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Technische Details IXTP102N15T IXYS
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB; 97ns, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 150V, Drain current: 102A, Power dissipation: 455W, Case: TO220AB, On-state resistance: 18mΩ, Mounting: THT, Gate charge: 87nC, Kind of package: tube, Kind of channel: enhancement, Features of semiconductor devices: thrench gate power mosfet, Reverse recovery time: 97ns.
Weitere Produktangebote IXTP102N15T
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
|
IXTP102N15T | IXYS |
MOSFETs 102 Amps 150V 18 Rds |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
IXTP102N15T | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB; 97ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 102A Power dissipation: 455W Case: TO220AB On-state resistance: 18mΩ Mounting: THT Gate charge: 87nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 97ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXTP102N15T |
![]() |
Hersteller: IXYS
MOSFETs 102 Amps 150V 18 Rds
MOSFETs 102 Amps 150V 18 Rds
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTP102N15T |
![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB; 97ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 102A
Power dissipation: 455W
Case: TO220AB
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 97ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB; 97ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 102A
Power dissipation: 455W
Case: TO220AB
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 97ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH




