Technische Details MUBW50-12T8
Description: IGBT MODULE 1200V 80A 270W E3, Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V, Current - Collector Cutoff (Max): 2.7 mA, Power - Max: 270 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 80 A, IGBT Type: Trench, Supplier Device Package: E3, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A, Operating Temperature: -40°C ~ 125°C (TJ), Configuration: Three Phase Inverter with Brake, Input: Three Phase Bridge Rectifier, Mounting Type: Chassis Mount, Package / Case: E3, Packaging: Box.
Weitere Produktangebote MUBW50-12T8
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| MUBW50-12T8 | Hersteller : IXYS |
Description: IGBT MODULE 1200V 80A 270W E3Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V Current - Collector Cutoff (Max): 2.7 mA Power - Max: 270 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 80 A IGBT Type: Trench Supplier Device Package: E3 NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A Operating Temperature: -40°C ~ 125°C (TJ) Configuration: Three Phase Inverter with Brake Input: Three Phase Bridge Rectifier Mounting Type: Chassis Mount Package / Case: E3 Packaging: Box |
Produkt ist nicht verfügbar |
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MUBW50-12T8 | Hersteller : IXYS |
Discrete Semiconductor Modules 50 Amps 1200V |
Produkt ist nicht verfügbar |


