Produkte > IXYS > Alle Produkte des Herstellers IXYS (18029) > Seite 54 nach 301

Wählen Sie Seite:   [  << Vorherige Seite ]  1 30 49 50 51 52 53 54 55 56 57 58 59 60 90 120 150 180 210 240 270 300 301  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IXFL55N50 IXFL55N50 IXYS Description: MOSFET N-CH 500V 55A ISOPLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Supplier Device Package: ISOPLUS264™
Part Status: Obsolete
Drain to Source Voltage (Vdss): 500 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN100N10S1 IXFN100N10S1 IXYS Description: MOSFET N-CH 100V 100A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 500mA, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN100N10S2 IXFN100N10S2 IXYS Description: MOSFET N-CH 100V 100A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 500mA, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN100N10S3 IXFN100N10S3 IXYS Description: MOSFET N-CH 100V 100A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 500mA, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN100N20 IXFN100N20 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf____n20_datasheet.pdf.pdf Description: MOSFET N-CH 200V 100A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 500mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN100N25 IXFN100N25 IXYS 98625.pdf Description: MOSFET N-CH 250V 100A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 500mA, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN170N10 IXFN170N10 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_170n10_datasheet.pdf.pdf Description: MOSFET N-CH 100V 170A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 500mA, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 515 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN180N07 IXFN180N07 IXYS IXFN200N06-07%2C%20IXFN180N07.pdf Description: MOSFET N-CH 70V 180A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 500mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 70 V
Gate Charge (Qg) (Max) @ Vgs: 480 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN180N10 IXFN180N10 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn180n10_datasheet.pdf.pdf description Description: MOSFET N-CH 100V 180A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 500mA, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN23N100 IXFN23N100 IXYS IXFN%2824%2C23%29N100.pdf Description: MOSFET N-CH 1000V 23A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN25N90 IXFN25N90 IXYS Description: MOSFET N-CH 900V 25A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 500mA, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN32N60 IXFN32N60 IXYS Description: MOSFET N-CH 600V 32A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 500mA, 10V
Power Dissipation (Max): 520AW (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 325 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN340N06 IXFN340N06 IXYS Description: MOSFET N-CH 60V 340A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 340A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 600 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16800 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN34N100 IXFN34N100 IXYS 98763.pdf Description: MOSFET N-CH 1000V 34A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 500mA, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN44N50Q IXFN44N50Q IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn48n50q_datasheet.pdf.pdf description Description: MOSFET N-CH 500V 44A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 500mA, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN44N50U3 IXFN44N50U3 IXYS Description: MOSFET N-CH 500V 44A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 500mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN48N50U2 IXFN48N50U2 IXYS 96535.pdf Description: MOSFET N-CH 500V 48A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN48N50U3 IXFN48N50U3 IXYS 96535.pdf Description: MOSFET N-CH 500V 48A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN48N55 IXFN48N55 IXYS 98711.pdf Description: MOSFET N-CH 550V 48A SOT-227B
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN50N50 IXFN50N50 IXYS IXF%28N%2CK%2955N50%2C%2050N50.pdf Description: MOSFET N-CH 500V 50A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 500mA, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN80N48 IXFN80N48 IXYS 98724.pdf Description: MOSFET N-CH 480V 80A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 500mA, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 480 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9890 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFP102N15T IXFP102N15T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_102n15t_datasheet.pdf.pdf Description: MOSFET N-CH 150V 102A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 500mA, 10V
Power Dissipation (Max): 455W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5220 pF @ 25 V
auf Bestellung 1200 Stücke:
Lieferzeit 10-14 Tag (e)
50+9.48 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
IXFP4N100Q IXFP4N100Q IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfp4n100q_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
auf Bestellung 319 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.24 EUR
10+7.76 EUR
100+6.28 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXFP5N100P IXFP5N100P IXYS littelfuse-discrete-mosfets-ixf-5n100p-datasheet?assetguid=5a8f0a96-ceb5-415e-bda2-4c69b9726811 Description: MOSFET N-CH 1000V 5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 500mA, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 6V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 33.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.68 EUR
50+5.41 EUR
100+4.79 EUR
500+3.98 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IXFP7N100P IXFP7N100P IXYS littelfuse-discrete-mosfets-ixf-7n100p-datasheet?assetguid=2a6e65f4-034a-4ea8-af00-941e933d8061 Description: MOSFET N-CH 1000V 7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 6V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2590 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFQ26N50 IXFQ26N50 IXYS Description: MOSFET N-CH 500V 26A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Supplier Device Package: TO-3P
Part Status: Active
Drain to Source Voltage (Vdss): 500 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFR100N25 IXFR100N25 IXYS 98840.pdf Description: MOSFET N-CH 250V 87A ISOPLUS247
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFR10N100Q IXFR10N100Q IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr12n100q_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 9A ISOPLUS247
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFR12N100Q IXFR12N100Q IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr12n100q_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 10A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 6A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFR12N120P IXFR12N120P IXYS Description: MOSFET N-CH 1200V ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: ISOPLUS247™
Drain to Source Voltage (Vdss): 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFR13N50 IXFR13N50 IXYS Description: MOSFET N-CH 500V 13A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drain to Source Voltage (Vdss): 500 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFR150N15 IXFR150N15 IXYS Description: MOSFET N-CH 150V 105A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 75A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: ISOPLUS247™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFR15N100P IXFR15N100P IXYS Description: MOSFET N-CH 1000V ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drain to Source Voltage (Vdss): 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFR180N06 IXFR180N06 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr180n06_datasheet.pdf.pdf Description: MOSFET N-CH 60V 180A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 90A, 10V
Power Dissipation (Max): 560W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 420 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFR180N07 IXFR180N07 IXYS Description: MOSFET N-CH 70V 180A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 500mA, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 70 V
Gate Charge (Qg) (Max) @ Vgs: 420 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFR180N085 IXFR180N085 IXYS Description: MOSFET N-CH 85V 180A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 500mA, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: ISOPLUS247™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFR24N50 IXFR24N50 IXYS Description: MOSFET N-CH 500V 24A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 12A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: ISOPLUS247™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFR25N90 IXFR25N90 IXYS Description: MOSFET N-CH 900V 25A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Supplier Device Package: ISOPLUS247™
Part Status: Obsolete
Drain to Source Voltage (Vdss): 900 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFR26N50 IXFR26N50 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr2_n50_datasheet.pdf.pdf Description: MOSFET N-CH 500V 26A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 13A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: ISOPLUS247™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFR30N50Q IXFR30N50Q IXYS IXFR(30,32)N50Q.pdf Description: MOSFET N-CH 500V 30A ISOPLUS247
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFR55N50 IXFR55N50 IXYS Description: MOSFET N-CH 500V 48A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 27.5A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: ISOPLUS247™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFR70N15 IXFR70N15 IXYS Description: MOSFET N-CH 150V 67A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 35A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFR75N10Q IXFR75N10Q IXYS Description: MOSFET N-CH 100V ISOPLUS247
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFR80N10Q IXFR80N10Q IXYS IXFR80N10Q.pdf Description: MOSFET N-CH 100V 76A ISOPLUS247
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFR80N15Q IXFR80N15Q IXYS 98750.pdf Description: MOSFET N-CH 150V 75A ISOPLUS247
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFR80N20Q IXFR80N20Q IXYS 98617.pdf Description: MOSFET N-CH 200V 71A ISOPLUS247
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFR90N20 IXFR90N20 IXYS Description: MOSFET N-CH 200V 90A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drain to Source Voltage (Vdss): 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT10N100 IXFT10N100 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixft12n100_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 10A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT12N100 IXFT12N100 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixft12n100_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 12A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 6A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT14N100 IXFT14N100 IXYS IXFT14N100.pdf Description: MOSFET N-CH 1000V 14A TO268
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT24N50 IXFT24N50 IXYS Description: MOSFET N-CH 500V 24A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 12A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT24N50Q IXFT24N50Q IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_2_n50q_datasheet.pdf.pdf Description: MOSFET N-CH 500V 24A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 12A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT26N50 IXFT26N50 IXYS Description: MOSFET N-CH 500V 26A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 13A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT30N50 IXFT30N50 IXYS Description: MOSFET N-CH 500V 30A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 15A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT30N50Q IXFT30N50Q IXYS IXF(H,T)30N50Q,%2032N50Q.pdf Description: MOSFET N-CH 500V 30A TO-268
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT32N50 IXFT32N50 IXYS Description: MOSFET N-CH 500V 32A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 15A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT4N100Q IXFT4N100Q IXYS 98648.pdf Description: MOSFET N-CH 1000V 4A TO-268
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT50N20 IXFT50N20 IXYS IXF%28H%2CM%2CT%29xxN20.pdf Description: MOSFET N-CH 200V 50A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT58N20 IXFT58N20 IXYS 91522.pdf Description: MOSFET N-CH 200V 58A TO-268
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT6N100Q IXFT6N100Q IXYS Description: MOSFET N-CH 1000V 6A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.5mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFL55N50
IXFL55N50
Hersteller: IXYS
Description: MOSFET N-CH 500V 55A ISOPLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Supplier Device Package: ISOPLUS264™
Part Status: Obsolete
Drain to Source Voltage (Vdss): 500 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN100N10S1
IXFN100N10S1
Hersteller: IXYS
Description: MOSFET N-CH 100V 100A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 500mA, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN100N10S2
IXFN100N10S2
Hersteller: IXYS
Description: MOSFET N-CH 100V 100A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 500mA, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN100N10S3
IXFN100N10S3
Hersteller: IXYS
Description: MOSFET N-CH 100V 100A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 500mA, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN100N20 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf____n20_datasheet.pdf.pdf
IXFN100N20
Hersteller: IXYS
Description: MOSFET N-CH 200V 100A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 500mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN100N25 98625.pdf
IXFN100N25
Hersteller: IXYS
Description: MOSFET N-CH 250V 100A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 500mA, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN170N10 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_170n10_datasheet.pdf.pdf
IXFN170N10
Hersteller: IXYS
Description: MOSFET N-CH 100V 170A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 500mA, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 515 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN180N07 IXFN200N06-07%2C%20IXFN180N07.pdf
IXFN180N07
Hersteller: IXYS
Description: MOSFET N-CH 70V 180A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 500mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 70 V
Gate Charge (Qg) (Max) @ Vgs: 480 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN180N10 description littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn180n10_datasheet.pdf.pdf
IXFN180N10
Hersteller: IXYS
Description: MOSFET N-CH 100V 180A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 500mA, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN23N100 IXFN%2824%2C23%29N100.pdf
IXFN23N100
Hersteller: IXYS
Description: MOSFET N-CH 1000V 23A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN25N90
IXFN25N90
Hersteller: IXYS
Description: MOSFET N-CH 900V 25A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 500mA, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN32N60
IXFN32N60
Hersteller: IXYS
Description: MOSFET N-CH 600V 32A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 500mA, 10V
Power Dissipation (Max): 520AW (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 325 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN340N06
IXFN340N06
Hersteller: IXYS
Description: MOSFET N-CH 60V 340A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 340A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 600 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16800 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN34N100 98763.pdf
IXFN34N100
Hersteller: IXYS
Description: MOSFET N-CH 1000V 34A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 500mA, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN44N50Q description littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn48n50q_datasheet.pdf.pdf
IXFN44N50Q
Hersteller: IXYS
Description: MOSFET N-CH 500V 44A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 500mA, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN44N50U3
IXFN44N50U3
Hersteller: IXYS
Description: MOSFET N-CH 500V 44A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 500mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN48N50U2 96535.pdf
IXFN48N50U2
Hersteller: IXYS
Description: MOSFET N-CH 500V 48A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN48N50U3 96535.pdf
IXFN48N50U3
Hersteller: IXYS
Description: MOSFET N-CH 500V 48A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN48N55 98711.pdf
IXFN48N55
Hersteller: IXYS
Description: MOSFET N-CH 550V 48A SOT-227B
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN50N50 IXF%28N%2CK%2955N50%2C%2050N50.pdf
IXFN50N50
Hersteller: IXYS
Description: MOSFET N-CH 500V 50A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 500mA, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN80N48 98724.pdf
IXFN80N48
Hersteller: IXYS
Description: MOSFET N-CH 480V 80A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 500mA, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 480 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9890 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFP102N15T littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_102n15t_datasheet.pdf.pdf
IXFP102N15T
Hersteller: IXYS
Description: MOSFET N-CH 150V 102A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 500mA, 10V
Power Dissipation (Max): 455W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5220 pF @ 25 V
auf Bestellung 1200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+9.48 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
IXFP4N100Q littelfuse_discrete_mosfets_n-channel_hiperfets_ixfp4n100q_datasheet.pdf.pdf
IXFP4N100Q
Hersteller: IXYS
Description: MOSFET N-CH 1000V 4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
auf Bestellung 319 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.24 EUR
10+7.76 EUR
100+6.28 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXFP5N100P littelfuse-discrete-mosfets-ixf-5n100p-datasheet?assetguid=5a8f0a96-ceb5-415e-bda2-4c69b9726811
IXFP5N100P
Hersteller: IXYS
Description: MOSFET N-CH 1000V 5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 500mA, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 6V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 33.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.68 EUR
50+5.41 EUR
100+4.79 EUR
500+3.98 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IXFP7N100P littelfuse-discrete-mosfets-ixf-7n100p-datasheet?assetguid=2a6e65f4-034a-4ea8-af00-941e933d8061
IXFP7N100P
Hersteller: IXYS
Description: MOSFET N-CH 1000V 7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 6V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2590 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFQ26N50
IXFQ26N50
Hersteller: IXYS
Description: MOSFET N-CH 500V 26A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Supplier Device Package: TO-3P
Part Status: Active
Drain to Source Voltage (Vdss): 500 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFR100N25 98840.pdf
IXFR100N25
Hersteller: IXYS
Description: MOSFET N-CH 250V 87A ISOPLUS247
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFR10N100Q littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr12n100q_datasheet.pdf.pdf
IXFR10N100Q
Hersteller: IXYS
Description: MOSFET N-CH 1000V 9A ISOPLUS247
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFR12N100Q littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr12n100q_datasheet.pdf.pdf
IXFR12N100Q
Hersteller: IXYS
Description: MOSFET N-CH 1000V 10A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 6A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFR12N120P
IXFR12N120P
Hersteller: IXYS
Description: MOSFET N-CH 1200V ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: ISOPLUS247™
Drain to Source Voltage (Vdss): 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFR13N50
IXFR13N50
Hersteller: IXYS
Description: MOSFET N-CH 500V 13A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drain to Source Voltage (Vdss): 500 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFR150N15
IXFR150N15
Hersteller: IXYS
Description: MOSFET N-CH 150V 105A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 75A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: ISOPLUS247™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFR15N100P
IXFR15N100P
Hersteller: IXYS
Description: MOSFET N-CH 1000V ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drain to Source Voltage (Vdss): 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFR180N06 littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr180n06_datasheet.pdf.pdf
IXFR180N06
Hersteller: IXYS
Description: MOSFET N-CH 60V 180A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 90A, 10V
Power Dissipation (Max): 560W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 420 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFR180N07
IXFR180N07
Hersteller: IXYS
Description: MOSFET N-CH 70V 180A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 500mA, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 70 V
Gate Charge (Qg) (Max) @ Vgs: 420 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFR180N085
IXFR180N085
Hersteller: IXYS
Description: MOSFET N-CH 85V 180A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 500mA, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: ISOPLUS247™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFR24N50
IXFR24N50
Hersteller: IXYS
Description: MOSFET N-CH 500V 24A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 12A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: ISOPLUS247™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFR25N90
IXFR25N90
Hersteller: IXYS
Description: MOSFET N-CH 900V 25A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Supplier Device Package: ISOPLUS247™
Part Status: Obsolete
Drain to Source Voltage (Vdss): 900 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFR26N50 littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr2_n50_datasheet.pdf.pdf
IXFR26N50
Hersteller: IXYS
Description: MOSFET N-CH 500V 26A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 13A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: ISOPLUS247™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFR30N50Q IXFR(30,32)N50Q.pdf
IXFR30N50Q
Hersteller: IXYS
Description: MOSFET N-CH 500V 30A ISOPLUS247
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFR55N50
IXFR55N50
Hersteller: IXYS
Description: MOSFET N-CH 500V 48A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 27.5A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: ISOPLUS247™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFR70N15
IXFR70N15
Hersteller: IXYS
Description: MOSFET N-CH 150V 67A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 35A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFR75N10Q
IXFR75N10Q
Hersteller: IXYS
Description: MOSFET N-CH 100V ISOPLUS247
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFR80N10Q IXFR80N10Q.pdf
IXFR80N10Q
Hersteller: IXYS
Description: MOSFET N-CH 100V 76A ISOPLUS247
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFR80N15Q 98750.pdf
IXFR80N15Q
Hersteller: IXYS
Description: MOSFET N-CH 150V 75A ISOPLUS247
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFR80N20Q 98617.pdf
IXFR80N20Q
Hersteller: IXYS
Description: MOSFET N-CH 200V 71A ISOPLUS247
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFR90N20
IXFR90N20
Hersteller: IXYS
Description: MOSFET N-CH 200V 90A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drain to Source Voltage (Vdss): 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT10N100 littelfuse_discrete_mosfets_n-channel_hiperfets_ixft12n100_datasheet.pdf.pdf
IXFT10N100
Hersteller: IXYS
Description: MOSFET N-CH 1000V 10A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT12N100 littelfuse_discrete_mosfets_n-channel_hiperfets_ixft12n100_datasheet.pdf.pdf
IXFT12N100
Hersteller: IXYS
Description: MOSFET N-CH 1000V 12A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 6A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT14N100 IXFT14N100.pdf
IXFT14N100
Hersteller: IXYS
Description: MOSFET N-CH 1000V 14A TO268
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT24N50
IXFT24N50
Hersteller: IXYS
Description: MOSFET N-CH 500V 24A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 12A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT24N50Q littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_2_n50q_datasheet.pdf.pdf
IXFT24N50Q
Hersteller: IXYS
Description: MOSFET N-CH 500V 24A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 12A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT26N50
IXFT26N50
Hersteller: IXYS
Description: MOSFET N-CH 500V 26A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 13A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT30N50
IXFT30N50
Hersteller: IXYS
Description: MOSFET N-CH 500V 30A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 15A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT30N50Q IXF(H,T)30N50Q,%2032N50Q.pdf
IXFT30N50Q
Hersteller: IXYS
Description: MOSFET N-CH 500V 30A TO-268
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT32N50
IXFT32N50
Hersteller: IXYS
Description: MOSFET N-CH 500V 32A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 15A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT4N100Q 98648.pdf
IXFT4N100Q
Hersteller: IXYS
Description: MOSFET N-CH 1000V 4A TO-268
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT50N20 IXF%28H%2CM%2CT%29xxN20.pdf
IXFT50N20
Hersteller: IXYS
Description: MOSFET N-CH 200V 50A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT58N20 91522.pdf
IXFT58N20
Hersteller: IXYS
Description: MOSFET N-CH 200V 58A TO-268
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT6N100Q
IXFT6N100Q
Hersteller: IXYS
Description: MOSFET N-CH 1000V 6A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.5mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 30 49 50 51 52 53 54 55 56 57 58 59 60 90 120 150 180 210 240 270 300 301  [ Nächste Seite >> ]