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IXTP100N04T2

IXTP100N04T2 IXYS

pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389E1F1BA8D9820&compId=IXTA(P)100N04T2.pdf?ci_sign=6a88636d3dd1a68af7406b8bccbef80c68bda003 Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO220AB; 34ns
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 34ns
On-state resistance: 7mΩ
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 267 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
24+3.02 EUR
38+1.89 EUR
50+1.66 EUR
100+1.6 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IXTP100N04T2 IXYS

Description: MOSFET N-CH 40V 100A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2690 pF @ 25 V.

Weitere Produktangebote IXTP100N04T2 nach Preis ab 1.6 EUR bis 4.47 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IXTP100N04T2 IXTP100N04T2 Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389E1F1BA8D9820&compId=IXTA(P)100N04T2.pdf?ci_sign=6a88636d3dd1a68af7406b8bccbef80c68bda003 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO220AB; 34ns
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 34ns
On-state resistance: 7mΩ
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
auf Bestellung 267 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.02 EUR
38+1.89 EUR
50+1.66 EUR
100+1.6 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
IXTP100N04T2 IXTP100N04T2 Hersteller : IXYS Littelfuse_Discrete_MOSFETs_N_Channel_Trench_Gate_IXT_100N04T2_Datasheet.PDF MOSFETs 100 Amps 40V
auf Bestellung 82 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.47 EUR
10+2.34 EUR
100+2.24 EUR
500+1.94 EUR
1000+1.87 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXTP100N04T2 IXTP100N04T2 Hersteller : Littelfuse Inc. littelfuse-discrete-mosfets-ixt-100n04t2-datasheet?assetguid=02e31e74-04cd-4eee-96d9-15909abc1070 Description: MOSFET N-CH 40V 100A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2690 pF @ 25 V
auf Bestellung 269 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.47 EUR
50+2.4 EUR
100+2.27 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXTP100N04T2 IXTP100N04T2 Hersteller : Littelfuse mosfets_n-channel_trench_gate_ixt_100n04t2_datasheet.pdf.pdf Trans MOSFET N-CH 40V 100A Automotive 3-Pin(3+Tab) TO-220
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