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IXFP34N65X3 IXFP34N65X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfp34n65x3-datasheet?assetguid=b8b82367-8165-4fdb-9be0-fbb097cfcc0b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: HiPerFET™; X3-Class
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IXTA34N65X2 IXTA34N65X2 IXYS IXTA34N65X2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO263
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Features of semiconductor devices: ultra junction x-class
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IXTH34N65X2 IXTH34N65X2 IXYS IXT_34N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO247-3; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Features of semiconductor devices: ultra junction x-class
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IXTP24N65X2 IXTP24N65X2 IXYS IXT_24N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Technology: X2-Class
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IXTP90N055T2 IXTP90N055T2 IXYS IXTA(I,P,Y)90N055T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 90A; 150W; TO220AB; 37ns
Case: TO220AB
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Drain-source voltage: 55V
Drain current: 90A
Reverse recovery time: 37ns
Gate charge: 42nC
On-state resistance: 8.4mΩ
Power dissipation: 150W
Polarisation: unipolar
Kind of channel: enhancement
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IXTR90P20P IXTR90P20P IXYS IXTR90P20P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -53A; 312W; 315ns
Case: ISOPLUS247™
Type of transistor: P-MOSFET
Mounting: THT
Technology: PolarP™
Kind of package: tube
Drain-source voltage: -200V
Drain current: -53A
Reverse recovery time: 315ns
Gate charge: 205nC
On-state resistance: 48mΩ
Power dissipation: 312W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
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IXFN26N100P IXFN26N100P IXYS IXFN26N100P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 23A; SOT227B; screw; Idm: 65A; 595W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 23A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 390mΩ
Pulsed drain current: 65A
Power dissipation: 595W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 300ns
Gate charge: 197nC
Kind of channel: enhancement
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IXYH40N65B3D1 IXYH40N65B3D1 IXYS IXYH(Q)40N65B3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 195A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Turn-on time: 57ns
Turn-off time: 350ns
Technology: GenX3™; Planar; XPT™
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IXYH40N65C3D1 IXYH40N65C3D1 IXYS IXYH(Q)40N65C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 160ns
Technology: GenX3™; Planar; XPT™
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IXYH40N65C3H1 IXYH40N65C3H1 IXYS IXYH40N65C3H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 206ns
Technology: GenX3™; Planar; XPT™
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IXXH140N65C4 IXXH140N65C4 IXYS IXXH140N65C4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 140A
Power dissipation: 1.2kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 730A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 114ns
Turn-off time: 273ns
Technology: GenX4™; Trench; XPT™
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IXTA05N100HV IXTA05N100HV IXYS IXTA(P)05N100_HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263HV; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO263HV
On-state resistance: 17Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
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IXFN220N20X3 IXFN220N20X3 IXYS IXFN220N20X3.pdf 200VProductBrief.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 160A; SOT227B; screw; Idm: 500A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 160A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 6.2mΩ
Pulsed drain current: 500A
Power dissipation: 390W
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 128ns
Gate charge: 204nC
Kind of channel: enhancement
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IXTX8N150L IXTX8N150L IXYS IXTK(X)8N150L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 8A; 700W; PLUS247™; 1.7us
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Type of transistor: N-MOSFET
Case: PLUS247™
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 250nC
Reverse recovery time: 1.7µs
On-state resistance: 3.6Ω
Power dissipation: 700W
Drain current: 8A
Drain-source voltage: 1.5kV
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IXTP24N65X2M IXTP24N65X2M IXYS IXTP24N65X2M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 37W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Technology: X2-Class
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IXGH36N60B3 IXGH36N60B3 IXYS IXGH36N60B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Collector current: 36A
Pulsed collector current: 200A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Turn-on time: 45ns
Turn-off time: 350ns
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IXGH36N60B3C1 IXGH36N60B3C1 IXYS IXGx36N60B3C1-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Collector current: 36A
Pulsed collector current: 200A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Turn-on time: 47ns
Turn-off time: 350ns
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IXFL82N60P IXFL82N60P IXYS IXFL82N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 55A; 625W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 55A
Power dissipation: 625W
Case: ISOPLUS264™
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
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IXFN50N120SK IXFN50N120SK IXYS media?resourcetype=datasheets&itemid=bd339330-b6b9-4c90-b751-d8293a8ae31c&filename=Littelfuse-Power-Semiconductors-IXFN50N120SK-Datasheet Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 48A; SOT227B; screw; SiC; 115nC
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 48A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 50mΩ
Technology: SiC
Gate-source voltage: -5...20V
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 54ns
Gate charge: 115nC
Kind of channel: enhancement
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IXFH230N10T IXFH230N10T IXYS IXFH230N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 230A; 650W; TO247-3; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 230A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 4.7mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 82ns
Features of semiconductor devices: thrench gate power mosfet
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IXFP130N10T2 IXFP130N10T2 IXYS IXFA(P)130N10T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 10.1mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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VVZ110-12IO7 IXYS VVZ110_VVZ175.pdf LFPCN250701_PWS-x screw.pdf Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 110A; PWS-E
Version: module
Case: PWS-E
Leads: M6 screws
Electrical mounting: FASTON connectors; screw
Type of bridge rectifier: half-controlled
Mechanical mounting: screw
Gate current: 100/200mA
Max. forward voltage: 1.75V
Load current: 110A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 1.35kA
Produkt ist nicht verfügbar
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PLB190 PLB190 IXYS PLB190.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
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PLB190S PLB190S IXYS PLB190.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
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PLB190STR IXYS PLB190.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
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IXTQ34N65X2M IXTQ34N65X2M IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixtq34n65x2m_datasheet.pdf?assetguid=9e2804bf-85d4-45e2-ba6f-de4ee48d3cec Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; Idm: 48A; 40W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 40W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
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IXTQ48N65X2M IXTQ48N65X2M IXYS Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 48A; Idm: 70A; 70W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48A
Pulsed drain current: 70A
Power dissipation: 70W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
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IXFN240N15T2 IXFN240N15T2 IXYS IXFN240N15T2.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 240A; SOT227B; screw; Idm: 600A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 150V
Drain current: 240A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 5.2mΩ
Pulsed drain current: 600A
Power dissipation: 830W
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 140ns
Gate charge: 460nC
Kind of channel: enhancement
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IXFB82N60Q3 IXFB82N60Q3 IXYS IXFB82N60Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 600V; 82A; 1560W; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 82A
Power dissipation: 1.56kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 275nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Q3-Class
Reverse recovery time: 300ns
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IXFN66N85X IXFN66N85X IXYS IXFN66N85X.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 850V; 65A; SOT227B; screw; Idm: 140A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 850V
Drain current: 65A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 65mΩ
Pulsed drain current: 140A
Power dissipation: 830W
Technology: HiPerFET™; X-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 250ns
Gate charge: 230nC
Kind of channel: enhancement
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IXFP26N65X2 IXFP26N65X2 IXYS 238_K248734.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26A; Idm: 36A; 460W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 36A
Power dissipation: 460W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
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IXFN40N110P IXFN40N110P IXYS IXFN40N110P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1.1kV; 34A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.1kV
Drain current: 34A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.26Ω
Pulsed drain current: 100A
Power dissipation: 890W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 300ns
Gate charge: 310nC
Kind of channel: enhancement
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IXFN40N110Q3 IXFN40N110Q3 IXYS IXFN40N110Q3.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1.1kV; 35A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.1kV
Drain current: 35A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.26Ω
Pulsed drain current: 100A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 434ns
Gate charge: 300nC
Kind of channel: enhancement
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IXFN60N80P IXFN60N80P IXYS IXFN60N80P.pdf description Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 53A; SOT227B; screw; Idm: 150A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 53A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.14Ω
Pulsed drain current: 150A
Power dissipation: 1.04kW
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 250ns
Gate charge: 250nC
Kind of channel: enhancement
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IXFH26N60P IXFH26N60P IXYS IXFH26N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 26A; 460W; TO247-3
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
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IXFK64N60P3 IXFK64N60P3 IXYS IXF_64N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 64A; 1130W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.13kW
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Reverse recovery time: 250ns
auf Bestellung 287 Stücke:
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IXBH20N300 IXBH20N300 IXYS littelfuse-discrete-igbts-ixb-20n300-datasheet?assetguid=70aa67f2-6f1d-44e3-9aec-3531d0e0a4cc Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 50A; 250W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Turn-on time: 64ns
Gate charge: 105nC
Turn-off time: 0.3µs
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 130A
Power dissipation: 250W
Collector-emitter voltage: 3kV
Technology: BiMOSFET™
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IXFH28N60P3 IXFH28N60P3 IXYS IXFH(Q)28N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; 695W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 475 Stücke:
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10+7.39 EUR
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IXFB82N60P IXFB82N60P IXYS IXFB82N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 82A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 82A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 200ns
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IXFH36N60P IXFH36N60P IXYS IXFH(K,T)36N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
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IXFN180N25T IXFN180N25T IXYS IXFN180N25T.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 168A; SOT227B; screw; Idm: 500A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 250V
Drain current: 168A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 12.9mΩ
Pulsed drain current: 500A
Power dissipation: 900W
Technology: GigaMOS™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 200ns
Gate charge: 364nC
Kind of channel: enhancement
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IXFA34N65X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfa34n65x3-datasheet?assetguid=7bd01bfc-f3d8-4755-8e6c-5e250cb5176f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: HiPerFET™; X3-Class
Produkt ist nicht verfügbar
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IXFH34N65X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh34n65x3-datasheet?assetguid=965e45cd-8715-4cf1-b85d-adaafdfc5ec2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: HiPerFET™; X3-Class
Produkt ist nicht verfügbar
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IXKH47N60C IXKH47N60C IXYS IXKH47N60C.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 290W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Produkt ist nicht verfügbar
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IXXH80N65B4 IXXH80N65B4 IXYS IXXH80N65B4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 625W
Case: TO247-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 125ns
Turn-off time: 222ns
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 430A
auf Bestellung 255 Stücke:
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120+5.81 EUR
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MCMA140PD1600TB MCMA140PD1600TB IXYS MCMA140PD1600TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 140A; TO240AA; Ufmax: 1.28V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Case: TO240AA
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.28V
Load current: 140A
Max. load current: 220A
Max. forward impulse current: 2.4kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
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IXTH90P10P IXTH90P10P IXYS IXT_90P10P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -90A; 462W; TO247-3
Case: TO247-3
Type of transistor: P-MOSFET
Mounting: THT
Technology: PolarP™
Kind of package: tube
Drain-source voltage: -100V
Drain current: -90A
Reverse recovery time: 144ns
Gate charge: 0.12µC
On-state resistance: 25mΩ
Power dissipation: 462W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
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IXTP8N65X2 IXTP8N65X2 IXYS IXT_8N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO220AB
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
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IXTQ22N50P IXTQ22N50P IXYS IXTH(Q,V)22N50P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO3P
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
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11+7.02 EUR
13+5.76 EUR
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IXFH22N50P IXFH22N50P IXYS IXFH22N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 92 Stücke:
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IXTH22N50P IXTH22N50P IXYS IXTH(Q,V)22N50P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
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IXFH40N50Q IXFH40N50Q IXYS IXFH40N50Q.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTH40N50L2 IXTH40N50L2 IXYS IXTH(T,Q)40N50L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: linear power mosfet
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IXTQ40N50L2 IXTQ40N50L2 IXYS IXTH(T,Q)40N50L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO3P
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: linear power mosfet
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IXTT40N50L2 IXTT40N50L2 IXYS IXTH(T,Q)40N50L2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO268
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: linear power mosfet
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IXFH30N50P IXFH30N50P IXYS IXFH30N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 30A; 460W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Technology: HiPerFET™; PolarHV™
auf Bestellung 13 Stücke:
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7+10.44 EUR
8+9.57 EUR
9+8.92 EUR
10+7.91 EUR
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IXFH30N50Q3 IXFH30N50Q3 IXYS IXFH30N50Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO247-3; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 690W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate-source voltage: ±20V
Technology: HiPerFET™
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IXTQ30N50L IXTQ30N50L IXYS IXTH(Q,T)30N50L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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IXTT30N50L IXTT30N50L IXYS IXTH(Q,T)30N50L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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IXTT30N50P IXTT30N50P IXYS IXTH(Q,T,V)30N50P_S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
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IXFP34N65X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfp34n65x3-datasheet?assetguid=b8b82367-8165-4fdb-9be0-fbb097cfcc0b
IXFP34N65X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: HiPerFET™; X3-Class
Produkt ist nicht verfügbar
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IXTA34N65X2 IXTA34N65X2.pdf
IXTA34N65X2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO263
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Features of semiconductor devices: ultra junction x-class
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IXTH34N65X2 IXT_34N65X2.pdf
IXTH34N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO247-3; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Features of semiconductor devices: ultra junction x-class
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IXTP24N65X2 IXT_24N65X2.pdf
IXTP24N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Technology: X2-Class
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Anzahl Preis
9+8.12 EUR
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IXTP90N055T2 IXTA(I,P,Y)90N055T2.pdf
IXTP90N055T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 90A; 150W; TO220AB; 37ns
Case: TO220AB
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Drain-source voltage: 55V
Drain current: 90A
Reverse recovery time: 37ns
Gate charge: 42nC
On-state resistance: 8.4mΩ
Power dissipation: 150W
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 290 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.52 EUR
34+2.16 EUR
50+1.82 EUR
100+1.66 EUR
200+1.6 EUR
Mindestbestellmenge: 21
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IXTR90P20P IXTR90P20P.pdf
IXTR90P20P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -53A; 312W; 315ns
Case: ISOPLUS247™
Type of transistor: P-MOSFET
Mounting: THT
Technology: PolarP™
Kind of package: tube
Drain-source voltage: -200V
Drain current: -53A
Reverse recovery time: 315ns
Gate charge: 205nC
On-state resistance: 48mΩ
Power dissipation: 312W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.22 EUR
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IXFN26N100P IXFN26N100P.pdf
IXFN26N100P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 23A; SOT227B; screw; Idm: 65A; 595W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 23A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 390mΩ
Pulsed drain current: 65A
Power dissipation: 595W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 300ns
Gate charge: 197nC
Kind of channel: enhancement
auf Bestellung 6 Stücke:
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Anzahl Preis
1+76.13 EUR
3+67.2 EUR
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IXYH40N65B3D1 IXYH(Q)40N65B3D1.pdf
IXYH40N65B3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 195A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Turn-on time: 57ns
Turn-off time: 350ns
Technology: GenX3™; Planar; XPT™
Produkt ist nicht verfügbar
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IXYH40N65C3D1 IXYH(Q)40N65C3D1.pdf
IXYH40N65C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 160ns
Technology: GenX3™; Planar; XPT™
Produkt ist nicht verfügbar
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IXYH40N65C3H1 IXYH40N65C3H1.pdf
IXYH40N65C3H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 206ns
Technology: GenX3™; Planar; XPT™
Produkt ist nicht verfügbar
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IXXH140N65C4 IXXH140N65C4.pdf
IXXH140N65C4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 140A
Power dissipation: 1.2kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 730A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 114ns
Turn-off time: 273ns
Technology: GenX4™; Trench; XPT™
Produkt ist nicht verfügbar
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IXTA05N100HV IXTA(P)05N100_HV.pdf
IXTA05N100HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263HV; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO263HV
On-state resistance: 17Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
auf Bestellung 290 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.13 EUR
15+4.85 EUR
18+4.12 EUR
50+3.22 EUR
Mindestbestellmenge: 14
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IXFN220N20X3 IXFN220N20X3.pdf 200VProductBrief.pdf
IXFN220N20X3
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 160A; SOT227B; screw; Idm: 500A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 160A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 6.2mΩ
Pulsed drain current: 500A
Power dissipation: 390W
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 128ns
Gate charge: 204nC
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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IXTX8N150L IXTK(X)8N150L.pdf
IXTX8N150L
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 8A; 700W; PLUS247™; 1.7us
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Type of transistor: N-MOSFET
Case: PLUS247™
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 250nC
Reverse recovery time: 1.7µs
On-state resistance: 3.6Ω
Power dissipation: 700W
Drain current: 8A
Drain-source voltage: 1.5kV
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+40.9 EUR
Mindestbestellmenge: 2
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IXTP24N65X2M IXTP24N65X2M.pdf
IXTP24N65X2M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 37W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Technology: X2-Class
auf Bestellung 86 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.71 EUR
17+4.22 EUR
50+3.3 EUR
Mindestbestellmenge: 13
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IXGH36N60B3 IXGH36N60B3.pdf
IXGH36N60B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Collector current: 36A
Pulsed collector current: 200A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Turn-on time: 45ns
Turn-off time: 350ns
auf Bestellung 223 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.23 EUR
30+4.49 EUR
Mindestbestellmenge: 12
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IXGH36N60B3C1 IXGx36N60B3C1-DTE.pdf
IXGH36N60B3C1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Collector current: 36A
Pulsed collector current: 200A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Turn-on time: 47ns
Turn-off time: 350ns
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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IXFL82N60P IXFL82N60P.pdf
IXFL82N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 55A; 625W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 55A
Power dissipation: 625W
Case: ISOPLUS264™
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.49 EUR
Mindestbestellmenge: 5
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IXFN50N120SK media?resourcetype=datasheets&itemid=bd339330-b6b9-4c90-b751-d8293a8ae31c&filename=Littelfuse-Power-Semiconductors-IXFN50N120SK-Datasheet
IXFN50N120SK
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 48A; SOT227B; screw; SiC; 115nC
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 48A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 50mΩ
Technology: SiC
Gate-source voltage: -5...20V
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 54ns
Gate charge: 115nC
Kind of channel: enhancement
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+111.74 EUR
3+98.78 EUR
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IXFH230N10T IXFH230N10T.pdf
IXFH230N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 230A; 650W; TO247-3; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 230A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 4.7mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 82ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.51 EUR
Mindestbestellmenge: 7
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IXFP130N10T2 IXFA(P)130N10T2.pdf
IXFP130N10T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 10.1mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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VVZ110-12IO7 VVZ110_VVZ175.pdf LFPCN250701_PWS-x screw.pdf
Hersteller: IXYS
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 110A; PWS-E
Version: module
Case: PWS-E
Leads: M6 screws
Electrical mounting: FASTON connectors; screw
Type of bridge rectifier: half-controlled
Mechanical mounting: screw
Gate current: 100/200mA
Max. forward voltage: 1.75V
Load current: 110A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 1.35kA
Produkt ist nicht verfügbar
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PLB190 PLB190.pdf
PLB190
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+7.11 EUR
12+6.16 EUR
50+5.29 EUR
Mindestbestellmenge: 11
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PLB190S PLB190.pdf
PLB190S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+7.06 EUR
Mindestbestellmenge: 11
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PLB190STR PLB190.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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IXTQ34N65X2M littelfuse_discrete_mosfets_n-channel_ultra_junction_ixtq34n65x2m_datasheet.pdf?assetguid=9e2804bf-85d4-45e2-ba6f-de4ee48d3cec
IXTQ34N65X2M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; Idm: 48A; 40W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 40W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.71 EUR
8+9.62 EUR
10+8.51 EUR
Mindestbestellmenge: 7
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IXTQ48N65X2M
IXTQ48N65X2M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 48A; Idm: 70A; 70W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48A
Pulsed drain current: 70A
Power dissipation: 70W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.08 EUR
7+11.8 EUR
10+10.42 EUR
Mindestbestellmenge: 6
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IXFN240N15T2 IXFN240N15T2.pdf
IXFN240N15T2
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 240A; SOT227B; screw; Idm: 600A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 150V
Drain current: 240A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 5.2mΩ
Pulsed drain current: 600A
Power dissipation: 830W
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 140ns
Gate charge: 460nC
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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IXFB82N60Q3 IXFB82N60Q3.pdf
IXFB82N60Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 600V; 82A; 1560W; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 82A
Power dissipation: 1.56kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 275nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Q3-Class
Reverse recovery time: 300ns
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+16.03 EUR
Mindestbestellmenge: 5
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IXFN66N85X IXFN66N85X.pdf
IXFN66N85X
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 850V; 65A; SOT227B; screw; Idm: 140A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 850V
Drain current: 65A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 65mΩ
Pulsed drain current: 140A
Power dissipation: 830W
Technology: HiPerFET™; X-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 250ns
Gate charge: 230nC
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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IXFP26N65X2 238_K248734.pdf
IXFP26N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26A; Idm: 36A; 460W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 36A
Power dissipation: 460W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.01 EUR
10+8.34 EUR
Mindestbestellmenge: 8
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IXFN40N110P IXFN40N110P.pdf
IXFN40N110P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.1kV; 34A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.1kV
Drain current: 34A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.26Ω
Pulsed drain current: 100A
Power dissipation: 890W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 300ns
Gate charge: 310nC
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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IXFN40N110Q3 IXFN40N110Q3.pdf
IXFN40N110Q3
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.1kV; 35A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.1kV
Drain current: 35A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.26Ω
Pulsed drain current: 100A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 434ns
Gate charge: 300nC
Kind of channel: enhancement
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
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IXFN60N80P description IXFN60N80P.pdf
IXFN60N80P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 53A; SOT227B; screw; Idm: 150A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 53A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.14Ω
Pulsed drain current: 150A
Power dissipation: 1.04kW
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 250ns
Gate charge: 250nC
Kind of channel: enhancement
auf Bestellung 187 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+45.62 EUR
Mindestbestellmenge: 2
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IXFH26N60P IXFH26N60P.pdf
IXFH26N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 26A; 460W; TO247-3
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
auf Bestellung 255 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.3 EUR
10+8.34 EUR
15+7.42 EUR
30+7.38 EUR
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IXFK64N60P3 IXF_64N60P3.pdf
IXFK64N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 64A; 1130W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.13kW
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Reverse recovery time: 250ns
auf Bestellung 287 Stücke:
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5+15.03 EUR
10+13.34 EUR
25+12.87 EUR
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IXBH20N300 littelfuse-discrete-igbts-ixb-20n300-datasheet?assetguid=70aa67f2-6f1d-44e3-9aec-3531d0e0a4cc
IXBH20N300
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 50A; 250W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Turn-on time: 64ns
Gate charge: 105nC
Turn-off time: 0.3µs
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 130A
Power dissipation: 250W
Collector-emitter voltage: 3kV
Technology: BiMOSFET™
Produkt ist nicht verfügbar
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IXFH28N60P3 IXFH(Q)28N60P3.pdf
IXFH28N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; 695W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 475 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.75 EUR
10+7.39 EUR
12+6.31 EUR
30+5.91 EUR
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IXFB82N60P IXFB82N60P.pdf
IXFB82N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 82A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 82A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 200ns
auf Bestellung 100 Stücke:
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Anzahl Preis
3+31.59 EUR
5+28.31 EUR
25+27.9 EUR
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IXFH36N60P IXFH(K,T)36N60P.pdf
IXFH36N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 270 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.64 EUR
7+10.24 EUR
10+9.67 EUR
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IXFN180N25T IXFN180N25T.pdf
IXFN180N25T
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 168A; SOT227B; screw; Idm: 500A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 250V
Drain current: 168A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 12.9mΩ
Pulsed drain current: 500A
Power dissipation: 900W
Technology: GigaMOS™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 200ns
Gate charge: 364nC
Kind of channel: enhancement
auf Bestellung 272 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+30.83 EUR
5+26.44 EUR
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IXFA34N65X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfa34n65x3-datasheet?assetguid=7bd01bfc-f3d8-4755-8e6c-5e250cb5176f
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: HiPerFET™; X3-Class
Produkt ist nicht verfügbar
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IXFH34N65X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh34n65x3-datasheet?assetguid=965e45cd-8715-4cf1-b85d-adaafdfc5ec2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: HiPerFET™; X3-Class
Produkt ist nicht verfügbar
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IXKH47N60C IXKH47N60C.pdf
IXKH47N60C
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 290W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Produkt ist nicht verfügbar
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IXXH80N65B4 IXXH80N65B4.pdf
IXXH80N65B4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 625W
Case: TO247-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 125ns
Turn-off time: 222ns
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 430A
auf Bestellung 255 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.65 EUR
10+7.86 EUR
30+6.08 EUR
120+5.81 EUR
Mindestbestellmenge: 8
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MCMA140PD1600TB MCMA140PD1600TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
MCMA140PD1600TB
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 140A; TO240AA; Ufmax: 1.28V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Case: TO240AA
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.28V
Load current: 140A
Max. load current: 220A
Max. forward impulse current: 2.4kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
auf Bestellung 14 Stücke:
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Anzahl Preis
2+44.93 EUR
6+41.27 EUR
Mindestbestellmenge: 2
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IXTH90P10P IXT_90P10P.pdf
IXTH90P10P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -90A; 462W; TO247-3
Case: TO247-3
Type of transistor: P-MOSFET
Mounting: THT
Technology: PolarP™
Kind of package: tube
Drain-source voltage: -100V
Drain current: -90A
Reverse recovery time: 144ns
Gate charge: 0.12µC
On-state resistance: 25mΩ
Power dissipation: 462W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 114 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.54 EUR
7+10.54 EUR
10+8.75 EUR
Mindestbestellmenge: 6
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IXTP8N65X2 IXT_8N65X2.pdf
IXTP8N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO220AB
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Produkt ist nicht verfügbar
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IXTQ22N50P IXTH(Q,V)22N50P_S.pdf
IXTQ22N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO3P
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+7.02 EUR
13+5.76 EUR
14+5.13 EUR
Mindestbestellmenge: 11
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IXFH22N50P IXFH22N50P.pdf
IXFH22N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 92 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.85 EUR
12+6.21 EUR
30+5.02 EUR
Mindestbestellmenge: 10
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IXTH22N50P IXTH(Q,V)22N50P_S.pdf
IXTH22N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
Produkt ist nicht verfügbar
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IXFH40N50Q IXFH40N50Q.pdf
IXFH40N50Q
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTH40N50L2 IXTH(T,Q)40N50L2.pdf
IXTH40N50L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: linear power mosfet
Produkt ist nicht verfügbar
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IXTQ40N50L2 IXTH(T,Q)40N50L2.pdf
IXTQ40N50L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO3P
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: linear power mosfet
Produkt ist nicht verfügbar
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IXTT40N50L2 IXTH(T,Q)40N50L2.pdf
IXTT40N50L2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO268
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: linear power mosfet
Produkt ist nicht verfügbar
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IXFH30N50P IXFH30N50P.pdf
IXFH30N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 30A; 460W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Technology: HiPerFET™; PolarHV™
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.44 EUR
8+9.57 EUR
9+8.92 EUR
10+7.91 EUR
Mindestbestellmenge: 7
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IXFH30N50Q3 IXFH30N50Q3.pdf
IXFH30N50Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO247-3; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 690W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate-source voltage: ±20V
Technology: HiPerFET™
Produkt ist nicht verfügbar
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IXTQ30N50L IXTH(Q,T)30N50L.pdf
IXTQ30N50L
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
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IXTT30N50L IXTH(Q,T)30N50L.pdf
IXTT30N50L
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
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IXTT30N50P IXTH(Q,T,V)30N50P_S.pdf
IXTT30N50P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
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