IXFB210N20P IXYS
Hersteller: IXYS
Description: MOSFET N-CH 200V 210A PLUS264
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PLUS264™
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Power Dissipation (Max): 1500W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 105A, 10V
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
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Technische Details IXFB210N20P IXYS
Description: MOSFET N-CH 200V 210A PLUS264, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PLUS264™, Vgs(th) (Max) @ Id: 4.5V @ 8mA, Power Dissipation (Max): 1500W (Tc), Rds On (Max) @ Id, Vgs: 10.5mOhm @ 105A, 10V, Current - Continuous Drain (Id) @ 25°C: 210A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-264-3, TO-264AA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V.
Weitere Produktangebote IXFB210N20P
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXFB210N20P | Hersteller : IXYS |
MOSFETs 210 Amps 200V 0.0105 Rds |
Produkt ist nicht verfügbar |
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IXFB210N20P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 210A; 1500W; PLUS264™ Case: PLUS264™ Kind of channel: enhancement Technology: HiPerFET™; Polar™ Type of transistor: N-MOSFET Mounting: THT Polarisation: unipolar Gate charge: 255nC On-state resistance: 10.5mΩ Drain current: 210A Power dissipation: 1.5kW Drain-source voltage: 200V Kind of package: tube |
Produkt ist nicht verfügbar |