| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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| LAA100PLTR | IXYS |
 Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 25Ω Mounting: SMT Case: DIP8 Body dimensions: 9.66x6.35x2.16mm Insulation voltage: 3.75kV Turn-on time: 5ms Turn-off time: 5ms Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| LAA100PTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 25Ω Mounting: SMT Case: DIP8 Body dimensions: 9.66x6.35x2.16mm Insulation voltage: 3.75kV Turn-on time: 5ms Turn-off time: 5ms Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| LAA100LSTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 25Ω Mounting: SMT Case: DIP8 Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 5ms Turn-off time: 5ms Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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LAA100PL | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 25Ω Mounting: SMT Case: DIP8 Body dimensions: 9.66x6.35x2.16mm Insulation voltage: 3.75kV Turn-on time: 5ms Turn-off time: 5ms Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| LAA100STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 25Ω Mounting: SMT Case: DIP8 Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 5ms Turn-off time: 5ms Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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IXDN604SIA | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V Case: SO8 Mounting: SMD Kind of package: tube Output current: -4...4A Type of integrated circuit: driver Kind of output: non-inverting Operating temperature: -40...125°C Turn-on time: 81ns Turn-off time: 79ns Kind of integrated circuit: gate driver; low-side Number of channels: 2 Supply voltage: 4.5...35V |
auf Bestellung 494 Stücke: Lieferzeit 14-21 Tag (e) |
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IXDN609CI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V Case: TO220-5 Mounting: THT Kind of package: tube Output current: -9...9A Type of integrated circuit: driver Kind of output: non-inverting Operating temperature: -40...125°C Turn-on time: 115ns Turn-off time: 105ns Kind of integrated circuit: gate driver; low-side Number of channels: 1 Supply voltage: 4.5...35V |
auf Bestellung 1024 Stücke: Lieferzeit 14-21 Tag (e) |
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IXDN609YI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V Case: TO263-5 Mounting: SMD Kind of package: tube Output current: -9...9A Type of integrated circuit: driver Kind of output: non-inverting Operating temperature: -40...125°C Turn-on time: 115ns Turn-off time: 105ns Kind of integrated circuit: gate driver; low-side Number of channels: 1 Supply voltage: 4.5...35V |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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IXDN604SI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V Case: SO8-EP Mounting: SMD Kind of package: tube Output current: -4...4A Type of integrated circuit: driver Kind of output: non-inverting Operating temperature: -40...125°C Turn-on time: 81ns Turn-off time: 79ns Kind of integrated circuit: gate driver; low-side Number of channels: 2 Supply voltage: 4.5...35V |
auf Bestellung 878 Stücke: Lieferzeit 14-21 Tag (e) |
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IXDN604SIATR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V Case: SO8 Mounting: SMD Kind of package: reel; tape Output current: -4...4A Type of integrated circuit: driver Kind of output: non-inverting Operating temperature: -40...125°C Turn-on time: 81ns Turn-off time: 79ns Kind of integrated circuit: gate driver; low-side Number of channels: 2 Supply voltage: 4.5...35V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXDN604SITR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V Case: SO8-EP Mounting: SMD Kind of package: reel; tape Output current: -4...4A Type of integrated circuit: driver Kind of output: non-inverting Operating temperature: -40...125°C Turn-on time: 81ns Turn-off time: 79ns Kind of integrated circuit: gate driver; low-side Number of channels: 2 Supply voltage: 4.5...35V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| MCMA110PD1800TB | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.8kV; 110A; TO240AA; Ufmax: 1.5V Gate current: 150mA Max. forward voltage: 1.5V Load current: 110A Max. off-state voltage: 1.8kV Max. forward impulse current: 1.9kA Type of semiconductor module: diode-thyristor Case: TO240AA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 36 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| MCMA140PD1800TB | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.8kV; 140A; TO240AA; Ufmax: 1.5V; screw Gate current: 150mA Max. forward voltage: 1.5V Load current: 140A Max. off-state voltage: 1.8kV Type of semiconductor module: diode-thyristor Case: TO240AA Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 36 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| MCMA200PD1800YB | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.8kV; 200A; Y4-M6; Ufmax: 2.5V; Ifsm: 6kA Gate current: 150mA Max. forward voltage: 2.5V Load current: 200A Max. off-state voltage: 1.8kV Max. forward impulse current: 6kA Type of semiconductor module: diode-thyristor Case: Y4-M6 Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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IXXR100N60B3H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 100A; 400W; PLUS247™ Mounting: THT Case: PLUS247™ Kind of package: tube Turn-on time: 92ns Gate charge: 143nC Turn-off time: 350ns Gate-emitter voltage: ±20V Collector current: 100A Power dissipation: 400W Pulsed collector current: 440A Collector-emitter voltage: 600V Technology: GenX3™; Planar; XPT™ Type of transistor: IGBT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXFT150N30X3HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO268 Mounting: SMD Power dissipation: 890W Gate charge: 254nC Polarisation: unipolar Technology: HiPerFET™; X3-Class Drain current: 150A Kind of channel: enhancement Drain-source voltage: 300V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO268 On-state resistance: 8.3mΩ Reverse recovery time: 167ns |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH150N30X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO247-3 Mounting: THT Power dissipation: 890W Gate charge: 254nC Polarisation: unipolar Technology: HiPerFET™; X3-Class Drain current: 150A Kind of channel: enhancement Drain-source voltage: 300V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO247-3 On-state resistance: 8.3mΩ Reverse recovery time: 167ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXFK150N30X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO264 Mounting: THT Power dissipation: 890W Gate charge: 254nC Polarisation: unipolar Technology: HiPerFET™; X3-Class Drain current: 150A Kind of channel: enhancement Drain-source voltage: 300V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO264 On-state resistance: 8.3mΩ Reverse recovery time: 167ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| MMIX1F230N20T | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 200V; 156A; Idm: 630A Mounting: SMD Pulsed drain current: 630A Power dissipation: 600W Gate charge: 358nC Polarisation: unipolar Technology: GigaMOS™; HiPerFET™; Trench™ Drain current: 156A Kind of channel: enhancement Drain-source voltage: 200V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: SMPD On-state resistance: 8.3mΩ Reverse recovery time: 200ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| VUB135-22NO1 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.7kV; Ic: 80A Type of semiconductor module: IGBT Power dissipation: 445W Mechanical mounting: screw Pulsed collector current: 150A Application: Inverter Max. off-state voltage: 1.7kV Electrical mounting: Press-in PCB Semiconductor structure: diode/transistor Case: E2-Pack Gate-emitter voltage: ±20V Collector current: 80A Topology: buck chopper; NTC thermistor; three-phase diode bridge |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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IXTA44P15T-TRL | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; 150V; 44A; 298W; D2PAK Type of transistor: P-MOSFET Drain-source voltage: 150V Drain current: 44A Power dissipation: 298W Case: D2PAK Gate-source voltage: 15V On-state resistance: 65mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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LCA125 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC Type of relay: solid state Max. operating current: 0.17A Switched voltage: max. 300V AC; max. 300V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source Contacts configuration: SPST-NO Insulation voltage: 3.75kV Turn-on time: 5ms Case: DIP6 Turn-off time: 5ms Control current max.: 50mA On-state resistance: 16Ω Mounting: THT Kind of output: MOSFET Body dimensions: 8.38x6.35x3.3mm Operating temperature: -40...85°C |
auf Bestellung 98 Stücke: Lieferzeit 14-21 Tag (e) |
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LAA125S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS Type of relay: solid state Max. operating current: 0.17A Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source Contacts configuration: SPST-NO x2 Insulation voltage: 3.75kV Turn-on time: 5ms Case: DIP8 Turn-off time: 5ms Control current max.: 50mA On-state resistance: 16Ω Mounting: SMT Kind of output: MOSFET Body dimensions: 9.66x6.35x3.3mm Operating temperature: -40...85°C |
auf Bestellung 95 Stücke: Lieferzeit 14-21 Tag (e) |
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LCA125S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC Type of relay: solid state Max. operating current: 0.17A Switched voltage: max. 300V AC; max. 300V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source Contacts configuration: SPST-NO Insulation voltage: 3.75kV Turn-on time: 5ms Case: DIP6 Turn-off time: 5ms Control current max.: 50mA On-state resistance: 16Ω Mounting: SMT Kind of output: MOSFET Body dimensions: 8.38x6.35x3.3mm Operating temperature: -40...85°C |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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LAA125LS | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS Type of relay: solid state Max. operating current: 0.17A Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source Contacts configuration: SPST-NO x2 Insulation voltage: 3.75kV Turn-on time: 5ms Case: DIP8 Turn-off time: 5ms Control current max.: 50mA On-state resistance: 16Ω Mounting: SMT Kind of output: MOSFET Body dimensions: 9.66x6.35x3.3mm Operating temperature: -40...85°C |
auf Bestellung 63 Stücke: Lieferzeit 14-21 Tag (e) |
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LCA125L | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC Type of relay: solid state Max. operating current: 0.17A Switched voltage: max. 300V AC; max. 300V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source Contacts configuration: SPST-NO Insulation voltage: 3.75kV Turn-on time: 5ms Case: DIP6 Turn-off time: 5ms Control current max.: 50mA On-state resistance: 16Ω Mounting: THT Kind of output: MOSFET Body dimensions: 8.38x6.35x3.3mm Operating temperature: -40...85°C |
auf Bestellung 99 Stücke: Lieferzeit 14-21 Tag (e) |
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LAA125P | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS Type of relay: solid state Max. operating current: 0.17A Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source Contacts configuration: SPST-NO x2 Insulation voltage: 3.75kV Turn-on time: 5ms Case: DIP8 Turn-off time: 5ms Control current max.: 50mA On-state resistance: 16Ω Mounting: SMT Kind of output: MOSFET Body dimensions: 9.66x6.35x2.16mm Operating temperature: -40...85°C |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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LAA125PL | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS Type of relay: solid state Max. operating current: 0.17A Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source Contacts configuration: SPST-NO x2 Insulation voltage: 3.75kV Turn-on time: 5ms Case: DIP8 Turn-off time: 5ms Control current max.: 50mA On-state resistance: 16Ω Mounting: SMT Kind of output: MOSFET Body dimensions: 9.66x6.35x2.16mm Operating temperature: -40...85°C |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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LCA125LS | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC Type of relay: solid state Max. operating current: 0.17A Switched voltage: max. 300V AC; max. 300V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source Contacts configuration: SPST-NO Insulation voltage: 3.75kV Turn-on time: 5ms Case: DIP6 Turn-off time: 5ms Control current max.: 50mA On-state resistance: 16Ω Mounting: SMT Kind of output: MOSFET Body dimensions: 8.38x6.35x3.3mm Operating temperature: -40...85°C |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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| DSP25-12AT-TRL | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 25A; D3PAK,TO268AA; Ufmax: 1.23V Mounting: SMD Case: D3PAK; TO268AA Kind of package: reel; tape Max. forward impulse current: 325A Max. forward voltage: 1.23V Max. off-state voltage: 1.2kV Load current: 25A Type of diode: rectifying |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 400 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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DSEI25-06AS-TRL | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 25A; 50ns; D2PAK,TO263AB; FRED Mounting: SMD Case: D2PAK; TO263AB Kind of package: reel; tape Technology: FRED Max. off-state voltage: 0.6kV Load current: 25A Semiconductor structure: single diode Type of diode: rectifying Reverse recovery time: 50ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXFP26N30X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 26A; 170W; TO220AB On-state resistance: 66mΩ Reverse recovery time: 105ns Mounting: THT Power dissipation: 170W Gate charge: 22nC Polarisation: unipolar Technology: HiPerFET™; X3-Class Drain current: 26A Kind of channel: enhancement Drain-source voltage: 300V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO220AB |
auf Bestellung 208 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFP26N50P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO220AB On-state resistance: 0.25Ω Mounting: THT Power dissipation: 500W Gate charge: 42nC Polarisation: unipolar Drain current: 26A Kind of channel: enhancement Drain-source voltage: 500V Type of transistor: N-MOSFET Kind of package: tube Case: TO220AB |
auf Bestellung 258 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP08N120P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.8A; 50W; TO220AB; 900ns Mounting: THT Case: TO220AB Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Kind of package: tube On-state resistance: 25Ω Reverse recovery time: 900ns Power dissipation: 50W Gate charge: 14nC Polarisation: unipolar Features of semiconductor devices: standard power mosfet Drain current: 0.8A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXTA08N120P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 0.8A; 50W; TO263 Mounting: SMD Case: TO263 Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube On-state resistance: 25Ω Reverse recovery time: 900ns Power dissipation: 50W Gate charge: 14nC Polarisation: unipolar Technology: Polar™ Drain current: 0.8A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXGT16N170A | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 11A Power dissipation: 190W Case: TO268 Gate-emitter voltage: ±20V Pulsed collector current: 40A Mounting: SMD Gate charge: 70nC Kind of package: tube Turn-on time: 35ns Turn-off time: 298ns Features of semiconductor devices: high voltage |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXGT16N170AH1 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 11A Power dissipation: 190W Case: TO268 Gate-emitter voltage: ±20V Pulsed collector current: 40A Mounting: SMD Gate charge: 70nC Kind of package: tube Turn-on time: 35ns Turn-off time: 298ns Features of semiconductor devices: high voltage |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXTQ140N10P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 140A Power dissipation: 600W Case: TO3P Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: THT Gate charge: 155nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 120ns Technology: PolarHT™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXTT140N10P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 140A Power dissipation: 600W Case: TO268 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 155nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 120ns Technology: PolarHT™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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LDA100STR | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; Uinsul: 3.75kV; CTR@If: 33-300%@1mA; 50mA Number of channels: 1 Mounting: SMD Trigger current: 50mA Collector-emitter voltage: 30V CTR@If: 33-300%@1mA Insulation voltage: 3.75kV Type of optocoupler: optocoupler Turn-on time: 7µs Turn-off time: 20µs |
auf Bestellung 720 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTA200N055T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 200A; 360W; TO263; 49ns Mounting: SMD Power dissipation: 360W Gate charge: 109nC Polarisation: unipolar Features of semiconductor devices: thrench gate power mosfet Drain current: 200A Kind of channel: enhancement Drain-source voltage: 55V Type of transistor: N-MOSFET Kind of package: tube Case: TO263 On-state resistance: 4.2mΩ Reverse recovery time: 49ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXTA64N10L2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 64A; 357W; TO263; 180ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 64A Power dissipation: 357W Case: TO263 On-state resistance: 32mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Reverse recovery time: 180ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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LAA127S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; OptoMOS Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Contacts configuration: SPST-NO x2 Insulation voltage: 3.75kV Turn-on time: 5ms Switched voltage: max. 250V AC; max. 250V DC Case: DIP8 Max. operating current: 200mA Turn-off time: 5ms Control current max.: 50mA On-state resistance: 10Ω Type of relay: solid state Mounting: SMT Manufacturer series: OptoMOS Relay variant: 1-phase; current source Kind of output: MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| LAA127STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; OptoMOS Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Contacts configuration: SPST-NO x2 Insulation voltage: 3.75kV Turn-on time: 5ms Switched voltage: max. 250V AC; max. 250V DC Case: DIP8 Max. operating current: 200mA Turn-off time: 5ms Control current max.: 50mA On-state resistance: 10Ω Type of relay: solid state Mounting: SMT Manufacturer series: OptoMOS Relay variant: 1-phase; current source Kind of output: MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| LBA127STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Contacts configuration: SPST-NO + SPST-NC Insulation voltage: 3.75kV Turn-on time: 5ms Switched voltage: max. 250V AC; max. 250V DC Case: DIP8 Max. operating current: 200mA Turn-off time: 5ms Control current max.: 50mA On-state resistance: 10Ω Type of relay: solid state Mounting: SMT Manufacturer series: OptoMOS Relay variant: 1-phase; current source |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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LBB127S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 200mA; OptoMOS Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Contacts configuration: SPST-NC x2 Insulation voltage: 3.75kV Turn-on time: 5ms Switched voltage: max. 250V AC; max. 250V DC Case: DIP8 Max. operating current: 200mA Turn-off time: 5ms Control current max.: 50mA On-state resistance: 10Ω Type of relay: solid state Mounting: SMT Manufacturer series: OptoMOS Relay variant: 1-phase; current source Kind of output: MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| LBB127STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 200mA; OptoMOS Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Contacts configuration: SPST-NC x2 Insulation voltage: 3.75kV Turn-on time: 5ms Switched voltage: max. 250V AC; max. 250V DC Case: DIP8 Max. operating current: 200mA Turn-off time: 5ms Control current max.: 50mA On-state resistance: 10Ω Type of relay: solid state Mounting: SMT Manufacturer series: OptoMOS Relay variant: 1-phase; current source Kind of output: MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| LCA127STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.350VAC Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Contacts configuration: SPST-NO Insulation voltage: 3.75kV Turn-on time: 5ms Switched voltage: max. 350V AC; max. 350V DC Case: DIP6 Max. operating current: 200mA Turn-off time: 5ms Control current max.: 50mA On-state resistance: 10Ω Type of relay: solid state Mounting: SMT Manufacturer series: OptoMOS Relay variant: 1-phase; current source Kind of output: MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| LCB127STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 200mA; max.250VAC Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Contacts configuration: SPST-NC Insulation voltage: 3.75kV Turn-on time: 5ms Switched voltage: max. 250V AC; max. 250V DC Case: DIP6 Max. operating current: 200mA Turn-off time: 5ms Control current max.: 50mA On-state resistance: 10Ω Type of relay: solid state Mounting: SMT Manufacturer series: OptoMOS Relay variant: 1-phase; current source Kind of output: MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| PAA127STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; OptoMOS Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Contacts configuration: SPST-NO x2 Insulation voltage: 3.75kV Turn-on time: 500µs Switched voltage: max. 280V AC; max. 280V DC Case: DIP8 Max. operating current: 200mA Turn-off time: 0.5ms Control current max.: 50mA On-state resistance: 10Ω Type of relay: solid state Mounting: SMT Manufacturer series: OptoMOS Relay variant: 1-phase; current source Kind of output: MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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IXGH25N160 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.6kV; 25A; 300W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.6kV Collector current: 25A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 84nC Kind of package: tube Turn-on time: 283ns Turn-off time: 526ns Features of semiconductor devices: high voltage |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MMIX2F60N50P3 | IXYS |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; Polar3™; unipolar; 500V; 30A; Idm: 150A Type of transistor: N-MOSFET x2 Technology: HiPerFET™; Polar3™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Pulsed drain current: 150A Power dissipation: 320W Case: SMPD Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 96nC Kind of channel: enhancement Reverse recovery time: 250ns |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTN60N50L2 | IXYS |
Category: Transistor drivers Description: Module; single transistor; 500V; 53A; SOT227B; screw; Idm: 150A Technology: Linear L2™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 53A Pulsed drain current: 150A Power dissipation: 735W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.1Ω Gate charge: 610nC Kind of channel: enhancement Reverse recovery time: 980ns Semiconductor structure: single transistor Type of semiconductor module: MOSFET transistor Mechanical mounting: screw Electrical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXTK60N50L2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; TO264; 980ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 60A Power dissipation: 960W Case: TO264 On-state resistance: 0.1Ω Mounting: THT Gate charge: 610nC Kind of channel: enhancement Reverse recovery time: 980ns Kind of package: tube Features of semiconductor devices: linear power mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXFQ60N50P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 1040W; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 60A Power dissipation: 1.04kW Case: TO3P On-state resistance: 0.11Ω Mounting: THT Gate charge: 96nC Kind of channel: enhancement Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXTX60N50L2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; PLUS247™; 980ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 60A Power dissipation: 960W Case: PLUS247™ On-state resistance: 0.1Ω Mounting: THT Gate charge: 610nC Kind of channel: enhancement Reverse recovery time: 980ns Kind of package: tube Features of semiconductor devices: linear power mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXGH16N170 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 16A; 190W; TO247-3 Mounting: THT Collector-emitter voltage: 1.7kV Power dissipation: 190W Gate charge: 78nC Technology: NPT Features of semiconductor devices: high voltage Pulsed collector current: 80A Type of transistor: IGBT Turn-on time: 90ns Kind of package: tube Case: TO247-3 Turn-off time: 1.6µs Gate-emitter voltage: ±20V Collector current: 16A |
auf Bestellung 218 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFP16N50P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Power dissipation: 330W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: THT Gate charge: 29nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 250ns Technology: HiPerFET™; Polar3™ |
auf Bestellung 199 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFP16N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Power dissipation: 300W Case: TO220AB On-state resistance: 0.4Ω Mounting: THT Gate charge: 43nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 284 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP16N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 500V; 16A; 300W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Power dissipation: 300W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.4Ω Mounting: THT Gate charge: 43nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 400ns Technology: PolarHT™ |
auf Bestellung 230 Stücke: Lieferzeit 14-21 Tag (e) |
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| LAA100PLTR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| LAA100PTR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| LAA100LSTR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| LAA100PL |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LAA100STR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXDN604SIA |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Case: SO8
Mounting: SMD
Kind of package: tube
Output current: -4...4A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Turn-on time: 81ns
Turn-off time: 79ns
Kind of integrated circuit: gate driver; low-side
Number of channels: 2
Supply voltage: 4.5...35V
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Case: SO8
Mounting: SMD
Kind of package: tube
Output current: -4...4A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Turn-on time: 81ns
Turn-off time: 79ns
Kind of integrated circuit: gate driver; low-side
Number of channels: 2
Supply voltage: 4.5...35V
auf Bestellung 494 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 35+ | 2.46 EUR |
| 47+ | 1.82 EUR |
| 50+ | 1.7 EUR |
| 52+ | 1.65 EUR |
| 100+ | 1.62 EUR |
| IXDN609CI |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Case: TO220-5
Mounting: THT
Kind of package: tube
Output current: -9...9A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Turn-on time: 115ns
Turn-off time: 105ns
Kind of integrated circuit: gate driver; low-side
Number of channels: 1
Supply voltage: 4.5...35V
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Case: TO220-5
Mounting: THT
Kind of package: tube
Output current: -9...9A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Turn-on time: 115ns
Turn-off time: 105ns
Kind of integrated circuit: gate driver; low-side
Number of channels: 1
Supply voltage: 4.5...35V
auf Bestellung 1024 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 19+ | 4.5 EUR |
| 26+ | 3.37 EUR |
| 28+ | 3.15 EUR |
| IXDN609YI |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Case: TO263-5
Mounting: SMD
Kind of package: tube
Output current: -9...9A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Turn-on time: 115ns
Turn-off time: 105ns
Kind of integrated circuit: gate driver; low-side
Number of channels: 1
Supply voltage: 4.5...35V
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Case: TO263-5
Mounting: SMD
Kind of package: tube
Output current: -9...9A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Turn-on time: 115ns
Turn-off time: 105ns
Kind of integrated circuit: gate driver; low-side
Number of channels: 1
Supply voltage: 4.5...35V
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 4.39 EUR |
| 23+ | 3.71 EUR |
| 50+ | 3.15 EUR |
| 100+ | 2.96 EUR |
| IXDN604SI |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Case: SO8-EP
Mounting: SMD
Kind of package: tube
Output current: -4...4A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Turn-on time: 81ns
Turn-off time: 79ns
Kind of integrated circuit: gate driver; low-side
Number of channels: 2
Supply voltage: 4.5...35V
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Case: SO8-EP
Mounting: SMD
Kind of package: tube
Output current: -4...4A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Turn-on time: 81ns
Turn-off time: 79ns
Kind of integrated circuit: gate driver; low-side
Number of channels: 2
Supply voltage: 4.5...35V
auf Bestellung 878 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 23+ | 3.8 EUR |
| 50+ | 3.21 EUR |
| 100+ | 3 EUR |
| 200+ | 2.8 EUR |
| 300+ | 2.74 EUR |
| IXDN604SIATR |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Output current: -4...4A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Turn-on time: 81ns
Turn-off time: 79ns
Kind of integrated circuit: gate driver; low-side
Number of channels: 2
Supply voltage: 4.5...35V
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Output current: -4...4A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Turn-on time: 81ns
Turn-off time: 79ns
Kind of integrated circuit: gate driver; low-side
Number of channels: 2
Supply voltage: 4.5...35V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXDN604SITR |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Case: SO8-EP
Mounting: SMD
Kind of package: reel; tape
Output current: -4...4A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Turn-on time: 81ns
Turn-off time: 79ns
Kind of integrated circuit: gate driver; low-side
Number of channels: 2
Supply voltage: 4.5...35V
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Case: SO8-EP
Mounting: SMD
Kind of package: reel; tape
Output current: -4...4A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Turn-on time: 81ns
Turn-off time: 79ns
Kind of integrated circuit: gate driver; low-side
Number of channels: 2
Supply voltage: 4.5...35V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| MCMA110PD1800TB |
|
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 110A; TO240AA; Ufmax: 1.5V
Gate current: 150mA
Max. forward voltage: 1.5V
Load current: 110A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 1.9kA
Type of semiconductor module: diode-thyristor
Case: TO240AA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 110A; TO240AA; Ufmax: 1.5V
Gate current: 150mA
Max. forward voltage: 1.5V
Load current: 110A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 1.9kA
Type of semiconductor module: diode-thyristor
Case: TO240AA
Produkt ist nicht verfügbar
Mindestbestellmenge: 36 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MCMA140PD1800TB |
|
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 140A; TO240AA; Ufmax: 1.5V; screw
Gate current: 150mA
Max. forward voltage: 1.5V
Load current: 140A
Max. off-state voltage: 1.8kV
Type of semiconductor module: diode-thyristor
Case: TO240AA
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 140A; TO240AA; Ufmax: 1.5V; screw
Gate current: 150mA
Max. forward voltage: 1.5V
Load current: 140A
Max. off-state voltage: 1.8kV
Type of semiconductor module: diode-thyristor
Case: TO240AA
Mechanical mounting: screw
Produkt ist nicht verfügbar
Mindestbestellmenge: 36 Stücke
Im Einkaufswagen
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| MCMA200PD1800YB |
|
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 200A; Y4-M6; Ufmax: 2.5V; Ifsm: 6kA
Gate current: 150mA
Max. forward voltage: 2.5V
Load current: 200A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 6kA
Type of semiconductor module: diode-thyristor
Case: Y4-M6
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 200A; Y4-M6; Ufmax: 2.5V; Ifsm: 6kA
Gate current: 150mA
Max. forward voltage: 2.5V
Load current: 200A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 6kA
Type of semiconductor module: diode-thyristor
Case: Y4-M6
Mechanical mounting: screw
Produkt ist nicht verfügbar
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXXR100N60B3H1 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 400W; PLUS247™
Mounting: THT
Case: PLUS247™
Kind of package: tube
Turn-on time: 92ns
Gate charge: 143nC
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 100A
Power dissipation: 400W
Pulsed collector current: 440A
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 400W; PLUS247™
Mounting: THT
Case: PLUS247™
Kind of package: tube
Turn-on time: 92ns
Gate charge: 143nC
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 100A
Power dissipation: 400W
Pulsed collector current: 440A
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFT150N30X3HV |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO268
Mounting: SMD
Power dissipation: 890W
Gate charge: 254nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 150A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO268
On-state resistance: 8.3mΩ
Reverse recovery time: 167ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO268
Mounting: SMD
Power dissipation: 890W
Gate charge: 254nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 150A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO268
On-state resistance: 8.3mΩ
Reverse recovery time: 167ns
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 25.93 EUR |
| 5+ | 24.78 EUR |
| IXFH150N30X3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO247-3
Mounting: THT
Power dissipation: 890W
Gate charge: 254nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 150A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO247-3
On-state resistance: 8.3mΩ
Reverse recovery time: 167ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO247-3
Mounting: THT
Power dissipation: 890W
Gate charge: 254nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 150A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO247-3
On-state resistance: 8.3mΩ
Reverse recovery time: 167ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFK150N30X3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO264
Mounting: THT
Power dissipation: 890W
Gate charge: 254nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 150A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO264
On-state resistance: 8.3mΩ
Reverse recovery time: 167ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO264
Mounting: THT
Power dissipation: 890W
Gate charge: 254nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 150A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO264
On-state resistance: 8.3mΩ
Reverse recovery time: 167ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMIX1F230N20T |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 200V; 156A; Idm: 630A
Mounting: SMD
Pulsed drain current: 630A
Power dissipation: 600W
Gate charge: 358nC
Polarisation: unipolar
Technology: GigaMOS™; HiPerFET™; Trench™
Drain current: 156A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SMPD
On-state resistance: 8.3mΩ
Reverse recovery time: 200ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 200V; 156A; Idm: 630A
Mounting: SMD
Pulsed drain current: 630A
Power dissipation: 600W
Gate charge: 358nC
Polarisation: unipolar
Technology: GigaMOS™; HiPerFET™; Trench™
Drain current: 156A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SMPD
On-state resistance: 8.3mΩ
Reverse recovery time: 200ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| VUB135-22NO1 |
|
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.7kV; Ic: 80A
Type of semiconductor module: IGBT
Power dissipation: 445W
Mechanical mounting: screw
Pulsed collector current: 150A
Application: Inverter
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Case: E2-Pack
Gate-emitter voltage: ±20V
Collector current: 80A
Topology: buck chopper; NTC thermistor; three-phase diode bridge
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.7kV; Ic: 80A
Type of semiconductor module: IGBT
Power dissipation: 445W
Mechanical mounting: screw
Pulsed collector current: 150A
Application: Inverter
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Case: E2-Pack
Gate-emitter voltage: ±20V
Collector current: 80A
Topology: buck chopper; NTC thermistor; three-phase diode bridge
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTA44P15T-TRL |
|
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 150V; 44A; 298W; D2PAK
Type of transistor: P-MOSFET
Drain-source voltage: 150V
Drain current: 44A
Power dissipation: 298W
Case: D2PAK
Gate-source voltage: 15V
On-state resistance: 65mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 150V; 44A; 298W; D2PAK
Type of transistor: P-MOSFET
Drain-source voltage: 150V
Drain current: 44A
Power dissipation: 298W
Case: D2PAK
Gate-source voltage: 15V
On-state resistance: 65mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| LCA125 |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 300V AC; max. 300V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP6
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: THT
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 300V AC; max. 300V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP6
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: THT
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 9.17 EUR |
| 12+ | 7.21 EUR |
| LAA125S |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: SMT
Kind of output: MOSFET
Body dimensions: 9.66x6.35x3.3mm
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: SMT
Kind of output: MOSFET
Body dimensions: 9.66x6.35x3.3mm
Operating temperature: -40...85°C
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 9.9 EUR |
| 50+ | 8.28 EUR |
| LCA125S |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 300V AC; max. 300V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP6
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: SMT
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 300V AC; max. 300V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP6
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: SMT
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 13.03 EUR |
| 50+ | 8.54 EUR |
| 100+ | 6.88 EUR |
| LAA125LS |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: SMT
Kind of output: MOSFET
Body dimensions: 9.66x6.35x3.3mm
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: SMT
Kind of output: MOSFET
Body dimensions: 9.66x6.35x3.3mm
Operating temperature: -40...85°C
auf Bestellung 63 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 13.07 EUR |
| 10+ | 10.46 EUR |
| LCA125L |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 300V AC; max. 300V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP6
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: THT
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 300V AC; max. 300V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP6
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: THT
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
auf Bestellung 99 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 13.24 EUR |
| 50+ | 8.68 EUR |
| LAA125P |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: SMT
Kind of output: MOSFET
Body dimensions: 9.66x6.35x2.16mm
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: SMT
Kind of output: MOSFET
Body dimensions: 9.66x6.35x2.16mm
Operating temperature: -40...85°C
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 10.36 EUR |
| 100+ | 8.31 EUR |
| LAA125PL |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: SMT
Kind of output: MOSFET
Body dimensions: 9.66x6.35x2.16mm
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: SMT
Kind of output: MOSFET
Body dimensions: 9.66x6.35x2.16mm
Operating temperature: -40...85°C
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 17.97 EUR |
| 50+ | 11.78 EUR |
| 100+ | 9.42 EUR |
| LCA125LS |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 300V AC; max. 300V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP6
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: SMT
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 300V AC; max. 300V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP6
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: SMT
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 13.24 EUR |
| 50+ | 8.68 EUR |
| 100+ | 6.97 EUR |
| DSP25-12AT-TRL |
|
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 25A; D3PAK,TO268AA; Ufmax: 1.23V
Mounting: SMD
Case: D3PAK; TO268AA
Kind of package: reel; tape
Max. forward impulse current: 325A
Max. forward voltage: 1.23V
Max. off-state voltage: 1.2kV
Load current: 25A
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 25A; D3PAK,TO268AA; Ufmax: 1.23V
Mounting: SMD
Case: D3PAK; TO268AA
Kind of package: reel; tape
Max. forward impulse current: 325A
Max. forward voltage: 1.23V
Max. off-state voltage: 1.2kV
Load current: 25A
Type of diode: rectifying
Produkt ist nicht verfügbar
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| DSEI25-06AS-TRL |
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 25A; 50ns; D2PAK,TO263AB; FRED
Mounting: SMD
Case: D2PAK; TO263AB
Kind of package: reel; tape
Technology: FRED
Max. off-state voltage: 0.6kV
Load current: 25A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 50ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 25A; 50ns; D2PAK,TO263AB; FRED
Mounting: SMD
Case: D2PAK; TO263AB
Kind of package: reel; tape
Technology: FRED
Max. off-state voltage: 0.6kV
Load current: 25A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 50ns
Produkt ist nicht verfügbar
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| IXFP26N30X3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 26A; 170W; TO220AB
On-state resistance: 66mΩ
Reverse recovery time: 105ns
Mounting: THT
Power dissipation: 170W
Gate charge: 22nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 26A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 26A; 170W; TO220AB
On-state resistance: 66mΩ
Reverse recovery time: 105ns
Mounting: THT
Power dissipation: 170W
Gate charge: 22nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 26A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
auf Bestellung 208 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 19+ | 4.52 EUR |
| 25+ | 3.49 EUR |
| IXFP26N50P3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO220AB
On-state resistance: 0.25Ω
Mounting: THT
Power dissipation: 500W
Gate charge: 42nC
Polarisation: unipolar
Drain current: 26A
Kind of channel: enhancement
Drain-source voltage: 500V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO220AB
On-state resistance: 0.25Ω
Mounting: THT
Power dissipation: 500W
Gate charge: 42nC
Polarisation: unipolar
Drain current: 26A
Kind of channel: enhancement
Drain-source voltage: 500V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
auf Bestellung 258 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 11.23 EUR |
| 50+ | 9.07 EUR |
| IXTP08N120P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.8A; 50W; TO220AB; 900ns
Mounting: THT
Case: TO220AB
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Kind of package: tube
On-state resistance: 25Ω
Reverse recovery time: 900ns
Power dissipation: 50W
Gate charge: 14nC
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 0.8A
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.8A; 50W; TO220AB; 900ns
Mounting: THT
Case: TO220AB
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Kind of package: tube
On-state resistance: 25Ω
Reverse recovery time: 900ns
Power dissipation: 50W
Gate charge: 14nC
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 0.8A
Kind of channel: enhancement
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| IXTA08N120P |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 0.8A; 50W; TO263
Mounting: SMD
Case: TO263
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
On-state resistance: 25Ω
Reverse recovery time: 900ns
Power dissipation: 50W
Gate charge: 14nC
Polarisation: unipolar
Technology: Polar™
Drain current: 0.8A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 0.8A; 50W; TO263
Mounting: SMD
Case: TO263
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
On-state resistance: 25Ω
Reverse recovery time: 900ns
Power dissipation: 50W
Gate charge: 14nC
Polarisation: unipolar
Technology: Polar™
Drain current: 0.8A
Kind of channel: enhancement
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| IXGT16N170A |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 11A
Power dissipation: 190W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Turn-on time: 35ns
Turn-off time: 298ns
Features of semiconductor devices: high voltage
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 11A
Power dissipation: 190W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Turn-on time: 35ns
Turn-off time: 298ns
Features of semiconductor devices: high voltage
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| IXGT16N170AH1 |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 11A
Power dissipation: 190W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Turn-on time: 35ns
Turn-off time: 298ns
Features of semiconductor devices: high voltage
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 11A
Power dissipation: 190W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Turn-on time: 35ns
Turn-off time: 298ns
Features of semiconductor devices: high voltage
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| IXTQ140N10P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
Technology: PolarHT™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
Technology: PolarHT™
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| IXTT140N10P |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
Technology: PolarHT™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
Technology: PolarHT™
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| LDA100STR |
|
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; Uinsul: 3.75kV; CTR@If: 33-300%@1mA; 50mA
Number of channels: 1
Mounting: SMD
Trigger current: 50mA
Collector-emitter voltage: 30V
CTR@If: 33-300%@1mA
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Turn-on time: 7µs
Turn-off time: 20µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; Uinsul: 3.75kV; CTR@If: 33-300%@1mA; 50mA
Number of channels: 1
Mounting: SMD
Trigger current: 50mA
Collector-emitter voltage: 30V
CTR@If: 33-300%@1mA
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Turn-on time: 7µs
Turn-off time: 20µs
auf Bestellung 720 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 73+ | 1.18 EUR |
| 86+ | 0.99 EUR |
| 100+ | 0.86 EUR |
| 400+ | 0.77 EUR |
| 500+ | 0.76 EUR |
| IXTA200N055T2 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 200A; 360W; TO263; 49ns
Mounting: SMD
Power dissipation: 360W
Gate charge: 109nC
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 200A
Kind of channel: enhancement
Drain-source voltage: 55V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO263
On-state resistance: 4.2mΩ
Reverse recovery time: 49ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 200A; 360W; TO263; 49ns
Mounting: SMD
Power dissipation: 360W
Gate charge: 109nC
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 200A
Kind of channel: enhancement
Drain-source voltage: 55V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO263
On-state resistance: 4.2mΩ
Reverse recovery time: 49ns
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| IXTA64N10L2 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 64A; 357W; TO263; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 64A
Power dissipation: 357W
Case: TO263
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 180ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 64A; 357W; TO263; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 64A
Power dissipation: 357W
Case: TO263
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 180ns
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| LAA127S |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP8
Max. operating current: 200mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP8
Max. operating current: 200mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Produkt ist nicht verfügbar
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| LAA127STR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP8
Max. operating current: 200mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP8
Max. operating current: 200mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| LBA127STR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Contacts configuration: SPST-NO + SPST-NC
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP8
Max. operating current: 200mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Contacts configuration: SPST-NO + SPST-NC
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP8
Max. operating current: 200mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| LBB127S |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 200mA; OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Contacts configuration: SPST-NC x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP8
Max. operating current: 200mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 200mA; OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Contacts configuration: SPST-NC x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP8
Max. operating current: 200mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LBB127STR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 200mA; OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Contacts configuration: SPST-NC x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP8
Max. operating current: 200mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 200mA; OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Contacts configuration: SPST-NC x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP8
Max. operating current: 200mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| LCA127STR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.350VAC
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP6
Max. operating current: 200mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.350VAC
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP6
Max. operating current: 200mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| LCB127STR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 200mA; max.250VAC
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Contacts configuration: SPST-NC
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP6
Max. operating current: 200mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 200mA; max.250VAC
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Contacts configuration: SPST-NC
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP6
Max. operating current: 200mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| PAA127STR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 500µs
Switched voltage: max. 280V AC; max. 280V DC
Case: DIP8
Max. operating current: 200mA
Turn-off time: 0.5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 500µs
Switched voltage: max. 280V AC; max. 280V DC
Case: DIP8
Max. operating current: 200mA
Turn-off time: 0.5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXGH25N160 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.6kV; 25A; 300W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.6kV
Collector current: 25A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Turn-on time: 283ns
Turn-off time: 526ns
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.6kV; 25A; 300W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.6kV
Collector current: 25A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Turn-on time: 283ns
Turn-off time: 526ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMIX2F60N50P3 |
|
Hersteller: IXYS
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Polar3™; unipolar; 500V; 30A; Idm: 150A
Type of transistor: N-MOSFET x2
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 150A
Power dissipation: 320W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 96nC
Kind of channel: enhancement
Reverse recovery time: 250ns
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Polar3™; unipolar; 500V; 30A; Idm: 150A
Type of transistor: N-MOSFET x2
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 150A
Power dissipation: 320W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 96nC
Kind of channel: enhancement
Reverse recovery time: 250ns
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 56.63 EUR |
| 3+ | 49.96 EUR |
| 10+ | 44.92 EUR |
| 20+ | 41.94 EUR |
| IXTN60N50L2 |
|
Hersteller: IXYS
Category: Transistor drivers
Description: Module; single transistor; 500V; 53A; SOT227B; screw; Idm: 150A
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 53A
Pulsed drain current: 150A
Power dissipation: 735W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.1Ω
Gate charge: 610nC
Kind of channel: enhancement
Reverse recovery time: 980ns
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Category: Transistor drivers
Description: Module; single transistor; 500V; 53A; SOT227B; screw; Idm: 150A
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 53A
Pulsed drain current: 150A
Power dissipation: 735W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.1Ω
Gate charge: 610nC
Kind of channel: enhancement
Reverse recovery time: 980ns
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTK60N50L2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; TO264; 980ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 960W
Case: TO264
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 610nC
Kind of channel: enhancement
Reverse recovery time: 980ns
Kind of package: tube
Features of semiconductor devices: linear power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; TO264; 980ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 960W
Case: TO264
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 610nC
Kind of channel: enhancement
Reverse recovery time: 980ns
Kind of package: tube
Features of semiconductor devices: linear power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFQ60N50P3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 1040W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO3P
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 96nC
Kind of channel: enhancement
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 1040W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO3P
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 96nC
Kind of channel: enhancement
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTX60N50L2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; PLUS247™; 980ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 610nC
Kind of channel: enhancement
Reverse recovery time: 980ns
Kind of package: tube
Features of semiconductor devices: linear power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; PLUS247™; 980ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 610nC
Kind of channel: enhancement
Reverse recovery time: 980ns
Kind of package: tube
Features of semiconductor devices: linear power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXGH16N170 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 16A; 190W; TO247-3
Mounting: THT
Collector-emitter voltage: 1.7kV
Power dissipation: 190W
Gate charge: 78nC
Technology: NPT
Features of semiconductor devices: high voltage
Pulsed collector current: 80A
Type of transistor: IGBT
Turn-on time: 90ns
Kind of package: tube
Case: TO247-3
Turn-off time: 1.6µs
Gate-emitter voltage: ±20V
Collector current: 16A
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 16A; 190W; TO247-3
Mounting: THT
Collector-emitter voltage: 1.7kV
Power dissipation: 190W
Gate charge: 78nC
Technology: NPT
Features of semiconductor devices: high voltage
Pulsed collector current: 80A
Type of transistor: IGBT
Turn-on time: 90ns
Kind of package: tube
Case: TO247-3
Turn-off time: 1.6µs
Gate-emitter voltage: ±20V
Collector current: 16A
auf Bestellung 218 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 17.48 EUR |
| 6+ | 15.39 EUR |
| 10+ | 14.17 EUR |
| 30+ | 12.26 EUR |
| 60+ | 12.19 EUR |
| IXFP16N50P3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar3™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar3™
auf Bestellung 199 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 6.1 EUR |
| 17+ | 5.21 EUR |
| 50+ | 4.59 EUR |
| 100+ | 4.34 EUR |
| IXFP16N50P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 284 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 5.83 EUR |
| 16+ | 5.36 EUR |
| 50+ | 4.31 EUR |
| IXTP16N50P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 500V; 16A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Technology: PolarHT™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 500V; 16A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Technology: PolarHT™
auf Bestellung 230 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 6.08 EUR |
| 23+ | 3.83 EUR |
| 50+ | 3.69 EUR |