IXTP120N04T2 IXYS
Hersteller: IXYS
Description: MOSFET N-CH 40V 120A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
| Anzahl | Preis |
|---|---|
| 300+ | 3.03 EUR |
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Technische Details IXTP120N04T2 IXYS
Description: MOSFET N-CH 40V 120A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 200W (Tc), Rds On (Max) @ Id, Vgs: 6.1mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote IXTP120N04T2
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXTP120N04T2 | Hersteller : IXYS |
MOSFET 120 Amps 40V |
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IXTP120N04T2 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO220AB; 35ns Mounting: THT Type of transistor: N-MOSFET Features of semiconductor devices: thrench gate power mosfet Case: TO220AB Kind of package: tube Polarisation: unipolar Drain current: 120A Drain-source voltage: 40V Gate charge: 58nC Reverse recovery time: 35ns On-state resistance: 6.1mΩ Power dissipation: 200W Kind of channel: enhancement |
Produkt ist nicht verfügbar |