| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IXTA08N100D2HV-TRL | IXYS |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; 1kV; 800mA; 60W; D2PAK,TO263AB Type of transistor: N-MOSFET Drain-source voltage: 1kV Drain current: 0.8A Power dissipation: 60W Case: D2PAK; TO263AB Gate-source voltage: 20V On-state resistance: 21Ω Mounting: SMD Gate charge: 14.6nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXGK320N60B3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 320A; 1.7kW; TO264 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 320A Power dissipation: 1.7kW Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 1.2kA Mounting: THT Gate charge: 585nC Kind of package: tube Turn-on time: 107ns Turn-off time: 595ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFA10N80P-TRL | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 800V; 10A; 300W; D2PAK,TO263; 250ns Type of transistor: N-MOSFET Technology: HiPerFET™ Drain-source voltage: 800V Drain current: 10A Power dissipation: 300W Case: D2PAK; TO263 Gate-source voltage: 30V On-state resistance: 1.1Ω Mounting: SMD Kind of channel: enhancement Reverse recovery time: 250ns Gate charge: 40nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXYH50N65C3H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 600W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Pulsed collector current: 250A Turn-on time: 56ns Turn-off time: 142ns Gate charge: 80nC |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFB150N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 150A; 1560W; 260ns Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Power dissipation: 1.56kW Case: PLUS264™ Mounting: THT Kind of package: tube Gate-source voltage: ±30V On-state resistance: 17mΩ Reverse recovery time: 260ns Gate charge: 355nC Polarisation: unipolar Drain current: 150A Kind of channel: enhancement Drain-source voltage: 650V |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXYP50N65C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO220-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 600W Case: TO220-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Pulsed collector current: 250A Turn-on time: 56ns Turn-off time: 145ns Gate charge: 86nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXYA50N65C3-TRL | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 132A; 600W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 132A Power dissipation: 600W Case: D2PAK Gate-emitter voltage: ±20V Mounting: SMD Kind of package: reel; tape Pulsed collector current: 250A Turn-off time: 90ns Gate charge: 86nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXYH50N65C3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 600W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Pulsed collector current: 250A Turn-on time: 56ns Turn-off time: 145ns Gate charge: 86nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| ZY200L340 | IXYS |
Category: Discrete semicon. modules - Unclass. Description: Accessories: cable with crimped terminals Type of accessories for semiconductors: cable with crimped terminals |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IXTY08N100D2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 0.8A Power dissipation: 60W Case: TO252 On-state resistance: 21Ω Mounting: SMD Kind of package: tube Kind of channel: depletion Gate charge: 325nC |
auf Bestellung 212 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTY01N100 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 0.1A Power dissipation: 25W Case: TO252 On-state resistance: 80Ω Mounting: SMD Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet |
auf Bestellung 346 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTY02N50D | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 200mA; Idm: 800mA; 25W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 0.2A Power dissipation: 25W Case: TO252 On-state resistance: 30Ω Mounting: SMD Kind of channel: depletion Reverse recovery time: 1µs Pulsed drain current: 0.8A Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTY01N100D-TRL | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; N; 1kV; 400mA; 25W; DPAK,TO252AA; 1.5us Type of transistor: N-MOSFET Polarisation: N Drain-source voltage: 1kV Drain current: 0.4A Power dissipation: 25W Case: DPAK; TO252AA On-state resistance: 80Ω Mounting: SMD Gate charge: 5.8nC Reverse recovery time: 1.5µs Version: module Gate-source voltage: 20V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXTY08N100D2-TRL | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 1kV; 800mA; 60W; DPAK,TO252AA; 1us Type of transistor: N-MOSFET Drain-source voltage: 1kV Drain current: 0.8A Power dissipation: 60W Case: DPAK; TO252AA On-state resistance: 21Ω Mounting: SMD Gate charge: 14.6nC Reverse recovery time: 1µs Gate-source voltage: 20V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXTY08N100P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO252; 750ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 0.8A Power dissipation: 42W Case: TO252 On-state resistance: 20Ω Mounting: SMD Kind of package: tube Kind of channel: enhancement Reverse recovery time: 750ns Features of semiconductor devices: standard power mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTY08N100P-TRL | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 1kV; 800mA; 42W; DPAK,TO252AA; 750ns Type of transistor: N-MOSFET Drain-source voltage: 1kV Drain current: 0.8A Power dissipation: 42W Case: DPAK; TO252AA On-state resistance: 20Ω Mounting: SMD Gate charge: 11.3nC Kind of channel: enhancement Reverse recovery time: 750ns Gate-source voltage: 20V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| CMA80E1400HB | IXYS |
Category: SMD/THT thyristors Description: Thyristor: standard; 1.4kV; 80A; TO247-3; THT; tube Mounting: THT Max. off-state voltage: 1.4kV Load current: 80A Kind of package: tube Case: TO247-3 Type of thyristor: standard |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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PLA134S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 350mA; max.100VAC Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Manufacturer series: OptoMOS Relay variant: 1-phase; current source Kind of output: MOSFET Body dimensions: 8.38x6.35x3.3mm Contacts configuration: SPST-NO Insulation voltage: 3.75kV Turn-on time: 5ms Switched voltage: max. 100V AC; max. 100V DC Max. operating current: 350mA Turn-off time: 5ms Control current max.: 50mA On-state resistance: 3Ω Type of relay: solid state |
auf Bestellung 213 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFH52N30P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 52A; 400W; TO247-3 Reverse recovery time: 160ns Mounting: THT Power dissipation: 400W Gate charge: 110nC Polarisation: unipolar Technology: HiPerFET™; Polar™ Drain current: 52A Kind of channel: enhancement Drain-source voltage: 300V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO247-3 On-state resistance: 73mΩ |
auf Bestellung 206 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFH56N30X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 56A; 320W; TO247-3 Reverse recovery time: 115ns Mounting: THT Power dissipation: 320W Gate charge: 56nC Polarisation: unipolar Technology: HiPerFET™; X3-Class Drain current: 56A Kind of channel: enhancement Drain-source voltage: 300V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO247-3 On-state resistance: 27mΩ |
auf Bestellung 121 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFH50N30Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 50A; 690W; TO247-3; 250ns Reverse recovery time: 250ns Mounting: THT Power dissipation: 690W Gate charge: 65nC Polarisation: unipolar Technology: HiPerFET™ Drain current: 50A Kind of channel: enhancement Drain-source voltage: 300V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO247-3 On-state resistance: 80mΩ |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FDA217S | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; SO8; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: SO8 Number of channels: 2 Mounting: SMD Operating temperature: -40...85°C Kind of package: tube |
auf Bestellung 121 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IX4428N | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: SO8 Number of channels: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Output current: -1.5...1.5A Kind of output: inverting; non-inverting |
auf Bestellung 252 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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CS22-08io1M | IXYS |
Category: SMD/THT thyristors Description: Thyristor: standard; 800V; Ifmax: 25A; 16A; Igt: 30/50mA; TO220FP Gate current: 30/50mA Max. off-state voltage: 0.8kV Load current: 16A Max. load current: 25A Kind of package: tube Case: TO220FP Type of thyristor: standard Mounting: THT Max. forward impulse current: 255A |
auf Bestellung 80 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTA120N04T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO263; 35ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 200W Case: TO263 On-state resistance: 6.1mΩ Mounting: SMD Gate charge: 58nC Kind of channel: enhancement Reverse recovery time: 35ns Features of semiconductor devices: thrench gate power mosfet Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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CPC1301GR | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 350V; SO4 Mounting: SMD Case: SO4 Collector-emitter voltage: 350V CTR@If: 1000-8000%@1mA Kind of output: Darlington Insulation voltage: 5kV Type of optocoupler: optocoupler Number of channels: 1 |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| VVZ39-08ho7 | IXYS |
Category: Three phase controlled bridge rectif. Description: Bridge rectifier: half-controlled; Urmax: 800V; If: 39A; Ifsm: 180A Version: module Max. forward impulse current: 180A Gate current: 25/50mA Max. forward voltage: 1.6V Mechanical mounting: screw Leads: wire Ø 0.75mm Max. off-state voltage: 0.8kV Electrical mounting: Press-in PCB Load current: 39A Case: ECO-PAC 1 Type of bridge rectifier: half-controlled |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| VVZ39-12ho7 | IXYS |
Category: Three phase controlled bridge rectif. Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 39A; module Version: module Max. forward impulse current: 180A Gate current: 25/50mA Max. forward voltage: 1.6V Mechanical mounting: screw Leads: wire Ø 0.75mm Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Load current: 39A Case: ECO-PAC 1 Type of bridge rectifier: half-controlled |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| CPC2025NTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 400V AC; max. 400V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 30Ω Mounting: SMT Case: SO8 Body dimensions: 9.35x3.81x2.18mm Insulation voltage: 1.5kV Turn-on time: 2ms Turn-off time: 1ms Kind of output: MOSFET Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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DSS16-01AS | IXYS |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 16A; reel,tape; 105W Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 0.1kV Load current: 16A Semiconductor structure: single diode Max. forward voltage: 0.64V Max. load current: 35A Max. forward impulse current: 230A Kind of package: reel; tape Power dissipation: 105W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXDN614SI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V Mounting: SMD Operating temperature: -40...125°C Supply voltage: 4.5...35V Output current: -14...14A Type of integrated circuit: driver Kind of output: non-inverting Turn-on time: 140ns Kind of package: tube Case: SO8-EP Turn-off time: 130ns Kind of integrated circuit: gate driver; low-side Number of channels: 1 |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFX360N10T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 360A Power dissipation: 1.25kW Case: PLUS247™ On-state resistance: 2.9mΩ Mounting: THT Kind of channel: enhancement Gate charge: 525nC Features of semiconductor devices: thrench gate power mosfet Kind of package: tube |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTA60N10T | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO263; 59ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Power dissipation: 176W Case: TO263 On-state resistance: 18mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 49nC Features of semiconductor devices: thrench gate power mosfet Kind of package: tube Reverse recovery time: 59ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTA60N10T-TRL | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; N; 100V; 60A; 176W; D2PAK,TO263; 59ns Type of transistor: N-MOSFET Polarisation: N Drain-source voltage: 100V Drain current: 60A Power dissipation: 176W Case: D2PAK; TO263 Gate-source voltage: 20V On-state resistance: 18mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 49nC Application: automotive industry Reverse recovery time: 59ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXTQ60N10T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Trench; 100V; 60A; 176W; TO3P; 59ns Type of transistor: N-MOSFET Technology: Trench Drain-source voltage: 100V Drain current: 60A Power dissipation: 176W Case: TO3P Gate-source voltage: 30V On-state resistance: 18mΩ Mounting: THT Gate charge: 49nC Application: automotive industry Reverse recovery time: 59ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IXFK360N10T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 360A Power dissipation: 1.25kW Case: TO264 On-state resistance: 2.9mΩ Mounting: THT Kind of channel: enhancement Gate charge: 525nC Features of semiconductor devices: thrench gate power mosfet Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MIXG180W1200PTEH | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Technology: X2PT Mechanical mounting: screw Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Semiconductor structure: transistor/transistor Case: E3-Pack Collector current: 195A Topology: IGBT three-phase bridge; NTC thermistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| MIXG180W1200TEH | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Technology: X2PT Mechanical mounting: screw Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Semiconductor structure: transistor/transistor Case: E3-Pack Collector current: 195A Topology: IGBT three-phase bridge; NTC thermistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| MCC501-14IO2 | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.4kV; 503A; W74; Ifsm: 14.5kA Max. forward impulse current: 14.5kA Gate current: 250mA Type of semiconductor module: thyristor Mechanical mounting: screw Max. off-state voltage: 1.4kV Electrical mounting: screw Load current: 503A Kind of package: bulk Semiconductor structure: double series Case: W74 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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IXFA270N06T3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO263; 47ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 270A Power dissipation: 480W Case: TO263 Gate-source voltage: ±20V On-state resistance: 3.1mΩ Mounting: SMD Gate charge: 200nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 47ns Technology: HiPerFET™; TrenchT3™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFP270N06T3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO220AB; 47ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 270A Power dissipation: 480W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 3.1mΩ Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 47ns Technology: HiPerFET™; TrenchT3™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTH76P10T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -76A; 298W; 70ns Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -76A Power dissipation: 298W Case: TO247-3 Gate-source voltage: ±15V On-state resistance: 25mΩ Mounting: THT Gate charge: 197nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 70ns Technology: TrenchP™ |
auf Bestellung 158 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTH96P085T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -96A; 298W; TO247-3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -85V Drain current: -96A Power dissipation: 298W Case: TO247-3 Gate-source voltage: ±15V On-state resistance: 13mΩ Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 55ns Technology: TrenchP™ |
auf Bestellung 388 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTH52P10P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO247-3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -52A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 50mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 120ns Technology: PolarP™ |
auf Bestellung 134 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTH76N25T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO247-3; 148ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 76A Power dissipation: 460W Case: TO247-3 On-state resistance: 44mΩ Mounting: THT Gate charge: 92nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 148ns Features of semiconductor devices: thrench gate power mosfet |
auf Bestellung 234 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTH96N25T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 96A; 625W; TO247-3; 158ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 96A Power dissipation: 625W Case: TO247-3 On-state resistance: 29mΩ Mounting: THT Gate charge: 114nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 158ns Features of semiconductor devices: thrench gate power mosfet |
auf Bestellung 216 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTH44P15T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -44A; 298W; 140ns Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -150V Drain current: -44A Power dissipation: 298W Case: TO247-3 Gate-source voltage: ±15V On-state resistance: 65mΩ Mounting: THT Gate charge: 175nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 140ns Technology: TrenchP™ |
auf Bestellung 304 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTH270N04T4 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO247-3; 48ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 270A Power dissipation: 375W Case: TO247-3 On-state resistance: 2.4mΩ Mounting: THT Gate charge: 182nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 48ns Features of semiconductor devices: thrench gate power mosfet |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTH8P50 | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -500V; -8A; 180W; TO247-3; 400ns Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -500V Drain current: -8A Power dissipation: 180W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: THT Gate charge: 130nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 400ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTH20P50P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -20A; 460W; TO247-3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -500V Drain current: -20A Power dissipation: 460W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 0.45Ω Mounting: THT Gate charge: 103nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 406ns Technology: PolarP™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTH10P50P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO247-3 Power dissipation: 300W Gate charge: 50nC Polarisation: unipolar Technology: PolarP™ Drain current: -10A Kind of channel: enhancement Drain-source voltage: -500V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO247-3 On-state resistance: 1Ω Reverse recovery time: 414ns Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTH90P10P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -90A; 462W; TO247-3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -90A Power dissipation: 462W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 144ns Technology: PolarP™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTH16N20D2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 16A; 695W; TO247-3; 607ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 16A Power dissipation: 695W Case: TO247-3 On-state resistance: 80mΩ Mounting: THT Kind of package: tube Kind of channel: depletion Reverse recovery time: 607ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTH88N30P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 88A; 600W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 88A Power dissipation: 600W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 250ns Technology: PolarHT™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTH88N15 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 88A; 400W; TO247-3; 150ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 88A Power dissipation: 400W Case: TO247-3 On-state resistance: 22mΩ Mounting: THT Gate charge: 170nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 150ns Features of semiconductor devices: standard power mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTH10P60 | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -600V; -10A; 300W; TO247-3; 500ns Power dissipation: 300W Gate charge: 135nC Polarisation: unipolar Drain current: -10A Kind of channel: enhancement Drain-source voltage: -600V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO247-3 On-state resistance: 1Ω Reverse recovery time: 0.5µs Mounting: THT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXTP08N100D2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 0.8A Power dissipation: 60W Case: TO220AB On-state resistance: 21Ω Mounting: THT Gate charge: 325nC Kind of package: tube Kind of channel: depletion |
auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTA08N100D2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 0.8A Power dissipation: 60W Case: TO263 On-state resistance: 21Ω Mounting: SMD Gate charge: 325nC Kind of package: tube Kind of channel: depletion |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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 |
CPC3708CTR | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.8W; SOT89 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 350V Drain current: 0.13A Power dissipation: 1.8W Case: SOT89 Gate-source voltage: ±20V On-state resistance: 8Ω Mounting: SMD Kind of package: reel; tape Kind of channel: depletion |
auf Bestellung 2267 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC3708ZTR | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 350V Drain current: 0.13A Power dissipation: 2.5W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 8Ω Mounting: SMD Kind of package: reel; tape Kind of channel: depletion |
auf Bestellung 691 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXTA08N100D2HV-TRL |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 800mA; 60W; D2PAK,TO263AB
Type of transistor: N-MOSFET
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 60W
Case: D2PAK; TO263AB
Gate-source voltage: 20V
On-state resistance: 21Ω
Mounting: SMD
Gate charge: 14.6nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 800mA; 60W; D2PAK,TO263AB
Type of transistor: N-MOSFET
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 60W
Case: D2PAK; TO263AB
Gate-source voltage: 20V
On-state resistance: 21Ω
Mounting: SMD
Gate charge: 14.6nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| IXGK320N60B3 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 320A; 1.7kW; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 320A
Power dissipation: 1.7kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Mounting: THT
Gate charge: 585nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 595ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 320A; 1.7kW; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 320A
Power dissipation: 1.7kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Mounting: THT
Gate charge: 585nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 595ns
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IXFA10N80P-TRL |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 800V; 10A; 300W; D2PAK,TO263; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: D2PAK; TO263
Gate-source voltage: 30V
On-state resistance: 1.1Ω
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate charge: 40nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 800V; 10A; 300W; D2PAK,TO263; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: D2PAK; TO263
Gate-source voltage: 30V
On-state resistance: 1.1Ω
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate charge: 40nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| IXYH50N65C3H1 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 250A
Turn-on time: 56ns
Turn-off time: 142ns
Gate charge: 80nC
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 250A
Turn-on time: 56ns
Turn-off time: 142ns
Gate charge: 80nC
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFB150N65X2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 150A; 1560W; 260ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Power dissipation: 1.56kW
Case: PLUS264™
Mounting: THT
Kind of package: tube
Gate-source voltage: ±30V
On-state resistance: 17mΩ
Reverse recovery time: 260ns
Gate charge: 355nC
Polarisation: unipolar
Drain current: 150A
Kind of channel: enhancement
Drain-source voltage: 650V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 150A; 1560W; 260ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Power dissipation: 1.56kW
Case: PLUS264™
Mounting: THT
Kind of package: tube
Gate-source voltage: ±30V
On-state resistance: 17mΩ
Reverse recovery time: 260ns
Gate charge: 355nC
Polarisation: unipolar
Drain current: 150A
Kind of channel: enhancement
Drain-source voltage: 650V
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
| IXYP50N65C3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 250A
Turn-on time: 56ns
Turn-off time: 145ns
Gate charge: 86nC
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 250A
Turn-on time: 56ns
Turn-off time: 145ns
Gate charge: 86nC
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IXYA50N65C3-TRL |
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 132A; 600W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 132A
Power dissipation: 600W
Case: D2PAK
Gate-emitter voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 250A
Turn-off time: 90ns
Gate charge: 86nC
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 132A; 600W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 132A
Power dissipation: 600W
Case: D2PAK
Gate-emitter voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 250A
Turn-off time: 90ns
Gate charge: 86nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| IXYH50N65C3D1 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 250A
Turn-on time: 56ns
Turn-off time: 145ns
Gate charge: 86nC
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 250A
Turn-on time: 56ns
Turn-off time: 145ns
Gate charge: 86nC
Produkt ist nicht verfügbar
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| ZY200L340 |
|
Hersteller: IXYS
Category: Discrete semicon. modules - Unclass.
Description: Accessories: cable with crimped terminals
Type of accessories for semiconductors: cable with crimped terminals
Category: Discrete semicon. modules - Unclass.
Description: Accessories: cable with crimped terminals
Type of accessories for semiconductors: cable with crimped terminals
Produkt ist nicht verfügbar
Mindestbestellmenge: 250 Stücke
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| IXTY08N100D2 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 60W
Case: TO252
On-state resistance: 21Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Gate charge: 325nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 60W
Case: TO252
On-state resistance: 21Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Gate charge: 325nC
auf Bestellung 212 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTY01N100 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.1A
Power dissipation: 25W
Case: TO252
On-state resistance: 80Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.1A
Power dissipation: 25W
Case: TO252
On-state resistance: 80Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
auf Bestellung 346 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTY02N50D |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 200mA; Idm: 800mA; 25W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.2A
Power dissipation: 25W
Case: TO252
On-state resistance: 30Ω
Mounting: SMD
Kind of channel: depletion
Reverse recovery time: 1µs
Pulsed drain current: 0.8A
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 200mA; Idm: 800mA; 25W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.2A
Power dissipation: 25W
Case: TO252
On-state resistance: 30Ω
Mounting: SMD
Kind of channel: depletion
Reverse recovery time: 1µs
Pulsed drain current: 0.8A
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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| IXTY01N100D-TRL |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 1kV; 400mA; 25W; DPAK,TO252AA; 1.5us
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 1kV
Drain current: 0.4A
Power dissipation: 25W
Case: DPAK; TO252AA
On-state resistance: 80Ω
Mounting: SMD
Gate charge: 5.8nC
Reverse recovery time: 1.5µs
Version: module
Gate-source voltage: 20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 1kV; 400mA; 25W; DPAK,TO252AA; 1.5us
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 1kV
Drain current: 0.4A
Power dissipation: 25W
Case: DPAK; TO252AA
On-state resistance: 80Ω
Mounting: SMD
Gate charge: 5.8nC
Reverse recovery time: 1.5µs
Version: module
Gate-source voltage: 20V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| IXTY08N100D2-TRL |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 800mA; 60W; DPAK,TO252AA; 1us
Type of transistor: N-MOSFET
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 60W
Case: DPAK; TO252AA
On-state resistance: 21Ω
Mounting: SMD
Gate charge: 14.6nC
Reverse recovery time: 1µs
Gate-source voltage: 20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 800mA; 60W; DPAK,TO252AA; 1us
Type of transistor: N-MOSFET
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 60W
Case: DPAK; TO252AA
On-state resistance: 21Ω
Mounting: SMD
Gate charge: 14.6nC
Reverse recovery time: 1µs
Gate-source voltage: 20V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| IXTY08N100P |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO252; 750ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 42W
Case: TO252
On-state resistance: 20Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 750ns
Features of semiconductor devices: standard power mosfet
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO252; 750ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 42W
Case: TO252
On-state resistance: 20Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 750ns
Features of semiconductor devices: standard power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IXTY08N100P-TRL |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 800mA; 42W; DPAK,TO252AA; 750ns
Type of transistor: N-MOSFET
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 42W
Case: DPAK; TO252AA
On-state resistance: 20Ω
Mounting: SMD
Gate charge: 11.3nC
Kind of channel: enhancement
Reverse recovery time: 750ns
Gate-source voltage: 20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 800mA; 42W; DPAK,TO252AA; 750ns
Type of transistor: N-MOSFET
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 42W
Case: DPAK; TO252AA
On-state resistance: 20Ω
Mounting: SMD
Gate charge: 11.3nC
Kind of channel: enhancement
Reverse recovery time: 750ns
Gate-source voltage: 20V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| CMA80E1400HB |
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.4kV; 80A; TO247-3; THT; tube
Mounting: THT
Max. off-state voltage: 1.4kV
Load current: 80A
Kind of package: tube
Case: TO247-3
Type of thyristor: standard
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.4kV; 80A; TO247-3; THT; tube
Mounting: THT
Max. off-state voltage: 1.4kV
Load current: 80A
Kind of package: tube
Case: TO247-3
Type of thyristor: standard
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| PLA134S |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 350mA; max.100VAC
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 100V AC; max. 100V DC
Max. operating current: 350mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 3Ω
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 350mA; max.100VAC
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 100V AC; max. 100V DC
Max. operating current: 350mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 3Ω
Type of relay: solid state
auf Bestellung 213 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFH52N30P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 52A; 400W; TO247-3
Reverse recovery time: 160ns
Mounting: THT
Power dissipation: 400W
Gate charge: 110nC
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain current: 52A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO247-3
On-state resistance: 73mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 52A; 400W; TO247-3
Reverse recovery time: 160ns
Mounting: THT
Power dissipation: 400W
Gate charge: 110nC
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain current: 52A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO247-3
On-state resistance: 73mΩ
auf Bestellung 206 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFH56N30X3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 56A; 320W; TO247-3
Reverse recovery time: 115ns
Mounting: THT
Power dissipation: 320W
Gate charge: 56nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 56A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO247-3
On-state resistance: 27mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 56A; 320W; TO247-3
Reverse recovery time: 115ns
Mounting: THT
Power dissipation: 320W
Gate charge: 56nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 56A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO247-3
On-state resistance: 27mΩ
auf Bestellung 121 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFH50N30Q3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 50A; 690W; TO247-3; 250ns
Reverse recovery time: 250ns
Mounting: THT
Power dissipation: 690W
Gate charge: 65nC
Polarisation: unipolar
Technology: HiPerFET™
Drain current: 50A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO247-3
On-state resistance: 80mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 50A; 690W; TO247-3; 250ns
Reverse recovery time: 250ns
Mounting: THT
Power dissipation: 690W
Gate charge: 65nC
Polarisation: unipolar
Technology: HiPerFET™
Drain current: 50A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO247-3
On-state resistance: 80mΩ
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
| FDA217S |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Number of channels: 2
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Number of channels: 2
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
auf Bestellung 121 Stücke:
Lieferzeit 14-21 Tag (e)
| IX4428N |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Output current: -1.5...1.5A
Kind of output: inverting; non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Output current: -1.5...1.5A
Kind of output: inverting; non-inverting
auf Bestellung 252 Stücke:
Lieferzeit 14-21 Tag (e)
| CS22-08io1M |
|
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor: standard; 800V; Ifmax: 25A; 16A; Igt: 30/50mA; TO220FP
Gate current: 30/50mA
Max. off-state voltage: 0.8kV
Load current: 16A
Max. load current: 25A
Kind of package: tube
Case: TO220FP
Type of thyristor: standard
Mounting: THT
Max. forward impulse current: 255A
Category: SMD/THT thyristors
Description: Thyristor: standard; 800V; Ifmax: 25A; 16A; Igt: 30/50mA; TO220FP
Gate current: 30/50mA
Max. off-state voltage: 0.8kV
Load current: 16A
Max. load current: 25A
Kind of package: tube
Case: TO220FP
Type of thyristor: standard
Mounting: THT
Max. forward impulse current: 255A
auf Bestellung 80 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTA120N04T2 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO263; 35ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 200W
Case: TO263
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 58nC
Kind of channel: enhancement
Reverse recovery time: 35ns
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO263; 35ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 200W
Case: TO263
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 58nC
Kind of channel: enhancement
Reverse recovery time: 35ns
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
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| CPC1301GR |
|
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 350V; SO4
Mounting: SMD
Case: SO4
Collector-emitter voltage: 350V
CTR@If: 1000-8000%@1mA
Kind of output: Darlington
Insulation voltage: 5kV
Type of optocoupler: optocoupler
Number of channels: 1
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 350V; SO4
Mounting: SMD
Case: SO4
Collector-emitter voltage: 350V
CTR@If: 1000-8000%@1mA
Kind of output: Darlington
Insulation voltage: 5kV
Type of optocoupler: optocoupler
Number of channels: 1
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
| VVZ39-08ho7 |
|
Hersteller: IXYS
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 800V; If: 39A; Ifsm: 180A
Version: module
Max. forward impulse current: 180A
Gate current: 25/50mA
Max. forward voltage: 1.6V
Mechanical mounting: screw
Leads: wire Ø 0.75mm
Max. off-state voltage: 0.8kV
Electrical mounting: Press-in PCB
Load current: 39A
Case: ECO-PAC 1
Type of bridge rectifier: half-controlled
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 800V; If: 39A; Ifsm: 180A
Version: module
Max. forward impulse current: 180A
Gate current: 25/50mA
Max. forward voltage: 1.6V
Mechanical mounting: screw
Leads: wire Ø 0.75mm
Max. off-state voltage: 0.8kV
Electrical mounting: Press-in PCB
Load current: 39A
Case: ECO-PAC 1
Type of bridge rectifier: half-controlled
Produkt ist nicht verfügbar
Im Einkaufswagen
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| VVZ39-12ho7 |
|
Hersteller: IXYS
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 39A; module
Version: module
Max. forward impulse current: 180A
Gate current: 25/50mA
Max. forward voltage: 1.6V
Mechanical mounting: screw
Leads: wire Ø 0.75mm
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Load current: 39A
Case: ECO-PAC 1
Type of bridge rectifier: half-controlled
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 39A; module
Version: module
Max. forward impulse current: 180A
Gate current: 25/50mA
Max. forward voltage: 1.6V
Mechanical mounting: screw
Leads: wire Ø 0.75mm
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Load current: 39A
Case: ECO-PAC 1
Type of bridge rectifier: half-controlled
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| CPC2025NTR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SO8
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SO8
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| DSS16-01AS |
|
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 16A; reel,tape; 105W
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 16A
Semiconductor structure: single diode
Max. forward voltage: 0.64V
Max. load current: 35A
Max. forward impulse current: 230A
Kind of package: reel; tape
Power dissipation: 105W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 16A; reel,tape; 105W
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 16A
Semiconductor structure: single diode
Max. forward voltage: 0.64V
Max. load current: 35A
Max. forward impulse current: 230A
Kind of package: reel; tape
Power dissipation: 105W
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IXDN614SI |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 4.5...35V
Output current: -14...14A
Type of integrated circuit: driver
Kind of output: non-inverting
Turn-on time: 140ns
Kind of package: tube
Case: SO8-EP
Turn-off time: 130ns
Kind of integrated circuit: gate driver; low-side
Number of channels: 1
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 4.5...35V
Output current: -14...14A
Type of integrated circuit: driver
Kind of output: non-inverting
Turn-on time: 140ns
Kind of package: tube
Case: SO8-EP
Turn-off time: 130ns
Kind of integrated circuit: gate driver; low-side
Number of channels: 1
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFX360N10T |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 360A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 2.9mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 525nC
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 360A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 2.9mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 525nC
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTA60N10T |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO263; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 176W
Case: TO263
On-state resistance: 18mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 49nC
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
Reverse recovery time: 59ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO263; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 176W
Case: TO263
On-state resistance: 18mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 49nC
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
Reverse recovery time: 59ns
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IXTA60N10T-TRL |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 60A; 176W; D2PAK,TO263; 59ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 176W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 18mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 49nC
Application: automotive industry
Reverse recovery time: 59ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 60A; 176W; D2PAK,TO263; 59ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 176W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 18mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 49nC
Application: automotive industry
Reverse recovery time: 59ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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Stück im Wert von UAH
| IXTQ60N10T |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench; 100V; 60A; 176W; TO3P; 59ns
Type of transistor: N-MOSFET
Technology: Trench
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 176W
Case: TO3P
Gate-source voltage: 30V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 49nC
Application: automotive industry
Reverse recovery time: 59ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench; 100V; 60A; 176W; TO3P; 59ns
Type of transistor: N-MOSFET
Technology: Trench
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 176W
Case: TO3P
Gate-source voltage: 30V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 49nC
Application: automotive industry
Reverse recovery time: 59ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXFK360N10T |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 360A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 2.9mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 525nC
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 360A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 2.9mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 525nC
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
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Im Einkaufswagen
Stück im Wert von UAH
| MIXG180W1200PTEH |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Technology: X2PT
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Semiconductor structure: transistor/transistor
Case: E3-Pack
Collector current: 195A
Topology: IGBT three-phase bridge; NTC thermistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Technology: X2PT
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Semiconductor structure: transistor/transistor
Case: E3-Pack
Collector current: 195A
Topology: IGBT three-phase bridge; NTC thermistor
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| MIXG180W1200TEH |
|
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Technology: X2PT
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Semiconductor structure: transistor/transistor
Case: E3-Pack
Collector current: 195A
Topology: IGBT three-phase bridge; NTC thermistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Technology: X2PT
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Semiconductor structure: transistor/transistor
Case: E3-Pack
Collector current: 195A
Topology: IGBT three-phase bridge; NTC thermistor
Produkt ist nicht verfügbar
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| MCC501-14IO2 |
|
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 503A; W74; Ifsm: 14.5kA
Max. forward impulse current: 14.5kA
Gate current: 250mA
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.4kV
Electrical mounting: screw
Load current: 503A
Kind of package: bulk
Semiconductor structure: double series
Case: W74
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 503A; W74; Ifsm: 14.5kA
Max. forward impulse current: 14.5kA
Gate current: 250mA
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.4kV
Electrical mounting: screw
Load current: 503A
Kind of package: bulk
Semiconductor structure: double series
Case: W74
Produkt ist nicht verfügbar
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| IXFA270N06T3 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO263; 47ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 480W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 47ns
Technology: HiPerFET™; TrenchT3™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO263; 47ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 480W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 47ns
Technology: HiPerFET™; TrenchT3™
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| IXFP270N06T3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO220AB; 47ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 480W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 47ns
Technology: HiPerFET™; TrenchT3™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO220AB; 47ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 480W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 47ns
Technology: HiPerFET™; TrenchT3™
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Stück im Wert von UAH
| IXTH76P10T |
|
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -76A; 298W; 70ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -76A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
Technology: TrenchP™
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -76A; 298W; 70ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -76A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
Technology: TrenchP™
auf Bestellung 158 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTH96P085T |
|
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -96A; 298W; TO247-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -85V
Drain current: -96A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 55ns
Technology: TrenchP™
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -96A; 298W; TO247-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -85V
Drain current: -96A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 55ns
Technology: TrenchP™
auf Bestellung 388 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTH52P10P |
|
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO247-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -52A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
Technology: PolarP™
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO247-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -52A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
Technology: PolarP™
auf Bestellung 134 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTH76N25T |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO247-3; 148ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 76A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 148ns
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO247-3; 148ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 76A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 148ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 234 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTH96N25T |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 96A; 625W; TO247-3; 158ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 96A
Power dissipation: 625W
Case: TO247-3
On-state resistance: 29mΩ
Mounting: THT
Gate charge: 114nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 158ns
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 96A; 625W; TO247-3; 158ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 96A
Power dissipation: 625W
Case: TO247-3
On-state resistance: 29mΩ
Mounting: THT
Gate charge: 114nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 158ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 216 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTH44P15T |
|
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -44A; 298W; 140ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -44A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 175nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Technology: TrenchP™
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -44A; 298W; 140ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -44A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 175nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Technology: TrenchP™
auf Bestellung 304 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTH270N04T4 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO247-3; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 375W
Case: TO247-3
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 182nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 48ns
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO247-3; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 375W
Case: TO247-3
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 182nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 48ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTH8P50 |
|
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -8A; 180W; TO247-3; 400ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -8A
Power dissipation: 180W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -8A; 180W; TO247-3; 400ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -8A
Power dissipation: 180W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTH20P50P |
|
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -20A; 460W; TO247-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -20A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 406ns
Technology: PolarP™
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -20A; 460W; TO247-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -20A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 406ns
Technology: PolarP™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTH10P50P |
|
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO247-3
Power dissipation: 300W
Gate charge: 50nC
Polarisation: unipolar
Technology: PolarP™
Drain current: -10A
Kind of channel: enhancement
Drain-source voltage: -500V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO247-3
On-state resistance: 1Ω
Reverse recovery time: 414ns
Mounting: THT
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO247-3
Power dissipation: 300W
Gate charge: 50nC
Polarisation: unipolar
Technology: PolarP™
Drain current: -10A
Kind of channel: enhancement
Drain-source voltage: -500V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO247-3
On-state resistance: 1Ω
Reverse recovery time: 414ns
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTH90P10P |
|
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -90A; 462W; TO247-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -90A
Power dissipation: 462W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 144ns
Technology: PolarP™
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -90A; 462W; TO247-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -90A
Power dissipation: 462W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 144ns
Technology: PolarP™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTH16N20D2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; 695W; TO247-3; 607ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 16A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 607ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; 695W; TO247-3; 607ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 16A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 607ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTH88N30P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 88A; 600W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 88A
Power dissipation: 600W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: PolarHT™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 88A; 600W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 88A
Power dissipation: 600W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: PolarHT™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTH88N15 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 88A; 400W; TO247-3; 150ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 88A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Features of semiconductor devices: standard power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 88A; 400W; TO247-3; 150ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 88A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Features of semiconductor devices: standard power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTH10P60 |
|
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -600V; -10A; 300W; TO247-3; 500ns
Power dissipation: 300W
Gate charge: 135nC
Polarisation: unipolar
Drain current: -10A
Kind of channel: enhancement
Drain-source voltage: -600V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO247-3
On-state resistance: 1Ω
Reverse recovery time: 0.5µs
Mounting: THT
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -600V; -10A; 300W; TO247-3; 500ns
Power dissipation: 300W
Gate charge: 135nC
Polarisation: unipolar
Drain current: -10A
Kind of channel: enhancement
Drain-source voltage: -600V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO247-3
On-state resistance: 1Ω
Reverse recovery time: 0.5µs
Mounting: THT
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXTP08N100D2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 60W
Case: TO220AB
On-state resistance: 21Ω
Mounting: THT
Gate charge: 325nC
Kind of package: tube
Kind of channel: depletion
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 60W
Case: TO220AB
On-state resistance: 21Ω
Mounting: THT
Gate charge: 325nC
Kind of package: tube
Kind of channel: depletion
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTA08N100D2 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 60W
Case: TO263
On-state resistance: 21Ω
Mounting: SMD
Gate charge: 325nC
Kind of package: tube
Kind of channel: depletion
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 60W
Case: TO263
On-state resistance: 21Ω
Mounting: SMD
Gate charge: 325nC
Kind of package: tube
Kind of channel: depletion
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
| CPC3708CTR |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.8W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 1.8W
Case: SOT89
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.8W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 1.8W
Case: SOT89
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
auf Bestellung 2267 Stücke:
Lieferzeit 14-21 Tag (e)
| CPC3708ZTR |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
auf Bestellung 691 Stücke:
Lieferzeit 14-21 Tag (e)