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LAA125L LAA125L IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923B5A0C7&compId=LAA125L.pdf?ci_sign=8ce76c522e028f88ab94d53b2bb700a91cb7f50a Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 16Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
auf Bestellung 95 Stücke:
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13+5.75 EUR
16+4.6 EUR
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LAA125P LAA125P IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923B3E0C7&compId=LAA125.pdf?ci_sign=2b631907f03b92f856d0d76b7c03ec658d5a2904 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x2.16mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 16Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
auf Bestellung 100 Stücke:
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16+4.75 EUR
100+3.92 EUR
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IXFP14N85XM IXFP14N85XM IXYS IXFP14N85XM.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 38W; TO220FP; 116ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 14A
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 38W
Features of semiconductor devices: ultra junction x-class
Gate charge: 30nC
Reverse recovery time: 116ns
auf Bestellung 43 Stücke:
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12+6.01 EUR
14+5.41 EUR
15+4.78 EUR
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IXFP14N60P IXFP14N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDEEAC7F2C1820&compId=IXFA(H%2CP)14N60P.pdf?ci_sign=5aa1a89e4b5aa53af0f76f9a77c0ac0d77456c56 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
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IXTA2N100P IXTA2N100P IXYS IXTA(P,Y)2N100P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO263; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 86W
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 800ns
Drain current: 2A
Drain-source voltage: 1kV
auf Bestellung 293 Stücke:
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24+3.07 EUR
27+2.7 EUR
30+2.46 EUR
50+2.4 EUR
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IXTY2N100P IXTY2N100P IXYS IXTA(P,Y)2N100P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO252; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 86W
Case: TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 800ns
Drain current: 2A
Drain-source voltage: 1kV
auf Bestellung 1 Stücke:
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1+71.5 EUR
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IXFR32N100Q3 IXFR32N100Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6C11820&compId=IXFR32N100Q3.pdf?ci_sign=207d43adf354c4b1b1b46c20c722f96e3911f588 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; 570W; ISOPLUS247™
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 195nC
On-state resistance: 0.35Ω
Drain current: 23A
Power dissipation: 570W
Drain-source voltage: 1kV
Kind of channel: enhancement
Case: ISOPLUS247™
auf Bestellung 30 Stücke:
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2+55.26 EUR
3+49.76 EUR
10+43.93 EUR
30+39.47 EUR
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IXFK52N100X IXFK52N100X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2894A9AD9909820&compId=IXFK(X)52N100X.pdf?ci_sign=d2feeeb089048c7914dc2f8557add2bc13006bca Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 52A; 1250W; TO264; 260ns
Drain-source voltage: 1kV
Drain current: 52A
Case: TO264
Polarisation: unipolar
On-state resistance: 0.125Ω
Power dissipation: 1.25kW
Kind of channel: enhancement
Gate charge: 245nC
Reverse recovery time: 260ns
Type of transistor: N-MOSFET
Features of semiconductor devices: ultra junction x-class
Kind of package: tube
Mounting: THT
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IXFN52N100X IXFN52N100X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA7BFE6B4303820&compId=IXFN52N100X.pdf?ci_sign=6faa9317751d0bee219574a5021961c804a68910 Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 44A; SOT227B; screw; Idm: 100A; 830W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 44A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.125Ω
Pulsed drain current: 100A
Power dissipation: 830W
Technology: HiPerFET™; X-Class
Kind of channel: enhancement
Gate charge: 245nC
Reverse recovery time: 260ns
Gate-source voltage: ±40V
Mechanical mounting: screw
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DSS6-0025BS DSS6-0025BS IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991CAE9537B9338BF&compId=DSS6-0025BS.pdf?ci_sign=c4764c4d2d09aff3e5d75d1005bf3fe019d6e548 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 25V; 6A; reel,tape; 40W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.3V
Load current: 6A
Max. off-state voltage: 25V
Power dissipation: 40W
Max. forward impulse current: 120A
Case: DPAK
auf Bestellung 693 Stücke:
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82+0.87 EUR
114+0.63 EUR
131+0.55 EUR
250+0.51 EUR
500+0.49 EUR
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IXXH75N60B3D1 IXXH75N60B3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB15D1C4927820&compId=IXXH75N60B3D1.pdf?ci_sign=bdc739111de6b9c22e1ccea3f1e37d6575acee96 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Pulsed collector current: 300A
Collector-emitter voltage: 600V
Turn-on time: 108ns
Turn-off time: 315ns
Gate-emitter voltage: ±20V
Collector current: 75A
Produkt ist nicht verfügbar
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CPC1788J CPC1788J IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492C38F17C0C7&compId=CPC1788.pdf?ci_sign=5afe43b0f4acb5db424133f790bb06fafda6d713 Category: DC Solid State Relays
Description: Relay: solid state; 1200mA; max.1kVDC; THT; ISOPLUS264™; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 1.2A
Switched voltage: max. 1kV DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 1.25Ω
Mounting: THT
Case: ISOPLUS264™
Operating temperature: -40...85°C
Turn-on time: 20ms
Turn-off time: 5ms
Body dimensions: 19.91x26.16x5.03mm
Control current max.: 100mA
Insulation voltage: 2.5kV
Kind of output: MOSFET
auf Bestellung 29 Stücke:
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5+16.4 EUR
25+14.43 EUR
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DSEP29-12A DSEP29-12A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD59D0904DFD8BF&compId=DSEP29-12A.pdf?ci_sign=52e4f654c53702ba952ecba83e74d2eda922abbb Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO220AC; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO220AC
Max. forward voltage: 1.81V
Power dissipation: 165W
Reverse recovery time: 40ns
Technology: HiPerFRED™
auf Bestellung 197 Stücke:
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14+5.18 EUR
22+3.26 EUR
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MCMA140P1600TA MCMA140P1600TA IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EB69BB909ED18BF&compId=MCMA140P1600TA.pdf?ci_sign=b12199e01ae05027ecc8d6bac32e78da8a23126a pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 140A; TO240AA; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.28V
Max. forward impulse current: 2.04kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 150/200mA
auf Bestellung 17 Stücke:
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2+46.52 EUR
5+45.27 EUR
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IXFH16N60P3 IXFH16N60P3 IXYS IXFA(H,P)16N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO247-3
On-state resistance: 470mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
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IXYY8N90C3 IXYY8N90C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA8BDD5D271820&compId=IXYP(y)8N90C3.pdf?ci_sign=87d38d8134be933eddf2b12248973e933ae93bed Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO252
Type of transistor: IGBT
Power dissipation: 125W
Case: TO252
Mounting: SMD
Gate charge: 13.3nC
Kind of package: tube
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Turn-on time: 39ns
Turn-off time: 238ns
Collector current: 8A
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
auf Bestellung 350 Stücke:
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17+4.46 EUR
25+3.42 EUR
70+2.56 EUR
140+2.22 EUR
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IXYP8N90C3D1 IXYP8N90C3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA81152D6A3820&compId=IXYA(P)8N90C3D1.pdf?ci_sign=c7b8202f446f82c0bef2c4432c38a5e99932308d Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Mounting: THT
Case: TO220-3
Kind of package: tube
Gate charge: 13.3nC
Turn-on time: 39ns
Turn-off time: 238ns
Collector current: 8A
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Power dissipation: 125W
auf Bestellung 126 Stücke:
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16+4.52 EUR
18+4.06 EUR
20+3.59 EUR
50+3.23 EUR
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IXYP8N90C3 IXYP8N90C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA8BDD5D271820&compId=IXYP(y)8N90C3.pdf?ci_sign=87d38d8134be933eddf2b12248973e933ae93bed Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Mounting: THT
Case: TO220-3
Kind of package: tube
Gate charge: 13.3nC
Turn-on time: 39ns
Turn-off time: 238ns
Collector current: 8A
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Power dissipation: 125W
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IXYA8N90C3D1 IXYA8N90C3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA81152D6A3820&compId=IXYA(P)8N90C3D1.pdf?ci_sign=c7b8202f446f82c0bef2c4432c38a5e99932308d Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO263
Type of transistor: IGBT
Power dissipation: 125W
Case: TO263
Mounting: SMD
Gate charge: 13.3nC
Kind of package: tube
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Turn-on time: 39ns
Turn-off time: 238ns
Collector current: 8A
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
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IXFH18N90P IXFH18N90P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDED315747B820&compId=IXFH(T%2CV)18N90P_S.pdf?ci_sign=6b536d99f033869bf3dd648e0658e04c48509b89 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 18A; 540W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 18A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhancement
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IXFK220N20X3 IXFK220N20X3 IXYS IXF_220N20X3_HV.pdf 200VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 220A
Power dissipation: 960W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: THT
Gate charge: 204nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 116ns
Technology: HiPerFET™; X3-Class
auf Bestellung 44 Stücke:
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4+18.76 EUR
10+17.02 EUR
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IXFT220N20X3HV IXFT220N20X3HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBA1A126E3F8BF&compId=IXF_220N20X3_HV.pdf?ci_sign=5f237aaca4b9ebf80eb09fb21e52fd45391ea24c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO268
Case: TO268
Mounting: SMD
Gate-source voltage: ±20V
Gate charge: 204nC
Reverse recovery time: 116ns
On-state resistance: 6.2mΩ
Drain current: 220A
Power dissipation: 960W
Drain-source voltage: 200V
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Type of transistor: N-MOSFET
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IXFH220N20X3 IXFH220N20X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBA1A126E3F8BF&compId=IXF_220N20X3_HV.pdf?ci_sign=5f237aaca4b9ebf80eb09fb21e52fd45391ea24c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO247-3
Case: TO247-3
Mounting: THT
Gate-source voltage: ±20V
Gate charge: 204nC
Reverse recovery time: 116ns
On-state resistance: 6.2mΩ
Drain current: 220A
Power dissipation: 960W
Drain-source voltage: 200V
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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MEA250-12DA IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode modules
Description: Module: diode; common anode; 1.2kV; If: 260A; Y4-M6; Ufmax: 1.54V
Type of semiconductor module: diode
Semiconductor structure: common anode
Max. off-state voltage: 1.2kV
Load current: 260A
Case: Y4-M6
Max. forward voltage: 1.54V
Max. forward impulse current: 2.4kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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XAA117S XAA117S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F36C0C7&compId=XAA117.pdf?ci_sign=77132553ff3a4f20566f562d6dd863227af09005 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 16Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
auf Bestellung 250 Stücke:
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18+4.13 EUR
50+2.72 EUR
250+2.17 EUR
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XAA117P XAA117P IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F36C0C7&compId=XAA117.pdf?ci_sign=77132553ff3a4f20566f562d6dd863227af09005 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 16Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
auf Bestellung 243 Stücke:
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50+2.72 EUR
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XAA117 XAA117 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F36C0C7&compId=XAA117.pdf?ci_sign=77132553ff3a4f20566f562d6dd863227af09005 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 16Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
auf Bestellung 210 Stücke:
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18+4.13 EUR
50+2.72 EUR
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XAA117PTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F36C0C7&compId=XAA117.pdf?ci_sign=77132553ff3a4f20566f562d6dd863227af09005 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 16Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
Produkt ist nicht verfügbar
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XAA117STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F36C0C7&compId=XAA117.pdf?ci_sign=77132553ff3a4f20566f562d6dd863227af09005 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 16Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
Produkt ist nicht verfügbar
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IXGA30N120B3 IXGA30N120B3 IXYS IXGA(H,P)30N120B3.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO263
Type of transistor: IGBT
Case: TO263
Technology: GenX3™; PT
Kind of package: tube
Mounting: SMD
Turn-on time: 56ns
Gate charge: 87nC
Turn-off time: 471ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 150A
Power dissipation: 300W
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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IXYH30N120C3 IXYH30N120C3 IXYS IXY_30N120C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Technology: GenX3™; XPT™
Kind of package: tube
Mounting: THT
Turn-on time: 71ns
Gate charge: 69nC
Turn-off time: 296ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 145A
Power dissipation: 500W
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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IXFN30N120P IXFN30N120P IXYS IXFN30N120P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 30A; SOT227B; screw; Idm: 75A
Case: SOT227B
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Gate-source voltage: ±40V
Gate charge: 310nC
Reverse recovery time: 300ns
On-state resistance: 0.35Ω
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 890W
Drain-source voltage: 1.2kV
Produkt ist nicht verfügbar
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IXFB30N120P IXFB30N120P IXYS IXFB30N120P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 30A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Case: PLUS264™
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: ±30V
Gate charge: 310nC
Reverse recovery time: 300ns
On-state resistance: 0.35Ω
Drain current: 30A
Power dissipation: 1.25kW
Drain-source voltage: 1.2kV
Produkt ist nicht verfügbar
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IXGT30N120B3D1 IXGT30N120B3D1 IXYS IXGH(t)30N120B3D1.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO268
Type of transistor: IGBT
Case: TO268
Technology: GenX3™; PT
Kind of package: tube
Mounting: SMD
Turn-on time: 56ns
Gate charge: 87nC
Turn-off time: 471ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 150A
Power dissipation: 300W
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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IXYH30N120C3D1 IXYH30N120C3D1 IXYS IXYH30N120C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 416W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Technology: GenX3™; Planar; XPT™
Kind of package: tube
Mounting: THT
Turn-on time: 71ns
Gate charge: 69nC
Turn-off time: 296ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 133A
Power dissipation: 416W
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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IXYP30N120C3 IXYP30N120C3 IXYS IXY_30N120C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO220-3
Type of transistor: IGBT
Case: TO220-3
Technology: GenX3™; Planar; XPT™
Kind of package: tube
Mounting: THT
Turn-on time: 71ns
Gate charge: 69nC
Turn-off time: 296ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 145A
Power dissipation: 500W
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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IXA33IF1200HB IXA33IF1200HB IXYS IXA33IF1200HB.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; Sonic FRD™; 1.2kV; 34A; 250W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Technology: Sonic FRD™; XPT™
Kind of package: tube
Mounting: THT
Turn-on time: 110ns
Gate charge: 76nC
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 34A
Pulsed collector current: 75A
Power dissipation: 250W
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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LOC112S LOC112S IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ADF4EA9EF01EC&compId=LOC112P.pdf?ci_sign=8cbac573205132593f6f59bb6199ad1903ebb2fb Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Insulation voltage: 3.75kV
Trigger current: 1A
Mounting: SMD
Number of channels: 1
auf Bestellung 100 Stücke:
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20+3.6 EUR
24+3 EUR
27+2.7 EUR
100+2.45 EUR
Mindestbestellmenge: 20
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IXTP14N60PM IXTP14N60PM IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F1339820&compId=IXTP14N60PM.pdf?ci_sign=fe79afdb307ca615dc69964670973d4c6149b61e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 75W; TO220FP; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 75W
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: standard power mosfet
Produkt ist nicht verfügbar
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IXTP230N04T4M IXTP230N04T4M IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F1365820&compId=IXTP230N04T4M.pdf?ci_sign=027a29a87a204a8cf3033295a7b62dd3a81d9d5b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 40W; TO220FP; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 40W
Case: TO220FP
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 32ns
Produkt ist nicht verfügbar
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IXFP30N25X3 IXFP30N25X3 IXYS IXFA(P,Y)30N25X3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO220AB; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 170W
Case: TO220AB
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 82ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 291 Stücke:
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10+7.32 EUR
15+4.93 EUR
50+4.83 EUR
Mindestbestellmenge: 10
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IXFY30N25X3 IXFY30N25X3 IXYS IXFA(P,Y)30N25X3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO252; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 170W
Case: TO252
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 82ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 46 Stücke:
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13+5.62 EUR
15+4.96 EUR
25+4.69 EUR
Mindestbestellmenge: 13
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IXBN75N170A IXBN75N170A IXYS 98938.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 42A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
Collector current: 42A
Case: SOT227B
Application: for UPS; motors
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mechanical mounting: screw
Power dissipation: 500W
Technology: BiMOSFET™
auf Bestellung 2 Stücke:
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1+75.73 EUR
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IXyH100N65C3 IXyH100N65C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA9FE9B182D9820&compId=IXYH100N65C3.pdf?ci_sign=69e3af69d2cb14ebc6509d3947bbc7d28a48c48b Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 830W; TO247-3
Case: TO247-3
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Turn-on time: 62ns
Gate charge: 172nC
Turn-off time: 200ns
Gate-emitter voltage: ±20V
Power dissipation: 830W
Collector current: 100A
Pulsed collector current: 420A
Collector-emitter voltage: 650V
auf Bestellung 282 Stücke:
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6+12.33 EUR
7+11.41 EUR
10+10.88 EUR
30+10.61 EUR
Mindestbestellmenge: 6
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IXFP4N100P IXFP4N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D504A4ED455820&compId=IXFA(P)4N100P.pdf?ci_sign=3bc1928e6ac9c7c21646c91f222f882230a1532c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 26nC
Power dissipation: 150W
auf Bestellung 419 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.18 EUR
20+3.76 EUR
22+3.32 EUR
50+3 EUR
Mindestbestellmenge: 18
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IXDI614CI IXDI614CI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-off time: 130ns
Turn-on time: 140ns
auf Bestellung 1266 Stücke:
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15+4.92 EUR
16+4.66 EUR
17+4.29 EUR
Mindestbestellmenge: 15
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IXDN614CI IXDN614CI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
auf Bestellung 728 Stücke:
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13+5.59 EUR
17+4.28 EUR
25+4.2 EUR
Mindestbestellmenge: 13
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IXDD614CI IXDD614CI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
auf Bestellung 785 Stücke:
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15+5 EUR
18+4.02 EUR
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IXDN609CI IXDN609CI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 1061 Stücke:
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20+3.7 EUR
26+2.8 EUR
27+2.7 EUR
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IXDN630MCI IXDN630MCI IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 9÷35V
Kind of package: tube
Operating temperature: -40...125°C
Output current: -30...30A
Turn-off time: 135ns
Turn-on time: 135ns
Number of channels: 1
Supply voltage: 9...35V
Case: TO220-5
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Mounting: THT
Kind of output: non-inverting
auf Bestellung 110 Stücke:
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9+8.15 EUR
10+7.82 EUR
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IXDI630MCI IXDI630MCI IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Kind of package: tube
Operating temperature: -40...125°C
Output current: -30...30A
Turn-off time: 135ns
Turn-on time: 135ns
Number of channels: 1
Supply voltage: 12.5...35V
Case: TO220-5
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Mounting: THT
Kind of output: inverting
auf Bestellung 207 Stücke:
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7+10.98 EUR
10+7.49 EUR
50+7.14 EUR
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LF2388BTR LF2388BTR IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91F27C32DDFA40CE&compId=LF2388BTR.pdf?ci_sign=0ffe7b00e916e274b61faec0bc85889558573824 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO20
Output current: -750...420mA
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 6
Voltage class: 600V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DSEC120-12AK DSEC120-12AK IXYS Littelfuse-Power-Semiconductors-DSEC120-12AK-Datasheet?assetguid=6d7c4a83-944f-41eb-8b81-8f646ced8d79 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60Ax2; tube; Ifsm: 500A; TO264; 330W
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Type of diode: rectifying
Kind of package: tube
Case: TO264
Mounting: THT
Reverse recovery time: 40ns
Max. forward voltage: 2.66V
Load current: 60A x2
Max. forward impulse current: 0.5kA
Max. off-state voltage: 1.2kV
Power dissipation: 330W
auf Bestellung 21 Stücke:
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4+19.08 EUR
10+16.9 EUR
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PLA150STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A99160C7&compId=PLA150.pdf?ci_sign=5c7b2ceba8611d1013361ab1d5aeffd0d8ee6558 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.250VAC
Type of relay: solid state
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Turn-on time: 2.5ms
Control current max.: 50mA
On-state resistance: 7Ω
Case: DIP6
Mounting: SMT
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Kind of output: MOSFET
Turn-off time: 0.5ms
Produkt ist nicht verfügbar
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IXFK240N25X3 IXFK240N25X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCD7F081F39820&compId=IXFK(X)240N25X3.pdf?ci_sign=505f1373677b8d12c73e55874fb205a4c2db2269 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 240A; 1250W; TO264; 177ns
Kind of channel: enhancement
Mounting: THT
Case: TO264
Type of transistor: N-MOSFET
Features of semiconductor devices: ultra junction x-class
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 177ns
Gate charge: 345nC
On-state resistance: 5mΩ
Drain current: 240A
Power dissipation: 1.25kW
Drain-source voltage: 250V
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
3+31.69 EUR
10+30.47 EUR
Mindestbestellmenge: 3
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LCB710 LCB710 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4942FD86A20C7&compId=LCB710.pdf?ci_sign=fec8a497ee6cfd935b3a12e0a9dcee5ec779b451 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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LCB710S LCB710S IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A5000E274458BF&compId=lcb710.pdf?ci_sign=6afcc9f1a3caec493c4d282148d45c8cc634e4bc Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Kind of output: MOSFET
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.44 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
LCB710STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4942FD86A20C7&compId=LCB710.pdf?ci_sign=fec8a497ee6cfd935b3a12e0a9dcee5ec779b451 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXXK100N60B3H1 IXXK100N60B3H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB5E9736E85820&compId=IXXK(X)100N60B3H1.pdf?ci_sign=d57f3e839e99034f93d7db6ec23554b65561ec01 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 695W; TO264
Type of transistor: IGBT
Power dissipation: 695W
Case: TO264
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 370A
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Turn-on time: 92ns
Turn-off time: 350ns
Produkt ist nicht verfügbar
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IXXX100N60B3H1 IXXX100N60B3H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB5E9736E85820&compId=IXXK(X)100N60B3H1.pdf?ci_sign=d57f3e839e99034f93d7db6ec23554b65561ec01 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 695W; PLUS247™
Type of transistor: IGBT
Power dissipation: 695W
Case: PLUS247™
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 370A
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Turn-on time: 92ns
Turn-off time: 350ns
Produkt ist nicht verfügbar
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LAA125L pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923B5A0C7&compId=LAA125L.pdf?ci_sign=8ce76c522e028f88ab94d53b2bb700a91cb7f50a
LAA125L
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 16Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.75 EUR
16+4.6 EUR
Mindestbestellmenge: 13
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LAA125P pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923B3E0C7&compId=LAA125.pdf?ci_sign=2b631907f03b92f856d0d76b7c03ec658d5a2904
LAA125P
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x2.16mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 16Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.75 EUR
100+3.92 EUR
Mindestbestellmenge: 16
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IXFP14N85XM IXFP14N85XM.pdf
IXFP14N85XM
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 38W; TO220FP; 116ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 14A
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 38W
Features of semiconductor devices: ultra junction x-class
Gate charge: 30nC
Reverse recovery time: 116ns
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.01 EUR
14+5.41 EUR
15+4.78 EUR
Mindestbestellmenge: 12
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IXFP14N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDEEAC7F2C1820&compId=IXFA(H%2CP)14N60P.pdf?ci_sign=5aa1a89e4b5aa53af0f76f9a77c0ac0d77456c56
IXFP14N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTA2N100P IXTA(P,Y)2N100P.pdf
IXTA2N100P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO263; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 86W
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 800ns
Drain current: 2A
Drain-source voltage: 1kV
auf Bestellung 293 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.07 EUR
27+2.7 EUR
30+2.46 EUR
50+2.4 EUR
Mindestbestellmenge: 24
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IXTY2N100P IXTA(P,Y)2N100P.pdf
IXTY2N100P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO252; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 86W
Case: TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 800ns
Drain current: 2A
Drain-source voltage: 1kV
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFR32N100Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6C11820&compId=IXFR32N100Q3.pdf?ci_sign=207d43adf354c4b1b1b46c20c722f96e3911f588
IXFR32N100Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; 570W; ISOPLUS247™
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 195nC
On-state resistance: 0.35Ω
Drain current: 23A
Power dissipation: 570W
Drain-source voltage: 1kV
Kind of channel: enhancement
Case: ISOPLUS247™
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+55.26 EUR
3+49.76 EUR
10+43.93 EUR
30+39.47 EUR
Mindestbestellmenge: 2
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IXFK52N100X pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2894A9AD9909820&compId=IXFK(X)52N100X.pdf?ci_sign=d2feeeb089048c7914dc2f8557add2bc13006bca
IXFK52N100X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 52A; 1250W; TO264; 260ns
Drain-source voltage: 1kV
Drain current: 52A
Case: TO264
Polarisation: unipolar
On-state resistance: 0.125Ω
Power dissipation: 1.25kW
Kind of channel: enhancement
Gate charge: 245nC
Reverse recovery time: 260ns
Type of transistor: N-MOSFET
Features of semiconductor devices: ultra junction x-class
Kind of package: tube
Mounting: THT
Produkt ist nicht verfügbar
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IXFN52N100X pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA7BFE6B4303820&compId=IXFN52N100X.pdf?ci_sign=6faa9317751d0bee219574a5021961c804a68910
IXFN52N100X
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 44A; SOT227B; screw; Idm: 100A; 830W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 44A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.125Ω
Pulsed drain current: 100A
Power dissipation: 830W
Technology: HiPerFET™; X-Class
Kind of channel: enhancement
Gate charge: 245nC
Reverse recovery time: 260ns
Gate-source voltage: ±40V
Mechanical mounting: screw
Produkt ist nicht verfügbar
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DSS6-0025BS pVersion=0046&contRep=ZT&docId=005056AB82531EE991CAE9537B9338BF&compId=DSS6-0025BS.pdf?ci_sign=c4764c4d2d09aff3e5d75d1005bf3fe019d6e548
DSS6-0025BS
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 25V; 6A; reel,tape; 40W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.3V
Load current: 6A
Max. off-state voltage: 25V
Power dissipation: 40W
Max. forward impulse current: 120A
Case: DPAK
auf Bestellung 693 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
82+0.87 EUR
114+0.63 EUR
131+0.55 EUR
250+0.51 EUR
500+0.49 EUR
Mindestbestellmenge: 82
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IXXH75N60B3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB15D1C4927820&compId=IXXH75N60B3D1.pdf?ci_sign=bdc739111de6b9c22e1ccea3f1e37d6575acee96
IXXH75N60B3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Pulsed collector current: 300A
Collector-emitter voltage: 600V
Turn-on time: 108ns
Turn-off time: 315ns
Gate-emitter voltage: ±20V
Collector current: 75A
Produkt ist nicht verfügbar
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CPC1788J pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492C38F17C0C7&compId=CPC1788.pdf?ci_sign=5afe43b0f4acb5db424133f790bb06fafda6d713
CPC1788J
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 1200mA; max.1kVDC; THT; ISOPLUS264™; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 1.2A
Switched voltage: max. 1kV DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 1.25Ω
Mounting: THT
Case: ISOPLUS264™
Operating temperature: -40...85°C
Turn-on time: 20ms
Turn-off time: 5ms
Body dimensions: 19.91x26.16x5.03mm
Control current max.: 100mA
Insulation voltage: 2.5kV
Kind of output: MOSFET
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+16.4 EUR
25+14.43 EUR
Mindestbestellmenge: 5
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DSEP29-12A pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD59D0904DFD8BF&compId=DSEP29-12A.pdf?ci_sign=52e4f654c53702ba952ecba83e74d2eda922abbb
DSEP29-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO220AC; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO220AC
Max. forward voltage: 1.81V
Power dissipation: 165W
Reverse recovery time: 40ns
Technology: HiPerFRED™
auf Bestellung 197 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.18 EUR
22+3.26 EUR
Mindestbestellmenge: 14
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MCMA140P1600TA pVersion=0046&contRep=ZT&docId=005056AB82531EE98EB69BB909ED18BF&compId=MCMA140P1600TA.pdf?ci_sign=b12199e01ae05027ecc8d6bac32e78da8a23126a pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
MCMA140P1600TA
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 140A; TO240AA; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.28V
Max. forward impulse current: 2.04kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 150/200mA
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+46.52 EUR
5+45.27 EUR
Mindestbestellmenge: 2
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IXFH16N60P3 IXFA(H,P)16N60P3.pdf
IXFH16N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO247-3
On-state resistance: 470mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
Produkt ist nicht verfügbar
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IXYY8N90C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA8BDD5D271820&compId=IXYP(y)8N90C3.pdf?ci_sign=87d38d8134be933eddf2b12248973e933ae93bed
IXYY8N90C3
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO252
Type of transistor: IGBT
Power dissipation: 125W
Case: TO252
Mounting: SMD
Gate charge: 13.3nC
Kind of package: tube
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Turn-on time: 39ns
Turn-off time: 238ns
Collector current: 8A
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
auf Bestellung 350 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.46 EUR
25+3.42 EUR
70+2.56 EUR
140+2.22 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IXYP8N90C3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA81152D6A3820&compId=IXYA(P)8N90C3D1.pdf?ci_sign=c7b8202f446f82c0bef2c4432c38a5e99932308d
IXYP8N90C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Mounting: THT
Case: TO220-3
Kind of package: tube
Gate charge: 13.3nC
Turn-on time: 39ns
Turn-off time: 238ns
Collector current: 8A
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Power dissipation: 125W
auf Bestellung 126 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.52 EUR
18+4.06 EUR
20+3.59 EUR
50+3.23 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
IXYP8N90C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA8BDD5D271820&compId=IXYP(y)8N90C3.pdf?ci_sign=87d38d8134be933eddf2b12248973e933ae93bed
IXYP8N90C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Mounting: THT
Case: TO220-3
Kind of package: tube
Gate charge: 13.3nC
Turn-on time: 39ns
Turn-off time: 238ns
Collector current: 8A
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Power dissipation: 125W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYA8N90C3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA81152D6A3820&compId=IXYA(P)8N90C3D1.pdf?ci_sign=c7b8202f446f82c0bef2c4432c38a5e99932308d
IXYA8N90C3D1
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO263
Type of transistor: IGBT
Power dissipation: 125W
Case: TO263
Mounting: SMD
Gate charge: 13.3nC
Kind of package: tube
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Turn-on time: 39ns
Turn-off time: 238ns
Collector current: 8A
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Produkt ist nicht verfügbar
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IXFH18N90P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDED315747B820&compId=IXFH(T%2CV)18N90P_S.pdf?ci_sign=6b536d99f033869bf3dd648e0658e04c48509b89
IXFH18N90P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 18A; 540W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 18A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFK220N20X3 IXF_220N20X3_HV.pdf 200VProductBrief.pdf
IXFK220N20X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 220A
Power dissipation: 960W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: THT
Gate charge: 204nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 116ns
Technology: HiPerFET™; X3-Class
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.76 EUR
10+17.02 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXFT220N20X3HV pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBA1A126E3F8BF&compId=IXF_220N20X3_HV.pdf?ci_sign=5f237aaca4b9ebf80eb09fb21e52fd45391ea24c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b
IXFT220N20X3HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO268
Case: TO268
Mounting: SMD
Gate-source voltage: ±20V
Gate charge: 204nC
Reverse recovery time: 116ns
On-state resistance: 6.2mΩ
Drain current: 220A
Power dissipation: 960W
Drain-source voltage: 200V
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFH220N20X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBA1A126E3F8BF&compId=IXF_220N20X3_HV.pdf?ci_sign=5f237aaca4b9ebf80eb09fb21e52fd45391ea24c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b
IXFH220N20X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO247-3
Case: TO247-3
Mounting: THT
Gate-source voltage: ±20V
Gate charge: 204nC
Reverse recovery time: 116ns
On-state resistance: 6.2mΩ
Drain current: 220A
Power dissipation: 960W
Drain-source voltage: 200V
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MEA250-12DA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; common anode; 1.2kV; If: 260A; Y4-M6; Ufmax: 1.54V
Type of semiconductor module: diode
Semiconductor structure: common anode
Max. off-state voltage: 1.2kV
Load current: 260A
Case: Y4-M6
Max. forward voltage: 1.54V
Max. forward impulse current: 2.4kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XAA117S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F36C0C7&compId=XAA117.pdf?ci_sign=77132553ff3a4f20566f562d6dd863227af09005
XAA117S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 16Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.13 EUR
50+2.72 EUR
250+2.17 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
XAA117P pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F36C0C7&compId=XAA117.pdf?ci_sign=77132553ff3a4f20566f562d6dd863227af09005
XAA117P
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 16Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
auf Bestellung 243 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.13 EUR
50+2.72 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
XAA117 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F36C0C7&compId=XAA117.pdf?ci_sign=77132553ff3a4f20566f562d6dd863227af09005
XAA117
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 16Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
auf Bestellung 210 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.13 EUR
50+2.72 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
XAA117PTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F36C0C7&compId=XAA117.pdf?ci_sign=77132553ff3a4f20566f562d6dd863227af09005
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 16Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XAA117STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F36C0C7&compId=XAA117.pdf?ci_sign=77132553ff3a4f20566f562d6dd863227af09005
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 16Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXGA30N120B3 IXGA(H,P)30N120B3.pdf
IXGA30N120B3
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO263
Type of transistor: IGBT
Case: TO263
Technology: GenX3™; PT
Kind of package: tube
Mounting: SMD
Turn-on time: 56ns
Gate charge: 87nC
Turn-off time: 471ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 150A
Power dissipation: 300W
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYH30N120C3 IXY_30N120C3.pdf
IXYH30N120C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Technology: GenX3™; XPT™
Kind of package: tube
Mounting: THT
Turn-on time: 71ns
Gate charge: 69nC
Turn-off time: 296ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 145A
Power dissipation: 500W
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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IXFN30N120P IXFN30N120P.pdf
IXFN30N120P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 30A; SOT227B; screw; Idm: 75A
Case: SOT227B
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Gate-source voltage: ±40V
Gate charge: 310nC
Reverse recovery time: 300ns
On-state resistance: 0.35Ω
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 890W
Drain-source voltage: 1.2kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFB30N120P IXFB30N120P.pdf
IXFB30N120P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 30A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Case: PLUS264™
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: ±30V
Gate charge: 310nC
Reverse recovery time: 300ns
On-state resistance: 0.35Ω
Drain current: 30A
Power dissipation: 1.25kW
Drain-source voltage: 1.2kV
Produkt ist nicht verfügbar
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IXGT30N120B3D1 IXGH(t)30N120B3D1.pdf
IXGT30N120B3D1
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO268
Type of transistor: IGBT
Case: TO268
Technology: GenX3™; PT
Kind of package: tube
Mounting: SMD
Turn-on time: 56ns
Gate charge: 87nC
Turn-off time: 471ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 150A
Power dissipation: 300W
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYH30N120C3D1 IXYH30N120C3D1.pdf
IXYH30N120C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 416W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Technology: GenX3™; Planar; XPT™
Kind of package: tube
Mounting: THT
Turn-on time: 71ns
Gate charge: 69nC
Turn-off time: 296ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 133A
Power dissipation: 416W
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYP30N120C3 IXY_30N120C3.pdf
IXYP30N120C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO220-3
Type of transistor: IGBT
Case: TO220-3
Technology: GenX3™; Planar; XPT™
Kind of package: tube
Mounting: THT
Turn-on time: 71ns
Gate charge: 69nC
Turn-off time: 296ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 145A
Power dissipation: 500W
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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IXA33IF1200HB IXA33IF1200HB.pdf
IXA33IF1200HB
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; Sonic FRD™; 1.2kV; 34A; 250W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Technology: Sonic FRD™; XPT™
Kind of package: tube
Mounting: THT
Turn-on time: 110ns
Gate charge: 76nC
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 34A
Pulsed collector current: 75A
Power dissipation: 250W
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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LOC112S pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ADF4EA9EF01EC&compId=LOC112P.pdf?ci_sign=8cbac573205132593f6f59bb6199ad1903ebb2fb
LOC112S
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Insulation voltage: 3.75kV
Trigger current: 1A
Mounting: SMD
Number of channels: 1
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.6 EUR
24+3 EUR
27+2.7 EUR
100+2.45 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IXTP14N60PM pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F1339820&compId=IXTP14N60PM.pdf?ci_sign=fe79afdb307ca615dc69964670973d4c6149b61e
IXTP14N60PM
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 75W; TO220FP; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 75W
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: standard power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTP230N04T4M pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F1365820&compId=IXTP230N04T4M.pdf?ci_sign=027a29a87a204a8cf3033295a7b62dd3a81d9d5b
IXTP230N04T4M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 40W; TO220FP; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 40W
Case: TO220FP
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 32ns
Produkt ist nicht verfügbar
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IXFP30N25X3 IXFA(P,Y)30N25X3.pdf
IXFP30N25X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO220AB; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 170W
Case: TO220AB
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 82ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 291 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.32 EUR
15+4.93 EUR
50+4.83 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IXFY30N25X3 IXFA(P,Y)30N25X3.pdf
IXFY30N25X3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO252; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 170W
Case: TO252
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 82ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.62 EUR
15+4.96 EUR
25+4.69 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IXBN75N170A 98938.pdf
IXBN75N170A
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 42A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
Collector current: 42A
Case: SOT227B
Application: for UPS; motors
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mechanical mounting: screw
Power dissipation: 500W
Technology: BiMOSFET™
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+75.73 EUR
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IXyH100N65C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA9FE9B182D9820&compId=IXYH100N65C3.pdf?ci_sign=69e3af69d2cb14ebc6509d3947bbc7d28a48c48b
IXyH100N65C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 830W; TO247-3
Case: TO247-3
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Turn-on time: 62ns
Gate charge: 172nC
Turn-off time: 200ns
Gate-emitter voltage: ±20V
Power dissipation: 830W
Collector current: 100A
Pulsed collector current: 420A
Collector-emitter voltage: 650V
auf Bestellung 282 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.33 EUR
7+11.41 EUR
10+10.88 EUR
30+10.61 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IXFP4N100P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D504A4ED455820&compId=IXFA(P)4N100P.pdf?ci_sign=3bc1928e6ac9c7c21646c91f222f882230a1532c
IXFP4N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 26nC
Power dissipation: 150W
auf Bestellung 419 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.18 EUR
20+3.76 EUR
22+3.32 EUR
50+3 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
IXDI614CI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d
IXDI614CI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-off time: 130ns
Turn-on time: 140ns
auf Bestellung 1266 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.92 EUR
16+4.66 EUR
17+4.29 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IXDN614CI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d
IXDN614CI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
auf Bestellung 728 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.59 EUR
17+4.28 EUR
25+4.2 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IXDD614CI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d
IXDD614CI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
auf Bestellung 785 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5 EUR
18+4.02 EUR
Mindestbestellmenge: 15
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IXDN609CI IXDD609CI.pdf
IXDN609CI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 1061 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.7 EUR
26+2.8 EUR
27+2.7 EUR
Mindestbestellmenge: 20
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IXDN630MCI pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c
IXDN630MCI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 9÷35V
Kind of package: tube
Operating temperature: -40...125°C
Output current: -30...30A
Turn-off time: 135ns
Turn-on time: 135ns
Number of channels: 1
Supply voltage: 9...35V
Case: TO220-5
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Mounting: THT
Kind of output: non-inverting
auf Bestellung 110 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.15 EUR
10+7.82 EUR
Mindestbestellmenge: 9
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IXDI630MCI pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c
IXDI630MCI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Kind of package: tube
Operating temperature: -40...125°C
Output current: -30...30A
Turn-off time: 135ns
Turn-on time: 135ns
Number of channels: 1
Supply voltage: 12.5...35V
Case: TO220-5
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Mounting: THT
Kind of output: inverting
auf Bestellung 207 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.98 EUR
10+7.49 EUR
50+7.14 EUR
Mindestbestellmenge: 7
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LF2388BTR pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91F27C32DDFA40CE&compId=LF2388BTR.pdf?ci_sign=0ffe7b00e916e274b61faec0bc85889558573824
LF2388BTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO20
Output current: -750...420mA
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 6
Voltage class: 600V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DSEC120-12AK Littelfuse-Power-Semiconductors-DSEC120-12AK-Datasheet?assetguid=6d7c4a83-944f-41eb-8b81-8f646ced8d79
DSEC120-12AK
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60Ax2; tube; Ifsm: 500A; TO264; 330W
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Type of diode: rectifying
Kind of package: tube
Case: TO264
Mounting: THT
Reverse recovery time: 40ns
Max. forward voltage: 2.66V
Load current: 60A x2
Max. forward impulse current: 0.5kA
Max. off-state voltage: 1.2kV
Power dissipation: 330W
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+19.08 EUR
10+16.9 EUR
Mindestbestellmenge: 4
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PLA150STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A99160C7&compId=PLA150.pdf?ci_sign=5c7b2ceba8611d1013361ab1d5aeffd0d8ee6558
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.250VAC
Type of relay: solid state
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Turn-on time: 2.5ms
Control current max.: 50mA
On-state resistance: 7Ω
Case: DIP6
Mounting: SMT
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Kind of output: MOSFET
Turn-off time: 0.5ms
Produkt ist nicht verfügbar
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IXFK240N25X3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCD7F081F39820&compId=IXFK(X)240N25X3.pdf?ci_sign=505f1373677b8d12c73e55874fb205a4c2db2269
IXFK240N25X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 240A; 1250W; TO264; 177ns
Kind of channel: enhancement
Mounting: THT
Case: TO264
Type of transistor: N-MOSFET
Features of semiconductor devices: ultra junction x-class
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 177ns
Gate charge: 345nC
On-state resistance: 5mΩ
Drain current: 240A
Power dissipation: 1.25kW
Drain-source voltage: 250V
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+31.69 EUR
10+30.47 EUR
Mindestbestellmenge: 3
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LCB710 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4942FD86A20C7&compId=LCB710.pdf?ci_sign=fec8a497ee6cfd935b3a12e0a9dcee5ec779b451
LCB710
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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LCB710S pVersion=0046&contRep=ZT&docId=005056AB82531EE995A5000E274458BF&compId=lcb710.pdf?ci_sign=6afcc9f1a3caec493c4d282148d45c8cc634e4bc
LCB710S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Kind of output: MOSFET
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.44 EUR
Mindestbestellmenge: 8
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LCB710STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4942FD86A20C7&compId=LCB710.pdf?ci_sign=fec8a497ee6cfd935b3a12e0a9dcee5ec779b451
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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IXXK100N60B3H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB5E9736E85820&compId=IXXK(X)100N60B3H1.pdf?ci_sign=d57f3e839e99034f93d7db6ec23554b65561ec01
IXXK100N60B3H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 695W; TO264
Type of transistor: IGBT
Power dissipation: 695W
Case: TO264
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 370A
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Turn-on time: 92ns
Turn-off time: 350ns
Produkt ist nicht verfügbar
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IXXX100N60B3H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB5E9736E85820&compId=IXXK(X)100N60B3H1.pdf?ci_sign=d57f3e839e99034f93d7db6ec23554b65561ec01
IXXX100N60B3H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 695W; PLUS247™
Type of transistor: IGBT
Power dissipation: 695W
Case: PLUS247™
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 370A
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Turn-on time: 92ns
Turn-off time: 350ns
Produkt ist nicht verfügbar
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