Technische Details MUBW50-12T8
Description: IGBT MODULE 1200V 80A 270W E3, Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V, Current - Collector Cutoff (Max): 2.7 mA, Power - Max: 270 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 80 A, IGBT Type: Trench, Supplier Device Package: E3, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A, Operating Temperature: -40°C ~ 125°C (TJ), Configuration: Three Phase Inverter with Brake, Input: Three Phase Bridge Rectifier, Mounting Type: Chassis Mount, Package / Case: E3, Packaging: Box.
Weitere Produktangebote MUBW50-12T8
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| MUBW50-12T8 | IXYS |
Description: IGBT MODULE 1200V 80A 270W E3Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V Current - Collector Cutoff (Max): 2.7 mA Power - Max: 270 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 80 A IGBT Type: Trench Supplier Device Package: E3 NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A Operating Temperature: -40°C ~ 125°C (TJ) Configuration: Three Phase Inverter with Brake Input: Three Phase Bridge Rectifier Mounting Type: Chassis Mount Package / Case: E3 Packaging: Box |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
|
MUBW50-12T8 | IXYS |
Discrete Semiconductor Modules 50 Amps 1200V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MUBW50-12T8 |
![]() |
Hersteller: IXYS
Description: IGBT MODULE 1200V 80A 270W E3
Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V
Current - Collector Cutoff (Max): 2.7 mA
Power - Max: 270 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 80 A
IGBT Type: Trench
Supplier Device Package: E3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Three Phase Inverter with Brake
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: E3
Packaging: Box
Description: IGBT MODULE 1200V 80A 270W E3
Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V
Current - Collector Cutoff (Max): 2.7 mA
Power - Max: 270 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 80 A
IGBT Type: Trench
Supplier Device Package: E3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Three Phase Inverter with Brake
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: E3
Packaging: Box
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MUBW50-12T8 |
![]() |
Hersteller: IXYS
Discrete Semiconductor Modules 50 Amps 1200V
Discrete Semiconductor Modules 50 Amps 1200V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH


