| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IXTA34N65X2-TRL | IXYS |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; X2-Class; 650V; 34A; 540W; D2PAK,TO263; 390ns Type of transistor: N-MOSFET Technology: X2-Class Drain-source voltage: 650V Drain current: 34A Power dissipation: 540W Case: D2PAK; TO263 Gate-source voltage: 30V On-state resistance: 96mΩ Mounting: SMD Kind of channel: enhancement Reverse recovery time: 390ns Gate charge: 54nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXTT34N65X2HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO268HV; 390ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Power dissipation: 540W Case: TO268HV On-state resistance: 96mΩ Mounting: SMD Kind of package: tube Kind of channel: enhancement Reverse recovery time: 390ns Gate charge: 54nC Features of semiconductor devices: ultra junction x-class |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXXK110N65B4H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; TO264 Type of transistor: IGBT Power dissipation: 880W Case: TO264 Mounting: THT Gate charge: 183nC Turn-on time: 65ns Kind of package: tube Turn-off time: 250ns Gate-emitter voltage: ±20V Collector current: 110A Collector-emitter voltage: 650V Technology: GenX4™; Trench; XPT™ Pulsed collector current: 570A |
auf Bestellung 94 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXYP10N65C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 10A; 160W; TO220-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 160W Case: TO220-3 Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 10A Collector-emitter voltage: 650V Gate charge: 18nC Pulsed collector current: 54A Turn-on time: 44ns Turn-off time: 128ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXXN110N65B4H1 | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B Power dissipation: 750W Case: SOT227B Semiconductor structure: single transistor Gate-emitter voltage: ±20V Collector current: 110A Type of semiconductor module: IGBT Technology: GenX4™; XPT™ Mechanical mounting: screw Pulsed collector current: 650A Max. off-state voltage: 650V Electrical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXXN110N65C4H1 | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B Technology: GenX3™; XPT™ Power dissipation: 750W Case: SOT227B Gate-emitter voltage: ±20V Collector current: 110A Type of semiconductor module: IGBT Mechanical mounting: screw Pulsed collector current: 470A Max. off-state voltage: 650V Electrical mounting: screw Semiconductor structure: single transistor |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXXR110N65B4H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 70A; 455W; PLUS247™ Type of transistor: IGBT Power dissipation: 455W Case: PLUS247™ Mounting: THT Gate charge: 183nC Turn-on time: 65ns Kind of package: tube Turn-off time: 250ns Gate-emitter voltage: ±20V Collector current: 70A Collector-emitter voltage: 650V Technology: GenX4™; Trench; XPT™ Pulsed collector current: 490A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXSA110N65L2-7TR | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; N; 650V; 25A; 600W; D2PAK-7 Type of transistor: N-MOSFET Polarisation: N Drain-source voltage: 650V Drain current: 25A Power dissipation: 600W Case: D2PAK-7 Gate-source voltage: -5...20V On-state resistance: 111Ω Mounting: SMD Gate charge: 125nC Kind of channel: enhancement Technology: SiC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IXXH110N65B4 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 250A; 880W; TO247-3 Type of transistor: IGBT Power dissipation: 880W Case: TO247-3 Mounting: THT Gate charge: 183nC Kind of package: tube Gate-emitter voltage: ±20V Collector current: 250A Collector-emitter voltage: 650V Pulsed collector current: 570A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IXXX110N65B4H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; PLUS247™ Type of transistor: IGBT Power dissipation: 880W Case: PLUS247™ Mounting: THT Gate charge: 183nC Turn-on time: 65ns Kind of package: tube Turn-off time: 250ns Gate-emitter voltage: ±20V Collector current: 110A Collector-emitter voltage: 650V Technology: GenX4™; Trench; XPT™ Pulsed collector current: 570A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTP6N100D2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO220AB; 41ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 6A Power dissipation: 300W Case: TO220AB On-state resistance: 2.2Ω Mounting: THT Kind of package: tube Kind of channel: depletion Reverse recovery time: 41ns |
auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTH6N100D2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO247-3; 41ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 6A Power dissipation: 300W Case: TO247-3 On-state resistance: 2.2Ω Mounting: THT Kind of package: tube Kind of channel: depletion Reverse recovery time: 41ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXTA6N100D2HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; N; 1kV; 6A; 300W; D2PAK,TO263AB; 952ns Type of transistor: N-MOSFET Polarisation: N Drain-source voltage: 1kV Drain current: 6A Power dissipation: 300W Case: D2PAK; TO263AB Gate-source voltage: 20V On-state resistance: 2.2Ω Mounting: SMD Gate charge: 95nC Reverse recovery time: 952ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXTA6N100D2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO263; 41ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 6A Power dissipation: 300W Case: TO263 On-state resistance: 2.2Ω Mounting: SMD Kind of package: tube Kind of channel: depletion Reverse recovery time: 41ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTA6N100D2-TRL | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; N; 1kV; 800mA; 300W; D2PAK,TO263; 952ns Type of transistor: N-MOSFET Polarisation: N Drain-source voltage: 1kV Drain current: 0.8A Power dissipation: 300W Case: D2PAK; TO263 Gate-source voltage: 20V On-state resistance: 2.2Ω Mounting: SMD Gate charge: 95nC Reverse recovery time: 952ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXFH6N100F | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; 1kV; 6A; 180W; TO247-3; 250ns Type of transistor: N-MOSFET Technology: HiPerFET™ Drain-source voltage: 1kV Drain current: 6A Power dissipation: 180W Case: TO247-3 Gate-source voltage: 20V On-state resistance: 1.9Ω Mounting: THT Gate charge: 54nC Kind of channel: enhancement Reverse recovery time: 250ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IXFH26N100X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; N; 1kV; 26A; 860W; TO247-3; 220ns Type of transistor: N-MOSFET Technology: HiPerFET™ Polarisation: N Drain-source voltage: 1kV Drain current: 26A Power dissipation: 860W Case: TO247-3 Gate-source voltage: 30V On-state resistance: 0.32Ω Mounting: THT Gate charge: 113nC Kind of channel: enhancement Reverse recovery time: 220ns Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IXFK26N100P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 26A; 780W; TO264; 300ns Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 26A Power dissipation: 780W Case: TO264 Gate-source voltage: ±30V On-state resistance: 390mΩ Mounting: THT Gate charge: 197nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 300ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFN36N100 | IXYS |
 Category: Transistor modulesDescription: Module; single transistor; 1kV; 36A; SOT227B; screw; Idm: 144A; 694W Technology: HiPerFET™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 36A Power dissipation: 694W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 0.24Ω Gate charge: 380nC Kind of channel: enhancement Reverse recovery time: 180ns Semiconductor structure: single transistor Pulsed drain current: 144A Type of semiconductor module: MOSFET transistor Mechanical mounting: screw Electrical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXFT26N100XHV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 1kV; 26A; 860W; D3PAK,TO268; 220ns Type of transistor: N-MOSFET Technology: HiPerFET™ Drain-source voltage: 1kV Drain current: 26A Power dissipation: 860W Case: D3PAK; TO268 Gate-source voltage: 30V On-state resistance: 0.32Ω Mounting: SMD Gate charge: 113nC Kind of channel: enhancement Reverse recovery time: 220ns Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IXFX26N100P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 26A; 780W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 26A Power dissipation: 780W Case: PLUS247™ On-state resistance: 390mΩ Mounting: THT Gate charge: 197nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTA1R6N100D2-TRL | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 1kV; 1.6A; 100W; D2PAK,TO263; 970ns Type of transistor: N-MOSFET Drain-source voltage: 1kV Drain current: 1.6A Power dissipation: 100W Case: D2PAK; TO263 Gate-source voltage: 20V On-state resistance: 10Ω Mounting: SMD Gate charge: 27nC Reverse recovery time: 970ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXTY1R6N100D2-TRL | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 1kV; 1.6A; Idm: 1.6A; 100W; DPAK; 970ns Type of transistor: N-MOSFET Drain-source voltage: 1kV Drain current: 1.6A Power dissipation: 100W Case: DPAK Gate-source voltage: 20V On-state resistance: 10Ω Mounting: SMD Gate charge: 27nC Kind of channel: enhancement Reverse recovery time: 970ns Pulsed drain current: 1.6A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXFP7N100P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO220AB Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 7A Power dissipation: 300W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1.9Ω Mounting: THT Gate charge: 47nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 300ns |
auf Bestellung 299 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFA7N100P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO263; 300ns Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 7A Power dissipation: 300W Case: TO263 Gate-source voltage: ±30V On-state resistance: 1.9Ω Mounting: SMD Gate charge: 47nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 300ns |
auf Bestellung 132 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFH7N100P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 7A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 1.9Ω Mounting: THT Gate charge: 47nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 300ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFA7N100P-TRL | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 1kV; 7A; 300W; D2PAK,TO263; 300ns Type of transistor: N-MOSFET Technology: HiPerFET™ Drain-source voltage: 1kV Drain current: 7A Power dissipation: 300W Case: D2PAK; TO263 Gate-source voltage: 30V On-state resistance: 1.9Ω Mounting: SMD Gate charge: 47nC Kind of channel: enhancement Reverse recovery time: 300ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXGH72N60A3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3 Type of transistor: IGBT Technology: GenX3™; XPT™ Collector-emitter voltage: 600V Collector current: 72A Power dissipation: 540W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 400A Mounting: THT Gate charge: 230nC Kind of package: tube Turn-on time: 61ns Turn-off time: 885ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXGH48N60A3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 48A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 110nC Kind of package: tube Turn-on time: 54ns Turn-off time: 925ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXGP48N60A3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO220-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 48A Power dissipation: 300W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 110nC Kind of package: tube Turn-on time: 54ns Turn-off time: 925ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXGP36N60A3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 36A; 220W; TO220-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 36A Power dissipation: 220W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 80nC Kind of package: tube Turn-on time: 43ns Turn-off time: 1µs |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXGA36N60A3-TRL | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 36A; 220W; TO263 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 36A Power dissipation: 220W Case: TO263 Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXGT72N60A3-TRL | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 75A; 540W; TO268 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 75A Power dissipation: 540W Case: TO268 Gate-emitter voltage: ±20V Pulsed collector current: 400A Mounting: SMD Gate charge: 230nC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 400 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IXGX72N60A3H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; PLUS247™ Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 72A Power dissipation: 540W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 400A Mounting: THT Gate charge: 230nC Kind of package: tube Turn-on time: 63ns Turn-off time: 885ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXYA20N65C3D1 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO263 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 200W Case: TO263 Gate-emitter voltage: ±20V Mounting: SMD Kind of package: tube Pulsed collector current: 105A Turn-on time: 51ns Turn-off time: 132ns Gate charge: 30nC |
auf Bestellung 125 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTH20N65X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO247-3; 350ns Type of transistor: N-MOSFET Power dissipation: 320W Case: TO247-3 Mounting: THT Kind of package: tube Features of semiconductor devices: ultra junction x-class Drain current: 20A Kind of channel: enhancement Drain-source voltage: 650V On-state resistance: 0.21Ω Reverse recovery time: 0.35µs Gate charge: 35nC Polarisation: unipolar |
auf Bestellung 244 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTA20N65X2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 22A; 290W; D2PAK Type of transistor: N-MOSFET Power dissipation: 290W Case: D2PAK Mounting: SMD Kind of package: tube Drain current: 20A Kind of channel: enhancement Drain-source voltage: 650V Gate-source voltage: ±30V On-state resistance: 0.185Ω Pulsed drain current: 22A Gate charge: 27nC Polarisation: unipolar |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXYP20N65C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 200W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 200W Case: TO220AB Mounting: THT Kind of package: tube Pulsed collector current: 105A Gate charge: 30nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXYA20N65C3 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO263 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 230W Case: TO263 Gate-emitter voltage: ±20V Mounting: SMD Kind of package: tube Pulsed collector current: 105A Turn-on time: 51ns Turn-off time: 132ns Gate charge: 30nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTH20N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 290W; TO247-3; 350ns Type of transistor: N-MOSFET Power dissipation: 290W Case: TO247-3 Mounting: THT Kind of package: tube Features of semiconductor devices: ultra junction x-class Drain current: 20A Kind of channel: enhancement Drain-source voltage: 650V On-state resistance: 0.185Ω Reverse recovery time: 0.35µs Gate charge: 27nC Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTP20N65X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO220AB; 350ns Type of transistor: N-MOSFET Power dissipation: 320W Case: TO220AB Mounting: THT Kind of package: tube Features of semiconductor devices: ultra junction x-class Drain current: 20A Kind of channel: enhancement Drain-source voltage: 650V On-state resistance: 0.21Ω Reverse recovery time: 0.35µs Gate charge: 35nC Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTA20N65X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO220AB; 350ns Type of transistor: N-MOSFET Power dissipation: 320W Case: TO220AB Mounting: THT Kind of package: tube Features of semiconductor devices: ultra junction x-class Drain current: 20A Kind of channel: enhancement Drain-source voltage: 650V On-state resistance: 0.21Ω Reverse recovery time: 0.35µs Gate charge: 35nC Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTP20N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 290W; TO220AB; 350ns Type of transistor: N-MOSFET Power dissipation: 290W Case: TO220AB Mounting: THT Kind of package: tube Features of semiconductor devices: ultra junction x-class Drain current: 20A Kind of channel: enhancement Drain-source voltage: 650V On-state resistance: 0.185Ω Reverse recovery time: 0.35µs Gate charge: 27nC Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXYA20N65C3-TRL | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 50A; 230W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 230W Case: D2PAK Gate-emitter voltage: ±20V Mounting: SMD Kind of package: reel; tape Pulsed collector current: 105A Gate charge: 30nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXFN160N30T | IXYS |
Category: Transistor modules Description: Module; single transistor; 300V; 130A; SOT227B; screw; Idm: 444A Technology: GigaMOS™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 130A Pulsed drain current: 444A Power dissipation: 900W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 19mΩ Gate charge: 376nC Kind of channel: enhancement Reverse recovery time: 200ns Semiconductor structure: single transistor Type of semiconductor module: MOSFET transistor Mechanical mounting: screw Electrical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFX160N30T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 160A; 1390W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 160A Power dissipation: 1390W Case: PLUS247™ On-state resistance: 19mΩ Mounting: THT Gate charge: 376nC Kind of channel: enhancement Kind of package: tube Features of semiconductor devices: thrench gate power mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFK160N30T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 300V; 160A; 1390W; TO264 Type of transistor: N-MOSFET Technology: GigaMOS™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 160A Power dissipation: 1390W Case: TO264 Gate-source voltage: ±20V On-state resistance: 19mΩ Mounting: THT Gate charge: 376nC Kind of channel: enhancement Reverse recovery time: 200ns Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFB300N10P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 300A; 1500W; PLUS264™ Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 300A Power dissipation: 1.5kW Case: PLUS264™ Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: THT Gate charge: 279nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 200ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXFT140N10P-TRL | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 100V; 140A; 600W; D3PAK,TO268; 200ns Type of transistor: N-MOSFET Drain-source voltage: 100V Drain current: 140A Power dissipation: 600W Case: D3PAK; TO268 Gate-source voltage: 20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 155nC Kind of channel: enhancement Reverse recovery time: 200ns Technology: HiPerFET™ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 400 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IXTT140N10P-TRL | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 100V; 140A; 600W; D3PAK,TO268; 120ns Type of transistor: N-MOSFET Drain-source voltage: 100V Drain current: 140A Power dissipation: 600W Case: D3PAK; TO268 Gate-source voltage: 20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 155nC Kind of channel: enhancement Reverse recovery time: 120ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 400 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IXFP10N60P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 120ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10A Power dissipation: 200W Case: TO220AB On-state resistance: 0.74Ω Mounting: THT Gate charge: 32nC Kind of channel: enhancement Kind of package: tube Reverse recovery time: 120ns |
auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTP10N60P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10A Power dissipation: 200W Case: TO220AB On-state resistance: 0.74Ω Mounting: THT Gate charge: 32nC Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Kind of package: tube Reverse recovery time: 0.5µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFA10N60P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 10A; 200W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10A Power dissipation: 200W Case: TO263 On-state resistance: 0.74Ω Mounting: SMD Gate charge: 32nC Kind of channel: enhancement Technology: HiPerFET™; Polar™ Kind of package: tube Reverse recovery time: 120ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFA10N60P-TRL | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 600V; 10A; 200W; D2PAK; 200ns Type of transistor: N-MOSFET Drain-source voltage: 600V Drain current: 10A Power dissipation: 200W Case: D2PAK Gate-source voltage: 30V On-state resistance: 0.74Ω Mounting: SMD Gate charge: 32nC Kind of channel: enhancement Technology: HiPerFET™ Reverse recovery time: 200ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXTA10N60P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 600V; 10A; 200W; D2PAK,TO263AB; 500ns Type of transistor: N-MOSFET Drain-source voltage: 600V Drain current: 10A Power dissipation: 200W Case: D2PAK; TO263AB Gate-source voltage: 30V On-state resistance: 0.74Ω Mounting: SMD Gate charge: 32nC Kind of channel: enhancement Reverse recovery time: 0.5µs |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXFN110N60P3 | IXYS |
Category: Transistor modules Description: Module; single transistor; 600V; 90A; SOT227B; screw; Idm: 275A Polarisation: unipolar Drain-source voltage: 600V Drain current: 90A Power dissipation: 1.5kW Case: SOT227B Gate-source voltage: ±40V On-state resistance: 56mΩ Gate charge: 254nC Kind of channel: enhancement Technology: HiPerFET™; Polar3™ Mechanical mounting: screw Electrical mounting: screw Semiconductor structure: single transistor Reverse recovery time: 250ns Pulsed drain current: 275A Type of semiconductor module: MOSFET transistor |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXFB110N60P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 110A; 1890W; 250ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 110A Power dissipation: 1890W Case: PLUS264™ Gate-source voltage: ±30V On-state resistance: 56mΩ Mounting: THT Gate charge: 254nC Kind of channel: enhancement Technology: HiPerFET™; Polar3™ Kind of package: tube Reverse recovery time: 250ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTT75N10L2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Linear L2™; unipolar; 100V; 75A; 400W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 75A Power dissipation: 400W Case: TO268 On-state resistance: 21mΩ Mounting: SMD Gate charge: 215nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 180ns Technology: Linear L2™ Gate-source voltage: ±20V |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTB62N50L | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 62A; 800W; PLUS264™; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 62A Power dissipation: 800W Case: PLUS264™ On-state resistance: 0.1Ω Mounting: THT Gate charge: 550nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Reverse recovery time: 0.5µs |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTK200N10L2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Linear L2™; unipolar; 100V; 200A; 1040W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 200A Power dissipation: 1.04kW Case: TO264 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: THT Gate charge: 540nC Kind of package: tube Kind of channel: enhancement Technology: Linear L2™ Reverse recovery time: 245ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXTA34N65X2-TRL |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; 650V; 34A; 540W; D2PAK,TO263; 390ns
Type of transistor: N-MOSFET
Technology: X2-Class
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: D2PAK; TO263
Gate-source voltage: 30V
On-state resistance: 96mΩ
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 390ns
Gate charge: 54nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; 650V; 34A; 540W; D2PAK,TO263; 390ns
Type of transistor: N-MOSFET
Technology: X2-Class
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: D2PAK; TO263
Gate-source voltage: 30V
On-state resistance: 96mΩ
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 390ns
Gate charge: 54nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| IXTT34N65X2HV |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO268HV; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO268HV
On-state resistance: 96mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Gate charge: 54nC
Features of semiconductor devices: ultra junction x-class
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO268HV; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO268HV
On-state resistance: 96mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Gate charge: 54nC
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXXK110N65B4H1 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; TO264
Type of transistor: IGBT
Power dissipation: 880W
Case: TO264
Mounting: THT
Gate charge: 183nC
Turn-on time: 65ns
Kind of package: tube
Turn-off time: 250ns
Gate-emitter voltage: ±20V
Collector current: 110A
Collector-emitter voltage: 650V
Technology: GenX4™; Trench; XPT™
Pulsed collector current: 570A
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; TO264
Type of transistor: IGBT
Power dissipation: 880W
Case: TO264
Mounting: THT
Gate charge: 183nC
Turn-on time: 65ns
Kind of package: tube
Turn-off time: 250ns
Gate-emitter voltage: ±20V
Collector current: 110A
Collector-emitter voltage: 650V
Technology: GenX4™; Trench; XPT™
Pulsed collector current: 570A
auf Bestellung 94 Stücke:
Lieferzeit 14-21 Tag (e)
| IXYP10N65C3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 10A; 160W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 10A
Collector-emitter voltage: 650V
Gate charge: 18nC
Pulsed collector current: 54A
Turn-on time: 44ns
Turn-off time: 128ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 10A; 160W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 10A
Collector-emitter voltage: 650V
Gate charge: 18nC
Pulsed collector current: 54A
Turn-on time: 44ns
Turn-off time: 128ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXXN110N65B4H1 |
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Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Power dissipation: 750W
Case: SOT227B
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 110A
Type of semiconductor module: IGBT
Technology: GenX4™; XPT™
Mechanical mounting: screw
Pulsed collector current: 650A
Max. off-state voltage: 650V
Electrical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Power dissipation: 750W
Case: SOT227B
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 110A
Type of semiconductor module: IGBT
Technology: GenX4™; XPT™
Mechanical mounting: screw
Pulsed collector current: 650A
Max. off-state voltage: 650V
Electrical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IXXN110N65C4H1 |
|
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX3™; XPT™
Power dissipation: 750W
Case: SOT227B
Gate-emitter voltage: ±20V
Collector current: 110A
Type of semiconductor module: IGBT
Mechanical mounting: screw
Pulsed collector current: 470A
Max. off-state voltage: 650V
Electrical mounting: screw
Semiconductor structure: single transistor
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX3™; XPT™
Power dissipation: 750W
Case: SOT227B
Gate-emitter voltage: ±20V
Collector current: 110A
Type of semiconductor module: IGBT
Mechanical mounting: screw
Pulsed collector current: 470A
Max. off-state voltage: 650V
Electrical mounting: screw
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXXR110N65B4H1 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 70A; 455W; PLUS247™
Type of transistor: IGBT
Power dissipation: 455W
Case: PLUS247™
Mounting: THT
Gate charge: 183nC
Turn-on time: 65ns
Kind of package: tube
Turn-off time: 250ns
Gate-emitter voltage: ±20V
Collector current: 70A
Collector-emitter voltage: 650V
Technology: GenX4™; Trench; XPT™
Pulsed collector current: 490A
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 70A; 455W; PLUS247™
Type of transistor: IGBT
Power dissipation: 455W
Case: PLUS247™
Mounting: THT
Gate charge: 183nC
Turn-on time: 65ns
Kind of package: tube
Turn-off time: 250ns
Gate-emitter voltage: ±20V
Collector current: 70A
Collector-emitter voltage: 650V
Technology: GenX4™; Trench; XPT™
Pulsed collector current: 490A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXSA110N65L2-7TR |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 25A; 600W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 25A
Power dissipation: 600W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 111Ω
Mounting: SMD
Gate charge: 125nC
Kind of channel: enhancement
Technology: SiC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 25A; 600W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 25A
Power dissipation: 600W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 111Ω
Mounting: SMD
Gate charge: 125nC
Kind of channel: enhancement
Technology: SiC
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| IXXH110N65B4 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 250A; 880W; TO247-3
Type of transistor: IGBT
Power dissipation: 880W
Case: TO247-3
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 250A
Collector-emitter voltage: 650V
Pulsed collector current: 570A
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 250A; 880W; TO247-3
Type of transistor: IGBT
Power dissipation: 880W
Case: TO247-3
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 250A
Collector-emitter voltage: 650V
Pulsed collector current: 570A
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXXX110N65B4H1 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; PLUS247™
Type of transistor: IGBT
Power dissipation: 880W
Case: PLUS247™
Mounting: THT
Gate charge: 183nC
Turn-on time: 65ns
Kind of package: tube
Turn-off time: 250ns
Gate-emitter voltage: ±20V
Collector current: 110A
Collector-emitter voltage: 650V
Technology: GenX4™; Trench; XPT™
Pulsed collector current: 570A
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; PLUS247™
Type of transistor: IGBT
Power dissipation: 880W
Case: PLUS247™
Mounting: THT
Gate charge: 183nC
Turn-on time: 65ns
Kind of package: tube
Turn-off time: 250ns
Gate-emitter voltage: ±20V
Collector current: 110A
Collector-emitter voltage: 650V
Technology: GenX4™; Trench; XPT™
Pulsed collector current: 570A
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IXTP6N100D2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO220AB; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 41ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO220AB; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 41ns
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTH6N100D2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO247-3; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 41ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO247-3; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 41ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXTA6N100D2HV |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 1kV; 6A; 300W; D2PAK,TO263AB; 952ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: D2PAK; TO263AB
Gate-source voltage: 20V
On-state resistance: 2.2Ω
Mounting: SMD
Gate charge: 95nC
Reverse recovery time: 952ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 1kV; 6A; 300W; D2PAK,TO263AB; 952ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: D2PAK; TO263AB
Gate-source voltage: 20V
On-state resistance: 2.2Ω
Mounting: SMD
Gate charge: 95nC
Reverse recovery time: 952ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXTA6N100D2 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO263; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO263
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 41ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO263; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO263
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 41ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTA6N100D2-TRL |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 1kV; 800mA; 300W; D2PAK,TO263; 952ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 300W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 2.2Ω
Mounting: SMD
Gate charge: 95nC
Reverse recovery time: 952ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 1kV; 800mA; 300W; D2PAK,TO263; 952ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 300W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 2.2Ω
Mounting: SMD
Gate charge: 95nC
Reverse recovery time: 952ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| IXFH6N100F |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 1kV; 6A; 180W; TO247-3; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 180W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 1.9Ω
Mounting: THT
Gate charge: 54nC
Kind of channel: enhancement
Reverse recovery time: 250ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 1kV; 6A; 180W; TO247-3; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 180W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 1.9Ω
Mounting: THT
Gate charge: 54nC
Kind of channel: enhancement
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXFH26N100X |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 1kV; 26A; 860W; TO247-3; 220ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: N
Drain-source voltage: 1kV
Drain current: 26A
Power dissipation: 860W
Case: TO247-3
Gate-source voltage: 30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 113nC
Kind of channel: enhancement
Reverse recovery time: 220ns
Application: automotive industry
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 1kV; 26A; 860W; TO247-3; 220ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: N
Drain-source voltage: 1kV
Drain current: 26A
Power dissipation: 860W
Case: TO247-3
Gate-source voltage: 30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 113nC
Kind of channel: enhancement
Reverse recovery time: 220ns
Application: automotive industry
Produkt ist nicht verfügbar
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| IXFK26N100P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 26A; 780W; TO264; 300ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 26A
Power dissipation: 780W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 26A; 780W; TO264; 300ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 26A
Power dissipation: 780W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
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| IXFN36N100 |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 1kV; 36A; SOT227B; screw; Idm: 144A; 694W
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 36A
Power dissipation: 694W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Gate charge: 380nC
Kind of channel: enhancement
Reverse recovery time: 180ns
Semiconductor structure: single transistor
Pulsed drain current: 144A
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Category: Transistor modules
Description: Module; single transistor; 1kV; 36A; SOT227B; screw; Idm: 144A; 694W
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 36A
Power dissipation: 694W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Gate charge: 380nC
Kind of channel: enhancement
Reverse recovery time: 180ns
Semiconductor structure: single transistor
Pulsed drain current: 144A
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Produkt ist nicht verfügbar
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| IXFT26N100XHV |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 26A; 860W; D3PAK,TO268; 220ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 1kV
Drain current: 26A
Power dissipation: 860W
Case: D3PAK; TO268
Gate-source voltage: 30V
On-state resistance: 0.32Ω
Mounting: SMD
Gate charge: 113nC
Kind of channel: enhancement
Reverse recovery time: 220ns
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 26A; 860W; D3PAK,TO268; 220ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 1kV
Drain current: 26A
Power dissipation: 860W
Case: D3PAK; TO268
Gate-source voltage: 30V
On-state resistance: 0.32Ω
Mounting: SMD
Gate charge: 113nC
Kind of channel: enhancement
Reverse recovery time: 220ns
Application: automotive industry
Produkt ist nicht verfügbar
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| IXFX26N100P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 26A; 780W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 26A
Power dissipation: 780W
Case: PLUS247™
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 26A; 780W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 26A
Power dissipation: 780W
Case: PLUS247™
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IXTA1R6N100D2-TRL |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 1.6A; 100W; D2PAK,TO263; 970ns
Type of transistor: N-MOSFET
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 100W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 27nC
Reverse recovery time: 970ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 1.6A; 100W; D2PAK,TO263; 970ns
Type of transistor: N-MOSFET
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 100W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 27nC
Reverse recovery time: 970ns
Produkt ist nicht verfügbar
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| IXTY1R6N100D2-TRL |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 1.6A; Idm: 1.6A; 100W; DPAK; 970ns
Type of transistor: N-MOSFET
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 100W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 27nC
Kind of channel: enhancement
Reverse recovery time: 970ns
Pulsed drain current: 1.6A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 1.6A; Idm: 1.6A; 100W; DPAK; 970ns
Type of transistor: N-MOSFET
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 100W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 27nC
Kind of channel: enhancement
Reverse recovery time: 970ns
Pulsed drain current: 1.6A
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| IXFP7N100P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 7A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 7A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
auf Bestellung 299 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFA7N100P |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO263; 300ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 7A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: SMD
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO263; 300ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 7A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: SMD
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
auf Bestellung 132 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFH7N100P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 7A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 7A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFA7N100P-TRL |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 7A; 300W; D2PAK,TO263; 300ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 1kV
Drain current: 7A
Power dissipation: 300W
Case: D2PAK; TO263
Gate-source voltage: 30V
On-state resistance: 1.9Ω
Mounting: SMD
Gate charge: 47nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 7A; 300W; D2PAK,TO263; 300ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 1kV
Drain current: 7A
Power dissipation: 300W
Case: D2PAK; TO263
Gate-source voltage: 30V
On-state resistance: 1.9Ω
Mounting: SMD
Gate charge: 47nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| IXGH72N60A3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 885ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 885ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXGH48N60A3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| IXGP48N60A3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXGP36N60A3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 220W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 220W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 43ns
Turn-off time: 1µs
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 220W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 220W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 43ns
Turn-off time: 1µs
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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| IXGA36N60A3-TRL |
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 36A; 220W; TO263
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 220W
Case: TO263
Mounting: SMD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 36A; 220W; TO263
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 220W
Case: TO263
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| IXGT72N60A3-TRL |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 540W; TO268
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 540W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: SMD
Gate charge: 230nC
Kind of package: reel; tape
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 540W; TO268
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 540W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: SMD
Gate charge: 230nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 400 Stücke
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| IXGX72N60A3H1 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Turn-on time: 63ns
Turn-off time: 885ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Turn-on time: 63ns
Turn-off time: 885ns
Produkt ist nicht verfügbar
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| IXYA20N65C3D1 |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 200W
Case: TO263
Gate-emitter voltage: ±20V
Mounting: SMD
Kind of package: tube
Pulsed collector current: 105A
Turn-on time: 51ns
Turn-off time: 132ns
Gate charge: 30nC
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 200W
Case: TO263
Gate-emitter voltage: ±20V
Mounting: SMD
Kind of package: tube
Pulsed collector current: 105A
Turn-on time: 51ns
Turn-off time: 132ns
Gate charge: 30nC
auf Bestellung 125 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTH20N65X |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO247-3; 350ns
Type of transistor: N-MOSFET
Power dissipation: 320W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 650V
On-state resistance: 0.21Ω
Reverse recovery time: 0.35µs
Gate charge: 35nC
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO247-3; 350ns
Type of transistor: N-MOSFET
Power dissipation: 320W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 650V
On-state resistance: 0.21Ω
Reverse recovery time: 0.35µs
Gate charge: 35nC
Polarisation: unipolar
auf Bestellung 244 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTA20N65X2 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 22A; 290W; D2PAK
Type of transistor: N-MOSFET
Power dissipation: 290W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
On-state resistance: 0.185Ω
Pulsed drain current: 22A
Gate charge: 27nC
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 22A; 290W; D2PAK
Type of transistor: N-MOSFET
Power dissipation: 290W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
On-state resistance: 0.185Ω
Pulsed drain current: 22A
Gate charge: 27nC
Polarisation: unipolar
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
| IXYP20N65C3 |
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 200W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Pulsed collector current: 105A
Gate charge: 30nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 200W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Pulsed collector current: 105A
Gate charge: 30nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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Stück im Wert von UAH
| IXYA20N65C3 |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 230W
Case: TO263
Gate-emitter voltage: ±20V
Mounting: SMD
Kind of package: tube
Pulsed collector current: 105A
Turn-on time: 51ns
Turn-off time: 132ns
Gate charge: 30nC
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 230W
Case: TO263
Gate-emitter voltage: ±20V
Mounting: SMD
Kind of package: tube
Pulsed collector current: 105A
Turn-on time: 51ns
Turn-off time: 132ns
Gate charge: 30nC
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IXTH20N65X2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 290W; TO247-3; 350ns
Type of transistor: N-MOSFET
Power dissipation: 290W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 650V
On-state resistance: 0.185Ω
Reverse recovery time: 0.35µs
Gate charge: 27nC
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 290W; TO247-3; 350ns
Type of transistor: N-MOSFET
Power dissipation: 290W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 650V
On-state resistance: 0.185Ω
Reverse recovery time: 0.35µs
Gate charge: 27nC
Polarisation: unipolar
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| IXTP20N65X |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO220AB; 350ns
Type of transistor: N-MOSFET
Power dissipation: 320W
Case: TO220AB
Mounting: THT
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 650V
On-state resistance: 0.21Ω
Reverse recovery time: 0.35µs
Gate charge: 35nC
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO220AB; 350ns
Type of transistor: N-MOSFET
Power dissipation: 320W
Case: TO220AB
Mounting: THT
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 650V
On-state resistance: 0.21Ω
Reverse recovery time: 0.35µs
Gate charge: 35nC
Polarisation: unipolar
Produkt ist nicht verfügbar
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| IXTA20N65X |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO220AB; 350ns
Type of transistor: N-MOSFET
Power dissipation: 320W
Case: TO220AB
Mounting: THT
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 650V
On-state resistance: 0.21Ω
Reverse recovery time: 0.35µs
Gate charge: 35nC
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO220AB; 350ns
Type of transistor: N-MOSFET
Power dissipation: 320W
Case: TO220AB
Mounting: THT
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 650V
On-state resistance: 0.21Ω
Reverse recovery time: 0.35µs
Gate charge: 35nC
Polarisation: unipolar
Produkt ist nicht verfügbar
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| IXTP20N65X2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 290W; TO220AB; 350ns
Type of transistor: N-MOSFET
Power dissipation: 290W
Case: TO220AB
Mounting: THT
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 650V
On-state resistance: 0.185Ω
Reverse recovery time: 0.35µs
Gate charge: 27nC
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 290W; TO220AB; 350ns
Type of transistor: N-MOSFET
Power dissipation: 290W
Case: TO220AB
Mounting: THT
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 650V
On-state resistance: 0.185Ω
Reverse recovery time: 0.35µs
Gate charge: 27nC
Polarisation: unipolar
Produkt ist nicht verfügbar
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| IXYA20N65C3-TRL |
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 230W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 230W
Case: D2PAK
Gate-emitter voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 105A
Gate charge: 30nC
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 230W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 230W
Case: D2PAK
Gate-emitter voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 105A
Gate charge: 30nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| IXFN160N30T |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 300V; 130A; SOT227B; screw; Idm: 444A
Technology: GigaMOS™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 130A
Pulsed drain current: 444A
Power dissipation: 900W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 19mΩ
Gate charge: 376nC
Kind of channel: enhancement
Reverse recovery time: 200ns
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Category: Transistor modules
Description: Module; single transistor; 300V; 130A; SOT227B; screw; Idm: 444A
Technology: GigaMOS™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 130A
Pulsed drain current: 444A
Power dissipation: 900W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 19mΩ
Gate charge: 376nC
Kind of channel: enhancement
Reverse recovery time: 200ns
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
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| IXFX160N30T |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 160A; 1390W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 160A
Power dissipation: 1390W
Case: PLUS247™
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 376nC
Kind of channel: enhancement
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 160A; 1390W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 160A
Power dissipation: 1390W
Case: PLUS247™
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 376nC
Kind of channel: enhancement
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IXFK160N30T |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 300V; 160A; 1390W; TO264
Type of transistor: N-MOSFET
Technology: GigaMOS™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 160A
Power dissipation: 1390W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 376nC
Kind of channel: enhancement
Reverse recovery time: 200ns
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 300V; 160A; 1390W; TO264
Type of transistor: N-MOSFET
Technology: GigaMOS™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 160A
Power dissipation: 1390W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 376nC
Kind of channel: enhancement
Reverse recovery time: 200ns
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IXFB300N10P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 300A; 1500W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 300A
Power dissipation: 1.5kW
Case: PLUS264™
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 279nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 300A; 1500W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 300A
Power dissipation: 1.5kW
Case: PLUS264™
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 279nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXFT140N10P-TRL |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 140A; 600W; D3PAK,TO268; 200ns
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: D3PAK; TO268
Gate-source voltage: 20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 155nC
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: HiPerFET™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 140A; 600W; D3PAK,TO268; 200ns
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: D3PAK; TO268
Gate-source voltage: 20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 155nC
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: HiPerFET™
Produkt ist nicht verfügbar
Mindestbestellmenge: 400 Stücke
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| IXTT140N10P-TRL |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 140A; 600W; D3PAK,TO268; 120ns
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: D3PAK; TO268
Gate-source voltage: 20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 155nC
Kind of channel: enhancement
Reverse recovery time: 120ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 140A; 600W; D3PAK,TO268; 120ns
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: D3PAK; TO268
Gate-source voltage: 20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 155nC
Kind of channel: enhancement
Reverse recovery time: 120ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 400 Stücke
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| IXFP10N60P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 120ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.74Ω
Mounting: THT
Gate charge: 32nC
Kind of channel: enhancement
Kind of package: tube
Reverse recovery time: 120ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 120ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.74Ω
Mounting: THT
Gate charge: 32nC
Kind of channel: enhancement
Kind of package: tube
Reverse recovery time: 120ns
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTP10N60P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.74Ω
Mounting: THT
Gate charge: 32nC
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Kind of package: tube
Reverse recovery time: 0.5µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.74Ω
Mounting: THT
Gate charge: 32nC
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Kind of package: tube
Reverse recovery time: 0.5µs
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| IXFA10N60P |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 10A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO263
On-state resistance: 0.74Ω
Mounting: SMD
Gate charge: 32nC
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Kind of package: tube
Reverse recovery time: 120ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 10A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO263
On-state resistance: 0.74Ω
Mounting: SMD
Gate charge: 32nC
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Kind of package: tube
Reverse recovery time: 120ns
Produkt ist nicht verfügbar
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| IXFA10N60P-TRL |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 10A; 200W; D2PAK; 200ns
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: 30V
On-state resistance: 0.74Ω
Mounting: SMD
Gate charge: 32nC
Kind of channel: enhancement
Technology: HiPerFET™
Reverse recovery time: 200ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 10A; 200W; D2PAK; 200ns
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: 30V
On-state resistance: 0.74Ω
Mounting: SMD
Gate charge: 32nC
Kind of channel: enhancement
Technology: HiPerFET™
Reverse recovery time: 200ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| IXTA10N60P |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 10A; 200W; D2PAK,TO263AB; 500ns
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: D2PAK; TO263AB
Gate-source voltage: 30V
On-state resistance: 0.74Ω
Mounting: SMD
Gate charge: 32nC
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 10A; 200W; D2PAK,TO263AB; 500ns
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: D2PAK; TO263AB
Gate-source voltage: 30V
On-state resistance: 0.74Ω
Mounting: SMD
Gate charge: 32nC
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXFN110N60P3 |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 600V; 90A; SOT227B; screw; Idm: 275A
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 90A
Power dissipation: 1.5kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 56mΩ
Gate charge: 254nC
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Pulsed drain current: 275A
Type of semiconductor module: MOSFET transistor
Category: Transistor modules
Description: Module; single transistor; 600V; 90A; SOT227B; screw; Idm: 275A
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 90A
Power dissipation: 1.5kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 56mΩ
Gate charge: 254nC
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Pulsed drain current: 275A
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
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| IXFB110N60P3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 110A; 1890W; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 110A
Power dissipation: 1890W
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 254nC
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Kind of package: tube
Reverse recovery time: 250ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 110A; 1890W; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 110A
Power dissipation: 1890W
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 254nC
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Kind of package: tube
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
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| IXTT75N10L2 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 100V; 75A; 400W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 400W
Case: TO268
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 215nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Technology: Linear L2™
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 100V; 75A; 400W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 400W
Case: TO268
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 215nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Technology: Linear L2™
Gate-source voltage: ±20V
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTB62N50L |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 62A; 800W; PLUS264™; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 62A
Power dissipation: 800W
Case: PLUS264™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 550nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 62A; 800W; PLUS264™; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 62A
Power dissipation: 800W
Case: PLUS264™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 550nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTK200N10L2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 100V; 200A; 1040W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 1.04kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 540nC
Kind of package: tube
Kind of channel: enhancement
Technology: Linear L2™
Reverse recovery time: 245ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 100V; 200A; 1040W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 1.04kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 540nC
Kind of package: tube
Kind of channel: enhancement
Technology: Linear L2™
Reverse recovery time: 245ns
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