΩ
Pulsed drain current: 900A
Power dissipation: 830W
Technology: GigaMOS™; HiPerFET™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 130ns
Gate charge: 525nC
Kind of channel: enhancement
auf Bestellung 193 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+30.04 EUR
5+25.54 EUR
10+24.74 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IXTP160N10T pVersion=0046&contRep=ZT&docId=005056AB82531EE993DC32F0A59E98BF&compId=IXT_160N10T.pdf?ci_sign=4e0d41f291e819e28cb8f258dae732c56a617f1b
IXTP160N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 100V; 160A; 430W; TO220AB
Mounting: THT
Kind of package: tube
Case: TO220AB
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 160A
Gate charge: 132nC
Reverse recovery time: 60ns
On-state resistance: 7mΩ
Power dissipation: 430W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: Trench™
auf Bestellung 264 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.78 EUR
16+4.73 EUR
50+4.2 EUR
100+3.96 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IXFN44N100Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA77628F9891820&compId=IXFN44N100Q3.pdf?ci_sign=50013891e5e63e84eaa5c1c71ffceb0e2e5badb1
IXFN44N100Q3
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 38A; SOT227B; screw; Idm: 110A; 960W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 38A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.22Ω
Pulsed drain current: 110A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 300ns
Gate charge: 264nC
Kind of channel: enhancement
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+96 EUR
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DSA1-12D pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BA82836F916CE143&compId=DSA1-18D.pdf?ci_sign=452a5902ddb9885d20bbcd189749dd424e83331a
DSA1-12D
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 2.3A; tube; Ifsm: 110A; FP-Case
Load current: 2.3A
Max. forward impulse current: 110A
Max. off-state voltage: 1.2kV
Mounting: THT
Case: FP-Case
Type of diode: rectifying
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Kind of package: tube
Max. forward voltage: 1.34V
auf Bestellung 64 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.26 EUR
19+3.95 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
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