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MCC132-14IO1B MCC132-14IO1B IXYS media?resourcetype=datasheets&amp;itemid=30f6ef06-b620-4c5c-82ae-b1c55e336c9f&amp;filename=littelfuse%2520power%2520semiconductors%2520mcc132-14io1b%2520datasheet.pdf Description: BIPOLAR MODULE - THYRISTOR Y4-M
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5130A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 130 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 300 A
Voltage - Off State: 1.4 kV
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DSS6-0025BS-TUB IXYS media?resourcetype=datasheets&itemid=6179aa5b-6e29-496a-b879-092bd963ea6c&filename=power_semiconductor_discrete_diode_dss6-0025bs_datasheet.pdf Description: DIODE SCHOTTKY 25V 6A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 639pF @ 5V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 mA @ 25 V
Produkt ist nicht verfügbar
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DSEP12-12AZ-TRL DSEP12-12AZ-TRL IXYS Littelfuse-Power-Semiconductors-DSEP12-12AZ-Datasheet?assetguid=012c4d94-42d0-46bd-b403-cba1fb09e8b0 Description: DIODE STANDARD 1200V 12A TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 600V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.62 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Produkt ist nicht verfügbar
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IXYP10N65B3D1 IXYP10N65B3D1 IXYS littelfuse-discrete-igbts-ixyp10n65b3d1-datasheet?assetguid=258ad532-f085-4203-aad2-fdf2106d2663 Description: IGBT PT 650V 32A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 29 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 10A
Supplier Device Package: TO-220
IGBT Type: PT
Td (on/off) @ 25°C: 17ns/125ns
Switching Energy: 300µJ (on), 200µJ (off)
Test Condition: 400V, 10A, 50Ohm, 15V
Gate Charge: 20 nC
Part Status: Active
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 62 A
Power - Max: 160 W
Produkt ist nicht verfügbar
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IXTQ3N150M IXYS media?resourcetype=datasheets&itemid=c6db860a-1248-4c1d-a54c-876cdbca4ff5&filename=littelfuse_discrete_mosfets_n-channel_standard_ixtq3n150m_datasheet.pdf Description: MOSFET N-CH 1500V 1.83A TO3PFP
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.83A (Tc)
Rds On (Max) @ Id, Vgs: 7.3Ohm @ 1.5A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PFP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V
Produkt ist nicht verfügbar
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DSS6-0045AS-TUB IXYS media?resourcetype=datasheets&itemid=48df9563-2f99-4ebc-b62f-20ffce405172&filename=power_semiconductor_discrete_diode_dss6-0045as_datasheet.pdf Description: DIODE SCHOTTKY 45V 6A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 497pF @ 5V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 6 A
Current - Reverse Leakage @ Vr: 250 µA @ 45 V
Produkt ist nicht verfügbar
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IXFA90N20X3TRL IXFA90N20X3TRL IXYS Description: MOSFET N-CH 200V 90A TO263
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CMA30E1600PZ-TUB CMA30E1600PZ-TUB IXYS Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCMA30E1600PZ.pdf Description: SCR 1.6KV 47A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 28 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 260A, 280A
Current - On State (It (AV)) (Max): 30 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.42 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 47 A
Voltage - Off State: 1.6 kV
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IXGA30N120B3-TRL IXGA30N120B3-TRL IXYS Description: IGBT PT 1200V 60A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/127ns
Switching Energy: 3.47mJ (on), 2.16mJ (off)
Test Condition: 960V, 30A, 5Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 300 W
Produkt ist nicht verfügbar
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IXTT96N20P-TRL IXYS Description: MOSFET N-CH 200V 96A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 48A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Produkt ist nicht verfügbar
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IXGA20N120B3-TRL IXGA20N120B3-TRL IXYS Description: IGBT PT 1200V 36A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31 ns
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 16A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/150ns
Switching Energy: 920µJ (on), 560µJ (off)
Test Condition: 600V, 16A, 15Ohm, 15V
Gate Charge: 51 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 180 W
Produkt ist nicht verfügbar
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DSB15IM30UC-TUB DSB15IM30UC-TUB IXYS dsb15im30uc-datasheet?assetguid=8aadd54f-0b28-4f5d-803e-b6fbf3b94b15 Description: DIODE SCHOTTKY 30V 15A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 292pF @ 24V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 15 A
Current - Reverse Leakage @ Vr: 5 mA @ 30 V
Produkt ist nicht verfügbar
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IXYN120N65B3D1 IXYN120N65B3D1 IXYS media?resourcetype=datasheets&itemid=85c42fd2-ffe0-4ff4-aae7-4fbbb43907da&filename=littelfuse_discrete_igbts_xpt_ixyn120n65b3d1_datasheet.pdf Description: IGBT PT 650V 250A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 28 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
Supplier Device Package: SOT-227B
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/168ns
Switching Energy: 1.34mJ (on), 1.5mJ (off)
Test Condition: 400V, 50A, 2Ohm, 15V
Gate Charge: 250 nC
Current - Collector (Ic) (Max): 250 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 770 A
Power - Max: 830 W
Produkt ist nicht verfügbar
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CLA30MT1200NPZ-TUB CLA30MT1200NPZ-TUB IXYS Description: POWER THYRISTOR DISCRETES-TRIAC
Produkt ist nicht verfügbar
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DSEI12-12AZ-TRL DSEI12-12AZ-TRL IXYS media?resourcetype=datasheets&itemid=3b99ded9-82dc-4699-ac8c-df4ed6bc2074&filename=littelfuse%2520power%2520semiconductors%2520dsei12-12az%2520datasheet.pdf Description: DIODE GEN PURP 1.2KV 11A TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 6pF @ 600V, 1MHz
Current - Average Rectified (Io): 11A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 12 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Produkt ist nicht verfügbar
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IXGA48N60C3-TRL IXGA48N60C3-TRL IXYS Description: IGBT PT 600V 75A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 26 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/60ns
Switching Energy: 410µJ (on), 230µJ (off)
Test Condition: 400V, 30A, 3Ohm, 15V
Gate Charge: 77 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 300 W
Produkt ist nicht verfügbar
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IXYP20N65C3 IXYS Description: DISC IGBT XPT-GENX3 TO-220AB/FP
Packaging: Tube
Operating Temperature: -55°C ~ 175°C (TJ)
Reverse Recovery Time (trr): 135 ns
Gate Charge: 30 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 200 W
Produkt ist nicht verfügbar
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IXYH120N65C3 IXYS littelfuse-discrete-igbts-ixyh120n65c3-datasheet?assetguid=3a25f202-33cd-4cf6-bacc-7b1739e41fec Description: IGBT PT 650V 260A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 29 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 100A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/127ns
Switching Energy: 1.25mJ (on), 500µJ (off)
Test Condition: 400V, 50A, 2Ohm, 15V
Gate Charge: 265 nC
Part Status: Active
Current - Collector (Ic) (Max): 260 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 620 A
Power - Max: 1360 W
Produkt ist nicht verfügbar
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IXTX660N04T4 IXTX660N04T4 IXYS Description: DISC MSFT NCHTRENCHGATE-GEN4 TO-
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Supplier Device Package: PLUS247™-3
Produkt ist nicht verfügbar
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CLA40MT1200NPZ-TUB CLA40MT1200NPZ-TUB IXYS media?resourcetype=datasheets&itemid=2578b596-bc17-45d7-a315-fcae3988392d&filename=littelfuse%2520power%2520semiconductors%2520cla40mt1200npz%2520datasheet.pdf Description: TRIAC 1.2KV 44A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 200A, 215A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 44 A
Voltage - Off State: 1.2 kV
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ZY200L460 IXYS littelfuse_power_semiconductors_product_catalog.pdf.pdf Description: ZY200L460
Packaging: Bulk
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
250+4.06 EUR
Mindestbestellmenge: 250
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DMA10IM1200UZ-TUB IXYS media?resourcetype=datasheets&itemid=6d9650e4-19ad-4143-8715-b01694239eeb&filename=Littelfuse-Power-Semiconductors-DMA10IM1200UZ-Datasheet Description: DIODE GEN PURP 1.2KV 10A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
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IXYA30N120A4HV IXYA30N120A4HV IXYS littelfuse-discrete-igbts-ixy-30n120a4-datasheet?assetguid=9fce9f90-2af9-4a75-bf7f-be975fe328f4 Description: IGBT PT 1200V 106A TO-263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
Supplier Device Package: TO-263HV
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/235ns
Switching Energy: 4mJ (on), 3.4mJ (off)
Test Condition: 960V, 25A, 5Ohm, 15V
Gate Charge: 57 nC
Part Status: Active
Current - Collector (Ic) (Max): 106 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 184 A
Power - Max: 500 W
Produkt ist nicht verfügbar
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IXYH30N120B4 IXYS littelfuse-discrete-igbts-ixyh30n120b4-datasheet?assetguid=13438fd2-8a6e-4f3e-8fa7-b91305e3767c Description: IGBT PT 1200V 100A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/245ns
Switching Energy: 4.4mJ (on), 2.6mJ (off)
Test Condition: 960V, 25A, 5Ohm, 15V
Gate Charge: 58 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 174 A
Power - Max: 500 W
Produkt ist nicht verfügbar
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IXGP28N60A3M IXGP28N60A3M IXYS littelfuse_discrete_igbts_pt_ixgp28n60a3m_datasheet?assetguid=5aadf2ec-3e47-42d9-8eb1-2dc2325990fa Description: IGBT PT 600V 38A TO220 ISOLATED
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 26 ns
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 24A
Supplier Device Package: TO-220 Isolated Tab
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/300ns
Test Condition: 480V, 24A, 10Ohm, 15V
Gate Charge: 66 nC
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 64 W
Produkt ist nicht verfügbar
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IXYN300N65A3 IXYN300N65A3 IXYS Description: DISC IGBT XPT-GENX3 SOT-227B(MIN
Produkt ist nicht verfügbar
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CME30E1600PZ-TRL CME30E1600PZ-TRL IXYS Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCME30E1600PZ.pdf Description: SCR 1.6KV 35A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 90 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 260A, 280A
Current - On State (It (AV)) (Max): 30 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.92 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 35 A
Voltage - Off State: 1.6 kV
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IXYH120N65B3 IXYS media?resourcetype=datasheets&itemid=b04b9238-26f1-467e-981d-839cb4ffab3d&filename=littelfuse_discrete_igbts_xpt_ixyh120n65b3_datasheet.pdf Description: DISC IGBT XPT-GENX3 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 28 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/168ns
Switching Energy: 1.34mJ (on), 1.5mJ (off)
Test Condition: 400V, 50A, 2Ohm, 15V
Gate Charge: 250 nC
Part Status: Active
Current - Collector (Ic) (Max): 340 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 760 A
Power - Max: 1360 W
Produkt ist nicht verfügbar
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DSB15IM30UC-TRL DSB15IM30UC-TRL IXYS dsb15im30uc-datasheet?assetguid=8aadd54f-0b28-4f5d-803e-b6fbf3b94b15 Description: DIODE SCHOTTKY 30V 15A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 292pF @ 24V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 15 A
Current - Reverse Leakage @ Vr: 5 mA @ 30 V
Produkt ist nicht verfügbar
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IXFA110N15T2 IXFA110N15T2 IXYS Description: MOSFET N-CH 150V 110A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 55A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V
Produkt ist nicht verfügbar
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IXYA20N120B4HV IXYA20N120B4HV IXYS Description: IGBT PT 1200V 76A TO-263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-263HV
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/200ns
Switching Energy: 3.9mJ (on), 1.6mJ (off)
Test Condition: 960mV, 20A, 10Ohm, 15V
Gate Charge: 44 nC
Part Status: Active
Current - Collector (Ic) (Max): 76 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 130 A
Power - Max: 375 W
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IXYA20N120C4HV IXYA20N120C4HV IXYS Description: IGBT PT 1200V 68A TO-263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-263HV
IGBT Type: PT
Td (on/off) @ 25°C: 14ns/160ns
Switching Energy: 4.4mJ (on), 1mJ (off)
Test Condition: 960mV, 20A, 10Ohm, 15V
Gate Charge: 44 nC
Part Status: Active
Current - Collector (Ic) (Max): 68 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 375 W
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DSEP15-06AS-TRL DSEP15-06AS-TRL IXYS media?resourcetype=datasheets&itemid=1dbb9792-2f0a-4993-9628-22a96109cc5e&filename=littelfuse%2520power%2520semiconductors%2520dsep15-06as%2520datasheet.pdf Description: DIODE GEN PURP 600V 15A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 400V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.04 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Produkt ist nicht verfügbar
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DSEP15-06AS-TUB DSEP15-06AS-TUB IXYS media?resourcetype=datasheets&itemid=1dbb9792-2f0a-4993-9628-22a96109cc5e&filename=littelfuse%2520power%2520semiconductors%2520dsep15-06as%2520datasheet.pdf Description: DIODE GEN PURP 600V 15A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 400V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.04 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Produkt ist nicht verfügbar
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N2600MC160 N2600MC160 IXYS Description: SCR 1.6KV 5200A W70
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Clamp On
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 33000A @ 50Hz
Current - On State (It (AV)) (Max): 2600 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2 V
Current - Off State (Max): 100 mA
Supplier Device Package: W70
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 5200 A
Voltage - Off State: 1.6 kV
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N2600MC180 IXYS Description: SCR 1.8KV 5200A W70
Produkt ist nicht verfügbar
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DSEI2X61-10B DSEI2X61-10B IXYS Littelfuse-Power-Semiconductors-DSEI2x61-10B-Datasheet?assetguid=52b7284d-8218-4e60-939b-cbd121290d5e Description: DIODE MOD GP 1000V 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 60 A
Current - Reverse Leakage @ Vr: 3 mA @ 1000 V
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DSEI2X61-06C DSEI2X61-06C IXYS DSEI2x61-04C_DSEI2x61-06C.pdf Description: DIODE MODULE GP 600V 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
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DPG60C300PC-TUB DPG60C300PC-TUB IXYS Description: DIODE ARRAY GP 300V 30A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
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IXFK98N50P3 IXFK98N50P3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_98n50p3_datasheet.pdf.pdf Description: MOSFET N-CH 500V 98A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 500mA, 10V
Power Dissipation (Max): 1300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
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IXTP110N12T2 IXTP110N12T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_110n12t2_datasheet.pdf.pdf Description: MOSFET N-CH 120V 110A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 55A, 10V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6570 pF @ 25 V
Produkt ist nicht verfügbar
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IXGA48N60A3-TRL IXGA48N60A3-TRL IXYS 238_IXGA48N60A3.pdf Description: IGBT PT 600V 120A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 32A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/334ns
Switching Energy: 950µJ (on), 2.9mJ (off)
Test Condition: 480V, 32A, 5Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 300 W
Produkt ist nicht verfügbar
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IXGA48N60B3-TRL IXGA48N60B3-TRL IXYS Description: IGBT PT 600V 48A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/130ns
Switching Energy: 840µJ (on), 660µJ (off)
Test Condition: 480V, 30A, 5Ohm, 15V
Gate Charge: 115 nC
Part Status: Active
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 300 W
Produkt ist nicht verfügbar
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IXFN48N50 IXFN48N50 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_4_n50_datasheet.pdf.pdf Description: MOSFET N-CH 500V 48A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Produkt ist nicht verfügbar
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DLA100B800LB-TRR IXYS media?resourcetype=datasheets&itemid=065b1604-0bcb-4ad1-9912-f1c3d8bb4a36&filename=littelfuse%2520power%2520semiconductors%2520dla100b800lb%2520datasheet.pdf Description: BIPOLAR MODULE-BRIDGE RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerSMD
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: 9-SMPD-B
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 124 A
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
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DLA100B800LB-TUB IXYS Description: BIPOLAR MODULE-BRIDGE RECTIFIER
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DLA100B1200LB-TUB IXYS DLA100B1200LB.pdf Description: BRIDGE RECT 1P 1.2KV 132A SMPD.B
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IXFN200N07 IXFN200N07 IXYS 97533.pdf description Description: MOSFET N-CH 70V 200A SOT-227B
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DSEI60-12A DSEI60-12A IXYS Littelfuse-Power-Semiconductors-DSEI60-12A-Datasheet?assetguid=bcca0668-1e7f-4db6-9ef6-0ebe59060c4d Description: DIODE STANDARD 1200V 52A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 52A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.55 V @ 60 A
Current - Reverse Leakage @ Vr: 2.2 mA @ 1200 V
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DSEI25-06A DSEI25-06A IXYS media?resourcetype=datasheets&itemid=7e3c235c-8420-447c-b3af-34da18832d08&filename=littelfuse%2520power%2520semiconductors%2520dsei25-06a%2520datasheet.pdf Description: DIODE GEN PURP 600V 25A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 400V, 1MHz
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 25 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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DSEI2X31-12B DSEI2X31-12B IXYS pdf&Policy=eyJTdGF0ZW1lbnQiOlt7I description Description: DIODE MOD GP 1200V 28A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.54 V @ 30 A
Current - Reverse Leakage @ Vr: 750 µA @ 1200 V
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DSEI25-06AS-TRL DSEI25-06AS-TRL IXYS media?resourcetype=datasheets&itemid=53895372-7e40-416a-8cca-1187dd046ab2&filename=littelfuse%2520power%2520semiconductors%2520dsei25-06as%2520datasheet.pdf Description: DIODE GEN PURP 600V 25A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 400V, 1MHz
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 25 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Produkt ist nicht verfügbar
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DSEI25-06AS-TUB DSEI25-06AS-TUB IXYS media?resourcetype=datasheets&itemid=53895372-7e40-416a-8cca-1187dd046ab2&filename=littelfuse%2520power%2520semiconductors%2520dsei25-06as%2520datasheet.pdf Description: DIODE GEN PURP 600V 25A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 400V, 1MHz
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 25 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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IXTQ69N30PM IXYS a Description: MOSFET N-CH 300V 25A TO3PFP
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MDNA210UB2200PTED IXYS Description: BIPOLARMODULE-RECTIFIER+BRAKE E2
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MDNA280UB2200PTED IXYS Description: BIPOLARMODULE-RECTIFIER+BRAKE E2
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IXTA3N120HV-TRL IXTA3N120HV-TRL IXYS Description: MOSFET N-CH 1200V 3A TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
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IXTA3N120-TRR IXTA3N120-TRR IXYS Description: MOSFET N-CH 1200V 3A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Produkt ist nicht verfügbar
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IXYY8N90C3-TRL IXYY8N90C3-TRL IXYS Description: IGBT PT 900V 20A TO-252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 20 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 8A
Supplier Device Package: TO-252AA
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/40ns
Switching Energy: 460µJ (on), 180µJ (off)
Test Condition: 450V, 8A, 30Ohm, 15V
Gate Charge: 13.3 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 125 W
Produkt ist nicht verfügbar
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MCD162-16io1B MCD162-16io1B IXYS Description: SCR MODULE 1.6KV 300A Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6480A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 181 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 300 A
Voltage - Off State: 1.6 kV
auf Bestellung 540 Stücke:
Lieferzeit 10-14 Tag (e)
6+82.10 EUR
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MCC132-14IO1B media?resourcetype=datasheets&amp;itemid=30f6ef06-b620-4c5c-82ae-b1c55e336c9f&amp;filename=littelfuse%2520power%2520semiconductors%2520mcc132-14io1b%2520datasheet.pdf
MCC132-14IO1B
Hersteller: IXYS
Description: BIPOLAR MODULE - THYRISTOR Y4-M
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5130A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 130 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 300 A
Voltage - Off State: 1.4 kV
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+87.64 EUR
Mindestbestellmenge: 6
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DSS6-0025BS-TUB media?resourcetype=datasheets&itemid=6179aa5b-6e29-496a-b879-092bd963ea6c&filename=power_semiconductor_discrete_diode_dss6-0025bs_datasheet.pdf
Hersteller: IXYS
Description: DIODE SCHOTTKY 25V 6A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 639pF @ 5V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 mA @ 25 V
Produkt ist nicht verfügbar
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DSEP12-12AZ-TRL Littelfuse-Power-Semiconductors-DSEP12-12AZ-Datasheet?assetguid=012c4d94-42d0-46bd-b403-cba1fb09e8b0
DSEP12-12AZ-TRL
Hersteller: IXYS
Description: DIODE STANDARD 1200V 12A TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 600V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.62 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Produkt ist nicht verfügbar
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IXYP10N65B3D1 littelfuse-discrete-igbts-ixyp10n65b3d1-datasheet?assetguid=258ad532-f085-4203-aad2-fdf2106d2663
IXYP10N65B3D1
Hersteller: IXYS
Description: IGBT PT 650V 32A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 29 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 10A
Supplier Device Package: TO-220
IGBT Type: PT
Td (on/off) @ 25°C: 17ns/125ns
Switching Energy: 300µJ (on), 200µJ (off)
Test Condition: 400V, 10A, 50Ohm, 15V
Gate Charge: 20 nC
Part Status: Active
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 62 A
Power - Max: 160 W
Produkt ist nicht verfügbar
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IXTQ3N150M media?resourcetype=datasheets&itemid=c6db860a-1248-4c1d-a54c-876cdbca4ff5&filename=littelfuse_discrete_mosfets_n-channel_standard_ixtq3n150m_datasheet.pdf
Hersteller: IXYS
Description: MOSFET N-CH 1500V 1.83A TO3PFP
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.83A (Tc)
Rds On (Max) @ Id, Vgs: 7.3Ohm @ 1.5A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PFP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V
Produkt ist nicht verfügbar
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DSS6-0045AS-TUB media?resourcetype=datasheets&itemid=48df9563-2f99-4ebc-b62f-20ffce405172&filename=power_semiconductor_discrete_diode_dss6-0045as_datasheet.pdf
Hersteller: IXYS
Description: DIODE SCHOTTKY 45V 6A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 497pF @ 5V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 6 A
Current - Reverse Leakage @ Vr: 250 µA @ 45 V
Produkt ist nicht verfügbar
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IXFA90N20X3TRL
IXFA90N20X3TRL
Hersteller: IXYS
Description: MOSFET N-CH 200V 90A TO263
Produkt ist nicht verfügbar
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CMA30E1600PZ-TUB Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCMA30E1600PZ.pdf
CMA30E1600PZ-TUB
Hersteller: IXYS
Description: SCR 1.6KV 47A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 28 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 260A, 280A
Current - On State (It (AV)) (Max): 30 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.42 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 47 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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IXGA30N120B3-TRL
IXGA30N120B3-TRL
Hersteller: IXYS
Description: IGBT PT 1200V 60A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/127ns
Switching Energy: 3.47mJ (on), 2.16mJ (off)
Test Condition: 960V, 30A, 5Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 300 W
Produkt ist nicht verfügbar
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IXTT96N20P-TRL
Hersteller: IXYS
Description: MOSFET N-CH 200V 96A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 48A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Produkt ist nicht verfügbar
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IXGA20N120B3-TRL
IXGA20N120B3-TRL
Hersteller: IXYS
Description: IGBT PT 1200V 36A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31 ns
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 16A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/150ns
Switching Energy: 920µJ (on), 560µJ (off)
Test Condition: 600V, 16A, 15Ohm, 15V
Gate Charge: 51 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 180 W
Produkt ist nicht verfügbar
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DSB15IM30UC-TUB dsb15im30uc-datasheet?assetguid=8aadd54f-0b28-4f5d-803e-b6fbf3b94b15
DSB15IM30UC-TUB
Hersteller: IXYS
Description: DIODE SCHOTTKY 30V 15A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 292pF @ 24V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 15 A
Current - Reverse Leakage @ Vr: 5 mA @ 30 V
Produkt ist nicht verfügbar
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IXYN120N65B3D1 media?resourcetype=datasheets&itemid=85c42fd2-ffe0-4ff4-aae7-4fbbb43907da&filename=littelfuse_discrete_igbts_xpt_ixyn120n65b3d1_datasheet.pdf
IXYN120N65B3D1
Hersteller: IXYS
Description: IGBT PT 650V 250A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 28 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
Supplier Device Package: SOT-227B
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/168ns
Switching Energy: 1.34mJ (on), 1.5mJ (off)
Test Condition: 400V, 50A, 2Ohm, 15V
Gate Charge: 250 nC
Current - Collector (Ic) (Max): 250 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 770 A
Power - Max: 830 W
Produkt ist nicht verfügbar
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CLA30MT1200NPZ-TUB
CLA30MT1200NPZ-TUB
Hersteller: IXYS
Description: POWER THYRISTOR DISCRETES-TRIAC
Produkt ist nicht verfügbar
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DSEI12-12AZ-TRL media?resourcetype=datasheets&itemid=3b99ded9-82dc-4699-ac8c-df4ed6bc2074&filename=littelfuse%2520power%2520semiconductors%2520dsei12-12az%2520datasheet.pdf
DSEI12-12AZ-TRL
Hersteller: IXYS
Description: DIODE GEN PURP 1.2KV 11A TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 6pF @ 600V, 1MHz
Current - Average Rectified (Io): 11A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 12 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Produkt ist nicht verfügbar
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IXGA48N60C3-TRL
IXGA48N60C3-TRL
Hersteller: IXYS
Description: IGBT PT 600V 75A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 26 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/60ns
Switching Energy: 410µJ (on), 230µJ (off)
Test Condition: 400V, 30A, 3Ohm, 15V
Gate Charge: 77 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 300 W
Produkt ist nicht verfügbar
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IXYP20N65C3
Hersteller: IXYS
Description: DISC IGBT XPT-GENX3 TO-220AB/FP
Packaging: Tube
Operating Temperature: -55°C ~ 175°C (TJ)
Reverse Recovery Time (trr): 135 ns
Gate Charge: 30 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 200 W
Produkt ist nicht verfügbar
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IXYH120N65C3 littelfuse-discrete-igbts-ixyh120n65c3-datasheet?assetguid=3a25f202-33cd-4cf6-bacc-7b1739e41fec
Hersteller: IXYS
Description: IGBT PT 650V 260A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 29 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 100A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/127ns
Switching Energy: 1.25mJ (on), 500µJ (off)
Test Condition: 400V, 50A, 2Ohm, 15V
Gate Charge: 265 nC
Part Status: Active
Current - Collector (Ic) (Max): 260 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 620 A
Power - Max: 1360 W
Produkt ist nicht verfügbar
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IXTX660N04T4
IXTX660N04T4
Hersteller: IXYS
Description: DISC MSFT NCHTRENCHGATE-GEN4 TO-
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Supplier Device Package: PLUS247™-3
Produkt ist nicht verfügbar
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CLA40MT1200NPZ-TUB media?resourcetype=datasheets&itemid=2578b596-bc17-45d7-a315-fcae3988392d&filename=littelfuse%2520power%2520semiconductors%2520cla40mt1200npz%2520datasheet.pdf
CLA40MT1200NPZ-TUB
Hersteller: IXYS
Description: TRIAC 1.2KV 44A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 200A, 215A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 44 A
Voltage - Off State: 1.2 kV
Produkt ist nicht verfügbar
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ZY200L460 littelfuse_power_semiconductors_product_catalog.pdf.pdf
Hersteller: IXYS
Description: ZY200L460
Packaging: Bulk
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
250+4.06 EUR
Mindestbestellmenge: 250
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DMA10IM1200UZ-TUB media?resourcetype=datasheets&itemid=6d9650e4-19ad-4143-8715-b01694239eeb&filename=Littelfuse-Power-Semiconductors-DMA10IM1200UZ-Datasheet
Hersteller: IXYS
Description: DIODE GEN PURP 1.2KV 10A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
auf Bestellung 1050 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
70+2.08 EUR
Mindestbestellmenge: 70
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IXYA30N120A4HV littelfuse-discrete-igbts-ixy-30n120a4-datasheet?assetguid=9fce9f90-2af9-4a75-bf7f-be975fe328f4
IXYA30N120A4HV
Hersteller: IXYS
Description: IGBT PT 1200V 106A TO-263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
Supplier Device Package: TO-263HV
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/235ns
Switching Energy: 4mJ (on), 3.4mJ (off)
Test Condition: 960V, 25A, 5Ohm, 15V
Gate Charge: 57 nC
Part Status: Active
Current - Collector (Ic) (Max): 106 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 184 A
Power - Max: 500 W
Produkt ist nicht verfügbar
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IXYH30N120B4 littelfuse-discrete-igbts-ixyh30n120b4-datasheet?assetguid=13438fd2-8a6e-4f3e-8fa7-b91305e3767c
Hersteller: IXYS
Description: IGBT PT 1200V 100A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/245ns
Switching Energy: 4.4mJ (on), 2.6mJ (off)
Test Condition: 960V, 25A, 5Ohm, 15V
Gate Charge: 58 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 174 A
Power - Max: 500 W
Produkt ist nicht verfügbar
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IXGP28N60A3M littelfuse_discrete_igbts_pt_ixgp28n60a3m_datasheet?assetguid=5aadf2ec-3e47-42d9-8eb1-2dc2325990fa
IXGP28N60A3M
Hersteller: IXYS
Description: IGBT PT 600V 38A TO220 ISOLATED
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 26 ns
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 24A
Supplier Device Package: TO-220 Isolated Tab
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/300ns
Test Condition: 480V, 24A, 10Ohm, 15V
Gate Charge: 66 nC
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 64 W
Produkt ist nicht verfügbar
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IXYN300N65A3
IXYN300N65A3
Hersteller: IXYS
Description: DISC IGBT XPT-GENX3 SOT-227B(MIN
Produkt ist nicht verfügbar
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CME30E1600PZ-TRL Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCME30E1600PZ.pdf
CME30E1600PZ-TRL
Hersteller: IXYS
Description: SCR 1.6KV 35A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 90 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 260A, 280A
Current - On State (It (AV)) (Max): 30 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.92 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 35 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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IXYH120N65B3 media?resourcetype=datasheets&itemid=b04b9238-26f1-467e-981d-839cb4ffab3d&filename=littelfuse_discrete_igbts_xpt_ixyh120n65b3_datasheet.pdf
Hersteller: IXYS
Description: DISC IGBT XPT-GENX3 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 28 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/168ns
Switching Energy: 1.34mJ (on), 1.5mJ (off)
Test Condition: 400V, 50A, 2Ohm, 15V
Gate Charge: 250 nC
Part Status: Active
Current - Collector (Ic) (Max): 340 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 760 A
Power - Max: 1360 W
Produkt ist nicht verfügbar
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DSB15IM30UC-TRL dsb15im30uc-datasheet?assetguid=8aadd54f-0b28-4f5d-803e-b6fbf3b94b15
DSB15IM30UC-TRL
Hersteller: IXYS
Description: DIODE SCHOTTKY 30V 15A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 292pF @ 24V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 15 A
Current - Reverse Leakage @ Vr: 5 mA @ 30 V
Produkt ist nicht verfügbar
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IXFA110N15T2
IXFA110N15T2
Hersteller: IXYS
Description: MOSFET N-CH 150V 110A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 55A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V
Produkt ist nicht verfügbar
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IXYA20N120B4HV
IXYA20N120B4HV
Hersteller: IXYS
Description: IGBT PT 1200V 76A TO-263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-263HV
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/200ns
Switching Energy: 3.9mJ (on), 1.6mJ (off)
Test Condition: 960mV, 20A, 10Ohm, 15V
Gate Charge: 44 nC
Part Status: Active
Current - Collector (Ic) (Max): 76 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 130 A
Power - Max: 375 W
auf Bestellung 345 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+21.37 EUR
50+12.19 EUR
100+11.31 EUR
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IXYA20N120C4HV
IXYA20N120C4HV
Hersteller: IXYS
Description: IGBT PT 1200V 68A TO-263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-263HV
IGBT Type: PT
Td (on/off) @ 25°C: 14ns/160ns
Switching Energy: 4.4mJ (on), 1mJ (off)
Test Condition: 960mV, 20A, 10Ohm, 15V
Gate Charge: 44 nC
Part Status: Active
Current - Collector (Ic) (Max): 68 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 375 W
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.92 EUR
50+8.21 EUR
100+7.56 EUR
Mindestbestellmenge: 2
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DSEP15-06AS-TRL media?resourcetype=datasheets&itemid=1dbb9792-2f0a-4993-9628-22a96109cc5e&filename=littelfuse%2520power%2520semiconductors%2520dsep15-06as%2520datasheet.pdf
DSEP15-06AS-TRL
Hersteller: IXYS
Description: DIODE GEN PURP 600V 15A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 400V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.04 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Produkt ist nicht verfügbar
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DSEP15-06AS-TUB media?resourcetype=datasheets&itemid=1dbb9792-2f0a-4993-9628-22a96109cc5e&filename=littelfuse%2520power%2520semiconductors%2520dsep15-06as%2520datasheet.pdf
DSEP15-06AS-TUB
Hersteller: IXYS
Description: DIODE GEN PURP 600V 15A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 400V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.04 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Produkt ist nicht verfügbar
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N2600MC160
N2600MC160
Hersteller: IXYS
Description: SCR 1.6KV 5200A W70
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Clamp On
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 33000A @ 50Hz
Current - On State (It (AV)) (Max): 2600 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2 V
Current - Off State (Max): 100 mA
Supplier Device Package: W70
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 5200 A
Voltage - Off State: 1.6 kV
auf Bestellung 4 Stücke:
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Anzahl Preis
1+377.08 EUR
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N2600MC180
Hersteller: IXYS
Description: SCR 1.8KV 5200A W70
Produkt ist nicht verfügbar
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DSEI2X61-10B Littelfuse-Power-Semiconductors-DSEI2x61-10B-Datasheet?assetguid=52b7284d-8218-4e60-939b-cbd121290d5e
DSEI2X61-10B
Hersteller: IXYS
Description: DIODE MOD GP 1000V 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 60 A
Current - Reverse Leakage @ Vr: 3 mA @ 1000 V
auf Bestellung 227 Stücke:
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Anzahl Preis
1+52.40 EUR
10+38.71 EUR
100+34.02 EUR
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DSEI2X61-06C DSEI2x61-04C_DSEI2x61-06C.pdf
DSEI2X61-06C
Hersteller: IXYS
Description: DIODE MODULE GP 600V 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
auf Bestellung 762 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+45.23 EUR
10+33.13 EUR
100+28.29 EUR
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DPG60C300PC-TUB
DPG60C300PC-TUB
Hersteller: IXYS
Description: DIODE ARRAY GP 300V 30A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
auf Bestellung 78 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.33 EUR
50+6.07 EUR
Mindestbestellmenge: 2
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IXFK98N50P3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_98n50p3_datasheet.pdf.pdf
IXFK98N50P3
Hersteller: IXYS
Description: MOSFET N-CH 500V 98A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 500mA, 10V
Power Dissipation (Max): 1300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
Produkt ist nicht verfügbar
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IXTP110N12T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_110n12t2_datasheet.pdf.pdf
IXTP110N12T2
Hersteller: IXYS
Description: MOSFET N-CH 120V 110A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 55A, 10V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6570 pF @ 25 V
Produkt ist nicht verfügbar
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IXGA48N60A3-TRL 238_IXGA48N60A3.pdf
IXGA48N60A3-TRL
Hersteller: IXYS
Description: IGBT PT 600V 120A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 32A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/334ns
Switching Energy: 950µJ (on), 2.9mJ (off)
Test Condition: 480V, 32A, 5Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 300 W
Produkt ist nicht verfügbar
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IXGA48N60B3-TRL
IXGA48N60B3-TRL
Hersteller: IXYS
Description: IGBT PT 600V 48A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/130ns
Switching Energy: 840µJ (on), 660µJ (off)
Test Condition: 480V, 30A, 5Ohm, 15V
Gate Charge: 115 nC
Part Status: Active
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 300 W
Produkt ist nicht verfügbar
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IXFN48N50 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_4_n50_datasheet.pdf.pdf
IXFN48N50
Hersteller: IXYS
Description: MOSFET N-CH 500V 48A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Produkt ist nicht verfügbar
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DLA100B800LB-TRR media?resourcetype=datasheets&itemid=065b1604-0bcb-4ad1-9912-f1c3d8bb4a36&filename=littelfuse%2520power%2520semiconductors%2520dla100b800lb%2520datasheet.pdf
Hersteller: IXYS
Description: BIPOLAR MODULE-BRIDGE RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerSMD
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: 9-SMPD-B
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 124 A
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
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DLA100B800LB-TUB
Hersteller: IXYS
Description: BIPOLAR MODULE-BRIDGE RECTIFIER
Produkt ist nicht verfügbar
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DLA100B1200LB-TUB DLA100B1200LB.pdf
Hersteller: IXYS
Description: BRIDGE RECT 1P 1.2KV 132A SMPD.B
Produkt ist nicht verfügbar
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IXFN200N07 description 97533.pdf
IXFN200N07
Hersteller: IXYS
Description: MOSFET N-CH 70V 200A SOT-227B
auf Bestellung 390 Stücke:
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DSEI60-12A Littelfuse-Power-Semiconductors-DSEI60-12A-Datasheet?assetguid=bcca0668-1e7f-4db6-9ef6-0ebe59060c4d
DSEI60-12A
Hersteller: IXYS
Description: DIODE STANDARD 1200V 52A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 52A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.55 V @ 60 A
Current - Reverse Leakage @ Vr: 2.2 mA @ 1200 V
auf Bestellung 819 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.72 EUR
30+7.47 EUR
120+7.16 EUR
510+6.85 EUR
Mindestbestellmenge: 2
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DSEI25-06A media?resourcetype=datasheets&itemid=7e3c235c-8420-447c-b3af-34da18832d08&filename=littelfuse%2520power%2520semiconductors%2520dsei25-06a%2520datasheet.pdf
DSEI25-06A
Hersteller: IXYS
Description: DIODE GEN PURP 600V 25A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 400V, 1MHz
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 25 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
auf Bestellung 2972 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.01 EUR
50+3.22 EUR
100+2.65 EUR
500+2.24 EUR
1000+1.90 EUR
2000+1.81 EUR
Mindestbestellmenge: 5
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DSEI2X31-12B description pdf&Policy=eyJTdGF0ZW1lbnQiOlt7I
DSEI2X31-12B
Hersteller: IXYS
Description: DIODE MOD GP 1200V 28A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.54 V @ 30 A
Current - Reverse Leakage @ Vr: 750 µA @ 1200 V
auf Bestellung 891 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+40.78 EUR
10+29.60 EUR
100+24.52 EUR
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DSEI25-06AS-TRL media?resourcetype=datasheets&itemid=53895372-7e40-416a-8cca-1187dd046ab2&filename=littelfuse%2520power%2520semiconductors%2520dsei25-06as%2520datasheet.pdf
DSEI25-06AS-TRL
Hersteller: IXYS
Description: DIODE GEN PURP 600V 25A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 400V, 1MHz
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 25 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Produkt ist nicht verfügbar
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DSEI25-06AS-TUB media?resourcetype=datasheets&itemid=53895372-7e40-416a-8cca-1187dd046ab2&filename=littelfuse%2520power%2520semiconductors%2520dsei25-06as%2520datasheet.pdf
DSEI25-06AS-TUB
Hersteller: IXYS
Description: DIODE GEN PURP 600V 25A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 400V, 1MHz
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 25 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Produkt ist nicht verfügbar
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IXTQ69N30PM a
Hersteller: IXYS
Description: MOSFET N-CH 300V 25A TO3PFP
Produkt ist nicht verfügbar
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MDNA210UB2200PTED
Hersteller: IXYS
Description: BIPOLARMODULE-RECTIFIER+BRAKE E2
Produkt ist nicht verfügbar
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MDNA280UB2200PTED
Hersteller: IXYS
Description: BIPOLARMODULE-RECTIFIER+BRAKE E2
Produkt ist nicht verfügbar
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IXTA3N120HV-TRL
IXTA3N120HV-TRL
Hersteller: IXYS
Description: MOSFET N-CH 1200V 3A TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Produkt ist nicht verfügbar
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IXTA3N120-TRR
IXTA3N120-TRR
Hersteller: IXYS
Description: MOSFET N-CH 1200V 3A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Produkt ist nicht verfügbar
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IXYY8N90C3-TRL
IXYY8N90C3-TRL
Hersteller: IXYS
Description: IGBT PT 900V 20A TO-252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 20 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 8A
Supplier Device Package: TO-252AA
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/40ns
Switching Energy: 460µJ (on), 180µJ (off)
Test Condition: 450V, 8A, 30Ohm, 15V
Gate Charge: 13.3 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 125 W
Produkt ist nicht verfügbar
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MCD162-16io1B
MCD162-16io1B
Hersteller: IXYS
Description: SCR MODULE 1.6KV 300A Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6480A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 181 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 300 A
Voltage - Off State: 1.6 kV
auf Bestellung 540 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+82.10 EUR
Mindestbestellmenge: 6
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