Technische Details MUBW50-12T8 IXYS
Description: IGBT MODULE 1200V 80A 270W E3, Packaging: Box, Package / Case: E3, Mounting Type: Chassis Mount, Input: Three Phase Bridge Rectifier, Configuration: Three Phase Inverter with Brake, Operating Temperature: -40°C ~ 125°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A, NTC Thermistor: Yes, Supplier Device Package: E3, IGBT Type: Trench, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 270 W, Current - Collector Cutoff (Max): 2.7 mA, Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V.
Weitere Produktangebote MUBW50-12T8
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| MUBW50-12T8 | Hersteller : IXYS |
 Description: IGBT MODULE 1200V 80A 270W E3Packaging: Box Package / Case: E3 Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: E3 IGBT Type: Trench Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 270 W Current - Collector Cutoff (Max): 2.7 mA Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V |
Produkt ist nicht verfügbar |
||
 |
MUBW50-12T8 | Hersteller : IXYS |
Discrete Semiconductor Modules 50 Amps 1200V |
Produkt ist nicht verfügbar |