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CPC1018NTR CPC1018NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A756C0C7&compId=CPC1018N.pdf?ci_sign=8de638cd4dfb67d338b1795a33a1de15a2c8f02d Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.600VAC
Manufacturer series: OptoMOS
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 2ms
Turn-on time: 3ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 0.6A
On-state resistance: 0.8Ω
Switched voltage: max. 60V DC; max. 600V AC
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
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CPC1019N CPC1019N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75800C7&compId=CPC1019N.pdf?ci_sign=1456f68612229fb12531626e0e32c9f25964cac3 Category: DC Solid State Relays
Description: Relay: solid state; 750mA; max.60VDC; SMT; SOP4; OptoMOS; t(on): 3ms
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 750mA
Switched voltage: max. 60V DC
Manufacturer series: OptoMOS
On-state resistance: 0.6Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Insulation voltage: 1.5kV
Kind of output: MOSFET
auf Bestellung 299 Stücke:
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29+2.53 EUR
35+2.09 EUR
100+1.8 EUR
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IXFA12N65X2 IXFA12N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE99097C8FFDBA138BF&compId=IXF_12N65X2.pdf?ci_sign=ce18cc3b712789b5603f50a0d9269fb42c4ab943 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 18.5nC
Reverse recovery time: 155ns
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IXFP12N65X2 IXFP12N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE99097C8FFDBA138BF&compId=IXF_12N65X2.pdf?ci_sign=ce18cc3b712789b5603f50a0d9269fb42c4ab943 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Gate charge: 18.5nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 155ns
Technology: HiPerFET™; X2-Class
auf Bestellung 233 Stücke:
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16+4.66 EUR
25+2.89 EUR
50+2.7 EUR
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IXFP12N65X2M IXFP12N65X2M IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE99097D0E76B22B8BF&compId=IXFP12N65X2M.pdf?ci_sign=4004da86a326be7c04a430838db3746583c9ea73 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 40W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 18.5nC
Reverse recovery time: 155ns
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IXTA12N65X2 IXTA12N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995BAF2E1F5D438BF&compId=IXT_12N65X2.pdf?ci_sign=ecd37ed45b6873bd45211c34fc6849d39cb58295 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 180W; TO263; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO263
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 270ns
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IXTH12N65X2 IXTH12N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995BAF2E1F5D438BF&compId=IXT_12N65X2.pdf?ci_sign=ecd37ed45b6873bd45211c34fc6849d39cb58295 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 17.7nC
Reverse recovery time: 270ns
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IXTP12N65X2 IXTP12N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995BAF2E1F5D438BF&compId=IXT_12N65X2.pdf?ci_sign=ecd37ed45b6873bd45211c34fc6849d39cb58295 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 180W; TO220AB; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO220AB
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 270ns
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IXTP12N65X2M IXTP12N65X2M IXYS ixty2n65x2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 24A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 17.7nC
Pulsed drain current: 24A
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IXXP12N65B4D1 IXXP12N65B4D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99CE458FEB7591820&compId=IXXP12N65B4D1.pdf?ci_sign=249f71380b36ecccc89266db49385297cce44081 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 12A; 160W; TO220-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 12A
Gate charge: 34nC
Pulsed collector current: 70A
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Turn-on time: 44ns
Turn-off time: 245ns
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IXFA30N60X IXFA30N60X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC33AE48335820&compId=IXFA(P)30N60X.pdf?ci_sign=3f4e92311c2721a4ac346223cdc73b4815585cbc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO263; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO263
On-state resistance: 155mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Power dissipation: 500W
Features of semiconductor devices: ultra junction x-class
Gate charge: 56nC
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IXFH30N60P IXFH30N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDB792F4701820&compId=IXFH(T%2CV)30N60P_S.pdf?ci_sign=f243b293ca1ba8eeb06cd56dcbf7608293a703c8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 500W
Gate charge: 82nC
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IXFH30N60X IXFH30N60X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC2EDA71CB1820&compId=IXFH(T%2CQ)30N60X.pdf?ci_sign=f033c4069747bb2681467501c6f8cd2cd9c6c934 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO247-3; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO247-3
On-state resistance: 155mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Power dissipation: 500W
Features of semiconductor devices: ultra junction x-class
Gate charge: 56nC
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IXFP30N60X IXFP30N60X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC33AE48335820&compId=IXFA(P)30N60X.pdf?ci_sign=3f4e92311c2721a4ac346223cdc73b4815585cbc Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO220AB; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO220AB
On-state resistance: 155mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Power dissipation: 500W
Features of semiconductor devices: ultra junction x-class
Gate charge: 56nC
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IXFR30N60P IXFR30N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6BE5820&compId=IXFR30N60P.pdf?ci_sign=5be33e103d5a63cbc4ef4bfe6326764cd805a948 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 166W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Case: ISOPLUS247™
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 166W
Gate charge: 85nC
auf Bestellung 7 Stücke:
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6+12.24 EUR
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IXKH30N60C5 IXKH30N60C5 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC70D820&compId=IXKH30N60C5.pdf?ci_sign=8051dd0ea17db6300c6cf149e84768e208bbb789 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 310W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO247-3
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 310W
Features of semiconductor devices: super junction coolmos
Gate charge: 53nC
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IXTH30N60L2 IXTH30N60L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE993961825E677F8BF&compId=IXT_30N60L2.pdf?ci_sign=a187da0396ffeb0ca9f228226b1261de24fac5f0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 710ns
Power dissipation: 540W
Features of semiconductor devices: linear power mosfet
Gate charge: 335nC
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IXFA18N60X IXFA18N60X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDF95398E2D820&compId=IXFA(H%2CP)18N60X.pdf?ci_sign=d43d444d5e96d35a699d08922c4b96c997b61fd1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO263; 127ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 320W
Case: TO263
On-state resistance: 0.23Ω
Mounting: SMD
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 127ns
auf Bestellung 75 Stücke:
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23+3.2 EUR
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IXFH18N60P IXFH18N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC0FB820&compId=IXFH18N60P.pdf?ci_sign=bd290d15bb21710ec04d5c26f4876dfbfab4b722 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 360W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 360W
Case: TO247-3
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 282 Stücke:
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11+6.86 EUR
16+4.66 EUR
30+4.65 EUR
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IXFH18N60X IXFH18N60X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDF95398E2D820&compId=IXFA(H%2CP)18N60X.pdf?ci_sign=d43d444d5e96d35a699d08922c4b96c997b61fd1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO247-3; 127ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 320W
Case: TO247-3
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 127ns
auf Bestellung 2 Stücke:
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2+35.75 EUR
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IXFP18N60X IXFP18N60X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDF95398E2D820&compId=IXFA(H%2CP)18N60X.pdf?ci_sign=d43d444d5e96d35a699d08922c4b96c997b61fd1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO220AB; 127ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 127ns
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20+3.58 EUR
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IXTQ18N60P IXTQ18N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F13D3820&compId=IXTQ18N60P.pdf?ci_sign=451a7a0d0279ef24fd00f72f013c8b54076ab464 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 360W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 360W
Case: TO3P
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Gate charge: 49nC
Features of semiconductor devices: standard power mosfet
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IXBH10N170 IXBH10N170 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAE78C511FA9820&compId=IXBH(T)10N170.pdf?ci_sign=0c9673a4b5e2be6f1c4996b39032c9983fb1a0e9 Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 140W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247-3
Gate charge: 30nC
Turn-on time: 63ns
Turn-off time: 1.8µs
Collector current: 10A
Power dissipation: 140W
Pulsed collector current: 40A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.7kV
Kind of package: tube
Technology: BiMOSFET™
auf Bestellung 25 Stücke:
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6+12.16 EUR
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IXBH10N300HV IXBH10N300HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AD0705F5B2EB820&compId=IXBA(H)10N300HV.pdf?ci_sign=66b2088cfab2f34b3e26428941209f928e916c26 Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 10A; 180W; TO247HV
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247HV
Gate charge: 46nC
Turn-on time: 805ns
Turn-off time: 2.13µs
Collector current: 10A
Power dissipation: 180W
Pulsed collector current: 88A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 3kV
Kind of package: tube
Technology: BiMOSFET™
auf Bestellung 14 Stücke:
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1+102.19 EUR
3+90.22 EUR
10+81.08 EUR
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IXGK72N60B3H1 IXGK72N60B3H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFAEEB2C2E5D820&compId=IXGK(X)72N60B3H1.pdf?ci_sign=a5aba8865088ad6a2ff712e7b9f0f02cb4b7ffac Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Turn-on time: 63ns
Turn-off time: 370ns
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IXGR72N60B3H1 IXGR72N60B3H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFAFC0A869B5820&compId=IXGR72N60B3H1.pdf?ci_sign=3c041375a94491207a4b390f85ce524a1ae5bf68 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 40A; 200W; PLUS247™
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 200W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Turn-on time: 63ns
Turn-off time: 370ns
Technology: GenX3™; PT
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IXFP16N50P3 IXFP16N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CED3DAD721478BF&compId=IXF_16N50P3.pdf?ci_sign=3cf1dcbda0c3debe79a98653f51f690525bb49da Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar3™
auf Bestellung 211 Stücke:
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14+5.13 EUR
17+4.38 EUR
50+3.86 EUR
100+3.65 EUR
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IXDD609PI IXDD609PI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 105ns
Turn-on time: 115ns
auf Bestellung 379 Stücke:
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35+2.04 EUR
48+1.5 EUR
54+1.34 EUR
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IXFB52N90P IXFB52N90P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED47DC7EBC6CA18&compId=IXFB52N90P.pdf?ci_sign=a749aeddde2cd217116ff866933808aa3cec515f Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 52A; 1250W; PLUS264™
Polarisation: unipolar
Gate charge: 308nC
Reverse recovery time: 300ns
On-state resistance: 0.16Ω
Drain current: 52A
Gate-source voltage: ±30V
Power dissipation: 1.25kW
Drain-source voltage: 900V
Case: PLUS264™
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Produkt ist nicht verfügbar
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IXFK32N90P IXFK32N90P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC0C0B92EF5820&compId=IXFK(X)32N90P.pdf?ci_sign=9dde976cf23b0d36de82ad17094a5db783c3d5b5 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; TO264
Polarisation: unipolar
Gate charge: 215nC
On-state resistance: 0.3Ω
Drain current: 32A
Power dissipation: 960W
Drain-source voltage: 900V
Case: TO264
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Produkt ist nicht verfügbar
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IXFN52N90P IXFN52N90P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA73091FE0E9820&compId=IXFN52N90P.pdf?ci_sign=c876402e11ac92f3ff5099168a1ab66cd6829552 Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 43A; SOT227B; screw; Idm: 104A
Polarisation: unipolar
Gate charge: 308nC
Reverse recovery time: 300ns
On-state resistance: 0.16Ω
Drain current: 43A
Pulsed drain current: 104A
Gate-source voltage: ±40V
Power dissipation: 890W
Drain-source voltage: 900V
Case: SOT227B
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
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IXFX32N90P IXFX32N90P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC0C0B92EF5820&compId=IXFK(X)32N90P.pdf?ci_sign=9dde976cf23b0d36de82ad17094a5db783c3d5b5 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; PLUS247™
Polarisation: unipolar
Gate charge: 215nC
On-state resistance: 0.3Ω
Drain current: 32A
Power dissipation: 960W
Drain-source voltage: 900V
Case: PLUS247™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Produkt ist nicht verfügbar
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IXGR32N90B2D1 IXGR32N90B2D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAAA0C3ABDBB820&compId=IXGR32N90B2D1.pdf?ci_sign=4e3505393e88d60d0432f68251c3df3d2cf69303 Category: THT IGBT transistors
Description: Transistor: IGBT; HiPerFAST™; 900V; 22A; 160W; PLUS247™
Gate charge: 89nC
Turn-on time: 42ns
Turn-off time: 690ns
Gate-emitter voltage: ±20V
Collector current: 22A
Power dissipation: 160W
Pulsed collector current: 200A
Collector-emitter voltage: 900V
Case: PLUS247™
Technology: HiPerFAST™; PT
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Produkt ist nicht verfügbar
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IX4427MTR IX4427MTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D863802577458BF&compId=IX4426-27-28.pdf?ci_sign=99fa057a30fafec2de1c6f12a1a5e55d8b525d9c Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Kind of integrated circuit: low-side; MOSFET gate driver
Case: DFN8
Type of integrated circuit: driver
Kind of output: non-inverting
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...30V
auf Bestellung 774 Stücke:
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59+1.23 EUR
69+1.05 EUR
100+0.84 EUR
250+0.76 EUR
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CPC1230N CPC1230N IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A3B115CE2158BF&compId=CPC1230N.pdf?ci_sign=b8e00fc01c27504e45ae02215abf73362bf11304 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Kind of output: MOSFET
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 2ms
Turn-off time: 1ms
Relay variant: 1-phase; current source
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
Contacts configuration: SPST-NO
On-state resistance: 30Ω
Type of relay: solid state
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
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CPC1230NTR CPC1230NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232003BC0C7&compId=CPC1230N.pdf?ci_sign=51b764425757047fb9604f3af2a6261f2ca278e1 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Kind of output: MOSFET
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 2ms
Turn-off time: 1ms
Relay variant: 1-phase; current source
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
Contacts configuration: SPST-NO
On-state resistance: 30Ω
Type of relay: solid state
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Produkt ist nicht verfügbar
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CPC1231N CPC1231N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232003D00C7&compId=CPC1231N.pdf?ci_sign=9ca136bb03d2f502faf86ff73f464df2a63aa0f5 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 335 Stücke:
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43+1.69 EUR
100+1.57 EUR
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CPC1231NTR CPC1231NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232003D00C7&compId=CPC1231N.pdf?ci_sign=9ca136bb03d2f502faf86ff73f464df2a63aa0f5 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Kind of output: MOSFET
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 2ms
Turn-off time: 2ms
Relay variant: 1-phase; current source
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
Contacts configuration: SPST-NC
On-state resistance: 30Ω
Type of relay: solid state
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Produkt ist nicht verfügbar
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DSEI60-12A DSEI60-12A IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED49EC282191E2F55EA&compId=DSEI60-12A.pdf?ci_sign=bd633a5ae44e19e1732d359ef0d993c7e59880bb Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 52A; tube; Ifsm: 500A; TO247-2; 189W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 52A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: TO247-2
Max. forward voltage: 2V
Power dissipation: 189W
Reverse recovery time: 35ns
Technology: FRED
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12+6.23 EUR
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LCA710 LCA710 IXYS littelfuse-integrated-circuits-lca710-datasheet?assetguid=c3811d33-57ae-4a3d-b8d6-f328a7772467 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 717 Stücke:
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13+5.72 EUR
50+4.55 EUR
100+4.25 EUR
500+3.99 EUR
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LCA710R LCA710R IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C268EC0C7&compId=LCA710.pdf?ci_sign=f0706be579127326c081b5058aa387a5c884213c Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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LCA710RTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C268EC0C7&compId=LCA710.pdf?ci_sign=f0706be579127326c081b5058aa387a5c884213c Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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LCA710S LCA710S IXYS littelfuse-integrated-circuits-lca710-datasheet?assetguid=c3811d33-57ae-4a3d-b8d6-f328a7772467 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 122 Stücke:
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8+9.4 EUR
50+8.62 EUR
100+7.35 EUR
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LCA710STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C268EC0C7&compId=LCA710.pdf?ci_sign=f0706be579127326c081b5058aa387a5c884213c Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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IXBT24N170 IXBT24N170 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF2EB66970D820&compId=IXBH(t)24N170.pdf?ci_sign=2bee8c9822cc9e5187f0a7830b316f81bec56b83 Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO268
Technology: BiMOSFET™
Mounting: SMD
Case: TO268
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 0.14µC
Turn-on time: 190ns
Turn-off time: 1285ns
Collector current: 24A
Power dissipation: 250W
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.7kV
Pulsed collector current: 230A
Type of transistor: IGBT
auf Bestellung 23 Stücke:
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4+19.65 EUR
10+18.36 EUR
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IXFH140N10P IXFH140N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BABAB2D6ACB820&compId=IXFH(T)140N10P.pdf?ci_sign=5701ce435fe4808d2405b7787e975ae09c0c54dd Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 140A; 600W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
auf Bestellung 17 Stücke:
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8+9.3 EUR
9+8.37 EUR
10+7.39 EUR
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IXFT140N10P IXFT140N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BABAB2D6ACB820&compId=IXFH(T)140N10P.pdf?ci_sign=5701ce435fe4808d2405b7787e975ae09c0c54dd Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO268
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 10 Stücke:
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10+7.15 EUR
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IXTQ140N10P IXTQ140N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF917396E4BA7E27&compId=IXTQ140N10P-DTE.pdf?ci_sign=d1fc712de0ef8b1c18e6bafe16c158a6fb6a90fd Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
Technology: PolarHT™
Produkt ist nicht verfügbar
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IXTT140N10P IXTT140N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF917396E4BA7E27&compId=IXTQ140N10P-DTE.pdf?ci_sign=d1fc712de0ef8b1c18e6bafe16c158a6fb6a90fd Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
Technology: PolarHT™
Produkt ist nicht verfügbar
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CPC3714CTR CPC3714CTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC6F45834445820&compId=CPC3714.pdf?ci_sign=7c8a88a834722e447942ac0190b2f6a9afcdcb0b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.24A; 1.4W; SOT89
Kind of channel: depletion
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SOT89
Polarisation: unipolar
Drain current: 0.24A
Power dissipation: 1.4W
On-state resistance: 14Ω
Gate-source voltage: ±15V
Drain-source voltage: 350V
auf Bestellung 500 Stücke:
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41+1.77 EUR
64+1.12 EUR
121+0.59 EUR
128+0.56 EUR
Mindestbestellmenge: 41
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IXTA4N80P IXTA4N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4FAF0DE3BB820&compId=IXTA(P)4N80P.pdf?ci_sign=a56c5fce943e27469917e977e7f679ed743afc7d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 8A
Power dissipation: 100W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: SMD
Gate charge: 14.2nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 560ns
Features of semiconductor devices: standard power mosfet
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IXTP4N80P IXTP4N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4FAF0DE3BB820&compId=IXTA(P)4N80P.pdf?ci_sign=a56c5fce943e27469917e977e7f679ed743afc7d Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 8A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: THT
Gate charge: 14.2nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 560ns
Features of semiconductor devices: standard power mosfet
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14+5.11 EUR
Mindestbestellmenge: 14
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IXGH4N250C IXYS DS100320(IXGH-GT4N250C).pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 2.5kV; 13A; 150W; TO247-3; Features: high voltage
Mounting: THT
Power dissipation: 150W
Pulsed collector current: 8A
Collector-emitter voltage: 2.5kV
Collector current: 13A
Gate-emitter voltage: ±20V
Case: TO247-3
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Kind of package: tube
Gate charge: 57nC
Turn-off time: 350ns
Produkt ist nicht verfügbar
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IXBK64N250 IXBK64N250 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF10A8A1ED318BF&compId=IXBK(X)64N250.pdf?ci_sign=1acedd6822cd20d6bde99e37f87b21e81c614e11 Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 64A; 735W; TO264
Mounting: THT
Power dissipation: 735W
Pulsed collector current: 600A
Collector-emitter voltage: 2.5kV
Collector current: 64A
Gate-emitter voltage: ±25V
Technology: BiMOSFET™; FRED
Case: TO264
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Kind of package: tube
Gate charge: 400nC
Turn-off time: 397ns
Turn-on time: 632ns
Produkt ist nicht verfügbar
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IXFA44N25X3 IXYS media?resourcetype=datasheets&itemid=d4d53a59-e025-4cd0-9ea6-9898c3e6cbeb&filename=littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_44n25x3_datasheet.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 44A; Idm: 66A; 240W
Mounting: SMD
Power dissipation: 240W
Pulsed drain current: 66A
Gate-source voltage: ±20V
Drain-source voltage: 250V
Technology: HiPerFET™; X3-Class
Case: TO263
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 33nC
Reverse recovery time: 87ns
On-state resistance: 40mΩ
Drain current: 44A
Produkt ist nicht verfügbar
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CPC1020N CPC1020N IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE99590BA41559518BF&compId=cpc1020n.pdf?ci_sign=37cea23d8865e0c6606264b79492a3b1daaee7e7 Category: DC Solid State Relays
Description: Relay: solid state; 1200mA; max.30VDC; max.30VAC; SMT; SOP4; 0.25Ω
Case: SOP4
On-state resistance: 0.25Ω
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 1.2A
Switched voltage: max. 30V AC; max. 30V DC
Insulation voltage: 1.5kV
Relay variant: current source
Kind of output: MOSFET
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
auf Bestellung 305 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.06 EUR
100+5.06 EUR
Mindestbestellmenge: 12
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CLA50E1200HB CLA50E1200HB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0EFAFA56CE8F820&compId=CLA50E1200HB.pdf?ci_sign=83f85c6f2d1e7687021f6e862bc4e05d0cb2ca56 Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
auf Bestellung 204 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.21 EUR
13+5.89 EUR
16+4.65 EUR
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CPC1001N CPC1001N IXYS 1 Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 1.5kV; Uce: 30V
Insulation voltage: 1.5kV
Kind of output: transistor
Type of optocoupler: optocoupler
Mounting: SMD
Case: SOP4
Turn-on time: 1µs
Turn-off time: 30µs
Number of channels: 1
Collector-emitter voltage: 30V
CTR@If: 100-800%@0.2mA
auf Bestellung 674 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.64 EUR
60+1.2 EUR
80+0.9 EUR
100+0.82 EUR
Mindestbestellmenge: 44
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CPC1002N CPC1002N IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995903E8B381558BF&compId=cpc1002n.pdf?ci_sign=59ca255b0e06b398b1d01aad9a01ac20bcce44dc Category: DC Solid State Relays
Description: Relay: solid state; 700mA; max.60VDC; SMT; SOP4; OptoMOS; t(on): 5ms
Case: SOP4
Turn-off time: 2ms
Body dimensions: 4.09x3.81x2.03mm
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 0.55Ω
Max. operating current: 700mA
Switched voltage: max. 60V DC
Insulation voltage: 1.5kV
Relay variant: current source
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
auf Bestellung 1665 Stücke:
Lieferzeit 14-21 Tag (e)
28+2.59 EUR
100+2.19 EUR
500+1.73 EUR
Mindestbestellmenge: 28
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CPC1002NTR CPC1002NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4918F5537E0C7&compId=CPC1002N.pdf?ci_sign=09d4db40bee1ae8a6b564a28716e29f2c573c468 Category: DC Solid State Relays
Description: Relay: solid state; 700mA; max.60VDC; SMT; SOP4; OptoMOS; t(on): 5ms
Case: SOP4
Turn-off time: 2ms
Body dimensions: 4.09x3.81x2.03mm
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 0.55Ω
Max. operating current: 700mA
Switched voltage: max. 60V DC
Insulation voltage: 1.5kV
Relay variant: current source
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CPC1018NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A756C0C7&compId=CPC1018N.pdf?ci_sign=8de638cd4dfb67d338b1795a33a1de15a2c8f02d
CPC1018NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.600VAC
Manufacturer series: OptoMOS
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 2ms
Turn-on time: 3ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 0.6A
On-state resistance: 0.8Ω
Switched voltage: max. 60V DC; max. 600V AC
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Produkt ist nicht verfügbar
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CPC1019N pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75800C7&compId=CPC1019N.pdf?ci_sign=1456f68612229fb12531626e0e32c9f25964cac3
CPC1019N
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 750mA; max.60VDC; SMT; SOP4; OptoMOS; t(on): 3ms
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 750mA
Switched voltage: max. 60V DC
Manufacturer series: OptoMOS
On-state resistance: 0.6Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Insulation voltage: 1.5kV
Kind of output: MOSFET
auf Bestellung 299 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.53 EUR
35+2.09 EUR
100+1.8 EUR
Mindestbestellmenge: 29
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IXFA12N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE99097C8FFDBA138BF&compId=IXF_12N65X2.pdf?ci_sign=ce18cc3b712789b5603f50a0d9269fb42c4ab943
IXFA12N65X2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 18.5nC
Reverse recovery time: 155ns
Produkt ist nicht verfügbar
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IXFP12N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE99097C8FFDBA138BF&compId=IXF_12N65X2.pdf?ci_sign=ce18cc3b712789b5603f50a0d9269fb42c4ab943
IXFP12N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Gate charge: 18.5nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 155ns
Technology: HiPerFET™; X2-Class
auf Bestellung 233 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.66 EUR
25+2.89 EUR
50+2.7 EUR
Mindestbestellmenge: 16
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IXFP12N65X2M pVersion=0046&contRep=ZT&docId=005056AB82531EE99097D0E76B22B8BF&compId=IXFP12N65X2M.pdf?ci_sign=4004da86a326be7c04a430838db3746583c9ea73
IXFP12N65X2M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 40W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 18.5nC
Reverse recovery time: 155ns
Produkt ist nicht verfügbar
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IXTA12N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE995BAF2E1F5D438BF&compId=IXT_12N65X2.pdf?ci_sign=ecd37ed45b6873bd45211c34fc6849d39cb58295
IXTA12N65X2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 180W; TO263; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO263
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 270ns
Produkt ist nicht verfügbar
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IXTH12N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE995BAF2E1F5D438BF&compId=IXT_12N65X2.pdf?ci_sign=ecd37ed45b6873bd45211c34fc6849d39cb58295
IXTH12N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 17.7nC
Reverse recovery time: 270ns
Produkt ist nicht verfügbar
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IXTP12N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE995BAF2E1F5D438BF&compId=IXT_12N65X2.pdf?ci_sign=ecd37ed45b6873bd45211c34fc6849d39cb58295
IXTP12N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 180W; TO220AB; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO220AB
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 270ns
Produkt ist nicht verfügbar
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IXTP12N65X2M ixty2n65x2.pdf
IXTP12N65X2M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 24A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 17.7nC
Pulsed drain current: 24A
Produkt ist nicht verfügbar
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IXXP12N65B4D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99CE458FEB7591820&compId=IXXP12N65B4D1.pdf?ci_sign=249f71380b36ecccc89266db49385297cce44081
IXXP12N65B4D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 12A; 160W; TO220-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 12A
Gate charge: 34nC
Pulsed collector current: 70A
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Turn-on time: 44ns
Turn-off time: 245ns
Produkt ist nicht verfügbar
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IXFA30N60X pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC33AE48335820&compId=IXFA(P)30N60X.pdf?ci_sign=3f4e92311c2721a4ac346223cdc73b4815585cbc
IXFA30N60X
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO263; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO263
On-state resistance: 155mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Power dissipation: 500W
Features of semiconductor devices: ultra junction x-class
Gate charge: 56nC
Produkt ist nicht verfügbar
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IXFH30N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDB792F4701820&compId=IXFH(T%2CV)30N60P_S.pdf?ci_sign=f243b293ca1ba8eeb06cd56dcbf7608293a703c8
IXFH30N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 500W
Gate charge: 82nC
Produkt ist nicht verfügbar
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IXFH30N60X pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC2EDA71CB1820&compId=IXFH(T%2CQ)30N60X.pdf?ci_sign=f033c4069747bb2681467501c6f8cd2cd9c6c934
IXFH30N60X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO247-3; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO247-3
On-state resistance: 155mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Power dissipation: 500W
Features of semiconductor devices: ultra junction x-class
Gate charge: 56nC
Produkt ist nicht verfügbar
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IXFP30N60X pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC33AE48335820&compId=IXFA(P)30N60X.pdf?ci_sign=3f4e92311c2721a4ac346223cdc73b4815585cbc
IXFP30N60X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO220AB; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO220AB
On-state resistance: 155mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Power dissipation: 500W
Features of semiconductor devices: ultra junction x-class
Gate charge: 56nC
Produkt ist nicht verfügbar
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IXFR30N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6BE5820&compId=IXFR30N60P.pdf?ci_sign=5be33e103d5a63cbc4ef4bfe6326764cd805a948
IXFR30N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 166W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Case: ISOPLUS247™
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 166W
Gate charge: 85nC
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.24 EUR
Mindestbestellmenge: 6
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IXKH30N60C5 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC70D820&compId=IXKH30N60C5.pdf?ci_sign=8051dd0ea17db6300c6cf149e84768e208bbb789
IXKH30N60C5
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 310W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO247-3
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 310W
Features of semiconductor devices: super junction coolmos
Gate charge: 53nC
Produkt ist nicht verfügbar
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IXTH30N60L2 pVersion=0046&contRep=ZT&docId=005056AB82531EE993961825E677F8BF&compId=IXT_30N60L2.pdf?ci_sign=a187da0396ffeb0ca9f228226b1261de24fac5f0
IXTH30N60L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 710ns
Power dissipation: 540W
Features of semiconductor devices: linear power mosfet
Gate charge: 335nC
Produkt ist nicht verfügbar
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IXFA18N60X pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDF95398E2D820&compId=IXFA(H%2CP)18N60X.pdf?ci_sign=d43d444d5e96d35a699d08922c4b96c997b61fd1
IXFA18N60X
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO263; 127ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 320W
Case: TO263
On-state resistance: 0.23Ω
Mounting: SMD
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 127ns
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.2 EUR
Mindestbestellmenge: 23
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IXFH18N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC0FB820&compId=IXFH18N60P.pdf?ci_sign=bd290d15bb21710ec04d5c26f4876dfbfab4b722
IXFH18N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 360W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 360W
Case: TO247-3
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 282 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.86 EUR
16+4.66 EUR
30+4.65 EUR
Mindestbestellmenge: 11
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IXFH18N60X pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDF95398E2D820&compId=IXFA(H%2CP)18N60X.pdf?ci_sign=d43d444d5e96d35a699d08922c4b96c997b61fd1
IXFH18N60X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO247-3; 127ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 320W
Case: TO247-3
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 127ns
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXFP18N60X pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDF95398E2D820&compId=IXFA(H%2CP)18N60X.pdf?ci_sign=d43d444d5e96d35a699d08922c4b96c997b61fd1
IXFP18N60X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO220AB; 127ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 127ns
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.58 EUR
Mindestbestellmenge: 20
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IXTQ18N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F13D3820&compId=IXTQ18N60P.pdf?ci_sign=451a7a0d0279ef24fd00f72f013c8b54076ab464
IXTQ18N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 360W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 360W
Case: TO3P
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Gate charge: 49nC
Features of semiconductor devices: standard power mosfet
Produkt ist nicht verfügbar
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IXBH10N170 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAE78C511FA9820&compId=IXBH(T)10N170.pdf?ci_sign=0c9673a4b5e2be6f1c4996b39032c9983fb1a0e9
IXBH10N170
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 140W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247-3
Gate charge: 30nC
Turn-on time: 63ns
Turn-off time: 1.8µs
Collector current: 10A
Power dissipation: 140W
Pulsed collector current: 40A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.7kV
Kind of package: tube
Technology: BiMOSFET™
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.16 EUR
Mindestbestellmenge: 6
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IXBH10N300HV pVersion=0046&contRep=ZT&docId=005056AB82531ED99AD0705F5B2EB820&compId=IXBA(H)10N300HV.pdf?ci_sign=66b2088cfab2f34b3e26428941209f928e916c26
IXBH10N300HV
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 10A; 180W; TO247HV
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247HV
Gate charge: 46nC
Turn-on time: 805ns
Turn-off time: 2.13µs
Collector current: 10A
Power dissipation: 180W
Pulsed collector current: 88A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 3kV
Kind of package: tube
Technology: BiMOSFET™
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+102.19 EUR
3+90.22 EUR
10+81.08 EUR
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IXGK72N60B3H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFAEEB2C2E5D820&compId=IXGK(X)72N60B3H1.pdf?ci_sign=a5aba8865088ad6a2ff712e7b9f0f02cb4b7ffac
IXGK72N60B3H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Turn-on time: 63ns
Turn-off time: 370ns
Produkt ist nicht verfügbar
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IXGR72N60B3H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFAFC0A869B5820&compId=IXGR72N60B3H1.pdf?ci_sign=3c041375a94491207a4b390f85ce524a1ae5bf68
IXGR72N60B3H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 40A; 200W; PLUS247™
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 200W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Turn-on time: 63ns
Turn-off time: 370ns
Technology: GenX3™; PT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFP16N50P3 pVersion=0046&contRep=ZT&docId=005056AB82531EE98CED3DAD721478BF&compId=IXF_16N50P3.pdf?ci_sign=3cf1dcbda0c3debe79a98653f51f690525bb49da
IXFP16N50P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar3™
auf Bestellung 211 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.13 EUR
17+4.38 EUR
50+3.86 EUR
100+3.65 EUR
Mindestbestellmenge: 14
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IXDD609PI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6
IXDD609PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 105ns
Turn-on time: 115ns
auf Bestellung 379 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.04 EUR
48+1.5 EUR
54+1.34 EUR
Mindestbestellmenge: 35
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IXFB52N90P pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED47DC7EBC6CA18&compId=IXFB52N90P.pdf?ci_sign=a749aeddde2cd217116ff866933808aa3cec515f
IXFB52N90P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 52A; 1250W; PLUS264™
Polarisation: unipolar
Gate charge: 308nC
Reverse recovery time: 300ns
On-state resistance: 0.16Ω
Drain current: 52A
Gate-source voltage: ±30V
Power dissipation: 1.25kW
Drain-source voltage: 900V
Case: PLUS264™
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Produkt ist nicht verfügbar
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IXFK32N90P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC0C0B92EF5820&compId=IXFK(X)32N90P.pdf?ci_sign=9dde976cf23b0d36de82ad17094a5db783c3d5b5
IXFK32N90P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; TO264
Polarisation: unipolar
Gate charge: 215nC
On-state resistance: 0.3Ω
Drain current: 32A
Power dissipation: 960W
Drain-source voltage: 900V
Case: TO264
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN52N90P pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA73091FE0E9820&compId=IXFN52N90P.pdf?ci_sign=c876402e11ac92f3ff5099168a1ab66cd6829552
IXFN52N90P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 43A; SOT227B; screw; Idm: 104A
Polarisation: unipolar
Gate charge: 308nC
Reverse recovery time: 300ns
On-state resistance: 0.16Ω
Drain current: 43A
Pulsed drain current: 104A
Gate-source voltage: ±40V
Power dissipation: 890W
Drain-source voltage: 900V
Case: SOT227B
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
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IXFX32N90P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC0C0B92EF5820&compId=IXFK(X)32N90P.pdf?ci_sign=9dde976cf23b0d36de82ad17094a5db783c3d5b5
IXFX32N90P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; PLUS247™
Polarisation: unipolar
Gate charge: 215nC
On-state resistance: 0.3Ω
Drain current: 32A
Power dissipation: 960W
Drain-source voltage: 900V
Case: PLUS247™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Produkt ist nicht verfügbar
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IXGR32N90B2D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAAA0C3ABDBB820&compId=IXGR32N90B2D1.pdf?ci_sign=4e3505393e88d60d0432f68251c3df3d2cf69303
IXGR32N90B2D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; HiPerFAST™; 900V; 22A; 160W; PLUS247™
Gate charge: 89nC
Turn-on time: 42ns
Turn-off time: 690ns
Gate-emitter voltage: ±20V
Collector current: 22A
Power dissipation: 160W
Pulsed collector current: 200A
Collector-emitter voltage: 900V
Case: PLUS247™
Technology: HiPerFAST™; PT
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Produkt ist nicht verfügbar
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IX4427MTR pVersion=0046&contRep=ZT&docId=005056AB82531EE98D863802577458BF&compId=IX4426-27-28.pdf?ci_sign=99fa057a30fafec2de1c6f12a1a5e55d8b525d9c
IX4427MTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Kind of integrated circuit: low-side; MOSFET gate driver
Case: DFN8
Type of integrated circuit: driver
Kind of output: non-inverting
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...30V
auf Bestellung 774 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+2.03 EUR
59+1.23 EUR
69+1.05 EUR
100+0.84 EUR
250+0.76 EUR
Mindestbestellmenge: 36
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CPC1230N pVersion=0046&contRep=ZT&docId=005056AB82531EE995A3B115CE2158BF&compId=CPC1230N.pdf?ci_sign=b8e00fc01c27504e45ae02215abf73362bf11304
CPC1230N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Kind of output: MOSFET
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 2ms
Turn-off time: 1ms
Relay variant: 1-phase; current source
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
Contacts configuration: SPST-NO
On-state resistance: 30Ω
Type of relay: solid state
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.51 EUR
Mindestbestellmenge: 13
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CPC1230NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232003BC0C7&compId=CPC1230N.pdf?ci_sign=51b764425757047fb9604f3af2a6261f2ca278e1
CPC1230NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Kind of output: MOSFET
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 2ms
Turn-off time: 1ms
Relay variant: 1-phase; current source
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
Contacts configuration: SPST-NO
On-state resistance: 30Ω
Type of relay: solid state
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Produkt ist nicht verfügbar
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CPC1231N pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232003D00C7&compId=CPC1231N.pdf?ci_sign=9ca136bb03d2f502faf86ff73f464df2a63aa0f5
CPC1231N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 335 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.14 EUR
43+1.69 EUR
100+1.57 EUR
Mindestbestellmenge: 34
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CPC1231NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232003D00C7&compId=CPC1231N.pdf?ci_sign=9ca136bb03d2f502faf86ff73f464df2a63aa0f5
CPC1231NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Kind of output: MOSFET
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 2ms
Turn-off time: 2ms
Relay variant: 1-phase; current source
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
Contacts configuration: SPST-NC
On-state resistance: 30Ω
Type of relay: solid state
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Produkt ist nicht verfügbar
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DSEI60-12A pVersion=0046&contRep=ZT&docId=005056AB752F1ED49EC282191E2F55EA&compId=DSEI60-12A.pdf?ci_sign=bd633a5ae44e19e1732d359ef0d993c7e59880bb
DSEI60-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 52A; tube; Ifsm: 500A; TO247-2; 189W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 52A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: TO247-2
Max. forward voltage: 2V
Power dissipation: 189W
Reverse recovery time: 35ns
Technology: FRED
auf Bestellung 225 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.23 EUR
Mindestbestellmenge: 12
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LCA710 littelfuse-integrated-circuits-lca710-datasheet?assetguid=c3811d33-57ae-4a3d-b8d6-f328a7772467
LCA710
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 717 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.72 EUR
50+4.55 EUR
100+4.25 EUR
500+3.99 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
LCA710R pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C268EC0C7&compId=LCA710.pdf?ci_sign=f0706be579127326c081b5058aa387a5c884213c
LCA710R
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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LCA710RTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C268EC0C7&compId=LCA710.pdf?ci_sign=f0706be579127326c081b5058aa387a5c884213c
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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LCA710S littelfuse-integrated-circuits-lca710-datasheet?assetguid=c3811d33-57ae-4a3d-b8d6-f328a7772467
LCA710S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 122 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.4 EUR
50+8.62 EUR
100+7.35 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
LCA710STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C268EC0C7&compId=LCA710.pdf?ci_sign=f0706be579127326c081b5058aa387a5c884213c
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXBT24N170 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF2EB66970D820&compId=IXBH(t)24N170.pdf?ci_sign=2bee8c9822cc9e5187f0a7830b316f81bec56b83
IXBT24N170
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO268
Technology: BiMOSFET™
Mounting: SMD
Case: TO268
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 0.14µC
Turn-on time: 190ns
Turn-off time: 1285ns
Collector current: 24A
Power dissipation: 250W
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.7kV
Pulsed collector current: 230A
Type of transistor: IGBT
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+19.65 EUR
10+18.36 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXFH140N10P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BABAB2D6ACB820&compId=IXFH(T)140N10P.pdf?ci_sign=5701ce435fe4808d2405b7787e975ae09c0c54dd
IXFH140N10P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 140A; 600W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.3 EUR
9+8.37 EUR
10+7.39 EUR
Mindestbestellmenge: 8
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IXFT140N10P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BABAB2D6ACB820&compId=IXFH(T)140N10P.pdf?ci_sign=5701ce435fe4808d2405b7787e975ae09c0c54dd
IXFT140N10P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO268
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.15 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IXTQ140N10P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF917396E4BA7E27&compId=IXTQ140N10P-DTE.pdf?ci_sign=d1fc712de0ef8b1c18e6bafe16c158a6fb6a90fd
IXTQ140N10P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
Technology: PolarHT™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTT140N10P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF917396E4BA7E27&compId=IXTQ140N10P-DTE.pdf?ci_sign=d1fc712de0ef8b1c18e6bafe16c158a6fb6a90fd
IXTT140N10P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
Technology: PolarHT™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CPC3714CTR pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC6F45834445820&compId=CPC3714.pdf?ci_sign=7c8a88a834722e447942ac0190b2f6a9afcdcb0b
CPC3714CTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.24A; 1.4W; SOT89
Kind of channel: depletion
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SOT89
Polarisation: unipolar
Drain current: 0.24A
Power dissipation: 1.4W
On-state resistance: 14Ω
Gate-source voltage: ±15V
Drain-source voltage: 350V
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.77 EUR
64+1.12 EUR
121+0.59 EUR
128+0.56 EUR
Mindestbestellmenge: 41
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IXTA4N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4FAF0DE3BB820&compId=IXTA(P)4N80P.pdf?ci_sign=a56c5fce943e27469917e977e7f679ed743afc7d
IXTA4N80P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 8A
Power dissipation: 100W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: SMD
Gate charge: 14.2nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 560ns
Features of semiconductor devices: standard power mosfet
Produkt ist nicht verfügbar
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IXTP4N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4FAF0DE3BB820&compId=IXTA(P)4N80P.pdf?ci_sign=a56c5fce943e27469917e977e7f679ed743afc7d
IXTP4N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 8A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: THT
Gate charge: 14.2nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 560ns
Features of semiconductor devices: standard power mosfet
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.11 EUR
Mindestbestellmenge: 14
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IXGH4N250C DS100320(IXGH-GT4N250C).pdf
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 2.5kV; 13A; 150W; TO247-3; Features: high voltage
Mounting: THT
Power dissipation: 150W
Pulsed collector current: 8A
Collector-emitter voltage: 2.5kV
Collector current: 13A
Gate-emitter voltage: ±20V
Case: TO247-3
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Kind of package: tube
Gate charge: 57nC
Turn-off time: 350ns
Produkt ist nicht verfügbar
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IXBK64N250 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF10A8A1ED318BF&compId=IXBK(X)64N250.pdf?ci_sign=1acedd6822cd20d6bde99e37f87b21e81c614e11
IXBK64N250
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 64A; 735W; TO264
Mounting: THT
Power dissipation: 735W
Pulsed collector current: 600A
Collector-emitter voltage: 2.5kV
Collector current: 64A
Gate-emitter voltage: ±25V
Technology: BiMOSFET™; FRED
Case: TO264
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Kind of package: tube
Gate charge: 400nC
Turn-off time: 397ns
Turn-on time: 632ns
Produkt ist nicht verfügbar
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IXFA44N25X3 media?resourcetype=datasheets&itemid=d4d53a59-e025-4cd0-9ea6-9898c3e6cbeb&filename=littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_44n25x3_datasheet.pdf
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 44A; Idm: 66A; 240W
Mounting: SMD
Power dissipation: 240W
Pulsed drain current: 66A
Gate-source voltage: ±20V
Drain-source voltage: 250V
Technology: HiPerFET™; X3-Class
Case: TO263
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 33nC
Reverse recovery time: 87ns
On-state resistance: 40mΩ
Drain current: 44A
Produkt ist nicht verfügbar
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CPC1020N pVersion=0046&contRep=ZT&docId=005056AB82531EE99590BA41559518BF&compId=cpc1020n.pdf?ci_sign=37cea23d8865e0c6606264b79492a3b1daaee7e7
CPC1020N
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 1200mA; max.30VDC; max.30VAC; SMT; SOP4; 0.25Ω
Case: SOP4
On-state resistance: 0.25Ω
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 1.2A
Switched voltage: max. 30V AC; max. 30V DC
Insulation voltage: 1.5kV
Relay variant: current source
Kind of output: MOSFET
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
auf Bestellung 305 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.06 EUR
100+5.06 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
CLA50E1200HB pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0EFAFA56CE8F820&compId=CLA50E1200HB.pdf?ci_sign=83f85c6f2d1e7687021f6e862bc4e05d0cb2ca56
CLA50E1200HB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
auf Bestellung 204 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.21 EUR
13+5.89 EUR
16+4.65 EUR
Mindestbestellmenge: 12
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CPC1001N 1
CPC1001N
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 1.5kV; Uce: 30V
Insulation voltage: 1.5kV
Kind of output: transistor
Type of optocoupler: optocoupler
Mounting: SMD
Case: SOP4
Turn-on time: 1µs
Turn-off time: 30µs
Number of channels: 1
Collector-emitter voltage: 30V
CTR@If: 100-800%@0.2mA
auf Bestellung 674 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.64 EUR
60+1.2 EUR
80+0.9 EUR
100+0.82 EUR
Mindestbestellmenge: 44
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CPC1002N pVersion=0046&contRep=ZT&docId=005056AB82531EE995903E8B381558BF&compId=cpc1002n.pdf?ci_sign=59ca255b0e06b398b1d01aad9a01ac20bcce44dc
CPC1002N
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 700mA; max.60VDC; SMT; SOP4; OptoMOS; t(on): 5ms
Case: SOP4
Turn-off time: 2ms
Body dimensions: 4.09x3.81x2.03mm
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 0.55Ω
Max. operating current: 700mA
Switched voltage: max. 60V DC
Insulation voltage: 1.5kV
Relay variant: current source
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
auf Bestellung 1665 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.59 EUR
100+2.19 EUR
500+1.73 EUR
Mindestbestellmenge: 28
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CPC1002NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4918F5537E0C7&compId=CPC1002N.pdf?ci_sign=09d4db40bee1ae8a6b564a28716e29f2c573c468
CPC1002NTR
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 700mA; max.60VDC; SMT; SOP4; OptoMOS; t(on): 5ms
Case: SOP4
Turn-off time: 2ms
Body dimensions: 4.09x3.81x2.03mm
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 0.55Ω
Max. operating current: 700mA
Switched voltage: max. 60V DC
Insulation voltage: 1.5kV
Relay variant: current source
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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