MWI75-12T8T IXYS
Hersteller: IXYS
Description: IGBT MODULE 1200V 110A 360W E3
Input Capacitance (Cies) @ Vce: 5.35 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Power - Max: 360 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 110 A
IGBT Type: Trench
Supplier Device Package: E3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: E3
Packaging: Box
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Technische Details MWI75-12T8T IXYS
Description: IGBT MODULE 1200V 110A 360W E3, Input Capacitance (Cies) @ Vce: 5.35 nF @ 25 V, Current - Collector Cutoff (Max): 3 mA, Power - Max: 360 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 110 A, IGBT Type: Trench, Supplier Device Package: E3, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A, Operating Temperature: -40°C ~ 125°C (TJ), Configuration: Three Phase Inverter, Input: Standard, Mounting Type: Chassis Mount, Package / Case: E3, Packaging: Box.
Weitere Produktangebote MWI75-12T8T
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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MWI75-12T8T | Hersteller : IXYS |
Discrete Semiconductor Modules 75 Amps 1200V |
Produkt ist nicht verfügbar |


