IXDN602SITR IXYS Integrated Circuits Division
Hersteller: IXYS Integrated Circuits Division
Description: IC GATE DRVR LOW-SIDE 8SOIC
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 2A, 2A
Logic Voltage - VIL, VIH: 0.8V, 3V
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 7.5ns, 6.5ns
Supplier Device Package: 8-SOIC-EP
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 35V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
| Anzahl | Preis |
|---|---|
| 6+ | 3.43 EUR |
| 10+ | 2.54 EUR |
| 25+ | 2.32 EUR |
| 100+ | 2.07 EUR |
| 250+ | 1.96 EUR |
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Technische Details IXDN602SITR IXYS Integrated Circuits Division
Description: IC GATE DRVR LOW-SIDE 8SOIC, DigiKey Programmable: Not Verified, Current - Peak Output (Source, Sink): 2A, 2A, Logic Voltage - VIL, VIH: 0.8V, 3V, Gate Type: IGBT, MOSFET (N-Channel, P-Channel), Number of Drivers: 2, Driven Configuration: Low-Side, Channel Type: Independent, Rise / Fall Time (Typ): 7.5ns, 6.5ns, Supplier Device Package: 8-SOIC-EP, Input Type: Non-Inverting, Voltage - Supply: 4.5V ~ 35V, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad, Packaging: Tape & Reel (TR).
Weitere Produktangebote IXDN602SITR nach Preis ab 2.15 EUR bis 3.84 EUR
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IXDN602SITR | IXYS Integrated Circuits |
Gate Drivers 2-A Dual Low-Side Ultrafast MOSFET |
auf Bestellung 3954 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXDN602SITR |
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Hersteller: IXYS Integrated Circuits
Gate Drivers 2-A Dual Low-Side Ultrafast MOSFET
Gate Drivers 2-A Dual Low-Side Ultrafast MOSFET
auf Bestellung 3954 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.84 EUR |
| 10+ | 2.87 EUR |
| 25+ | 2.6 EUR |
| 100+ | 2.32 EUR |
| 250+ | 2.22 EUR |
| 500+ | 2.16 EUR |
| 2000+ | 2.15 EUR |