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DSA240X150NA DSA240X150NA IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991AF5C2EF0B738BF&compId=DSA240X150NA.pdf?ci_sign=0270766f6ee4cb1d8bd81ef7f4fa0462d6851a0d Category: Diode modules
Description: Module: diode; double independent; 150V; If: 120Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 150V
Load current: 120A x2
Case: SOT227B
Max. forward voltage: 0.85V
Max. forward impulse current: 1.6kA
Electrical mounting: screw
Max. load current: 120A
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Produkt ist nicht verfügbar
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MCD44-12IO1B MCD44-12IO1B IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFE07B6403440C4&compId=MCD44-12io1B.pdf?ci_sign=1b3aa2724d956d6eb5fa398b58d591e43dd7c413 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 49A; TO240AA; Ufmax: 1.34V; bulk
Max. off-state voltage: 1.2kV
Load current: 49A
Max. forward impulse current: 1.15kA
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.34V
Gate current: 100/200mA
Threshold on-voltage: 0.85V
Max. load current: 77A
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
auf Bestellung 46 Stücke:
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3+30.37 EUR
10+27.54 EUR
36+26.31 EUR
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MCD162-16io1 MCD162-16io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89FD6136CB9ABE143&compId=MCD162-16io1.pdf?ci_sign=0059e08e7eeb598895d2ad74edff6b821249c3b5 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Max. off-state voltage: 1.6kV
Load current: 181A
Max. forward impulse current: 6kA
Case: Y4-M6
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.03V
Gate current: 150/200mA
Threshold on-voltage: 0.88V
Max. load current: 300A
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
auf Bestellung 34 Stücke:
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1+76.96 EUR
6+72.13 EUR
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CPC1130N CPC1130N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF20CC0C7&compId=CPC1130N.pdf?ci_sign=44150b4b94226c50a67f054d89a376cc555a5c6e Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Case: SOP4
On-state resistance: 30Ω
Turn-off time: 2ms
Turn-on time: 2ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Switched voltage: max. 350V AC; max. 350V DC
auf Bestellung 12 Stücke:
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12+5.96 EUR
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IXFH6N120 IXFH6N120 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F945957227820&compId=IXFH6N120.pdf?ci_sign=8972d5a18a8270d253e814360323d28139e6664d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 6A
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 56nC
Power dissipation: 300W
auf Bestellung 17 Stücke:
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6+12.51 EUR
7+11.68 EUR
10+9.98 EUR
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IXFR16N120P IXFR16N120P IXYS IXFR16N120P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; 230W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 9A
Power dissipation: 230W
Case: ISOPLUS247™
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 10 Stücke:
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8+10.08 EUR
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MCMA400PD1600PTSF IXYS Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 400A; SimBus F; Ifsm: 10kA
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Case: SimBus F
Electrical mounting: Press-Fit; screw
Max. forward impulse current: 10kA
Load current: 400A
Max. off-state voltage: 1.6kV
Max. load current: 630A
Produkt ist nicht verfügbar
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CMA40E1600HR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB55D25969240C4&compId=CMA40E1600HR.pdf?ci_sign=6f80664eaf21c47f718bd7fb65bbdc0aa472624d Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 63A; 40A; Igt: 50/80mA; ISO247™; THT; tube
Case: ISO247™
Mounting: THT
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50/80mA
Max. forward impulse current: 470A
Load current: 40A
Max. off-state voltage: 1.6kV
Max. load current: 63A
Produkt ist nicht verfügbar
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DSEC59-06BC DSEC59-06BC IXYS DSE(A,C)-06BC.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 250A; ISOPLUS220™
Mounting: THT
Max. off-state voltage: 0.6kV
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Case: ISOPLUS220™
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 25ns
Max. forward voltage: 2.51V
Load current: 30A x2
Power dissipation: 135W
Max. forward impulse current: 250A
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17+4.32 EUR
19+3.89 EUR
21+3.45 EUR
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PS1201 PS1201 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F3300C7&compId=PS1201.pdf?ci_sign=0f613ed3e25b644f7c8a3385a41559216377d791 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; 1-phase
Mounting: THT
Type of relay: solid state
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 400V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Case: SIP4
auf Bestellung 135 Stücke:
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14+5.41 EUR
25+5.18 EUR
100+4.66 EUR
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IXTQ200N10T IXTQ200N10T IXYS IXTH(Q)200N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO3P; 76ns
Case: TO3P
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 76ns
Gate charge: 152nC
On-state resistance: 5.5mΩ
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 550W
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 6 Stücke:
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6+11.91 EUR
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IXTK200N10P IXTK200N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF918B7B48D05E27&compId=IXTK200N10P-DTE.pdf?ci_sign=0721e0c52bca576f300d138b8a4cdb5a5b21794d Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 200A; 800W; TO264
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 800W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
auf Bestellung 19 Stücke:
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6+13.11 EUR
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IXFN200N10P IXFN200N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C502DE4C338BF&compId=IXFN200N10P.pdf?ci_sign=8686db8775848651270ac3567ddd22e15cce1c0c description Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 400A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Pulsed drain current: 400A
Power dissipation: 680W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 7.5mΩ
Gate charge: 235nC
Kind of channel: enhancement
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 150ns
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IXTN200N10T IXTN200N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF620111CC99820&compId=IXTN200N10T.pdf?ci_sign=47e3508a6a84eac76a19a547dda3173382c5c6bf Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 500A
Technology: TrenchMV™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Pulsed drain current: 500A
Power dissipation: 550W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 5.5mΩ
Gate charge: 152nC
Kind of channel: enhancement
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 76ns
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IXTH75N10L2 IXTH75N10L2 IXYS IXT_75N10L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 100V; 75A; 400W; 180ns
Type of transistor: N-MOSFET
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 400W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: THT
Gate charge: 215nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Produkt ist nicht verfügbar
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IXFT400N075T2 IXFT400N075T2 IXYS IXFH(T)400N075T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 400A; 1000W; TO268; 77ns
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 420nC
Reverse recovery time: 77ns
On-state resistance: 2.3mΩ
Power dissipation: 1kW
Drain current: 400A
Drain-source voltage: 75V
Kind of package: tube
Case: TO268
Produkt ist nicht verfügbar
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DPG60B600LB-TRR IXYS Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 60A; Ifsm: 250A
Technology: HiPerFRED™
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Case: SMPD-B
Electrical mounting: SMT
Max. forward voltage: 2.21V
Load current: 60A
Max. forward impulse current: 250A
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
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DPG60B600LB-TUB IXYS Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 60A; Ifsm: 250A
Technology: HiPerFRED™
Kind of package: tube
Type of bridge rectifier: single-phase
Case: SMPD-B
Electrical mounting: SMT
Max. forward voltage: 2.21V
Load current: 60A
Max. forward impulse current: 250A
Max. off-state voltage: 0.6kV
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IXTP12N70X2 IXTP12N70X2 IXYS ixty2n65x2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; Idm: 24A; 180W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 24A
Gate charge: 19nC
Power dissipation: 180W
auf Bestellung 9 Stücke:
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9+7.95 EUR
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IXTH12N70X2 IXTH12N70X2 IXYS IXTH12N70X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; 180W; TO247-3; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 270ns
Gate charge: 19nC
Power dissipation: 180W
Features of semiconductor devices: ultra junction x-class
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IXTP12N70X2M IXTP12N70X2M IXYS ixty2n65x2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; Idm: 24A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 24A
Gate charge: 19nC
Power dissipation: 40W
Produkt ist nicht verfügbar
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IXFH50N85X IXFH50N85X IXYS IXF_50N85X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 50A; 890W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 50A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 218ns
Gate-source voltage: ±30V
Technology: HiPerFET™; X-Class
Produkt ist nicht verfügbar
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IXFK50N85X IXFK50N85X IXYS IXF_50N85X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO264; 218ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 50A
Power dissipation: 890W
Case: TO264
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 218ns
Produkt ist nicht verfügbar
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LF21844NTR LF21844NTR IXYS LF21844NTR.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; -2.3÷1.9A
Operating temperature: -40...125°C
Case: SO14
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Mounting: SMD
Output current: -2.3...1.9A
Number of channels: 2
Supply voltage: 10...20V
Voltage class: 600V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IXFX220N17T2 IXFX220N17T2 IXYS IXFK(X)220N17T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 170V; 220A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 170V
Drain current: 220A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 14 Stücke:
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5+14.84 EUR
6+13.21 EUR
10+12.26 EUR
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LCA220 LCA220 IXYS LCA220.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 120mA; max.250VAC
Case: DIP8
On-state resistance: 20Ω
Mounting: THT
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 120mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Kind of output: MOSFET
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPDT
Operating temperature: -40...85°C
auf Bestellung 87 Stücke:
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10+7.18 EUR
13+5.83 EUR
50+5.12 EUR
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DSA50C100HB DSA50C100HB IXYS DSA50C100HB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 25Ax2; TO247-3; Ufmax: 0.72V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 25A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.72V
Max. forward impulse current: 0.44kA
Power dissipation: 160W
Kind of package: tube
auf Bestellung 97 Stücke:
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16+4.52 EUR
18+4.08 EUR
20+3.6 EUR
30+3.29 EUR
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DSA30C100HB DSA30C100HB IXYS DSA30C100HB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO247-3; Ufmax: 0.72V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.72V
Max. forward impulse current: 340A
Power dissipation: 85W
Kind of package: tube
auf Bestellung 53 Stücke:
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22+3.39 EUR
24+3.07 EUR
27+2.72 EUR
30+2.47 EUR
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IXTP62N15P IXTP62N15P IXYS IXTA62N15P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 62A; 350W; TO220AB
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: PolarHT™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 62A
Gate charge: 70nC
Reverse recovery time: 150ns
On-state resistance: 40mΩ
Power dissipation: 350W
Gate-source voltage: ±20V
auf Bestellung 261 Stücke:
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14+5.16 EUR
22+3.35 EUR
50+3.22 EUR
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IXTK180N15P IXTK180N15P IXYS IXTK180N15P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 180A; 800W; TO264
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 180A
Power dissipation: 800W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
auf Bestellung 144 Stücke:
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5+14.83 EUR
10+13.48 EUR
25+13.38 EUR
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IXTA15P15T IXTA15P15T IXYS IXT_15P15T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 116ns
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IXTY15P15T IXTY15P15T IXYS IXT_15P15T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 116ns
Produkt ist nicht verfügbar
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IXTQ96N15P IXTQ96N15P IXYS IXTQ96N15P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 96A; 480W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 96A
Power dissipation: 480W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
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IXTA62N15P IXTA62N15P IXYS IXTA62N15P-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 62A; 350W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 62A
Power dissipation: 350W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
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IXTQ62N15P IXTQ62N15P IXYS IXTA62N15P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 62A; 350W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 62A
Power dissipation: 350W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
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IXTR62N15P IXTR62N15P IXYS IXTR62N15P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 36A; 150W; ISOPLUS247™; 150ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 36A
Power dissipation: 150W
Case: ISOPLUS247™
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Features of semiconductor devices: standard power mosfet
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IXTT96N15P IXTT96N15P IXYS IXTQ96N15P-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 96A; 480W; TO268
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 96A
Power dissipation: 480W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
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IXTA44P15T IXTA44P15T IXYS IXT_44P15T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -44A; 298W; TO263
Case: TO263
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -44A
Gate charge: 175nC
Reverse recovery time: 140ns
On-state resistance: 65mΩ
Power dissipation: 298W
Gate-source voltage: ±15V
auf Bestellung 63 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.29 EUR
12+6.13 EUR
13+5.55 EUR
50+4.78 EUR
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IXTP44P15T IXTP44P15T IXYS IXT_44P15T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -44A; 298W; 140ns
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -44A
Gate charge: 175nC
Reverse recovery time: 140ns
On-state resistance: 65mΩ
Power dissipation: 298W
Gate-source voltage: ±15V
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IXTH44P15T IXTH44P15T IXYS IXT_44P15T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -44A; 298W; 140ns
Case: TO247-3
Mounting: THT
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -44A
Gate charge: 175nC
Reverse recovery time: 140ns
On-state resistance: 65mΩ
Power dissipation: 298W
Gate-source voltage: ±15V
auf Bestellung 304 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.09 EUR
9+8.02 EUR
12+6.46 EUR
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CLA16E800PN CLA16E800PN IXYS CLA16E800PN.pdf Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 16A; 10A; Igt: 50mA; TO220FP; THT; tube
Mounting: THT
Type of thyristor: thyristor
Kind of package: tube
Gate current: 50mA
Load current: 10A
Max. load current: 16A
Max. forward impulse current: 195A
Max. off-state voltage: 0.8kV
Case: TO220FP
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5+14.3 EUR
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PLA160S PLA160S IXYS PLA160.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.8÷2.8VDC; Icntrl max: 50mA
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-on time: 50µs
Turn-off time: 50µs
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 50mA
Control current max.: 50mA
Control voltage: 1.8...2.8V DC
On-state resistance: 100Ω
Switched voltage: max. 300V AC; max. 300V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Case: DIP6
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PLA160STR IXYS PLA160.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.8÷2.8VDC; Icntrl max: 50mA
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-on time: 50µs
Turn-off time: 50µs
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 50mA
Control current max.: 50mA
Control voltage: 1.8...2.8V DC
On-state resistance: 100Ω
Switched voltage: max. 300V AC; max. 300V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Case: DIP6
Produkt ist nicht verfügbar
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MMIX1F132N50P3
+1
 		MMIX1F132N50P3 IXYS littelfuse-discrete-mosfets-mmix1f132n50p3-datasheet?assetguid=78cb4333-d3a9-496a-a626-6ed7394c5316 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 63A; Idm: 330A; 520W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 63A
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 43mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 267nC
Reverse recovery time: 250ns
Pulsed drain current: 330A
Power dissipation: 520W
Technology: HiPerFET™; Polar3™
auf Bestellung 20 Stücke:
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IXFN132N50P3 IXFN132N50P3 IXYS IXFN132N50P3.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 112A; SOT227B; screw; Idm: 330A
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 112A
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 39mΩ
Kind of channel: enhancement
Semiconductor structure: single transistor
Gate charge: 250nC
Reverse recovery time: 250ns
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Pulsed drain current: 330A
Power dissipation: 1.5kW
Technology: HiPerFET™; Polar™
auf Bestellung 40 Stücke:
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2+49.34 EUR
5+46.3 EUR
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IXFB132N50P3 IXFB132N50P3 IXYS IXFB132N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 132A; 1890W; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 132A
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 39mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 267nC
Reverse recovery time: 250ns
Power dissipation: 1890W
Technology: HiPerFET™; Polar3™
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IXFL132N50P3 IXFL132N50P3 IXYS IXFL132N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 63A; 520W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 63A
Case: ISOPLUS264™
On-state resistance: 43mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 250nC
Power dissipation: 520W
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IXTY01N100 IXTY01N100 IXYS IXTU(Y)01N100.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.1A
Power dissipation: 25W
Case: TO252
On-state resistance: 80Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
auf Bestellung 350 Stücke:
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31+2.33 EUR
35+2.06 EUR
39+1.86 EUR
70+1.82 EUR
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IXTP32P20T IXTP32P20T IXYS IXT_32P20T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -32A; 300W; 190ns
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Case: TO220AB
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -32A
Reverse recovery time: 190ns
Gate charge: 185nC
On-state resistance: 0.13Ω
Gate-source voltage: ±15V
Power dissipation: 300W
auf Bestellung 300 Stücke:
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IXTP32P05T IXTP32P05T IXYS IXT_32P05T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -32A; 83W; TO220AB
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Case: TO220AB
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -32A
Reverse recovery time: 26ns
Gate charge: 46nC
On-state resistance: 39mΩ
Gate-source voltage: ±15V
Power dissipation: 83W
auf Bestellung 14 Stücke:
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14+5.11 EUR
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IXFP30N25X3M IXFP30N25X3M IXYS IXFP30N25X3M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 36W; TO220FP; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 82ns
Features of semiconductor devices: ultra junction x-class
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IXFA30N25X3 IXFA30N25X3 IXYS IXFA(P,Y)30N25X3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO263; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 170W
Case: TO263
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 82ns
Features of semiconductor devices: ultra junction x-class
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IXTH1N450HV IXTH1N450HV IXYS IXTH(T)1N450HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1A; 520W; TO247-3; 1.75us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 1A
Power dissipation: 520W
Case: TO247-3
On-state resistance: 80Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.75µs
Gate charge: 46nC
auf Bestellung 28 Stücke:
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2+44.14 EUR
5+43.6 EUR
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MCMA110P1600TA IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 110A; Ifmax: 170A; TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 110A
Max. load current: 170A
Case: TO240AA
Max. forward voltage: 1.57V
Max. forward impulse current: 1.9kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXGH10N170A IXGH10N170A IXYS IXG_10N170A.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 29nC
Turn-on time: 107ns
Turn-off time: 240ns
Collector current: 5A
Pulsed collector current: 20A
Gate-emitter voltage: ±20V
Power dissipation: 140W
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Technology: NPT
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IXGH10N170 IXGH10N170 IXYS IXGH(t)10N170.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 10A; 110W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 32nC
Turn-on time: 0.3µs
Turn-off time: 630ns
Collector current: 10A
Pulsed collector current: 70A
Gate-emitter voltage: ±20V
Power dissipation: 110W
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Technology: NPT
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LF2103NTR LF2103NTR IXYS LF2103NTR.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 600V
Produkt ist nicht verfügbar
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CPC1563G CPC1563G IXYS CPC1563.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
Type of relay: solid state
Max. operating current: 120mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Turn-off time: 2ms
Turn-on time: 2ms
Control current max.: 50mA
On-state resistance: 35Ω
Insulation voltage: 3.75kV
Case: DIP6
Mounting: THT
auf Bestellung 338 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.35 EUR
50+3.5 EUR
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DSB20C60PN DSB20C60PN IXYS DSB20C60PN.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220FP; Ufmax: 0.62V
Type of diode: Schottky rectifying
Case: TO220FP
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.62V
Max. forward impulse current: 0.24kA
Kind of package: tube
Power dissipation: 30W
auf Bestellung 399 Stücke:
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136+0.53 EUR
143+0.5 EUR
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DSA20C60PN DSA20C60PN IXYS DSA20C60PN.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220FP; Ufmax: 0.7V
Type of diode: Schottky rectifying
Case: TO220FP
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.7V
Max. forward impulse current: 0.24kA
Kind of package: tube
Power dissipation: 35W
auf Bestellung 151 Stücke:
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59+1.22 EUR
65+1.1 EUR
73+0.99 EUR
81+0.89 EUR
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DSA240X150NA pVersion=0046&contRep=ZT&docId=005056AB82531EE991AF5C2EF0B738BF&compId=DSA240X150NA.pdf?ci_sign=0270766f6ee4cb1d8bd81ef7f4fa0462d6851a0d
DSA240X150NA
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 150V; If: 120Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 150V
Load current: 120A x2
Case: SOT227B
Max. forward voltage: 0.85V
Max. forward impulse current: 1.6kA
Electrical mounting: screw
Max. load current: 120A
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Produkt ist nicht verfügbar
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MCD44-12IO1B pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFE07B6403440C4&compId=MCD44-12io1B.pdf?ci_sign=1b3aa2724d956d6eb5fa398b58d591e43dd7c413 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
MCD44-12IO1B
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 49A; TO240AA; Ufmax: 1.34V; bulk
Max. off-state voltage: 1.2kV
Load current: 49A
Max. forward impulse current: 1.15kA
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.34V
Gate current: 100/200mA
Threshold on-voltage: 0.85V
Max. load current: 77A
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+30.37 EUR
10+27.54 EUR
36+26.31 EUR
Mindestbestellmenge: 3
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MCD162-16io1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89FD6136CB9ABE143&compId=MCD162-16io1.pdf?ci_sign=0059e08e7eeb598895d2ad74edff6b821249c3b5 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
MCD162-16io1
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Max. off-state voltage: 1.6kV
Load current: 181A
Max. forward impulse current: 6kA
Case: Y4-M6
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.03V
Gate current: 150/200mA
Threshold on-voltage: 0.88V
Max. load current: 300A
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+76.96 EUR
6+72.13 EUR
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CPC1130N pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF20CC0C7&compId=CPC1130N.pdf?ci_sign=44150b4b94226c50a67f054d89a376cc555a5c6e
CPC1130N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Case: SOP4
On-state resistance: 30Ω
Turn-off time: 2ms
Turn-on time: 2ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Switched voltage: max. 350V AC; max. 350V DC
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+5.96 EUR
Mindestbestellmenge: 12
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IXFH6N120 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F945957227820&compId=IXFH6N120.pdf?ci_sign=8972d5a18a8270d253e814360323d28139e6664d
IXFH6N120
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 6A
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 56nC
Power dissipation: 300W
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.51 EUR
7+11.68 EUR
10+9.98 EUR
Mindestbestellmenge: 6
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IXFR16N120P IXFR16N120P.pdf
IXFR16N120P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; 230W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 9A
Power dissipation: 230W
Case: ISOPLUS247™
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+10.08 EUR
Mindestbestellmenge: 8
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MCMA400PD1600PTSF
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 400A; SimBus F; Ifsm: 10kA
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Case: SimBus F
Electrical mounting: Press-Fit; screw
Max. forward impulse current: 10kA
Load current: 400A
Max. off-state voltage: 1.6kV
Max. load current: 630A
Produkt ist nicht verfügbar
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CMA40E1600HR pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB55D25969240C4&compId=CMA40E1600HR.pdf?ci_sign=6f80664eaf21c47f718bd7fb65bbdc0aa472624d
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 63A; 40A; Igt: 50/80mA; ISO247™; THT; tube
Case: ISO247™
Mounting: THT
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50/80mA
Max. forward impulse current: 470A
Load current: 40A
Max. off-state voltage: 1.6kV
Max. load current: 63A
Produkt ist nicht verfügbar
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DSEC59-06BC DSE(A,C)-06BC.pdf
DSEC59-06BC
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 250A; ISOPLUS220™
Mounting: THT
Max. off-state voltage: 0.6kV
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Case: ISOPLUS220™
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 25ns
Max. forward voltage: 2.51V
Load current: 30A x2
Power dissipation: 135W
Max. forward impulse current: 250A
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.32 EUR
19+3.89 EUR
21+3.45 EUR
Mindestbestellmenge: 17
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PS1201 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F3300C7&compId=PS1201.pdf?ci_sign=0f613ed3e25b644f7c8a3385a41559216377d791
PS1201
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; 1-phase
Mounting: THT
Type of relay: solid state
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 400V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Case: SIP4
auf Bestellung 135 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.41 EUR
25+5.18 EUR
100+4.66 EUR
Mindestbestellmenge: 14
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IXTQ200N10T IXTH(Q)200N10T.pdf
IXTQ200N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO3P; 76ns
Case: TO3P
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 76ns
Gate charge: 152nC
On-state resistance: 5.5mΩ
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 550W
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+11.91 EUR
Mindestbestellmenge: 6
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IXTK200N10P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF918B7B48D05E27&compId=IXTK200N10P-DTE.pdf?ci_sign=0721e0c52bca576f300d138b8a4cdb5a5b21794d
IXTK200N10P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 200A; 800W; TO264
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 800W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.11 EUR
Mindestbestellmenge: 6
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IXFN200N10P description pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C502DE4C338BF&compId=IXFN200N10P.pdf?ci_sign=8686db8775848651270ac3567ddd22e15cce1c0c
IXFN200N10P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 400A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Pulsed drain current: 400A
Power dissipation: 680W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 7.5mΩ
Gate charge: 235nC
Kind of channel: enhancement
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
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IXTN200N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF620111CC99820&compId=IXTN200N10T.pdf?ci_sign=47e3508a6a84eac76a19a547dda3173382c5c6bf
IXTN200N10T
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 500A
Technology: TrenchMV™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Pulsed drain current: 500A
Power dissipation: 550W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 5.5mΩ
Gate charge: 152nC
Kind of channel: enhancement
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 76ns
Produkt ist nicht verfügbar
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IXTH75N10L2 IXT_75N10L2.pdf
IXTH75N10L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 100V; 75A; 400W; 180ns
Type of transistor: N-MOSFET
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 400W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: THT
Gate charge: 215nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Produkt ist nicht verfügbar
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IXFT400N075T2 IXFH(T)400N075T2.pdf
IXFT400N075T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 400A; 1000W; TO268; 77ns
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 420nC
Reverse recovery time: 77ns
On-state resistance: 2.3mΩ
Power dissipation: 1kW
Drain current: 400A
Drain-source voltage: 75V
Kind of package: tube
Case: TO268
Produkt ist nicht verfügbar
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DPG60B600LB-TRR
Hersteller: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 60A; Ifsm: 250A
Technology: HiPerFRED™
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Case: SMPD-B
Electrical mounting: SMT
Max. forward voltage: 2.21V
Load current: 60A
Max. forward impulse current: 250A
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
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DPG60B600LB-TUB
Hersteller: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 60A; Ifsm: 250A
Technology: HiPerFRED™
Kind of package: tube
Type of bridge rectifier: single-phase
Case: SMPD-B
Electrical mounting: SMT
Max. forward voltage: 2.21V
Load current: 60A
Max. forward impulse current: 250A
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
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IXTP12N70X2 ixty2n65x2.pdf
IXTP12N70X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; Idm: 24A; 180W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 24A
Gate charge: 19nC
Power dissipation: 180W
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+7.95 EUR
Mindestbestellmenge: 9
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IXTH12N70X2 IXTH12N70X2.pdf
IXTH12N70X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; 180W; TO247-3; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 270ns
Gate charge: 19nC
Power dissipation: 180W
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
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IXTP12N70X2M ixty2n65x2.pdf
IXTP12N70X2M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; Idm: 24A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 24A
Gate charge: 19nC
Power dissipation: 40W
Produkt ist nicht verfügbar
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IXFH50N85X IXF_50N85X.pdf
IXFH50N85X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 50A; 890W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 50A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 218ns
Gate-source voltage: ±30V
Technology: HiPerFET™; X-Class
Produkt ist nicht verfügbar
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IXFK50N85X IXF_50N85X.pdf
IXFK50N85X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO264; 218ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 50A
Power dissipation: 890W
Case: TO264
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 218ns
Produkt ist nicht verfügbar
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LF21844NTR LF21844NTR.pdf
LF21844NTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; -2.3÷1.9A
Operating temperature: -40...125°C
Case: SO14
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Mounting: SMD
Output current: -2.3...1.9A
Number of channels: 2
Supply voltage: 10...20V
Voltage class: 600V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IXFX220N17T2 IXFK(X)220N17T2.pdf
IXFX220N17T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 170V; 220A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 170V
Drain current: 220A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.84 EUR
6+13.21 EUR
10+12.26 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
LCA220 LCA220.pdf
LCA220
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 120mA; max.250VAC
Case: DIP8
On-state resistance: 20Ω
Mounting: THT
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 120mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Kind of output: MOSFET
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPDT
Operating temperature: -40...85°C
auf Bestellung 87 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.18 EUR
13+5.83 EUR
50+5.12 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
DSA50C100HB DSA50C100HB.pdf
DSA50C100HB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 25Ax2; TO247-3; Ufmax: 0.72V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 25A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.72V
Max. forward impulse current: 0.44kA
Power dissipation: 160W
Kind of package: tube
auf Bestellung 97 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.52 EUR
18+4.08 EUR
20+3.6 EUR
30+3.29 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
DSA30C100HB DSA30C100HB.pdf
DSA30C100HB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO247-3; Ufmax: 0.72V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.72V
Max. forward impulse current: 340A
Power dissipation: 85W
Kind of package: tube
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.39 EUR
24+3.07 EUR
27+2.72 EUR
30+2.47 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
IXTP62N15P IXTA62N15P-DTE.pdf
IXTP62N15P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 62A; 350W; TO220AB
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: PolarHT™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 62A
Gate charge: 70nC
Reverse recovery time: 150ns
On-state resistance: 40mΩ
Power dissipation: 350W
Gate-source voltage: ±20V
auf Bestellung 261 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.16 EUR
22+3.35 EUR
50+3.22 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IXTK180N15P IXTK180N15P-DTE.pdf
IXTK180N15P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 180A; 800W; TO264
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 180A
Power dissipation: 800W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
auf Bestellung 144 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.83 EUR
10+13.48 EUR
25+13.38 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXTA15P15T IXT_15P15T.pdf
IXTA15P15T
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 116ns
Produkt ist nicht verfügbar
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IXTY15P15T IXT_15P15T.pdf
IXTY15P15T
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 116ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTQ96N15P IXTQ96N15P-DTE.pdf
IXTQ96N15P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 96A; 480W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 96A
Power dissipation: 480W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
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IXTA62N15P IXTA62N15P-DTE.pdf
IXTA62N15P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 62A; 350W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 62A
Power dissipation: 350W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTQ62N15P IXTA62N15P-DTE.pdf
IXTQ62N15P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 62A; 350W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 62A
Power dissipation: 350W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
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IXTR62N15P IXTR62N15P.pdf
IXTR62N15P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 36A; 150W; ISOPLUS247™; 150ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 36A
Power dissipation: 150W
Case: ISOPLUS247™
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Features of semiconductor devices: standard power mosfet
Produkt ist nicht verfügbar
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IXTT96N15P IXTQ96N15P-DTE.pdf
IXTT96N15P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 96A; 480W; TO268
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 96A
Power dissipation: 480W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
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IXTA44P15T IXT_44P15T.pdf
IXTA44P15T
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -44A; 298W; TO263
Case: TO263
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -44A
Gate charge: 175nC
Reverse recovery time: 140ns
On-state resistance: 65mΩ
Power dissipation: 298W
Gate-source voltage: ±15V
auf Bestellung 63 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.29 EUR
12+6.13 EUR
13+5.55 EUR
50+4.78 EUR
Mindestbestellmenge: 10
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IXTP44P15T IXT_44P15T.pdf
IXTP44P15T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -44A; 298W; 140ns
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -44A
Gate charge: 175nC
Reverse recovery time: 140ns
On-state resistance: 65mΩ
Power dissipation: 298W
Gate-source voltage: ±15V
auf Bestellung 289 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.49 EUR
16+4.56 EUR
Mindestbestellmenge: 12
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IXTH44P15T IXT_44P15T.pdf
IXTH44P15T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -44A; 298W; 140ns
Case: TO247-3
Mounting: THT
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -44A
Gate charge: 175nC
Reverse recovery time: 140ns
On-state resistance: 65mΩ
Power dissipation: 298W
Gate-source voltage: ±15V
auf Bestellung 304 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.09 EUR
9+8.02 EUR
12+6.46 EUR
30+6.39 EUR
Mindestbestellmenge: 8
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CLA16E800PN CLA16E800PN.pdf
CLA16E800PN
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 16A; 10A; Igt: 50mA; TO220FP; THT; tube
Mounting: THT
Type of thyristor: thyristor
Kind of package: tube
Gate current: 50mA
Load current: 10A
Max. load current: 16A
Max. forward impulse current: 195A
Max. off-state voltage: 0.8kV
Case: TO220FP
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.3 EUR
Mindestbestellmenge: 5
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PLA160S PLA160.pdf
PLA160S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.8÷2.8VDC; Icntrl max: 50mA
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-on time: 50µs
Turn-off time: 50µs
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 50mA
Control current max.: 50mA
Control voltage: 1.8...2.8V DC
On-state resistance: 100Ω
Switched voltage: max. 300V AC; max. 300V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Case: DIP6
Produkt ist nicht verfügbar
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PLA160STR PLA160.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.8÷2.8VDC; Icntrl max: 50mA
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-on time: 50µs
Turn-off time: 50µs
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 50mA
Control current max.: 50mA
Control voltage: 1.8...2.8V DC
On-state resistance: 100Ω
Switched voltage: max. 300V AC; max. 300V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Case: DIP6
Produkt ist nicht verfügbar
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MMIX1F132N50P3 littelfuse-discrete-mosfets-mmix1f132n50p3-datasheet?assetguid=78cb4333-d3a9-496a-a626-6ed7394c5316
MMIX1F132N50P3
+1
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 63A; Idm: 330A; 520W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 63A
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 43mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 267nC
Reverse recovery time: 250ns
Pulsed drain current: 330A
Power dissipation: 520W
Technology: HiPerFET™; Polar3™
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+64.18 EUR
3+56.76 EUR
10+50.97 EUR
20+47.56 EUR
Mindestbestellmenge: 2
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IXFN132N50P3 IXFN132N50P3.pdf
IXFN132N50P3
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 112A; SOT227B; screw; Idm: 330A
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 112A
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 39mΩ
Kind of channel: enhancement
Semiconductor structure: single transistor
Gate charge: 250nC
Reverse recovery time: 250ns
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Pulsed drain current: 330A
Power dissipation: 1.5kW
Technology: HiPerFET™; Polar™
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+49.34 EUR
5+46.3 EUR
10+45.59 EUR
Mindestbestellmenge: 2
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IXFB132N50P3 IXFB132N50P3.pdf
IXFB132N50P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 132A; 1890W; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 132A
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 39mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 267nC
Reverse recovery time: 250ns
Power dissipation: 1890W
Technology: HiPerFET™; Polar3™
Produkt ist nicht verfügbar
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IXFL132N50P3 IXFL132N50P3.pdf
IXFL132N50P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 63A; 520W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 63A
Case: ISOPLUS264™
On-state resistance: 43mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 250nC
Power dissipation: 520W
Produkt ist nicht verfügbar
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IXTY01N100 IXTU(Y)01N100.pdf
IXTY01N100
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.1A
Power dissipation: 25W
Case: TO252
On-state resistance: 80Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
auf Bestellung 350 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.33 EUR
35+2.06 EUR
39+1.86 EUR
70+1.82 EUR
Mindestbestellmenge: 31
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IXTP32P20T IXT_32P20T.pdf
IXTP32P20T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -32A; 300W; 190ns
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Case: TO220AB
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -32A
Reverse recovery time: 190ns
Gate charge: 185nC
On-state resistance: 0.13Ω
Gate-source voltage: ±15V
Power dissipation: 300W
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.52 EUR
10+7.75 EUR
11+7.02 EUR
Mindestbestellmenge: 8
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IXTP32P05T IXT_32P05T.pdf
IXTP32P05T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -32A; 83W; TO220AB
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Case: TO220AB
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -32A
Reverse recovery time: 26ns
Gate charge: 46nC
On-state resistance: 39mΩ
Gate-source voltage: ±15V
Power dissipation: 83W
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.11 EUR
Mindestbestellmenge: 14
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IXFP30N25X3M IXFP30N25X3M.pdf
IXFP30N25X3M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 36W; TO220FP; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 82ns
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
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IXFA30N25X3 IXFA(P,Y)30N25X3.pdf
IXFA30N25X3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO263; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 170W
Case: TO263
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 82ns
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
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IXTH1N450HV IXTH(T)1N450HV.pdf
IXTH1N450HV
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1A; 520W; TO247-3; 1.75us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 1A
Power dissipation: 520W
Case: TO247-3
On-state resistance: 80Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.75µs
Gate charge: 46nC
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+44.14 EUR
5+43.6 EUR
Mindestbestellmenge: 2
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MCMA110P1600TA PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 110A; Ifmax: 170A; TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 110A
Max. load current: 170A
Case: TO240AA
Max. forward voltage: 1.57V
Max. forward impulse current: 1.9kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXGH10N170A IXG_10N170A.pdf
IXGH10N170A
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 29nC
Turn-on time: 107ns
Turn-off time: 240ns
Collector current: 5A
Pulsed collector current: 20A
Gate-emitter voltage: ±20V
Power dissipation: 140W
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Technology: NPT
Produkt ist nicht verfügbar
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IXGH10N170 IXGH(t)10N170.pdf
IXGH10N170
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 10A; 110W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 32nC
Turn-on time: 0.3µs
Turn-off time: 630ns
Collector current: 10A
Pulsed collector current: 70A
Gate-emitter voltage: ±20V
Power dissipation: 110W
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Technology: NPT
Produkt ist nicht verfügbar
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LF2103NTR LF2103NTR.pdf
LF2103NTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 600V
Produkt ist nicht verfügbar
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CPC1563G CPC1563.pdf
CPC1563G
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
Type of relay: solid state
Max. operating current: 120mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Turn-off time: 2ms
Turn-on time: 2ms
Control current max.: 50mA
On-state resistance: 35Ω
Insulation voltage: 3.75kV
Case: DIP6
Mounting: THT
auf Bestellung 338 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.35 EUR
50+3.5 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
DSB20C60PN DSB20C60PN.pdf
DSB20C60PN
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220FP; Ufmax: 0.62V
Type of diode: Schottky rectifying
Case: TO220FP
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.62V
Max. forward impulse current: 0.24kA
Kind of package: tube
Power dissipation: 30W
auf Bestellung 399 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
143+0.5 EUR
147+0.49 EUR
Mindestbestellmenge: 136
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DSA20C60PN DSA20C60PN.pdf
DSA20C60PN
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220FP; Ufmax: 0.7V
Type of diode: Schottky rectifying
Case: TO220FP
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.7V
Max. forward impulse current: 0.24kA
Kind of package: tube
Power dissipation: 35W
auf Bestellung 151 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.22 EUR
65+1.1 EUR
73+0.99 EUR
81+0.89 EUR
Mindestbestellmenge: 59
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