MUBW50-12T8
Hersteller:
CBI = Converter Brake Inverter 1200V 85A Vce=1.7V Силові IGBT-модулі
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Technische Details MUBW50-12T8
Description: IGBT MODULE 1200V 80A 270W E3, Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V, Current - Collector Cutoff (Max): 2.7 mA, Power - Max: 270 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 80 A, IGBT Type: Trench, Supplier Device Package: E3, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A, Operating Temperature: -40°C ~ 125°C (TJ), Configuration: Three Phase Inverter with Brake, Input: Three Phase Bridge Rectifier, Mounting Type: Chassis Mount, Package / Case: E3, Packaging: Box.
Weitere Produktangebote MUBW50-12T8
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| MUBW50-12T8 | IXYS |
Description: IGBT MODULE 1200V 80A 270W E3 Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V Current - Collector Cutoff (Max): 2.7 mA Power - Max: 270 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 80 A IGBT Type: Trench Supplier Device Package: E3 NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A Operating Temperature: -40°C ~ 125°C (TJ) Configuration: Three Phase Inverter with Brake Input: Three Phase Bridge Rectifier Mounting Type: Chassis Mount Package / Case: E3 Packaging: Box |
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Im Einkaufswagen Stück im Wert von UAH | |
 |
MUBW50-12T8 | IXYS |
IGBT Modules 50 Amps 1200V |
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Im Einkaufswagen Stück im Wert von UAH |
| MUBW50-12T8 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 50A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 50A Case: E3-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 200A Power dissipation: 270W Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MUBW50-12T8 |
|
Hersteller: IXYS
Description: IGBT MODULE 1200V 80A 270W E3
Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V
Current - Collector Cutoff (Max): 2.7 mA
Power - Max: 270 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 80 A
IGBT Type: Trench
Supplier Device Package: E3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Three Phase Inverter with Brake
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: E3
Packaging: Box
Description: IGBT MODULE 1200V 80A 270W E3
Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V
Current - Collector Cutoff (Max): 2.7 mA
Power - Max: 270 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 80 A
IGBT Type: Trench
Supplier Device Package: E3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Three Phase Inverter with Brake
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: E3
Packaging: Box
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MUBW50-12T8 |
|
Hersteller: IXYS
IGBT Modules 50 Amps 1200V
IGBT Modules 50 Amps 1200V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MUBW50-12T8 |
|
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 50A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Power dissipation: 270W
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 50A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Power dissipation: 270W
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH