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IXTH02N450HV IXTH02N450HV IXYS IXTH02N450HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 113W; TO247HV; 1.6us
Case: TO247HV
Mounting: THT
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
Drain current: 0.2A
On-state resistance: 625Ω
Power dissipation: 113W
Drain-source voltage: 4.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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IXTX1R4N450HV IXYS IXTX1R4N450HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1.4A; Idm: 5A; 960W; 660ns
Case: TO247PLUS-HV
Mounting: THT
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 88nC
Reverse recovery time: 660ns
Drain current: 1.4A
Pulsed drain current: 5A
Gate-source voltage: ±20V
On-state resistance: 40Ω
Power dissipation: 960W
Drain-source voltage: 4.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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IXKC23N60C5 IXKC23N60C5 IXYS IXKC23N60C5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 147W; ISOPLUS220™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 147W
Case: ISOPLUS220™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
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IXBT12N300HV IXBT12N300HV IXYS littelfuse-discrete-igbts-ixb-12n300hv-datasheet?assetguid=ab24dcf4-1e21-4218-9669-c9c01e669b5c Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 30A; 160W; TO268
Case: TO268
Mounting: SMD
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Gate charge: 62nC
Turn-on time: 64ns
Turn-off time: 180ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 98A
Power dissipation: 160W
Collector-emitter voltage: 3kV
Technology: BiMOSFET™
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MCD56-16io8B IXYS MCD56-16io8B.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 60A; TO240AA; Ufmax: 1.24V; bulk
Mechanical mounting: screw
Gate current: 100/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.24V
Load current: 60A
Max. load current: 100A
Max. forward impulse current: 1.5kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Case: TO240AA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
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MCD56-16IO1B IXYS MCD56-16IO1B.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 60A; TO240AA; Ufmax: 1.24V; bulk
Mechanical mounting: screw
Gate current: 100/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.24V
Load current: 60A
Max. load current: 100A
Max. forward impulse current: 1.5kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Case: TO240AA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
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MCC56-16io8B MCC56-16io8B IXYS L075.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 60A; TO240AA; Ufmax: 1.57V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.57V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Max. forward impulse current: 1.6kA
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CS20-16IO1 CS20-16IO1 IXYS CS20-12IO1-DTE.pdf CS20-16io1.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 31A; 20A; Igt: 50mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 31A
Load current: 20A
Gate current: 50mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 260A
auf Bestellung 151 Stücke:
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9+9.89 EUR
12+7.27 EUR
13+6.7 EUR
20+6.22 EUR
30+5.99 EUR
120+5.55 EUR
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CS30-12IO1 CS30-12IO1 IXYS CS30-12IO1-DTE.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tube
Max. off-state voltage: 1.2kV
Load current: 30A
Case: TO247AD
Mounting: THT
Max. load current: 47A
Max. forward impulse current: 0.4kA
Kind of package: tube
Gate current: 55mA
Type of thyristor: thyristor
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CS30-16IO1 CS30-16IO1 IXYS CS30-12IO1-DTE.pdf description Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tube
Case: TO247AD
Mounting: THT
Kind of package: tube
Gate current: 55mA
Max. off-state voltage: 1.6kV
Load current: 30A
Max. load current: 47A
Max. forward impulse current: 0.4kA
Type of thyristor: thyristor
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14+6.49 EUR
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CS30-14IO1 CS30-14IO1 IXYS CS30-12IO1-DTE.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.4kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tube
Case: TO247AD
Mounting: THT
Kind of package: tube
Gate current: 55mA
Max. off-state voltage: 1.4kV
Load current: 30A
Max. load current: 47A
Max. forward impulse current: 0.4kA
Type of thyristor: thyristor
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CS20-12IO1 CS20-12IO1 IXYS CS20-12IO1-DTE.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 50mA; TO247AD; THT; tube
Case: TO247AD
Mounting: THT
Kind of package: tube
Gate current: 50mA
Max. off-state voltage: 1.2kV
Load current: 20A
Max. load current: 31A
Max. forward impulse current: 260A
Type of thyristor: thyristor
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10+8.78 EUR
11+8.15 EUR
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13+6.97 EUR
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IXTH130N20T IXTH130N20T IXYS IXTQ130N20T_IXTH130N20T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 200V; 75A; Idm: 320A; 830W
Type of transistor: N-MOSFET
Technology: Trench™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 75A
Pulsed drain current: 320A
Power dissipation: 830W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 150ns
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DSA240X150NA DSA240X150NA IXYS DSA240X150NA.pdf Category: Diode modules
Description: Module: diode; double independent; 150V; If: 120Ax2; SOT227B; screw
Electrical mounting: screw
Max. forward voltage: 0.85V
Load current: 120A x2
Max. off-state voltage: 150V
Max. forward impulse current: 1.6kA
Max. load current: 240A
Kind of package: tube
Semiconductor structure: double independent
Type of semiconductor module: diode
Case: SOT227B
Mechanical mounting: screw
Features of semiconductor devices: Schottky
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CPC3982TTR IXYS CPC3982?assetguid=E1F44516-E781-43A7-ABB7-563255C890B1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 0.15A; 0.4W; SOT23
Power dissipation: 0.4W
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Drain current: 0.15A
Gate-source voltage: ±15V
On-state resistance: 380Ω
Drain-source voltage: 800V
Kind of channel: depletion
Type of transistor: N-MOSFET
Polarisation: unipolar
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139+0.61 EUR
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PLA193 PLA193 IXYS PLA193.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
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PLA193E PLA193E IXYS PLA193.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
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20+4.44 EUR
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PLA193S PLA193S IXYS PLA193.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
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PLA193STR IXYS PLA193.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
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IXFH24N90P IXFH24N90P IXYS IXF_24N90P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 24A; 660W; TO247-3
Type of transistor: N-MOSFET
Power dissipation: 660W
Case: TO247-3
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Drain current: 24A
Kind of channel: enhancement
Drain-source voltage: 900V
On-state resistance: 0.42Ω
Polarisation: unipolar
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6+15.62 EUR
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IXFR24N90P IXFR24N90P IXYS IXFR24N90P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 13A; 230W; ISOPLUS247™
Type of transistor: N-MOSFET
Power dissipation: 230W
Case: ISOPLUS247™
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Drain current: 13A
Kind of channel: enhancement
Drain-source voltage: 900V
On-state resistance: 0.46Ω
Polarisation: unipolar
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DSI30-16A DSI30-16A IXYS DSI30-16A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 30A; tube; Ifsm: 255A; TO220AC; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 30A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.25V
Max. forward impulse current: 255A
Power dissipation: 160W
Kind of package: tube
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DSI30-16AS DSI30-16AS IXYS DSI30-16AS.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.6kV
Load current: 30A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.25V
Max. forward impulse current: 255A
Power dissipation: 160W
Kind of package: reel; tape
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DSI30-16AS-TUB DSI30-16AS-TUB IXYS DSI30-16AS.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.6kV
Load current: 30A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.25V
Max. forward impulse current: 255A
Power dissipation: 160W
Kind of package: tube
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DPG30C400PB DPG30C400PB IXYS media?resourcetype=datasheets&itemid=EFDD0730-3DB0-4D77-9198-01A406BAA107&filename=Littelfuse-Power-Semiconductors-DPG30C400PB-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15Ax2; tube; Ifsm: 190A; TO220AB; 90W
Mounting: THT
Case: TO220AB
Kind of package: tube
Technology: HiPerFRED™ 2nd Gen
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Type of diode: rectifying
Reverse recovery time: 45ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 1.39V
Max. forward impulse current: 190A
Load current: 15A x2
Power dissipation: 90W
Max. off-state voltage: 0.4kV
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MD16110A-DKM2MM IXYS littelfuse_power_semiconductor_rectifier_module_circuit_package_a_datasheet.pdf?assetguid=7ed5c66f-3580-4b5e-91ee-69f455430ce8 Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 110A; package A
Kind of package: bulk
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
Mechanical mounting: screw
Case: package A
Electrical mounting: screw
Max. forward voltage: 1.6V
Load current: 110A
Max. load current: 170A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 2.5kA
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DSA60C45HB DSA60C45HB IXYS DSA60C45HB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO247-3; Ufmax: 0.66V
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 0.55kA
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 160W
Load current: 30A x2
Max. forward voltage: 0.66V
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19+4.64 EUR
21+4.11 EUR
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DSA60C60PB DSA60C60PB IXYS DSA60C60PB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.77V
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 0.45kA
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 175W
Heatsink thickness: 1.14...1.39mm
Load current: 30A x2
Max. forward voltage: 0.77V
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DSA60C150PB DSA60C150PB IXYS DSA60C150PB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 30Ax2; TO220AB; Ufmax: 0.8V
Type of diode: Schottky rectifying
Max. off-state voltage: 150V
Max. forward impulse current: 390A
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 175W
Heatsink thickness: 1.14...1.39mm
Load current: 30A x2
Max. forward voltage: 0.8V
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DSA60C100PB DSA60C100PB IXYS DSA60C100PB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO220AB; Ufmax: 0.78V
Type of diode: Schottky rectifying
Max. off-state voltage: 0.1kV
Max. forward impulse current: 0.44kA
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 175W
Heatsink thickness: 1.14...1.39mm
Load current: 30A x2
Max. forward voltage: 0.78V
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DSA60C45PB DSA60C45PB IXYS DSA60C45PB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220AB; Ufmax: 0.67V
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 490A
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 175W
Heatsink thickness: 1.14...1.39mm
Load current: 30A x2
Max. forward voltage: 0.67V
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DSA60C60HB DSA60C60HB IXYS DSA60C60HB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO247-3; Ufmax: 0.75V
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 0.55kA
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 160W
Load current: 30A x2
Max. forward voltage: 0.75V
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DSA30C45PC DSA30C45PC IXYS DSA30C45PC.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 15Ax2; reel,tape; 85W
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.63V
Max. forward impulse current: 340A
Kind of package: reel; tape
Power dissipation: 85W
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114+0.75 EUR
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IXGX82N120A3 IXGX82N120A3 IXYS IXGK(x)82N120A3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; PLUS247™
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 1.25kW
Gate charge: 340nC
Technology: GenX3™; PT
Pulsed collector current: 580A
Type of transistor: IGBT
Turn-on time: 109ns
Kind of package: tube
Case: PLUS247™
Turn-off time: 1.59µs
Gate-emitter voltage: ±20V
Collector current: 82A
Produkt ist nicht verfügbar
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IXGX82N120B3 IXGX82N120B3 IXYS IXGK(X)82N120B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; PLUS247™
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 1.25kW
Gate charge: 0.35µC
Technology: GenX3™; PT
Pulsed collector current: 500A
Type of transistor: IGBT
Turn-on time: 112ns
Kind of package: tube
Case: PLUS247™
Turn-off time: 760ns
Gate-emitter voltage: ±20V
Collector current: 82A
Produkt ist nicht verfügbar
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LOC111S LOC111S IXYS LOC111.pdf Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; 1A
Kind of output: transistor
Mounting: SMD
Type of optocoupler: optocoupler
Number of channels: 1
Trigger current: 1A
Insulation voltage: 3.75kV
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5+17.02 EUR
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LCB111STR IXYS LCB111.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Case: DIP6
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NC
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 35Ω
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
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LOC111STR LOC111STR IXYS LOC111.pdf Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; 1A
Kind of output: transistor
Mounting: SMD
Type of optocoupler: optocoupler
Number of channels: 1
Trigger current: 1A
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
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CLA5E1200PZ-TUB CLA5E1200PZ-TUB IXYS CLA5E1200PZ.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 7.8A; 5A; Igt: 30/50mA; TO263ABHV; SMD; tube
Case: TO263ABHV
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Max. forward impulse current: 60A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 30/50mA
Max. load current: 7.8A
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21+4.24 EUR
23+3.84 EUR
26+3.33 EUR
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CLF20E1200PB CLF20E1200PB IXYS CLF20E1200PB.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 55mA; TO220AB; THT; tube
Max. off-state voltage: 1.2kV
Load current: 20A
Case: TO220AB
Mounting: THT
Max. load current: 31A
Max. forward impulse current: 175A
Kind of package: tube
Gate current: 55mA
Type of thyristor: thyristor
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Lieferzeit 14-21 Tag (e)
16+5.33 EUR
22+4.01 EUR
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DHG10I1200PA DHG10I1200PA IXYS DHG10I1200PA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 10A; tube; Ifsm: 60A; TO220AC; 85W
Type of diode: rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 2.23V
Max. forward impulse current: 60A
Kind of package: tube
Reverse recovery time: 200ns
Heatsink thickness: 1.14...1.39mm
Power dissipation: 85W
Features of semiconductor devices: fast switching
Technology: Sonic FRD™
auf Bestellung 155 Stücke:
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28+3.12 EUR
33+2.65 EUR
35+2.46 EUR
38+2.25 EUR
50+2.11 EUR
100+2.01 EUR
Mindestbestellmenge: 28 Stücke
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DHG20I1200PA DHG20I1200PA IXYS DHG20I1200PA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 20A; tube; Ifsm: 150A; TO220AC; 140W
Type of diode: rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 2.25V
Max. forward impulse current: 150A
Kind of package: tube
Reverse recovery time: 200ns
Heatsink thickness: 1.14...1.39mm
Power dissipation: 140W
Features of semiconductor devices: fast switching
Technology: Sonic FRD™
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14+6.09 EUR
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DHG10I1200PM DHG10I1200PM IXYS DHG10I1200PM.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 10A; tube; Ifsm: 65A; TO220FP-2; 30W
Type of diode: rectifying
Case: TO220FP-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 2.13V
Max. forward impulse current: 65A
Kind of package: tube
Reverse recovery time: 75ns
Power dissipation: 30W
Features of semiconductor devices: fast switching
Technology: Sonic FRD™
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.81 EUR
27+3.25 EUR
29+2.94 EUR
33+2.58 EUR
50+2.37 EUR
Mindestbestellmenge: 23 Stücke
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CLA5E1200PZ-TRL CLA5E1200PZ-TRL IXYS media?resourcetype=datasheets&itemid=32eb8ba1-5fc9-40b1-9853-f8e52c0de878&filename=Littelfuse-Power-Semiconductors-CLA5E1200PZ-Datasheet Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 7.8A; 5A; Igt: 30mA; D2PAK; SMD; reel,tape
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Kind of package: reel; tape
Type of thyristor: thyristor
Gate current: 30mA
Max. load current: 7.8A
Produkt ist nicht verfügbar
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CLA30E1200PC-TUB CLA30E1200PC-TUB IXYS Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30mA; TO263; SMD; tube
Case: TO263
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 30mA
Max. load current: 47A
Produkt ist nicht verfügbar
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CLA20EF1200PB CLA20EF1200PB IXYS CLA20EF1200PB.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 35A; 20A; Igt: 35mA; TO220AB; THT; tube
Case: TO220AB
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Max. forward impulse current: 130A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 35mA
Max. load current: 35A
Features of semiconductor devices: reverse conducting thyristor (RCT)
Produkt ist nicht verfügbar
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CLA20EF1200PZ-TRL CLA20EF1200PZ-TRL IXYS Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCLA20EF1200PZ.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 35A; 20A; Igt: 20mA; D2PAK; SMD; reel,tape
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 20A
Kind of package: reel; tape
Type of thyristor: thyristor
Gate current: 20mA
Max. load current: 35A
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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CLA20EF1200PZ-TUB CLA20EF1200PZ-TUB IXYS Littelfuse-Power-Semiconductors-CLA20EF1200PZ-Datasheet?assetguid=b4d6e4f0-e5db-4d08-b024-c6def3ffd29e Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 35A; 20A; Igt: 20mA; D2PAK; SMD; tube
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 20A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 20mA
Max. load current: 35A
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1400 Stücke
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CLA30E1200PC-TRL CLA30E1200PC-TRL IXYS Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; D2PAK; SMD
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 255A
Kind of package: reel; tape
Type of thyristor: thyristor
Gate current: 30/50mA
Max. load current: 47A
Produkt ist nicht verfügbar
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CLB40I1200PZ-TRL CLB40I1200PZ-TRL IXYS Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 63A; 40A; Igt: 30mA; D2PAK; SMD; reel,tape
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 40A
Kind of package: reel; tape
Type of thyristor: thyristor
Gate current: 30mA
Max. load current: 63A
Produkt ist nicht verfügbar
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CLB40I1200PZ-TUB IXYS CLB40I1200PZ.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 63A; 40A; Igt: 30/50mA; TO263ABHV; SMD; tube
Case: TO263ABHV
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 40A
Max. forward impulse current: 0.44kA
Kind of package: tube
Type of thyristor: thyristor
Gate current: 30/50mA
Max. load current: 63A
Produkt ist nicht verfügbar
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CLE20E1200PC-TRL CLE20E1200PC-TRL IXYS Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 35A; 20A; Igt: 40mA; TO263; SMD; reel,tape
Case: TO263
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 20A
Kind of package: reel; tape
Type of thyristor: thyristor
Gate current: 40mA
Max. load current: 35A
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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CLE20E1200PC-TUB CLE20E1200PC-TUB IXYS Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 35A; 20A; Igt: 40mA; TO263; SMD; tube
Case: TO263
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 20A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 40mA
Max. load current: 35A
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1400 Stücke
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CLE30E1200PB CLE30E1200PB IXYS CLE30E1200PB.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 35A; 30A; Igt: 50mA; TO220AB; THT; tube
Case: TO220AB
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 380A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50mA
Max. load current: 35A
Produkt ist nicht verfügbar
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DHG20C1200PB DHG20C1200PB IXYS DHG20C1200PB.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 10Ax2; tube; Ifsm: 60A; TO220AB; 85W
Type of diode: rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 2.23V
Max. forward impulse current: 60A
Kind of package: tube
Reverse recovery time: 200ns
Heatsink thickness: 1.14...1.39mm
Power dissipation: 85W
Features of semiconductor devices: fast switching
Technology: Sonic FRD™
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DPU30I1200PA DPU30I1200PA IXYS Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 250A; TO220-2; 123ns
Type of diode: rectifying
Case: TO220-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 250A
Kind of package: tube
Reverse recovery time: 123ns
Technology: FRED
Produkt ist nicht verfügbar
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IXA20I1200PB IXA20I1200PB IXYS IXA20I1200PB.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 22A; 165W; TO220-3
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate charge: 47nC
Turn-on time: 110ns
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 22A
Power dissipation: 165W
Pulsed collector current: 45A
Collector-emitter voltage: 1.2kV
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Type of transistor: IGBT
Produkt ist nicht verfügbar
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MIXA80W1200PTEH IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: E3-Pack
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 84A
Technology: XPT™
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Produkt ist nicht verfügbar
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MIXG120W1200PTEH IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: E3-Pack
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 140A
Technology: X2PT
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Produkt ist nicht verfügbar
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DSEE30-12A DSEE30-12A IXYS DSEE30-12A.PDF Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-3; 165W
Mounting: THT
Technology: HiPerFRED™
Type of diode: rectifying
Case: TO247-3
Reverse recovery time: 30ns
Max. forward voltage: 2.5V
Load current: 30A
Power dissipation: 165W
Max. forward impulse current: 200A
Kind of package: tube
Max. off-state voltage: 1.2kV
Semiconductor structure: double series
Features of semiconductor devices: fast switching
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2+42.54 EUR
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IXTH02N450HV IXTH02N450HV.pdf
IXTH02N450HV
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 113W; TO247HV; 1.6us
Case: TO247HV
Mounting: THT
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
Drain current: 0.2A
On-state resistance: 625Ω
Power dissipation: 113W
Drain-source voltage: 4.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
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IXTX1R4N450HV IXTX1R4N450HV.pdf
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1.4A; Idm: 5A; 960W; 660ns
Case: TO247PLUS-HV
Mounting: THT
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 88nC
Reverse recovery time: 660ns
Drain current: 1.4A
Pulsed drain current: 5A
Gate-source voltage: ±20V
On-state resistance: 40Ω
Power dissipation: 960W
Drain-source voltage: 4.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
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IXKC23N60C5 IXKC23N60C5.pdf
IXKC23N60C5
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 147W; ISOPLUS220™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 147W
Case: ISOPLUS220™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Produkt ist nicht verfügbar
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IXBT12N300HV littelfuse-discrete-igbts-ixb-12n300hv-datasheet?assetguid=ab24dcf4-1e21-4218-9669-c9c01e669b5c
IXBT12N300HV
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 30A; 160W; TO268
Case: TO268
Mounting: SMD
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Gate charge: 62nC
Turn-on time: 64ns
Turn-off time: 180ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 98A
Power dissipation: 160W
Collector-emitter voltage: 3kV
Technology: BiMOSFET™
Produkt ist nicht verfügbar
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MCD56-16io8B MCD56-16io8B.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 60A; TO240AA; Ufmax: 1.24V; bulk
Mechanical mounting: screw
Gate current: 100/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.24V
Load current: 60A
Max. load current: 100A
Max. forward impulse current: 1.5kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Case: TO240AA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Produkt ist nicht verfügbar
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MCD56-16IO1B MCD56-16IO1B.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 60A; TO240AA; Ufmax: 1.24V; bulk
Mechanical mounting: screw
Gate current: 100/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.24V
Load current: 60A
Max. load current: 100A
Max. forward impulse current: 1.5kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Case: TO240AA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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MCC56-16io8B L075.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
MCC56-16io8B
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 60A; TO240AA; Ufmax: 1.57V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.57V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Max. forward impulse current: 1.6kA
Produkt ist nicht verfügbar
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CS20-16IO1 CS20-12IO1-DTE.pdf CS20-16io1.pdf
CS20-16IO1
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 31A; 20A; Igt: 50mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 31A
Load current: 20A
Gate current: 50mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 260A
auf Bestellung 151 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
9+9.89 EUR
12+7.27 EUR
13+6.7 EUR
20+6.22 EUR
30+5.99 EUR
120+5.55 EUR
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CS30-12IO1 CS30-12IO1-DTE.pdf
CS30-12IO1
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tube
Max. off-state voltage: 1.2kV
Load current: 30A
Case: TO247AD
Mounting: THT
Max. load current: 47A
Max. forward impulse current: 0.4kA
Kind of package: tube
Gate current: 55mA
Type of thyristor: thyristor
auf Bestellung 224 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
11+8.03 EUR
16+5.43 EUR
Mindestbestellmenge: 11 Stücke
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CS30-16IO1 description CS30-12IO1-DTE.pdf
CS30-16IO1
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tube
Case: TO247AD
Mounting: THT
Kind of package: tube
Gate current: 55mA
Max. off-state voltage: 1.6kV
Load current: 30A
Max. load current: 47A
Max. forward impulse current: 0.4kA
Type of thyristor: thyristor
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
9+10.02 EUR
14+6.49 EUR
30+6.37 EUR
Mindestbestellmenge: 9 Stücke
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CS30-14IO1 CS30-12IO1-DTE.pdf
CS30-14IO1
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.4kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tube
Case: TO247AD
Mounting: THT
Kind of package: tube
Gate current: 55mA
Max. off-state voltage: 1.4kV
Load current: 30A
Max. load current: 47A
Max. forward impulse current: 0.4kA
Type of thyristor: thyristor
auf Bestellung 231 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
11+8.16 EUR
12+7.09 EUR
30+5.02 EUR
120+4.91 EUR
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CS20-12IO1 CS20-12IO1-DTE.pdf
CS20-12IO1
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 50mA; TO247AD; THT; tube
Case: TO247AD
Mounting: THT
Kind of package: tube
Gate current: 50mA
Max. off-state voltage: 1.2kV
Load current: 20A
Max. load current: 31A
Max. forward impulse current: 260A
Type of thyristor: thyristor
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
10+8.78 EUR
11+8.15 EUR
12+7.71 EUR
13+6.97 EUR
30+5.81 EUR
Mindestbestellmenge: 10 Stücke
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IXTH130N20T IXTQ130N20T_IXTH130N20T.pdf
IXTH130N20T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 200V; 75A; Idm: 320A; 830W
Type of transistor: N-MOSFET
Technology: Trench™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 75A
Pulsed drain current: 320A
Power dissipation: 830W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
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DSA240X150NA DSA240X150NA.pdf
DSA240X150NA
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 150V; If: 120Ax2; SOT227B; screw
Electrical mounting: screw
Max. forward voltage: 0.85V
Load current: 120A x2
Max. off-state voltage: 150V
Max. forward impulse current: 1.6kA
Max. load current: 240A
Kind of package: tube
Semiconductor structure: double independent
Type of semiconductor module: diode
Case: SOT227B
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Produkt ist nicht verfügbar
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CPC3982TTR CPC3982?assetguid=E1F44516-E781-43A7-ABB7-563255C890B1
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 0.15A; 0.4W; SOT23
Power dissipation: 0.4W
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Drain current: 0.15A
Gate-source voltage: ±15V
On-state resistance: 380Ω
Drain-source voltage: 800V
Kind of channel: depletion
Type of transistor: N-MOSFET
Polarisation: unipolar
auf Bestellung 2200 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
139+0.61 EUR
Mindestbestellmenge: 139 Stücke
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PLA193 PLA193.pdf
PLA193
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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PLA193E PLA193.pdf
PLA193E
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
20+4.44 EUR
50+2.92 EUR
250+2.33 EUR
Mindestbestellmenge: 20 Stücke
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PLA193S PLA193.pdf
PLA193S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
11+8.4 EUR
13+6.85 EUR
50+6.26 EUR
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PLA193STR PLA193.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IXFH24N90P IXF_24N90P.pdf
IXFH24N90P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 24A; 660W; TO247-3
Type of transistor: N-MOSFET
Power dissipation: 660W
Case: TO247-3
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Drain current: 24A
Kind of channel: enhancement
Drain-source voltage: 900V
On-state resistance: 0.42Ω
Polarisation: unipolar
auf Bestellung 226 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
6+15.62 EUR
30+15.04 EUR
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IXFR24N90P IXFR24N90P.pdf
IXFR24N90P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 13A; 230W; ISOPLUS247™
Type of transistor: N-MOSFET
Power dissipation: 230W
Case: ISOPLUS247™
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Drain current: 13A
Kind of channel: enhancement
Drain-source voltage: 900V
On-state resistance: 0.46Ω
Polarisation: unipolar
Produkt ist nicht verfügbar
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DSI30-16A DSI30-16A.pdf
DSI30-16A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 30A; tube; Ifsm: 255A; TO220AC; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 30A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.25V
Max. forward impulse current: 255A
Power dissipation: 160W
Kind of package: tube
auf Bestellung 80 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
23+3.72 EUR
29+3 EUR
50+2.11 EUR
Mindestbestellmenge: 23 Stücke
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DSI30-16AS DSI30-16AS.pdf
DSI30-16AS
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.6kV
Load current: 30A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.25V
Max. forward impulse current: 255A
Power dissipation: 160W
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DSI30-16AS-TUB DSI30-16AS.pdf
DSI30-16AS-TUB
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.6kV
Load current: 30A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.25V
Max. forward impulse current: 255A
Power dissipation: 160W
Kind of package: tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 1400 Stücke
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DPG30C400PB media?resourcetype=datasheets&itemid=EFDD0730-3DB0-4D77-9198-01A406BAA107&filename=Littelfuse-Power-Semiconductors-DPG30C400PB-Datasheet
DPG30C400PB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15Ax2; tube; Ifsm: 190A; TO220AB; 90W
Mounting: THT
Case: TO220AB
Kind of package: tube
Technology: HiPerFRED™ 2nd Gen
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Type of diode: rectifying
Reverse recovery time: 45ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 1.39V
Max. forward impulse current: 190A
Load current: 15A x2
Power dissipation: 90W
Max. off-state voltage: 0.4kV
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
22+4.05 EUR
24+3.59 EUR
Mindestbestellmenge: 22 Stücke
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MD16110A-DKM2MM littelfuse_power_semiconductor_rectifier_module_circuit_package_a_datasheet.pdf?assetguid=7ed5c66f-3580-4b5e-91ee-69f455430ce8
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 110A; package A
Kind of package: bulk
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
Mechanical mounting: screw
Case: package A
Electrical mounting: screw
Max. forward voltage: 1.6V
Load current: 110A
Max. load current: 170A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 2.5kA
Produkt ist nicht verfügbar
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DSA60C45HB DSA60C45HB.pdf
DSA60C45HB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO247-3; Ufmax: 0.66V
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 0.55kA
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 160W
Load current: 30A x2
Max. forward voltage: 0.66V
auf Bestellung 296 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
17+5.15 EUR
19+4.64 EUR
21+4.11 EUR
30+3.76 EUR
Mindestbestellmenge: 17 Stücke
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DSA60C60PB DSA60C60PB.pdf
DSA60C60PB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.77V
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 0.45kA
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 175W
Heatsink thickness: 1.14...1.39mm
Load current: 30A x2
Max. forward voltage: 0.77V
Produkt ist nicht verfügbar
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DSA60C150PB DSA60C150PB.pdf
DSA60C150PB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 30Ax2; TO220AB; Ufmax: 0.8V
Type of diode: Schottky rectifying
Max. off-state voltage: 150V
Max. forward impulse current: 390A
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 175W
Heatsink thickness: 1.14...1.39mm
Load current: 30A x2
Max. forward voltage: 0.8V
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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DSA60C100PB DSA60C100PB.pdf
DSA60C100PB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO220AB; Ufmax: 0.78V
Type of diode: Schottky rectifying
Max. off-state voltage: 0.1kV
Max. forward impulse current: 0.44kA
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 175W
Heatsink thickness: 1.14...1.39mm
Load current: 30A x2
Max. forward voltage: 0.78V
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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DSA60C45PB DSA60C45PB.pdf
DSA60C45PB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220AB; Ufmax: 0.67V
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 490A
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 175W
Heatsink thickness: 1.14...1.39mm
Load current: 30A x2
Max. forward voltage: 0.67V
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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DSA60C60HB DSA60C60HB.pdf
DSA60C60HB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO247-3; Ufmax: 0.75V
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 0.55kA
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 160W
Load current: 30A x2
Max. forward voltage: 0.75V
Produkt ist nicht verfügbar
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DSA30C45PC DSA30C45PC.pdf
DSA30C45PC
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 15Ax2; reel,tape; 85W
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.63V
Max. forward impulse current: 340A
Kind of package: reel; tape
Power dissipation: 85W
auf Bestellung 687 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
114+0.75 EUR
Mindestbestellmenge: 114 Stücke
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IXGX82N120A3 IXGK(x)82N120A3.pdf
IXGX82N120A3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; PLUS247™
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 1.25kW
Gate charge: 340nC
Technology: GenX3™; PT
Pulsed collector current: 580A
Type of transistor: IGBT
Turn-on time: 109ns
Kind of package: tube
Case: PLUS247™
Turn-off time: 1.59µs
Gate-emitter voltage: ±20V
Collector current: 82A
Produkt ist nicht verfügbar
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IXGX82N120B3 IXGK(X)82N120B3.pdf
IXGX82N120B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; PLUS247™
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 1.25kW
Gate charge: 0.35µC
Technology: GenX3™; PT
Pulsed collector current: 500A
Type of transistor: IGBT
Turn-on time: 112ns
Kind of package: tube
Case: PLUS247™
Turn-off time: 760ns
Gate-emitter voltage: ±20V
Collector current: 82A
Produkt ist nicht verfügbar
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LOC111S LOC111.pdf
LOC111S
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; 1A
Kind of output: transistor
Mounting: SMD
Type of optocoupler: optocoupler
Number of channels: 1
Trigger current: 1A
Insulation voltage: 3.75kV
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
5+17.02 EUR
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LCB111STR LCB111.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Case: DIP6
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NC
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 35Ω
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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LOC111STR LOC111.pdf
LOC111STR
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; 1A
Kind of output: transistor
Mounting: SMD
Type of optocoupler: optocoupler
Number of channels: 1
Trigger current: 1A
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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CLA5E1200PZ-TUB CLA5E1200PZ.pdf
CLA5E1200PZ-TUB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 7.8A; 5A; Igt: 30/50mA; TO263ABHV; SMD; tube
Case: TO263ABHV
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Max. forward impulse current: 60A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 30/50mA
Max. load current: 7.8A
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
21+4.24 EUR
23+3.84 EUR
26+3.33 EUR
Mindestbestellmenge: 21 Stücke
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CLF20E1200PB CLF20E1200PB.pdf
CLF20E1200PB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 55mA; TO220AB; THT; tube
Max. off-state voltage: 1.2kV
Load current: 20A
Case: TO220AB
Mounting: THT
Max. load current: 31A
Max. forward impulse current: 175A
Kind of package: tube
Gate current: 55mA
Type of thyristor: thyristor
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
16+5.33 EUR
22+4.01 EUR
Mindestbestellmenge: 16 Stücke
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DHG10I1200PA DHG10I1200PA.pdf
DHG10I1200PA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 10A; tube; Ifsm: 60A; TO220AC; 85W
Type of diode: rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 2.23V
Max. forward impulse current: 60A
Kind of package: tube
Reverse recovery time: 200ns
Heatsink thickness: 1.14...1.39mm
Power dissipation: 85W
Features of semiconductor devices: fast switching
Technology: Sonic FRD™
auf Bestellung 155 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
28+3.12 EUR
33+2.65 EUR
35+2.46 EUR
38+2.25 EUR
50+2.11 EUR
100+2.01 EUR
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DHG20I1200PA DHG20I1200PA.pdf
DHG20I1200PA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 20A; tube; Ifsm: 150A; TO220AC; 140W
Type of diode: rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 2.25V
Max. forward impulse current: 150A
Kind of package: tube
Reverse recovery time: 200ns
Heatsink thickness: 1.14...1.39mm
Power dissipation: 140W
Features of semiconductor devices: fast switching
Technology: Sonic FRD™
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Lieferzeit 14-21 Tag (e)
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14+6.09 EUR
15+5.66 EUR
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DHG10I1200PM DHG10I1200PM.pdf
DHG10I1200PM
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 10A; tube; Ifsm: 65A; TO220FP-2; 30W
Type of diode: rectifying
Case: TO220FP-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 2.13V
Max. forward impulse current: 65A
Kind of package: tube
Reverse recovery time: 75ns
Power dissipation: 30W
Features of semiconductor devices: fast switching
Technology: Sonic FRD™
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)
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23+3.81 EUR
27+3.25 EUR
29+2.94 EUR
33+2.58 EUR
50+2.37 EUR
Mindestbestellmenge: 23 Stücke
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CLA5E1200PZ-TRL media?resourcetype=datasheets&itemid=32eb8ba1-5fc9-40b1-9853-f8e52c0de878&filename=Littelfuse-Power-Semiconductors-CLA5E1200PZ-Datasheet
CLA5E1200PZ-TRL
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 7.8A; 5A; Igt: 30mA; D2PAK; SMD; reel,tape
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Kind of package: reel; tape
Type of thyristor: thyristor
Gate current: 30mA
Max. load current: 7.8A
Produkt ist nicht verfügbar
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CLA30E1200PC-TUB
CLA30E1200PC-TUB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30mA; TO263; SMD; tube
Case: TO263
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 30mA
Max. load current: 47A
Produkt ist nicht verfügbar
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CLA20EF1200PB CLA20EF1200PB.pdf
CLA20EF1200PB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 35A; 20A; Igt: 35mA; TO220AB; THT; tube
Case: TO220AB
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Max. forward impulse current: 130A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 35mA
Max. load current: 35A
Features of semiconductor devices: reverse conducting thyristor (RCT)
Produkt ist nicht verfügbar
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CLA20EF1200PZ-TRL Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCLA20EF1200PZ.pdf
CLA20EF1200PZ-TRL
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 35A; 20A; Igt: 20mA; D2PAK; SMD; reel,tape
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 20A
Kind of package: reel; tape
Type of thyristor: thyristor
Gate current: 20mA
Max. load current: 35A
Produkt ist nicht verfügbar
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CLA20EF1200PZ-TUB Littelfuse-Power-Semiconductors-CLA20EF1200PZ-Datasheet?assetguid=b4d6e4f0-e5db-4d08-b024-c6def3ffd29e
CLA20EF1200PZ-TUB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 35A; 20A; Igt: 20mA; D2PAK; SMD; tube
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 20A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 20mA
Max. load current: 35A
Produkt ist nicht verfügbar
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CLA30E1200PC-TRL
CLA30E1200PC-TRL
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; D2PAK; SMD
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 255A
Kind of package: reel; tape
Type of thyristor: thyristor
Gate current: 30/50mA
Max. load current: 47A
Produkt ist nicht verfügbar
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CLB40I1200PZ-TRL
CLB40I1200PZ-TRL
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 63A; 40A; Igt: 30mA; D2PAK; SMD; reel,tape
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 40A
Kind of package: reel; tape
Type of thyristor: thyristor
Gate current: 30mA
Max. load current: 63A
Produkt ist nicht verfügbar
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CLB40I1200PZ-TUB CLB40I1200PZ.pdf
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 63A; 40A; Igt: 30/50mA; TO263ABHV; SMD; tube
Case: TO263ABHV
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 40A
Max. forward impulse current: 0.44kA
Kind of package: tube
Type of thyristor: thyristor
Gate current: 30/50mA
Max. load current: 63A
Produkt ist nicht verfügbar
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CLE20E1200PC-TRL
CLE20E1200PC-TRL
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 35A; 20A; Igt: 40mA; TO263; SMD; reel,tape
Case: TO263
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 20A
Kind of package: reel; tape
Type of thyristor: thyristor
Gate current: 40mA
Max. load current: 35A
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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CLE20E1200PC-TUB
CLE20E1200PC-TUB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 35A; 20A; Igt: 40mA; TO263; SMD; tube
Case: TO263
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 20A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 40mA
Max. load current: 35A
Produkt ist nicht verfügbar
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CLE30E1200PB CLE30E1200PB.pdf
CLE30E1200PB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 35A; 30A; Igt: 50mA; TO220AB; THT; tube
Case: TO220AB
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 380A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50mA
Max. load current: 35A
Produkt ist nicht verfügbar
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DHG20C1200PB DHG20C1200PB.pdf
DHG20C1200PB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 10Ax2; tube; Ifsm: 60A; TO220AB; 85W
Type of diode: rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 2.23V
Max. forward impulse current: 60A
Kind of package: tube
Reverse recovery time: 200ns
Heatsink thickness: 1.14...1.39mm
Power dissipation: 85W
Features of semiconductor devices: fast switching
Technology: Sonic FRD™
Produkt ist nicht verfügbar
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DPU30I1200PA
DPU30I1200PA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 250A; TO220-2; 123ns
Type of diode: rectifying
Case: TO220-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 250A
Kind of package: tube
Reverse recovery time: 123ns
Technology: FRED
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IXA20I1200PB IXA20I1200PB.pdf
IXA20I1200PB
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 22A; 165W; TO220-3
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate charge: 47nC
Turn-on time: 110ns
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 22A
Power dissipation: 165W
Pulsed collector current: 45A
Collector-emitter voltage: 1.2kV
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Type of transistor: IGBT
Produkt ist nicht verfügbar
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MIXA80W1200PTEH
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: E3-Pack
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 84A
Technology: XPT™
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Produkt ist nicht verfügbar
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MIXG120W1200PTEH
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: E3-Pack
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 140A
Technology: X2PT
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Produkt ist nicht verfügbar
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DSEE30-12A DSEE30-12A.PDF
DSEE30-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-3; 165W
Mounting: THT
Technology: HiPerFRED™
Type of diode: rectifying
Case: TO247-3
Reverse recovery time: 30ns
Max. forward voltage: 2.5V
Load current: 30A
Power dissipation: 165W
Max. forward impulse current: 200A
Kind of package: tube
Max. off-state voltage: 1.2kV
Semiconductor structure: double series
Features of semiconductor devices: fast switching
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
2+42.54 EUR
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