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IXFT16N80P IXFT16N80P IXYS IXFH16N80P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 16A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 16A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
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IXFK180N15P IXFK180N15P IXYS IXFK180N15P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 180A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 180A
Power dissipation: 830W
Case: TO264
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DCG20B650LB-TUB IXYS Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 650V; 16A; SMPD-B; SMT; tube
Type of bridge rectifier: single-phase
Max. off-state voltage: 650V
Load current: 16A
Case: SMPD-B
Electrical mounting: SMT
Kind of package: tube
Max. forward voltage: 2V
Features of semiconductor devices: Schottky
Technology: SiC
Produkt ist nicht verfügbar
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PLA150S PLA150S IXYS PLA150.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.250VAC
Mounting: SMT
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP6
Max. operating current: 250mA
Turn-off time: 0.5ms
Control current max.: 50mA
On-state resistance: 7Ω
Type of relay: solid state
Manufacturer series: OptoMOS
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PLA150 PLA150 IXYS PLA150.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.250VAC
Mounting: THT
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP6
Max. operating current: 250mA
Turn-off time: 0.5ms
Control current max.: 50mA
On-state resistance: 7Ω
Type of relay: solid state
Manufacturer series: OptoMOS
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PLB150S PLB150S IXYS PLB150.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 250mA; max.250VAC
Mounting: SMT
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NC
Insulation voltage: 3.75kV
Turn-on time: 1ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP6
Max. operating current: 250mA
Turn-off time: 2.5ms
Control current max.: 50mA
On-state resistance: 7Ω
Type of relay: solid state
Manufacturer series: OptoMOS
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PAA191 PAA191 IXYS PAA191.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Mounting: THT
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
Insulation voltage: 5kV
Turn-on time: 3ms
Switched voltage: max. 400V AC; max. 400V DC
Case: DIP8
Max. operating current: 250mA
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
Type of relay: solid state
Manufacturer series: OptoMOS
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PBA150S PBA150S IXYS PBA150.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 250mA
Mounting: SMT
Relay variant: 1-phase; current source
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO + SPST-NC
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP8
Max. operating current: 250mA
Turn-off time: 2.5ms
Control current max.: 50mA
On-state resistance: 7Ω
Type of relay: solid state
Manufacturer series: OptoMOS
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IXXK200N60C3 IXXK200N60C3 IXYS IXXK(X)200N60C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 200A; 1.63kW; TO264
Type of transistor: IGBT
Collector current: 200A
Mounting: THT
Collector-emitter voltage: 600V
Power dissipation: 1.63kW
Gate charge: 315nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 900A
Turn-on time: 143ns
Kind of package: tube
Case: TO264
Turn-off time: 240ns
Gate-emitter voltage: ±20V
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IXXX300N60C3 IXXX300N60C3 IXYS IXXK(x)300N60C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; PLUS247™
Type of transistor: IGBT
Collector current: 300A
Mounting: THT
Collector-emitter voltage: 600V
Power dissipation: 2.3kW
Gate charge: 438nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 1075A
Turn-on time: 128ns
Kind of package: tube
Case: PLUS247™
Turn-off time: 278ns
Gate-emitter voltage: ±20V
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IXTA02N250HV IXTA02N250HV IXYS IXTA(T)02N250HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 0.2A; 83W; TO263; 1.5us
Reverse recovery time: 1.5µs
Mounting: SMD
Power dissipation: 83W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 0.2A
Kind of channel: enhancement
Drain-source voltage: 2.5kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO263
On-state resistance: 450Ω
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IXTH02N250 IXTH02N250 IXYS IXTH02N250.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 0.2A; 83W; TO247-3; 1.5us
Power dissipation: 83W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 0.2A
Kind of channel: enhancement
Drain-source voltage: 2.5kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO247-3
On-state resistance: 450Ω
Reverse recovery time: 1.5µs
Mounting: THT
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IXTQ470P2 IXTQ470P2 IXYS IXTQ470P2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO3P; 400ns
Case: TO3P
Mounting: THT
On-state resistance: 0.145Ω
Kind of package: tube
Power dissipation: 830W
Gate charge: 88nC
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 42A
Kind of channel: enhancement
Drain-source voltage: 500V
Type of transistor: N-MOSFET
Reverse recovery time: 400ns
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IXTQ120N15P IXTQ120N15P IXYS IXTQ120N15P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO3P
On-state resistance: 16mΩ
Reverse recovery time: 150ns
Mounting: THT
Power dissipation: 600W
Gate charge: 150nC
Polarisation: unipolar
Technology: PolarHT™
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO3P
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IXXH75N60B3D1 IXXH75N60B3D1 IXYS IXXH75N60B3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 750W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Turn-on time: 108ns
Turn-off time: 315ns
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CPC3960ZTR CPC3960ZTR IXYS CPC3960.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.1A; 1.8W; SOT223
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±15V
On-state resistance: 44Ω
Power dissipation: 1.8W
Polarisation: unipolar
Drain current: 0.1A
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113+0.75 EUR
134+0.63 EUR
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IXFP38N30X3M IXFP38N30X3M IXYS IXFP38N30X3M.pdf 300VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 38A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
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IXFB210N20P IXFB210N20P IXYS IXFB210N20P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 210A; 1500W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.5kW
Case: PLUS264™
Mounting: THT
Gate charge: 255nC
Technology: HiPerFET™; Polar™
Drain current: 210A
Kind of channel: enhancement
Drain-source voltage: 200V
Kind of package: tube
On-state resistance: 10.5mΩ
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MCB60I1200TZ-TUB IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 70A; TO268AA
Case: TO268AA
Technology: SiC
Gate charge: 160C
Polarisation: unipolar
Drain current: 70A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Kind of package: tube
On-state resistance: 25mΩ
Mounting: SMD
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MCB60P1200TLB-TRR IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 62A; SMPD-B
Semiconductor structure: double series
Case: SMPD-B
Technology: SiC
Gate charge: 161nC
Polarisation: unipolar
Drain current: 62A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Kind of package: reel; tape
On-state resistance: 25mΩ
Mounting: SMD
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MCB60P1200TLB-TUB IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 62A; SMPD-B
Semiconductor structure: double series
Case: SMPD-B
Technology: SiC
Gate charge: 161nC
Polarisation: unipolar
Drain current: 62A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Kind of package: tube
On-state resistance: 25mΩ
Mounting: SMD
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MDMA600P1600PTSF IXYS MDMA600P1600PTSF.pdf Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 600A; SimBus F; Ifsm: 15kA
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Case: SimBus F
Electrical mounting: Press-Fit
Mechanical mounting: screw
Kind of package: bulk
Max. forward impulse current: 15kA
Load current: 600A
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MIXG240RF1200PTED IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; X2PT
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 250A
Case: E2-Pack PFP
Electrical mounting: Press-Fit
Mechanical mounting: screw
Technology: X2PT
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MITA300RF1700PTED IXYS media?resourcetype=datasheets&amp;itemid=202c2010-df96-46c8-b404-30369d66b0f0&amp;filename=mita300rf1700pted.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.7kV
Collector current: 310A
Case: E2-Pack PFP
Electrical mounting: Press-Fit
Mechanical mounting: screw
Technology: Trench
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MIXA100W1200TEH IXYS MIXA100W1200TEH.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 108A
Case: E3-Pack
Application: motors; photovoltaics
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 500W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
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VVZB170-16ioXT IXYS VVZB170-16IOXT.pdf Category: IGBT modules
Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 1.2kV
Type of semiconductor module: IGBT
Semiconductor structure: diode/thyristor/IGBT
Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 140A
Case: E2-Pack
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 500W
Technology: X2PT
Mechanical mounting: screw
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MDNA360UB2200PTED IXYS MDNA360UB2200PTED.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Mechanical mounting: screw
Pulsed collector current: 280A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Case: E2-Pack
Gate-emitter voltage: ±20V
Collector current: 135A
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
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MDNA210UB2200PTED IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Mechanical mounting: screw
Pulsed collector current: 200A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Case: E2-Pack
Gate-emitter voltage: ±20V
Collector current: 100A
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
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IX4426N IX4426N IXYS IX4426-27-28.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Number of channels: 2
Output current: -1.5...1.5A
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IXTP80N10T IXTP80N10T IXYS IXTA(P)80N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO220AB; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO220AB
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
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IXTT170N10P IXTT170N10P IXYS IXTK170N10P-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO268
Power dissipation: 715W
Gate charge: 198nC
Polarisation: unipolar
Technology: Polar™
Drain current: 170A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO268
On-state resistance: 9mΩ
Reverse recovery time: 120ns
Mounting: SMD
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IXTT88N30P IXTT88N30P IXYS IXTH88N30P-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 88A; 600W; TO268
Power dissipation: 600W
Gate charge: 180nC
Polarisation: unipolar
Technology: PolarHT™
Drain current: 88A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO268
On-state resistance: 40mΩ
Reverse recovery time: 250ns
Mounting: SMD
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DSB40C15PB DSB40C15PB IXYS DSB40C15PB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 15V; 20Ax2; TO220AB; Ufmax: 0.39V
Max. forward impulse current: 390A
Max. forward voltage: 0.39V
Power dissipation: 70W
Max. off-state voltage: 15V
Heatsink thickness: 1.14...1.39mm
Load current: 20A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: Schottky rectifying
Mounting: THT
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MCMA110P1200TA IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 110A; Ifmax: 170A; TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 110A
Max. load current: 170A
Case: TO240AA
Max. forward voltage: 1.57V
Max. forward impulse current: 1.9kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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MCMA140P1200TA IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 140A; TO240AA; Ufmax: 1.7V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.7V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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DSEI2X101-06P DSEI2X101-06P IXYS DSEI2X101-06P.pdf Category: Diode modules
Description: Module: diode; double independent; 600V; If: 96Ax2; ECO-PAC 2; THT
Electrical mounting: THT
Max. forward impulse current: 1.2kA
Max. forward voltage: 1.17V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 0.6kV
Load current: 96A x2
Max. load current: 192A
Kind of package: bulk
Semiconductor structure: double independent
Case: ECO-PAC 2
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IXTK170P10P IXTK170P10P IXYS IXTK170P10P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -170A; 890W; TO264
Drain current: -170A
Kind of channel: enhancement
Drain-source voltage: -100V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO264
On-state resistance: 14mΩ
Reverse recovery time: 176ns
Mounting: THT
Power dissipation: 890W
Gate charge: 240nC
Polarisation: unipolar
Technology: PolarP™
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IXTK17N120L IXTK17N120L IXYS IXTK(X)17N120L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 17A; 700W; TO264; 1.83us
Drain current: 17A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 0.9Ω
Reverse recovery time: 1.83µs
Mounting: THT
Power dissipation: 700W
Gate charge: 155nC
Polarisation: unipolar
Features of semiconductor devices: linear power mosfet
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PLB171PTR IXYS PLB171.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 80mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 80mA
Switched voltage: max. 800V AC; max. 800V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 90Ω
Mounting: SMT
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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DSSK30-018A DSSK30-018A IXYS DSSK30-018A.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 180V; 15Ax2; TO247-3; Ufmax: 0.72V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 180V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.72V
Max. forward impulse current: 120A
Power dissipation: 90W
Kind of package: tube
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IXTH64N10L2 IXTH64N10L2 IXYS IXTA(H,P)64N10L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 64A; 357W; TO247-3; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 64A
Power dissipation: 357W
Case: TO247-3
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 180ns
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DHG50X650NA DHG50X650NA IXYS DFE240X600NA.pdf Category: Diode modules
Description: Module: diode; double independent; 650V; If: 25Ax2; SOT227B; screw
Max. forward impulse current: 200A
Max. forward voltage: 2.03V
Type of semiconductor module: diode
Technology: Sonic FRD™
Mechanical mounting: screw
Max. off-state voltage: 650V
Electrical mounting: screw
Load current: 25A x2
Max. load current: 50A
Kind of package: tube
Semiconductor structure: double independent
Case: SOT227B
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
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DFE250X600NA DFE250X600NA IXYS DFE250X600NA.pdf Category: Diode modules
Description: Module: diode; double independent; 600V; If: 125Ax2; SOT227B; screw
Max. forward impulse current: 1.2kA
Type of semiconductor module: diode
Technology: FRED
Mechanical mounting: screw
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Load current: 125A x2
Max. load current: 250A
Kind of package: tube
Semiconductor structure: double independent
Case: SOT227B
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IXTQ14N60P IXTQ14N60P IXYS IXTA(P,Q)14N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO3P
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Gate charge: 36nC
Features of semiconductor devices: standard power mosfet
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IXFP14N60P IXFP14N60P IXYS IXFA(H,P)14N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
Produkt ist nicht verfügbar
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IXFH14N60P IXFH14N60P IXYS IXFA(H,P)14N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
Produkt ist nicht verfügbar
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IXFA14N60P IXFA14N60P IXYS IXFA(H,P)14N60P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 14A; 300W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.55Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
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IXTA14N60P IXTA14N60P IXYS IXTA(P,Q)14N60P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO263; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.55Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Gate charge: 36nC
Features of semiconductor devices: standard power mosfet
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IXTP14N60P IXTP14N60P IXYS IXTA(P,Q)14N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO220AB; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Gate charge: 36nC
Features of semiconductor devices: standard power mosfet
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LAA108 LAA108 IXYS LAA108.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Type of relay: solid state
Max. operating current: 300mA
Switched voltage: max. 100V AC; max. 100V DC
Mounting: THT
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 50mA
On-state resistance: 8Ω
Kind of output: MOSFET
Body dimensions: 9.66x6.35x3.3mm
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
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DH20-18A DH20-18A IXYS DH20-18A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 20A; Ifsm: 150A; TO247-2; tube; 140W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.8kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 150A
Kind of package: tube
Max. forward voltage: 2.35V
Power dissipation: 140W
Features of semiconductor devices: fast switching
Reverse recovery time: 300ns
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DSEI36-06AS-TRL DSEI36-06AS-TRL IXYS littelfuse-power-semiconductors-dsei36-06as-datasheet?assetguid=e6dafff2-758c-449a-9042-56d94bd941ff Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 50ns; D2PAK,TO263AB; Ufmax: 1.6V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: D2PAK; TO263AB
Max. forward voltage: 1.6V
Max. forward impulse current: 0.3kA
Technology: FRED
Kind of package: reel; tape
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DSEI36-06AS-TUB IXYS DSEI36-06AS.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 37A; 35ns; TO263AB; Ufmax: 1.4V; 125W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 37A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO263AB
Max. forward voltage: 1.4V
Max. forward impulse current: 0.3kA
Power dissipation: 125W
Technology: FRED
Kind of package: tube
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PM1206 PM1206 IXYS PM1206.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Mounting: THT
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 600V AC
Case: DIP6
Max. operating current: 0.5A
Control current max.: 100mA
Type of relay: solid state
Relay variant: 1-phase
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IXYN75N65C3D1 IXYN75N65C3D1 IXYS IXYN75N65C3D1.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 75A; SOT227B; 600W
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 650V
Collector current: 75A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Power dissipation: 600W
Technology: GenX3™; XPT™
Mechanical mounting: screw
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IXFT150N30X3HV-TRL IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 300V; 150A; 890W; D3PAK,TO268; 167ns
Mounting: SMD
Power dissipation: 890W
Gate charge: 177nC
Technology: HiPerFET™
Drain current: 150A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Case: D3PAK; TO268
On-state resistance: 8.3mΩ
Reverse recovery time: 167ns
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CPC2907B CPC2907B IXYS CPC2907B.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 2000mA; OptoMOS
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
Insulation voltage: 4kV
Turn-on time: 2.5ms
Switched voltage: max. 60V AC; max. 60V DC
Case: PowerSO8
Max. operating current: 2A
Turn-off time: 0.25ms
Control current max.: 50mA
On-state resistance: 0.15Ω
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MEA250-12DA IXYS PCN241015_Y4-M6 screw.pdf Category: Diode modules
Description: Module: diode; double,common anode; 1.2kV; If: 260A; Y4-M6; screw
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 260A
Semiconductor structure: common anode; double
Max. forward impulse current: 2.4kA
Max. forward voltage: 1.54V
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IXSA110N65L2-7TR IXYS ixsa110n65l2-7tr-datasheet?assetguid=923b711e-d1bd-47db-883a-a89e0dbb7cd7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 25A; 600W; D2PAK-7
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: N
Drain-source voltage: 650V
Drain current: 25A
Power dissipation: 600W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 111Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 125nC
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IXSG110N65L2K IXYS ixsg110n65l2k-datasheet?assetguid=d127241c-420d-4b40-9bb8-f5c211263533 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 111A; 600W; TOLL
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: N
Drain-source voltage: 650V
Drain current: 111A
Power dissipation: 600W
Case: TOLL
Gate-source voltage: -5...20V
On-state resistance: 25Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 125nC
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IXFT16N80P IXFH16N80P.pdf
IXFT16N80P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 16A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 16A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
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IXFK180N15P IXFK180N15P.pdf
IXFK180N15P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 180A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 180A
Power dissipation: 830W
Case: TO264
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
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DCG20B650LB-TUB
Hersteller: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 650V; 16A; SMPD-B; SMT; tube
Type of bridge rectifier: single-phase
Max. off-state voltage: 650V
Load current: 16A
Case: SMPD-B
Electrical mounting: SMT
Kind of package: tube
Max. forward voltage: 2V
Features of semiconductor devices: Schottky
Technology: SiC
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PLA150S PLA150.pdf
PLA150S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.250VAC
Mounting: SMT
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP6
Max. operating current: 250mA
Turn-off time: 0.5ms
Control current max.: 50mA
On-state resistance: 7Ω
Type of relay: solid state
Manufacturer series: OptoMOS
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PLA150 PLA150.pdf
PLA150
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.250VAC
Mounting: THT
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP6
Max. operating current: 250mA
Turn-off time: 0.5ms
Control current max.: 50mA
On-state resistance: 7Ω
Type of relay: solid state
Manufacturer series: OptoMOS
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PLB150S PLB150.pdf
PLB150S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 250mA; max.250VAC
Mounting: SMT
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NC
Insulation voltage: 3.75kV
Turn-on time: 1ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP6
Max. operating current: 250mA
Turn-off time: 2.5ms
Control current max.: 50mA
On-state resistance: 7Ω
Type of relay: solid state
Manufacturer series: OptoMOS
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PAA191 PAA191.pdf
PAA191
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Mounting: THT
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
Insulation voltage: 5kV
Turn-on time: 3ms
Switched voltage: max. 400V AC; max. 400V DC
Case: DIP8
Max. operating current: 250mA
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
Type of relay: solid state
Manufacturer series: OptoMOS
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PBA150S PBA150.pdf
PBA150S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 250mA
Mounting: SMT
Relay variant: 1-phase; current source
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO + SPST-NC
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP8
Max. operating current: 250mA
Turn-off time: 2.5ms
Control current max.: 50mA
On-state resistance: 7Ω
Type of relay: solid state
Manufacturer series: OptoMOS
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IXXK200N60C3 IXXK(X)200N60C3.pdf
IXXK200N60C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 200A; 1.63kW; TO264
Type of transistor: IGBT
Collector current: 200A
Mounting: THT
Collector-emitter voltage: 600V
Power dissipation: 1.63kW
Gate charge: 315nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 900A
Turn-on time: 143ns
Kind of package: tube
Case: TO264
Turn-off time: 240ns
Gate-emitter voltage: ±20V
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IXXX300N60C3 IXXK(x)300N60C3.pdf
IXXX300N60C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; PLUS247™
Type of transistor: IGBT
Collector current: 300A
Mounting: THT
Collector-emitter voltage: 600V
Power dissipation: 2.3kW
Gate charge: 438nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 1075A
Turn-on time: 128ns
Kind of package: tube
Case: PLUS247™
Turn-off time: 278ns
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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IXTA02N250HV IXTA(T)02N250HV.pdf
IXTA02N250HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 0.2A; 83W; TO263; 1.5us
Reverse recovery time: 1.5µs
Mounting: SMD
Power dissipation: 83W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 0.2A
Kind of channel: enhancement
Drain-source voltage: 2.5kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO263
On-state resistance: 450Ω
Produkt ist nicht verfügbar
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IXTH02N250 IXTH02N250.pdf
IXTH02N250
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 0.2A; 83W; TO247-3; 1.5us
Power dissipation: 83W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 0.2A
Kind of channel: enhancement
Drain-source voltage: 2.5kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO247-3
On-state resistance: 450Ω
Reverse recovery time: 1.5µs
Mounting: THT
Produkt ist nicht verfügbar
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IXTQ470P2 IXTQ470P2.pdf
IXTQ470P2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO3P; 400ns
Case: TO3P
Mounting: THT
On-state resistance: 0.145Ω
Kind of package: tube
Power dissipation: 830W
Gate charge: 88nC
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 42A
Kind of channel: enhancement
Drain-source voltage: 500V
Type of transistor: N-MOSFET
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
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IXTQ120N15P IXTQ120N15P-DTE.pdf
IXTQ120N15P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO3P
On-state resistance: 16mΩ
Reverse recovery time: 150ns
Mounting: THT
Power dissipation: 600W
Gate charge: 150nC
Polarisation: unipolar
Technology: PolarHT™
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO3P
Produkt ist nicht verfügbar
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IXXH75N60B3D1 IXXH75N60B3D1.pdf
IXXH75N60B3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 750W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Turn-on time: 108ns
Turn-off time: 315ns
Produkt ist nicht verfügbar
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CPC3960ZTR CPC3960.pdf
CPC3960ZTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.1A; 1.8W; SOT223
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±15V
On-state resistance: 44Ω
Power dissipation: 1.8W
Polarisation: unipolar
Drain current: 0.1A
auf Bestellung 980 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
85+1 EUR
113+0.75 EUR
134+0.63 EUR
500+0.6 EUR
Mindestbestellmenge: 85 Stücke
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IXFP38N30X3M IXFP38N30X3M.pdf 300VProductBrief.pdf
IXFP38N30X3M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 38A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
auf Bestellung 268 Stücke:
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13+6.72 EUR
15+5.77 EUR
50+5.22 EUR
Mindestbestellmenge: 13 Stücke
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IXFB210N20P IXFB210N20P.pdf
IXFB210N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 210A; 1500W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.5kW
Case: PLUS264™
Mounting: THT
Gate charge: 255nC
Technology: HiPerFET™; Polar™
Drain current: 210A
Kind of channel: enhancement
Drain-source voltage: 200V
Kind of package: tube
On-state resistance: 10.5mΩ
Produkt ist nicht verfügbar
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MCB60I1200TZ-TUB
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 70A; TO268AA
Case: TO268AA
Technology: SiC
Gate charge: 160C
Polarisation: unipolar
Drain current: 70A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Kind of package: tube
On-state resistance: 25mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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MCB60P1200TLB-TRR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 62A; SMPD-B
Semiconductor structure: double series
Case: SMPD-B
Technology: SiC
Gate charge: 161nC
Polarisation: unipolar
Drain current: 62A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Kind of package: reel; tape
On-state resistance: 25mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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MCB60P1200TLB-TUB
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 62A; SMPD-B
Semiconductor structure: double series
Case: SMPD-B
Technology: SiC
Gate charge: 161nC
Polarisation: unipolar
Drain current: 62A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Kind of package: tube
On-state resistance: 25mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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MDMA600P1600PTSF MDMA600P1600PTSF.pdf
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 600A; SimBus F; Ifsm: 15kA
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Case: SimBus F
Electrical mounting: Press-Fit
Mechanical mounting: screw
Kind of package: bulk
Max. forward impulse current: 15kA
Load current: 600A
Produkt ist nicht verfügbar
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MIXG240RF1200PTED
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; X2PT
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 250A
Case: E2-Pack PFP
Electrical mounting: Press-Fit
Mechanical mounting: screw
Technology: X2PT
Produkt ist nicht verfügbar
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MITA300RF1700PTED media?resourcetype=datasheets&amp;itemid=202c2010-df96-46c8-b404-30369d66b0f0&amp;filename=mita300rf1700pted.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.7kV
Collector current: 310A
Case: E2-Pack PFP
Electrical mounting: Press-Fit
Mechanical mounting: screw
Technology: Trench
Produkt ist nicht verfügbar
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MIXA100W1200TEH MIXA100W1200TEH.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 108A
Case: E3-Pack
Application: motors; photovoltaics
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 500W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Produkt ist nicht verfügbar
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VVZB170-16ioXT VVZB170-16IOXT.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 1.2kV
Type of semiconductor module: IGBT
Semiconductor structure: diode/thyristor/IGBT
Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 140A
Case: E2-Pack
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 500W
Technology: X2PT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MDNA360UB2200PTED MDNA360UB2200PTED.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Mechanical mounting: screw
Pulsed collector current: 280A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Case: E2-Pack
Gate-emitter voltage: ±20V
Collector current: 135A
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
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MDNA210UB2200PTED
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Mechanical mounting: screw
Pulsed collector current: 200A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Case: E2-Pack
Gate-emitter voltage: ±20V
Collector current: 100A
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
Mindestbestellmenge: 28 Stücke
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IX4426N IX4426-27-28.pdf
IX4426N
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Number of channels: 2
Output current: -1.5...1.5A
auf Bestellung 374 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
65+1.31 EUR
89+0.95 EUR
96+0.89 EUR
97+0.88 EUR
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IXTP80N10T IXTA(P)80N10T.pdf
IXTP80N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO220AB; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO220AB
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
auf Bestellung 44 Stücke:
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AnzahlPrivatkunde
17+5.06 EUR
20+4.28 EUR
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IXTT170N10P IXTK170N10P-DTE.pdf
IXTT170N10P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO268
Power dissipation: 715W
Gate charge: 198nC
Polarisation: unipolar
Technology: Polar™
Drain current: 170A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO268
On-state resistance: 9mΩ
Reverse recovery time: 120ns
Mounting: SMD
auf Bestellung 13 Stücke:
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AnzahlPrivatkunde
5+18.12 EUR
7+13.03 EUR
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IXTT88N30P IXTH88N30P-DTE.pdf
IXTT88N30P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 88A; 600W; TO268
Power dissipation: 600W
Gate charge: 180nC
Polarisation: unipolar
Technology: PolarHT™
Drain current: 88A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO268
On-state resistance: 40mΩ
Reverse recovery time: 250ns
Mounting: SMD
auf Bestellung 140 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
5+19.62 EUR
6+16.78 EUR
10+15.72 EUR
Mindestbestellmenge: 5 Stücke
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DSB40C15PB DSB40C15PB.pdf
DSB40C15PB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 15V; 20Ax2; TO220AB; Ufmax: 0.39V
Max. forward impulse current: 390A
Max. forward voltage: 0.39V
Power dissipation: 70W
Max. off-state voltage: 15V
Heatsink thickness: 1.14...1.39mm
Load current: 20A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: Schottky rectifying
Mounting: THT
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
38+2.25 EUR
43+2.02 EUR
48+1.78 EUR
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MCMA110P1200TA PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 110A; Ifmax: 170A; TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 110A
Max. load current: 170A
Case: TO240AA
Max. forward voltage: 1.57V
Max. forward impulse current: 1.9kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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MCMA140P1200TA PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 140A; TO240AA; Ufmax: 1.7V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.7V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
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DSEI2X101-06P DSEI2X101-06P.pdf
DSEI2X101-06P
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 96Ax2; ECO-PAC 2; THT
Electrical mounting: THT
Max. forward impulse current: 1.2kA
Max. forward voltage: 1.17V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 0.6kV
Load current: 96A x2
Max. load current: 192A
Kind of package: bulk
Semiconductor structure: double independent
Case: ECO-PAC 2
auf Bestellung 25 Stücke:
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3+33.08 EUR
10+30.76 EUR
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IXTK170P10P IXTK170P10P.pdf
IXTK170P10P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -170A; 890W; TO264
Drain current: -170A
Kind of channel: enhancement
Drain-source voltage: -100V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO264
On-state resistance: 14mΩ
Reverse recovery time: 176ns
Mounting: THT
Power dissipation: 890W
Gate charge: 240nC
Polarisation: unipolar
Technology: PolarP™
Produkt ist nicht verfügbar
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IXTK17N120L IXTK(X)17N120L.pdf
IXTK17N120L
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 17A; 700W; TO264; 1.83us
Drain current: 17A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 0.9Ω
Reverse recovery time: 1.83µs
Mounting: THT
Power dissipation: 700W
Gate charge: 155nC
Polarisation: unipolar
Features of semiconductor devices: linear power mosfet
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PLB171PTR PLB171.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 80mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 80mA
Switched voltage: max. 800V AC; max. 800V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 90Ω
Mounting: SMT
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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DSSK30-018A DSSK30-018A.pdf
DSSK30-018A
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 180V; 15Ax2; TO247-3; Ufmax: 0.72V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 180V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.72V
Max. forward impulse current: 120A
Power dissipation: 90W
Kind of package: tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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IXTH64N10L2 IXTA(H,P)64N10L2.pdf
IXTH64N10L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 64A; 357W; TO247-3; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 64A
Power dissipation: 357W
Case: TO247-3
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 180ns
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DHG50X650NA DFE240X600NA.pdf
DHG50X650NA
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 25Ax2; SOT227B; screw
Max. forward impulse current: 200A
Max. forward voltage: 2.03V
Type of semiconductor module: diode
Technology: Sonic FRD™
Mechanical mounting: screw
Max. off-state voltage: 650V
Electrical mounting: screw
Load current: 25A x2
Max. load current: 50A
Kind of package: tube
Semiconductor structure: double independent
Case: SOT227B
Reverse recovery time: 35ns
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DFE250X600NA DFE250X600NA.pdf
DFE250X600NA
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 125Ax2; SOT227B; screw
Max. forward impulse current: 1.2kA
Type of semiconductor module: diode
Technology: FRED
Mechanical mounting: screw
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Load current: 125A x2
Max. load current: 250A
Kind of package: tube
Semiconductor structure: double independent
Case: SOT227B
Produkt ist nicht verfügbar
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IXTQ14N60P IXTA(P,Q)14N60P.pdf
IXTQ14N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO3P
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Gate charge: 36nC
Features of semiconductor devices: standard power mosfet
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IXFP14N60P IXFA(H,P)14N60P.pdf
IXFP14N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
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IXFH14N60P IXFA(H,P)14N60P.pdf
IXFH14N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
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IXFA14N60P IXFA(H,P)14N60P.pdf
IXFA14N60P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 14A; 300W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.55Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
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IXTA14N60P IXTA(P,Q)14N60P.pdf
IXTA14N60P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO263; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.55Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Gate charge: 36nC
Features of semiconductor devices: standard power mosfet
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IXTP14N60P IXTA(P,Q)14N60P.pdf
IXTP14N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO220AB; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Gate charge: 36nC
Features of semiconductor devices: standard power mosfet
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LAA108 LAA108.pdf
LAA108
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Type of relay: solid state
Max. operating current: 300mA
Switched voltage: max. 100V AC; max. 100V DC
Mounting: THT
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 50mA
On-state resistance: 8Ω
Kind of output: MOSFET
Body dimensions: 9.66x6.35x3.3mm
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
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13+6.56 EUR
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DH20-18A DH20-18A.pdf
DH20-18A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 20A; Ifsm: 150A; TO247-2; tube; 140W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.8kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 150A
Kind of package: tube
Max. forward voltage: 2.35V
Power dissipation: 140W
Features of semiconductor devices: fast switching
Reverse recovery time: 300ns
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AnzahlPrivatkunde
9+9.98 EUR
10+8.82 EUR
11+8.04 EUR
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DSEI36-06AS-TRL littelfuse-power-semiconductors-dsei36-06as-datasheet?assetguid=e6dafff2-758c-449a-9042-56d94bd941ff
DSEI36-06AS-TRL
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 50ns; D2PAK,TO263AB; Ufmax: 1.6V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: D2PAK; TO263AB
Max. forward voltage: 1.6V
Max. forward impulse current: 0.3kA
Technology: FRED
Kind of package: reel; tape
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DSEI36-06AS-TUB DSEI36-06AS.pdf
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 37A; 35ns; TO263AB; Ufmax: 1.4V; 125W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 37A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO263AB
Max. forward voltage: 1.4V
Max. forward impulse current: 0.3kA
Power dissipation: 125W
Technology: FRED
Kind of package: tube
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PM1206 PM1206.pdf
PM1206
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Mounting: THT
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 600V AC
Case: DIP6
Max. operating current: 0.5A
Control current max.: 100mA
Type of relay: solid state
Relay variant: 1-phase
auf Bestellung 83 Stücke:
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AnzahlPrivatkunde
4+23.38 EUR
50+15.32 EUR
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IXYN75N65C3D1 IXYN75N65C3D1.pdf
IXYN75N65C3D1
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 75A; SOT227B; 600W
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 650V
Collector current: 75A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Power dissipation: 600W
Technology: GenX3™; XPT™
Mechanical mounting: screw
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IXFT150N30X3HV-TRL
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 300V; 150A; 890W; D3PAK,TO268; 167ns
Mounting: SMD
Power dissipation: 890W
Gate charge: 177nC
Technology: HiPerFET™
Drain current: 150A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Case: D3PAK; TO268
On-state resistance: 8.3mΩ
Reverse recovery time: 167ns
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CPC2907B CPC2907B.pdf
CPC2907B
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 2000mA; OptoMOS
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
Insulation voltage: 4kV
Turn-on time: 2.5ms
Switched voltage: max. 60V AC; max. 60V DC
Case: PowerSO8
Max. operating current: 2A
Turn-off time: 0.25ms
Control current max.: 50mA
On-state resistance: 0.15Ω
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AnzahlPrivatkunde
4+24.94 EUR
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MEA250-12DA PCN241015_Y4-M6 screw.pdf
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double,common anode; 1.2kV; If: 260A; Y4-M6; screw
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 260A
Semiconductor structure: common anode; double
Max. forward impulse current: 2.4kA
Max. forward voltage: 1.54V
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IXSA110N65L2-7TR ixsa110n65l2-7tr-datasheet?assetguid=923b711e-d1bd-47db-883a-a89e0dbb7cd7
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 25A; 600W; D2PAK-7
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: N
Drain-source voltage: 650V
Drain current: 25A
Power dissipation: 600W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 111Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 125nC
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IXSG110N65L2K ixsg110n65l2k-datasheet?assetguid=d127241c-420d-4b40-9bb8-f5c211263533
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 111A; 600W; TOLL
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: N
Drain-source voltage: 650V
Drain current: 111A
Power dissipation: 600W
Case: TOLL
Gate-source voltage: -5...20V
On-state resistance: 25Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 125nC
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