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DSEP29-12A DSEP29-12A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD59D0904DFD8BF&compId=DSEP29-12A.pdf?ci_sign=52e4f654c53702ba952ecba83e74d2eda922abbb Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO220AC; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO220AC
Max. forward voltage: 1.81V
Power dissipation: 165W
Reverse recovery time: 40ns
Technology: HiPerFRED™
auf Bestellung 197 Stücke:
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14+5.18 EUR
22+3.26 EUR
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DSI30-12A DSI30-12A IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFEECF6943966143&compId=DSI30-12A.pdf?ci_sign=f9a445f10c0aa8da27c3439715f2c7bf4e306c19 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 300A; TO220AC; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.25V
Max. forward impulse current: 0.3kA
Power dissipation: 160W
Kind of package: tube
auf Bestellung 148 Stücke:
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22+3.26 EUR
37+1.94 EUR
39+1.84 EUR
100+1.77 EUR
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MDD142-12N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB834FBC6AAC00C4&compId=MDD142-12N1.pdf?ci_sign=e60450221a50dc38006779b9dcd279ebaf641ce1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 165A; Y4-M6; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.05V
Load current: 165A
Max. forward impulse current: 4.7kA
Max. off-state voltage: 1.2kV
Case: Y4-M6
Produkt ist nicht verfügbar
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DMA30P1600HR DMA30P1600HR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB4530BDDF9C0C4&compId=DMA30P1600HR.pdf?ci_sign=353bf02d8c968b714b88bc63f36a7db07a0987a9 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 30A; tube; Ifsm: 255A; ISO247™; 115W
Kind of package: tube
Case: ISO247™
Semiconductor structure: double series
Type of diode: rectifying
Mounting: THT
Max. forward voltage: 1.23V
Power dissipation: 115W
Max. forward impulse current: 255A
Load current: 30A
Max. off-state voltage: 1.6kV
auf Bestellung 30 Stücke:
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7+11.41 EUR
9+8.18 EUR
10+7.74 EUR
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MCMA140P1600TA MCMA140P1600TA IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EB69BB909ED18BF&compId=MCMA140P1600TA.pdf?ci_sign=b12199e01ae05027ecc8d6bac32e78da8a23126a pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 140A; TO240AA; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.28V
Max. forward impulse current: 2.04kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 150/200mA
auf Bestellung 17 Stücke:
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2+46.52 EUR
5+45.27 EUR
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IXFH16N60P3 IXFH16N60P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D52E81740A5820&compId=IXFA(H%2CP)16N60P3.pdf?ci_sign=5bf62970bec965613ad22cf903e4c096360d3162 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO247-3
On-state resistance: 470mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
Produkt ist nicht verfügbar
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IXFH120N30X3 IXFH120N30X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBD406B0DCD8BF&compId=IXF_120N30X3_HV.pdf?ci_sign=44c2594b70f8a430a588605e95888b402a9a745c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 120A; 735W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 120A
Power dissipation: 735W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Technology: HiPerFET™; X3-Class
auf Bestellung 6 Stücke:
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4+20.41 EUR
5+14.73 EUR
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IXFH120N25T IXFH120N25T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC061820&compId=IXFH120N25T.pdf?ci_sign=794599a89c83b00c82e6901dab3e03a7b4e0dc23 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 890W; TO247-3; 108ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 108ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 7 Stücke:
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6+12.36 EUR
7+11.53 EUR
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MDD142-08N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB834B88367E20C4&compId=MDD142-08N1.pdf?ci_sign=82f8deb8816351787434df686089668623dcf373 Category: Diode modules
Description: Module: diode; double series; 800V; If: 165A; Y4-M6; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 165A
Case: Y4-M6
Max. forward voltage: 1.05V
Max. forward impulse current: 4.7kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXFA8N85XHV IXFA8N85XHV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A284EDE0DB0C5820&compId=IXFP(Q)8N85X_HV.pdf?ci_sign=a8e6404908a41fd6ea4d855574b806b2f1938c58 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 8A; Idm: 16A; 200W
Mounting: SMD
Case: TO263HV
On-state resistance: 0.85Ω
Drain current: 8A
Pulsed drain current: 16A
Gate-source voltage: ±30V
Power dissipation: 200W
Drain-source voltage: 850V
Kind of channel: enhancement
Technology: HiPerFET™; X-Class
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 17nC
Reverse recovery time: 125ns
auf Bestellung 31 Stücke:
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10+7.18 EUR
12+6.01 EUR
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IXFY4N85X IXFY4N85X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4F1EA58927820&compId=IXFA(P%2CY)4N85X.pdf?ci_sign=ac7ec9ad54f7266b7370f6dc839c56f4f0e65db5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 3.5A; Idm: 10A; 150W
Mounting: SMD
Case: TO252
On-state resistance: 2.5Ω
Drain current: 3.5A
Pulsed drain current: 10A
Gate-source voltage: ±30V
Power dissipation: 150W
Drain-source voltage: 850V
Kind of channel: enhancement
Technology: HiPerFET™; X-Class
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Gate charge: 7nC
Reverse recovery time: 170ns
auf Bestellung 6 Stücke:
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6+11.91 EUR
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IXFA4N85X IXFA4N85X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4F1EA58927820&compId=IXFA(P%2CY)4N85X.pdf?ci_sign=ac7ec9ad54f7266b7370f6dc839c56f4f0e65db5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 3.5A; Idm: 10A; 150W
Mounting: SMD
Case: TO263
On-state resistance: 2.5Ω
Drain current: 3.5A
Pulsed drain current: 10A
Gate-source voltage: ±30V
Power dissipation: 150W
Drain-source voltage: 850V
Kind of channel: enhancement
Technology: HiPerFET™; X-Class
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Gate charge: 7nC
Reverse recovery time: 170ns
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.16 EUR
37+1.94 EUR
39+1.84 EUR
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IXFA14N85XHV IXFA14N85XHV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDFF759EEC3820&compId=IXFA(H%2CP)14N85X_HV.pdf?ci_sign=311d18c4704f893c40442fc3d7e538bb64ecd1fb Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 460W; TO263HV; 116ns
Mounting: SMD
Case: TO263HV
On-state resistance: 0.55Ω
Drain current: 14A
Power dissipation: 460W
Drain-source voltage: 850V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Gate charge: 30nC
Reverse recovery time: 116ns
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IXFA20N85XHV IXFA20N85XHV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7D2BF5BAE38BF&compId=IXFA20N85XHV.pdf?ci_sign=81d9ba09897f60f2974f4faff6b6192eda367229 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 20A; 540W; TO263
Mounting: SMD
Case: TO263
On-state resistance: 0.33Ω
Drain current: 20A
Gate-source voltage: ±30V
Power dissipation: 540W
Drain-source voltage: 850V
Kind of channel: enhancement
Technology: HiPerFET™; X-Class
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 63nC
Reverse recovery time: 190ns
Produkt ist nicht verfügbar
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IXFT40N85XHV IXFT40N85XHV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A00561D2379820&compId=IXFT40N85X.PDF?ci_sign=17b8d459553279811895159364e457a57b9a6562 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 40A; 860W; TO268HV; 200ns
Mounting: SMD
Case: TO268HV
On-state resistance: 0.145Ω
Drain current: 40A
Power dissipation: 860W
Drain-source voltage: 850V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Gate charge: 98nC
Reverse recovery time: 200ns
Produkt ist nicht verfügbar
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IXYY8N90C3 IXYY8N90C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA8BDD5D271820&compId=IXYP(y)8N90C3.pdf?ci_sign=87d38d8134be933eddf2b12248973e933ae93bed Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO252
Type of transistor: IGBT
Power dissipation: 125W
Case: TO252
Mounting: SMD
Gate charge: 13.3nC
Kind of package: tube
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Turn-on time: 39ns
Turn-off time: 238ns
Collector current: 8A
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
auf Bestellung 350 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.46 EUR
25+3.42 EUR
70+2.56 EUR
140+2.22 EUR
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IXYP8N90C3D1 IXYP8N90C3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA81152D6A3820&compId=IXYA(P)8N90C3D1.pdf?ci_sign=c7b8202f446f82c0bef2c4432c38a5e99932308d Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Mounting: THT
Case: TO220-3
Kind of package: tube
Gate charge: 13.3nC
Turn-on time: 39ns
Turn-off time: 238ns
Collector current: 8A
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Power dissipation: 125W
auf Bestellung 126 Stücke:
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16+4.52 EUR
18+4.06 EUR
20+3.59 EUR
50+3.23 EUR
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IXYP8N90C3 IXYP8N90C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA8BDD5D271820&compId=IXYP(y)8N90C3.pdf?ci_sign=87d38d8134be933eddf2b12248973e933ae93bed Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Mounting: THT
Case: TO220-3
Kind of package: tube
Gate charge: 13.3nC
Turn-on time: 39ns
Turn-off time: 238ns
Collector current: 8A
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Power dissipation: 125W
Produkt ist nicht verfügbar
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IXYA8N90C3D1 IXYA8N90C3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA81152D6A3820&compId=IXYA(P)8N90C3D1.pdf?ci_sign=c7b8202f446f82c0bef2c4432c38a5e99932308d Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO263
Type of transistor: IGBT
Power dissipation: 125W
Case: TO263
Mounting: SMD
Gate charge: 13.3nC
Kind of package: tube
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Turn-on time: 39ns
Turn-off time: 238ns
Collector current: 8A
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Produkt ist nicht verfügbar
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IXFH18N90P IXFH18N90P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDED315747B820&compId=IXFH(T%2CV)18N90P_S.pdf?ci_sign=6b536d99f033869bf3dd648e0658e04c48509b89 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 18A; 540W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 18A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DLA100B1200LB-TUB DLA100B1200LB-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA87FF8D2A340060C4&compId=DLA100B1200LB.pdf?ci_sign=6296754d046772e4fd96965d73e1d8054b583293 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 124A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 124A
Max. forward impulse current: 0.4kA
Case: SMPD-B
Electrical mounting: SMT
Kind of package: tube
Max. forward voltage: 1.23V
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
4+21.36 EUR
20+21.06 EUR
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IXTT24P20 IXTT24P20 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA012B7501098BF&compId=IXT_24P20.pdf?ci_sign=7205947c30c99ec8834ade2f2c88d0a2a265662f Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -24A; 300W; TO268; 250ns
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: tube
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -24A
Gate charge: 150nC
Reverse recovery time: 250ns
On-state resistance: 0.15Ω
Power dissipation: 300W
Gate-source voltage: ±20V
Case: TO268
auf Bestellung 183 Stücke:
Lieferzeit 14-21 Tag (e)
6+13.99 EUR
7+10.64 EUR
8+10.05 EUR
30+9.67 EUR
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IXFK220N20X3 IXFK220N20X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBA1A126E3F8BF&compId=IXF_220N20X3_HV.pdf?ci_sign=5f237aaca4b9ebf80eb09fb21e52fd45391ea24c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO264
Case: TO264
Mounting: THT
Gate-source voltage: ±20V
Gate charge: 204nC
Reverse recovery time: 116ns
On-state resistance: 6.2mΩ
Drain current: 220A
Power dissipation: 960W
Drain-source voltage: 200V
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Type of transistor: N-MOSFET
auf Bestellung 44 Stücke:
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4+18.76 EUR
10+16.99 EUR
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IXFT220N20X3HV IXFT220N20X3HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBA1A126E3F8BF&compId=IXF_220N20X3_HV.pdf?ci_sign=5f237aaca4b9ebf80eb09fb21e52fd45391ea24c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO268
Case: TO268
Mounting: SMD
Gate-source voltage: ±20V
Gate charge: 204nC
Reverse recovery time: 116ns
On-state resistance: 6.2mΩ
Drain current: 220A
Power dissipation: 960W
Drain-source voltage: 200V
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Type of transistor: N-MOSFET
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IXFH220N20X3 IXFH220N20X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBA1A126E3F8BF&compId=IXF_220N20X3_HV.pdf?ci_sign=5f237aaca4b9ebf80eb09fb21e52fd45391ea24c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO247-3
Case: TO247-3
Mounting: THT
Gate-source voltage: ±20V
Gate charge: 204nC
Reverse recovery time: 116ns
On-state resistance: 6.2mΩ
Drain current: 220A
Power dissipation: 960W
Drain-source voltage: 200V
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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MEA250-12DA IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode modules
Description: Module: diode; common anode; 1.2kV; If: 260A; Y4-M6; Ufmax: 1.54V
Type of semiconductor module: diode
Semiconductor structure: common anode
Max. off-state voltage: 1.2kV
Load current: 260A
Case: Y4-M6
Max. forward voltage: 1.54V
Max. forward impulse current: 2.4kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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XAA117S XAA117S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F36C0C7&compId=XAA117.pdf?ci_sign=77132553ff3a4f20566f562d6dd863227af09005 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 16Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
auf Bestellung 250 Stücke:
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50+2.72 EUR
250+2.17 EUR
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XAA117P XAA117P IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F36C0C7&compId=XAA117.pdf?ci_sign=77132553ff3a4f20566f562d6dd863227af09005 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 16Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
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XAA117 XAA117 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F36C0C7&compId=XAA117.pdf?ci_sign=77132553ff3a4f20566f562d6dd863227af09005 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 16Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
auf Bestellung 210 Stücke:
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50+2.72 EUR
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XAA117PTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F36C0C7&compId=XAA117.pdf?ci_sign=77132553ff3a4f20566f562d6dd863227af09005 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 16Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
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XAA117STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F36C0C7&compId=XAA117.pdf?ci_sign=77132553ff3a4f20566f562d6dd863227af09005 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 16Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
Produkt ist nicht verfügbar
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IXGA30N120B3 IXGA30N120B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAC94053C44F820&compId=IXGA(H%2CP)30N120B3.pdf?ci_sign=bccf7f842442b5dd94ada4fd3560ea2bc2b9462c Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO263
Mounting: SMD
Gate charge: 87nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 150A
Collector-emitter voltage: 1.2kV
Turn-on time: 56ns
Turn-off time: 471ns
Produkt ist nicht verfügbar
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IXYH30N120C3 IXYH30N120C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE992C98A5CE08E38BF&compId=IXY_30N120C3.pdf?ci_sign=b4f4a8cdbbd63e273835ab59b6781e01c99521ae Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 500W
Case: TO247-3
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 145A
Collector-emitter voltage: 1.2kV
Turn-on time: 71ns
Turn-off time: 296ns
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IXFN30N120P IXFN30N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA839D0576CD820&compId=IXFN30N120P.pdf?ci_sign=3c2a02af2466d777f644912c92670b8e0f9fb4b3 Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 30A; SOT227B; screw; Idm: 75A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 890W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.35Ω
Gate charge: 310nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Semiconductor structure: single transistor
Electrical mounting: screw
Produkt ist nicht verfügbar
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IXFB30N120P IXFB30N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED471DAC7962A18&compId=IXFB30N120P.pdf?ci_sign=6747945f68e4b9f5a1fcbc7994466499b2c08e0b Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 30A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
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IXGT30N120B3D1 IXGT30N120B3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DACA06EEB189820&compId=IXGH(t)30N120B3D1.pdf?ci_sign=f005ac054c26db1cc4211835ea92d6b297ff6ef3 Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO268
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO268
Mounting: SMD
Gate charge: 87nC
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Turn-off time: 471ns
Turn-on time: 56ns
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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IXYH30N120C3D1 IXYH30N120C3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DACAFCD3B665820&compId=IXYH30N120C3D1.pdf?ci_sign=bf46a6df4aae9941a3d72e05b9e26fc24022a6f1 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 416W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 416W
Case: TO247-3
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 133A
Collector-emitter voltage: 1.2kV
Turn-on time: 71ns
Turn-off time: 296ns
Produkt ist nicht verfügbar
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IXYP30N120C3 IXYP30N120C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE992C98A5CE08E38BF&compId=IXY_30N120C3.pdf?ci_sign=b4f4a8cdbbd63e273835ab59b6781e01c99521ae Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 500W
Case: TO220-3
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 145A
Collector-emitter voltage: 1.2kV
Turn-on time: 71ns
Turn-off time: 296ns
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IXA33IF1200HB IXA33IF1200HB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF1DEF404B5D8BF&compId=IXA33IF1200HB.pdf?ci_sign=02e291729e01b364bd485a7eae853dab33af3810 Category: THT IGBT transistors
Description: Transistor: IGBT; Sonic FRD™; 1.2kV; 34A; 250W; TO247-3
Type of transistor: IGBT
Technology: Sonic FRD™; XPT™
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 34A
Pulsed collector current: 75A
Collector-emitter voltage: 1.2kV
Turn-on time: 110ns
Turn-off time: 350ns
Produkt ist nicht verfügbar
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LOC111 LOC111 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ADC24256521EC&compId=LOC111.pdf?ci_sign=1f8aa93bca6adbd91241757e682fefbf101b05b2 Category: Optocouplers - others
Description: Optocoupler; THT; Ch: 1; OUT: photodiode; 3.75kV; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Insulation voltage: 3.75kV
Kind of output: photodiode
Case: DIP8
auf Bestellung 149 Stücke:
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19+3.9 EUR
31+2.35 EUR
33+2.22 EUR
100+2.19 EUR
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LOC111P LOC111P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ADC24256521EC&compId=LOC111.pdf?ci_sign=1f8aa93bca6adbd91241757e682fefbf101b05b2 Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Case: Flatpack 8pin
auf Bestellung 200 Stücke:
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30+2.45 EUR
31+2.32 EUR
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LOC111S LOC111S IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ADC24256521EC&compId=LOC111.pdf?ci_sign=1f8aa93bca6adbd91241757e682fefbf101b05b2 Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
auf Bestellung 5 Stücke:
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5+14.3 EUR
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LOC111PTR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ADC24256521EC&compId=LOC111.pdf?ci_sign=1f8aa93bca6adbd91241757e682fefbf101b05b2 Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Case: Flatpack 8pin
Produkt ist nicht verfügbar
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LOC111STR LOC111STR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ADC24256521EC&compId=LOC111.pdf?ci_sign=1f8aa93bca6adbd91241757e682fefbf101b05b2 Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Produkt ist nicht verfügbar
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LOC112 LOC112 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ADF4EA9EF01EC&compId=LOC112P.pdf?ci_sign=8cbac573205132593f6f59bb6199ad1903ebb2fb Category: Optocouplers - others
Description: Optocoupler; THT; Ch: 1; 3.75kV; DIP8; 1A
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Case: DIP8
Produkt ist nicht verfügbar
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LOC112S LOC112S IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ADF4EA9EF01EC&compId=LOC112P.pdf?ci_sign=8cbac573205132593f6f59bb6199ad1903ebb2fb Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Insulation voltage: 3.75kV
Trigger current: 1A
Mounting: SMD
Number of channels: 1
auf Bestellung 100 Stücke:
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20+3.6 EUR
24+3 EUR
27+2.7 EUR
100+2.45 EUR
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LOC112PTR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ADF4EA9EF01EC&compId=LOC112P.pdf?ci_sign=8cbac573205132593f6f59bb6199ad1903ebb2fb Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Case: Flatpack 8pin
Produkt ist nicht verfügbar
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LOC112STR LOC112STR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ADF4EA9EF01EC&compId=LOC112P.pdf?ci_sign=8cbac573205132593f6f59bb6199ad1903ebb2fb Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Produkt ist nicht verfügbar
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IXTP14N60PM IXTP14N60PM IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F1339820&compId=IXTP14N60PM.pdf?ci_sign=fe79afdb307ca615dc69964670973d4c6149b61e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 75W; TO220FP; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 75W
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: standard power mosfet
Produkt ist nicht verfügbar
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IXTP230N04T4M IXTP230N04T4M IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F1365820&compId=IXTP230N04T4M.pdf?ci_sign=027a29a87a204a8cf3033295a7b62dd3a81d9d5b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 40W; TO220FP; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 40W
Case: TO220FP
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 32ns
Produkt ist nicht verfügbar
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IXFP30N25X3 IXFP30N25X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC427F861F7820&compId=IXFA(P%2CY)30N25X3.pdf?ci_sign=ae8a69574c4f05e2b40aab94d30059204cd230fc Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO220AB; 82ns
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: ultra junction x-class
Gate charge: 21nC
Reverse recovery time: 82ns
On-state resistance: 60mΩ
Drain current: 30A
Power dissipation: 170W
Drain-source voltage: 250V
Polarisation: unipolar
Case: TO220AB
auf Bestellung 295 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.91 EUR
14+5.32 EUR
15+5.03 EUR
50+4.83 EUR
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IXFY30N25X3 IXFY30N25X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC427F861F7820&compId=IXFA(P%2CY)30N25X3.pdf?ci_sign=ae8a69574c4f05e2b40aab94d30059204cd230fc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO252; 82ns
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: ultra junction x-class
Gate charge: 21nC
Reverse recovery time: 82ns
On-state resistance: 60mΩ
Drain current: 30A
Power dissipation: 170W
Drain-source voltage: 250V
Polarisation: unipolar
Case: TO252
auf Bestellung 48 Stücke:
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13+5.62 EUR
15+4.82 EUR
25+4.63 EUR
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IXBN42N170A IXBN42N170A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2D30CCAF5B820&compId=IXBN42N170A.pdf?ci_sign=30d9a9716fcdb2ce03625600d5208415acafc420 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 21A; SOT227B
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Power dissipation: 313W
Collector current: 21A
Pulsed collector current: 265A
Gate-emitter voltage: ±20V
Technology: BiMOSFET™
Max. off-state voltage: 1.7kV
Features of semiconductor devices: high voltage
Type of semiconductor module: IGBT
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
2+43.5 EUR
Mindestbestellmenge: 2
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IXBN75N170A IXBN75N170A IXYS 98938.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 42A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
Collector current: 42A
Case: SOT227B
Application: for UPS; motors
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mechanical mounting: screw
Power dissipation: 500W
Technology: BiMOSFET™
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
1+75.73 EUR
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IXBT10N170 IXBT10N170 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAE78C511FA9820&compId=IXBH(T)10N170.pdf?ci_sign=0c9673a4b5e2be6f1c4996b39032c9983fb1a0e9 Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 140W; TO268
Case: TO268
Mounting: SMD
Kind of package: tube
Gate charge: 30nC
Turn-on time: 63ns
Turn-off time: 1.8µs
Power dissipation: 140W
Collector current: 10A
Pulsed collector current: 40A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Type of transistor: IGBT
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.44 EUR
8+9.5 EUR
Mindestbestellmenge: 7
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IXBN75N170 IXBN75N170 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2D74FFDFA3820&compId=IXBN75N170.pdf?ci_sign=c30080eb6a1443654b906ca9270234eddb862b5e Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 75A; SOT227B
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Power dissipation: 625W
Collector current: 75A
Pulsed collector current: 680A
Gate-emitter voltage: ±20V
Technology: BiMOSFET™
Max. off-state voltage: 1.7kV
Features of semiconductor devices: high voltage
Type of semiconductor module: IGBT
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+114.07 EUR
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IXBA16N170AHV IXBA16N170AHV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AD01F9B98FE5820&compId=IXBA16N170AHV.pdf?ci_sign=95336b0cb3303bf228c8eebd741f5683b4c5f35c Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO263
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 65nC
Turn-on time: 43ns
Turn-off time: 370ns
Power dissipation: 150W
Collector current: 10A
Pulsed collector current: 40A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Type of transistor: IGBT
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
3+24.81 EUR
Mindestbestellmenge: 3
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IXBX75N170A IXBX75N170A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAFC0C39CA5B820&compId=IXBX75N170A.pdf?ci_sign=d10657b8b2b4f9db7853bcb3369954eba2738585 Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 65A; 1.04kW; PLUS247™
Case: PLUS247™
Mounting: THT
Kind of package: tube
Gate charge: 358nC
Turn-on time: 65ns
Turn-off time: 595ns
Power dissipation: 1.04kW
Collector current: 65A
Pulsed collector current: 300A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Type of transistor: IGBT
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
3+33.91 EUR
Mindestbestellmenge: 3
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IXFN170N30P IXFN170N30P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF9154090911820&compId=IXFN170N30P.pdf?ci_sign=6fff5064feb5b36e4646b3f05f49d502ebb4e4c6 Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 138A; SOT227B; screw; Idm: 500A
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Pulsed drain current: 500A
Drain current: 138A
Drain-source voltage: 300V
Gate charge: 258nC
Reverse recovery time: 200ns
On-state resistance: 18mΩ
Power dissipation: 890W
Gate-source voltage: ±30V
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
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IXFN170N25X3 IXFN170N25X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF8EB1997F13820&compId=IXFN170N25X3.pdf?ci_sign=5b8a8b6c9997bd914a1a3f0448d61fde4b0f215b Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 146A; SOT227B; screw; Idm: 400A
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Pulsed drain current: 400A
Drain current: 146A
Drain-source voltage: 250V
Gate charge: 0.19µC
Reverse recovery time: 135ns
On-state resistance: 7.4mΩ
Power dissipation: 390W
Gate-source voltage: ±30V
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
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DSEP29-12A pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD59D0904DFD8BF&compId=DSEP29-12A.pdf?ci_sign=52e4f654c53702ba952ecba83e74d2eda922abbb
DSEP29-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO220AC; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO220AC
Max. forward voltage: 1.81V
Power dissipation: 165W
Reverse recovery time: 40ns
Technology: HiPerFRED™
auf Bestellung 197 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.18 EUR
22+3.26 EUR
Mindestbestellmenge: 14
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DSI30-12A pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFEECF6943966143&compId=DSI30-12A.pdf?ci_sign=f9a445f10c0aa8da27c3439715f2c7bf4e306c19
DSI30-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 300A; TO220AC; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.25V
Max. forward impulse current: 0.3kA
Power dissipation: 160W
Kind of package: tube
auf Bestellung 148 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.26 EUR
37+1.94 EUR
39+1.84 EUR
100+1.77 EUR
Mindestbestellmenge: 22
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MDD142-12N1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB834FBC6AAC00C4&compId=MDD142-12N1.pdf?ci_sign=e60450221a50dc38006779b9dcd279ebaf641ce1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 165A; Y4-M6; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.05V
Load current: 165A
Max. forward impulse current: 4.7kA
Max. off-state voltage: 1.2kV
Case: Y4-M6
Produkt ist nicht verfügbar
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DMA30P1600HR pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB4530BDDF9C0C4&compId=DMA30P1600HR.pdf?ci_sign=353bf02d8c968b714b88bc63f36a7db07a0987a9
DMA30P1600HR
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 30A; tube; Ifsm: 255A; ISO247™; 115W
Kind of package: tube
Case: ISO247™
Semiconductor structure: double series
Type of diode: rectifying
Mounting: THT
Max. forward voltage: 1.23V
Power dissipation: 115W
Max. forward impulse current: 255A
Load current: 30A
Max. off-state voltage: 1.6kV
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.41 EUR
9+8.18 EUR
10+7.74 EUR
Mindestbestellmenge: 7
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MCMA140P1600TA pVersion=0046&contRep=ZT&docId=005056AB82531EE98EB69BB909ED18BF&compId=MCMA140P1600TA.pdf?ci_sign=b12199e01ae05027ecc8d6bac32e78da8a23126a pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
MCMA140P1600TA
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 140A; TO240AA; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.28V
Max. forward impulse current: 2.04kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 150/200mA
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+46.52 EUR
5+45.27 EUR
Mindestbestellmenge: 2
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IXFH16N60P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D52E81740A5820&compId=IXFA(H%2CP)16N60P3.pdf?ci_sign=5bf62970bec965613ad22cf903e4c096360d3162
IXFH16N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO247-3
On-state resistance: 470mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
Produkt ist nicht verfügbar
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IXFH120N30X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBD406B0DCD8BF&compId=IXF_120N30X3_HV.pdf?ci_sign=44c2594b70f8a430a588605e95888b402a9a745c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c
IXFH120N30X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 120A; 735W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 120A
Power dissipation: 735W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Technology: HiPerFET™; X3-Class
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+20.41 EUR
5+14.73 EUR
Mindestbestellmenge: 4
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IXFH120N25T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC061820&compId=IXFH120N25T.pdf?ci_sign=794599a89c83b00c82e6901dab3e03a7b4e0dc23
IXFH120N25T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 890W; TO247-3; 108ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 108ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.36 EUR
7+11.53 EUR
Mindestbestellmenge: 6
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MDD142-08N1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB834B88367E20C4&compId=MDD142-08N1.pdf?ci_sign=82f8deb8816351787434df686089668623dcf373
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 800V; If: 165A; Y4-M6; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 165A
Case: Y4-M6
Max. forward voltage: 1.05V
Max. forward impulse current: 4.7kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXFA8N85XHV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A284EDE0DB0C5820&compId=IXFP(Q)8N85X_HV.pdf?ci_sign=a8e6404908a41fd6ea4d855574b806b2f1938c58
IXFA8N85XHV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 8A; Idm: 16A; 200W
Mounting: SMD
Case: TO263HV
On-state resistance: 0.85Ω
Drain current: 8A
Pulsed drain current: 16A
Gate-source voltage: ±30V
Power dissipation: 200W
Drain-source voltage: 850V
Kind of channel: enhancement
Technology: HiPerFET™; X-Class
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 17nC
Reverse recovery time: 125ns
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.18 EUR
12+6.01 EUR
Mindestbestellmenge: 10
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IXFY4N85X pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4F1EA58927820&compId=IXFA(P%2CY)4N85X.pdf?ci_sign=ac7ec9ad54f7266b7370f6dc839c56f4f0e65db5
IXFY4N85X
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 3.5A; Idm: 10A; 150W
Mounting: SMD
Case: TO252
On-state resistance: 2.5Ω
Drain current: 3.5A
Pulsed drain current: 10A
Gate-source voltage: ±30V
Power dissipation: 150W
Drain-source voltage: 850V
Kind of channel: enhancement
Technology: HiPerFET™; X-Class
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Gate charge: 7nC
Reverse recovery time: 170ns
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+11.91 EUR
Mindestbestellmenge: 6
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IXFA4N85X pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4F1EA58927820&compId=IXFA(P%2CY)4N85X.pdf?ci_sign=ac7ec9ad54f7266b7370f6dc839c56f4f0e65db5
IXFA4N85X
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 3.5A; Idm: 10A; 150W
Mounting: SMD
Case: TO263
On-state resistance: 2.5Ω
Drain current: 3.5A
Pulsed drain current: 10A
Gate-source voltage: ±30V
Power dissipation: 150W
Drain-source voltage: 850V
Kind of channel: enhancement
Technology: HiPerFET™; X-Class
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Gate charge: 7nC
Reverse recovery time: 170ns
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.16 EUR
37+1.94 EUR
39+1.84 EUR
Mindestbestellmenge: 18
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IXFA14N85XHV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDFF759EEC3820&compId=IXFA(H%2CP)14N85X_HV.pdf?ci_sign=311d18c4704f893c40442fc3d7e538bb64ecd1fb
IXFA14N85XHV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 460W; TO263HV; 116ns
Mounting: SMD
Case: TO263HV
On-state resistance: 0.55Ω
Drain current: 14A
Power dissipation: 460W
Drain-source voltage: 850V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Gate charge: 30nC
Reverse recovery time: 116ns
Produkt ist nicht verfügbar
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IXFA20N85XHV pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7D2BF5BAE38BF&compId=IXFA20N85XHV.pdf?ci_sign=81d9ba09897f60f2974f4faff6b6192eda367229
IXFA20N85XHV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 20A; 540W; TO263
Mounting: SMD
Case: TO263
On-state resistance: 0.33Ω
Drain current: 20A
Gate-source voltage: ±30V
Power dissipation: 540W
Drain-source voltage: 850V
Kind of channel: enhancement
Technology: HiPerFET™; X-Class
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 63nC
Reverse recovery time: 190ns
Produkt ist nicht verfügbar
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IXFT40N85XHV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A00561D2379820&compId=IXFT40N85X.PDF?ci_sign=17b8d459553279811895159364e457a57b9a6562
IXFT40N85XHV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 40A; 860W; TO268HV; 200ns
Mounting: SMD
Case: TO268HV
On-state resistance: 0.145Ω
Drain current: 40A
Power dissipation: 860W
Drain-source voltage: 850V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Gate charge: 98nC
Reverse recovery time: 200ns
Produkt ist nicht verfügbar
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IXYY8N90C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA8BDD5D271820&compId=IXYP(y)8N90C3.pdf?ci_sign=87d38d8134be933eddf2b12248973e933ae93bed
IXYY8N90C3
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO252
Type of transistor: IGBT
Power dissipation: 125W
Case: TO252
Mounting: SMD
Gate charge: 13.3nC
Kind of package: tube
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Turn-on time: 39ns
Turn-off time: 238ns
Collector current: 8A
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
auf Bestellung 350 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.46 EUR
25+3.42 EUR
70+2.56 EUR
140+2.22 EUR
Mindestbestellmenge: 17
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IXYP8N90C3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA81152D6A3820&compId=IXYA(P)8N90C3D1.pdf?ci_sign=c7b8202f446f82c0bef2c4432c38a5e99932308d
IXYP8N90C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Mounting: THT
Case: TO220-3
Kind of package: tube
Gate charge: 13.3nC
Turn-on time: 39ns
Turn-off time: 238ns
Collector current: 8A
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Power dissipation: 125W
auf Bestellung 126 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.52 EUR
18+4.06 EUR
20+3.59 EUR
50+3.23 EUR
Mindestbestellmenge: 16
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IXYP8N90C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA8BDD5D271820&compId=IXYP(y)8N90C3.pdf?ci_sign=87d38d8134be933eddf2b12248973e933ae93bed
IXYP8N90C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Mounting: THT
Case: TO220-3
Kind of package: tube
Gate charge: 13.3nC
Turn-on time: 39ns
Turn-off time: 238ns
Collector current: 8A
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Power dissipation: 125W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYA8N90C3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA81152D6A3820&compId=IXYA(P)8N90C3D1.pdf?ci_sign=c7b8202f446f82c0bef2c4432c38a5e99932308d
IXYA8N90C3D1
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO263
Type of transistor: IGBT
Power dissipation: 125W
Case: TO263
Mounting: SMD
Gate charge: 13.3nC
Kind of package: tube
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Turn-on time: 39ns
Turn-off time: 238ns
Collector current: 8A
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Produkt ist nicht verfügbar
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IXFH18N90P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDED315747B820&compId=IXFH(T%2CV)18N90P_S.pdf?ci_sign=6b536d99f033869bf3dd648e0658e04c48509b89
IXFH18N90P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 18A; 540W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 18A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DLA100B1200LB-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41EDA87FF8D2A340060C4&compId=DLA100B1200LB.pdf?ci_sign=6296754d046772e4fd96965d73e1d8054b583293
DLA100B1200LB-TUB
Hersteller: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 124A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 124A
Max. forward impulse current: 0.4kA
Case: SMPD-B
Electrical mounting: SMT
Kind of package: tube
Max. forward voltage: 1.23V
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+21.36 EUR
20+21.06 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXTT24P20 pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA012B7501098BF&compId=IXT_24P20.pdf?ci_sign=7205947c30c99ec8834ade2f2c88d0a2a265662f
IXTT24P20
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -24A; 300W; TO268; 250ns
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: tube
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -24A
Gate charge: 150nC
Reverse recovery time: 250ns
On-state resistance: 0.15Ω
Power dissipation: 300W
Gate-source voltage: ±20V
Case: TO268
auf Bestellung 183 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.99 EUR
7+10.64 EUR
8+10.05 EUR
30+9.67 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IXFK220N20X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBA1A126E3F8BF&compId=IXF_220N20X3_HV.pdf?ci_sign=5f237aaca4b9ebf80eb09fb21e52fd45391ea24c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b
IXFK220N20X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO264
Case: TO264
Mounting: THT
Gate-source voltage: ±20V
Gate charge: 204nC
Reverse recovery time: 116ns
On-state resistance: 6.2mΩ
Drain current: 220A
Power dissipation: 960W
Drain-source voltage: 200V
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Type of transistor: N-MOSFET
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.76 EUR
10+16.99 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXFT220N20X3HV pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBA1A126E3F8BF&compId=IXF_220N20X3_HV.pdf?ci_sign=5f237aaca4b9ebf80eb09fb21e52fd45391ea24c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b
IXFT220N20X3HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO268
Case: TO268
Mounting: SMD
Gate-source voltage: ±20V
Gate charge: 204nC
Reverse recovery time: 116ns
On-state resistance: 6.2mΩ
Drain current: 220A
Power dissipation: 960W
Drain-source voltage: 200V
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IXFH220N20X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBA1A126E3F8BF&compId=IXF_220N20X3_HV.pdf?ci_sign=5f237aaca4b9ebf80eb09fb21e52fd45391ea24c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b
IXFH220N20X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO247-3
Case: TO247-3
Mounting: THT
Gate-source voltage: ±20V
Gate charge: 204nC
Reverse recovery time: 116ns
On-state resistance: 6.2mΩ
Drain current: 220A
Power dissipation: 960W
Drain-source voltage: 200V
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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MEA250-12DA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; common anode; 1.2kV; If: 260A; Y4-M6; Ufmax: 1.54V
Type of semiconductor module: diode
Semiconductor structure: common anode
Max. off-state voltage: 1.2kV
Load current: 260A
Case: Y4-M6
Max. forward voltage: 1.54V
Max. forward impulse current: 2.4kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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XAA117S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F36C0C7&compId=XAA117.pdf?ci_sign=77132553ff3a4f20566f562d6dd863227af09005
XAA117S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 16Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.13 EUR
50+2.72 EUR
250+2.17 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
XAA117P pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F36C0C7&compId=XAA117.pdf?ci_sign=77132553ff3a4f20566f562d6dd863227af09005
XAA117P
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 16Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
auf Bestellung 243 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.13 EUR
50+2.72 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
XAA117 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F36C0C7&compId=XAA117.pdf?ci_sign=77132553ff3a4f20566f562d6dd863227af09005
XAA117
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 16Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
auf Bestellung 210 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.13 EUR
50+2.72 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
XAA117PTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F36C0C7&compId=XAA117.pdf?ci_sign=77132553ff3a4f20566f562d6dd863227af09005
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 16Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XAA117STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F36C0C7&compId=XAA117.pdf?ci_sign=77132553ff3a4f20566f562d6dd863227af09005
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 16Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
Produkt ist nicht verfügbar
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IXGA30N120B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAC94053C44F820&compId=IXGA(H%2CP)30N120B3.pdf?ci_sign=bccf7f842442b5dd94ada4fd3560ea2bc2b9462c
IXGA30N120B3
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO263
Mounting: SMD
Gate charge: 87nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 150A
Collector-emitter voltage: 1.2kV
Turn-on time: 56ns
Turn-off time: 471ns
Produkt ist nicht verfügbar
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IXYH30N120C3 pVersion=0046&contRep=ZT&docId=005056AB82531EE992C98A5CE08E38BF&compId=IXY_30N120C3.pdf?ci_sign=b4f4a8cdbbd63e273835ab59b6781e01c99521ae
IXYH30N120C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 500W
Case: TO247-3
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 145A
Collector-emitter voltage: 1.2kV
Turn-on time: 71ns
Turn-off time: 296ns
Produkt ist nicht verfügbar
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IXFN30N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA839D0576CD820&compId=IXFN30N120P.pdf?ci_sign=3c2a02af2466d777f644912c92670b8e0f9fb4b3
IXFN30N120P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 30A; SOT227B; screw; Idm: 75A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 890W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.35Ω
Gate charge: 310nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Semiconductor structure: single transistor
Electrical mounting: screw
Produkt ist nicht verfügbar
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IXFB30N120P pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED471DAC7962A18&compId=IXFB30N120P.pdf?ci_sign=6747945f68e4b9f5a1fcbc7994466499b2c08e0b
IXFB30N120P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 30A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
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IXGT30N120B3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DACA06EEB189820&compId=IXGH(t)30N120B3D1.pdf?ci_sign=f005ac054c26db1cc4211835ea92d6b297ff6ef3
IXGT30N120B3D1
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO268
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO268
Mounting: SMD
Gate charge: 87nC
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Turn-off time: 471ns
Turn-on time: 56ns
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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IXYH30N120C3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DACAFCD3B665820&compId=IXYH30N120C3D1.pdf?ci_sign=bf46a6df4aae9941a3d72e05b9e26fc24022a6f1
IXYH30N120C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 416W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 416W
Case: TO247-3
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 133A
Collector-emitter voltage: 1.2kV
Turn-on time: 71ns
Turn-off time: 296ns
Produkt ist nicht verfügbar
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IXYP30N120C3 pVersion=0046&contRep=ZT&docId=005056AB82531EE992C98A5CE08E38BF&compId=IXY_30N120C3.pdf?ci_sign=b4f4a8cdbbd63e273835ab59b6781e01c99521ae
IXYP30N120C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 500W
Case: TO220-3
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 145A
Collector-emitter voltage: 1.2kV
Turn-on time: 71ns
Turn-off time: 296ns
Produkt ist nicht verfügbar
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IXA33IF1200HB pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF1DEF404B5D8BF&compId=IXA33IF1200HB.pdf?ci_sign=02e291729e01b364bd485a7eae853dab33af3810
IXA33IF1200HB
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; Sonic FRD™; 1.2kV; 34A; 250W; TO247-3
Type of transistor: IGBT
Technology: Sonic FRD™; XPT™
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 34A
Pulsed collector current: 75A
Collector-emitter voltage: 1.2kV
Turn-on time: 110ns
Turn-off time: 350ns
Produkt ist nicht verfügbar
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LOC111 pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ADC24256521EC&compId=LOC111.pdf?ci_sign=1f8aa93bca6adbd91241757e682fefbf101b05b2
LOC111
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; THT; Ch: 1; OUT: photodiode; 3.75kV; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Insulation voltage: 3.75kV
Kind of output: photodiode
Case: DIP8
auf Bestellung 149 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.9 EUR
31+2.35 EUR
33+2.22 EUR
100+2.19 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
LOC111P pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ADC24256521EC&compId=LOC111.pdf?ci_sign=1f8aa93bca6adbd91241757e682fefbf101b05b2
LOC111P
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Case: Flatpack 8pin
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.27 EUR
30+2.45 EUR
31+2.32 EUR
100+2.29 EUR
Mindestbestellmenge: 22
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LOC111S pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ADC24256521EC&compId=LOC111.pdf?ci_sign=1f8aa93bca6adbd91241757e682fefbf101b05b2
LOC111S
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.3 EUR
Mindestbestellmenge: 5
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LOC111PTR pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ADC24256521EC&compId=LOC111.pdf?ci_sign=1f8aa93bca6adbd91241757e682fefbf101b05b2
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Case: Flatpack 8pin
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LOC111STR pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ADC24256521EC&compId=LOC111.pdf?ci_sign=1f8aa93bca6adbd91241757e682fefbf101b05b2
LOC111STR
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Produkt ist nicht verfügbar
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LOC112 pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ADF4EA9EF01EC&compId=LOC112P.pdf?ci_sign=8cbac573205132593f6f59bb6199ad1903ebb2fb
LOC112
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; THT; Ch: 1; 3.75kV; DIP8; 1A
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Case: DIP8
Produkt ist nicht verfügbar
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LOC112S pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ADF4EA9EF01EC&compId=LOC112P.pdf?ci_sign=8cbac573205132593f6f59bb6199ad1903ebb2fb
LOC112S
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Insulation voltage: 3.75kV
Trigger current: 1A
Mounting: SMD
Number of channels: 1
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.6 EUR
24+3 EUR
27+2.7 EUR
100+2.45 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
LOC112PTR pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ADF4EA9EF01EC&compId=LOC112P.pdf?ci_sign=8cbac573205132593f6f59bb6199ad1903ebb2fb
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Case: Flatpack 8pin
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LOC112STR pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ADF4EA9EF01EC&compId=LOC112P.pdf?ci_sign=8cbac573205132593f6f59bb6199ad1903ebb2fb
LOC112STR
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTP14N60PM pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F1339820&compId=IXTP14N60PM.pdf?ci_sign=fe79afdb307ca615dc69964670973d4c6149b61e
IXTP14N60PM
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 75W; TO220FP; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 75W
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: standard power mosfet
Produkt ist nicht verfügbar
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IXTP230N04T4M pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F1365820&compId=IXTP230N04T4M.pdf?ci_sign=027a29a87a204a8cf3033295a7b62dd3a81d9d5b
IXTP230N04T4M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 40W; TO220FP; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 40W
Case: TO220FP
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 32ns
Produkt ist nicht verfügbar
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IXFP30N25X3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC427F861F7820&compId=IXFA(P%2CY)30N25X3.pdf?ci_sign=ae8a69574c4f05e2b40aab94d30059204cd230fc
IXFP30N25X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO220AB; 82ns
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: ultra junction x-class
Gate charge: 21nC
Reverse recovery time: 82ns
On-state resistance: 60mΩ
Drain current: 30A
Power dissipation: 170W
Drain-source voltage: 250V
Polarisation: unipolar
Case: TO220AB
auf Bestellung 295 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.91 EUR
14+5.32 EUR
15+5.03 EUR
50+4.83 EUR
Mindestbestellmenge: 10
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IXFY30N25X3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC427F861F7820&compId=IXFA(P%2CY)30N25X3.pdf?ci_sign=ae8a69574c4f05e2b40aab94d30059204cd230fc
IXFY30N25X3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO252; 82ns
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: ultra junction x-class
Gate charge: 21nC
Reverse recovery time: 82ns
On-state resistance: 60mΩ
Drain current: 30A
Power dissipation: 170W
Drain-source voltage: 250V
Polarisation: unipolar
Case: TO252
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.62 EUR
15+4.82 EUR
25+4.63 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IXBN42N170A pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2D30CCAF5B820&compId=IXBN42N170A.pdf?ci_sign=30d9a9716fcdb2ce03625600d5208415acafc420
IXBN42N170A
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 21A; SOT227B
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Power dissipation: 313W
Collector current: 21A
Pulsed collector current: 265A
Gate-emitter voltage: ±20V
Technology: BiMOSFET™
Max. off-state voltage: 1.7kV
Features of semiconductor devices: high voltage
Type of semiconductor module: IGBT
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+43.5 EUR
Mindestbestellmenge: 2
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IXBN75N170A 98938.pdf
IXBN75N170A
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 42A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
Collector current: 42A
Case: SOT227B
Application: for UPS; motors
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mechanical mounting: screw
Power dissipation: 500W
Technology: BiMOSFET™
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+75.73 EUR
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IXBT10N170 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAE78C511FA9820&compId=IXBH(T)10N170.pdf?ci_sign=0c9673a4b5e2be6f1c4996b39032c9983fb1a0e9
IXBT10N170
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 140W; TO268
Case: TO268
Mounting: SMD
Kind of package: tube
Gate charge: 30nC
Turn-on time: 63ns
Turn-off time: 1.8µs
Power dissipation: 140W
Collector current: 10A
Pulsed collector current: 40A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Type of transistor: IGBT
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.44 EUR
8+9.5 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXBN75N170 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2D74FFDFA3820&compId=IXBN75N170.pdf?ci_sign=c30080eb6a1443654b906ca9270234eddb862b5e
IXBN75N170
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 75A; SOT227B
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Power dissipation: 625W
Collector current: 75A
Pulsed collector current: 680A
Gate-emitter voltage: ±20V
Technology: BiMOSFET™
Max. off-state voltage: 1.7kV
Features of semiconductor devices: high voltage
Type of semiconductor module: IGBT
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+114.07 EUR
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IXBA16N170AHV pVersion=0046&contRep=ZT&docId=005056AB82531ED99AD01F9B98FE5820&compId=IXBA16N170AHV.pdf?ci_sign=95336b0cb3303bf228c8eebd741f5683b4c5f35c
IXBA16N170AHV
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO263
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 65nC
Turn-on time: 43ns
Turn-off time: 370ns
Power dissipation: 150W
Collector current: 10A
Pulsed collector current: 40A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Type of transistor: IGBT
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+24.81 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IXBX75N170A pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAFC0C39CA5B820&compId=IXBX75N170A.pdf?ci_sign=d10657b8b2b4f9db7853bcb3369954eba2738585
IXBX75N170A
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 65A; 1.04kW; PLUS247™
Case: PLUS247™
Mounting: THT
Kind of package: tube
Gate charge: 358nC
Turn-on time: 65ns
Turn-off time: 595ns
Power dissipation: 1.04kW
Collector current: 65A
Pulsed collector current: 300A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Type of transistor: IGBT
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+33.91 EUR
Mindestbestellmenge: 3
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IXFN170N30P pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF9154090911820&compId=IXFN170N30P.pdf?ci_sign=6fff5064feb5b36e4646b3f05f49d502ebb4e4c6
IXFN170N30P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 138A; SOT227B; screw; Idm: 500A
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Pulsed drain current: 500A
Drain current: 138A
Drain-source voltage: 300V
Gate charge: 258nC
Reverse recovery time: 200ns
On-state resistance: 18mΩ
Power dissipation: 890W
Gate-source voltage: ±30V
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
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IXFN170N25X3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF8EB1997F13820&compId=IXFN170N25X3.pdf?ci_sign=5b8a8b6c9997bd914a1a3f0448d61fde4b0f215b
IXFN170N25X3
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 146A; SOT227B; screw; Idm: 400A
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Pulsed drain current: 400A
Drain current: 146A
Drain-source voltage: 250V
Gate charge: 0.19µC
Reverse recovery time: 135ns
On-state resistance: 7.4mΩ
Power dissipation: 390W
Gate-source voltage: ±30V
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
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