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IXTH300N04T2 IXTH300N04T2 IXYS IXTH300N04T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 480W; TO247-3; 53ns
Drain-source voltage: 40V
Drain current: 300A
On-state resistance: 2.5mΩ
Power dissipation: 480W
Mounting: THT
Polarisation: unipolar
Gate charge: 145nC
Reverse recovery time: 53ns
Kind of channel: enhancement
Case: TO247-3
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
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IXTP300N04T2 IXTP300N04T2 IXYS IXTA(P)300N04T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 480W; TO220AB; 53ns
Drain-source voltage: 40V
Drain current: 300A
On-state resistance: 2.5mΩ
Power dissipation: 480W
Mounting: THT
Polarisation: unipolar
Gate charge: 145nC
Reverse recovery time: 53ns
Kind of channel: enhancement
Case: TO220AB
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
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IXTP3N50D2 IXTP3N50D2 IXYS IXTA(P)3N50D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO220AB; 24ns
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Reverse recovery time: 24ns
Gate charge: 1.07µC
On-state resistance: 1.5Ω
Drain current: 3A
Power dissipation: 125W
Drain-source voltage: 500V
Polarisation: unipolar
Case: TO220AB
Kind of channel: depletion
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14+6.25 EUR
25+5.14 EUR
50+4.26 EUR
100+3.93 EUR
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MDMA660U1600PTEH MDMA660U1600PTEH IXYS MDMA660U1600PTEH.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; 1.6kV; If: 660A; Ifsm: 5kA; module
Electrical mounting: Press-Fit
Max. forward impulse current: 5kA
Version: module
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Load current: 660A
Case: E3-Pack
Type of bridge rectifier: three-phase
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3+303.25 EUR
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IXFH30N50P IXFH30N50P IXYS IXFH30N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 30A; 460W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Technology: HiPerFET™; PolarHV™
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8+11.98 EUR
10+10.82 EUR
30+9.07 EUR
60+8.78 EUR
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IXFH30N50Q3 IXFH30N50Q3 IXYS IXFH30N50Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO247-3; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 690W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate-source voltage: ±20V
Technology: HiPerFET™
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IXTQ30N50L2 IXTQ30N50L2 IXYS IXTH(Q,T)30N50L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.215Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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IXTH30N50P IXTH30N50P IXYS IXTH(Q,T,V)30N50P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
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IXTQ30N50L IXTQ30N50L IXYS IXTH(Q,T)30N50L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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IXTQ30N50P IXTQ30N50P IXYS IXTH(Q,T,V)30N50P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO3P
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
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IXFT30N50P IXFT30N50P IXYS IXFH30N50P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
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IXFT30N50Q3 IXFT30N50Q3 IXYS IXFH30N50Q3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 690W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
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IXTT30N50L IXTT30N50L IXYS IXTH(Q,T)30N50L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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IXTT30N50L2 IXTT30N50L2 IXYS IXTH(Q,T)30N50L2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.215Ω
Mounting: SMD
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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IXTT30N50P IXTT30N50P IXYS IXTH(Q,T,V)30N50P_S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
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MCC72-16io8B MCC72-16io8B IXYS L076.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 115Ax2; TO240AA; screw
Case: TO240AA
Kind of package: bulk
Type of semiconductor module: thyristor
Semiconductor structure: double series
Mechanical mounting: screw
Electrical mounting: screw
Gate current: 150/200mA
Max. forward voltage: 1.74V
Load current: 115A x2
Max. forward impulse current: 1.54kA
Max. off-state voltage: 1.6kV
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CPC1945G CPC1945G IXYS CPC1945G.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; 1-phase
Case: DIP4
Mounting: THT
Type of relay: solid state
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 400V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
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IXFP6N120P IXFP6N120P IXYS IXFA(H,P)6N120P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 6A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 250W
Gate charge: 92nC
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6+14.61 EUR
7+13.36 EUR
10+11.3 EUR
25+9.81 EUR
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IXFN90N85X IXFN90N85X IXYS IXFN90N85X.pdf Category: Transistor modules
Description: Module; single transistor; 850V; 90A; SOT227B; screw; Idm: 180A
Drain-source voltage: 850V
Drain current: 90A
Power dissipation: 1.2kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 41mΩ
Kind of channel: enhancement
Pulsed drain current: 180A
Technology: HiPerFET™; X-Class
Type of semiconductor module: MOSFET transistor
Polarisation: unipolar
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Gate charge: 340nC
Reverse recovery time: 250ns
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LAA100PLTR IXYS LAA100L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
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LAA100PTR IXYS LAA100.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
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LAA100LSTR IXYS LAA100L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
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LAA100PL LAA100PL IXYS LAA100L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
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LAA100STR IXYS LAA100.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
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IXDN604SIA IXDN604SIA IXYS IXDD604PI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Case: SO8
Mounting: SMD
Kind of package: tube
Output current: -4...4A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Turn-on time: 81ns
Turn-off time: 79ns
Kind of integrated circuit: gate driver; low-side
Number of channels: 2
Supply voltage: 4.5...35V
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35+2.46 EUR
47+1.82 EUR
50+1.7 EUR
52+1.65 EUR
100+1.62 EUR
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IXDN609CI IXDN609CI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Case: TO220-5
Mounting: THT
Kind of package: tube
Output current: -9...9A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Turn-on time: 115ns
Turn-off time: 105ns
Kind of integrated circuit: gate driver; low-side
Number of channels: 1
Supply voltage: 4.5...35V
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26+3.37 EUR
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IXDN609YI IXDN609YI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Case: TO263-5
Mounting: SMD
Kind of package: tube
Output current: -9...9A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Turn-on time: 115ns
Turn-off time: 105ns
Kind of integrated circuit: gate driver; low-side
Number of channels: 1
Supply voltage: 4.5...35V
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23+3.71 EUR
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IXDN604SI IXDN604SI IXYS IXDD604PI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Case: SO8-EP
Mounting: SMD
Kind of package: tube
Output current: -4...4A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Turn-on time: 81ns
Turn-off time: 79ns
Kind of integrated circuit: gate driver; low-side
Number of channels: 2
Supply voltage: 4.5...35V
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50+3.21 EUR
100+3 EUR
200+2.8 EUR
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IXDN604SIATR IXDN604SIATR IXYS littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Output current: -4...4A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Turn-on time: 81ns
Turn-off time: 79ns
Kind of integrated circuit: gate driver; low-side
Number of channels: 2
Supply voltage: 4.5...35V
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IXDN604SITR IXDN604SITR IXYS littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Case: SO8-EP
Mounting: SMD
Kind of package: reel; tape
Output current: -4...4A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Turn-on time: 81ns
Turn-off time: 79ns
Kind of integrated circuit: gate driver; low-side
Number of channels: 2
Supply voltage: 4.5...35V
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MCMA110PD1800TB IXYS Littelfuse-Power-Semiconductors-MCMA110PD1800TB-Datasheet?assetguid=5C6AF596-D012-4339-B36B-1E6F5ED31A4F Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 110A; TO240AA; Ufmax: 1.5V
Gate current: 150mA
Max. forward voltage: 1.5V
Load current: 110A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 1.9kA
Type of semiconductor module: diode-thyristor
Case: TO240AA
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MCMA140PD1800TB IXYS MCMA140PD1800TB.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 140A; TO240AA; Ufmax: 1.5V; screw
Gate current: 150mA
Max. forward voltage: 1.5V
Load current: 140A
Max. off-state voltage: 1.8kV
Type of semiconductor module: diode-thyristor
Case: TO240AA
Mechanical mounting: screw
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MCMA200PD1800YB IXYS media?resourcetype=datasheets&itemid=294FA9BF-2490-4942-8301-8A50C78F70A7&filename=Littelfuse-Power-Semiconductors-MCMA200PD1800YB-Datasheet Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 200A; Y4-M6; Ufmax: 2.5V; Ifsm: 6kA
Gate current: 150mA
Max. forward voltage: 2.5V
Load current: 200A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 6kA
Type of semiconductor module: diode-thyristor
Case: Y4-M6
Mechanical mounting: screw
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IXXR100N60B3H1 IXXR100N60B3H1 IXYS IXXR100N60B3H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 400W; PLUS247™
Mounting: THT
Case: PLUS247™
Kind of package: tube
Turn-on time: 92ns
Gate charge: 143nC
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 100A
Power dissipation: 400W
Pulsed collector current: 440A
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
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IXFT150N30X3HV IXFT150N30X3HV IXYS IXF_150N30X3_HV.pdf 300VProductBrief.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO268
Mounting: SMD
Power dissipation: 890W
Gate charge: 254nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 150A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO268
On-state resistance: 8.3mΩ
Reverse recovery time: 167ns
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IXFH150N30X3 IXFH150N30X3 IXYS IXF_150N30X3_HV.pdf 300VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO247-3
Mounting: THT
Power dissipation: 890W
Gate charge: 254nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 150A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO247-3
On-state resistance: 8.3mΩ
Reverse recovery time: 167ns
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IXFK150N30X3 IXFK150N30X3 IXYS IXF_150N30X3_HV.pdf 300VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO264
Mounting: THT
Power dissipation: 890W
Gate charge: 254nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 150A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO264
On-state resistance: 8.3mΩ
Reverse recovery time: 167ns
Produkt ist nicht verfügbar
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MMIX1F230N20T IXYS littelfuse_discrete_mosfets_smpd_packages_mmix1f230n20t_datasheet.pdf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 200V; 156A; Idm: 630A
Mounting: SMD
Pulsed drain current: 630A
Power dissipation: 600W
Gate charge: 358nC
Polarisation: unipolar
Technology: GigaMOS™; HiPerFET™; Trench™
Drain current: 156A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SMPD
On-state resistance: 8.3mΩ
Reverse recovery time: 200ns
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VUB135-22NO1 IXYS media?resourcetype=datasheets&itemid=633EF3F8-FCB9-440E-BF5F-9F1D8A39DFA4&filename=Littelfuse-Power-Semiconductors-VUB135-22NO1-Datasheet Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.7kV; Ic: 80A
Type of semiconductor module: IGBT
Power dissipation: 445W
Mechanical mounting: screw
Pulsed collector current: 150A
Application: Inverter
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Case: E2-Pack
Gate-emitter voltage: ±20V
Collector current: 80A
Topology: buck chopper; NTC thermistor; three-phase diode bridge
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IXTA44P15T-TRL IXTA44P15T-TRL IXYS littelfuse-discrete-mosfets-ixt-44p15t-datasheet?assetguid=7f3ca350-d79f-4e06-bce3-4b5b84d96ba2 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 150V; 44A; 298W; D2PAK
Type of transistor: P-MOSFET
Drain-source voltage: 150V
Drain current: 44A
Power dissipation: 298W
Case: D2PAK
Gate-source voltage: 15V
On-state resistance: 65mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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LCA125 LCA125 IXYS LCA125.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 300V AC; max. 300V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP6
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: THT
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
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LAA125S LAA125S IXYS LAA125.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: SMT
Kind of output: MOSFET
Body dimensions: 9.66x6.35x3.3mm
Operating temperature: -40...85°C
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LCA125S LCA125S IXYS LCA125.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 300V AC; max. 300V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP6
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: SMT
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
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LAA125LS LAA125LS IXYS LAA125L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: SMT
Kind of output: MOSFET
Body dimensions: 9.66x6.35x3.3mm
Operating temperature: -40...85°C
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LCA125L LCA125L IXYS LCA125L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 300V AC; max. 300V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP6
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: THT
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
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LAA125P LAA125P IXYS LAA125.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: SMT
Kind of output: MOSFET
Body dimensions: 9.66x6.35x2.16mm
Operating temperature: -40...85°C
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LAA125PL LAA125PL IXYS LAA125L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: SMT
Kind of output: MOSFET
Body dimensions: 9.66x6.35x2.16mm
Operating temperature: -40...85°C
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LCA125LS LCA125LS IXYS LCA125L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 300V AC; max. 300V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP6
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: SMT
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
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DSP25-12AT-TRL IXYS media?resourcetype=datasheets&itemid=e596c328-6ce1-40f9-b9cf-5c4bf362b9c8&filename=Littelfuse-Power-Semiconductors-DSP25-12A-Datasheet Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 25A; D3PAK,TO268AA; Ufmax: 1.23V
Mounting: SMD
Case: D3PAK; TO268AA
Kind of package: reel; tape
Max. forward impulse current: 325A
Max. forward voltage: 1.23V
Max. off-state voltage: 1.2kV
Load current: 25A
Type of diode: rectifying
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DSEI25-06AS-TRL DSEI25-06AS-TRL IXYS Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 25A; 50ns; D2PAK,TO263AB; FRED
Mounting: SMD
Case: D2PAK; TO263AB
Kind of package: reel; tape
Technology: FRED
Max. off-state voltage: 0.6kV
Load current: 25A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 50ns
Produkt ist nicht verfügbar
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IXFP26N30X3 IXFP26N30X3 IXYS IXF_26N30X3.pdf 300VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 26A; 170W; TO220AB
On-state resistance: 66mΩ
Reverse recovery time: 105ns
Mounting: THT
Power dissipation: 170W
Gate charge: 22nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 26A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
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IXFP26N50P3 IXFP26N50P3 IXYS IXFH26N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO220AB
On-state resistance: 0.25Ω
Mounting: THT
Power dissipation: 500W
Gate charge: 42nC
Polarisation: unipolar
Drain current: 26A
Kind of channel: enhancement
Drain-source voltage: 500V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
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IXTP08N120P IXTP08N120P IXYS IXT_08N120P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.8A; 50W; TO220AB; 900ns
Mounting: THT
Case: TO220AB
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Kind of package: tube
On-state resistance: 25Ω
Reverse recovery time: 900ns
Power dissipation: 50W
Gate charge: 14nC
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 0.8A
Kind of channel: enhancement
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IXTA08N120P IXTA08N120P IXYS IXT_08N120P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 0.8A; 50W; TO263
Mounting: SMD
Case: TO263
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
On-state resistance: 25Ω
Reverse recovery time: 900ns
Power dissipation: 50W
Gate charge: 14nC
Polarisation: unipolar
Technology: Polar™
Drain current: 0.8A
Kind of channel: enhancement
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IXGT16N170A IXGT16N170A IXYS IXGH(t)16N170A_H1.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 11A
Power dissipation: 190W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Turn-on time: 35ns
Turn-off time: 298ns
Features of semiconductor devices: high voltage
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IXGT16N170AH1 IXGT16N170AH1 IXYS IXGH(t)16N170A_H1.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 11A
Power dissipation: 190W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Turn-on time: 35ns
Turn-off time: 298ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
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IXTQ140N10P IXTQ140N10P IXYS IXTQ140N10P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
Technology: PolarHT™
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IXTT140N10P IXTT140N10P IXYS IXTQ140N10P-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
Technology: PolarHT™
Produkt ist nicht verfügbar
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LDA100STR LDA100STR IXYS LDA100.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; Uinsul: 3.75kV; CTR@If: 33-300%@1mA; 50mA
Number of channels: 1
Mounting: SMD
Trigger current: 50mA
Collector-emitter voltage: 30V
CTR@If: 33-300%@1mA
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Turn-on time: 7µs
Turn-off time: 20µs
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400+0.77 EUR
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IXTA200N055T2 IXTA200N055T2 IXYS IXTA(P)200N055T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 200A; 360W; TO263; 49ns
Mounting: SMD
Power dissipation: 360W
Gate charge: 109nC
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 200A
Kind of channel: enhancement
Drain-source voltage: 55V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO263
On-state resistance: 4.2mΩ
Reverse recovery time: 49ns
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IXTH300N04T2 IXTH300N04T2.pdf
IXTH300N04T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 480W; TO247-3; 53ns
Drain-source voltage: 40V
Drain current: 300A
On-state resistance: 2.5mΩ
Power dissipation: 480W
Mounting: THT
Polarisation: unipolar
Gate charge: 145nC
Reverse recovery time: 53ns
Kind of channel: enhancement
Case: TO247-3
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
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IXTP300N04T2 IXTA(P)300N04T2.pdf
IXTP300N04T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 480W; TO220AB; 53ns
Drain-source voltage: 40V
Drain current: 300A
On-state resistance: 2.5mΩ
Power dissipation: 480W
Mounting: THT
Polarisation: unipolar
Gate charge: 145nC
Reverse recovery time: 53ns
Kind of channel: enhancement
Case: TO220AB
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
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IXTP3N50D2 IXTA(P)3N50D2.pdf
IXTP3N50D2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO220AB; 24ns
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Reverse recovery time: 24ns
Gate charge: 1.07µC
On-state resistance: 1.5Ω
Drain current: 3A
Power dissipation: 125W
Drain-source voltage: 500V
Polarisation: unipolar
Case: TO220AB
Kind of channel: depletion
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MDMA660U1600PTEH MDMA660U1600PTEH.pdf
MDMA660U1600PTEH
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; 1.6kV; If: 660A; Ifsm: 5kA; module
Electrical mounting: Press-Fit
Max. forward impulse current: 5kA
Version: module
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Load current: 660A
Case: E3-Pack
Type of bridge rectifier: three-phase
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IXFH30N50P IXFH30N50P.pdf
IXFH30N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 30A; 460W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Technology: HiPerFET™; PolarHV™
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10+10.82 EUR
30+9.07 EUR
60+8.78 EUR
Mindestbestellmenge: 7 Stücke
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IXFH30N50Q3 IXFH30N50Q3.pdf
IXFH30N50Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO247-3; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 690W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate-source voltage: ±20V
Technology: HiPerFET™
Produkt ist nicht verfügbar
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IXTQ30N50L2 IXTH(Q,T)30N50L2.pdf
IXTQ30N50L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.215Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
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IXTH30N50P IXTH(Q,T,V)30N50P_S.pdf
IXTH30N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
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IXTQ30N50L IXTH(Q,T)30N50L.pdf
IXTQ30N50L
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
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IXTQ30N50P IXTH(Q,T,V)30N50P_S.pdf
IXTQ30N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO3P
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
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IXFT30N50P IXFH30N50P.pdf
IXFT30N50P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFT30N50Q3 IXFH30N50Q3.pdf
IXFT30N50Q3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 690W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTT30N50L IXTH(Q,T)30N50L.pdf
IXTT30N50L
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
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IXTT30N50L2 IXTH(Q,T)30N50L2.pdf
IXTT30N50L2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.215Ω
Mounting: SMD
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
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IXTT30N50P IXTH(Q,T,V)30N50P_S.pdf
IXTT30N50P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
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MCC72-16io8B L076.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
MCC72-16io8B
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 115Ax2; TO240AA; screw
Case: TO240AA
Kind of package: bulk
Type of semiconductor module: thyristor
Semiconductor structure: double series
Mechanical mounting: screw
Electrical mounting: screw
Gate current: 150/200mA
Max. forward voltage: 1.74V
Load current: 115A x2
Max. forward impulse current: 1.54kA
Max. off-state voltage: 1.6kV
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
2+57.89 EUR
3+52.07 EUR
10+48.24 EUR
Mindestbestellmenge: 2 Stücke
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CPC1945G CPC1945G.pdf
CPC1945G
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; 1-phase
Case: DIP4
Mounting: THT
Type of relay: solid state
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 400V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
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IXFP6N120P IXFA(H,P)6N120P.pdf
IXFP6N120P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 6A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 250W
Gate charge: 92nC
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
6+14.61 EUR
7+13.36 EUR
10+11.3 EUR
25+9.81 EUR
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IXFN90N85X IXFN90N85X.pdf
IXFN90N85X
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 850V; 90A; SOT227B; screw; Idm: 180A
Drain-source voltage: 850V
Drain current: 90A
Power dissipation: 1.2kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 41mΩ
Kind of channel: enhancement
Pulsed drain current: 180A
Technology: HiPerFET™; X-Class
Type of semiconductor module: MOSFET transistor
Polarisation: unipolar
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Gate charge: 340nC
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
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LAA100PLTR LAA100L.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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LAA100PTR LAA100.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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LAA100LSTR LAA100L.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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LAA100PL LAA100L.pdf
LAA100PL
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LAA100STR LAA100.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IXDN604SIA IXDD604PI.pdf
IXDN604SIA
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Case: SO8
Mounting: SMD
Kind of package: tube
Output current: -4...4A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Turn-on time: 81ns
Turn-off time: 79ns
Kind of integrated circuit: gate driver; low-side
Number of channels: 2
Supply voltage: 4.5...35V
auf Bestellung 494 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
35+2.46 EUR
47+1.82 EUR
50+1.7 EUR
52+1.65 EUR
100+1.62 EUR
Mindestbestellmenge: 35 Stücke
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IXDN609CI IXDD609CI.pdf
IXDN609CI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Case: TO220-5
Mounting: THT
Kind of package: tube
Output current: -9...9A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Turn-on time: 115ns
Turn-off time: 105ns
Kind of integrated circuit: gate driver; low-side
Number of channels: 1
Supply voltage: 4.5...35V
auf Bestellung 1024 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
19+4.5 EUR
26+3.37 EUR
28+3.15 EUR
Mindestbestellmenge: 19 Stücke
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IXDN609YI IXDD609CI.pdf
IXDN609YI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Case: TO263-5
Mounting: SMD
Kind of package: tube
Output current: -9...9A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Turn-on time: 115ns
Turn-off time: 105ns
Kind of integrated circuit: gate driver; low-side
Number of channels: 1
Supply voltage: 4.5...35V
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
20+4.39 EUR
23+3.71 EUR
50+3.15 EUR
100+2.96 EUR
Mindestbestellmenge: 20 Stücke
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IXDN604SI IXDD604PI.pdf
IXDN604SI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Case: SO8-EP
Mounting: SMD
Kind of package: tube
Output current: -4...4A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Turn-on time: 81ns
Turn-off time: 79ns
Kind of integrated circuit: gate driver; low-side
Number of channels: 2
Supply voltage: 4.5...35V
auf Bestellung 878 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
23+3.8 EUR
50+3.21 EUR
100+3 EUR
200+2.8 EUR
300+2.74 EUR
Mindestbestellmenge: 23 Stücke
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IXDN604SIATR littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200
IXDN604SIATR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Output current: -4...4A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Turn-on time: 81ns
Turn-off time: 79ns
Kind of integrated circuit: gate driver; low-side
Number of channels: 2
Supply voltage: 4.5...35V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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IXDN604SITR littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200
IXDN604SITR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Case: SO8-EP
Mounting: SMD
Kind of package: reel; tape
Output current: -4...4A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Turn-on time: 81ns
Turn-off time: 79ns
Kind of integrated circuit: gate driver; low-side
Number of channels: 2
Supply voltage: 4.5...35V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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MCMA110PD1800TB Littelfuse-Power-Semiconductors-MCMA110PD1800TB-Datasheet?assetguid=5C6AF596-D012-4339-B36B-1E6F5ED31A4F
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 110A; TO240AA; Ufmax: 1.5V
Gate current: 150mA
Max. forward voltage: 1.5V
Load current: 110A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 1.9kA
Type of semiconductor module: diode-thyristor
Case: TO240AA
Produkt ist nicht verfügbar
Mindestbestellmenge: 36 Stücke
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MCMA140PD1800TB MCMA140PD1800TB.pdf
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 140A; TO240AA; Ufmax: 1.5V; screw
Gate current: 150mA
Max. forward voltage: 1.5V
Load current: 140A
Max. off-state voltage: 1.8kV
Type of semiconductor module: diode-thyristor
Case: TO240AA
Mechanical mounting: screw
Produkt ist nicht verfügbar
Mindestbestellmenge: 36 Stücke
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MCMA200PD1800YB media?resourcetype=datasheets&itemid=294FA9BF-2490-4942-8301-8A50C78F70A7&filename=Littelfuse-Power-Semiconductors-MCMA200PD1800YB-Datasheet
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 200A; Y4-M6; Ufmax: 2.5V; Ifsm: 6kA
Gate current: 150mA
Max. forward voltage: 2.5V
Load current: 200A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 6kA
Type of semiconductor module: diode-thyristor
Case: Y4-M6
Mechanical mounting: screw
Produkt ist nicht verfügbar
Mindestbestellmenge: 6 Stücke
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IXXR100N60B3H1 IXXR100N60B3H1.pdf
IXXR100N60B3H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 400W; PLUS247™
Mounting: THT
Case: PLUS247™
Kind of package: tube
Turn-on time: 92ns
Gate charge: 143nC
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 100A
Power dissipation: 400W
Pulsed collector current: 440A
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Produkt ist nicht verfügbar
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IXFT150N30X3HV IXF_150N30X3_HV.pdf 300VProductBrief.pdf
IXFT150N30X3HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO268
Mounting: SMD
Power dissipation: 890W
Gate charge: 254nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 150A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO268
On-state resistance: 8.3mΩ
Reverse recovery time: 167ns
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
4+25.93 EUR
5+24.78 EUR
Mindestbestellmenge: 4 Stücke
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IXFH150N30X3 IXF_150N30X3_HV.pdf 300VProductBrief.pdf
IXFH150N30X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO247-3
Mounting: THT
Power dissipation: 890W
Gate charge: 254nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 150A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO247-3
On-state resistance: 8.3mΩ
Reverse recovery time: 167ns
Produkt ist nicht verfügbar
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IXFK150N30X3 IXF_150N30X3_HV.pdf 300VProductBrief.pdf
IXFK150N30X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO264
Mounting: THT
Power dissipation: 890W
Gate charge: 254nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 150A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO264
On-state resistance: 8.3mΩ
Reverse recovery time: 167ns
Produkt ist nicht verfügbar
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MMIX1F230N20T littelfuse_discrete_mosfets_smpd_packages_mmix1f230n20t_datasheet.pdf.pdf
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 200V; 156A; Idm: 630A
Mounting: SMD
Pulsed drain current: 630A
Power dissipation: 600W
Gate charge: 358nC
Polarisation: unipolar
Technology: GigaMOS™; HiPerFET™; Trench™
Drain current: 156A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SMPD
On-state resistance: 8.3mΩ
Reverse recovery time: 200ns
Produkt ist nicht verfügbar
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VUB135-22NO1 media?resourcetype=datasheets&itemid=633EF3F8-FCB9-440E-BF5F-9F1D8A39DFA4&filename=Littelfuse-Power-Semiconductors-VUB135-22NO1-Datasheet
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.7kV; Ic: 80A
Type of semiconductor module: IGBT
Power dissipation: 445W
Mechanical mounting: screw
Pulsed collector current: 150A
Application: Inverter
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Case: E2-Pack
Gate-emitter voltage: ±20V
Collector current: 80A
Topology: buck chopper; NTC thermistor; three-phase diode bridge
Produkt ist nicht verfügbar
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IXTA44P15T-TRL littelfuse-discrete-mosfets-ixt-44p15t-datasheet?assetguid=7f3ca350-d79f-4e06-bce3-4b5b84d96ba2
IXTA44P15T-TRL
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 150V; 44A; 298W; D2PAK
Type of transistor: P-MOSFET
Drain-source voltage: 150V
Drain current: 44A
Power dissipation: 298W
Case: D2PAK
Gate-source voltage: 15V
On-state resistance: 65mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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LCA125 LCA125.pdf
LCA125
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 300V AC; max. 300V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP6
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: THT
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
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10+9.17 EUR
12+7.21 EUR
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LAA125S LAA125.pdf
LAA125S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: SMT
Kind of output: MOSFET
Body dimensions: 9.66x6.35x3.3mm
Operating temperature: -40...85°C
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LCA125S LCA125.pdf
LCA125S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 300V AC; max. 300V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP6
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: SMT
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
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7+13.03 EUR
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100+6.88 EUR
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LAA125LS LAA125L.pdf
LAA125LS
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: SMT
Kind of output: MOSFET
Body dimensions: 9.66x6.35x3.3mm
Operating temperature: -40...85°C
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7+13.07 EUR
10+10.46 EUR
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LCA125L LCA125L.pdf
LCA125L
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 300V AC; max. 300V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP6
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: THT
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
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7+13.24 EUR
50+8.68 EUR
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LAA125P LAA125.pdf
LAA125P
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: SMT
Kind of output: MOSFET
Body dimensions: 9.66x6.35x2.16mm
Operating temperature: -40...85°C
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9+10.36 EUR
100+8.31 EUR
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LAA125PL LAA125L.pdf
LAA125PL
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: SMT
Kind of output: MOSFET
Body dimensions: 9.66x6.35x2.16mm
Operating temperature: -40...85°C
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5+17.97 EUR
50+11.78 EUR
100+9.42 EUR
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LCA125LS LCA125L.pdf
LCA125LS
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 300V AC; max. 300V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP6
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: SMT
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
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7+13.24 EUR
50+8.68 EUR
100+6.97 EUR
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DSP25-12AT-TRL media?resourcetype=datasheets&itemid=e596c328-6ce1-40f9-b9cf-5c4bf362b9c8&filename=Littelfuse-Power-Semiconductors-DSP25-12A-Datasheet
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 25A; D3PAK,TO268AA; Ufmax: 1.23V
Mounting: SMD
Case: D3PAK; TO268AA
Kind of package: reel; tape
Max. forward impulse current: 325A
Max. forward voltage: 1.23V
Max. off-state voltage: 1.2kV
Load current: 25A
Type of diode: rectifying
Produkt ist nicht verfügbar
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DSEI25-06AS-TRL
DSEI25-06AS-TRL
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 25A; 50ns; D2PAK,TO263AB; FRED
Mounting: SMD
Case: D2PAK; TO263AB
Kind of package: reel; tape
Technology: FRED
Max. off-state voltage: 0.6kV
Load current: 25A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 50ns
Produkt ist nicht verfügbar
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IXFP26N30X3 IXF_26N30X3.pdf 300VProductBrief.pdf
IXFP26N30X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 26A; 170W; TO220AB
On-state resistance: 66mΩ
Reverse recovery time: 105ns
Mounting: THT
Power dissipation: 170W
Gate charge: 22nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 26A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
auf Bestellung 208 Stücke:
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19+4.52 EUR
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IXFP26N50P3 IXFH26N50P3.pdf
IXFP26N50P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO220AB
On-state resistance: 0.25Ω
Mounting: THT
Power dissipation: 500W
Gate charge: 42nC
Polarisation: unipolar
Drain current: 26A
Kind of channel: enhancement
Drain-source voltage: 500V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
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IXTP08N120P IXT_08N120P.pdf
IXTP08N120P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.8A; 50W; TO220AB; 900ns
Mounting: THT
Case: TO220AB
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Kind of package: tube
On-state resistance: 25Ω
Reverse recovery time: 900ns
Power dissipation: 50W
Gate charge: 14nC
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 0.8A
Kind of channel: enhancement
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IXTA08N120P IXT_08N120P.pdf
IXTA08N120P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 0.8A; 50W; TO263
Mounting: SMD
Case: TO263
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
On-state resistance: 25Ω
Reverse recovery time: 900ns
Power dissipation: 50W
Gate charge: 14nC
Polarisation: unipolar
Technology: Polar™
Drain current: 0.8A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXGT16N170A IXGH(t)16N170A_H1.pdf
IXGT16N170A
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 11A
Power dissipation: 190W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Turn-on time: 35ns
Turn-off time: 298ns
Features of semiconductor devices: high voltage
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IXGT16N170AH1 IXGH(t)16N170A_H1.pdf
IXGT16N170AH1
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 11A
Power dissipation: 190W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Turn-on time: 35ns
Turn-off time: 298ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
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IXTQ140N10P IXTQ140N10P-DTE.pdf
IXTQ140N10P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
Technology: PolarHT™
Produkt ist nicht verfügbar
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IXTT140N10P IXTQ140N10P-DTE.pdf
IXTT140N10P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
Technology: PolarHT™
Produkt ist nicht verfügbar
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LDA100STR LDA100.pdf
LDA100STR
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; Uinsul: 3.75kV; CTR@If: 33-300%@1mA; 50mA
Number of channels: 1
Mounting: SMD
Trigger current: 50mA
Collector-emitter voltage: 30V
CTR@If: 33-300%@1mA
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Turn-on time: 7µs
Turn-off time: 20µs
auf Bestellung 720 Stücke:
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73+1.18 EUR
86+0.99 EUR
100+0.86 EUR
400+0.77 EUR
500+0.76 EUR
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IXTA200N055T2 IXTA(P)200N055T2.pdf
IXTA200N055T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 200A; 360W; TO263; 49ns
Mounting: SMD
Power dissipation: 360W
Gate charge: 109nC
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 200A
Kind of channel: enhancement
Drain-source voltage: 55V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO263
On-state resistance: 4.2mΩ
Reverse recovery time: 49ns
Produkt ist nicht verfügbar
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