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MIXA225PF1200TSF IXYS MIXA225PF1200TSF.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 250A
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Collector current: 250A
Pulsed collector current: 500A
Power dissipation: 1.1kW
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Application: fans; for pump; for UPS; motors
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IXFN60N80P IXFN60N80P IXYS IXFN60N80P.pdf description Category: Transistor drivers
Description: Module; single transistor; 800V; 53A; SOT227B; screw; Idm: 150A
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 53A
Pulsed drain current: 150A
Power dissipation: 1.04kW
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Gate charge: 250nC
Kind of channel: enhancement
Reverse recovery time: 250ns
Electrical mounting: screw
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Technology: HiPerFET™; Polar™
Mechanical mounting: screw
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IXFB60N80P IXFB60N80P IXYS IXFB60N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 60A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 60A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar™
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IXFL60N80P IXFL60N80P IXYS IXFL60N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 40A; 625W; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 40A
Power dissipation: 625W
Case: ISOPLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar™
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IX526119 IXYS Category: IGBT modules
Description: Transistor: IGBT; SMPD-B
Type of transistor: IGBT
Case: SMPD-B
Mounting: SMD
Kind of package: reel; tape
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VVZB135-16IOXT IXYS VVZB135-16IOXT.pdf Category: IGBT modules
Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 1.2kV
Type of semiconductor module: IGBT
Power dissipation: 390W
Technology: X2PT
Mechanical mounting: screw
Pulsed collector current: 225A
Application: Inverter
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/thyristor/IGBT
Case: E2-Pack
Gate-emitter voltage: ±20V
Collector current: 84A
Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor
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IXFK40N90P IXFK40N90P IXYS IXFK(X)40N90P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 40A; 960W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 40A
Power dissipation: 960W
Case: TO264
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
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IXTH60N20L2 IXTH60N20L2 IXYS IXTH(T,Q)60N20L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO247-3; 330ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 330ns
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IXTH110N10L2 IXTH110N10L2 IXYS IXTH(T)110N10L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 110A; 600W; TO247-3; 230ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 230ns
Features of semiconductor devices: linear power mosfet
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LF21904NTR LF21904NTR IXYS LF21904NTR.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; -4.5÷4.5A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -4.5...4.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 10...20V
Voltage class: 600V
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
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LF2103NTR LF2103NTR IXYS LF2103NTR.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 10...20V
Voltage class: 600V
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
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LF21064NTR LF21064NTR IXYS LF21064NTR.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 10...20V
Voltage class: 600V
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
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IXFN200N10P IXFN200N10P IXYS IXFN200N10P.pdf description Category: Transistor drivers
Description: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 400A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 200A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 7.5mΩ
Pulsed drain current: 400A
Power dissipation: 680W
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate charge: 235nC
Reverse recovery time: 150ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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IXXK300N60B3 IXXK300N60B3 IXYS IXXK(X)300N60B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; TO264
Mounting: THT
Case: TO264
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Turn-on time: 137ns
Turn-off time: 430ns
Gate charge: 460nC
Gate-emitter voltage: ±20V
Collector current: 300A
Collector-emitter voltage: 600V
Pulsed collector current: 1.14kA
Power dissipation: 2.3kW
Kind of package: tube
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IXFH180N20X3 IXFH180N20X3 IXYS IXF_180N20X3_HV.pdf 200VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 180A; 780W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 180A
Power dissipation: 780W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 154nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 94ns
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DCK30C1200HB IXYS DCK30C1200HB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 44A; TO247-3; Ir: 2uA
Mounting: THT
Case: TO247-3
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 2µA
Max. forward voltage: 1.7V
Load current: 44A
Max. forward impulse current: 120A
Max. off-state voltage: 1.2kV
Semiconductor structure: common cathode; double
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DCG45X1200NA DCG45X1200NA IXYS DCG45X1200NA.pdf Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 22Ax2; SOT227B; screw
Case: SOT227B
Kind of package: tube
Features of semiconductor devices: Schottky
Electrical mounting: screw
Mechanical mounting: screw
Technology: SiC
Max. forward voltage: 2.2V
Load current: 22A x2
Max. load current: 44A
Max. off-state voltage: 1.2kV
Semiconductor structure: double independent
Type of semiconductor module: diode
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IXTP12N70X2 IXTP12N70X2 IXYS ixty2n65x2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; Idm: 24A; 180W; TO220AB
Mounting: THT
Type of transistor: N-MOSFET
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Drain current: 12A
Drain-source voltage: 700V
Gate charge: 19nC
On-state resistance: 0.3Ω
Gate-source voltage: ±30V
Pulsed drain current: 24A
Power dissipation: 180W
Kind of channel: enhancement
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IXTP120N04T2 IXTP120N04T2 IXYS IXTA(P)120N04T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO220AB; 35ns
Reverse recovery time: 35ns
Mounting: THT
Power dissipation: 200W
Gate charge: 58nC
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 6.1mΩ
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IXTP120N075T2 IXTP120N075T2 IXYS IXTA(P)120N075T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 250W; TO220AB; 50ns
Reverse recovery time: 50ns
Mounting: THT
Power dissipation: 250W
Gate charge: 78nC
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 75V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 7.7mΩ
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IXTP12N70X2M IXTP12N70X2M IXYS ixty2n65x2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; Idm: 24A; 40W; TO220FP
Mounting: THT
Type of transistor: N-MOSFET
Case: TO220FP
Kind of package: tube
Polarisation: unipolar
Drain current: 12A
Drain-source voltage: 700V
Gate charge: 19nC
On-state resistance: 0.3Ω
Gate-source voltage: ±30V
Pulsed drain current: 24A
Power dissipation: 40W
Kind of channel: enhancement
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IXGF25N250 IXYS littelfuse_discrete_igbts_npt_ixgf25n250_datasheet.pdf.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 2.5kV; 30A; 114W; i4-pac
Type of transistor: IGBT
Collector-emitter voltage: 2.5kV
Collector current: 30A
Power dissipation: 114W
Case: i4-pac
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 75nC
Kind of package: tube
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IXCP10M90S IXCP10M90S IXYS IXCP10M90S.pdf Category: Integrated circuits - others
Description: IC: driver; current regulator; TO220AB; 900VDC; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO220AB
Mounting: THT
Operating temperature: -55...150°C
Operating voltage: 900V DC
Power dissipation: 40W
Operating current: 2...100mA
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IXCY10M90S IXCY10M90S IXYS IXCP10M90S.pdf Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 900VDC; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO252
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 900V DC
Power dissipation: 40W
Operating current: 2...100mA
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IXCY10M90S-TRL IXYS littelfuse-power-semi-ixcp10m90s-ixcy10m90s?assetguid=c96aeca6-1b81-4b5d-af9f-6cbd5216c35e Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 900VDC; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO252
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 900V DC
Power dissipation: 40W
Operating current: 2...100mA
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IXGN320N60A3 IXGN320N60A3 IXYS IXGN320N60A3.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 170A; SOT227B
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Technology: GenX3™; PT
Gate-emitter voltage: ±20V
Collector current: 170A
Pulsed collector current: 1.2kA
Power dissipation: 735W
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
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IXGN100N170 IXGN100N170 IXYS IXGN100N170.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 95A; SOT227B
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Features of semiconductor devices: high voltage
Technology: NPT
Gate-emitter voltage: ±20V
Collector current: 95A
Pulsed collector current: 600A
Power dissipation: 735W
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
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IXGN400N60A3 IXGN400N60A3 IXYS IXGN400N60A3.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 190A; SOT227B
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Technology: GenX3™; PT
Gate-emitter voltage: ±20V
Collector current: 190A
Pulsed collector current: 800A
Power dissipation: 830W
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
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IXGN400N60B3 IXGN400N60B3 IXYS IXGN400N60B3.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Technology: GenX3™; PT
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 1.5kA
Power dissipation: 1kW
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
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IXGN200N170 IXGN200N170 IXYS IXGN200N170.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 160A; SOT227B
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Technology: NPT
Gate-emitter voltage: ±20V
Collector current: 160A
Pulsed collector current: 1.05kA
Power dissipation: 1.25kW
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
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IXGN82N120C3H1 IXYS Category: IGBT modules
Description: Module: IGBT; Ic: 130A; SOT227B; tube
Case: SOT227B
Kind of package: tube
Type of semiconductor module: IGBT
Collector current: 130A
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IXTP140P05T IXTP140P05T IXYS IXT_140P05T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; 53ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 298W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Drain-source voltage: -50V
Drain current: -140A
Reverse recovery time: 53ns
Gate charge: 200nC
On-state resistance: 9mΩ
Gate-source voltage: ±15V
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IXTH140P05T IXTH140P05T IXYS IXT_140P05T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; 53ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 298W
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Drain-source voltage: -50V
Drain current: -140A
Reverse recovery time: 53ns
Gate charge: 200nC
On-state resistance: 9mΩ
Gate-source voltage: ±15V
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IXTH140P10T IXTH140P10T IXYS IXT_140P10T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -140A; 568W; 130ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 568W
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Drain-source voltage: -100V
Drain current: -140A
Reverse recovery time: 130ns
Gate charge: 400nC
On-state resistance: 10mΩ
Gate-source voltage: ±15V
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PAA140P PAA140P IXYS PAA140.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
Mounting: SMT
Body dimensions: 9.65x6.35x2.16mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
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PAA140PTR IXYS PAA140.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
Mounting: SMT
Body dimensions: 9.65x6.35x2.16mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
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MCMA140PD1600TB MCMA140PD1600TB IXYS MCMA140PD1600TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 140A; TO240AA; Ufmax: 1.28V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.28V
Load current: 140A
Max. load current: 220A
Max. forward impulse current: 2.4kA
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
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IXTA140P05T IXTA140P05T IXYS IXT_140P05T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; TO263
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain current: -140A
Drain-source voltage: -50V
Reverse recovery time: 53ns
Gate charge: 200nC
On-state resistance: 9mΩ
Power dissipation: 298W
Gate-source voltage: ±15V
Kind of package: tube
Case: TO263
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IXTT140P10T IXTT140P10T IXYS IXT_140P10T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -140A; 568W; TO268
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain current: -140A
Drain-source voltage: -100V
Reverse recovery time: 130ns
Gate charge: 400nC
On-state resistance: 10mΩ
Power dissipation: 568W
Gate-source voltage: ±15V
Kind of package: tube
Case: TO268
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MDMA140P1600TG IXYS MDMA140P1600TG.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 140A; TO240AA; Ufmax: 1.11V
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Load current: 140A
Max. forward voltage: 1.11V
Max. forward impulse current: 2.38kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Case: TO240AA
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MCMA140P1800TA IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 140A; TO240AA; Ufmax: 1.7V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Load current: 140A
Gate current: 150/200mA
Max. forward voltage: 1.7V
Max. off-state voltage: 1.8kV
Kind of package: bulk
Case: TO240AA
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IXTA140P05T-TRL IXYS Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 50V; 298W; D2PAK
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Drain-source voltage: 50V
Power dissipation: 298W
Gate-source voltage: 15V
Case: D2PAK
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IXTH200N10T IXTH200N10T IXYS IXTH(Q)200N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO247-3; 76ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 550W
Case: TO247-3
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 76ns
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IXFX200N10P IXFX200N10P IXYS IXFK(X)200N10P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Kind of channel: enhancement
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IXTK120P20T IXTK120P20T IXYS IXT_120P20T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W
Case: PLUS264™
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -120A
Gate-source voltage: ±15V
Reverse recovery time: 300ns
Gate charge: 740nC
On-state resistance: 30mΩ
Power dissipation: 1.04kW
Produkt ist nicht verfügbar
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IXTK102N65X2 IXTK102N65X2 IXYS IXTK(X)102N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; TO264; 450ns
Kind of channel: enhancement
Mounting: THT
Case: TO264
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Gate charge: 152nC
Reverse recovery time: 450ns
On-state resistance: 30mΩ
Drain current: 102A
Drain-source voltage: 650V
Power dissipation: 1.04kW
Produkt ist nicht verfügbar
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IXTX102N65X2 IXTX102N65X2 IXYS IXTK(X)102N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; PLUS247™; 450ns
Kind of channel: enhancement
Mounting: THT
Case: PLUS247™
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Gate charge: 152nC
Reverse recovery time: 450ns
On-state resistance: 30mΩ
Drain current: 102A
Drain-source voltage: 650V
Power dissipation: 1.04kW
Produkt ist nicht verfügbar
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IXTN102N65X2 IXTN102N65X2 IXYS IXTN102N65X2.pdf Category: Transistor drivers
Description: Module; single transistor; 650V; 76A; SOT227B; screw; Idm: 204A
Electrical mounting: screw
Kind of channel: enhancement
Mechanical mounting: screw
Technology: X2-Class
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Polarisation: unipolar
Gate charge: 152nC
Reverse recovery time: 450ns
On-state resistance: 30mΩ
Gate-source voltage: ±40V
Drain current: 76A
Drain-source voltage: 650V
Pulsed drain current: 204A
Power dissipation: 595W
Produkt ist nicht verfügbar
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IXTN120P20T IXTN120P20T IXYS IXTN120P20T.pdf Category: Transistor drivers
Description: Module; single transistor; -200V; -106A; SOT227B; screw; Idm: -400A
Case: SOT227B
Semiconductor structure: single transistor
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Technology: TrenchP™
Polarisation: unipolar
Pulsed drain current: -400A
Drain-source voltage: -200V
Drain current: -106A
Gate-source voltage: ±15V
Reverse recovery time: 300ns
Gate charge: 740nC
On-state resistance: 30mΩ
Power dissipation: 830W
Produkt ist nicht verfügbar
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IXYP35N65C5 IXYS Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYP35N65C5Datasheet.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 326W; TO220-3
Type of transistor: IGBT
Power dissipation: 326W
Case: TO220-3
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Collector current: 35A
Gate-emitter voltage: ±20V
Pulsed collector current: 190A
Collector-emitter voltage: 650V
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DHG60I600HA DHG60I600HA IXYS DHG60I600HA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; tube; Ifsm: 430A; TO247-2; 415W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 430A
Case: TO247-2
Max. forward voltage: 2.41V
Power dissipation: 415W
Reverse recovery time: 35ns
Technology: Sonic FRD™
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DSA15IM200UC DSA15IM200UC IXYS DSA15IM200UC.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 200V; 15A; reel,tape; 75W
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.78V
Max. forward impulse current: 200A
Kind of package: reel; tape
Power dissipation: 75W
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52+1.65 EUR
59+1.46 EUR
100+1.33 EUR
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DSS6-0025BS DSS6-0025BS IXYS DSS6-0025BS.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 25V; 6A; reel,tape; 40W
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 25V
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 0.3V
Max. forward impulse current: 120A
Kind of package: reel; tape
Power dissipation: 40W
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114+0.75 EUR
131+0.65 EUR
250+0.61 EUR
500+0.58 EUR
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LCB110 LCB110 IXYS LCB110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
Mounting: THT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
Relay variant: 1-phase; current source
Produkt ist nicht verfügbar
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CPC1225N CPC1225N IXYS CPC1225N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Case: SOP4
Mounting: SMT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 2ms
Control current max.: 50mA
Body dimensions: 4.09x3.81x2.03mm
Max. operating current: 120mA
On-state resistance: 30Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Produkt ist nicht verfügbar
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LCB111 LCB111 IXYS LCB111.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
Mounting: THT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
Relay variant: 1-phase; current source
Produkt ist nicht verfügbar
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LCB110S LCB110S IXYS LCB110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
Mounting: SMT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
Relay variant: 1-phase; current source
Produkt ist nicht verfügbar
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LAA100L LAA100L IXYS LAA100L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
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50+9.02 EUR
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LAA100 LAA100 IXYS LAA100.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
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LAA100P LAA100P IXYS LAA100.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
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MIXA225PF1200TSF MIXA225PF1200TSF.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 250A
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Collector current: 250A
Pulsed collector current: 500A
Power dissipation: 1.1kW
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Application: fans; for pump; for UPS; motors
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IXFN60N80P description IXFN60N80P.pdf
IXFN60N80P
Hersteller: IXYS
Category: Transistor drivers
Description: Module; single transistor; 800V; 53A; SOT227B; screw; Idm: 150A
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 53A
Pulsed drain current: 150A
Power dissipation: 1.04kW
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Gate charge: 250nC
Kind of channel: enhancement
Reverse recovery time: 250ns
Electrical mounting: screw
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Technology: HiPerFET™; Polar™
Mechanical mounting: screw
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IXFB60N80P IXFB60N80P.pdf
IXFB60N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 60A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 60A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar™
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IXFL60N80P IXFL60N80P.pdf
IXFL60N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 40A; 625W; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 40A
Power dissipation: 625W
Case: ISOPLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar™
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IX526119
Hersteller: IXYS
Category: IGBT modules
Description: Transistor: IGBT; SMPD-B
Type of transistor: IGBT
Case: SMPD-B
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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VVZB135-16IOXT VVZB135-16IOXT.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 1.2kV
Type of semiconductor module: IGBT
Power dissipation: 390W
Technology: X2PT
Mechanical mounting: screw
Pulsed collector current: 225A
Application: Inverter
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/thyristor/IGBT
Case: E2-Pack
Gate-emitter voltage: ±20V
Collector current: 84A
Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor
Produkt ist nicht verfügbar
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IXFK40N90P IXFK(X)40N90P.pdf
IXFK40N90P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 40A; 960W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 40A
Power dissipation: 960W
Case: TO264
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
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IXTH60N20L2 IXTH(T,Q)60N20L2.pdf
IXTH60N20L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO247-3; 330ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 330ns
Produkt ist nicht verfügbar
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IXTH110N10L2 IXTH(T)110N10L2.pdf
IXTH110N10L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 110A; 600W; TO247-3; 230ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 230ns
Features of semiconductor devices: linear power mosfet
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LF21904NTR LF21904NTR.pdf
LF21904NTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; -4.5÷4.5A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -4.5...4.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 10...20V
Voltage class: 600V
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
Produkt ist nicht verfügbar
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LF2103NTR LF2103NTR.pdf
LF2103NTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 10...20V
Voltage class: 600V
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
Produkt ist nicht verfügbar
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LF21064NTR LF21064NTR.pdf
LF21064NTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 10...20V
Voltage class: 600V
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IXFN200N10P description IXFN200N10P.pdf
IXFN200N10P
Hersteller: IXYS
Category: Transistor drivers
Description: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 400A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 200A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 7.5mΩ
Pulsed drain current: 400A
Power dissipation: 680W
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate charge: 235nC
Reverse recovery time: 150ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXXK300N60B3 IXXK(X)300N60B3.pdf
IXXK300N60B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; TO264
Mounting: THT
Case: TO264
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Turn-on time: 137ns
Turn-off time: 430ns
Gate charge: 460nC
Gate-emitter voltage: ±20V
Collector current: 300A
Collector-emitter voltage: 600V
Pulsed collector current: 1.14kA
Power dissipation: 2.3kW
Kind of package: tube
Produkt ist nicht verfügbar
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IXFH180N20X3 IXF_180N20X3_HV.pdf 200VProductBrief.pdf
IXFH180N20X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 180A; 780W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 180A
Power dissipation: 780W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 154nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 94ns
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AnzahlPrivatkunde
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5+17.85 EUR
10+16.81 EUR
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DCK30C1200HB DCK30C1200HB.pdf
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 44A; TO247-3; Ir: 2uA
Mounting: THT
Case: TO247-3
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 2µA
Max. forward voltage: 1.7V
Load current: 44A
Max. forward impulse current: 120A
Max. off-state voltage: 1.2kV
Semiconductor structure: common cathode; double
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DCG45X1200NA DCG45X1200NA.pdf
DCG45X1200NA
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 22Ax2; SOT227B; screw
Case: SOT227B
Kind of package: tube
Features of semiconductor devices: Schottky
Electrical mounting: screw
Mechanical mounting: screw
Technology: SiC
Max. forward voltage: 2.2V
Load current: 22A x2
Max. load current: 44A
Max. off-state voltage: 1.2kV
Semiconductor structure: double independent
Type of semiconductor module: diode
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IXTP12N70X2 ixty2n65x2.pdf
IXTP12N70X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; Idm: 24A; 180W; TO220AB
Mounting: THT
Type of transistor: N-MOSFET
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Drain current: 12A
Drain-source voltage: 700V
Gate charge: 19nC
On-state resistance: 0.3Ω
Gate-source voltage: ±30V
Pulsed drain current: 24A
Power dissipation: 180W
Kind of channel: enhancement
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Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
9+9.46 EUR
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IXTP120N04T2 IXTA(P)120N04T2.pdf
IXTP120N04T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO220AB; 35ns
Reverse recovery time: 35ns
Mounting: THT
Power dissipation: 200W
Gate charge: 58nC
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 6.1mΩ
Produkt ist nicht verfügbar
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IXTP120N075T2 IXTA(P)120N075T2.pdf
IXTP120N075T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 250W; TO220AB; 50ns
Reverse recovery time: 50ns
Mounting: THT
Power dissipation: 250W
Gate charge: 78nC
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 75V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 7.7mΩ
Produkt ist nicht verfügbar
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IXTP12N70X2M ixty2n65x2.pdf
IXTP12N70X2M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; Idm: 24A; 40W; TO220FP
Mounting: THT
Type of transistor: N-MOSFET
Case: TO220FP
Kind of package: tube
Polarisation: unipolar
Drain current: 12A
Drain-source voltage: 700V
Gate charge: 19nC
On-state resistance: 0.3Ω
Gate-source voltage: ±30V
Pulsed drain current: 24A
Power dissipation: 40W
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXGF25N250 littelfuse_discrete_igbts_npt_ixgf25n250_datasheet.pdf.pdf
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 2.5kV; 30A; 114W; i4-pac
Type of transistor: IGBT
Collector-emitter voltage: 2.5kV
Collector current: 30A
Power dissipation: 114W
Case: i4-pac
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Produkt ist nicht verfügbar
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IXCP10M90S IXCP10M90S.pdf
IXCP10M90S
Hersteller: IXYS
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO220AB; 900VDC; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO220AB
Mounting: THT
Operating temperature: -55...150°C
Operating voltage: 900V DC
Power dissipation: 40W
Operating current: 2...100mA
auf Bestellung 175 Stücke:
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16+5.43 EUR
21+4.19 EUR
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IXCY10M90S IXCP10M90S.pdf
IXCY10M90S
Hersteller: IXYS
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 900VDC; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO252
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 900V DC
Power dissipation: 40W
Operating current: 2...100mA
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IXCY10M90S-TRL littelfuse-power-semi-ixcp10m90s-ixcy10m90s?assetguid=c96aeca6-1b81-4b5d-af9f-6cbd5216c35e
Hersteller: IXYS
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 900VDC; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO252
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 900V DC
Power dissipation: 40W
Operating current: 2...100mA
Produkt ist nicht verfügbar
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IXGN320N60A3 IXGN320N60A3.pdf
IXGN320N60A3
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 170A; SOT227B
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Technology: GenX3™; PT
Gate-emitter voltage: ±20V
Collector current: 170A
Pulsed collector current: 1.2kA
Power dissipation: 735W
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
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IXGN100N170 IXGN100N170.pdf
IXGN100N170
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 95A; SOT227B
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Features of semiconductor devices: high voltage
Technology: NPT
Gate-emitter voltage: ±20V
Collector current: 95A
Pulsed collector current: 600A
Power dissipation: 735W
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
Produkt ist nicht verfügbar
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IXGN400N60A3 IXGN400N60A3.pdf
IXGN400N60A3
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 190A; SOT227B
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Technology: GenX3™; PT
Gate-emitter voltage: ±20V
Collector current: 190A
Pulsed collector current: 800A
Power dissipation: 830W
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
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IXGN400N60B3 IXGN400N60B3.pdf
IXGN400N60B3
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Technology: GenX3™; PT
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 1.5kA
Power dissipation: 1kW
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
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IXGN200N170 IXGN200N170.pdf
IXGN200N170
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 160A; SOT227B
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Technology: NPT
Gate-emitter voltage: ±20V
Collector current: 160A
Pulsed collector current: 1.05kA
Power dissipation: 1.25kW
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
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IXGN82N120C3H1
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; Ic: 130A; SOT227B; tube
Case: SOT227B
Kind of package: tube
Type of semiconductor module: IGBT
Collector current: 130A
Produkt ist nicht verfügbar
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IXTP140P05T IXT_140P05T.pdf
IXTP140P05T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; 53ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 298W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Drain-source voltage: -50V
Drain current: -140A
Reverse recovery time: 53ns
Gate charge: 200nC
On-state resistance: 9mΩ
Gate-source voltage: ±15V
auf Bestellung 211 Stücke:
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9+10.21 EUR
10+8.64 EUR
50+7.41 EUR
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IXTH140P05T IXT_140P05T.pdf
IXTH140P05T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; 53ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 298W
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Drain-source voltage: -50V
Drain current: -140A
Reverse recovery time: 53ns
Gate charge: 200nC
On-state resistance: 9mΩ
Gate-source voltage: ±15V
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7+12.82 EUR
8+11.75 EUR
10+9.84 EUR
30+9.51 EUR
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IXTH140P10T IXT_140P10T.pdf
IXTH140P10T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -140A; 568W; 130ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 568W
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Drain-source voltage: -100V
Drain current: -140A
Reverse recovery time: 130ns
Gate charge: 400nC
On-state resistance: 10mΩ
Gate-source voltage: ±15V
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2+42.54 EUR
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PAA140P PAA140.pdf
PAA140P
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
Mounting: SMT
Body dimensions: 9.65x6.35x2.16mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
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PAA140PTR PAA140.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
Mounting: SMT
Body dimensions: 9.65x6.35x2.16mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
Produkt ist nicht verfügbar
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MCMA140PD1600TB MCMA140PD1600TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
MCMA140PD1600TB
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 140A; TO240AA; Ufmax: 1.28V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.28V
Load current: 140A
Max. load current: 220A
Max. forward impulse current: 2.4kA
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
auf Bestellung 33 Stücke:
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2+63.15 EUR
6+56.17 EUR
10+55.92 EUR
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IXTA140P05T IXT_140P05T.pdf
IXTA140P05T
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; TO263
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain current: -140A
Drain-source voltage: -50V
Reverse recovery time: 53ns
Gate charge: 200nC
On-state resistance: 9mΩ
Power dissipation: 298W
Gate-source voltage: ±15V
Kind of package: tube
Case: TO263
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IXTT140P10T IXT_140P10T.pdf
IXTT140P10T
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -140A; 568W; TO268
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain current: -140A
Drain-source voltage: -100V
Reverse recovery time: 130ns
Gate charge: 400nC
On-state resistance: 10mΩ
Power dissipation: 568W
Gate-source voltage: ±15V
Kind of package: tube
Case: TO268
Produkt ist nicht verfügbar
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MDMA140P1600TG MDMA140P1600TG.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 140A; TO240AA; Ufmax: 1.11V
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Load current: 140A
Max. forward voltage: 1.11V
Max. forward impulse current: 2.38kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Case: TO240AA
Produkt ist nicht verfügbar
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MCMA140P1800TA PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 140A; TO240AA; Ufmax: 1.7V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Load current: 140A
Gate current: 150/200mA
Max. forward voltage: 1.7V
Max. off-state voltage: 1.8kV
Kind of package: bulk
Case: TO240AA
Produkt ist nicht verfügbar
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IXTA140P05T-TRL
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 50V; 298W; D2PAK
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Drain-source voltage: 50V
Power dissipation: 298W
Gate-source voltage: 15V
Case: D2PAK
Produkt ist nicht verfügbar
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IXTH200N10T IXTH(Q)200N10T.pdf
IXTH200N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO247-3; 76ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 550W
Case: TO247-3
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 76ns
Produkt ist nicht verfügbar
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IXFX200N10P IXFK(X)200N10P.pdf
IXFX200N10P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTK120P20T IXT_120P20T.pdf
IXTK120P20T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W
Case: PLUS264™
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -120A
Gate-source voltage: ±15V
Reverse recovery time: 300ns
Gate charge: 740nC
On-state resistance: 30mΩ
Power dissipation: 1.04kW
Produkt ist nicht verfügbar
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IXTK102N65X2 IXTK(X)102N65X2.pdf
IXTK102N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; TO264; 450ns
Kind of channel: enhancement
Mounting: THT
Case: TO264
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Gate charge: 152nC
Reverse recovery time: 450ns
On-state resistance: 30mΩ
Drain current: 102A
Drain-source voltage: 650V
Power dissipation: 1.04kW
Produkt ist nicht verfügbar
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IXTX102N65X2 IXTK(X)102N65X2.pdf
IXTX102N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; PLUS247™; 450ns
Kind of channel: enhancement
Mounting: THT
Case: PLUS247™
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Gate charge: 152nC
Reverse recovery time: 450ns
On-state resistance: 30mΩ
Drain current: 102A
Drain-source voltage: 650V
Power dissipation: 1.04kW
Produkt ist nicht verfügbar
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IXTN102N65X2 IXTN102N65X2.pdf
IXTN102N65X2
Hersteller: IXYS
Category: Transistor drivers
Description: Module; single transistor; 650V; 76A; SOT227B; screw; Idm: 204A
Electrical mounting: screw
Kind of channel: enhancement
Mechanical mounting: screw
Technology: X2-Class
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Polarisation: unipolar
Gate charge: 152nC
Reverse recovery time: 450ns
On-state resistance: 30mΩ
Gate-source voltage: ±40V
Drain current: 76A
Drain-source voltage: 650V
Pulsed drain current: 204A
Power dissipation: 595W
Produkt ist nicht verfügbar
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IXTN120P20T IXTN120P20T.pdf
IXTN120P20T
Hersteller: IXYS
Category: Transistor drivers
Description: Module; single transistor; -200V; -106A; SOT227B; screw; Idm: -400A
Case: SOT227B
Semiconductor structure: single transistor
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Technology: TrenchP™
Polarisation: unipolar
Pulsed drain current: -400A
Drain-source voltage: -200V
Drain current: -106A
Gate-source voltage: ±15V
Reverse recovery time: 300ns
Gate charge: 740nC
On-state resistance: 30mΩ
Power dissipation: 830W
Produkt ist nicht verfügbar
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IXYP35N65C5 Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYP35N65C5Datasheet.pdf
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 326W; TO220-3
Type of transistor: IGBT
Power dissipation: 326W
Case: TO220-3
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Collector current: 35A
Gate-emitter voltage: ±20V
Pulsed collector current: 190A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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DHG60I600HA DHG60I600HA.pdf
DHG60I600HA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; tube; Ifsm: 430A; TO247-2; 415W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 430A
Case: TO247-2
Max. forward voltage: 2.41V
Power dissipation: 415W
Reverse recovery time: 35ns
Technology: Sonic FRD™
Produkt ist nicht verfügbar
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DSA15IM200UC DSA15IM200UC.pdf
DSA15IM200UC
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 200V; 15A; reel,tape; 75W
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.78V
Max. forward impulse current: 200A
Kind of package: reel; tape
Power dissipation: 75W
auf Bestellung 1498 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
40+2.17 EUR
52+1.65 EUR
59+1.46 EUR
100+1.33 EUR
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DSS6-0025BS DSS6-0025BS.pdf
DSS6-0025BS
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 25V; 6A; reel,tape; 40W
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 25V
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 0.3V
Max. forward impulse current: 120A
Kind of package: reel; tape
Power dissipation: 40W
auf Bestellung 546 Stücke:
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AnzahlPrivatkunde
82+1.04 EUR
114+0.75 EUR
131+0.65 EUR
250+0.61 EUR
500+0.58 EUR
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LCB110 LCB110.pdf
LCB110
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
Mounting: THT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
Relay variant: 1-phase; current source
Produkt ist nicht verfügbar
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CPC1225N CPC1225N.pdf
CPC1225N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Case: SOP4
Mounting: SMT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 2ms
Control current max.: 50mA
Body dimensions: 4.09x3.81x2.03mm
Max. operating current: 120mA
On-state resistance: 30Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Produkt ist nicht verfügbar
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LCB111 LCB111.pdf
LCB111
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
Mounting: THT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
Relay variant: 1-phase; current source
Produkt ist nicht verfügbar
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LCB110S LCB110.pdf
LCB110S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
Mounting: SMT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
Relay variant: 1-phase; current source
Produkt ist nicht verfügbar
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LAA100L LAA100L.pdf
LAA100L
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
8+10.89 EUR
50+9.02 EUR
100+7.83 EUR
Mindestbestellmenge: 8 Stücke
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LAA100 LAA100.pdf
LAA100
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
7+13.38 EUR
10+11.71 EUR
250+9.48 EUR
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LAA100P LAA100.pdf
LAA100P
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
6+14.17 EUR
Mindestbestellmenge: 6 Stücke
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