Produkte > IXYS > MWI50-12T7T

MWI50-12T7T IXYS


MWI50-12T7T.pdf Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: E2-Pack
Application: motors; photovoltaics
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 270W
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details MWI50-12T7T IXYS

Description: IGBT MODULE 1200V 80A 270W E2, Packaging: Box, Package / Case: E2, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 125°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A, NTC Thermistor: Yes, Supplier Device Package: E2, IGBT Type: Trench, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 270 W, Current - Collector Cutoff (Max): 4 mA, Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V.

Weitere Produktangebote MWI50-12T7T

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
MWI50-12T7T Hersteller : IXYS MWI50-12T7T.pdf Description: IGBT MODULE 1200V 80A 270W E2
Packaging: Box
Package / Case: E2
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: E2
IGBT Type: Trench
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 270 W
Current - Collector Cutoff (Max): 4 mA
Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V
Produkt ist nicht verfügbar
MWI50-12T7T MWI50-12T7T Hersteller : IXYS MWI50_12T7T-3312267.pdf IGBT Modules 50 Amps 1200V
Produkt ist nicht verfügbar
MWI50-12T7T Hersteller : IXYS MWI50-12T7T.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: E2-Pack
Application: motors; photovoltaics
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 270W
Mechanical mounting: screw
Produkt ist nicht verfügbar