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IXGT6N170A IXGT6N170A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAE62EB13C77820&compId=IXGh(T)6N170A.pdf?ci_sign=e3be7b7321a119c55baa6fb6dbef9aed2b2b65e8 Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 3A; 75W; TO268; Features: high voltage
Case: TO268
Mounting: SMD
Kind of package: tube
Gate charge: 18.5nC
Turn-on time: 91ns
Turn-off time: 271ns
Power dissipation: 75W
Collector current: 3A
Pulsed collector current: 14A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.7kV
Technology: NPT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
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IXGT6N170AHV IXGT6N170AHV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAE68E13FD1F820&compId=IXGT6N170AHV.pdf?ci_sign=0ced16e3aeebf14e2af3ffb4ae4cc3c894f51d76 Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 3A; 75W; TO268HV
Case: TO268HV
Mounting: SMD
Kind of package: tube
Gate charge: 18.5nC
Turn-on time: 91ns
Turn-off time: 271ns
Power dissipation: 75W
Collector current: 3A
Pulsed collector current: 14A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.7kV
Technology: NPT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Produkt ist nicht verfügbar
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IXTA1N170DHV IXTA1N170DHV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDD145E54D5820&compId=IXTA(H)1N170DHV.pdf?ci_sign=28dde988f0d317d0dd347e6a30f2aceb1f0422d5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.7kV; 1A; 290W; TO263HV; 30ns
Case: TO263HV
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Drain current: 1A
Drain-source voltage: 1.7kV
Reverse recovery time: 30ns
On-state resistance: 16Ω
Power dissipation: 290W
Kind of channel: depletion
Type of transistor: N-MOSFET
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IXTH1N170DHV IXTH1N170DHV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDD145E54D5820&compId=IXTA(H)1N170DHV.pdf?ci_sign=28dde988f0d317d0dd347e6a30f2aceb1f0422d5 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.7kV; 1A; 290W; TO247HV; 30ns
Case: TO247HV
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain current: 1A
Drain-source voltage: 1.7kV
Reverse recovery time: 30ns
On-state resistance: 16Ω
Power dissipation: 290W
Kind of channel: depletion
Type of transistor: N-MOSFET
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IXBH42N170A IXBH42N170A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF8470C3B0F820&compId=IXBH(t)42N170A.pdf?ci_sign=73101f7c52db6aeeb6aa4472f2d3884735132435 Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 21A; 357W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 188nC
Turn-on time: 33ns
Turn-off time: 308ns
Power dissipation: 357W
Collector current: 21A
Pulsed collector current: 265A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Produkt ist nicht verfügbar
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IXBK75N170 IXBK75N170 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF110B4398918BF&compId=IXBK(X)75N170.pdf?ci_sign=b922e90d92cc76b2a480c32f8c12d775523c1cbc Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 75A; 1.04kW; TO264
Case: TO264
Mounting: THT
Kind of package: tube
Gate charge: 0.35µC
Turn-on time: 277ns
Turn-off time: 840ns
Power dissipation: 1.04kW
Collector current: 75A
Pulsed collector current: 580A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Type of transistor: IGBT
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IXyH100N65C3 IXyH100N65C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA9FE9B182D9820&compId=IXYH100N65C3.pdf?ci_sign=69e3af69d2cb14ebc6509d3947bbc7d28a48c48b Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 830W; TO247-3
Case: TO247-3
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Turn-on time: 62ns
Gate charge: 172nC
Turn-off time: 200ns
Gate-emitter voltage: ±20V
Power dissipation: 830W
Collector current: 100A
Pulsed collector current: 420A
Collector-emitter voltage: 650V
auf Bestellung 282 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.33 EUR
7+11.41 EUR
10+10.88 EUR
30+10.61 EUR
Mindestbestellmenge: 6
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IXGN72N60C3H1 IXGN72N60C3H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2FA2829F3B820&compId=IXGN72N60C3H1.pdf?ci_sign=0baf9eb2a151751236ca0716618ffe401a388905 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 52A; SOT227B; 360W
Power dissipation: 360W
Case: SOT227B
Technology: GenX3™; PT
Type of semiconductor module: IGBT
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 52A
Pulsed collector current: 360A
Max. off-state voltage: 0.6kV
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IXGX72N60C3H1 IXGX72N60C3H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB0E62FFAC9820&compId=IXGX72N60C3H1.pdf?ci_sign=cac8206ee321d338a1e80ece5d0032b45e4a91ee Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; PLUS247™
Type of transistor: IGBT
Power dissipation: 540W
Case: PLUS247™
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Collector-emitter voltage: 600V
Technology: GenX3™; PT
Turn-on time: 62ns
Turn-off time: 244ns
Gate-emitter voltage: ±20V
Collector current: 72A
Pulsed collector current: 360A
Produkt ist nicht verfügbar
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IXFP4N100P IXFP4N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D504A4ED455820&compId=IXFA(P)4N100P.pdf?ci_sign=3bc1928e6ac9c7c21646c91f222f882230a1532c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Power dissipation: 150W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 26nC
auf Bestellung 119 Stücke:
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18+4.18 EUR
20+3.76 EUR
22+3.32 EUR
50+3 EUR
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IXDI614CI IXDI614CI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-off time: 130ns
Turn-on time: 140ns
auf Bestellung 1266 Stücke:
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15+4.92 EUR
16+4.66 EUR
17+4.29 EUR
Mindestbestellmenge: 15
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IXDN614CI IXDN614CI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
auf Bestellung 728 Stücke:
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13+5.59 EUR
17+4.28 EUR
25+4.2 EUR
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IXDD614CI IXDD614CI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
auf Bestellung 785 Stücke:
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15+5 EUR
18+4.02 EUR
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IXDN609CI IXDN609CI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 1061 Stücke:
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20+3.7 EUR
26+2.8 EUR
27+2.69 EUR
Mindestbestellmenge: 20
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IXDD609CI IXDD609CI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Case: TO220-5
Mounting: THT
Kind of package: tube
Operating temperature: -40...125°C
Output current: -9...9A
Turn-off time: 105ns
Turn-on time: 115ns
Number of channels: 1
Supply voltage: 4.5...35V
Kind of integrated circuit: gate driver; low-side
Kind of output: non-inverting
auf Bestellung 712 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.65 EUR
27+2.73 EUR
28+2.59 EUR
100+2.55 EUR
250+2.49 EUR
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IXDI609CI IXDI609CI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Case: TO220-5
Mounting: THT
Kind of package: tube
Operating temperature: -40...125°C
Output current: -9...9A
Turn-off time: 105ns
Turn-on time: 115ns
Number of channels: 1
Supply voltage: 4.5...35V
Kind of integrated circuit: gate driver; low-side
Kind of output: inverting
auf Bestellung 790 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.02 EUR
24+3.02 EUR
25+2.92 EUR
50+2.8 EUR
Mindestbestellmenge: 18
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IXDN630MCI IXDN630MCI IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 9÷35V
Kind of package: tube
Operating temperature: -40...125°C
Output current: -30...30A
Turn-off time: 135ns
Turn-on time: 135ns
Number of channels: 1
Supply voltage: 9...35V
Case: TO220-5
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Mounting: THT
Kind of output: non-inverting
auf Bestellung 110 Stücke:
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9+8.15 EUR
10+7.82 EUR
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IXDI630MCI IXDI630MCI IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Kind of package: tube
Operating temperature: -40...125°C
Output current: -30...30A
Turn-off time: 135ns
Turn-on time: 135ns
Number of channels: 1
Supply voltage: 12.5...35V
Case: TO220-5
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Mounting: THT
Kind of output: inverting
auf Bestellung 207 Stücke:
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7+10.98 EUR
10+7.49 EUR
50+7.14 EUR
Mindestbestellmenge: 7
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VGB0124AY7A VGB0124AY7A IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA996B22C9C8960C7&compId=VGB%2C%20F.pdf?ci_sign=950fe8d4ce9285f8e3019d516bbc23c267185ed8 Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: braking rectifier assemblies; Urmax: 1.4kV
Type of bridge rectifier: braking rectifier assemblies
Max. off-state voltage: 1.4kV
Load current: 1A
Max. forward impulse current: 60A
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Case: VG-A
auf Bestellung 25 Stücke:
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1+123.04 EUR
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VVZB135-16IOXT IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA95FA6ACC5A25A0C4&compId=VVZB135-16IOXT.pdf?ci_sign=0abee15b91779cab8eaf3183e5ed18c6123f9f86 Category: IGBT modules
Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 1.2kV
Mechanical mounting: screw
Technology: X2PT
Gate-emitter voltage: ±20V
Collector current: 84A
Pulsed collector current: 225A
Power dissipation: 390W
Case: E2-Pack
Max. off-state voltage: 1.2kV
Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor
Semiconductor structure: diode/thyristor/IGBT
Type of semiconductor module: IGBT
Application: Inverter
Electrical mounting: Press-in PCB
Produkt ist nicht verfügbar
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VVZB120-16ioX IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8797C79C486320C4&compId=VVZB120-16ioX.pdf?ci_sign=3fc38b78861f9ddf7f4d6f88bb572053b6fc5921 Category: IGBT modules
Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 1.2kV
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 180A
Pulsed collector current: 300A
Case: V2-Pack
Max. off-state voltage: 1.2kV
Topology: 3-phase diode-thyristor bridge; boost chopper
Semiconductor structure: diode/thyristor/IGBT
Type of semiconductor module: IGBT
Application: Inverter
Electrical mounting: Press-in PCB
Produkt ist nicht verfügbar
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VVZB170-16ioXT IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA95FA6E0C8264E0C4&compId=VVZB170-16IOXT.pdf?ci_sign=42714146d8e9e276eff660612979f982ac45948e Category: IGBT modules
Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 1.2kV
Mechanical mounting: screw
Technology: X2PT
Gate-emitter voltage: ±20V
Collector current: 140A
Pulsed collector current: 300A
Power dissipation: 500W
Case: E2-Pack
Max. off-state voltage: 1.2kV
Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor
Semiconductor structure: diode/thyristor/IGBT
Type of semiconductor module: IGBT
Application: Inverter
Electrical mounting: Press-in PCB
Produkt ist nicht verfügbar
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LF2388BTR LF2388BTR IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91F27C32DDFA40CE&compId=LF2388BTR.pdf?ci_sign=0ffe7b00e916e274b61faec0bc85889558573824 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO20
Output current: -750...420mA
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 6
Voltage class: 600V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DSEC120-12AK DSEC120-12AK IXYS Littelfuse-Power-Semiconductors-DSEC120-12AK-Datasheet?assetguid=6d7c4a83-944f-41eb-8b81-8f646ced8d79 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60Ax2; tube; Ifsm: 500A; TO264; 330W
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Type of diode: rectifying
Kind of package: tube
Case: TO264
Mounting: THT
Reverse recovery time: 40ns
Max. forward voltage: 2.66V
Load current: 60A x2
Max. forward impulse current: 0.5kA
Max. off-state voltage: 1.2kV
Power dissipation: 330W
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
4+19.08 EUR
10+16.9 EUR
Mindestbestellmenge: 4
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PLA150STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A99160C7&compId=PLA150.pdf?ci_sign=5c7b2ceba8611d1013361ab1d5aeffd0d8ee6558 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.250VAC
Type of relay: solid state
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Turn-on time: 2.5ms
Control current max.: 50mA
On-state resistance: 7Ω
Case: DIP6
Mounting: SMT
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Kind of output: MOSFET
Turn-off time: 0.5ms
Produkt ist nicht verfügbar
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IXFK240N25X3 IXFK240N25X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCD7F081F39820&compId=IXFK(X)240N25X3.pdf?ci_sign=505f1373677b8d12c73e55874fb205a4c2db2269 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 240A; 1250W; TO264; 177ns
Kind of channel: enhancement
Mounting: THT
Case: TO264
Type of transistor: N-MOSFET
Features of semiconductor devices: ultra junction x-class
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 177ns
Gate charge: 345nC
On-state resistance: 5mΩ
Drain current: 240A
Power dissipation: 1.25kW
Drain-source voltage: 250V
auf Bestellung 12 Stücke:
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3+31.69 EUR
10+30.47 EUR
Mindestbestellmenge: 3
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LCB710 LCB710 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4942FD86A20C7&compId=LCB710.pdf?ci_sign=fec8a497ee6cfd935b3a12e0a9dcee5ec779b451 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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LCB710S LCB710S IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A5000E274458BF&compId=lcb710.pdf?ci_sign=6afcc9f1a3caec493c4d282148d45c8cc634e4bc Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Kind of output: MOSFET
auf Bestellung 8 Stücke:
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8+9.44 EUR
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LCB710STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4942FD86A20C7&compId=LCB710.pdf?ci_sign=fec8a497ee6cfd935b3a12e0a9dcee5ec779b451 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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IXXK100N60B3H1 IXXK100N60B3H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB5E9736E85820&compId=IXXK(X)100N60B3H1.pdf?ci_sign=d57f3e839e99034f93d7db6ec23554b65561ec01 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 695W; TO264
Type of transistor: IGBT
Power dissipation: 695W
Case: TO264
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 370A
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Turn-on time: 92ns
Turn-off time: 350ns
Produkt ist nicht verfügbar
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IXXX100N60B3H1 IXXX100N60B3H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB5E9736E85820&compId=IXXK(X)100N60B3H1.pdf?ci_sign=d57f3e839e99034f93d7db6ec23554b65561ec01 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 695W; PLUS247™
Type of transistor: IGBT
Power dissipation: 695W
Case: PLUS247™
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 370A
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Turn-on time: 92ns
Turn-off time: 350ns
Produkt ist nicht verfügbar
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IXXR100N60B3H1 IXXR100N60B3H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB60098651D820&compId=IXXR100N60B3H1.pdf?ci_sign=8aa4ff178fcc8ea93120f8855fed717e6de47bcb Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 400W; PLUS247™
Type of transistor: IGBT
Power dissipation: 400W
Case: PLUS247™
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 440A
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Turn-on time: 92ns
Turn-off time: 350ns
Produkt ist nicht verfügbar
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IXYH100N65A3 IXYH100N65A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA9F637BE63D820&compId=IXYH100N65A3.pdf?ci_sign=9261f3ba6bf1e3a19a046602d5f86b4a1c536e72 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 470W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 470W
Case: TO247-3
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Turn-on time: 87ns
Turn-off time: 459ns
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 480A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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DPG10I300PA DPG10I300PA IXYS DPG10I300PA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10A; tube; Ifsm: 140A; TO220AC; 65W
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220AC
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 35ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 1.27V
Load current: 10A
Power dissipation: 65W
Max. forward impulse current: 140A
Max. off-state voltage: 300V
auf Bestellung 28 Stücke:
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28+2.56 EUR
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IXFH74N20P IXFH74N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CA5AEB5963298BF&compId=IXF(V%2CH)74N20P(S).pdf?ci_sign=0f089991e74ed191755334448918e2eb4cb172ba Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 74A; 480W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 74A
Power dissipation: 480W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; PolarHT™
Reverse recovery time: 200ns
auf Bestellung 128 Stücke:
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9+8.09 EUR
30+5.76 EUR
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IXBK55N300 IXBK55N300 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DB0714D9906B820&compId=IXBK55N300.pdf?ci_sign=f45794269312c1c9f7aac4b8d33880683a0ee457 Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 55A; 625W; TO264
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Mounting: THT
Case: TO264
Gate charge: 335nC
Turn-off time: 475ns
Turn-on time: 637ns
Gate-emitter voltage: ±20V
Collector current: 55A
Pulsed collector current: 600A
Power dissipation: 625W
Collector-emitter voltage: 3kV
Kind of package: tube
Technology: BiMOSFET™
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1+114.17 EUR
10+111.54 EUR
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IXFX100N65X2 IXFX100N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389E5CCA0EF7820&compId=IXFK(X)100N65X2.pdf?ci_sign=943e818235cb436b72c8d4fa8bbbd2fba5457b4b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 100A; 1040W; PLUS247™; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 100A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Features of semiconductor devices: ultra junction x-class
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IXFN100N65X2 IXFN100N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C84A066A758BF&compId=IXFN100N65X2.pdf?ci_sign=3208a95ccb272ce6be2f874277a28f7de43f3b3d Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 78A; SOT227B; screw; Idm: 200A
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 78A
Pulsed drain current: 200A
Power dissipation: 595W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 30mΩ
Gate charge: 183nC
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
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IXYN100N65B3D1 IXYN100N65B3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F336953A721820&compId=IXYN100N65B3D1.pdf?ci_sign=b4e0f477452c65189195015b983e3ffa516ad384 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 100A; SOT227B
Technology: GenX3™; XPT™
Power dissipation: 600W
Case: SOT227B
Semiconductor structure: single transistor
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Electrical mounting: screw
Collector current: 100A
Type of semiconductor module: IGBT
Pulsed collector current: 490A
Max. off-state voltage: 650V
Produkt ist nicht verfügbar
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IXYN100N65C3H1 IXYN100N65C3H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F339C051471820&compId=IXYN100N65C3H1.pdf?ci_sign=3b64951da6ee7c9d61858697f88f632ac9b3257e Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 90A; SOT227B; 600W
Technology: GenX3™; XPT™
Power dissipation: 600W
Case: SOT227B
Semiconductor structure: single transistor
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Electrical mounting: screw
Collector current: 90A
Type of semiconductor module: IGBT
Pulsed collector current: 420A
Max. off-state voltage: 650V
Produkt ist nicht verfügbar
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IXTP02N120P IXTP02N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389CC0EF702F820&compId=IXTP(Y)02N120P.pdf?ci_sign=e633bba2e601c335d99225d6beef7c2a93141ab1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.2A; 33W; TO220AB; 1.6us
Type of transistor: N-MOSFET
Power dissipation: 33W
Case: TO220AB
Mounting: THT
Kind of package: tube
On-state resistance: 75Ω
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Reverse recovery time: 1.6µs
Drain current: 0.2A
Produkt ist nicht verfügbar
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IXTY02N120P IXTY02N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389CC0EF702F820&compId=IXTP(Y)02N120P.pdf?ci_sign=e633bba2e601c335d99225d6beef7c2a93141ab1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.2A; 33W; TO252; 1.6us
Type of transistor: N-MOSFET
Power dissipation: 33W
Case: TO252
Mounting: SMD
Kind of package: tube
On-state resistance: 75Ω
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Reverse recovery time: 1.6µs
Drain current: 0.2A
Produkt ist nicht verfügbar
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IXGK320N60B3 IXGK320N60B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99CE3FAC0877D7820&compId=IXGK(x)320N60B3.pdf?ci_sign=7f3fb659fb9326cceb8b246edbd061c9df14d441 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 320A; 1.7kW; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 320A
Power dissipation: 1.7kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Mounting: THT
Gate charge: 585nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 595ns
Produkt ist nicht verfügbar
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MMIX1G320N60B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99CE3FCA36BD8D820&compId=MMIX1G320N60B3.pdf?ci_sign=e89ac637af771fafceeee892fa2d83d851e397a1 Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 600V; 180A; 1kW; SMPD
Type of transistor: IGBT
Technology: BiMOSFET™; GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 180A
Power dissipation: 1kW
Case: SMPD
Gate-emitter voltage: ±20V
Pulsed collector current: 1kA
Mounting: SMD
Gate charge: 585nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 595ns
Produkt ist nicht verfügbar
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CPC1001NTR CPC1001NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4918F5536A0C7&compId=CPC1001N.pdf?ci_sign=fed221f1ce6717152996c4670d54d917b333a1f1 Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 1.5kV; SOP4; -40÷85°C
Switched voltage: max. 30V DC
Operating temperature: -40...85°C
Insulation voltage: 1.5kV
Kind of output: transistor
Type of optocoupler: optocoupler
Mounting: SMD
Case: SOP4
Turn-on time: 1µs
Turn-off time: 30µs
Control current max.: 5mA
Max. operating current: 0.1A
Number of channels: 1
CTR@If: 100-800%@0.2mA
Produkt ist nicht verfügbar
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XBB170 XBB170 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F3A00C7&compId=XBB170.pdf?ci_sign=00fa93de2696ad932ea5cc4d0329771fb18f0a2c Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 250 Stücke:
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12+5.99 EUR
14+5.23 EUR
250+4.43 EUR
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XBB170P XBB170P IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F3A00C7&compId=XBB170.pdf?ci_sign=00fa93de2696ad932ea5cc4d0329771fb18f0a2c Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 248 Stücke:
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9+8.59 EUR
50+5.63 EUR
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CPC1333GR CPC1333GR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232003FE0C7&compId=CPC1333.pdf?ci_sign=dd21761c011cbe67e43ba1e240dd7b0022006e20 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: DIP4
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 2ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 231 Stücke:
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29+2.52 EUR
36+1.99 EUR
100+1.74 EUR
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PLB171P PLB171P IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7AE0C7&compId=PLB171.pdf?ci_sign=9fe800a18959fd9115c3f387e4c1692996f299da Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 80mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Max. operating current: 80mA
Switched voltage: max. 800V AC; max. 800V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 90Ω
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Insulation voltage: 5kV
Kind of output: MOSFET
auf Bestellung 57 Stücke:
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10+7.29 EUR
13+5.81 EUR
50+5.29 EUR
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LBB110 LBB110 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FEFA20C7&compId=LBB110.pdf?ci_sign=872eb5a8e73957397148ad4bb64f3a1a87d13845 description Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 109 Stücke:
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12+6.38 EUR
15+5.11 EUR
100+4.72 EUR
Mindestbestellmenge: 12
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IXTJ6N150 IXTJ6N150 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE88AEFA0A37288D3D1&compId=IXTJ6N150.pdf?ci_sign=75b3ac98eb9b8e916db94f48bf478deb2a432d0a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 125W; ISO247™; 1.5us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 3A
Power dissipation: 125W
Case: ISO247™
Gate-source voltage: ±30V
On-state resistance: 3.85Ω
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 1.5µs
Produkt ist nicht verfügbar
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IXYH40N90C3D1 IXYH40N90C3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAAB0C639A15820&compId=IXYH40N90C3D1.pdf?ci_sign=a9b420490784fb125d477b8ddf210fc5b67ef22e Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 40A; 500W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 40A
Power dissipation: 500W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Turn-on time: 81ns
Turn-off time: 237ns
auf Bestellung 84 Stücke:
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6+12 EUR
7+11.15 EUR
10+9.91 EUR
30+8.25 EUR
Mindestbestellmenge: 6
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IXTP102N15T IXTP102N15T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F12E1820&compId=IXTA(H%2CP%2CQ)102N15T.pdf?ci_sign=a7dd4f01d2a4226a8b0a38e27af5b16600fca392 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB; 97ns
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Gate charge: 87nC
Reverse recovery time: 97ns
On-state resistance: 18mΩ
Drain current: 102A
Drain-source voltage: 150V
Power dissipation: 455W
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CPC1330GR CPC1330GR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232003E60C7&compId=CPC1330.pdf?ci_sign=e830813f6059723aa9d1895d489a51cc31d0b4c7 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Manufacturer series: OptoMOS
Case: DIP4
Mounting: SMT
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 4.57x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 30Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 5kV
Relay variant: 1-phase; current source
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
4+17.88 EUR
Mindestbestellmenge: 4
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DSEI30-12A DSEI30-12A IXYS pVersion=0046&contRep=ZT&docId=E2916DEC5E36DDF19A99005056AB752F&compId=92722.pdf?ci_sign=990727ced795f1f61d5fc4ad016abc029ccb1a31 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 26A; tube; Ifsm: 200A; TO247-2; 138W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 26A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO247-2
Max. forward voltage: 2.2V
Power dissipation: 138W
Reverse recovery time: 40ns
Technology: FRED
auf Bestellung 293 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.52 EUR
17+4.23 EUR
Mindestbestellmenge: 11
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XS170STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A99B40C7&compId=XS170.pdf?ci_sign=ae49039dc50cc2f138787b27e98a97db254a896c Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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PAA127STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269EA0C7&compId=PAA127.pdf?ci_sign=174896c92fdeb4bc429c856e4386b7216ac0d235 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 200mA
Switched voltage: max. 280V AC; max. 280V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 500µs
Turn-off time: 0.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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LAA108STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339892260C7&compId=LAA108.pdf?ci_sign=b422f07330ccafc6349ee64d10cd1d1a446af717 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 300mA
Switched voltage: max. 100V AC; max. 100V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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LCA182STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49461977F00C7&compId=LCA182.pdf?ci_sign=aca7998c54fcdc195895ad687c7e30558222e1cf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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LCA712STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269000C7&compId=LCA712.pdf?ci_sign=884b90e7d5ff2ff132dd7a2dd6470ab1872c2430 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 350µs
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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IXGT6N170A pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAE62EB13C77820&compId=IXGh(T)6N170A.pdf?ci_sign=e3be7b7321a119c55baa6fb6dbef9aed2b2b65e8
IXGT6N170A
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 3A; 75W; TO268; Features: high voltage
Case: TO268
Mounting: SMD
Kind of package: tube
Gate charge: 18.5nC
Turn-on time: 91ns
Turn-off time: 271ns
Power dissipation: 75W
Collector current: 3A
Pulsed collector current: 14A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.7kV
Technology: NPT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Produkt ist nicht verfügbar
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IXGT6N170AHV pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAE68E13FD1F820&compId=IXGT6N170AHV.pdf?ci_sign=0ced16e3aeebf14e2af3ffb4ae4cc3c894f51d76
IXGT6N170AHV
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 3A; 75W; TO268HV
Case: TO268HV
Mounting: SMD
Kind of package: tube
Gate charge: 18.5nC
Turn-on time: 91ns
Turn-off time: 271ns
Power dissipation: 75W
Collector current: 3A
Pulsed collector current: 14A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.7kV
Technology: NPT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Produkt ist nicht verfügbar
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IXTA1N170DHV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDD145E54D5820&compId=IXTA(H)1N170DHV.pdf?ci_sign=28dde988f0d317d0dd347e6a30f2aceb1f0422d5
IXTA1N170DHV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.7kV; 1A; 290W; TO263HV; 30ns
Case: TO263HV
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Drain current: 1A
Drain-source voltage: 1.7kV
Reverse recovery time: 30ns
On-state resistance: 16Ω
Power dissipation: 290W
Kind of channel: depletion
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IXTH1N170DHV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDD145E54D5820&compId=IXTA(H)1N170DHV.pdf?ci_sign=28dde988f0d317d0dd347e6a30f2aceb1f0422d5
IXTH1N170DHV
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.7kV; 1A; 290W; TO247HV; 30ns
Case: TO247HV
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain current: 1A
Drain-source voltage: 1.7kV
Reverse recovery time: 30ns
On-state resistance: 16Ω
Power dissipation: 290W
Kind of channel: depletion
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IXBH42N170A pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF8470C3B0F820&compId=IXBH(t)42N170A.pdf?ci_sign=73101f7c52db6aeeb6aa4472f2d3884735132435
IXBH42N170A
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 21A; 357W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 188nC
Turn-on time: 33ns
Turn-off time: 308ns
Power dissipation: 357W
Collector current: 21A
Pulsed collector current: 265A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Produkt ist nicht verfügbar
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IXBK75N170 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF110B4398918BF&compId=IXBK(X)75N170.pdf?ci_sign=b922e90d92cc76b2a480c32f8c12d775523c1cbc
IXBK75N170
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 75A; 1.04kW; TO264
Case: TO264
Mounting: THT
Kind of package: tube
Gate charge: 0.35µC
Turn-on time: 277ns
Turn-off time: 840ns
Power dissipation: 1.04kW
Collector current: 75A
Pulsed collector current: 580A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Produkt ist nicht verfügbar
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IXyH100N65C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA9FE9B182D9820&compId=IXYH100N65C3.pdf?ci_sign=69e3af69d2cb14ebc6509d3947bbc7d28a48c48b
IXyH100N65C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 830W; TO247-3
Case: TO247-3
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Turn-on time: 62ns
Gate charge: 172nC
Turn-off time: 200ns
Gate-emitter voltage: ±20V
Power dissipation: 830W
Collector current: 100A
Pulsed collector current: 420A
Collector-emitter voltage: 650V
auf Bestellung 282 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.33 EUR
7+11.41 EUR
10+10.88 EUR
30+10.61 EUR
Mindestbestellmenge: 6
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IXGN72N60C3H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2FA2829F3B820&compId=IXGN72N60C3H1.pdf?ci_sign=0baf9eb2a151751236ca0716618ffe401a388905
IXGN72N60C3H1
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 52A; SOT227B; 360W
Power dissipation: 360W
Case: SOT227B
Technology: GenX3™; PT
Type of semiconductor module: IGBT
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 52A
Pulsed collector current: 360A
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
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IXGX72N60C3H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB0E62FFAC9820&compId=IXGX72N60C3H1.pdf?ci_sign=cac8206ee321d338a1e80ece5d0032b45e4a91ee
IXGX72N60C3H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; PLUS247™
Type of transistor: IGBT
Power dissipation: 540W
Case: PLUS247™
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Collector-emitter voltage: 600V
Technology: GenX3™; PT
Turn-on time: 62ns
Turn-off time: 244ns
Gate-emitter voltage: ±20V
Collector current: 72A
Pulsed collector current: 360A
Produkt ist nicht verfügbar
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IXFP4N100P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D504A4ED455820&compId=IXFA(P)4N100P.pdf?ci_sign=3bc1928e6ac9c7c21646c91f222f882230a1532c
IXFP4N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Power dissipation: 150W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 26nC
auf Bestellung 119 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.18 EUR
20+3.76 EUR
22+3.32 EUR
50+3 EUR
Mindestbestellmenge: 18
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IXDI614CI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d
IXDI614CI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-off time: 130ns
Turn-on time: 140ns
auf Bestellung 1266 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.92 EUR
16+4.66 EUR
17+4.29 EUR
Mindestbestellmenge: 15
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IXDN614CI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d
IXDN614CI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
auf Bestellung 728 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.59 EUR
17+4.28 EUR
25+4.2 EUR
Mindestbestellmenge: 13
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IXDD614CI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d
IXDD614CI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
auf Bestellung 785 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5 EUR
18+4.02 EUR
Mindestbestellmenge: 15
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IXDN609CI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6
IXDN609CI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 1061 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.7 EUR
26+2.8 EUR
27+2.69 EUR
Mindestbestellmenge: 20
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IXDD609CI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6
IXDD609CI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Case: TO220-5
Mounting: THT
Kind of package: tube
Operating temperature: -40...125°C
Output current: -9...9A
Turn-off time: 105ns
Turn-on time: 115ns
Number of channels: 1
Supply voltage: 4.5...35V
Kind of integrated circuit: gate driver; low-side
Kind of output: non-inverting
auf Bestellung 712 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.65 EUR
27+2.73 EUR
28+2.59 EUR
100+2.55 EUR
250+2.49 EUR
Mindestbestellmenge: 20
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IXDI609CI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6
IXDI609CI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Case: TO220-5
Mounting: THT
Kind of package: tube
Operating temperature: -40...125°C
Output current: -9...9A
Turn-off time: 105ns
Turn-on time: 115ns
Number of channels: 1
Supply voltage: 4.5...35V
Kind of integrated circuit: gate driver; low-side
Kind of output: inverting
auf Bestellung 790 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.02 EUR
24+3.02 EUR
25+2.92 EUR
50+2.8 EUR
Mindestbestellmenge: 18
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IXDN630MCI pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c
IXDN630MCI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 9÷35V
Kind of package: tube
Operating temperature: -40...125°C
Output current: -30...30A
Turn-off time: 135ns
Turn-on time: 135ns
Number of channels: 1
Supply voltage: 9...35V
Case: TO220-5
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Mounting: THT
Kind of output: non-inverting
auf Bestellung 110 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.15 EUR
10+7.82 EUR
Mindestbestellmenge: 9
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IXDI630MCI pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c
IXDI630MCI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Kind of package: tube
Operating temperature: -40...125°C
Output current: -30...30A
Turn-off time: 135ns
Turn-on time: 135ns
Number of channels: 1
Supply voltage: 12.5...35V
Case: TO220-5
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Mounting: THT
Kind of output: inverting
auf Bestellung 207 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.98 EUR
10+7.49 EUR
50+7.14 EUR
Mindestbestellmenge: 7
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VGB0124AY7A pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA996B22C9C8960C7&compId=VGB%2C%20F.pdf?ci_sign=950fe8d4ce9285f8e3019d516bbc23c267185ed8
VGB0124AY7A
Hersteller: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: braking rectifier assemblies; Urmax: 1.4kV
Type of bridge rectifier: braking rectifier assemblies
Max. off-state voltage: 1.4kV
Load current: 1A
Max. forward impulse current: 60A
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Case: VG-A
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+123.04 EUR
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VVZB135-16IOXT pVersion=0046&contRep=ZT&docId=005056AB90B41EDA95FA6ACC5A25A0C4&compId=VVZB135-16IOXT.pdf?ci_sign=0abee15b91779cab8eaf3183e5ed18c6123f9f86
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 1.2kV
Mechanical mounting: screw
Technology: X2PT
Gate-emitter voltage: ±20V
Collector current: 84A
Pulsed collector current: 225A
Power dissipation: 390W
Case: E2-Pack
Max. off-state voltage: 1.2kV
Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor
Semiconductor structure: diode/thyristor/IGBT
Type of semiconductor module: IGBT
Application: Inverter
Electrical mounting: Press-in PCB
Produkt ist nicht verfügbar
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VVZB120-16ioX pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8797C79C486320C4&compId=VVZB120-16ioX.pdf?ci_sign=3fc38b78861f9ddf7f4d6f88bb572053b6fc5921
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 1.2kV
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 180A
Pulsed collector current: 300A
Case: V2-Pack
Max. off-state voltage: 1.2kV
Topology: 3-phase diode-thyristor bridge; boost chopper
Semiconductor structure: diode/thyristor/IGBT
Type of semiconductor module: IGBT
Application: Inverter
Electrical mounting: Press-in PCB
Produkt ist nicht verfügbar
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VVZB170-16ioXT pVersion=0046&contRep=ZT&docId=005056AB90B41EDA95FA6E0C8264E0C4&compId=VVZB170-16IOXT.pdf?ci_sign=42714146d8e9e276eff660612979f982ac45948e
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 1.2kV
Mechanical mounting: screw
Technology: X2PT
Gate-emitter voltage: ±20V
Collector current: 140A
Pulsed collector current: 300A
Power dissipation: 500W
Case: E2-Pack
Max. off-state voltage: 1.2kV
Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor
Semiconductor structure: diode/thyristor/IGBT
Type of semiconductor module: IGBT
Application: Inverter
Electrical mounting: Press-in PCB
Produkt ist nicht verfügbar
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LF2388BTR pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91F27C32DDFA40CE&compId=LF2388BTR.pdf?ci_sign=0ffe7b00e916e274b61faec0bc85889558573824
LF2388BTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO20
Output current: -750...420mA
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 6
Voltage class: 600V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DSEC120-12AK Littelfuse-Power-Semiconductors-DSEC120-12AK-Datasheet?assetguid=6d7c4a83-944f-41eb-8b81-8f646ced8d79
DSEC120-12AK
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60Ax2; tube; Ifsm: 500A; TO264; 330W
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Type of diode: rectifying
Kind of package: tube
Case: TO264
Mounting: THT
Reverse recovery time: 40ns
Max. forward voltage: 2.66V
Load current: 60A x2
Max. forward impulse current: 0.5kA
Max. off-state voltage: 1.2kV
Power dissipation: 330W
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+19.08 EUR
10+16.9 EUR
Mindestbestellmenge: 4
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PLA150STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A99160C7&compId=PLA150.pdf?ci_sign=5c7b2ceba8611d1013361ab1d5aeffd0d8ee6558
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.250VAC
Type of relay: solid state
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Turn-on time: 2.5ms
Control current max.: 50mA
On-state resistance: 7Ω
Case: DIP6
Mounting: SMT
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Kind of output: MOSFET
Turn-off time: 0.5ms
Produkt ist nicht verfügbar
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IXFK240N25X3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCD7F081F39820&compId=IXFK(X)240N25X3.pdf?ci_sign=505f1373677b8d12c73e55874fb205a4c2db2269
IXFK240N25X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 240A; 1250W; TO264; 177ns
Kind of channel: enhancement
Mounting: THT
Case: TO264
Type of transistor: N-MOSFET
Features of semiconductor devices: ultra junction x-class
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 177ns
Gate charge: 345nC
On-state resistance: 5mΩ
Drain current: 240A
Power dissipation: 1.25kW
Drain-source voltage: 250V
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+31.69 EUR
10+30.47 EUR
Mindestbestellmenge: 3
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LCB710 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4942FD86A20C7&compId=LCB710.pdf?ci_sign=fec8a497ee6cfd935b3a12e0a9dcee5ec779b451
LCB710
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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LCB710S pVersion=0046&contRep=ZT&docId=005056AB82531EE995A5000E274458BF&compId=lcb710.pdf?ci_sign=6afcc9f1a3caec493c4d282148d45c8cc634e4bc
LCB710S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Kind of output: MOSFET
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.44 EUR
Mindestbestellmenge: 8
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LCB710STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4942FD86A20C7&compId=LCB710.pdf?ci_sign=fec8a497ee6cfd935b3a12e0a9dcee5ec779b451
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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IXXK100N60B3H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB5E9736E85820&compId=IXXK(X)100N60B3H1.pdf?ci_sign=d57f3e839e99034f93d7db6ec23554b65561ec01
IXXK100N60B3H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 695W; TO264
Type of transistor: IGBT
Power dissipation: 695W
Case: TO264
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 370A
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Turn-on time: 92ns
Turn-off time: 350ns
Produkt ist nicht verfügbar
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IXXX100N60B3H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB5E9736E85820&compId=IXXK(X)100N60B3H1.pdf?ci_sign=d57f3e839e99034f93d7db6ec23554b65561ec01
IXXX100N60B3H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 695W; PLUS247™
Type of transistor: IGBT
Power dissipation: 695W
Case: PLUS247™
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 370A
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Turn-on time: 92ns
Turn-off time: 350ns
Produkt ist nicht verfügbar
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IXXR100N60B3H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB60098651D820&compId=IXXR100N60B3H1.pdf?ci_sign=8aa4ff178fcc8ea93120f8855fed717e6de47bcb
IXXR100N60B3H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 400W; PLUS247™
Type of transistor: IGBT
Power dissipation: 400W
Case: PLUS247™
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 440A
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Turn-on time: 92ns
Turn-off time: 350ns
Produkt ist nicht verfügbar
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IXYH100N65A3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA9F637BE63D820&compId=IXYH100N65A3.pdf?ci_sign=9261f3ba6bf1e3a19a046602d5f86b4a1c536e72
IXYH100N65A3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 470W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 470W
Case: TO247-3
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Turn-on time: 87ns
Turn-off time: 459ns
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 480A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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DPG10I300PA DPG10I300PA.pdf
DPG10I300PA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10A; tube; Ifsm: 140A; TO220AC; 65W
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220AC
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 35ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 1.27V
Load current: 10A
Power dissipation: 65W
Max. forward impulse current: 140A
Max. off-state voltage: 300V
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.56 EUR
Mindestbestellmenge: 28
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IXFH74N20P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CA5AEB5963298BF&compId=IXF(V%2CH)74N20P(S).pdf?ci_sign=0f089991e74ed191755334448918e2eb4cb172ba
IXFH74N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 74A; 480W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 74A
Power dissipation: 480W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; PolarHT™
Reverse recovery time: 200ns
auf Bestellung 128 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.09 EUR
30+5.76 EUR
Mindestbestellmenge: 9
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IXBK55N300 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DB0714D9906B820&compId=IXBK55N300.pdf?ci_sign=f45794269312c1c9f7aac4b8d33880683a0ee457
IXBK55N300
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 55A; 625W; TO264
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Mounting: THT
Case: TO264
Gate charge: 335nC
Turn-off time: 475ns
Turn-on time: 637ns
Gate-emitter voltage: ±20V
Collector current: 55A
Pulsed collector current: 600A
Power dissipation: 625W
Collector-emitter voltage: 3kV
Kind of package: tube
Technology: BiMOSFET™
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+114.17 EUR
10+111.54 EUR
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IXFX100N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389E5CCA0EF7820&compId=IXFK(X)100N65X2.pdf?ci_sign=943e818235cb436b72c8d4fa8bbbd2fba5457b4b
IXFX100N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 100A; 1040W; PLUS247™; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 100A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
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IXFN100N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C84A066A758BF&compId=IXFN100N65X2.pdf?ci_sign=3208a95ccb272ce6be2f874277a28f7de43f3b3d
IXFN100N65X2
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 78A; SOT227B; screw; Idm: 200A
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 78A
Pulsed drain current: 200A
Power dissipation: 595W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 30mΩ
Gate charge: 183nC
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
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IXYN100N65B3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F336953A721820&compId=IXYN100N65B3D1.pdf?ci_sign=b4e0f477452c65189195015b983e3ffa516ad384
IXYN100N65B3D1
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 100A; SOT227B
Technology: GenX3™; XPT™
Power dissipation: 600W
Case: SOT227B
Semiconductor structure: single transistor
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Electrical mounting: screw
Collector current: 100A
Type of semiconductor module: IGBT
Pulsed collector current: 490A
Max. off-state voltage: 650V
Produkt ist nicht verfügbar
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IXYN100N65C3H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F339C051471820&compId=IXYN100N65C3H1.pdf?ci_sign=3b64951da6ee7c9d61858697f88f632ac9b3257e
IXYN100N65C3H1
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 90A; SOT227B; 600W
Technology: GenX3™; XPT™
Power dissipation: 600W
Case: SOT227B
Semiconductor structure: single transistor
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Electrical mounting: screw
Collector current: 90A
Type of semiconductor module: IGBT
Pulsed collector current: 420A
Max. off-state voltage: 650V
Produkt ist nicht verfügbar
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IXTP02N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389CC0EF702F820&compId=IXTP(Y)02N120P.pdf?ci_sign=e633bba2e601c335d99225d6beef7c2a93141ab1
IXTP02N120P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.2A; 33W; TO220AB; 1.6us
Type of transistor: N-MOSFET
Power dissipation: 33W
Case: TO220AB
Mounting: THT
Kind of package: tube
On-state resistance: 75Ω
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Reverse recovery time: 1.6µs
Drain current: 0.2A
Produkt ist nicht verfügbar
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IXTY02N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389CC0EF702F820&compId=IXTP(Y)02N120P.pdf?ci_sign=e633bba2e601c335d99225d6beef7c2a93141ab1
IXTY02N120P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.2A; 33W; TO252; 1.6us
Type of transistor: N-MOSFET
Power dissipation: 33W
Case: TO252
Mounting: SMD
Kind of package: tube
On-state resistance: 75Ω
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Reverse recovery time: 1.6µs
Drain current: 0.2A
Produkt ist nicht verfügbar
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IXGK320N60B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99CE3FAC0877D7820&compId=IXGK(x)320N60B3.pdf?ci_sign=7f3fb659fb9326cceb8b246edbd061c9df14d441
IXGK320N60B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 320A; 1.7kW; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 320A
Power dissipation: 1.7kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Mounting: THT
Gate charge: 585nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 595ns
Produkt ist nicht verfügbar
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MMIX1G320N60B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99CE3FCA36BD8D820&compId=MMIX1G320N60B3.pdf?ci_sign=e89ac637af771fafceeee892fa2d83d851e397a1
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 600V; 180A; 1kW; SMPD
Type of transistor: IGBT
Technology: BiMOSFET™; GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 180A
Power dissipation: 1kW
Case: SMPD
Gate-emitter voltage: ±20V
Pulsed collector current: 1kA
Mounting: SMD
Gate charge: 585nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 595ns
Produkt ist nicht verfügbar
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CPC1001NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4918F5536A0C7&compId=CPC1001N.pdf?ci_sign=fed221f1ce6717152996c4670d54d917b333a1f1
CPC1001NTR
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 1.5kV; SOP4; -40÷85°C
Switched voltage: max. 30V DC
Operating temperature: -40...85°C
Insulation voltage: 1.5kV
Kind of output: transistor
Type of optocoupler: optocoupler
Mounting: SMD
Case: SOP4
Turn-on time: 1µs
Turn-off time: 30µs
Control current max.: 5mA
Max. operating current: 0.1A
Number of channels: 1
CTR@If: 100-800%@0.2mA
Produkt ist nicht verfügbar
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XBB170 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F3A00C7&compId=XBB170.pdf?ci_sign=00fa93de2696ad932ea5cc4d0329771fb18f0a2c
XBB170
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+5.99 EUR
14+5.23 EUR
250+4.43 EUR
Mindestbestellmenge: 12
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XBB170P pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F3A00C7&compId=XBB170.pdf?ci_sign=00fa93de2696ad932ea5cc4d0329771fb18f0a2c
XBB170P
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 248 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.59 EUR
50+5.63 EUR
Mindestbestellmenge: 9
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CPC1333GR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232003FE0C7&compId=CPC1333.pdf?ci_sign=dd21761c011cbe67e43ba1e240dd7b0022006e20
CPC1333GR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: DIP4
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 2ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 231 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.52 EUR
36+1.99 EUR
100+1.74 EUR
Mindestbestellmenge: 29
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PLB171P pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7AE0C7&compId=PLB171.pdf?ci_sign=9fe800a18959fd9115c3f387e4c1692996f299da
PLB171P
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 80mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Max. operating current: 80mA
Switched voltage: max. 800V AC; max. 800V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 90Ω
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Insulation voltage: 5kV
Kind of output: MOSFET
auf Bestellung 57 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.29 EUR
13+5.81 EUR
50+5.29 EUR
Mindestbestellmenge: 10
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LBB110 description pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FEFA20C7&compId=LBB110.pdf?ci_sign=872eb5a8e73957397148ad4bb64f3a1a87d13845
LBB110
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 109 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.38 EUR
15+5.11 EUR
100+4.72 EUR
Mindestbestellmenge: 12
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IXTJ6N150 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88AEFA0A37288D3D1&compId=IXTJ6N150.pdf?ci_sign=75b3ac98eb9b8e916db94f48bf478deb2a432d0a
IXTJ6N150
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 125W; ISO247™; 1.5us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 3A
Power dissipation: 125W
Case: ISO247™
Gate-source voltage: ±30V
On-state resistance: 3.85Ω
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 1.5µs
Produkt ist nicht verfügbar
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IXYH40N90C3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAAB0C639A15820&compId=IXYH40N90C3D1.pdf?ci_sign=a9b420490784fb125d477b8ddf210fc5b67ef22e
IXYH40N90C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 40A; 500W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 40A
Power dissipation: 500W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Turn-on time: 81ns
Turn-off time: 237ns
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12 EUR
7+11.15 EUR
10+9.91 EUR
30+8.25 EUR
Mindestbestellmenge: 6
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IXTP102N15T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F12E1820&compId=IXTA(H%2CP%2CQ)102N15T.pdf?ci_sign=a7dd4f01d2a4226a8b0a38e27af5b16600fca392
IXTP102N15T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB; 97ns
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Gate charge: 87nC
Reverse recovery time: 97ns
On-state resistance: 18mΩ
Drain current: 102A
Drain-source voltage: 150V
Power dissipation: 455W
Produkt ist nicht verfügbar
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CPC1330GR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232003E60C7&compId=CPC1330.pdf?ci_sign=e830813f6059723aa9d1895d489a51cc31d0b4c7
CPC1330GR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Manufacturer series: OptoMOS
Case: DIP4
Mounting: SMT
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 4.57x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 30Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 5kV
Relay variant: 1-phase; current source
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+17.88 EUR
Mindestbestellmenge: 4
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DSEI30-12A pVersion=0046&contRep=ZT&docId=E2916DEC5E36DDF19A99005056AB752F&compId=92722.pdf?ci_sign=990727ced795f1f61d5fc4ad016abc029ccb1a31
DSEI30-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 26A; tube; Ifsm: 200A; TO247-2; 138W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 26A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO247-2
Max. forward voltage: 2.2V
Power dissipation: 138W
Reverse recovery time: 40ns
Technology: FRED
auf Bestellung 293 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.52 EUR
17+4.23 EUR
Mindestbestellmenge: 11
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XS170STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A99B40C7&compId=XS170.pdf?ci_sign=ae49039dc50cc2f138787b27e98a97db254a896c
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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PAA127STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269EA0C7&compId=PAA127.pdf?ci_sign=174896c92fdeb4bc429c856e4386b7216ac0d235
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 200mA
Switched voltage: max. 280V AC; max. 280V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 500µs
Turn-off time: 0.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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LAA108STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339892260C7&compId=LAA108.pdf?ci_sign=b422f07330ccafc6349ee64d10cd1d1a446af717
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 300mA
Switched voltage: max. 100V AC; max. 100V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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LCA182STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49461977F00C7&compId=LCA182.pdf?ci_sign=aca7998c54fcdc195895ad687c7e30558222e1cf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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LCA712STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269000C7&compId=LCA712.pdf?ci_sign=884b90e7d5ff2ff132dd7a2dd6470ab1872c2430
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 350µs
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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