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Technische Details IXTP102N15T IXYS
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB; 97ns, Kind of channel: enhancement, Mounting: THT, Case: TO220AB, Type of transistor: N-MOSFET, Kind of package: tube, Features of semiconductor devices: thrench gate power mosfet, Polarisation: unipolar, Gate charge: 87nC, Reverse recovery time: 97ns, On-state resistance: 18mΩ, Drain current: 102A, Drain-source voltage: 150V, Power dissipation: 455W.
Weitere Produktangebote IXTP102N15T
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
IXTP102N15T | IXYS |
 MOSFETs 102 Amps 150V 18 Rds |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IXTP102N15T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB; 97ns Kind of channel: enhancement Mounting: THT Case: TO220AB Type of transistor: N-MOSFET Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Polarisation: unipolar Gate charge: 87nC Reverse recovery time: 97ns On-state resistance: 18mΩ Drain current: 102A Drain-source voltage: 150V Power dissipation: 455W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXTP102N15T |
|
Hersteller: IXYS
MOSFETs 102 Amps 150V 18 Rds
MOSFETs 102 Amps 150V 18 Rds
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTP102N15T |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB; 97ns
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 87nC
Reverse recovery time: 97ns
On-state resistance: 18mΩ
Drain current: 102A
Drain-source voltage: 150V
Power dissipation: 455W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB; 97ns
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 87nC
Reverse recovery time: 97ns
On-state resistance: 18mΩ
Drain current: 102A
Drain-source voltage: 150V
Power dissipation: 455W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH