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CS22-12IO1M CS22-12IO1M IXYS CS22-12IO1M-DTE.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 25A; 16A; Igt: 30mA; TO220FP; THT; tube
Max. off-state voltage: 1.2kV
Load current: 16A
Case: TO220FP
Mounting: THT
Max. load current: 25A
Max. forward impulse current: 0.3kA
Kind of package: tube
Gate current: 30mA
Thyristor: thyristor
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CLA15E1200NPB CLA15E1200NPB IXYS CLA15E1200NPB.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 33A; 15A; Igt: 40mA; TO220AB; THT; tube
Max. off-state voltage: 1.2kV
Load current: 15A
Case: TO220AB
Mounting: THT
Max. load current: 33A
Max. forward impulse current: 185A
Kind of package: tube
Features of semiconductor devices: two gate polarities
Gate current: 40mA
Thyristor: thyristor
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IX2127G IX2127G IXYS IX2127.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -500÷250mA; Ch: 1; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -500...250mA
Number of channels: 1
Supply voltage: 9...12V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
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IXTK90N25L2 IXTK90N25L2 IXYS IXTK(X)90N25L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 90A; 960W; TO264; 266ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 90A
Power dissipation: 960W
Case: TO264
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 640nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 266ns
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CPC1393GR CPC1393GR IXYS CPC1393.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Mounting: SMT
Case: DIP4
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Operating temperature: -40...85°C
Turn-off time: 5ms
On-state resistance: 50Ω
Manufacturer series: OptoMOS
Kind of output: MOSFET
Contacts configuration: SPST-NO
Turn-on time: 5ms
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CPC1394GR CPC1394GR IXYS CPC1394.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Mounting: SMT
Case: DIP4
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Operating temperature: -40...85°C
Turn-off time: 3ms
On-state resistance: 40Ω
Manufacturer series: OptoMOS
Kind of output: MOSFET
Contacts configuration: SPST-NO
Turn-on time: 5ms
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CPC1333GR CPC1333GR IXYS CPC1333.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.350VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
Mounting: SMT
Case: DIP4
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Operating temperature: -40...85°C
Turn-off time: 3ms
On-state resistance: 30Ω
Manufacturer series: OptoMOS
Kind of output: MOSFET
Contacts configuration: SPST-NC
Turn-on time: 2ms
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CPC1394GV CPC1394GV IXYS CPC1394.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Mounting: THT
Case: DIP4
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Operating temperature: -40...85°C
Turn-off time: 3ms
On-state resistance: 40Ω
Manufacturer series: OptoMOS
Kind of output: MOSFET
Contacts configuration: SPST-NO
Turn-on time: 5ms
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MIXG450PF1700TSF IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 435A
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Technology: X2PT
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Case: SimBus F
Collector current: 435A
Topology: IGBT half-bridge; NTC thermistor
Produkt ist nicht verfügbar
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IXFH160N15T2 IXFH160N15T2 IXYS IXFH160N15T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 160A; 880W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 160A
Power dissipation: 880W
Case: TO247-3
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 253nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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IXYH60N90C3 IXYH60N90C3 IXYS IXYH60N90C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 60A; 750W; TO247-3
Type of transistor: IGBT
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 310A
Turn-on time: 104ns
Turn-off time: 268ns
Gate-emitter voltage: ±20V
Collector current: 60A
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IXDD604SI IXDD604SI IXYS IXDD604PI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
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IXDD604D2TR IXDD604D2TR IXYS IXDD604PI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
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IXDD604SITR IXDD604SITR IXYS littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
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IXGH50N90B2D1 IXGH50N90B2D1 IXYS IXG_50N90B2D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 50A; 400W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 900V
Collector current: 50A
Power dissipation: 400W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Technology: GenX3™; HiPerFAST™; PT
Turn-on time: 48ns
Turn-off time: 820ns
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IXGH50N90B2 IXGH50N90B2 IXYS IXGH(T)50N90B2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; HiPerFAST™; 900V; 50A; 400W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 900V
Collector current: 50A
Power dissipation: 400W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Technology: HiPerFAST™; XPT™
Turn-on time: 48ns
Turn-off time: 820ns
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IXYN80N90C3H1 IXYN80N90C3H1 IXYS IXYN80N90C3H1.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 70A; SOT227B; 500W
Collector current: 70A
Power dissipation: 500W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 340A
Type of semiconductor module: IGBT
Technology: GenX3™; XPT™
Mechanical mounting: screw
Max. off-state voltage: 900V
Electrical mounting: screw
Semiconductor structure: single transistor
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IXYT80N90C3 IXYT80N90C3 IXYS IXYH(T)80N90C3.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 80A; 830W; TO268
Type of transistor: IGBT
Collector-emitter voltage: 900V
Collector current: 80A
Power dissipation: 830W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: SMD
Gate charge: 145nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 134ns
Turn-off time: 201ns
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IXYH80N90C3 IXYH80N90C3 IXYS IXYH(T)80N90C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 80A; 830W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 900V
Collector current: 80A
Power dissipation: 830W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 134ns
Turn-off time: 201ns
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IXFP50N20X3 IXFP50N20X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_50n20x3_datasheet.pdf?assetguid=4654016f-96e1-44c8-b50b-388f1e88194d Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 50A; Idm: 70A; 240W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 70A
Power dissipation: 240W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
Technology: HiPerFET™; X3-Class
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IXFA50N20X3 IXFA50N20X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_50n20x3_datasheet.pdf?assetguid=4654016f-96e1-44c8-b50b-388f1e88194d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 50A; Idm: 70A; 240W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 70A
Power dissipation: 240W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
Technology: HiPerFET™; X3-Class
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IXFH150N20T IXFH150N20T IXYS IXFH(T)150N20T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 150A; 890W; TO247-3; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 150A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 177nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Features of semiconductor devices: thrench gate power mosfet
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IXFT150N20T IXFT150N20T IXYS IXFH(T)150N20T.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 150A; 890W; TO268; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 150A
Power dissipation: 890W
Case: TO268
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 177nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Features of semiconductor devices: thrench gate power mosfet
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IXFA12N50P IXFA12N50P IXYS IXF_12N50P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 29nC
Technology: HiPerFET™; Polar™
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 500V
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Reverse recovery time: 300ns
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IXFP12N50P IXFP12N50P IXYS IXF_12N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 29nC
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 500V
On-state resistance: 0.5Ω
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IXTA12N50P IXTA12N50P IXYS IXTA12N50P-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 29nC
Technology: Polar™
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 500V
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Reverse recovery time: 300ns
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IXFH16N80P IXFH16N80P IXYS IXFH16N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 16A; 460W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 16A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: PolarHV™
Gate-source voltage: ±30V
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IXFT16N80P IXFT16N80P IXYS IXFH16N80P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 16A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 16A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
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IXFK180N15P IXFK180N15P IXYS IXFK180N15P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 180A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 180A
Power dissipation: 830W
Case: TO264
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
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DCG20B650LB-TUB IXYS Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 650V; 16A; SMPD-B; SMT; tube
Type of bridge rectifier: single-phase
Max. off-state voltage: 650V
Load current: 16A
Case: SMPD-B
Electrical mounting: SMT
Kind of package: tube
Max. forward voltage: 2V
Features of semiconductor devices: Schottky
Technology: SiC
Produkt ist nicht verfügbar
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PLA150S PLA150S IXYS PLA150.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.250VAC
Mounting: SMT
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP6
Max. operating current: 250mA
Turn-off time: 0.5ms
Control current max.: 50mA
On-state resistance: 7Ω
Type of relay: solid state
Manufacturer series: OptoMOS
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PLA150 PLA150 IXYS PLA150.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.250VAC
Mounting: THT
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP6
Max. operating current: 250mA
Turn-off time: 0.5ms
Control current max.: 50mA
On-state resistance: 7Ω
Type of relay: solid state
Manufacturer series: OptoMOS
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PLB150S PLB150S IXYS PLB150.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 250mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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PAA191 PAA191 IXYS PAA191.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Mounting: THT
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
Insulation voltage: 5kV
Turn-on time: 3ms
Switched voltage: max. 400V AC; max. 400V DC
Case: DIP8
Max. operating current: 250mA
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
Type of relay: solid state
Manufacturer series: OptoMOS
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PBA150S PBA150S IXYS PBA150.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 250mA
Mounting: SMT
Relay variant: 1-phase; current source
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO + SPST-NC
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP8
Max. operating current: 250mA
Turn-off time: 2.5ms
Control current max.: 50mA
On-state resistance: 7Ω
Type of relay: solid state
Manufacturer series: OptoMOS
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IXXK200N60C3 IXXK200N60C3 IXYS IXXK(X)200N60C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 200A; 1.63kW; TO264
Type of transistor: IGBT
Collector current: 200A
Mounting: THT
Collector-emitter voltage: 600V
Power dissipation: 1.63kW
Gate charge: 315nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 900A
Turn-on time: 143ns
Kind of package: tube
Case: TO264
Turn-off time: 240ns
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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IXXX300N60C3 IXXX300N60C3 IXYS IXXK(x)300N60C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; PLUS247™
Type of transistor: IGBT
Collector current: 300A
Mounting: THT
Collector-emitter voltage: 600V
Power dissipation: 2.3kW
Gate charge: 438nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 1075A
Turn-on time: 128ns
Kind of package: tube
Case: PLUS247™
Turn-off time: 278ns
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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IXTA02N250HV IXTA02N250HV IXYS IXTA(T)02N250HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 0.2A; 83W; TO263; 1.5us
Reverse recovery time: 1.5µs
Mounting: SMD
Power dissipation: 83W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 0.2A
Kind of channel: enhancement
Drain-source voltage: 2.5kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO263
On-state resistance: 450Ω
Produkt ist nicht verfügbar
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IXTH02N250 IXTH02N250 IXYS IXTH02N250.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 0.2A; 83W; TO247-3; 1.5us
Power dissipation: 83W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 0.2A
Kind of channel: enhancement
Drain-source voltage: 2.5kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO247-3
On-state resistance: 450Ω
Reverse recovery time: 1.5µs
Mounting: THT
Produkt ist nicht verfügbar
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IXTQ470P2 IXTQ470P2 IXYS IXTQ470P2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO3P; 400ns
Case: TO3P
Mounting: THT
On-state resistance: 0.145Ω
Kind of package: tube
Power dissipation: 830W
Gate charge: 88nC
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 42A
Kind of channel: enhancement
Drain-source voltage: 500V
Type of transistor: N-MOSFET
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
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IXTQ120N15P IXTQ120N15P IXYS IXTQ120N15P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO3P
On-state resistance: 16mΩ
Reverse recovery time: 150ns
Mounting: THT
Power dissipation: 600W
Gate charge: 150nC
Polarisation: unipolar
Technology: PolarHT™
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO3P
Produkt ist nicht verfügbar
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IXXH75N60B3D1 IXXH75N60B3D1 IXYS IXXH75N60B3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 750W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Turn-on time: 108ns
Turn-off time: 315ns
Produkt ist nicht verfügbar
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CPC3960ZTR CPC3960ZTR IXYS CPC3960.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.1A; 1.8W; SOT223
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±15V
On-state resistance: 44Ω
Power dissipation: 1.8W
Polarisation: unipolar
Drain current: 0.1A
auf Bestellung 980 Stücke:
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85+1 EUR
113+0.75 EUR
134+0.63 EUR
500+0.6 EUR
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IXFP38N30X3M IXFP38N30X3M IXYS IXFP38N30X3M.pdf 300VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 38A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
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15+5.77 EUR
50+5.22 EUR
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IXFB210N20P IXFB210N20P IXYS IXFB210N20P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 210A; 1500W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.5kW
Case: PLUS264™
Mounting: THT
Gate charge: 255nC
Technology: HiPerFET™; Polar™
Drain current: 210A
Kind of channel: enhancement
Drain-source voltage: 200V
Kind of package: tube
On-state resistance: 10.5mΩ
Produkt ist nicht verfügbar
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MCB60I1200TZ-TUB IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 70A; TO268AA
Case: TO268AA
Technology: SiC
Gate charge: 160C
Polarisation: unipolar
Drain current: 70A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Kind of package: tube
On-state resistance: 25mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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MCB60P1200TLB-TRR IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 62A; SMPD-B
Semiconductor structure: double series
Case: SMPD-B
Technology: SiC
Gate charge: 161nC
Polarisation: unipolar
Drain current: 62A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Kind of package: reel; tape
On-state resistance: 25mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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MCB60P1200TLB-TUB IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 62A; SMPD-B
Semiconductor structure: double series
Case: SMPD-B
Technology: SiC
Gate charge: 161nC
Polarisation: unipolar
Drain current: 62A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Kind of package: tube
On-state resistance: 25mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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MDMA600P1600PTSF IXYS MDMA600P1600PTSF.pdf Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 600A; SimBus F; Ifsm: 15kA
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Case: SimBus F
Electrical mounting: Press-Fit
Mechanical mounting: screw
Kind of package: bulk
Max. forward impulse current: 15kA
Load current: 600A
Produkt ist nicht verfügbar
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MIXG240RF1200PTED IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; X2PT
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 250A
Case: E2-Pack PFP
Electrical mounting: Press-Fit
Technology: X2PT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MITA300RF1700PTED IXYS media?resourcetype=datasheets&amp;itemid=202c2010-df96-46c8-b404-30369d66b0f0&amp;filename=mita300rf1700pted.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.7kV
Collector current: 310A
Case: E2-Pack PFP
Electrical mounting: Press-Fit
Mechanical mounting: screw
Technology: Trench
Produkt ist nicht verfügbar
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MIXA100W1200TEH IXYS MIXA100W1200TEH.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 108A
Case: E3-Pack
Application: motors; photovoltaics
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 500W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Produkt ist nicht verfügbar
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VVZB170-16ioXT IXYS VVZB170-16IOXT.pdf Category: IGBT modules
Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 1.2kV
Type of semiconductor module: IGBT
Semiconductor structure: diode/thyristor/IGBT
Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 140A
Case: E2-Pack
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 500W
Technology: X2PT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MDNA360UB2200PTED IXYS MDNA360UB2200PTED.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Mechanical mounting: screw
Pulsed collector current: 280A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Case: E2-Pack
Gate-emitter voltage: ±20V
Collector current: 135A
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
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MDNA210UB2200PTED IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Mechanical mounting: screw
Pulsed collector current: 200A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Case: E2-Pack
Gate-emitter voltage: ±20V
Collector current: 100A
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
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IX4426N IX4426N IXYS IX4426-27-28.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Number of channels: 2
Output current: -1.5...1.5A
auf Bestellung 362 Stücke:
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96+0.89 EUR
97+0.88 EUR
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IXTP80N10T IXTP80N10T IXYS IXTA(P)80N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO220AB; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO220AB
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
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IXTT170N10P IXTT170N10P IXYS IXTK170N10P-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO268
Power dissipation: 715W
Gate charge: 198nC
Polarisation: unipolar
Technology: Polar™
Drain current: 170A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO268
On-state resistance: 9mΩ
Reverse recovery time: 120ns
Mounting: SMD
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7+13.03 EUR
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IXTT88N30P IXTT88N30P IXYS IXTH88N30P-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 88A; 600W; TO268
Power dissipation: 600W
Gate charge: 180nC
Polarisation: unipolar
Technology: PolarHT™
Drain current: 88A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO268
On-state resistance: 40mΩ
Reverse recovery time: 250ns
Mounting: SMD
auf Bestellung 140 Stücke:
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5+19.62 EUR
6+16.78 EUR
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DSB40C15PB DSB40C15PB IXYS DSB40C15PB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 15V; 20Ax2; TO220AB; Ufmax: 0.39V
Max. forward impulse current: 390A
Max. forward voltage: 0.39V
Power dissipation: 70W
Max. off-state voltage: 15V
Heatsink thickness: 1.14...1.39mm
Load current: 20A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: Schottky rectifying
Mounting: THT
auf Bestellung 48 Stücke:
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38+2.25 EUR
43+2.02 EUR
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CS22-12IO1M CS22-12IO1M-DTE.pdf
CS22-12IO1M
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 25A; 16A; Igt: 30mA; TO220FP; THT; tube
Max. off-state voltage: 1.2kV
Load current: 16A
Case: TO220FP
Mounting: THT
Max. load current: 25A
Max. forward impulse current: 0.3kA
Kind of package: tube
Gate current: 30mA
Thyristor: thyristor
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CLA15E1200NPB CLA15E1200NPB.pdf
CLA15E1200NPB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 33A; 15A; Igt: 40mA; TO220AB; THT; tube
Max. off-state voltage: 1.2kV
Load current: 15A
Case: TO220AB
Mounting: THT
Max. load current: 33A
Max. forward impulse current: 185A
Kind of package: tube
Features of semiconductor devices: two gate polarities
Gate current: 40mA
Thyristor: thyristor
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24+3.63 EUR
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IX2127G IX2127.pdf
IX2127G
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -500÷250mA; Ch: 1; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -500...250mA
Number of channels: 1
Supply voltage: 9...12V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
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IXTK90N25L2 IXTK(X)90N25L2.pdf
IXTK90N25L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 90A; 960W; TO264; 266ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 90A
Power dissipation: 960W
Case: TO264
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 640nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 266ns
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CPC1393GR CPC1393.pdf
CPC1393GR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Mounting: SMT
Case: DIP4
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Operating temperature: -40...85°C
Turn-off time: 5ms
On-state resistance: 50Ω
Manufacturer series: OptoMOS
Kind of output: MOSFET
Contacts configuration: SPST-NO
Turn-on time: 5ms
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16+5.5 EUR
18+4.88 EUR
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CPC1394GR CPC1394.pdf
CPC1394GR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Mounting: SMT
Case: DIP4
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Operating temperature: -40...85°C
Turn-off time: 3ms
On-state resistance: 40Ω
Manufacturer series: OptoMOS
Kind of output: MOSFET
Contacts configuration: SPST-NO
Turn-on time: 5ms
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11+8.38 EUR
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CPC1333GR CPC1333.pdf
CPC1333GR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.350VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
Mounting: SMT
Case: DIP4
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Operating temperature: -40...85°C
Turn-off time: 3ms
On-state resistance: 30Ω
Manufacturer series: OptoMOS
Kind of output: MOSFET
Contacts configuration: SPST-NC
Turn-on time: 2ms
auf Bestellung 107 Stücke:
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CPC1394GV CPC1394.pdf
CPC1394GV
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Mounting: THT
Case: DIP4
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Operating temperature: -40...85°C
Turn-off time: 3ms
On-state resistance: 40Ω
Manufacturer series: OptoMOS
Kind of output: MOSFET
Contacts configuration: SPST-NO
Turn-on time: 5ms
auf Bestellung 452 Stücke:
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11+8.38 EUR
100+5.47 EUR
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MIXG450PF1700TSF
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 435A
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Technology: X2PT
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Case: SimBus F
Collector current: 435A
Topology: IGBT half-bridge; NTC thermistor
Produkt ist nicht verfügbar
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IXFH160N15T2 IXFH160N15T2.pdf
IXFH160N15T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 160A; 880W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 160A
Power dissipation: 880W
Case: TO247-3
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 253nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 284 Stücke:
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8+10.97 EUR
30+8.91 EUR
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IXYH60N90C3 IXYH60N90C3.pdf
IXYH60N90C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 60A; 750W; TO247-3
Type of transistor: IGBT
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 310A
Turn-on time: 104ns
Turn-off time: 268ns
Gate-emitter voltage: ±20V
Collector current: 60A
auf Bestellung 257 Stücke:
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7+12.32 EUR
10+11.16 EUR
30+9.42 EUR
60+9.35 EUR
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IXDD604SI IXDD604PI.pdf
IXDD604SI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
auf Bestellung 1291 Stücke:
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19+4.58 EUR
25+3.47 EUR
27+3.18 EUR
50+3.08 EUR
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IXDD604D2TR IXDD604PI.pdf
IXDD604D2TR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
Produkt ist nicht verfügbar
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IXDD604SITR littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200
IXDD604SITR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
Produkt ist nicht verfügbar
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IXGH50N90B2D1 IXG_50N90B2D1.pdf
IXGH50N90B2D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 50A; 400W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 900V
Collector current: 50A
Power dissipation: 400W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Technology: GenX3™; HiPerFAST™; PT
Turn-on time: 48ns
Turn-off time: 820ns
auf Bestellung 240 Stücke:
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4+21.6 EUR
5+20.08 EUR
10+17.89 EUR
30+15.09 EUR
60+14.14 EUR
120+13.57 EUR
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IXGH50N90B2 IXGH(T)50N90B2.pdf
IXGH50N90B2
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; HiPerFAST™; 900V; 50A; 400W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 900V
Collector current: 50A
Power dissipation: 400W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Technology: HiPerFAST™; XPT™
Turn-on time: 48ns
Turn-off time: 820ns
auf Bestellung 122 Stücke:
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8+10.89 EUR
9+9.81 EUR
10+8.66 EUR
30+7.79 EUR
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IXYN80N90C3H1 IXYN80N90C3H1.pdf
IXYN80N90C3H1
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 70A; SOT227B; 500W
Collector current: 70A
Power dissipation: 500W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 340A
Type of semiconductor module: IGBT
Technology: GenX3™; XPT™
Mechanical mounting: screw
Max. off-state voltage: 900V
Electrical mounting: screw
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
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IXYT80N90C3 IXYH(T)80N90C3.pdf
IXYT80N90C3
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 80A; 830W; TO268
Type of transistor: IGBT
Collector-emitter voltage: 900V
Collector current: 80A
Power dissipation: 830W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: SMD
Gate charge: 145nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 134ns
Turn-off time: 201ns
Produkt ist nicht verfügbar
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IXYH80N90C3 IXYH(T)80N90C3.pdf
IXYH80N90C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 80A; 830W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 900V
Collector current: 80A
Power dissipation: 830W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 134ns
Turn-off time: 201ns
Produkt ist nicht verfügbar
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IXFP50N20X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_50n20x3_datasheet.pdf?assetguid=4654016f-96e1-44c8-b50b-388f1e88194d
IXFP50N20X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 50A; Idm: 70A; 240W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 70A
Power dissipation: 240W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
Technology: HiPerFET™; X3-Class
Produkt ist nicht verfügbar
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IXFA50N20X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_50n20x3_datasheet.pdf?assetguid=4654016f-96e1-44c8-b50b-388f1e88194d
IXFA50N20X3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 50A; Idm: 70A; 240W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 70A
Power dissipation: 240W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
Technology: HiPerFET™; X3-Class
Produkt ist nicht verfügbar
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IXFH150N20T IXFH(T)150N20T.pdf
IXFH150N20T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 150A; 890W; TO247-3; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 150A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 177nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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IXFT150N20T IXFH(T)150N20T.pdf
IXFT150N20T
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 150A; 890W; TO268; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 150A
Power dissipation: 890W
Case: TO268
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 177nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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IXFA12N50P IXF_12N50P.pdf
IXFA12N50P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 29nC
Technology: HiPerFET™; Polar™
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 500V
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Reverse recovery time: 300ns
auf Bestellung 101 Stücke:
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22+3.99 EUR
50+3.63 EUR
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IXFP12N50P IXF_12N50P.pdf
IXFP12N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 29nC
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 500V
On-state resistance: 0.5Ω
Produkt ist nicht verfügbar
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IXTA12N50P IXTA12N50P-DTE.pdf
IXTA12N50P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 29nC
Technology: Polar™
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 500V
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
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IXFH16N80P IXFH16N80P.pdf
IXFH16N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 16A; 460W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 16A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: PolarHV™
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
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IXFT16N80P IXFH16N80P.pdf
IXFT16N80P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 16A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 16A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFK180N15P IXFK180N15P.pdf
IXFK180N15P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 180A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 180A
Power dissipation: 830W
Case: TO264
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DCG20B650LB-TUB
Hersteller: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 650V; 16A; SMPD-B; SMT; tube
Type of bridge rectifier: single-phase
Max. off-state voltage: 650V
Load current: 16A
Case: SMPD-B
Electrical mounting: SMT
Kind of package: tube
Max. forward voltage: 2V
Features of semiconductor devices: Schottky
Technology: SiC
Produkt ist nicht verfügbar
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PLA150S PLA150.pdf
PLA150S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.250VAC
Mounting: SMT
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP6
Max. operating current: 250mA
Turn-off time: 0.5ms
Control current max.: 50mA
On-state resistance: 7Ω
Type of relay: solid state
Manufacturer series: OptoMOS
auf Bestellung 144 Stücke:
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10+8.94 EUR
100+8.32 EUR
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PLA150 PLA150.pdf
PLA150
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.250VAC
Mounting: THT
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP6
Max. operating current: 250mA
Turn-off time: 0.5ms
Control current max.: 50mA
On-state resistance: 7Ω
Type of relay: solid state
Manufacturer series: OptoMOS
auf Bestellung 95 Stücke:
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8+11.66 EUR
10+9.35 EUR
50+8.52 EUR
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PLB150S PLB150.pdf
PLB150S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 250mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
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5+18.91 EUR
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PAA191 PAA191.pdf
PAA191
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Mounting: THT
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
Insulation voltage: 5kV
Turn-on time: 3ms
Switched voltage: max. 400V AC; max. 400V DC
Case: DIP8
Max. operating current: 250mA
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
Type of relay: solid state
Manufacturer series: OptoMOS
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
4+27.72 EUR
Mindestbestellmenge: 4 Stücke
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PBA150S PBA150.pdf
PBA150S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 250mA
Mounting: SMT
Relay variant: 1-phase; current source
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO + SPST-NC
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP8
Max. operating current: 250mA
Turn-off time: 2.5ms
Control current max.: 50mA
On-state resistance: 7Ω
Type of relay: solid state
Manufacturer series: OptoMOS
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
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5+19.04 EUR
10+16.06 EUR
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IXXK200N60C3 IXXK(X)200N60C3.pdf
IXXK200N60C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 200A; 1.63kW; TO264
Type of transistor: IGBT
Collector current: 200A
Mounting: THT
Collector-emitter voltage: 600V
Power dissipation: 1.63kW
Gate charge: 315nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 900A
Turn-on time: 143ns
Kind of package: tube
Case: TO264
Turn-off time: 240ns
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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IXXX300N60C3 IXXK(x)300N60C3.pdf
IXXX300N60C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; PLUS247™
Type of transistor: IGBT
Collector current: 300A
Mounting: THT
Collector-emitter voltage: 600V
Power dissipation: 2.3kW
Gate charge: 438nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 1075A
Turn-on time: 128ns
Kind of package: tube
Case: PLUS247™
Turn-off time: 278ns
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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IXTA02N250HV IXTA(T)02N250HV.pdf
IXTA02N250HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 0.2A; 83W; TO263; 1.5us
Reverse recovery time: 1.5µs
Mounting: SMD
Power dissipation: 83W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 0.2A
Kind of channel: enhancement
Drain-source voltage: 2.5kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO263
On-state resistance: 450Ω
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IXTH02N250 IXTH02N250.pdf
IXTH02N250
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 0.2A; 83W; TO247-3; 1.5us
Power dissipation: 83W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 0.2A
Kind of channel: enhancement
Drain-source voltage: 2.5kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO247-3
On-state resistance: 450Ω
Reverse recovery time: 1.5µs
Mounting: THT
Produkt ist nicht verfügbar
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IXTQ470P2 IXTQ470P2.pdf
IXTQ470P2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO3P; 400ns
Case: TO3P
Mounting: THT
On-state resistance: 0.145Ω
Kind of package: tube
Power dissipation: 830W
Gate charge: 88nC
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 42A
Kind of channel: enhancement
Drain-source voltage: 500V
Type of transistor: N-MOSFET
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
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IXTQ120N15P IXTQ120N15P-DTE.pdf
IXTQ120N15P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO3P
On-state resistance: 16mΩ
Reverse recovery time: 150ns
Mounting: THT
Power dissipation: 600W
Gate charge: 150nC
Polarisation: unipolar
Technology: PolarHT™
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO3P
Produkt ist nicht verfügbar
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IXXH75N60B3D1 IXXH75N60B3D1.pdf
IXXH75N60B3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 750W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Turn-on time: 108ns
Turn-off time: 315ns
Produkt ist nicht verfügbar
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CPC3960ZTR CPC3960.pdf
CPC3960ZTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.1A; 1.8W; SOT223
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±15V
On-state resistance: 44Ω
Power dissipation: 1.8W
Polarisation: unipolar
Drain current: 0.1A
auf Bestellung 980 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
85+1 EUR
113+0.75 EUR
134+0.63 EUR
500+0.6 EUR
Mindestbestellmenge: 85 Stücke
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IXFP38N30X3M IXFP38N30X3M.pdf 300VProductBrief.pdf
IXFP38N30X3M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 38A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
auf Bestellung 268 Stücke:
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AnzahlPrivatkunde
13+6.72 EUR
15+5.77 EUR
50+5.22 EUR
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IXFB210N20P IXFB210N20P.pdf
IXFB210N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 210A; 1500W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.5kW
Case: PLUS264™
Mounting: THT
Gate charge: 255nC
Technology: HiPerFET™; Polar™
Drain current: 210A
Kind of channel: enhancement
Drain-source voltage: 200V
Kind of package: tube
On-state resistance: 10.5mΩ
Produkt ist nicht verfügbar
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MCB60I1200TZ-TUB
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 70A; TO268AA
Case: TO268AA
Technology: SiC
Gate charge: 160C
Polarisation: unipolar
Drain current: 70A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Kind of package: tube
On-state resistance: 25mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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MCB60P1200TLB-TRR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 62A; SMPD-B
Semiconductor structure: double series
Case: SMPD-B
Technology: SiC
Gate charge: 161nC
Polarisation: unipolar
Drain current: 62A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Kind of package: reel; tape
On-state resistance: 25mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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MCB60P1200TLB-TUB
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 62A; SMPD-B
Semiconductor structure: double series
Case: SMPD-B
Technology: SiC
Gate charge: 161nC
Polarisation: unipolar
Drain current: 62A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Kind of package: tube
On-state resistance: 25mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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MDMA600P1600PTSF MDMA600P1600PTSF.pdf
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 600A; SimBus F; Ifsm: 15kA
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Case: SimBus F
Electrical mounting: Press-Fit
Mechanical mounting: screw
Kind of package: bulk
Max. forward impulse current: 15kA
Load current: 600A
Produkt ist nicht verfügbar
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MIXG240RF1200PTED
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; X2PT
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 250A
Case: E2-Pack PFP
Electrical mounting: Press-Fit
Technology: X2PT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MITA300RF1700PTED media?resourcetype=datasheets&amp;itemid=202c2010-df96-46c8-b404-30369d66b0f0&amp;filename=mita300rf1700pted.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.7kV
Collector current: 310A
Case: E2-Pack PFP
Electrical mounting: Press-Fit
Mechanical mounting: screw
Technology: Trench
Produkt ist nicht verfügbar
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MIXA100W1200TEH MIXA100W1200TEH.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 108A
Case: E3-Pack
Application: motors; photovoltaics
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 500W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Produkt ist nicht verfügbar
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VVZB170-16ioXT VVZB170-16IOXT.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 1.2kV
Type of semiconductor module: IGBT
Semiconductor structure: diode/thyristor/IGBT
Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 140A
Case: E2-Pack
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 500W
Technology: X2PT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MDNA360UB2200PTED MDNA360UB2200PTED.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Mechanical mounting: screw
Pulsed collector current: 280A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Case: E2-Pack
Gate-emitter voltage: ±20V
Collector current: 135A
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
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MDNA210UB2200PTED
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Mechanical mounting: screw
Pulsed collector current: 200A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Case: E2-Pack
Gate-emitter voltage: ±20V
Collector current: 100A
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
Mindestbestellmenge: 28 Stücke
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IX4426N IX4426-27-28.pdf
IX4426N
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Number of channels: 2
Output current: -1.5...1.5A
auf Bestellung 362 Stücke:
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65+1.31 EUR
89+0.95 EUR
96+0.89 EUR
97+0.88 EUR
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IXTP80N10T IXTA(P)80N10T.pdf
IXTP80N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO220AB; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO220AB
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
auf Bestellung 44 Stücke:
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17+5.06 EUR
20+4.28 EUR
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IXTT170N10P IXTK170N10P-DTE.pdf
IXTT170N10P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO268
Power dissipation: 715W
Gate charge: 198nC
Polarisation: unipolar
Technology: Polar™
Drain current: 170A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO268
On-state resistance: 9mΩ
Reverse recovery time: 120ns
Mounting: SMD
auf Bestellung 13 Stücke:
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5+18.12 EUR
7+13.03 EUR
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IXTT88N30P IXTH88N30P-DTE.pdf
IXTT88N30P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 88A; 600W; TO268
Power dissipation: 600W
Gate charge: 180nC
Polarisation: unipolar
Technology: PolarHT™
Drain current: 88A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO268
On-state resistance: 40mΩ
Reverse recovery time: 250ns
Mounting: SMD
auf Bestellung 140 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
5+19.62 EUR
6+16.78 EUR
10+15.72 EUR
Mindestbestellmenge: 5 Stücke
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DSB40C15PB DSB40C15PB.pdf
DSB40C15PB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 15V; 20Ax2; TO220AB; Ufmax: 0.39V
Max. forward impulse current: 390A
Max. forward voltage: 0.39V
Power dissipation: 70W
Max. off-state voltage: 15V
Heatsink thickness: 1.14...1.39mm
Load current: 20A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: Schottky rectifying
Mounting: THT
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
38+2.25 EUR
43+2.02 EUR
48+1.78 EUR
Mindestbestellmenge: 38 Stücke
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