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IXTA1N100P IXTA1N100P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_1n100p_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 1A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 15Ohm @ 500mA, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 331 pF @ 25 V
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IXTA1R4N120P IXTA1R4N120P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_1r4n120p_datasheet.pdf.pdf Description: MOSFET N-CH 1200V 1.4A TO263
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 13Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
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IXTA2N100P IXTA2N100P IXYS DS99817C(IXTY-TA-TP2N100P).pdf Description: MOSFET N-CH 1000V 2A TO-263
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IXTA2R4N120P IXTA2R4N120P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_2r4n120p_datasheet.pdf.pdf Description: MOSFET N-CH 1200V 2.4A TO263
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IXTA90N15T IXTA90N15T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixtp90n15t_datasheet.pdf.pdf Description: MOSFET N-CH 150V 90A TO263
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Power Dissipation (Max): 455W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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IXTC110N25T IXYS DS99841C(IXTC110N25T).pdf Description: MOSFET N-CH 250V 50A ISOPLUS220
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IXTH102N15T IXTH102N15T IXYS DS99661C(IXTA-TH-TP-TQ102N15T).pdf Description: MOSFET N-CH 150V 102A TO-247
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IXTH102N20T IXTH102N20T IXYS DS99821A(IXTH-TQ102N20T).pdf Description: MOSFET N-CH 200V 102A TO-247
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IXTH2R4N120P IXTH2R4N120P IXYS DS99873B(IXTA-H-P2R4N120P).pdf Description: MOSFET N-CH 1200V 2.4A TO247
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IXTH90N15T IXTH90N15T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixtp90n15t_datasheet.pdf.pdf Description: MOSFET N-CH 150V 90A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 45A, 10V
Power Dissipation (Max): 455W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V
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IXTP08N120P IXTP08N120P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_08n120p_datasheet.pdf.pdf Description: MOSFET N-CH 1200V 800MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 25Ohm @ 500mA, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 333 pF @ 25 V
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IXTP1N100P IXTP1N100P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_1n100p_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 1A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 15Ohm @ 500mA, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 331 pF @ 25 V
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IXTP1R4N100P IXTP1R4N100P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_1r4n100p_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 1.4A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IXTP2R4N120P IXTP2R4N120P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_2r4n120p_datasheet.pdf.pdf Description: MOSFET N-CH 1200V 2.4A TO220AB
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IXTQ102N20T IXTQ102N20T IXYS Description: MOSFET N-CH 200V 102A TO3P
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IXTQ90N15T IXTQ90N15T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixtp90n15t_datasheet.pdf.pdf Description: MOSFET N-CH 150V 90A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 45A, 10V
Power Dissipation (Max): 455W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V
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IXTV102N20T IXYS IXT(H,Q,V)102N20T.pdf Description: MOSFET N-CH 200V 102A PLUS220
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IXTV110N25TS IXTV110N25TS IXYS IXT%28H%2CV%29110N25T%28S%29.pdf Description: MOSFET N-CH 250V 110A PLUS220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 55A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: PLUS-220SMD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
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IXTX17N120L IXTX17N120L IXYS DS99615B(IXTK-TX17N120L).pdf Description: MOSFET N-CH 1200V 17A PLUS247
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IXTY1N100P IXTY1N100P IXYS DS99234G(IXTA-TP-TY1N100P).pdf Description: MOSFET N-CH 1000V 1A TO-252
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IXTY1R4N100P IXTY1R4N100P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_1r4n100p_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 1.4A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
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IXUC160N075 IXUC160N075 IXYS 98830.pdf Description: MOSFET N-CH 75V 160A ISOPLUS220
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: ISOPLUS220™
Vgs(th) (Max) @ Id: 4V @ 2mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOPLUS220™
Packaging: Tube
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LKK47-06C5 IXYS littelfuse_discrete_mosfets_n-channel_super_junction_lkk47-06c5_datasheet.pdf.pdf Description: MOSFET 2N-CH 600V 47A ISOPLUS264
Part Status: Active
Supplier Device Package: ISOPLUS264™
Vgs(th) (Max) @ Id: 3.9V @ 3mA
FET Feature: Super Junction
Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
Current - Continuous Drain (Id) @ 25°C: 47A
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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MCD220-18io1 IXYS L083.pdf Description: SCR MOD 1800V Y2-DCB
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MCO75-12io1 IXYS MCO75-12IO1.pdf Description: MOD THYRISTOR SGL 1200V SOT-227B
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MCO75-16io1 MCO75-16io1 IXYS Littelfuse-Power-Semiconductors-MCO75-16io1-Datasheet?assetguid=EABC24CA-DDA6-4AF6-899F-0C7794D1B645 Description: SCR MODULE 1.6KV 121A SOT-227-4
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1070A, 1150A
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 77 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 121 A
Voltage - Off State: 1.6 kV
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MDD200-22N1 IXYS MDD200-22N1.pdf Description: DIODE MODULE GP 2200V 224A Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 224A
Supplier Device Package: Y4-M6
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 20 mA @ 2200 V
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MIAA10WB600TMH IXYS MIAA10WB600TMH.pdf Description: MODULE IGBT CBI
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MIAA10WD600TMH IXYS MIAA10WD600TMH.pdf Description: IGBT MOD 600V 18A 70W MINIPACK2
Packaging: Box
Package / Case: MiniPack2
Mounting Type: Chassis Mount
Input: Single Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 10A
NTC Thermistor: Yes
Supplier Device Package: MiniPack2
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 70 W
Current - Collector Cutoff (Max): 600 µA
Input Capacitance (Cies) @ Vce: 450 pF @ 25 V
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MIAA10WE600TMH IXYS MIAA10WE600TMH.pdf Description: MODULE IGBT CBI
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MIAA10WF600TMH IXYS MIAA10WF600TMH.pdf Description: MODULE IGBT CBI
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MIAA15WB600TMH IXYS Description: IGBT MOD 600V 23A 80W MINIPACK2
Packaging: Box
Package / Case: MiniPack2
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: MiniPack2
IGBT Type: NPT
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 80 W
Current - Collector Cutoff (Max): 600 µA
Input Capacitance (Cies) @ Vce: 700 pF @ 25 V
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MIAA15WD600TMH IXYS MIAA15WD600TMH.pdf Description: IGBT MOD 600V 23A 80W MINIPACK2
Packaging: Box
Package / Case: MiniPack2
Mounting Type: Chassis Mount
Input: Single Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: MiniPack2
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 80 W
Current - Collector Cutoff (Max): 600 µA
Input Capacitance (Cies) @ Vce: 700 pF @ 25 V
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MIAA15WE600TMH IXYS MIAA15WE600TMH.pdf Description: MODULE IGBT CBI
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MIAA20WB600TMH IXYS Description: IGBT MOD 600V 29A 100W MINIPACK2
Packaging: Box
Package / Case: MiniPack2
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: MiniPack2
IGBT Type: NPT
Current - Collector (Ic) (Max): 29 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 100 W
Current - Collector Cutoff (Max): 1.1 mA
Input Capacitance (Cies) @ Vce: 900 pF @ 25 V
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MIAA20WD600TMH IXYS MIAA20WD600TMH.pdf Description: IGBT MOD 600V 29A 100W MINIPACK2
Packaging: Box
Package / Case: MiniPack2
Mounting Type: Chassis Mount
Input: Single Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: MiniPack2
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 29 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 100 W
Current - Collector Cutoff (Max): 1.1 mA
Input Capacitance (Cies) @ Vce: 900 pF @ 25 V
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MIAA20WE600TMH IXYS MIAA20WE600TMH.pdf Description: MODULE IGBT CBI
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MII300-12E4 IXYS MII300-12E4.pdf Description: IGBT MOD 1200V 280A 1100W Y3LI
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Y3-Li
Packaging: Box
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
Current - Collector Cutoff (Max): 3.3 mA
Power - Max: 1100 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 280 A
IGBT Type: NPT
Supplier Device Package: Y3-Li
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 200A
Operating Temperature: -40°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
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MITA10WB1200TMH IXYS MITA10WB1200TMH.pdf Description: MODULE IGBT CBI
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MITA15WB1200TMH IXYS MITA15WB1200TMH.pdf Description: MODULE IGBT CBI
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MITB10WB1200TMH IXYS MITB10WB1200TMH.pdf Description: MODULE IGBT CBI
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MITB15WB1200TMH IXYS MITB15WB1200TMH.pdf Description: MODULE IGBT CBI
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MKI100-12F8 IXYS Description: IGBT MODULE 1200V 125A 640W E3
Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
Current - Collector Cutoff (Max): 1.3 mA
Power - Max: 640 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 125 A
Part Status: Active
IGBT Type: NPT
Supplier Device Package: E3
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 100A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Full Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: E3
Packaging: Box
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MKI50-12F7 IXYS Description: IGBT MODULE 1200V 65A 350W E2
Configuration: Full Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: E2
Packaging: Box
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
Current - Collector Cutoff (Max): 700 µA
Power - Max: 350 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 65 A
Part Status: Active
IGBT Type: NPT
Supplier Device Package: E2
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 50A
Operating Temperature: -40°C ~ 125°C (TJ)
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MKI80-06T6K IXYS MKI80-06T6K.pdf Description: IGBT MODULE 600V 89A 210W E1
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
Current - Collector Cutoff (Max): 500 µA
Power - Max: 210 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 89 A
IGBT Type: Trench
Supplier Device Package: E1
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Full Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: E1
Packaging: Box
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MUBW15-12T7 IXYS MUBW15-12T7.pdf Description: IGBT MODULE 1200V 30A 140W E2
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MUBW25-12T7 IXYS MUBW25-12T7.pdf Description: IGBT MODULE 1200V 45A 170W E2
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MUBW40-12T7 IXYS MUBW40-12T7.pdf Description: IGBT MODULE 1200V 62A 220W E2
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
Current - Collector Cutoff (Max): 1.75 mA
Power - Max: 220 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 62 A
IGBT Type: Trench
Supplier Device Package: E2
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter with Brake
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: E2
Packaging: Box
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MUBW45-12T6K IXYS MUBW45-12T6K.pdf Description: IGBT MODULE 1200V 43A 160W E1
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MUBW50-12T8 IXYS MUBW50-12T8.pdf Description: IGBT MODULE 1200V 80A 270W E3
Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V
Current - Collector Cutoff (Max): 2.7 mA
Power - Max: 270 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 80 A
IGBT Type: Trench
Supplier Device Package: E3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Three Phase Inverter with Brake
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: E3
Packaging: Box
Produkt ist nicht verfügbar
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MUBW50-17T8 IXYS Description: IGBT MODULE 1700V 74A 290W E3
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
Current - Collector Cutoff (Max): 400 µA
Power - Max: 290 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 74 A
IGBT Type: Trench
Supplier Device Package: E3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Three Phase Inverter with Brake
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: E3
Packaging: Box
Produkt ist nicht verfügbar
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MUBW75-12T8 IXYS MUBW75-12T8.pdf Description: IGBT MODULE 1200V 110A 355W E3
Input Capacitance (Cies) @ Vce: 5.35 nF @ 25 V
Current - Collector Cutoff (Max): 4 mA
Power - Max: 355 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 110 A
Part Status: Active
IGBT Type: Trench
Supplier Device Package: E3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Three Phase Inverter with Brake
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: E3
Packaging: Box
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MUBW75-17T8 IXYS MUBW75-17T8.pdf Description: IGBT MODULE 1700V 113A 450W E3
Input Capacitance (Cies) @ Vce: 6.6 nF @ 25 V
Current - Collector Cutoff (Max): 800 µA
Power - Max: 450 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 113 A
Part Status: Active
IGBT Type: Trench
Supplier Device Package: E3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 75A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Three Phase Inverter with Brake
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: E3
Packaging: Box
Produkt ist nicht verfügbar
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MWI100-12T8T IXYS MWI100-12T8T.pdf Description: MOD IGBT TRENCH SIXPACK E3
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MWI150-12T8T IXYS MWI150-12T8T.pdf Description: MOD IGBT TRENCH SIXPACK E3
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MWI15-12A6K IXYS MWI15-12A6K.pdf Description: MOD IGBT RBSOA SIXPACK E1
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MWI225-12E9 IXYS MWI225-12E9.pdf Description: MOD IGBT SIXPACK E+
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MWI225-17E9 IXYS MWI225-17E9.pdf Description: IGBT MODULE 1700V 335A 1400W E+
Input Capacitance (Cies) @ Vce: 22 nF @ 25 V
Current - Collector Cutoff (Max): 600 µA
Power - Max: 1400 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 335 A
Part Status: Active
IGBT Type: NPT
Supplier Device Package: E+
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 225A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Three Phase
Input: Standard
Mounting Type: Chassis Mount
Package / Case: E+
Packaging: Box
Produkt ist nicht verfügbar
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MWI300-12E9 IXYS MWI300-12E9.pdf Description: IGBT MODULE 1200V 530A 2100W E+
Mounting Type: Chassis Mount
Package / Case: E+
Packaging: Box
Input Capacitance (Cies) @ Vce: 22 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 2100 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 530 A
Part Status: Obsolete
IGBT Type: NPT
Supplier Device Package: E+
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 300A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Three Phase
Input: Standard
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MWI300-17E9 IXYS MWI300-17E9.pdf Description: IGBT MODULE 1700V 500A 2200W E+
Packaging: Box
Package / Case: E+
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: E+
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2200 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 33 nF @ 25 V
Produkt ist nicht verfügbar
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IXTA1N100P littelfuse_discrete_mosfets_n-channel_standard_ixt_1n100p_datasheet.pdf.pdf
IXTA1N100P
Hersteller: IXYS
Description: MOSFET N-CH 1000V 1A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 15Ohm @ 500mA, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 331 pF @ 25 V
Produkt ist nicht verfügbar
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IXTA1R4N120P littelfuse_discrete_mosfets_n-channel_standard_ixt_1r4n120p_datasheet.pdf.pdf
IXTA1R4N120P
Hersteller: IXYS
Description: MOSFET N-CH 1200V 1.4A TO263
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 13Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
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2+11.25 EUR
50+8.91 EUR
100+7.64 EUR
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IXTA2N100P DS99817C(IXTY-TA-TP2N100P).pdf
IXTA2N100P
Hersteller: IXYS
Description: MOSFET N-CH 1000V 2A TO-263
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IXTA2R4N120P littelfuse_discrete_mosfets_n-channel_standard_ixt_2r4n120p_datasheet.pdf.pdf
IXTA2R4N120P
Hersteller: IXYS
Description: MOSFET N-CH 1200V 2.4A TO263
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2+13.39 EUR
10+12.09 EUR
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IXTA90N15T littelfuse_discrete_mosfets_n-channel_trench_gate_ixtp90n15t_datasheet.pdf.pdf
IXTA90N15T
Hersteller: IXYS
Description: MOSFET N-CH 150V 90A TO263
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Power Dissipation (Max): 455W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar
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IXTC110N25T DS99841C(IXTC110N25T).pdf
Hersteller: IXYS
Description: MOSFET N-CH 250V 50A ISOPLUS220
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IXTH102N15T DS99661C(IXTA-TH-TP-TQ102N15T).pdf
IXTH102N15T
Hersteller: IXYS
Description: MOSFET N-CH 150V 102A TO-247
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IXTH102N20T DS99821A(IXTH-TQ102N20T).pdf
IXTH102N20T
Hersteller: IXYS
Description: MOSFET N-CH 200V 102A TO-247
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IXTH2R4N120P DS99873B(IXTA-H-P2R4N120P).pdf
IXTH2R4N120P
Hersteller: IXYS
Description: MOSFET N-CH 1200V 2.4A TO247
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IXTH90N15T littelfuse_discrete_mosfets_n-channel_trench_gate_ixtp90n15t_datasheet.pdf.pdf
IXTH90N15T
Hersteller: IXYS
Description: MOSFET N-CH 150V 90A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 45A, 10V
Power Dissipation (Max): 455W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V
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IXTP08N120P littelfuse_discrete_mosfets_n-channel_standard_ixt_08n120p_datasheet.pdf.pdf
IXTP08N120P
Hersteller: IXYS
Description: MOSFET N-CH 1200V 800MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 25Ohm @ 500mA, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 333 pF @ 25 V
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IXTP1N100P littelfuse_discrete_mosfets_n-channel_standard_ixt_1n100p_datasheet.pdf.pdf
IXTP1N100P
Hersteller: IXYS
Description: MOSFET N-CH 1000V 1A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 15Ohm @ 500mA, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 331 pF @ 25 V
auf Bestellung 142 Stücke:
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4+5.43 EUR
50+4.34 EUR
100+3.57 EUR
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IXTP1R4N100P littelfuse_discrete_mosfets_n-channel_standard_ixt_1r4n100p_datasheet.pdf.pdf
IXTP1R4N100P
Hersteller: IXYS
Description: MOSFET N-CH 1000V 1.4A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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50+4.57 EUR
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IXTP2R4N120P littelfuse_discrete_mosfets_n-channel_standard_ixt_2r4n120p_datasheet.pdf.pdf
IXTP2R4N120P
Hersteller: IXYS
Description: MOSFET N-CH 1200V 2.4A TO220AB
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IXTQ102N20T
IXTQ102N20T
Hersteller: IXYS
Description: MOSFET N-CH 200V 102A TO3P
Produkt ist nicht verfügbar
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IXTQ90N15T littelfuse_discrete_mosfets_n-channel_trench_gate_ixtp90n15t_datasheet.pdf.pdf
IXTQ90N15T
Hersteller: IXYS
Description: MOSFET N-CH 150V 90A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 45A, 10V
Power Dissipation (Max): 455W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V
Produkt ist nicht verfügbar
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IXTV102N20T IXT(H,Q,V)102N20T.pdf
Hersteller: IXYS
Description: MOSFET N-CH 200V 102A PLUS220
Produkt ist nicht verfügbar
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IXTV110N25TS IXT%28H%2CV%29110N25T%28S%29.pdf
IXTV110N25TS
Hersteller: IXYS
Description: MOSFET N-CH 250V 110A PLUS220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 55A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: PLUS-220SMD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
Produkt ist nicht verfügbar
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IXTX17N120L DS99615B(IXTK-TX17N120L).pdf
IXTX17N120L
Hersteller: IXYS
Description: MOSFET N-CH 1200V 17A PLUS247
Produkt ist nicht verfügbar
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IXTY1N100P DS99234G(IXTA-TP-TY1N100P).pdf
IXTY1N100P
Hersteller: IXYS
Description: MOSFET N-CH 1000V 1A TO-252
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IXTY1R4N100P littelfuse_discrete_mosfets_n-channel_standard_ixt_1r4n100p_datasheet.pdf.pdf
IXTY1R4N100P
Hersteller: IXYS
Description: MOSFET N-CH 1000V 1.4A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Produkt ist nicht verfügbar
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IXUC160N075 98830.pdf
IXUC160N075
Hersteller: IXYS
Description: MOSFET N-CH 75V 160A ISOPLUS220
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: ISOPLUS220™
Vgs(th) (Max) @ Id: 4V @ 2mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOPLUS220™
Packaging: Tube
Produkt ist nicht verfügbar
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LKK47-06C5 littelfuse_discrete_mosfets_n-channel_super_junction_lkk47-06c5_datasheet.pdf.pdf
Hersteller: IXYS
Description: MOSFET 2N-CH 600V 47A ISOPLUS264
Part Status: Active
Supplier Device Package: ISOPLUS264™
Vgs(th) (Max) @ Id: 3.9V @ 3mA
FET Feature: Super Junction
Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
Current - Continuous Drain (Id) @ 25°C: 47A
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Produkt ist nicht verfügbar
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MCD220-18io1 L083.pdf
Hersteller: IXYS
Description: SCR MOD 1800V Y2-DCB
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MCO75-12io1 MCO75-12IO1.pdf
Hersteller: IXYS
Description: MOD THYRISTOR SGL 1200V SOT-227B
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MCO75-16io1 Littelfuse-Power-Semiconductors-MCO75-16io1-Datasheet?assetguid=EABC24CA-DDA6-4AF6-899F-0C7794D1B645
MCO75-16io1
Hersteller: IXYS
Description: SCR MODULE 1.6KV 121A SOT-227-4
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1070A, 1150A
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 77 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 121 A
Voltage - Off State: 1.6 kV
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AnzahlPrivatkunde
1+53.49 EUR
10+39.26 EUR
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MDD200-22N1 MDD200-22N1.pdf
Hersteller: IXYS
Description: DIODE MODULE GP 2200V 224A Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 224A
Supplier Device Package: Y4-M6
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 20 mA @ 2200 V
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AnzahlPrivatkunde
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MIAA10WB600TMH MIAA10WB600TMH.pdf
Hersteller: IXYS
Description: MODULE IGBT CBI
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MIAA10WD600TMH MIAA10WD600TMH.pdf
Hersteller: IXYS
Description: IGBT MOD 600V 18A 70W MINIPACK2
Packaging: Box
Package / Case: MiniPack2
Mounting Type: Chassis Mount
Input: Single Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 10A
NTC Thermistor: Yes
Supplier Device Package: MiniPack2
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 70 W
Current - Collector Cutoff (Max): 600 µA
Input Capacitance (Cies) @ Vce: 450 pF @ 25 V
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MIAA10WE600TMH MIAA10WE600TMH.pdf
Hersteller: IXYS
Description: MODULE IGBT CBI
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MIAA10WF600TMH MIAA10WF600TMH.pdf
Hersteller: IXYS
Description: MODULE IGBT CBI
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MIAA15WB600TMH
Hersteller: IXYS
Description: IGBT MOD 600V 23A 80W MINIPACK2
Packaging: Box
Package / Case: MiniPack2
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: MiniPack2
IGBT Type: NPT
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 80 W
Current - Collector Cutoff (Max): 600 µA
Input Capacitance (Cies) @ Vce: 700 pF @ 25 V
Produkt ist nicht verfügbar
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MIAA15WD600TMH MIAA15WD600TMH.pdf
Hersteller: IXYS
Description: IGBT MOD 600V 23A 80W MINIPACK2
Packaging: Box
Package / Case: MiniPack2
Mounting Type: Chassis Mount
Input: Single Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: MiniPack2
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 80 W
Current - Collector Cutoff (Max): 600 µA
Input Capacitance (Cies) @ Vce: 700 pF @ 25 V
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MIAA15WE600TMH MIAA15WE600TMH.pdf
Hersteller: IXYS
Description: MODULE IGBT CBI
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MIAA20WB600TMH
Hersteller: IXYS
Description: IGBT MOD 600V 29A 100W MINIPACK2
Packaging: Box
Package / Case: MiniPack2
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: MiniPack2
IGBT Type: NPT
Current - Collector (Ic) (Max): 29 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 100 W
Current - Collector Cutoff (Max): 1.1 mA
Input Capacitance (Cies) @ Vce: 900 pF @ 25 V
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MIAA20WD600TMH MIAA20WD600TMH.pdf
Hersteller: IXYS
Description: IGBT MOD 600V 29A 100W MINIPACK2
Packaging: Box
Package / Case: MiniPack2
Mounting Type: Chassis Mount
Input: Single Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: MiniPack2
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 29 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 100 W
Current - Collector Cutoff (Max): 1.1 mA
Input Capacitance (Cies) @ Vce: 900 pF @ 25 V
Produkt ist nicht verfügbar
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MIAA20WE600TMH MIAA20WE600TMH.pdf
Hersteller: IXYS
Description: MODULE IGBT CBI
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MII300-12E4 MII300-12E4.pdf
Hersteller: IXYS
Description: IGBT MOD 1200V 280A 1100W Y3LI
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Y3-Li
Packaging: Box
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
Current - Collector Cutoff (Max): 3.3 mA
Power - Max: 1100 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 280 A
IGBT Type: NPT
Supplier Device Package: Y3-Li
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 200A
Operating Temperature: -40°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
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MITA10WB1200TMH MITA10WB1200TMH.pdf
Hersteller: IXYS
Description: MODULE IGBT CBI
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MITA15WB1200TMH MITA15WB1200TMH.pdf
Hersteller: IXYS
Description: MODULE IGBT CBI
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MITB10WB1200TMH MITB10WB1200TMH.pdf
Hersteller: IXYS
Description: MODULE IGBT CBI
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MITB15WB1200TMH MITB15WB1200TMH.pdf
Hersteller: IXYS
Description: MODULE IGBT CBI
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MKI100-12F8
Hersteller: IXYS
Description: IGBT MODULE 1200V 125A 640W E3
Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
Current - Collector Cutoff (Max): 1.3 mA
Power - Max: 640 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 125 A
Part Status: Active
IGBT Type: NPT
Supplier Device Package: E3
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 100A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Full Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: E3
Packaging: Box
Produkt ist nicht verfügbar
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MKI50-12F7
Hersteller: IXYS
Description: IGBT MODULE 1200V 65A 350W E2
Configuration: Full Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: E2
Packaging: Box
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
Current - Collector Cutoff (Max): 700 µA
Power - Max: 350 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 65 A
Part Status: Active
IGBT Type: NPT
Supplier Device Package: E2
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 50A
Operating Temperature: -40°C ~ 125°C (TJ)
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MKI80-06T6K MKI80-06T6K.pdf
Hersteller: IXYS
Description: IGBT MODULE 600V 89A 210W E1
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
Current - Collector Cutoff (Max): 500 µA
Power - Max: 210 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 89 A
IGBT Type: Trench
Supplier Device Package: E1
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Full Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: E1
Packaging: Box
Produkt ist nicht verfügbar
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MUBW15-12T7 MUBW15-12T7.pdf
Hersteller: IXYS
Description: IGBT MODULE 1200V 30A 140W E2
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MUBW25-12T7 MUBW25-12T7.pdf
Hersteller: IXYS
Description: IGBT MODULE 1200V 45A 170W E2
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MUBW40-12T7 MUBW40-12T7.pdf
Hersteller: IXYS
Description: IGBT MODULE 1200V 62A 220W E2
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
Current - Collector Cutoff (Max): 1.75 mA
Power - Max: 220 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 62 A
IGBT Type: Trench
Supplier Device Package: E2
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter with Brake
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: E2
Packaging: Box
Produkt ist nicht verfügbar
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MUBW45-12T6K MUBW45-12T6K.pdf
Hersteller: IXYS
Description: IGBT MODULE 1200V 43A 160W E1
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MUBW50-12T8 MUBW50-12T8.pdf
Hersteller: IXYS
Description: IGBT MODULE 1200V 80A 270W E3
Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V
Current - Collector Cutoff (Max): 2.7 mA
Power - Max: 270 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 80 A
IGBT Type: Trench
Supplier Device Package: E3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Three Phase Inverter with Brake
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: E3
Packaging: Box
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MUBW50-17T8
Hersteller: IXYS
Description: IGBT MODULE 1700V 74A 290W E3
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
Current - Collector Cutoff (Max): 400 µA
Power - Max: 290 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 74 A
IGBT Type: Trench
Supplier Device Package: E3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Three Phase Inverter with Brake
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: E3
Packaging: Box
Produkt ist nicht verfügbar
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MUBW75-12T8 MUBW75-12T8.pdf
Hersteller: IXYS
Description: IGBT MODULE 1200V 110A 355W E3
Input Capacitance (Cies) @ Vce: 5.35 nF @ 25 V
Current - Collector Cutoff (Max): 4 mA
Power - Max: 355 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 110 A
Part Status: Active
IGBT Type: Trench
Supplier Device Package: E3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Three Phase Inverter with Brake
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: E3
Packaging: Box
Produkt ist nicht verfügbar
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MUBW75-17T8 MUBW75-17T8.pdf
Hersteller: IXYS
Description: IGBT MODULE 1700V 113A 450W E3
Input Capacitance (Cies) @ Vce: 6.6 nF @ 25 V
Current - Collector Cutoff (Max): 800 µA
Power - Max: 450 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 113 A
Part Status: Active
IGBT Type: Trench
Supplier Device Package: E3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 75A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Three Phase Inverter with Brake
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: E3
Packaging: Box
Produkt ist nicht verfügbar
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MWI100-12T8T MWI100-12T8T.pdf
Hersteller: IXYS
Description: MOD IGBT TRENCH SIXPACK E3
Produkt ist nicht verfügbar
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MWI150-12T8T MWI150-12T8T.pdf
Hersteller: IXYS
Description: MOD IGBT TRENCH SIXPACK E3
Produkt ist nicht verfügbar
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MWI15-12A6K MWI15-12A6K.pdf
Hersteller: IXYS
Description: MOD IGBT RBSOA SIXPACK E1
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MWI225-12E9 MWI225-12E9.pdf
Hersteller: IXYS
Description: MOD IGBT SIXPACK E+
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MWI225-17E9 MWI225-17E9.pdf
Hersteller: IXYS
Description: IGBT MODULE 1700V 335A 1400W E+
Input Capacitance (Cies) @ Vce: 22 nF @ 25 V
Current - Collector Cutoff (Max): 600 µA
Power - Max: 1400 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 335 A
Part Status: Active
IGBT Type: NPT
Supplier Device Package: E+
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 225A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Three Phase
Input: Standard
Mounting Type: Chassis Mount
Package / Case: E+
Packaging: Box
Produkt ist nicht verfügbar
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MWI300-12E9 MWI300-12E9.pdf
Hersteller: IXYS
Description: IGBT MODULE 1200V 530A 2100W E+
Mounting Type: Chassis Mount
Package / Case: E+
Packaging: Box
Input Capacitance (Cies) @ Vce: 22 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 2100 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 530 A
Part Status: Obsolete
IGBT Type: NPT
Supplier Device Package: E+
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 300A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Three Phase
Input: Standard
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MWI300-17E9 MWI300-17E9.pdf
Hersteller: IXYS
Description: IGBT MODULE 1700V 500A 2200W E+
Packaging: Box
Package / Case: E+
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: E+
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2200 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 33 nF @ 25 V
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