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IXFN20N120P IXFN20N120P IXYS IXFN20N120P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 20A; SOT227B; screw; Idm: 50A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 20A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 570mΩ
Pulsed drain current: 50A
Power dissipation: 595W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 300ns
Gate charge: 193nC
Kind of channel: enhancement
auf Bestellung 17 Stücke:
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4+19.18 EUR
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IXFR20N120P IXFR20N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6B4B820&compId=IXFR20N120P.pdf?ci_sign=3ec4bae68a596108eefc3f91613f3b2a858b33a0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 13A; 290W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 13A
Power dissipation: 290W
Case: ISOPLUS247™
On-state resistance: 0.63Ω
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 30 Stücke:
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2+36.49 EUR
3+32.72 EUR
10+28.94 EUR
30+26.08 EUR
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IXFX20N120P IXFX20N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A92D5F7781F8BF&compId=IXF_20N120P.pdf?ci_sign=f8c33191702a2a0a34deabac8302d8b29e2cedba Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 20A; 780W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 20A
Power dissipation: 780W
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
auf Bestellung 1 Stücke:
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IXGH20N120A3 IXGH20N120A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A97D0BC12338BF&compId=IXG_20N120A3.pdf?ci_sign=81a9cfbab75e86f2646df4a6079a62ddaef02364 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 180W
Case: TO247-3
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 66ns
Turn-off time: 1.53µs
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
auf Bestellung 87 Stücke:
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30+6.41 EUR
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IXGP20N120A3 IXGP20N120A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A97D0BC12338BF&compId=IXG_20N120A3.pdf?ci_sign=81a9cfbab75e86f2646df4a6079a62ddaef02364 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220AB
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 180W
Case: TO220AB
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Collector-emitter voltage: 1.2kV
Turn-on time: 66ns
Gate charge: 50nC
Turn-off time: 1.53µs
auf Bestellung 26 Stücke:
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IXGP20N120B3 IXGP20N120B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DABBDF3F92A3820&compId=IXGA(P)20N120B3.pdf?ci_sign=693eed04e1173248dc559ce9f74a6894b0b31c5f Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 180W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Collector-emitter voltage: 1.2kV
Turn-on time: 61ns
Gate charge: 51nC
Turn-off time: 720ns
auf Bestellung 37 Stücke:
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IXYA20N120C3HV IXYA20N120C3HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE992CA262386AE78BF&compId=IXY_20N120C3_HV.pdf?ci_sign=69a66f2254c263ce93b6ce37d84ed69d8c442da0 Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO263-2
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 278W
Case: TO263-2
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 60ns
Turn-off time: 215ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
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IXYH20N120C3 IXYH20N120C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DABCDC0A34F5820&compId=IXYH(P)20N120C3_HV.pdf?ci_sign=30885aa545e063da4e84233ac795b9469a3a4fce Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 278W
Case: TO247-3
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 60ns
Turn-off time: 0.22µs
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
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IXYH20N120C3D1 IXYH20N120C3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE992C9991A201638BF&compId=IXYH20N120C3D1.pdf?ci_sign=e120799112c6baf937977feba949005fd83421df Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 60ns
Turn-off time: 0.22µs
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 88A
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10+9.87 EUR
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IXYJ20N120C3D1 IXYS IXYJ20N120C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 21A; 105W; TO247
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 105W
Case: TO247
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 20ns
Turn-off time: 90ns
Collector current: 21A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
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IXYP20N120C3 IXYP20N120C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DABCDC0A34F5820&compId=IXYH(P)20N120C3_HV.pdf?ci_sign=30885aa545e063da4e84233ac795b9469a3a4fce Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 278W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Collector-emitter voltage: 1.2kV
Turn-on time: 60ns
Gate charge: 53nC
Turn-off time: 200ns
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IXYT20N120C3D1HV IXYT20N120C3D1HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAC5027B64E7820&compId=IXYT20N120C3D1HV.pdf?ci_sign=919d7cd0b29220ac3b93c7617f2b3fdc9d073e25 Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 17A; 230W; TO268HV
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 230W
Case: TO268HV
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 60ns
Turn-off time: 0.22µs
Collector current: 17A
Gate-emitter voltage: ±20V
Pulsed collector current: 88A
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CPC1390GR CPC1390GR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A41EA29340F8BF&compId=cpc1390.pdf?ci_sign=4ed09f212104e2f97cb38f2c56316cc428366b9d Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 140mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 140mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP4
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 1ms
Operating temperature: -40...85°C
Kind of output: MOSFET
auf Bestellung 235 Stücke:
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26+2.77 EUR
31+2.33 EUR
100+2.14 EUR
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CPC1390GV CPC1390GV IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492320042C0C7&compId=CPC1390.pdf?ci_sign=02d27267f722e98ae1add0787a699a87ad053c38 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 140mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 140mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: THT
Case: DIP4
Operating temperature: -40...85°C
Turn-on time: 1ms
Turn-off time: 1ms
Body dimensions: 4.57x6.35x3.3mm
Control current max.: 50mA
Insulation voltage: 5kV
Kind of output: MOSFET
auf Bestellung 450 Stücke:
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20+3.59 EUR
100+2.36 EUR
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IXFH34N60X2A IXFH34N60X2A IXYS IXFH34N60X2A.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 600V; 34A; Idm: 68A; 540W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 34A
Pulsed drain current: 68A
Power dissipation: 540W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Application: automotive industry
Technology: HiPerFET™; X2-Class
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 164ns
auf Bestellung 2 Stücke:
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IXFK64N60Q3 IXFK64N60Q3 IXYS IXFK(X)64N60Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 64A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 17 Stücke:
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IXTP14N60X2 IXTP14N60X2 IXYS ixty2n65x2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 18A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 16.7nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 9 Stücke:
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IXXH30N60B3D1 IXXH30N60B3D1 IXYS IXXH30N60B3D1-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD
Type of transistor: IGBT
Power dissipation: 270W
Case: TO247AD
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Turn-on time: 23ns
Turn-off time: 125ns
Collector current: 30A
Pulsed collector current: 115A
Gate-emitter voltage: ±20V
auf Bestellung 40 Stücke:
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11+7.05 EUR
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IXXN110N65B4H1 IXXN110N65B4H1 IXYS IXXN110N65B4H1.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX4™; XPT™
Power dissipation: 750W
Case: SOT227B
Type of semiconductor module: IGBT
Collector current: 110A
Gate-emitter voltage: ±20V
Pulsed collector current: 650A
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
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IXXN110N65C4H1 IXXN110N65C4H1 IXYS IXXN110N65C4H1.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX3™; XPT™
Power dissipation: 750W
Case: SOT227B
Type of semiconductor module: IGBT
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Collector current: 110A
Gate-emitter voltage: ±20V
Pulsed collector current: 470A
Max. off-state voltage: 650V
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IXXR110N65B4H1 IXXR110N65B4H1 IXYS IXXR110N65B4H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 70A; 455W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 455W
Case: PLUS247™
Mounting: THT
Kind of package: tube
Collector current: 70A
Gate-emitter voltage: ±20V
Pulsed collector current: 490A
Collector-emitter voltage: 650V
Turn-off time: 250ns
Gate charge: 183nC
Turn-on time: 65ns
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IXXX110N65B4H1 IXXX110N65B4H1 IXYS IXX_110N65B4H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 880W
Case: PLUS247™
Mounting: THT
Kind of package: tube
Collector current: 110A
Gate-emitter voltage: ±20V
Pulsed collector current: 570A
Collector-emitter voltage: 650V
Turn-off time: 250ns
Gate charge: 183nC
Turn-on time: 65ns
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IXTH30N60P IXTH30N60P IXYS IXTH(Q,T,V)30N60P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 500ns
Mounting: THT
Case: TO247-3
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Gate charge: 82nC
Reverse recovery time: 0.5µs
On-state resistance: 0.24Ω
Power dissipation: 540W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
auf Bestellung 276 Stücke:
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7+11.05 EUR
10+9.19 EUR
30+8.54 EUR
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IXTQ30N60L2 IXTQ30N60L2 IXYS IXT_30N60L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO3P
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 710ns
Power dissipation: 540W
Features of semiconductor devices: linear power mosfet
Gate charge: 335nC
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IXTQ30N60P IXTQ30N60P IXYS IXTH(Q,T,V)30N60P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO3P
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Power dissipation: 540W
Features of semiconductor devices: standard power mosfet
Gate charge: 82nC
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IXTT30N60L2 IXTT30N60L2 IXYS IXT_30N60L2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 600V; 30A; 540W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 710ns
Power dissipation: 540W
Technology: Linear L2™
Gate charge: 335nC
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IXTT30N60P IXTT30N60P IXYS IXTH(Q,T,V)30N60P_S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO268
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Power dissipation: 540W
Features of semiconductor devices: standard power mosfet
Gate charge: 82nC
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IXXH30N60C3D1 IXXH30N60C3D1 IXYS IXXH30N60C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 270W
Pulsed collector current: 110A
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Turn-on time: 37ns
Gate charge: 37nC
Turn-off time: 166ns
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IXXQ30N60B3M IXXQ30N60B3M IXYS IXXQ30N60B3M.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 19A; 90W; TO3PF
Type of transistor: IGBT
Case: TO3PF
Mounting: THT
Kind of package: tube
Collector current: 19A
Gate-emitter voltage: ±20V
Power dissipation: 90W
Pulsed collector current: 140A
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Turn-on time: 57ns
Gate charge: 39nC
Turn-off time: 292ns
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IXFX55N50 IXFX55N50 IXYS IXFX50N50_IXFX55N50.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 55A; 520W; PLUS247™; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 55A
Power dissipation: 520W
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
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IXTA15N50L2 IXTA15N50L2 IXYS IXTA(H,P)15N50L2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO263; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.48Ω
Mounting: SMD
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 570ns
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IXTH15N50L2 IXTH15N50L2 IXYS IXTA(H,P)15N50L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO247-3; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 570ns
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IXTP15N50L2 IXTP15N50L2 IXYS IXTA(H,P)15N50L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO220AB; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 570ns
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IXFH100N25P IXFH100N25P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC009820&compId=IXFH100N25P.pdf?ci_sign=8543bb8bfc45a45bf095f4e45a85eebb13fb2f81 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 250V; 100A; 600W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 185nC
On-state resistance: 27mΩ
Drain current: 100A
Power dissipation: 600W
Drain-source voltage: 250V
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IXFH100N30X3 IXFH100N30X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBCDA1FA5458BF&compId=IXF_100N30X3_HV.pdf?ci_sign=291cad4ee4c338832090f6d9d224fee09028d26c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 100A; 48W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 100A
Power dissipation: 48W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 130ns
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IXXH100N60C3 IXXH100N60C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB4E5B26A23820&compId=IXXH100N60C3.pdf?ci_sign=d34a8167233d2e352f733d1eb503fd101039fa57 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3
Mounting: THT
Turn-off time: 0.22µs
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 380A
Collector-emitter voltage: 600V
Power dissipation: 830W
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Turn-on time: 95s
Gate charge: 150nC
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IXFK48N60P IXFK48N60P IXYS IXF_48N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 830W
Case: TO264
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
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IXGA48N60A3 IXGA48N60A3 IXYS IXGA(P,H)48N60A3.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO263
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 54ns
Turn-off time: 925ns
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 300A
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IXGH48N60B3C1 IXGH48N60B3C1 IXYS IXGH48N60B3C1-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 48ns
Turn-off time: 347ns
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 280A
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IXGH48N60B3D1 IXGH48N60B3D1 IXYS IXGH48N60B3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 44ns
Turn-off time: 347ns
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 280A
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IXGH48N60C3D1 IXGH48N60C3D1 IXYS IXGH48N60C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 45ns
Turn-off time: 187ns
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 250A
auf Bestellung 172 Stücke:
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8+9.84 EUR
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CPC1117N CPC1117N IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A38CFB799FD8BF&compId=cpc1117n.pdf?ci_sign=42c5ed3862d631ccfa4f4ee18df640d714bcd8ff Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 150mA; max.60VAC
Case: SOP4
On-state resistance: 16Ω
Turn-off time: 10ms
Turn-on time: 10ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 150mA
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Switched voltage: max. 60V AC; max. 60V DC
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MMO62-12IO6 MMO62-12IO6 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B8F478DC2F5F9E28&compId=MMo62-12io6-DTE.pdf?ci_sign=10ad4c18982c2d0b7cdd649068aaadc5dde3b16c Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 30A; SOT227B; Ufmax: 1.29V
Type of semiconductor module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.2kV
Load current: 30A
Case: SOT227B
Max. forward voltage: 1.29V
Max. forward impulse current: 0.4kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 100mA
auf Bestellung 71 Stücke:
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DSP8-12A DSP8-12A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF09019D31818BF&compId=DSP8-12A.pdf?ci_sign=4c1df90e7f9f491684d5e61712aacbe284a80828 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 100A; TO220AB; 100W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: TO220AB
Max. forward voltage: 1.08V
Max. forward impulse current: 100A
Power dissipation: 100W
Kind of package: tube
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DSP8-12AS-TRL DSP8-12AS-TRL IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC4740C124560C4&compId=DSP8-12AS.pdf?ci_sign=c7e88fe8621910a4bd9800ab0ed9988bac77f308 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120kA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Max. forward voltage: 1.08V
Max. forward impulse current: 120kA
Power dissipation: 100W
Kind of package: reel; tape
auf Bestellung 792 Stücke:
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DSP8-12AS-TUB DSP8-12AS-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC4740C124560C4&compId=DSP8-12AS.pdf?ci_sign=c7e88fe8621910a4bd9800ab0ed9988bac77f308 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Max. forward voltage: 1.08V
Max. forward impulse current: 120A
Power dissipation: 100W
Kind of package: tube
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CPC1945Y CPC1945Y IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4384923AE38BF&compId=CPC1945Y.pdf?ci_sign=a1bb4db4c3f93e15666e949682f73ba24088c71a Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.120VAC; OptoMOS
Type of relay: solid state
Max. operating current: 1A
Switched voltage: max. 120V AC
Manufacturer series: OptoMOS
Relay variant: 1-phase
On-state resistance: 0.34Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Switching method: zero voltage switching
Turn-on time: 5ms
Turn-off time: 3ms
Body dimensions: 19.2x6.35x3.3mm
Control current max.: 100mA
Insulation voltage: 3.75kV
Kind of output: MOSFET
auf Bestellung 96 Stücke:
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75+2.32 EUR
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IXFH24N80P IXFH24N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCB94722F39820&compId=IXFH(K%2CT)24N80P.pdf?ci_sign=de1ae4e3915cc5ae12d6efcc3663703594898c91 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
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IXFK24N80P IXFK24N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCB94722F39820&compId=IXFH(K%2CT)24N80P.pdf?ci_sign=de1ae4e3915cc5ae12d6efcc3663703594898c91 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO264
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
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IXFK27N80Q IXFK27N80Q IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC5E93D821F820&compId=IXFK(X)27N80Q.pdf?ci_sign=8daef21b45c2446e7f867bb9111fde52758b8bbd Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Power dissipation: 481W
Case: TO264
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
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IXFK34N80 IXFK34N80 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC5531C0BEB820&compId=IXFK(X)34N80.pdf?ci_sign=c21449cd8db7a186cc87835ff14b3420826840c0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Power dissipation: 568W
Case: TO264
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFK44N80P IXFK44N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D55A88536A9820&compId=IXFK(X)44N80P.pdf?ci_sign=fe7a22c35d7909b220aeebf7fe0c0b6a1d419d2d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhancement
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IXFK44N80Q3 IXFK44N80Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D555DA4D32F820&compId=IXFK(X)44N80Q3.pdf?ci_sign=dd049728423ed64df76c419a8fd12eba8ab2dd10 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
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MXHV9910B MXHV9910B IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED884E51E01529F2A18&compId=MXHV9910.pdf?ci_sign=ffd62dce3bffad03e2e18b014812ca4d02bc5561 Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; SO8
Topology: buck
Type of integrated circuit: driver
Mounting: SMD
Integrated circuit features: linear dimming; PWM
Kind of package: tube
Case: SO8
Operating temperature: -40...85°C
Output current: 0.28A
Input voltage: 8...450V
Output voltage: 12V
Frequency: 64kHz
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Produkt ist nicht verfügbar
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MXHV9910BE IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED884E51E01529F2A18&compId=MXHV9910.pdf?ci_sign=ffd62dce3bffad03e2e18b014812ca4d02bc5561 Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; 12V
Topology: buck
Type of integrated circuit: driver
Mounting: SMD
Integrated circuit features: linear dimming; PWM
Kind of package: tube
Case: SO8-EP
Operating temperature: -40...85°C
Output current: 0.28A
Input voltage: 8...450V
Output voltage: 12V
Frequency: 64kHz
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Produkt ist nicht verfügbar
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MXHV9910BETR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED884E51E01529F2A18&compId=MXHV9910.pdf?ci_sign=ffd62dce3bffad03e2e18b014812ca4d02bc5561 Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; 12V
Topology: buck
Type of integrated circuit: driver
Mounting: SMD
Integrated circuit features: linear dimming; PWM
Kind of package: reel; tape
Case: SO8-EP
Operating temperature: -40...85°C
Output current: 0.28A
Input voltage: 8...450V
Output voltage: 12V
Frequency: 64kHz
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Produkt ist nicht verfügbar
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MXHV9910BTR MXHV9910BTR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED884E51E01529F2A18&compId=MXHV9910.pdf?ci_sign=ffd62dce3bffad03e2e18b014812ca4d02bc5561 Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; SO8
Topology: buck
Type of integrated circuit: driver
Mounting: SMD
Integrated circuit features: linear dimming; PWM
Kind of package: reel; tape
Case: SO8
Operating temperature: -40...85°C
Output current: 0.28A
Input voltage: 8...450V
Output voltage: 12V
Frequency: 64kHz
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Produkt ist nicht verfügbar
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IXTA08N50D2 IXTA08N50D2 IXYS IXTA(P,Y)08N50D2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO263; 11ns
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 11ns
Gate charge: 312nC
Drain current: 0.8A
On-state resistance: 4.6Ω
Power dissipation: 60W
Drain-source voltage: 500V
Produkt ist nicht verfügbar
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IXTP08N50D2 IXTP08N50D2 IXYS IXTA(P,Y)08N50D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO220AB; 11ns
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 11ns
Gate charge: 312nC
Drain current: 0.8A
On-state resistance: 4.6Ω
Power dissipation: 60W
Drain-source voltage: 500V
auf Bestellung 264 Stücke:
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22+3.3 EUR
27+2.67 EUR
35+2.09 EUR
50+1.9 EUR
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IXTY08N50D2 IXTY08N50D2 IXYS IXTA(P,Y)08N50D2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO252; 11ns
Case: TO252
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 11ns
Gate charge: 312nC
Drain current: 0.8A
On-state resistance: 4.6Ω
Power dissipation: 60W
Drain-source voltage: 500V
Produkt ist nicht verfügbar
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IXFN20N120P IXFN20N120P.pdf
IXFN20N120P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 20A; SOT227B; screw; Idm: 50A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 20A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 570mΩ
Pulsed drain current: 50A
Power dissipation: 595W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 300ns
Gate charge: 193nC
Kind of channel: enhancement
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+19.18 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXFR20N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6B4B820&compId=IXFR20N120P.pdf?ci_sign=3ec4bae68a596108eefc3f91613f3b2a858b33a0
IXFR20N120P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 13A; 290W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 13A
Power dissipation: 290W
Case: ISOPLUS247™
On-state resistance: 0.63Ω
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+36.49 EUR
3+32.72 EUR
10+28.94 EUR
30+26.08 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXFX20N120P pVersion=0046&contRep=ZT&docId=005056AB82531EE995A92D5F7781F8BF&compId=IXF_20N120P.pdf?ci_sign=f8c33191702a2a0a34deabac8302d8b29e2cedba
IXFX20N120P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 20A; 780W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 20A
Power dissipation: 780W
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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IXGH20N120A3 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A97D0BC12338BF&compId=IXG_20N120A3.pdf?ci_sign=81a9cfbab75e86f2646df4a6079a62ddaef02364
IXGH20N120A3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 180W
Case: TO247-3
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 66ns
Turn-off time: 1.53µs
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
auf Bestellung 87 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.67 EUR
30+6.41 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXGP20N120A3 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A97D0BC12338BF&compId=IXG_20N120A3.pdf?ci_sign=81a9cfbab75e86f2646df4a6079a62ddaef02364
IXGP20N120A3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220AB
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 180W
Case: TO220AB
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Collector-emitter voltage: 1.2kV
Turn-on time: 66ns
Gate charge: 50nC
Turn-off time: 1.53µs
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.52 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IXGP20N120B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DABBDF3F92A3820&compId=IXGA(P)20N120B3.pdf?ci_sign=693eed04e1173248dc559ce9f74a6894b0b31c5f
IXGP20N120B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 180W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Collector-emitter voltage: 1.2kV
Turn-on time: 61ns
Gate charge: 51nC
Turn-off time: 720ns
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.35 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IXYA20N120C3HV pVersion=0046&contRep=ZT&docId=005056AB82531EE992CA262386AE78BF&compId=IXY_20N120C3_HV.pdf?ci_sign=69a66f2254c263ce93b6ce37d84ed69d8c442da0
IXYA20N120C3HV
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO263-2
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 278W
Case: TO263-2
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 60ns
Turn-off time: 215ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYH20N120C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DABCDC0A34F5820&compId=IXYH(P)20N120C3_HV.pdf?ci_sign=30885aa545e063da4e84233ac795b9469a3a4fce
IXYH20N120C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 278W
Case: TO247-3
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 60ns
Turn-off time: 0.22µs
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYH20N120C3D1 pVersion=0046&contRep=ZT&docId=005056AB82531EE992C9991A201638BF&compId=IXYH20N120C3D1.pdf?ci_sign=e120799112c6baf937977feba949005fd83421df
IXYH20N120C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 60ns
Turn-off time: 0.22µs
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 88A
auf Bestellung 247 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.22 EUR
10+9.87 EUR
30+9.75 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXYJ20N120C3D1 IXYJ20N120C3D1.pdf
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 21A; 105W; TO247
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 105W
Case: TO247
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 20ns
Turn-off time: 90ns
Collector current: 21A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYP20N120C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DABCDC0A34F5820&compId=IXYH(P)20N120C3_HV.pdf?ci_sign=30885aa545e063da4e84233ac795b9469a3a4fce
IXYP20N120C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 278W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Collector-emitter voltage: 1.2kV
Turn-on time: 60ns
Gate charge: 53nC
Turn-off time: 200ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYT20N120C3D1HV pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAC5027B64E7820&compId=IXYT20N120C3D1HV.pdf?ci_sign=919d7cd0b29220ac3b93c7617f2b3fdc9d073e25
IXYT20N120C3D1HV
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 17A; 230W; TO268HV
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 230W
Case: TO268HV
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 60ns
Turn-off time: 0.22µs
Collector current: 17A
Gate-emitter voltage: ±20V
Pulsed collector current: 88A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CPC1390GR pVersion=0046&contRep=ZT&docId=005056AB82531EE995A41EA29340F8BF&compId=cpc1390.pdf?ci_sign=4ed09f212104e2f97cb38f2c56316cc428366b9d
CPC1390GR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 140mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 140mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP4
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 1ms
Operating temperature: -40...85°C
Kind of output: MOSFET
auf Bestellung 235 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.77 EUR
31+2.33 EUR
100+2.14 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
CPC1390GV pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492320042C0C7&compId=CPC1390.pdf?ci_sign=02d27267f722e98ae1add0787a699a87ad053c38
CPC1390GV
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 140mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 140mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: THT
Case: DIP4
Operating temperature: -40...85°C
Turn-on time: 1ms
Turn-off time: 1ms
Body dimensions: 4.57x6.35x3.3mm
Control current max.: 50mA
Insulation voltage: 5kV
Kind of output: MOSFET
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.59 EUR
100+2.36 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IXFH34N60X2A IXFH34N60X2A.pdf
IXFH34N60X2A
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 600V; 34A; Idm: 68A; 540W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 34A
Pulsed drain current: 68A
Power dissipation: 540W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Application: automotive industry
Technology: HiPerFET™; X2-Class
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 164ns
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXFK64N60Q3 IXFK(X)64N60Q3.pdf
IXFK64N60Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 64A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+16.36 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXTP14N60X2 ixty2n65x2.pdf
IXTP14N60X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 18A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 16.7nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+7.95 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IXXH30N60B3D1 IXXH30N60B3D1-DTE.pdf
IXXH30N60B3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD
Type of transistor: IGBT
Power dissipation: 270W
Case: TO247AD
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Turn-on time: 23ns
Turn-off time: 125ns
Collector current: 30A
Pulsed collector current: 115A
Gate-emitter voltage: ±20V
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.35 EUR
11+7.05 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IXXN110N65B4H1 IXXN110N65B4H1.pdf
IXXN110N65B4H1
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX4™; XPT™
Power dissipation: 750W
Case: SOT227B
Type of semiconductor module: IGBT
Collector current: 110A
Gate-emitter voltage: ±20V
Pulsed collector current: 650A
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
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IXXN110N65C4H1 IXXN110N65C4H1.pdf
IXXN110N65C4H1
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX3™; XPT™
Power dissipation: 750W
Case: SOT227B
Type of semiconductor module: IGBT
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Collector current: 110A
Gate-emitter voltage: ±20V
Pulsed collector current: 470A
Max. off-state voltage: 650V
Produkt ist nicht verfügbar
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IXXR110N65B4H1 IXXR110N65B4H1.pdf
IXXR110N65B4H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 70A; 455W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 455W
Case: PLUS247™
Mounting: THT
Kind of package: tube
Collector current: 70A
Gate-emitter voltage: ±20V
Pulsed collector current: 490A
Collector-emitter voltage: 650V
Turn-off time: 250ns
Gate charge: 183nC
Turn-on time: 65ns
Produkt ist nicht verfügbar
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IXXX110N65B4H1 IXX_110N65B4H1.pdf
IXXX110N65B4H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 880W
Case: PLUS247™
Mounting: THT
Kind of package: tube
Collector current: 110A
Gate-emitter voltage: ±20V
Pulsed collector current: 570A
Collector-emitter voltage: 650V
Turn-off time: 250ns
Gate charge: 183nC
Turn-on time: 65ns
Produkt ist nicht verfügbar
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IXTH30N60P IXTH(Q,T,V)30N60P_S.pdf
IXTH30N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 500ns
Mounting: THT
Case: TO247-3
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Gate charge: 82nC
Reverse recovery time: 0.5µs
On-state resistance: 0.24Ω
Power dissipation: 540W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
auf Bestellung 276 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.05 EUR
10+9.19 EUR
30+8.54 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXTQ30N60L2 IXT_30N60L2.pdf
IXTQ30N60L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO3P
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 710ns
Power dissipation: 540W
Features of semiconductor devices: linear power mosfet
Gate charge: 335nC
Produkt ist nicht verfügbar
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IXTQ30N60P IXTH(Q,T,V)30N60P_S.pdf
IXTQ30N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO3P
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Power dissipation: 540W
Features of semiconductor devices: standard power mosfet
Gate charge: 82nC
Produkt ist nicht verfügbar
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IXTT30N60L2 IXT_30N60L2.pdf
IXTT30N60L2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 600V; 30A; 540W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 710ns
Power dissipation: 540W
Technology: Linear L2™
Gate charge: 335nC
Produkt ist nicht verfügbar
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IXTT30N60P IXTH(Q,T,V)30N60P_S.pdf
IXTT30N60P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO268
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Power dissipation: 540W
Features of semiconductor devices: standard power mosfet
Gate charge: 82nC
Produkt ist nicht verfügbar
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IXXH30N60C3D1 IXXH30N60C3D1.pdf
IXXH30N60C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 270W
Pulsed collector current: 110A
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Turn-on time: 37ns
Gate charge: 37nC
Turn-off time: 166ns
Produkt ist nicht verfügbar
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IXXQ30N60B3M IXXQ30N60B3M.pdf
IXXQ30N60B3M
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 19A; 90W; TO3PF
Type of transistor: IGBT
Case: TO3PF
Mounting: THT
Kind of package: tube
Collector current: 19A
Gate-emitter voltage: ±20V
Power dissipation: 90W
Pulsed collector current: 140A
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Turn-on time: 57ns
Gate charge: 39nC
Turn-off time: 292ns
Produkt ist nicht verfügbar
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IXFX55N50 IXFX50N50_IXFX55N50.pdf
IXFX55N50
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 55A; 520W; PLUS247™; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 55A
Power dissipation: 520W
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
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IXTA15N50L2 IXTA(H,P)15N50L2.pdf
IXTA15N50L2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO263; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.48Ω
Mounting: SMD
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 570ns
Produkt ist nicht verfügbar
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IXTH15N50L2 IXTA(H,P)15N50L2.pdf
IXTH15N50L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO247-3; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 570ns
auf Bestellung 230 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.8 EUR
30+7.89 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXTP15N50L2 IXTA(H,P)15N50L2.pdf
IXTP15N50L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO220AB; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 570ns
auf Bestellung 270 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.94 EUR
9+8.87 EUR
10+7.74 EUR
50+7.35 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXFH100N25P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC009820&compId=IXFH100N25P.pdf?ci_sign=8543bb8bfc45a45bf095f4e45a85eebb13fb2f81
IXFH100N25P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 250V; 100A; 600W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 185nC
On-state resistance: 27mΩ
Drain current: 100A
Power dissipation: 600W
Drain-source voltage: 250V
Produkt ist nicht verfügbar
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IXFH100N30X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBCDA1FA5458BF&compId=IXF_100N30X3_HV.pdf?ci_sign=291cad4ee4c338832090f6d9d224fee09028d26c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c
IXFH100N30X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 100A; 48W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 100A
Power dissipation: 48W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 130ns
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+14.21 EUR
10+13.31 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IXXH100N60C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB4E5B26A23820&compId=IXXH100N60C3.pdf?ci_sign=d34a8167233d2e352f733d1eb503fd101039fa57
IXXH100N60C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3
Mounting: THT
Turn-off time: 0.22µs
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 380A
Collector-emitter voltage: 600V
Power dissipation: 830W
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Turn-on time: 95s
Gate charge: 150nC
Produkt ist nicht verfügbar
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IXFK48N60P IXF_48N60P.pdf
IXFK48N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 830W
Case: TO264
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXGA48N60A3 IXGA(P,H)48N60A3.pdf
IXGA48N60A3
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO263
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 54ns
Turn-off time: 925ns
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 300A
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.82 EUR
14+5.22 EUR
16+4.62 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IXGH48N60B3C1 IXGH48N60B3C1-DTE.pdf
IXGH48N60B3C1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 48ns
Turn-off time: 347ns
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 280A
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.76 EUR
Mindestbestellmenge: 4
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IXGH48N60B3D1 IXGH48N60B3D1.pdf
IXGH48N60B3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 44ns
Turn-off time: 347ns
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 280A
auf Bestellung 264 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.4 EUR
30+7.95 EUR
Mindestbestellmenge: 8
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IXGH48N60C3D1 IXGH48N60C3D1.pdf
IXGH48N60C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 45ns
Turn-off time: 187ns
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 250A
auf Bestellung 172 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.58 EUR
8+9.84 EUR
10+8.75 EUR
30+7.56 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
CPC1117N pVersion=0046&contRep=ZT&docId=005056AB82531EE995A38CFB799FD8BF&compId=cpc1117n.pdf?ci_sign=42c5ed3862d631ccfa4f4ee18df640d714bcd8ff
CPC1117N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 150mA; max.60VAC
Case: SOP4
On-state resistance: 16Ω
Turn-off time: 10ms
Turn-on time: 10ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 150mA
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Switched voltage: max. 60V AC; max. 60V DC
auf Bestellung 861 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
47+1.54 EUR
52+1.4 EUR
100+1.33 EUR
300+1.19 EUR
Mindestbestellmenge: 47
Im Einkaufswagen  Stück im Wert von  UAH
MMO62-12IO6 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B8F478DC2F5F9E28&compId=MMo62-12io6-DTE.pdf?ci_sign=10ad4c18982c2d0b7cdd649068aaadc5dde3b16c
MMO62-12IO6
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 30A; SOT227B; Ufmax: 1.29V
Type of semiconductor module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.2kV
Load current: 30A
Case: SOT227B
Max. forward voltage: 1.29V
Max. forward impulse current: 0.4kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 100mA
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+30.97 EUR
Mindestbestellmenge: 3
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DSP8-12A pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF09019D31818BF&compId=DSP8-12A.pdf?ci_sign=4c1df90e7f9f491684d5e61712aacbe284a80828
DSP8-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 100A; TO220AB; 100W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: TO220AB
Max. forward voltage: 1.08V
Max. forward impulse current: 100A
Power dissipation: 100W
Kind of package: tube
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+11.91 EUR
Mindestbestellmenge: 6
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DSP8-12AS-TRL pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC4740C124560C4&compId=DSP8-12AS.pdf?ci_sign=c7e88fe8621910a4bd9800ab0ed9988bac77f308
DSP8-12AS-TRL
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120kA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Max. forward voltage: 1.08V
Max. forward impulse current: 120kA
Power dissipation: 100W
Kind of package: reel; tape
auf Bestellung 792 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.37 EUR
24+3 EUR
27+2.73 EUR
Mindestbestellmenge: 22
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DSP8-12AS-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC4740C124560C4&compId=DSP8-12AS.pdf?ci_sign=c7e88fe8621910a4bd9800ab0ed9988bac77f308
DSP8-12AS-TUB
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Max. forward voltage: 1.08V
Max. forward impulse current: 120A
Power dissipation: 100W
Kind of package: tube
Produkt ist nicht verfügbar
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CPC1945Y pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4384923AE38BF&compId=CPC1945Y.pdf?ci_sign=a1bb4db4c3f93e15666e949682f73ba24088c71a
CPC1945Y
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.120VAC; OptoMOS
Type of relay: solid state
Max. operating current: 1A
Switched voltage: max. 120V AC
Manufacturer series: OptoMOS
Relay variant: 1-phase
On-state resistance: 0.34Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Switching method: zero voltage switching
Turn-on time: 5ms
Turn-off time: 3ms
Body dimensions: 19.2x6.35x3.3mm
Control current max.: 100mA
Insulation voltage: 3.75kV
Kind of output: MOSFET
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.7 EUR
22+3.36 EUR
25+2.93 EUR
75+2.32 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IXFH24N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCB94722F39820&compId=IXFH(K%2CT)24N80P.pdf?ci_sign=de1ae4e3915cc5ae12d6efcc3663703594898c91
IXFH24N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFK24N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCB94722F39820&compId=IXFH(K%2CT)24N80P.pdf?ci_sign=de1ae4e3915cc5ae12d6efcc3663703594898c91
IXFK24N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO264
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
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IXFK27N80Q pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC5E93D821F820&compId=IXFK(X)27N80Q.pdf?ci_sign=8daef21b45c2446e7f867bb9111fde52758b8bbd
IXFK27N80Q
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Power dissipation: 481W
Case: TO264
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFK34N80 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC5531C0BEB820&compId=IXFK(X)34N80.pdf?ci_sign=c21449cd8db7a186cc87835ff14b3420826840c0
IXFK34N80
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Power dissipation: 568W
Case: TO264
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFK44N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D55A88536A9820&compId=IXFK(X)44N80P.pdf?ci_sign=fe7a22c35d7909b220aeebf7fe0c0b6a1d419d2d
IXFK44N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 255 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+21.04 EUR
5+20.06 EUR
10+18.9 EUR
Mindestbestellmenge: 4
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IXFK44N80Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D555DA4D32F820&compId=IXFK(X)44N80Q3.pdf?ci_sign=dd049728423ed64df76c419a8fd12eba8ab2dd10
IXFK44N80Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+19.32 EUR
Mindestbestellmenge: 4
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MXHV9910B pVersion=0046&contRep=ZT&docId=005056AB752F1ED884E51E01529F2A18&compId=MXHV9910.pdf?ci_sign=ffd62dce3bffad03e2e18b014812ca4d02bc5561
MXHV9910B
Hersteller: IXYS
Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; SO8
Topology: buck
Type of integrated circuit: driver
Mounting: SMD
Integrated circuit features: linear dimming; PWM
Kind of package: tube
Case: SO8
Operating temperature: -40...85°C
Output current: 0.28A
Input voltage: 8...450V
Output voltage: 12V
Frequency: 64kHz
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Produkt ist nicht verfügbar
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MXHV9910BE pVersion=0046&contRep=ZT&docId=005056AB752F1ED884E51E01529F2A18&compId=MXHV9910.pdf?ci_sign=ffd62dce3bffad03e2e18b014812ca4d02bc5561
Hersteller: IXYS
Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; 12V
Topology: buck
Type of integrated circuit: driver
Mounting: SMD
Integrated circuit features: linear dimming; PWM
Kind of package: tube
Case: SO8-EP
Operating temperature: -40...85°C
Output current: 0.28A
Input voltage: 8...450V
Output voltage: 12V
Frequency: 64kHz
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Produkt ist nicht verfügbar
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MXHV9910BETR pVersion=0046&contRep=ZT&docId=005056AB752F1ED884E51E01529F2A18&compId=MXHV9910.pdf?ci_sign=ffd62dce3bffad03e2e18b014812ca4d02bc5561
Hersteller: IXYS
Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; 12V
Topology: buck
Type of integrated circuit: driver
Mounting: SMD
Integrated circuit features: linear dimming; PWM
Kind of package: reel; tape
Case: SO8-EP
Operating temperature: -40...85°C
Output current: 0.28A
Input voltage: 8...450V
Output voltage: 12V
Frequency: 64kHz
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
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MXHV9910BTR pVersion=0046&contRep=ZT&docId=005056AB752F1ED884E51E01529F2A18&compId=MXHV9910.pdf?ci_sign=ffd62dce3bffad03e2e18b014812ca4d02bc5561
MXHV9910BTR
Hersteller: IXYS
Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; SO8
Topology: buck
Type of integrated circuit: driver
Mounting: SMD
Integrated circuit features: linear dimming; PWM
Kind of package: reel; tape
Case: SO8
Operating temperature: -40...85°C
Output current: 0.28A
Input voltage: 8...450V
Output voltage: 12V
Frequency: 64kHz
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
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IXTA08N50D2 IXTA(P,Y)08N50D2.pdf
IXTA08N50D2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO263; 11ns
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 11ns
Gate charge: 312nC
Drain current: 0.8A
On-state resistance: 4.6Ω
Power dissipation: 60W
Drain-source voltage: 500V
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IXTP08N50D2 IXTA(P,Y)08N50D2.pdf
IXTP08N50D2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO220AB; 11ns
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 11ns
Gate charge: 312nC
Drain current: 0.8A
On-state resistance: 4.6Ω
Power dissipation: 60W
Drain-source voltage: 500V
auf Bestellung 264 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.3 EUR
27+2.67 EUR
35+2.09 EUR
50+1.9 EUR
Mindestbestellmenge: 22
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IXTY08N50D2 IXTA(P,Y)08N50D2.pdf
IXTY08N50D2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO252; 11ns
Case: TO252
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 11ns
Gate charge: 312nC
Drain current: 0.8A
On-state resistance: 4.6Ω
Power dissipation: 60W
Drain-source voltage: 500V
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